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H10D 1/00
|
Resistors, capacitors or inductors |
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H10D 1/20
|
Inductors |
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H10D 1/40
|
Resistors |
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H10D 1/43
|
Resistors having PN junctions |
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H10D 1/47
|
Resistors having no potential barriers |
|
H10D 1/60
|
Capacitors |
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H10D 1/62
|
Capacitors having potential barriers |
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H10D 1/64
|
Variable-capacitance diodes, e.g. varactors |
|
H10D 1/66
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Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors |
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H10D 1/68
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Capacitors having no potential barriers |
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H10D 8/00
|
Diodes |
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H10D 8/01
|
Manufacture or treatment |
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H10D 8/20
|
Breakdown diodes, e.g. avalanche diodes |
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H10D 8/25
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Zener diodes |
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H10D 8/30
|
Point-contact diodes |
|
H10D 8/40
|
Transit-time diodes, e.g. IMPATT or TRAPATT diodes |
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H10D 8/50
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PIN diodes |
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H10D 8/60
|
Schottky-barrier diodes |
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H10D 8/70
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Tunnel-effect diodes |
|
H10D 8/75
|
Tunnel-effect PN diodes, e.g. Esaki diodes |
|
H10D 8/80
|
PNPN diodes, e.g. Shockley diodes or break-over diodes |
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H10D 10/00
|
Bipolar junction transistors [BJT] |
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H10D 10/01
|
Manufacture or treatment |
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H10D 10/40
|
Vertical BJTs |
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H10D 10/60
|
Lateral BJTs |
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H10D 10/80
|
Heterojunction BJTs |
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H10D 12/00
|
Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT] |
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H10D 12/01
|
Manufacture or treatment |
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H10D 18/00
|
Thyristors |
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H10D 18/01
|
Manufacture or treatment |
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H10D 18/40
|
Thyristors with turn-on by field effect |
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H10D 18/60
|
Gate-turn-off devices |
|
H10D 18/65
|
Gate-turn-off devices with turn-off by field effect |
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H10D 18/80
|
Bidirectional devices, e.g. triacs |
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H10D 30/00
|
Field-effect transistors [FET] |
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H10D 30/01
|
Manufacture or treatment |
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H10D 30/40
|
FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels |
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H10D 30/43
|
FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels |
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H10D 30/47
|
FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] |
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H10D 30/60
|
Insulated-gate field-effect transistors [IGFET] |
|
H10D 30/62
|
Fin field-effect transistors [FinFET] |
|
H10D 30/63
|
Vertical IGFETs |
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H10D 30/64
|
Double-diffused metal-oxide semiconductor [DMOS] FETs |
|
H10D 30/65
|
Lateral DMOS [LDMOS] FETs |
|
H10D 30/66
|
Vertical DMOS [VDMOS] FETs |
|
H10D 30/67
|
Thin-film transistors [TFT] |
|
H10D 30/68
|
Floating-gate IGFETs |
|
H10D 30/69
|
IGFETs having charge trapping gate insulators, e.g. MNOS transistors |
|
H10D 30/80
|
FETs having rectifying junction gate electrodes |
|
H10D 30/83
|
FETs having PN junction gate electrodes |
|
H10D 30/87
|
FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] |
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H10D 44/00
|
Charge transfer devices |
|
H10D 44/01
|
Manufacture or treatment |
|
H10D 44/40
|
Charge-coupled devices [CCD] |
|
H10D 44/45
|
Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes |
|
H10D 48/00
|
Individual devices not covered by groups |
|
H10D 48/01
|
Manufacture or treatment |
|
H10D 48/04
|
Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form |
|
H10D 48/07
|
Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI] |
|
H10D 48/30
|
Devices controlled by electric currents or voltages |
|
H10D 48/32
|
Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched |
|
H10D 48/34
|
Bipolar devices |
|
H10D 48/36
|
Unipolar devices |
|
H10D 48/38
|
Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched |
|
H10D 48/40
|
Devices controlled by magnetic fields |
|
H10D 48/042
|
Preparation of foundation plates |
|
H10D 48/043
|
Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination |
|
H10D 48/044
|
Conversion of the selenium or tellurium to the conductive state |
|
H10D 48/045
|
Treatment of the surface of the selenium or tellurium layer after having been made conductive |
|
H10D 48/046
|
Provision of discrete insulating layers |
|
H10D 48/047
|
Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates |
|
H10D 48/048
|
Treatment of the complete device, e.g. by electroforming to form a barrier |
|
H10D 48/049
|
Ageing |
|
H10D 48/50
|
Devices controlled by mechanical forces, e.g. pressure |
|
H10D 62/00
|
Semiconductor bodies, or regions thereof, of devices having potential barriers |
|
H10D 62/10
|
Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies |
|
H10D 62/13
|
Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions |
|
H10D 62/17
|
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions |
|
H10D 62/40
|
Crystalline structures |
|
H10D 62/50
|
Physical imperfections |
|
H10D 62/53
|
Physical imperfections the imperfections being within the semiconductor body |
|
H10D 62/57
|
Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface |
|
H10D 62/60
|
Impurity distributions or concentrations |
|
H10D 62/80
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials |
|
H10D 62/81
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wellsSemiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures having periodic or quasi-periodic potential variation |
|
H10D 62/82
|
Heterojunctions |
|
H10D 62/83
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge |
|
H10D 62/84
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being selenium or tellurium only |
|
H10D 62/85
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs |
|
H10D 62/86
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO |
|
H10D 62/815
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wellsSemiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] |
|
H10D 62/822
|
Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions |
|
H10D 62/824
|
Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions |
|
H10D 62/826
|
Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions |
|
H10D 62/832
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe |
|
H10D 62/834
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants |
|
H10D 62/852
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP |
|
H10D 62/854
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants |
|
H10D 62/862
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe |
|
H10D 62/864
|
Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants |
|
H10D 64/00
|
Electrodes of devices having potential barriers |
|
H10D 64/01
|
Manufacture or treatment |
|
H10D 64/20
|
Electrodes characterised by their shapes, relative sizes or dispositions |
|
H10D 64/23
|
Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes |
|
H10D 64/27
|
Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates |
|
H10D 64/60
|
Electrodes characterised by their materials |
|
H10D 64/62
|
Electrodes ohmically coupled to a semiconductor |
|
H10D 64/64
|
Electrodes comprising a Schottky barrier to a semiconductor |
|
H10D 64/66
|
Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes |
|
H10D 64/68
|
Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator |
|
H10D 80/00
|
Assemblies of multiple devices comprising at least one device covered by this subclass |
|
H10D 80/20
|
Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups , e.g. assemblies comprising capacitors, power FETs or Schottky diodes |
|
H10D 80/30
|
Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups , e.g. assemblies comprising integrated circuit processor chips |
|
H10D 84/00
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers |
|
H10D 84/01
|
Manufacture or treatment |
|
H10D 84/02
|
Manufacture or treatment characterised by using material-based technologies |
|
H10D 84/03
|
Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology |
|
H10D 84/05
|
Manufacture or treatment characterised by using material-based technologies using Group III-V technology |
|
H10D 84/07
|
Manufacture or treatment characterised by using material-based technologies using Group II-VI technology |
|
H10D 84/08
|
Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies |
|
H10D 84/40
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs |
|
H10D 84/60
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of BJTs |
|
H10D 84/63
|
Combinations of vertical and lateral BJTs |
|
H10D 84/65
|
Integrated injection logic |
|
H10D 84/67
|
Complementary BJTs |
|
H10D 84/80
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs |
|
H10D 84/82
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components |
|
H10D 84/83
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] |
|
H10D 84/84
|
Combinations of enhancement-mode IGFETs and depletion-mode IGFETs |
|
H10D 84/85
|
Complementary IGFETs, e.g. CMOS |
|
H10D 84/86
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of Schottky-barrier gate FETs |
|
H10D 84/87
|
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of PN-junction gate FETs |
|
H10D 84/90
|
Masterslice integrated circuits |
|
H10D 86/00
|
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates |
|
H10D 86/01
|
Manufacture or treatment |
|
H10D 86/03
|
Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS] |
|
H10D 86/40
|
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs |
|
H10D 86/60
|
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices |
|
H10D 86/80
|
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors |
|
H10D 86/85
|
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components |
|
H10D 87/00
|
Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate |
|
H10D 88/00
|
Three-dimensional [3D] integrated devices |
|
H10D 89/00
|
Aspects of integrated devices not covered by groups |
|
H10D 89/10
|
Integrated device layouts |
|
H10D 89/60
|
Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] |
|
H10D 99/00
|
Subject matter not provided for in other groups of this subclass |
