H03F 1/00
|
AMPLIFIERS - Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements |
H03F 1/02
|
Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation |
H03F 1/04
|
Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers |
H03F 1/06
|
Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifiers acting also as modulators |
H03F 1/07
|
Doherty-type amplifiers |
H03F 1/08
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements |
H03F 1/10
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Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of amplifying elements with multiple electrode connections |
H03F 1/12
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of attenuating means |
H03F 1/13
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of attenuating means in discharge-tube amplifiers |
H03F 1/14
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means |
H03F 1/16
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means in discharge-tube amplifiers |
H03F 1/18
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling |
H03F 1/20
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling in discharge-tube amplifiers |
H03F 1/22
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively |
H03F 1/24
|
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively in discharge-tube amplifiers |
H03F 1/26
|
Modifications of amplifiers to reduce influence of noise generated by amplifying elements |
H03F 1/28
|
Modifications of amplifiers to reduce influence of noise generated by amplifying elements in discharge-tube amplifiers |
H03F 1/30
|
Modifications of amplifiers to reduce influence of variations of temperature or supply voltage |
H03F 1/32
|
Modifications of amplifiers to reduce non-linear distortion |
H03F 1/33
|
Modifications of amplifiers to reduce non-linear distortion in discharge-tube amplifiers |
H03F 1/34
|
Negative-feedback-circuit arrangements with or without positive feedback |
H03F 1/36
|
Negative-feedback-circuit arrangements with or without positive feedback in discharge-tube amplifiers |
H03F 1/38
|
Positive-feedback circuit arrangements without negative feedback |
H03F 1/40
|
Positive-feedback circuit arrangements without negative feedback in discharge-tube amplifiers |
H03F 1/42
|
Modifications of amplifiers to extend the bandwidth |
H03F 1/44
|
Modifications of amplifiers to extend the bandwidth of tuned amplifiers |
H03F 1/46
|
Modifications of amplifiers to extend the bandwidth of tuned amplifiers with tubes only |
H03F 1/48
|
Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers |
H03F 1/50
|
Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with tubes only |
H03F 1/52
|
Circuit arrangements for protecting such amplifiers |
H03F 1/54
|
Circuit arrangements for protecting such amplifiers with tubes only |
H03F 1/56
|
Modifications of input or output impedances, not otherwise provided for |
H03F 3/00
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements |
H03F 3/02
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with tubes only |
H03F 3/04
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only |
H03F 3/06
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only using hole storage effect |
H03F 3/08
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light |
H03F 3/10
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes |
H03F 3/12
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes |
H03F 3/14
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions |
H03F 3/16
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices |
H03F 3/18
|
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices of complementary types |
H03F 3/19
|
High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only |
H03F 3/20
|
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers |
H03F 3/21
|
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only |
H03F 3/22
|
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with tubes only |
H03F 3/24
|
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages |
H03F 3/26
|
Push-pull amplifiers; Phase-splitters therefor |
H03F 3/28
|
Push-pull amplifiers; Phase-splitters therefor with tubes only |
H03F 3/30
|
Single-ended push-pull amplifiers; Phase-splitters therefor |
H03F 3/32
|
Single-ended push-pull amplifiers; Phase-splitters therefor with tubes only |
H03F 3/34
|
Dc amplifiers in which all stages are dc-coupled |
H03F 3/36
|
Dc amplifiers in which all stages are dc-coupled with tubes only |
H03F 3/38
|
Dc amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers |
H03F 3/40
|
Dc amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with tubes only |
H03F 3/42
|
Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers |
H03F 3/44
|
Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers with tubes only |
H03F 3/45
|
Differential amplifiers |
H03F 3/46
|
Reflex amplifiers |
H03F 3/48
|
Reflex amplifiers with tubes only |
H03F 3/50
|
Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower |
H03F 3/52
|
Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with tubes only |
H03F 3/54
|
Amplifiers using transit-time effect in tubes or semiconductor devices |
H03F 3/55
|
Amplifiers using transit-time effect in tubes or semiconductor devices with semiconductor devices only |
H03F 3/56
|
Amplifiers using transit-time effect in tubes or semiconductor devices using klystrons |
H03F 3/58
|
Amplifiers using transit-time effect in tubes or semiconductor devices using travelling-wave tubes |
H03F 3/60
|
Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators |
H03F 3/62
|
Two-way amplifiers |
H03F 3/64
|
Two-way amplifiers with tubes only |
H03F 3/66
|
Amplifiers simultaneously generating oscillations of one frequency and amplifying signals of another frequency |
H03F 3/68
|
Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics |
H03F 3/70
|
Charge amplifiers |
H03F 3/72
|
Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal |
H03F 3/181
|
Low-frequency amplifiers, e.g. audio preamplifiers |
H03F 3/183
|
Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only |
H03F 3/185
|
Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices |
H03F 3/187
|
Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits |
H03F 3/189
|
High-frequency amplifiers, e.g. radio frequency amplifiers |
H03F 3/191
|
Tuned amplifiers |
H03F 3/193
|
High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices |
H03F 3/195
|
High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits |
H03F 3/213
|
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits |
H03F 3/217
|
Class D power amplifiers; Switching amplifiers |
H03F 3/343
|
Dc amplifiers in which all stages are dc-coupled with semiconductor devices only |
H03F 3/345
|
Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with field-effect devices |
H03F 3/347
|
Dc amplifiers in which all stages are dc-coupled with semiconductor devices only in integrated circuits |
H03F 3/387
|
Dc amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only |
H03F 3/393
|
Dc amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only with field-effect devices |
H03F 5/00
|
Amplifiers with both discharge tubes and semiconductor devices as amplifying elements |
H03F 7/00
|
Parametric amplifiers |
H03F 7/02
|
Parametric amplifiers using variable-permeability element |
H03F 7/04
|
Parametric amplifiers using variable-permitivity element |
H03F 7/06
|
Parametric amplifiers with electron beam tube |
H03F 9/00
|
Magnetic amplifiers |
H03F 9/02
|
Magnetic amplifiers current-controlled, i.e. the load current flowing in both directions through a main coil |
H03F 9/04
|
Magnetic amplifiers voltage-controlled, i.e. the load current flowing in only one direction through a main coil, e.g. Logan circuits |
H03F 9/06
|
Control by voltage time integral, i.e. the load current flowing in only one direction through a main coil, whereby the main coil winding also can be used as a control winding, e.g. Ramey circuits |
H03F 11/00
|
Dielectric amplifiers |
H03F 13/00
|
Amplifiers using amplifying element consisting of two mechanically- or acoustically-coupled transducers, e.g. telephone-microphone amplifier |
H03F 15/00
|
Amplifiers using galvano-magnetic effects not involving mechanical movement, e.g. using Hall effect |
H03F 17/00
|
Amplifiers using electroluminescent element or photocell |
H03F 19/00
|
Amplifiers using superconductivity effects |
H03F 99/00
|
Subject matter not provided for in other groups of this subclass |