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H10H 20/00
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Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED] |
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H10H 20/01
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Manufacture or treatment |
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H10H 20/80
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Constructional details |
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H10H 20/81
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Bodies |
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H10H 20/82
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Roughened surfaces, e.g. at the interface between epitaxial layers |
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H10H 20/83
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Electrodes |
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H10H 20/84
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Coatings, e.g. passivation layers or antireflective coatings |
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H10H 20/85
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Packages |
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H10H 20/811
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Bodies having quantum effect structures or superlattices, e.g. tunnel junctions |
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H10H 20/812
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Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures |
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H10H 20/813
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Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies |
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H10H 20/814
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Bodies having reflecting means, e.g. semiconductor Bragg reflectors |
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H10H 20/815
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Bodies having stress relaxation structures, e.g. buffer layers |
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H10H 20/816
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Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures |
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H10H 20/817
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Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous |
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H10H 20/818
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Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions |
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H10H 20/819
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Bodies characterised by their shape, e.g. curved or truncated substrates |
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H10H 20/821
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Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions |
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H10H 20/822
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Materials of the light-emitting regions |
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H10H 20/823
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Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO |
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H10H 20/824
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Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP |
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H10H 20/825
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Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN |
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H10H 20/826
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Materials of the light-emitting regions comprising only Group IV materials |
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H10H 20/831
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Electrodes characterised by their shape |
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H10H 20/832
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Electrodes characterised by their material |
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H10H 20/833
|
Transparent materials |
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H10H 20/841
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Reflective coatings, e.g. dielectric Bragg reflectors |
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H10H 20/851
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Wavelength conversion means |
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H10H 20/852
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Encapsulations |
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H10H 20/853
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Encapsulations characterised by their shape |
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H10H 20/854
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Encapsulations characterised by their material, e.g. epoxy or silicone resins |
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H10H 20/855
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Optical field-shaping means, e.g. lenses |
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H10H 20/856
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Reflecting means |
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H10H 20/857
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Interconnections, e.g. lead-frames, bond wires or solder balls |
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H10H 20/858
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Means for heat extraction or cooling |
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H10H 29/00
|
Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group |
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H10H 29/01
|
Manufacture or treatment |
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H10H 29/02
|
Manufacture or treatment using pick-and-place processes |
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H10H 29/03
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Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions |
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H10H 29/10
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Integrated devices comprising at least one light-emitting semiconductor component covered by group |
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H10H 29/14
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Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components |
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H10H 29/20
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Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group |
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H10H 29/24
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Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices |
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H10H 29/30
|
Active-matrix LED displays |
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H10H 29/32
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Active-matrix LED displays characterised by the geometry or arrangement of elements within a subpixel, e.g. arrangement of the transistor within its RGB subpixel |
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H10H 29/34
|
Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels |
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H10H 29/37
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Pixel-defining structures, e.g. banks between the LEDs |
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H10H 29/39
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Connection of the pixel electrodes to the driving transistors |
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H10H 29/41
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Insulating layers formed between the driving transistors and the LEDs |
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H10H 29/45
|
Active-matrix LED displays comprising two substrates, each having active devices thereon, e.g. displays comprising LED arrays and driving circuitry on different substrates |
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H10H 29/49
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Interconnections, e.g. wiring lines or terminals |
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H10H 29/80
|
Constructional details |
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H10H 29/85
|
Packages |
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H10H 29/851
|
Wavelength conversion means |
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H10H 29/852
|
Encapsulations |
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H10H 29/853
|
Encapsulations characterised by their shape |
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H10H 29/854
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Encapsulations characterised by their material, e.g. epoxy or silicone resins |
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H10H 29/855
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Optical field-shaping means, e.g. lenses |
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H10H 29/856
|
Reflecting means |
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H10H 99/00
|
Subject matter not provided for in other groups of this subclass |
