Thermally conductive chemical mechanical polishing (CMP) pads are disclosed. In one aspect, a polishing pad for a CMP system includes at least one first material having properties for polishing a wafer and at least one second material configured to increase a heat transfer coefficient (HTC) of the polishing pad.
Carriers for polishing workpieces with flats or voids are provided. In one aspect, a substrate carrier head for a chemical mechanical planarization (CMP) system include a carrier body comprising an aperture configured to receive a wafer and a membrane having a first surface configured to contact a surface of the wafer and a second surface opposing the first surface, the membrane having a primary zone and a secondary zone. The substrate carrier head further includes a membrane cavity formed along the second surface and configured to apply pressure to the membrane within the primary zone, and a membrane support plate configured to support the secondary zone of the membrane.
B24B 37/30 - Work carriers for single side lapping of plane surfaces
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
3.
TEMPERATURE CONTROLLED SUBSTRATE CARRIER AND POLISHING COMPONENTS
Temperature controlled polishing pads are disclosed. In one aspect, a CMP system includes the use of any type of atomizing system to cool or remove energy and/or heat from the polishing pad of a CMP system. The atomizing system can use of any liquid medium in combination of any compressed gas through an orifice to cool or remove the energy and/or heat from the pad, thereby allowing for higher removal rates during CMP.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
B24B 55/02 - Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
4.
APPARATUS AND METHOD FOR IN-SITU CHEMICAL SEPARATION AND RECIRCULATION IN A CHEMICAL MECHANICAL PROCESSING SYSTEM
An apparatus and method for in-situ chemical separation and recirculation in a chemical mechanical processing system are provided. In one aspect, a chemical mechanical planarization system includes a polishing platen having a surface configured to polish a substrate and a slurry delivery system configured to deliver slurry to the surface of the polishing platen. The apparatus can further include an effluent capture apparatus configured to capture the slurry from the polishing platen, filter the captured slurry, and provide the filtered slurry to the slurry delivery system.
B24B 57/00 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
5.
APPARATUS AND METHOD FOR IN-SITU CHEMICAL SEPARATION AND RECIRCULATION IN A CHEMICAL MECHANICAL PROCESSING SYSTEM
An apparatus and method for in-situ chemical separation and recirculation in a chemical mechanical processing system are provided. In one aspect, a chemical mechanical planarization system includes a polishing platen having a surface configured to polish a substrate and a slurry delivery system configured to deliver slurry to the surface of the polishing platen. The apparatus can further include an effluent capture apparatus configured to capture the slurry from the polishing platen, filter the captured slurry, and provide the filtered slurry to the slurry delivery system.
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 53/017 - Devices or means for dressing, cleaning or otherwise conditioning lapping tools
7.
APPARATUS AND METHOD FOR CLOSED LOOP CONTROLLED COOLING IN A WAFER PROCESSING SYSTEM
An apparatus and method for closed loop controlled cooling in a wafer processing system are provided. In one aspect, a substrate carrier system includes a substrate carrier head including a carrier body and a resilient membrane attached to the carrier body. The resilient membrane has a first surface configured to contact a surface of a substrate and a second surface opposing the first surface. The carrier head further includes a membrane cavity formed along the second surface of the resilient membrane, an input manifold configured to supply a fluid to the membrane cavity, and an output manifold configured to remove the fluid from the membrane cavity. The input manifold and the output manifold are configured to provide the fluid such that the fluid has a substantially laminar flow across the membrane cavity.
B24B 55/02 - Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
8.
Method and apparatus for insitu adjustment of wafer slip detection during work piece polishing
A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.
B24B 49/04 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
9.
CARRIER FOR POLISHING WORKPIECES WITH FLATS OR VOIDS
Carriers for polishing workpieces with flats or voids are provided. In one aspect, a substrate carrier head for a chemical mechanical planarization (CMP) system include a carrier body comprising an aperture configured to receive a wafer and a membrane having a first surface configured to contact a surface of the wafer and a second surface opposing the first surface, the membrane having a primary zone and a secondary zone. The substrate carrier head further includes a membrane cavity formed along the second surface and configured to apply pressure to the membrane within the primary zone, and a membrane support plate configured to support the secondary zone of the membrane.
A method and an apparatus for in-situ monitoring of chemical mechanical planarization (CMP) processes are disclosed. In one aspect, a CMP system includes a carrier configured to retain a substrate, a platen supporting a polishing pad, an optical detector positioned on a side of the polishing pad opposite the substrate and configured to generate a first signal, one or more position encoders configured to generate second signals, and a controller. The controller is configured to receive the first signal and the second signals, identify one or more measurement sites on the substrate based on the second signals, select one or more of the measurement sites for repeated measurements based on the first signal, and determine the removal rate and/or thickness of a film of the substrate at the selected one or more of the measurement sites based on the first signal and the second signals.
B24B 49/02 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
11.
METHOD AND APPARATUS FOR IN-SITU MONITORING OF CHEMICAL MECHANICAL PLANARIZATION (CMP) PROCESSES
A method and an apparatus for in-situ monitoring of chemical mechanical planarization (CMP) processes are disclosed. In one aspect, a CMP system includes a carrier configured to retain a substrate, a platen supporting a polishing pad, an optical detector positioned on a side of the polishing pad opposite the substrate and configured to generate a first signal, one or more position encoders configured to generate second signals, and a controller. The controller is configured to receive the first signal and the second signals, identify one or more measurement sites on the substrate based on the second signals, select one or more of the measurement sites for repeated measurements based on the first signal, and determine the removal rate and/or thickness of a film of the substrate at the selected one or more of the measurement sites based on the first signal and the second signals.
Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 53/017 - Devices or means for dressing, cleaning or otherwise conditioning lapping tools
13.
CONTAINMENT AND EXHAUST SYSTEM FOR SUBSTRATE POLISHING COMPONENTS
Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.
B24B 37/20 - Lapping pads for working plane surfaces
B05B 15/58 - Arrangements for cleaningArrangements for preventing deposits, drying-out or blockageArrangements for detecting improper discharge caused by the presence of foreign matter preventing deposits, drying-out or blockage by recirculating the fluid to be sprayed from upstream of the discharge opening back to the supplying means
B08B 3/02 - Cleaning by the force of jets or sprays
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
A substrate carrier head is disclosed. In one aspect, the carrier head includes a carrier body, a substrate retainer, a first resilient membrane and a second resilient membrane. The carrier head can include an inner support plate. The substrate retainer is attached to the carrier body. The substrate retainer includes an aperture configured to receive a substrate. The first resilient membrane includes a first imperforated substrate support portion with a width W1. The second resilient membrane includes a second imperforated substrate support portion with a width W2. The second imperforated substrate support portion is positioned between the first substrate support portion and the carrier body, and is configured to selectively provide a force against at least an inner section of the first imperforated substrate support portion. The inner support plate is fixed relative to the carrier body and includes a support surface configured to support the second imperforated substrate support portion.
An apparatus for performing chemical mechanical planarization is disclosed. The apparatus includes a support, wherein an axis of rotation extends through the support. The apparatus includes at least one elongated member including a first portion and a second portion opposed to the first portion. The first portion is configured to rotatably connect to the support and pivot the elongated member about the axis of rotation relative to the support through an angle of rotation that is at least about 270 degrees in a single direction. The apparatus includes a carrier head configured to connect to the second portion and to hold and process a substrate.
B24B 51/00 - Arrangements for automatic control of a series of individual steps in grinding a workpiece
B24B 37/10 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
B24B 37/30 - Work carriers for single side lapping of plane surfaces
A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.
A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.
A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.
B24B 49/04 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/66 - Testing or measuring during manufacture or treatment
19.
Temperature controlled substrate carrier and polishing components
Temperature controlled polishing pads are disclosed. In one aspect, a CMP system includes the use of any type of atomizing system to cool or remove energy and/or heat from the polishing pad of a CMP system. The atomizing system can use of any liquid medium in combination of any compressed gas through an orifice to cool or remove the energy and/or heat from the pad, thereby allowing for higher removal rates during CMP.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
20.
TEMPERATURE CONTROLLED SUBSTRATE CARRIER AND POLISHING COMPONENTS
Temperature controlled polishing pads are disclosed. In one aspect, a CMP system includes the use of any type of atomizing system to cool or remove energy and/or heat from the polishing pad of a CMP system. The atomizing system can use of any liquid medium in combination of any compressed gas through an orifice to cool or remove the energy and/or heat from the pad, thereby allowing for higher removal rates during CMP.
A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.
A substrate carrier head is disclosed. In one aspect, the carrier head includes a carrier body, a substrate retainer, a first resilient membrane and a second resilient membrane. The carrier head can include an inner support plate. The substrate retainer is attached to the carrier body. The substrate retainer includes an aperture configured to receive a substrate. The first resilient membrane includes a first imperforated substrate support portion with a width W1. The second resilient membrane includes a second imperforated substrate support portion with a width W2. The second imperforated substrate support portion is positioned between the first substrate support portion and the carrier body, and is configured to selectively provide a force against at least an inner section of the first imperforated substrate support portion. The inner support plate is fixed relative to the carrier body and includes a support surface configured to support the second imperforated substrate support portion.
A system includes a CMP carrier that includes a resilient flexible membrane upon which a wafer is mounted, at least three ports for supplying air to the resilient flexible membrane to pneumatically pushing on the wafer through pressure applied throughout the surface area of the resilient flexible membrane to have more uniform pressure. Each port provides pressure to different components of the carrier to adjust pressure or vary pressure during processing of the wafer. Further, the system includes a processor and software program for implementing the CMP carrier with existing CMP machines. The software application converts the air pressure applied to the carrier into units that allow the CMP machine to receive expected data and operate in accordance with the existing commands.
A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.
B24B 37/00 - Lapping machines or devicesAccessories
C23G 1/00 - Cleaning or pickling metallic material with solutions or molten salts
H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
25.
CMP MACHINE WITH IMPROVED THROUGHPUT AND PROCESS FLEXIBILITY
An apparatus for performing chemical mechanical planarization is disclosed. The apparatus includes a support, wherein an axis of rotation extends through the support. The apparatus includes at least one elongated member including a first portion and a second portion opposed to the first portion. The first portion is configured to rotatably connect to the support and pivot the elongated member about the axis of rotation relative to the support through an angle of rotation that is at least about 270 degrees in a single direction. The apparatus includes a carrier head configured to connect to the second portion and to hold and process a substrate.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
B24B 37/10 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
B24B 41/00 - Component parts of grinding machines or devices, such as frames, beds, carriages or headstocks
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
26.
ATMOSPHERIC PLASMA IN WAFER PROCESSING SYSTEM OPTIMIZATION
A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes the atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.
C23G 1/00 - Cleaning or pickling metallic material with solutions or molten salts
H01J 7/24 - Cooling arrangementsHeating arrangementsMeans for circulating gas or vapour within the discharge space
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
A system includes a CMP carrier that includes a resilient flexible membrane upon which a wafer is mounted, at least three ports for supplying air to the resilient flexible membrane to pneumatically pushing on the wafer through pressure applied throughout the surface area of the resilient flexible membrane to have more uniform pressure. Each port provides pressure to different components of the carrier to adjust pressure or vary pressure during processing of the wafer. Further, the system includes a processor and software program for implementing the CMP carrier with existing CMP machines. The software application converts the air pressure applied to the carrier into units that allow the CMP machine to receive expected data and operate in accordance with the existing commands.
B24B 49/10 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
B24B 37/30 - Work carriers for single side lapping of plane surfaces
B24B 37/005 - Control means for lapping machines or devices
28.
METHOD AND APPARATUS FOR WAFER BACKGRINDING AND EDGE TRIMMING ON ONE MACHINE
A workpiece processing apparatus is provided. The apparatus includes a rotary turntable having one or more spindles thereon, the turntable being configured to rotate about a turntable axis. Each of the spindles is configured to receive and secure thereon a workpiece to be processed by the apparatus. Each of the spindles can rotate about their own independent axes. The apparatus includes one or more grind spindles that overlay the turntable and are configured to communicate with the workpieces. The apparatus processes the workpieces by transitioning between first and second operational states. The first operational state centers the spindles and the workpieces thereon under the grind spindle to condition an entire top surface of the workpieces. The second operational state offsets the spindles from the center of the grind spindle to condition a perimeter edge of the workpieces. A controller can govern the transition between first and second operational states.
A workpiece processing apparatus is provided. The apparatus includes a rotary turntable having one or more spindles thereon, the turntable being configured to rotate about a turntable axis. Each of the spindles is configured to receive and secure thereon a workpiece to be processed by the apparatus. Each of the spindles can rotate about their own independent axes. The apparatus includes one or more grind spindles that overlay the turntable and are configured to communicate with the workpieces. The apparatus processes the workpieces by transitioning between first and second operational states. The first operational state centers the spindles and the workpieces thereon under the grind spindle to condition an entire top surface of the workpieces. The second operational state offsets the spindles from the center of the grind spindle to condition a perimeter edge of the workpieces. A controller can govern the transition between first and second operational states.
B24B 37/10 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
B24B 9/06 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
30.
Apparatus and method for surface grinding and edge trimming workpieces
An apparatus for performing both edge trimming and surface grinding includes two spindles for holding two workpieces, a bridge element laterally movable relative to the spindles, and two grinding wheels coupled to the bridge element. The apparatus may be a surface grinding apparatus that includes a system for enabling the surface grinding apparatus to additionally perform edge trimming. A method for processing the workpieces entails placing the two workpieces on the two spindles of the apparatus, directing the bridge element to move laterally to an edge trimming position to trim the outer edge of one workpiece using one of the grinding wheels, to move laterally to another edge trimming position to trim the outer edge of the other workpiece using one of the grinding wheels, and to move laterally to surface grinding positions to perform surface grinding on both of the workpieces using one or both of the grinding wheels.
patents
