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H10F 10/00
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Individual photovoltaic cells, e.g. solar cells |
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H10F 10/10
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Individual photovoltaic cells, e.g. solar cells having potential barriers |
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H10F 10/11
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Photovoltaic cells having point contact potential barriers |
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H10F 10/12
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Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers |
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H10F 10/13
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Photovoltaic cells having absorbing layers comprising graded bandgaps |
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H10F 10/14
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Photovoltaic cells having only PN homojunction potential barriers |
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H10F 10/16
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Photovoltaic cells having only PN heterojunction potential barriers |
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H10F 10/17
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Photovoltaic cells having only PIN junction potential barriers |
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H10F 10/18
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Photovoltaic cells having only Schottky potential barriers |
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H10F 10/19
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Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions |
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H10F 10/142
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Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells |
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H10F 10/144
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Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells |
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H10F 10/161
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Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells |
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H10F 10/162
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Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells |
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H10F 10/163
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Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells |
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H10F 10/164
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Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells |
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H10F 10/165
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Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells |
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H10F 10/166
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Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells |
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H10F 10/167
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Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells |
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H10F 10/172
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Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells |
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H10F 10/174
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Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials |
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H10F 19/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules |
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H10F 19/10
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions |
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H10F 19/20
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions |
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H10F 19/30
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising thin-film photovoltaic cells |
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H10F 19/31
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate |
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H10F 19/33
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Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers |
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H10F 19/35
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Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers |
|
H10F 19/37
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate comprising means for obtaining partial light transmission through the integrated devices, or the assemblies of multiple devices, e.g. partially transparent thin-film photovoltaic modules for windows |
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H10F 19/40
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration |
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H10F 19/50
|
Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components |
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H10F 19/70
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising bypass diodes |
|
H10F 19/75
|
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate |
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H10F 19/80
|
Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells |
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H10F 19/85
|
Protective back sheets |
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H10F 19/90
|
Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers |
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H10F 30/00
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors |
|
H10F 30/10
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors |
|
H10F 30/20
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors |
|
H10F 30/21
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation |
|
H10F 30/22
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes |
|
H10F 30/24
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors |
|
H10F 30/26
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors |
|
H10F 30/28
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors |
|
H10F 30/29
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation |
|
H10F 30/221
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction |
|
H10F 30/222
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction |
|
H10F 30/223
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier |
|
H10F 30/225
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes |
|
H10F 30/227
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier |
|
H10F 30/282
|
Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors |
|
H10F 30/292
|
Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors |
|
H10F 30/295
|
Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors |
|
H10F 30/298
|
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors |
|
H10F 39/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays |
|
H10F 39/10
|
Integrated devices |
|
H10F 39/12
|
Image sensors |
|
H10F 39/15
|
Charge-coupled device [CCD] image sensors |
|
H10F 39/18
|
Complementary metal-oxide-semiconductor [CMOS] image sensorsPhotodiode array image sensors |
|
H10F 39/90
|
Assemblies of multiple devices |
|
H10F 39/95
|
Assemblies of multiple devices comprising at least one integrated device covered by group , e.g. comprising integrated image sensors |
|
H10F 55/00
|
Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto |
|
H10F 55/10
|
Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices |
|
H10F 55/15
|
Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices |
|
H10F 55/20
|
Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers |
|
H10F 55/25
|
Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices |
|
H10F 55/155
|
Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate |
|
H10F 55/255
|
Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate |
|
H10F 71/00
|
Manufacture or treatment of devices covered by this subclass |
|
H10F 71/10
|
Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material |
|
H10F 77/00
|
Constructional details of devices covered by this subclass |
|
H10F 77/10
|
Semiconductor bodies |
|
H10F 77/12
|
Active materials |
|
H10F 77/14
|
Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies |
|
H10F 77/16
|
Material structures, e.g. crystalline structures, film structures or crystal plane orientations |
|
H10F 77/20
|
Electrodes |
|
H10F 77/30
|
Coatings |
|
H10F 77/40
|
Optical elements or arrangements |
|
H10F 77/42
|
Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means |
|
H10F 77/45
|
Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements |
|
H10F 77/48
|
Back surface reflectors [BSR] |
|
H10F 77/50
|
Encapsulations or containers |
|
H10F 77/60
|
Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations |
|
H10F 77/63
|
Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling |
|
H10F 77/67
|
Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements |
|
H10F 77/70
|
Surface textures, e.g. pyramid structures |
|
H10F 77/80
|
Arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation, e.g. for space applications |
|
H10F 77/90
|
Energy storage means directly associated or integrated with photovoltaic cells, e.g. capacitors integrated with photovoltaic cells |
|
H10F 77/121
|
Active materials comprising only selenium or only tellurium |
|
H10F 77/122
|
Active materials comprising only Group IV materials |
|
H10F 77/123
|
Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe |
|
H10F 77/124
|
Active materials comprising only Group III-V materials, e.g. GaAs |
|
H10F 77/162
|
Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials |
|
H10F 77/164
|
Polycrystalline semiconductors |
|
H10F 77/166
|
Amorphous semiconductors |
|
H10F 77/169
|
Thin semiconductor films on metallic or insulating substrates |
|
H10F 77/1223
|
Active materials comprising only Group IV materials characterised by the dopants |
|
H10F 77/1226
|
Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC |
|
H10F 99/00
|
Subject matter not provided for in other groups of this subclass |
