A method of measurement and control of the surface potential of a sample using measuring the distribution of kinetic energy of charged particles emitted from a surface of a sample. A shift in kinetic energy of the charged particles is determined and the surface potential of the surface of the sample is changed in response the shift in kinetic energy of the charged particles.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
Methods and systems for feed- forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
4.
SILICON GERMANIUM THICKNESS AND COMPOSITION DETERMINATION USING COMBINED XPS AND XRF TECHNOLOGIES
Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
G01D 21/02 - Measuring two or more variables by means not covered by a single other subclass
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
5.
METHODS AND SYSTEMS FOR MEASURING PERIODIC STRUCTURES USING MULTI-ANGLE X-RAY REFLECTANCE SCATTEROMETRY (XRS)
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
G01B 15/00 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
H01L 21/66 - Testing or measuring during manufacture or treatment
6.
METHODS AND SYSTEMS FOR FABRICATING PLATELETS OF A MONOCHROMATOR FOR X-RAY PHOTOELECTRON SPECTROSCOPY
Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
8.
A PHOTOELECTRON SPECTROSCOPY APPARATUS AND METHOD OF USE
According to one aspect of the present invention, a substrate processing system is provided. The system may include a chamber wall enclosing a chamber, a substrate support positioned within the chamber to support a substrate, an electromagnetic radiation source to emit electromagnetic radiation onto the substrate on the substrate support, the electromagnetic radiation causing photoelectrons to be emitted from a material on the substrate, an analyzer to capture the photoelectrons emitted from the substrate, and a magnetic field generator to generate a magnetic field within the chamber and guide the photoelectrons from the substrate to the analyzer.
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
According to one embodiment of the invention, a method for analyzing data from an instrument is disclosed. The raw data generated by the instrument, along with configuration data generated by a user, is packaged into a calling model. The raw data may include, for example, counts having a certain kinetic energy when analyzing photoelectron spectroscopy data. The configuration data may include several parameters selected by the user based on the composition and configuration of the structure being measured. The calling model may serve as an interface between the instrument and an engine for generating an algorithm for returning desired results to the user. The engine then generates the algorithm as well as the results specified by the user, and the calling model returns the results to the user. This allows a specific algorithm and results for a specific measured sample or structure to be generated using known algorithms and functions.
⏧0095] According to one embodiment of the invention, photoelectron spectroscopy is used to determine the thickness of one or more layers in a single or multi-layer structure on a substrate. The thickness may be determined by measuring the intensities of two photoelectron species or other atom-specific characteristic electron species emitted by the structure when bombarded with photons. A predictive intensity function that is dependent on the thickness of a layer is determined for each photoelectron species. A ratio of two predictive intensity functions is formulated, and the ratio is iterated to determine the thickness of a layer of the structure. According to one embodiment, two photoelectron species may be measured from a single layer to determine a thickness of that layer. According to another embodiment, two photoelectron species from different layers or from a substrate may be measured to determine a thickness of a layer.
09 - Scientific and electric apparatus and instruments
Goods & Services
Metrology systems comprised of computer hardware and x-ray equipment for measuring physical composition and thickness of thin films, for use in the semiconductor manufacturing process
09 - Scientific and electric apparatus and instruments
Goods & Services
Metrology systems comprised of computer hardware and x-ray equipment for measuring physical composition and thickness of thin films, for use in the semiconductor manufacturing process
