Methods and systems for low etch pit density gallium arsenide crystals with boron dopant may include a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density of less than 500 cm−2, and optical absorption of 6 cm−1 or less at 940 nm. The wafer may have an etch pit density of less than 200 cm−2. The wafer may have a diameter of 6 inches or greater. The wafer may have a boron concentration between 1×1019 cm−3 and 2×1019 cm−3. The wafer may have a thickness of 300 μm or greater. Optoelectronic devices may be formed on a first surface of the wafer, which may be diced into a plurality of die and optical signals from an optoelectronic device on one side of one of the die may be communicated out a second side of the die opposite to the one side.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
H10D 62/53 - Physical imperfections the imperfections being within the semiconductor body
H10D 62/60 - Impurity distributions or concentrations
H10D 62/854 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
2.
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES
Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.
Methods and systems for low etch pit density 6 inch semi-insulating gallium arsenide wafers may include a semi-insulating gallium arsenide single crystal wafer having a diameter of 6 inches or greater without intentional dopants for reducing dislocation density, an etch pit density of less than 1000 cm−2, and a resistivity of 1×107 Ω-cm or more. The wafer may have an optical absorption of less than 5 cm−1 less than 4 cm−1 or less than 3 cm−1 at 940 nm wavelength. The wafer may have a carrier mobility of 3000 cm2/V-sec or higher. The wafer may have a thickness of 500 μm or greater. Electronic devices may be formed on a first surface of the wafer. The wafer may have a carrier concentration of 1.1×107 cm−3 or less.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/30 - Semiconductor bodies having polished or roughened surface
H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
4.
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM PHOSPHIDE
Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm−2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm−2 or less, or 100 cm−2 or less, or 10 cm−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.
C30B 29/64 - Flat crystals, e.g. plates, strips or discs
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 11/14 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method characterised by the seed, e.g. its crystallographic orientation
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
5.
Method and system for vertical gradient freeze 8 inch gallium arsenide substrates
Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
H01L 29/30 - Semiconductor bodies having polished or roughened surface
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
7.
Low etch pit density, low slip line density, and low strain indium phosphide
−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 11/14 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method characterised by the seed, e.g. its crystallographic orientation
C30B 29/64 - Flat crystals, e.g. plates, strips or discs
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/34 - Semiconductor bodies having polished or roughened surface the imperfections being on the surface
8.
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES
Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.
01 - Chemical and biological materials for industrial, scientific and agricultural use
06 - Common metals and ores; objects made of metal
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Gallium Arsenide and Indium Phosphide as raw materials for use in the manufacture of compound semiconductor materials and substrates for use in the telecommunications industry, fiber optic telecommunications industry, high-speed networking industry, display and lighting industry, semiconductor materials and devices industry, light emitting diode industry, electro- and opto-electronic device industry, satellite communications systems industry, communications semiconductor industry, wireless devices industry, laser industry, consumer electronics industry, radar industry and direct broadcast television systems industry Germanium as a raw material for use in the manufacture of compound semiconductor materials and substrates Semiconductor wafers Design, engineering design, research and development services in the field of semiconductor materials and semiconductor substrates for scientific and technological applications
10.
Low etch pit density, low slip line density, and low strain indium phosphide
−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 11/14 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method characterised by the seed, e.g. its crystallographic orientation
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
11.
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
H01L 29/30 - Semiconductor bodies having polished or roughened surface
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
12.
Low etch pit density gallium arsenide crystals with boron dopant
−3. The wafer may have a thickness of 300 μm or greater. Optoelectronic devices may be formed on a first surface of the wafer, which may be diced into a plurality of die and optical signals from an optoelectronic device on one side of one of the die may be communicated out a second side of the die opposite to the one side.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
13.
Implantable weight control device to promote early and prolonged satiety in a bariatric patient
The present disclosure provides an inflatable weight control device that is implanted long-term with an endoscope in obese and bariatric human patients to promote early and prolonged satiety. The device includes a flexible, inflatable member coupled to a valve body assembly and an elongated durable module residing within the flexible member. The flexible member is selectively inflated to form two bulbs with a central passageway extending through the bulbs and the valve body assembly. Once the bulbs are inflated, the device is retained within the patient's pyloric valve to form a gastric outlet obstruction wherein chyme accumulates and then is directed through the central passageway to reach the patient's duodenum. Due to its unique configuration, the implanted device reduces gastric outflow which results in early and prolonged satiety when the patient consumes normal-sized meals or food portions, thereby reducing food consumption and increasing the patient's weight loss.
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
Compound semiconductor materials and substrates, namely,
gallium arsenide, indium phosphide, germanium, gallium
phosphide, gallium nitride and silicon carbide for use in
the telecommunications industry, fiber optic
telecommunications industry, high-speed networking industry,
display and lighting industry, semiconductor materials and
devices industry, light emitting diode industry, electro-
and opto-electronic device industry, satellite
communications systems industry, communications
semiconductor industry, wireless devices industry, laser
industry, consumer electronics industry, radar industry and
direct broadcast television systems industry.
15.
Low etch pit density (EPD) semi-insulating III-V wafers
Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Compound semiconductor materials and substrates, namely, Gallium Arsenide, Indium Phosphide, Germanium, Gallium Phosphide, Gallium Nitride and Silicon Carbide for use in the telecommunications industry, fiber optic telecommunications industry, high-speed networking industry, display and lighting industry, semiconductor materials and devices industry, light emitting diode industry, electro- and opto-electronic device industry, satellite communications systems industry, communications semiconductor industry, wireless devices industry, laser industry, consumer electronics industry, radar industry and direct broadcast television systems industry; compound semiconductor materials and substrates included in Class 1; chemicals used in industry, science and photography, as well as in agriculture, horticulture and forestry; Gallium Arsenide; Indium Phosphide; Germanium; Gallium Phoshide; Gallium Nitride; Silicon Carbide; Silicon. Semi-conductors; integrated circuits; ingots being prepared substrates for the manufacture of semi-conductors; telecommunication apparatus and instruments; fiber optic telecommunication apparatus and instruments; visual display and lighting apparatus and instruments included in Class 9; light emitting diodes; consumer electronics included in Class 9; satellite communications apparatus and instruments; wireless electronic devices included in class 9; laser apparatus and instruments; radar; direct broadcast television equipment and apparatus; entertainment equipment; parts, fittings and accessories therefor included in Class 9. Scientific and technological services and research and design relating thereto; industrial analysis and research services.
17.
Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same
Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical growth process wherein movement of a crystallizing temperature gradient relative to the raw material/crucible is achieved to melt the raw material, and growing, at a predetermined crystal growth length, the material to achieve a monocrystalline crystal, wherein monocrystalline ingots having reduced micro-pit densities are reproducibly provided.
Chemical polishing solutions and methods are disclosed for the chemical polishing of GaAs wafers. An exemplary chemical polishing solution consistent with the innovations herein may comprise dichloroisocyanurate, sulfonate, acid pyrophosphate, bicarbonate and carbonate. An exemplary chemical polishing method may comprise polishing a wafer in a chemical polishing apparatus in the presence of such a chemical polishing solution. Chemical polishing solutions and methods herein make it possible, for example, to improve wafer quality, decrease costs, and/or reduce environmental pollution.
C09K 13/00 - Etching, surface-brightening or pickling compositions
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
19.
Systems, methods and substrates of monocrystalline germanium crystal growth
Systems, methods, and substrates directed to growth of monocrystalline germanium (Ge) crystals are disclosed. In one exemplary implementation, there is provided a method for growing a monocrystalline germanium (Ge) crystal. Moreover, the method may include loading first raw Ge material into a crucible, loading second raw Ge material into a container for supplementing the Ge melt material, sealing the crucible and the container in an ampoule, placing the ampoule with the crucible into a crystal growth furnace, as well as melting the first and second raw Ge material and controlling the crystallizing temperature gradient of the melt to reproducibly provide monocrystalline germanium ingots with improved/desired characteristics.
Systems and methods are disclosed for crystal growth using VGF and VB growth processes to reduce body lineage. In one exemplary embodiment, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical gradient freeze process wherein the crystallizing temperature gradient is moved relative to the crystal and/or furnace to melt the raw material and reform it as a monocrystalline compound, and growing the crystal using a vertical Bridgman process on the wherein the ampoule/heating source are moved relative each other to continue to melt the raw material and reform it as a monocrystalline compound.
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
Compound semiconductor materials and substrates, namely, Gallium Arsenide, Indium Phosphide, Germanium, [ Gallium Phosphide, Gallium Nitride and Silicon Carbide ] for use in the telecommunications industry, fiber optic telecommunications industry, high-speed networking industry, display and lighting industry, semiconductor materials and devices industry, light emitting diode industry, electro- and opto-electronic device industry, satellite communications systems industry, communications semiconductor industry, wireless devices industry, laser industry, consumer electronics industry, radar industry and direct broadcast television systems industry
22.
Low etch pit density (EPD) semi-insulating GaAs wafers
A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.
The present invention provides an endoscopically implantable weight control device that forms a gastric outlet obstruction in a patient's digestive tract. The weight control device includes an inflatable body residing within the patient's pylorus and between the stomach and duodenum. The body features a first bulbous portion and a second bulbous portion, the exterior dimensions of the first bulbous portion exceeding the exterior dimension of the second bulbous portion. The body also includes an intermediate portion with exterior dimensions that are less than the exterior dimensions of both the first and second bulbous portions, wherein the intermediate portion resides within the patient's pyloric valve when the device is implanted. An internal passageway extends through the body, wherein the passageway receives and allows for the passage of chyme from the stomach to the duodenum. A method of treating obese patients with the inflatable weight control device utilizing a sequence of different-sized devices is also provided.
