Abstract

The invention relates in particular to a method for producing a device comprising at least two thin layers and intended to be implemented in particular in the fields of optoelectronics and photovoltaics, the method comprising the following steps: providing a silicon wafer (c-Si) (2); loading the silicon wafer (c-Si) (2) into a first reactor in order to produce a thin germanium layer (Ge) (3) by plasma-assisted chemical vapor deposition, optionally with a silicon gradient (Si) in the first nanometers, so as to obtain an intermediate device; loading the intermediate device into a second reactor; then depositing and epitaxially growing a thin gallium arsenide layer (AsGa) (4) by chemical vapor deposition at low temperature and reduced pressure (Remote Plasma Chemical Vapor Deposition or RP-CVD).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H10F 10/142 - Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells

Abstract

The invention relates to a tandem photovoltaic cell (1), comprising a rear junction layer (2) with a first light absorption spectrum and a front junction layer (4) with a second light absorption spectrum, and a bonding layer (6) located between them, the bonding layer (6) being of a transparent and conductive material. The material of the at least one bonding layer (6) comprises among a filler (8) a distribution of microscopic hollow tube shape studs (10) linking the top of the at least one rear junction layer (2) and the bottom of the front junction layer (4). The invention also relates to a photovoltaic panel (100) with such a cell (1), and to production methods of such a cell (1).

IPC Classes  ?

• H10F 19/40 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration

Abstract

The invention relates to a cooled manipulator (10) for an ultrahigh-vacuum-compatible process device for a structure comprising one or more layers. According to the invention, the cooled manipulator for an ultrahigh-vacuum-compatible process device comprises: - a cooling device (12) comprising a solid material; - a rotating support (14) secured to the cooling device; - a tank (16) fed by a flow of a cryogenic fluid, configured to be moved between two positions (P1) and (P2), the first in which the tank is in contact with the cooling device, the second in which the tank is not in contact with the cooling device.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

The invention relates to an instrument for measuring the curvature of a surface of a sample (8), comprising a light source (1) and a mask (2), le light source (1) illuminating the mask (2) so as to generate a light beam (10) incident on the surface of the sample and to form a light beam (20) reflected by the sample. According to the invention, the mask (2) comprises a transparent background and opaque patterns (14) arranged at predetermined positions, the opaque patterns (14) of the mask having a total surface area smaller than the surface area of the transparent background, the instrument comprises an imaging system (5) and a camera (6) suitable for forming an image (32) of the mask by reflection on the sample (8), an image processing system being suitable for processing the image (32) of the mask by reflection on the surface of the sample, so as to deduce therefrom the radius of the curvature of the sample (8).

IPC Classes  ?

• G01B 11/255 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
• G01N 21/47 - Scattering, i.e. diffuse reflection
• G01N 21/55 - Specular reflectivity

Abstract

The invention relates to an instrument for measuring the curvature of a surface of a sample (8), comprising a light source (1) and a mask (2), the light source (1) illuminating the mask (2) so as to generate a light beam (10) incident on the surface of the sample (8) and to form a light beam (20) reflected by the sample. According to the invention, the mask (2) comprises a transparent background and opaque patterns (14) arranged at predetermined positions, the opaque patterns (14) of the mask having a total surface area smaller than the surface area of the transparent background, the instrument comprises an imaging system (5) and a camera (6) suitable for forming an image (32) of the mask by reflection on the sample (8), an image-processing system being suitable for processing the image (32) of the mask by reflection on the surface of the sample, so as to deduce therefrom the radius of curvature of the sample (8).

IPC Classes  ?

• G01B 11/25 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. moiré fringes, on the object
• G01B 11/255 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
• G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
• G01N 21/47 - Scattering, i.e. diffuse reflection
• G01N 21/55 - Specular reflectivity

Abstract

The invention relates to an evaporation cell (1) for vacuum evaporation chamber, the evaporation cell (1) comprising a crucible (5), the crucible (5) being adapted to receive a solid or liquid material to be sublimated or evaporated, heating means (3) to heat the material in the crucible, a nozzle (6) placed at an open end of the crucible (5), the nozzle (6) comprising a frustoconical portion (61) having an opening (60) adapted for the passage of a flow of evaporated or sublimated material towards the vacuum evaporation chamber, and a cover (7) placed on the nozzle (6), the cover (7) having an opening (70) arranged about the frustoconical portion (61) of the nozzle (6). According to the invention, the cover (7) has at least one frustoconical portion (71, 72, 73) arranged about the frustoconical portion (61) of the nozzle (6), the cover (7) forming a thermal barrier between the crucible (5) and the vacuum evaporation chamber.

IPC Classes  ?

• C23C 14/24 - Vacuum evaporation
• C23C 14/26 - Vacuum evaporation by resistance or inductive heating of the source
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material

Abstract

The present invention refers to a photovoltaic cell (1) comprising a heterojunction with a base layer (L4, L4', L4'') made from an Aluminium-Arsenic-basedalloy and an emitter layer (L3, L3') made from an Indium-Phosphorous based alloy wherein the emitter layer (L3, L3') has a thickness smaller than 100 nm and acts as a passivation layer to prevent oxidation of the base layer and reduces surface recombination (L4, L4', L4'').

IPC Classes  ?

• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/0725 - Multiple junction or tandem solar cells
• H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
• H01L 31/075 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• H01L 31/076 - Multiple junction or tandem solar cells
• H01L 31/043 - Mechanically stacked PV cells
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Goods & Services

Instruments for measuring the curvature of a substrate on which a thin film is deposited or on which a vacuum treatment is carried out by a physical or chemical process, the substrate in question being a wafer of a metallic or semiconductor element, these instruments being used for in situ monitoring of the growth of the thin film in real time.

Goods & Services

Instruments for measuring the curvature of a substrate on which a thin film is deposited or on which a vacuum treatment is carried out by a physical or chemical process, the substrate in question being a wafer of a metallic or semiconductor element, these instruments being used for in situ monitoring of the growth of the thin film in real time

Abstract

The leak detection device is adapted to test the tightness of an inner tank (24) of a valve cell (20) of the vacuum deposition apparatus, either at its filling flange (25) or at its inner tank valve (28). A vacuum deposition apparatus equipped with a helium detector (51) mounted as a by-pass of the output of a high-flow-rate turbomolecular pump (42) which is connected to the vacuum deposition chamber (30) of the vacuum deposition apparatus by a slide gate valve (43). A valve-cell vacuum deposition apparatus equipped with a helium-based leak detection device including gas injection elements (52, 53) adapted to inject a gaseous mixture into the outer enclosure, the gaseous mixture being consisted of pure helium and an inert gas, and a method for detecting a leak in a valve-cell vacuum deposition apparatus are also described.

IPC Classes  ?

• G01M 3/04 - Investigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
• C23C 16/52 - Controlling or regulating the coating process
• C23C 14/24 - Vacuum evaporation
• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
• F22B 1/06 - Methods of steam generation characterised by form of heating method by exploitation of the heat content of hot heat carriers the heat carrier being moltenUse of molten metal, e.g. zinc, as heat transfer medium
• G01M 3/20 - Investigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material
• G01M 3/22 - Investigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material for pipes, cables, or tubesInvestigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material for pipe joints or sealsInvestigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material for valves

Abstract

The present invention concerns an injection system for an apparatus for depositing thin layers by vacuum evaporation, said injection system comprising a reservoir intended to receive a source of material to be evaporated, means of heating the reservoir capable of evaporating said material, at least one injection ramp comprising an inner conduit connected to the reservoir in such a way as to receive said evaporated material coming from the reservoir and a plurality of nozzles, each nozzle comprising at least a communication channel between said inner conduit and the external portion of the ramp in such a way as to discharge the evaporated material into said vacuum evaporation chamber. According to the invention, the injection ramp comprises a plurality of injection modules mechanically connected to each other in series along a longitudinal direction, each injection module comprising a plurality of injection nozzles, and said injection ramp comprises means of adjusting the orientation of said injection modules about said longitudinal direction in such a way as to align said injection nozzles along a line parallel to the longitudinal direction of the injection ramp.

IPC Classes  ?

• C23C 14/24 - Vacuum evaporation
• C23C 14/26 - Vacuum evaporation by resistance or inductive heating of the source
• C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Goods & Services

Machines and machine tools; pumps (machines or machine parts); valves (parts of machines). Scientific apparatus and instruments, particularly molecular beam epitaxy apparatus, vacuum deposition apparatus, apparatus for the manufacture of micro-electric components, apparatus for the manufacture of semi-conductor devices; scientific apparatus for the manufacture of ultra-high vacuum products; gas testing instruments; gauges; electric wires. Scientific and technological services and research and design relating thereto; industrial analysis and research services; surveying (engineering work); technical project studies; scientific laboratory services; chemical research; research in the field of mechanics; technical research; research and development of new products for others; design and development of computers and software.

Goods & Services

Machines, namely, robots and machines tools Molecular beam epitaxy machines; vacuum deposition machines; machines for the manufacture of micro-electric components; machines for the manufacture of semi-conductor devices; pumps as machines or machines components; valves as machine components Scientific apparatus and instruments, particularly molecular beam epitaxy apparatus, vacuum deposition apparatus, apparatus for the manufacture of micro-electric components, apparatus for the manufacture of semi-conductor devices; scientific apparatus for the manufacture of ultra-high vacuum products; gas testing instruments; gauges; electric wires Evaluations, assessments and research in the fields of science and technology provided by engineers; surveying; conducting technical feasibility studies; scientific laboratory services; chemical research; research in the field of mechanical engineering and physics; Technical research in the field of semiconductor processing technology; research and development of new products for others; design and development of computers and software

Abstract

An injector for a vacuum evaporation source includes an injection duct (1) having a longitudinal axis (11) and an inlet port (2) able to be connected to a vacuum evaporation source, and at least one nozzle (3) for diffusing a vaporized material, the nozzle (3) having a lateral face (4), and an upper face (5). The nozzle (3) includes a main channel (6) emerging outside the injection duct (1) and at least a lateral feeding channel (7) connecting the interior of the injection duct (1) to the main channel (6). The lateral feeding channel (7) has a lateral orifice (8) emerging inside the injection duct (1) through the lateral face (4) of the nozzle (3) for avoiding the clogging of the nozzle (3) by oxidized materials.

IPC Classes  ?

• C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
• C23C 14/26 - Vacuum evaporation by resistance or inductive heating of the source
• C23C 14/24 - Vacuum evaporation

Abstract

L.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
• B23P 6/00 - Restoring or reconditioning objects
• C30B 29/40 - AIIIBV compounds
• C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
• C30B 23/02 - Epitaxial-layer growth

Abstract

The invention relates to an apparatus (6) for depositing materials by evaporation using a molecular beam and to an apparatus for fabricating semiconductor wafers comprising a central conveying module (2) having several lateral ports (3) and capable of operating in a vacuum of greater than 10-8 torr. The semiconductor wafer fabrication apparatus comprises a loading module (5) and one or more substrate treatment modules (7) operating in a vacuum of greater than 10-8 torr, each treatment module (7) being connected to one of the ports (3) of the central conveying module (2). According to the invention, the fabrication apparatus comprises at least one module (6) for depositing materials by evaporation using a molecular beam operating in a vacuum of less than 10-8 torr, said molecular beam deposition module (6) being connected to one of the ports (3) of the central conveying module (2) and capable of receiving said substrate (1) in order to deposit a film of materials on its face (A) to be treated.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof

Abstract

The present invention concerns a molecular beam epitaxy apparatus for producing wafers of semiconductor material, the device comprising a growth chamber (1) surrounding a process area (2), a main cryogenic panel having at least a lateral part (10) covering the inner surface of the lateral wall (3) of the growth chamber (1), a sample holder (6), at least one effusion cell (8) able to evaporate a material, a gas injector (9) able to inject a gaseous precursor into the growth chamber (1), pumping means (11) connected to the growth chamber (1) and able to provide high vacuum capability. According to the invention, the molecular beam epitaxy apparatus comprises an insulation enclosure (14) covering at least the inner surfaces of the growth chamber walls (3, 4, 5), said insulation enclosure (14) comprising cold parts having a temperature Tmin inferior or equal to melting point of the gaseous precursor, and hot parts having a temperature Tmin superior or equal to a temperature wherein the desorption rate of the gaseous precursor on said hot parts is at least 1000 times greater than the adsorption rate of said gaseous precursor.

IPC Classes  ?

• C30B 23/02 - Epitaxial-layer growth
• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
• C30B 29/40 - AIIIBV compounds

Abstract

The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S1. According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S1 + S2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure PL.

IPC Classes  ?

• C30B 23/02 - Epitaxial-layer growth
• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks

Abstract

The invention concerns a material evaporation chamber including a vacuum chamber (10), a first pumping unit (13) to pump said chamber and sources of material. According to the invention, a wall (23) liable to provide total or partial vacuum tightness, delineates within this chamber a first volume (25) and a second volume (22). Certain sources of material (17) having a main axis (18) are placed in the second volume (22). This second volume (22) is pumped by a second pumping unit (24). The wall (23) includes recesses (26) which are each centered on the main axis (18) of one of the sources of material (17). The evaporation chamber also comprises means (27) for plugging or clearing each of said recesses (26), said means (27) being controlled individually to protect the sources of material (17) having a main axis (18) unused.

IPC Classes  ?

• C23C 14/24 - Vacuum evaporation
• C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
• C30B 23/02 - Epitaxial-layer growth
• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Goods & Services

SCIENTIFIC [ AND ANALYTICAL ] INSTRUMENTS, namely, - ULTRAHIGH VACUUM CHAMBERS AND PARTS THEREFOR, [ SURFACE ANALYSIS UNITS ANDPARTS THEREFOR, ] AND THIN FILM DEPOSITION UNITS