A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
09 - Scientific and electric apparatus and instruments
38 - Telecommunications services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Integrated circuits; SIM cards; transceivers;
semiconductors; wide area network (WAN) hardware;
transmitters (telecommunications); electronic signal
receivers; computer hardware and computer peripherals;
computer hardware, namely integrated wireless modules for
mobile computing and remote connectivity, wireless network
adapters, USB adapters, modems, network routers and
gateways; computer hardware for the provision of wireless
content; computer hardware for creating, facilitating and
managing remote access and communication with local area
networks (LANs), virtual private networks (VPNs), wide area
networks (WANs), software defined networks (SDNs) and global
computer networks; computer hardware development kit,
comprising hardware development tools in the nature of
software, antennas, SIM cards and printed circuits, software
development tools and electronic publications, namely
downloadable educational material on computers, computer
hardware and software, technical documentation and wiring
diagrams for developing wireless or wired telecommunication
hardware; computer software for wireless telecommunications,
namely for setting up, providing, configuring, controlling,
monitoring, diagnosing and managing wireless network
apparatus; SIM card management software platform and
apparatus for enabling, monitoring, managing and leveling
connectivity apparatus and services; computer software
enabling the connecting, creating, facilitating and managing
of remote access and communication with computers, mobile
apparatus and smartphones, connected objects, information
systems and sources, with local area networks (LANs),
virtual private networks (VPNs), wide area networks (WANs),
software defined networks (SDNs) and global computer
networks; computer software for managing apparatus,
firmware, integrated applications and airtime subscriptions
via global networks; computer software for collecting,
storing and processing data and events via a wireless
communication network in order to create operational
transparency for remote apparatus; software platform for use
in the development of machine-to-machine (M2M) software
solutions and the Internet of Things; software for providing
communication integration services for machine-to-machine
(M2M) and Internet of Things namely the integration of
different computer systems, networks, hardware and software. Providing connectivity and telecommunication services for
machine-to-machine (M2M) communication apparatus and the
Internet of Things, so that they can communicate with each
other and with servers via wireless networks; providing
telecommunication connections to wireless networks through
the provision and management of wireless network
connectivity. Designing and developing wireless networks, apparatus,
hardware and software; engineering services in the field of
wireless networks, apparatus, hardware and software,
machine-to-machine (M2M) communication and the Internet of
Things; designing and developing data intelligence software
solutions for the purpose of data management, analysis,
interpretation, identification and reporting in order to
enable decision-making and adoption of measures for
networked apparatus and Internet of Things systems; software
as a service (SaaS) services with software that enables
users to configure, monitor and configure machine-to-machine
(M2M) systems and the Internet of Things, and to manage
apparatus, firmware, integrated applications and airtime
subscriptions via global networks; software as a service
(SaaS) services with a software platform that collects and
transmits data from apparatus, objects, connected
information systems and sources and integrates the data with
enterprise software, web and mobile applications.
This application relates to data driver circuits, in particular to laser drivers. A driver is configured to receive an input signal and generate a corresponding driver output signal for driving an output device, such as a laser. A bias generator has a first output branch connected to an output node of the bias generator and a first control loop is configured to control a current in the first output branch to have a defined relationship to a bandgap referred current to provide a first bias current for biasing the output device. A driver output node is coupled to the driver and also to the output node of the bias generator, for outputting the driver output signal and the first bias current to the output device.
H03K 17/60 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being bipolar transistors
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 19/00 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits
09 - Scientific and electric apparatus and instruments
38 - Telecommunications services
42 - Scientific, technological and industrial services, research and design
Goods & Services
(1) Circuits intégrés; cartes SIM; émetteurs-récepteurs; semi-conducteurs; matériel pour réseaux longue distance (WAN); émetteurs (télécommunications); récepteurs de signaux électroniques; matériel informatique et périphériques informatiques; matériel informatique, à savoir modules sans fil intégrés pour l'informatique mobile et la connectivité à distance, adaptateurs réseau sans fil, adaptateurs USB, modems, routeurs réseau et passerelles; matériel informatique pour la mise à disposition sans fil de contenus; matériel informatique pour la création, la facilitation et la gestion de l'accès à distance et de la communication avec les réseaux locaux (LAN), les réseaux privés virtuels (VPN), les réseaux étendus (WAN), les réseaux définis par logiciel (SDN) et les réseaux informatiques mondiaux; kit de développement de matériel informatique, comprenant des outils de développement matériel sous forme de logiciels, d'antenne, de carte SIM et de circuits imprimés, des outils de développement logiciel et des publications électroniques, à savoir du matériel pédagogique téléchargeable sur les ordinateurs, le matériel informatique et les logiciels, de la documentation technique et des schémas de câblage pour le développement de matériel de télécommunication sans fil ou filaire; logiciels informatiques pour les télécommunications sans fil, à savoir pour la mise en place, mise à disposition, configuration, contrôle, surveillance, diagnostic et gestion d'appareils de réseau sans fil; plate-forme logicielle de gestion de cartes SIM et d'appareils permettant, surveillant, gérant et mettant à niveau les appareils et les services de connectivité; logiciel informatique permettant de connecter, créer, faciliter et gérer l'accès à distance et la communication avec des ordinateurs, des appareils mobiles et des smartphones, des objets connectés, des systèmes et sources d'information, avec des réseaux locaux (LAN), des réseaux privés virtuels (VPN), des réseaux étendus (WAN), des réseaux définis par logiciel (SDN) et des réseaux informatiques mondiaux; logiciel informatique pour gérer des appareils, des micrologiciels, des applications intégrées et des abonnements à du temps d'antenne via des réseaux mondiaux; logiciel informatique qui collecte, stocke et traite des données et des événements via un réseau de communication sans fil afin de créer une transparence opérationnelle pour les appareils distants; plateforme logicielle à utiliser dans le développement de solutions logicielles machine-to-machine (M2M) et de l'Internet des objets; logiciel pour la fourniture de services d'intégration de communication machine-to-machine (M2M) et Internet des objets, à savoir l'intégration de différents systèmes informatiques, réseaux, matériels et logiciels. (1) Fourniture de connectivité et de services de télécommunication pour les appareils de communication machine-machine (M2M) et Internet des objets, afin qu'ils puissent communiquer entre eux et avec des serveurs via des réseaux sans fil; fourniture de connexions de télécommunication à des réseaux sans fil par la mise à disposition et la gestion de la connectivité des réseaux sans fil.
(2) Conception et développement de réseaux sans fil, d'appareils, de matériel et de logiciels; services d'ingénierie dans le domaine des réseaux sans fil, des appareils, du matériel et des logiciels, de la communication de machine à machine (M2M) et de l'Internet des objets; conception et développement de solutions logicielles d'intelligence des données à des fins de gestion, d'analyse, d'interprétation, d'identification et de reporting des données afin de permettre la prise de décision et l'adoption de mesures pour les appareils en réseau et les systèmes de l'Internet des objets; services de logiciel en tant que service (SaaS) avec des logiciels qui permettent aux utilisateurs de configurer, surveiller et configurer des systèmes de machine à machine (M2M) et de l'Internet des objets, et de gérer des appareils, des micrologiciels, applications intégrées et abonnements de temps d'antenne via des réseaux mondiaux; services software as a service (SaaS) avec logiciel de plateforme logicielle qui collecte et transmet les données des appareils, objets, systèmes et sources d'information connectés et intègre les données avec les logiciels d'entreprise, web et d'applications mobiles.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Providing connectivity and telecommunication services for machine-to-machine (M2M) communication apparatus and the Internet of Things, so that they can communicate with each other and with servers via wireless networks; providing telecommunication connections to wireless networks through the provision and management of wireless network connectivity. Integrated circuits; SIM cards; transceivers; semiconductors; wide area network (WAN) hardware; transmitters (telecommunications); electronic signal receivers; computer hardware and computer peripherals; computer hardware, namely integrated wireless modules for mobile computing and remote connectivity, wireless network adapters, USB adapters, modems, network routers and gateways; computer hardware for the provision of wireless content; computer hardware for creating, facilitating and managing remote access and communication with local area networks (LANs), virtual private networks (VPNs), wide area networks (WANs), software defined networks (SDNs) and global computer networks; computer hardware development kit, comprising hardware development tools in the nature of software, antennas, SIM cards and printed circuits, software development tools and electronic publications, namely downloadable educational material on computers, computer hardware and software, technical documentation and wiring diagrams for developing wireless or wired telecommunication hardware; computer software for wireless telecommunications, namely for setting up, providing, configuring, controlling, monitoring, diagnosing and managing wireless network apparatus; SIM card management software platform and apparatus for enabling, monitoring, managing and leveling connectivity apparatus and services; computer software enabling the connecting, creating, facilitating and managing of remote access and communication with computers, mobile apparatus and smartphones, connected objects, information systems and sources, with local area networks (LANs), virtual private networks (VPNs), wide area networks (WANs), software defined networks (SDNs) and global computer networks; computer software for managing apparatus, firmware, integrated applications and airtime subscriptions via global networks; computer software for collecting, storing and processing data and events via a wireless communication network in order to create operational transparency for remote apparatus; software platform for use in the development of machine-to-machine (M2M) software solutions and the Internet of Things; software for providing communication integration services for machine-to-machine (M2M) and Internet of Things namely the integration of different computer systems, networks, hardware and software. Designing and developing wireless networks, apparatus, hardware and software; engineering services in the field of wireless networks, apparatus, hardware and software, machine-to-machine (M2M) communication and the Internet of Things; designing and developing data intelligence software solutions for the purpose of data management, analysis, interpretation, identification and reporting in order to enable decision-making and adoption of measures for networked apparatus and Internet of Things systems; software as a service (SaaS) services with software that enables users to configure, monitor and configure machine-to-machine (M2M) systems and the Internet of Things, and to manage apparatus, firmware, integrated applications and airtime subscriptions via global networks; software as a service (SaaS) services with a software platform that collects and transmits data from apparatus, objects, connected information systems and sources and integrates the data with enterprise software, web and mobile applications.
6.
Semiconductor Device and Method of Forming Substrate with 3-Sided Wettable Flank
A semiconductor device has a substrate and leads formed on two or more sides of the substrate. An electrical component is disposed over the substrate and electrically connected to the lead with bumps or bond wires. The electrical component is encapsulated. A portion of the substrate is removed to form a wettable flank on at least three sides of the lead. The substrate has a molding compound and the lead is disposed within or adjacent to the molding compound. A portion of the molding compound can remain at corners of the substrate. The lead has a first surface or recessed surface on a first side of the lead, a second surface or recessed surface on a second side of the lead, and a third surface or recessed surface on a third side of the lead. A portion of a surface of the lead is plated.
Environmental sensor circuit for a portable connected wireless device. The circuit includes a capacitive proximity sensor that determines when a user is close to the portable device. The device also has a magnetic field probe that provides a signal that indicates the position of a permanent magnet. The sensor circuit integrates both a digitizing unit and digital signal processing for the suppression of noise and drive in signals coming from the proximity sensor and from the magnetic field probe.
H03K 17/955 - Proximity switches using a capacitive detector
G01B 7/14 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
H03K 17/95 - Proximity switches using a magnetic detector
This application relates to a travelling wave electro-optic modulator die comprising a signal carrying structure and a shielding structure. The signal carrying structure is configured to provide an electric field to modulate an optical path length of an optical waveguide. The shielding structure comprises a first shielding electrode and a second shielding electrode located on opposing sides of the signal carrying structure and at least one connecting portion electrically coupled to the first shielding electrode and the second shielding electrode.
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
9.
Systems and Methods for Fast Burst Data Link Acquisition
A system may include a recovery circuit that may: receive a first detect signal for a first burst signal and a second detect signal for a second burst signal in a burst mode data path; receive a reference pattern signal from a continuous mode data path; generate a first lock signal locked to the first burst signal or locked to the reference pattern signal, and a second lock signal locked to the second burst signal; and output the reference pattern signal from the recovery circuit during a guard period. The frequency of the recovery circuit may be locked to the frequency of the reference pattern signal during the guard period. The guard period may start based on when the first detect signal de-asserts or when the first lock signal de-asserts. During the guard period, the recovery circuit does not output the first burst signal or the second burst signal.
This application relates to transimpedance amplifiers (TIAs), in particular to TIAs with wideband feedback. The TIA has an input stage, for receiving an input current and outputting a corresponding output voltage, with a first transistor configured as an input transistor in a first circuit branch. A reference controller is configured to provide a reference voltage with a value equal to a DC value of the output voltage and a voltage regulator is configured to receive a supply voltage and generate a regulated voltage with a voltage offset to the reference voltage, such that the voltage offset does not substantially vary with variation in at least one of the supply voltage, temperature and process variations. The regulated voltage is supplied as a supply voltage to the input stage. The TIA also includes control circuitry for controlling an effective transconductance of the first transistor to a defined value.
There is provided a method and apparatus for managing device-to-device communications in a wireless network, for example a self-organizing network. The method includes collecting, by a wireless network controller, information regarding one or more key performance indicators (KPIs). The information relates to one or more of a 5 ranking of the one or more KPIs and a target value of the one or more KPIs. The method further includes determining, by the wireless network controller, an optimal configuration of the wireless network that best meets the collected information relating to the one or more KPIs. The method additionally includes assigning, by the wireless network controller, a role to each of one or more network devices associated with the 10 wireless network based on the optimal configuration of the wireless network. The role is selected from a gateway (GW), a mesh node, a cellular node and an end node (EN).
The invention relates to an input circuit (9) for a wireless power receiver (10), the input circuit (9) comprises:
an active rectifier (5) configured with output nodes;
a voltage regulator (7) connected to the output nodes, wherein the active rectifier (5) is configurated to output a DC voltage (VDC) at the output nodes, wherein the voltage regulator (7) is arranged to actively affect the said DC voltage (VDC);
a control structure adapted to control the DC voltage (VDC), wherein the control structure comprises a first control loop operatively coupled to the voltage regulator (7) and configured to control a voltage regulation operation of the voltage regulator (7), and a second control loop operatively coupled to the active rectifier (5) and configured to control a rectifier operation of the active rectifier (5), operates with a faster response time (more than two order of magnitude faster) than the second control loop, and wherein the first control loop is operably engaged with the second control loop.
The invention relates to an input circuit (9) for a wireless power receiver (10), the input circuit (9) comprises:
an active rectifier (5) configured with output nodes;
a voltage regulator (7) connected to the output nodes, wherein the active rectifier (5) is configurated to output a DC voltage (VDC) at the output nodes, wherein the voltage regulator (7) is arranged to actively affect the said DC voltage (VDC);
a control structure adapted to control the DC voltage (VDC), wherein the control structure comprises a first control loop operatively coupled to the voltage regulator (7) and configured to control a voltage regulation operation of the voltage regulator (7), and a second control loop operatively coupled to the active rectifier (5) and configured to control a rectifier operation of the active rectifier (5), operates with a faster response time (more than two order of magnitude faster) than the second control loop, and wherein the first control loop is operably engaged with the second control loop.
The invention also relates to a wireless power receiver (10) and a method for operating the wireless power receiver (10).
This application describes apparatus and method for transimpedance gain control. A transimpedance amplifier circuit is described with a transimpedance amplifier having an input node for receiving an input current. A variable shunt resistance is connected to the input node and a controller is operable to controllably vary an open-loop transimpedance gain of the transimpedance amplifier and also the resistance of the variable shunt resistance so as to vary a closed-loop transimpedance gain of the transimpedance amplifier.
A decision feedback equalizer (DFE) may include a summer configured to receive a signal stream, and a plurality of feedback taps including a first feedback tap connected to the summer. The first feedback tap may include a pre-amplifier, a combined latch and a digital to analog converter (DAC). The pre-amplifier may be configured to be clocked by a first clock signal, wherein the pre-amplifier may be configured to receive an output signal of the summer and to receive a first postcursor generated by the DFE of a previous signal in the signal stream. The combined latch may be configured to be clocked by a first clock signal and a second clock signal. The DAC may be coupled to an output node of the combined latch. The first postcursor may be provided to the pre-amplifier without being provided to the summer.
There is provided a method and apparatus for reducing latency for device-to-device communications in a wireless network, for example a cellular mesh (CeMe) network. In accordance with embodiments, there is provided a method for reducing latency for a D2D communication link in the wireless network. The method includes stopping, by a wireless device, data for cellular communications and transitioning, by the wireless device, to a cellular connected mode discontinuous reception (C-DRX) or a cellular idle mode. The method further includes performing, by the wireless device, D2D communication during an off time associated with the cellular C-DRX or the cellular idle mode.
The invention relates to a single-inductor multiple-output (SIMO) DC-DC converter (1), comprising:
an electrical DC voltage source (Vs) switchable connected to an input node (ni) through an input switch (S1, S2);
a plurality of loads (Ro1, Ro2, RoN) each being switchable connected to an output node (no) through one output switch (So1, So2, SoN) of a plurality of output switches (So1, So2, SoN), wherein the electrical DC voltage source (Vs) and the loads (Ro1, Ro2, RoN) are external to the SIMO DC-DC converter (1);
an inductor (L) connected to the input node (ni) and the output node (no) and being configured to buffer energy;
a control structure arranged to operate in consecutive cycles and being configured to generate control signals for the input switch (S1, S2) and the output switches (So1, So2, SoN), wherein the inductor (L) being energized and de-energized in one cycle of operation (Tcycle) for supplying the plurality of loads (Ro1, Ro2, RoN) with a set of currents (Iact) within the said cycle of operation (Tcycle), wherein the control structure being configured to section the cycle of operation (Tcycle) into a plurality of consecutive time segments (tup, tdown) with a duration, wherein in one time segment (tup) the inductor (L) being energized, wherein the duration of the one time segment (tup) being determined by the control structure prior to a start of the cycle of operation (Tcycle), based on a sum of the set of currents (Iact) suppliable to the plurality of loads (Ro1, Ro2, RoN).
The invention relates to a single-inductor multiple-output (SIMO) DC-DC converter (1), comprising:
an electrical DC voltage source (Vs) switchable connected to an input node (ni) through an input switch (S1, S2);
a plurality of loads (Ro1, Ro2, RoN) each being switchable connected to an output node (no) through one output switch (So1, So2, SoN) of a plurality of output switches (So1, So2, SoN), wherein the electrical DC voltage source (Vs) and the loads (Ro1, Ro2, RoN) are external to the SIMO DC-DC converter (1);
an inductor (L) connected to the input node (ni) and the output node (no) and being configured to buffer energy;
a control structure arranged to operate in consecutive cycles and being configured to generate control signals for the input switch (S1, S2) and the output switches (So1, So2, SoN), wherein the inductor (L) being energized and de-energized in one cycle of operation (Tcycle) for supplying the plurality of loads (Ro1, Ro2, RoN) with a set of currents (Iact) within the said cycle of operation (Tcycle), wherein the control structure being configured to section the cycle of operation (Tcycle) into a plurality of consecutive time segments (tup, tdown) with a duration, wherein in one time segment (tup) the inductor (L) being energized, wherein the duration of the one time segment (tup) being determined by the control structure prior to a start of the cycle of operation (Tcycle), based on a sum of the set of currents (Iact) suppliable to the plurality of loads (Ro1, Ro2, RoN).
The invention also relates to a method for operating a SIMO DC-DC converter (1).
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
18.
VARIABLE TRANSIMPEDANCE AMPLIFIER FOR LOW POWER, HIGH DYNAMIC RANGE, HIGH DATA RATE LINEAR APPLICATIONS
A variable transimpedance amplifier may include first and second amplifiers. Each of the first and second amplifiers may include a transistor amplifier with a feedback resistor and a capacitor. The output node of the first amplifier may be an output node of the variable transimpedance amplifier. The output node of the second amplifier is not part of the output node of the variable transimpedance amplifier. The open loop gains of the transistor amplifiers may be variable, but the feedback resistor values can be fixed. The transimpedance may be determined by the feedback resistors and a scaling factor proportional to ratio of open loop gains. The transistor amplifiers may share an input transistor. The configuration can provide a high dynamic range of variable transimpedance that is stable over process and operating condition variations, minimize input capacitance loading and noise contribution to small input signals.
After transmitting first electrical signals to a receiver, a transmitter receives a burst absent mode signal from the receiver. While in a ready state, the transmitter receives a signal including a data burst, converts the signal to second electrical signals, including a settled DC offset, and transmits the second electrical signals to the receiver. The receiver transmits the burst absent mode signal to the transmitter after receiving the first electrical signals, detects a presence of the second electrical signals. In response to detecting the presence of the second electrical signals, the receiver removes the DC offset from the second electrical signals to generate output signals, and causes transmitting the output signals to a subsequent device. The receiver removes the DC offset by causing an instruction to discharge AC coupling capacitors. The burst absent mode signal is generated using a host reset instruction or an internally generated instruction.
There is provided a method and apparatus for determining frequency offset between a serving base station and a user equipment. The method includes determining a position and velocity vectors of the serving base station based at least in part on broadcast information from the serving base station. The method further includes performing measurements during one or more communication time gaps with a base station, the measurements at least in part based on one or more downlink broadcast signals. The method further includes determining an estimated position of the user equipment based at least in part on the measurements and determining a frequency off-set based on the position and velocity vectors of the serving base station and the estimated position of the user equipment.
G01S 5/00 - Position-fixing by co-ordinating two or more direction or position-line determinationsPosition-fixing by co-ordinating two or more distance determinations
G01S 5/08 - Position of single direction-finder fixed by determining direction of a plurality of spaced sources of known location
H04W 4/02 - Services making use of location information
H04W 64/00 - Locating users or terminals for network management purposes, e.g. mobility management
G01S 5/02 - Position-fixing by co-ordinating two or more direction or position-line determinationsPosition-fixing by co-ordinating two or more distance determinations using radio waves
G01S 5/14 - Determining absolute distances from a plurality of spaced points of known location
A signal driver may include a variable termination resistor and a signal transmission line. The variable termination resistor may include one or more variable termination resistor units. Each of the one or more variable termination resistor units may include a switch connected to a first end node of the variable termination resistor; a T-coil connected to the switch; a first resistor connected to the first end node of the variable termination resistor and to the T-coil; and a second resistor connected to a second end node of the variable termination resistor and to the T-coil. The signal transmission line may be connected to the second end node of the variable termination resistor.
A signal driver may include a plurality of distributed drivers along a differential transmission line. Each of the plurality of the distributed drivers may include: an output tap configured to receive a portion of an incoming signal of the signal driver; and a T-coil connected to an output node of the output tap. The differential transmission line is connected to and intercepted by a first terminal and a second terminal of the T-coil, and a plurality of T-coils of the plurality of the distributed drivers are distributed along and spaced apart on the differential transmission line.
A differential signal driver may include a driver circuit and a feedback loop. The driver circuit may include a first output node coupled to a first termination node for receiving a first termination bias voltage, a second output node coupled to a second termination node for receiving a second termination bias voltage, and a bias network connected to the second output node and to the second termination node. The feedback loop may include a first feedback resistor connected to the first output node at a first end of the first feedback resistor, a second feedback resistor connected to the second output node at a first end of the second feedback resistor, and a feedback amplifier configured to provide a feedback correction current from a common mode voltage to a node within the line from the first output node to the first termination node.
A packaged optical receiver, comprising: a photodiode configured to receive an optical signal; a transimpedance amplifier (TIA) coupled to the photodiode; and a signal pin; wherein the optical receiver is configured to receive, via the signal pin, a reset signal; and wherein the optical receiver is configured to output in response to the reset signal, via the signal pin, a received signal strength indication (RSSI) for the received optical signal.
A compound semiconductor integrated circuit is disclosed, which includes biasing circuitry for generating a bias voltage at a bias output node. The biasing circuitry comprises a first circuit branch configured to extend between a defined voltage and a supply voltage. The first circuit branch includes a first transistor configured as a current source to generate a defined current in the first circuit branch and a controllably variable resistance. The bias output node is coupled to the first circuit branch at a first node which is between the controllably variable resistance and the first transistor. The biasing circuitry is operable so that the resistance value of the controllably variable resistance varies with a control voltage so as to vary the value of the bias voltage.
G05F 3/24 - Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode-transistor combinations wherein the transistors are of the field-effect type only
G05F 3/20 - Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode-transistor combinations
Amplifier circuitry is disclosed for receiving a differential signal and outputting a single-ended output signal. A travelling wave amplifier has a plurality of amplifier elements connected between an input transmission line and an output transmission line, each extending between first and second sides of the travelling wave amplifier. The input transmission line is configured to receive the first differential signal component at the first side and the output transmission line is configured to provide the single-ended output signal at the second side. A matched transmission line, which is configured to match at least some transmission properties of the input transmission line, receive the second differential signal component at the first end. A differential termination network is connected to both the input transmission line and matched and the matched transmission line and is configured to provide differential termination of signals received at the first and second termination inputs.
Amplifier circuitry is disclosed which has a travelling wave amplifier, with a plurality of amplifier elements connected between an input transmission line and an output transmission line, the transmission lines extending between first and second sides of the travelling wave amplifier. The input transmission line is configured to receive an input signal at the first side and the output transmission line is configured to output an output signal at the second side. The circuitry includes biasing circuitry for applying a DC bias to the output transmission line at at least one point upstream of a last amplifier element.
A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A capacitive proximity sensor with a stacked electrode structure where an inner electrode is partially screened by an upper one. The self-capacitances of selected electrodes is measured while other electrodes are held to ground or to a shield potential. In this manner, the proximity sensor estimates a value of the dielectric permittivity of the approaching body.
G01D 5/24 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
G01B 7/14 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
31.
Transmitter, receiver, and method for chirp-modulated radio signals
A LoRa transmitter and corresponding receiver where the detection sequence in the preamble is phase-modulated and includes an information that encodes the position in the preamble, such as a countdown index. Nodes that wake up to receive a scheduled download can determine from this information how far the end of the detection sequence is and manage their energy consumption accordingly. The phase modulation is compatible with legacy devices.
The present invention relates to a capacitive sensor device comprising a capacitance-measuring circuit, a main sense input and a reference sense input, wherein the capacitive sensor device is configured to measure, using the capacitance-measuring circuit, a current main value of capacitance seen by the main sense input and a current reference value of capacitance seen by the reference sense input, wherein the capacitive sensor device is configured to at least temporarily store at least one previously measured reference value, and wherein the capacitive sensor device is configured to use 1) the current main value, 2) the current reference value and the at least one previously measured reference value, and 3) at least one current correction coefficient, with the capacitive sensor device being configured to adaptively determine the at least one current correction coefficient based on at least the current reference value and the at least one previously measured reference value, for determining a corrected current main value of capacitance. The present invention further relates to a portable electronic device comprising the capacitive sensor device.
H03K 17/955 - Proximity switches using a capacitive detector
G01D 5/24 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
33.
Drift suppression method, proximity sensor and wireless device
A portable device including a capacitive proximity sensor can suppress a drift superimposed to the capacitive proximity signal and the corresponding method. A processor generates a baseline value by integrating a series of values that are derived from the slope of the proximity signal, when the slope is within stated limits, or a fixed value outside of the stated limits.
G01D 5/24 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
34.
Method and apparatus for managing device to device communication
A methods and apparatuses for supporting device-to-device (D2D) communication in a wireless network is provided. According to embodiments, during a period where a D2D device 1 (D1) and a D2D device 2 (D2) are available for active D2D communications therebetween and when D2 identifies a need for a second communication with at least one of a base station or a different D2D device, the method includes transmitting, by D2, a D2D communication not available message (DNAM) to D1. The DNAM indicates that one or both of D1 and D2 are unavailable for active D2D communications therebetween. Upon receipt of the DNAM by D1, the method further includes transitioning, by D1, to a listening mode for receiving at least a D2D communication available message (DAM) from D2. The DAM indicates that D1 and D2 are available for active D2D communications therebetween.
A capacitive sensor with a plurality of sense inputs connectable to capacitive sense electrodes and a common reference input, each sense input and the reference input can be put in a measure state, in a ground state, or in a shield state. The sensor can be equipped with external reference capacitors between each of the sense input and the common reference terminal. The reference capacitor can be read individually by selectively pulling one of the input terminals to ground and driving the other to be equipotential with the reference input.
A method of characterizing a LoRa modulated signal or any such signals with a plurality of chirps as symbols. It foresees sampling and storing the signal, determining a phase of at least one chirp in the signal, and determining a timing error and/or a frequency error based on the phase, The timing error is extracted by the height of a discontinuous step in the phase at the position of the cyclical shift, while the frequency error is obtained by the slope of the phase. The method can be applied to a dedicated receiver for the characterization of LoRa transmitters.
A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
This application relates to transimpedance amplifier (TIA) apparatus, in particular to a TIA apparatus suitable for receiving data using burst mode communication. The apparatus has a transimpedance amplifier configured to generate a first voltage based on a current at an input node for an input signal. A controlled voltage source, such as a dummy TIA, generates a second voltage based on a first control current. A controller is configured to collectively control the first control current and a second control current based on an indication of input signal magnitude. The first control current controls the second voltage which may be used as a slicing level. The second control current is subtracted from the current at the input node and can provide a DC restore current.
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
H03G 3/30 - Automatic control in amplifiers having semiconductor devices
A transimpedance amplifier (TIA) for converting an input current at an input node into an output voltage at an output node, the TIA comprising: a first amplifier stage having a first input coupled to the input node and a first output; a feedback path between the first output and the first input; a second amplifier stage in the feedback path having a second input, the second input coupled to the first output of the first amplifier stage; a feedback resistor in the feedback path coupled between an output of the second amplifier stage and first input of the first amplifier stage; and an output stage, comprising: a load resistor coupled between a reference voltage node and a T-coil, the T-coil comprising first and second inductors coupled in series at an inductor node, the T-coil coupled between the first output and the load resistor, the inductor node coupled to the output node of the TIA.
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
A proximity sensor for a portable wireless connected device, the sensor being arranged to determine whether a part of a user's body is near the portable connected wireless device. The sensor generates a time-averaged proximity that is alerted when the device is brought near a part of a user's body for a given time and may be periodically reset momentarily during the periods of proximity. An integration time comparable with that used in SAR testing, enables the sensor to reduce the radio power emitted by a portable device when it is near the body. The integration time can be obtained by a sigma/delta modulator configured as rate-compression unit.
H03K 17/955 - Proximity switches using a capacitive detector
G01D 5/24 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
H04W 4/40 - Services specially adapted for particular environments, situations or purposes for vehicles, e.g. vehicle-to-pedestrians [V2P]
41.
Semiconductor device and method of forming substrate with 3-sided wettable flank
A semiconductor device has a substrate and leads formed on two or more sides of the substrate. An electrical component is disposed over the substrate and electrically connected to the lead with bumps or bond wires. The electrical component is encapsulated. A portion of the substrate is removed to form a wettable flank on at least three sides of the lead. The substrate has a molding compound and the lead is disposed within or adjacent to the molding compound. A portion of the molding compound can remain at corners of the substrate. The lead has a first surface or recessed surface on a first side of the lead, a second surface or recessed surface on a second side of the lead, and a third surface or recessed surface on a third side of the lead. A portion of a surface of the lead is plated.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
The invention relates to a Global Navigation Satellite System (GNSS) receiver, comprising 1) a radiofrequency (RF) front-end configured to acquire GNSS signals emitted by a plurality of GNSS satellites in at least two snapshot time windows, wherein each emitted GNSS signal comprises a respective known spreading code identifying the emitting GNSS satellite, and wherein the RF front-end is configured to transform the acquired GNSS signals in each of the at least two snapshot time windows into a digital sequence, respectively, and 2) a receiver unit configured to determine for each snapshot time window pseudo-ranges from the GNSS receiver to at least a subset of the emitting GNSS satellites, respectively, wherein said at least two subsets corresponding to the at least two snapshot time windows may differ from one another, and wherein said pseudo-ranges are determined using (i) the known spreading codes and (ii) the at least two digital sequences. The GNSS receiver is configured to determine composite pseudo-ranges between the GNSS receiver and a composite subset of the emitting GNSS satellites at composite receive times, using at least the determined pseudo-ranges corresponding to the at least two snapshot time windows. The invention also relates to an assembly comprising a GNSS receiver, a gateway and a computing unit. The invention also relates to a method for determining a position of a GNSS receiver.
Environmental sensor circuit for a portable connected wireless device. The circuit includes a capacitive proximity sensor that determines when a user is close to the portable device. The device also has a magnetic field probe that provides a signal that indicates the position of a permanent magnet. The sensor circuit integrates both a digitizing unit and digital signal processing for the suppression of noise and drive in signals coming from the proximity sensor and from the magnetic field probe.
G01B 7/14 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
H03K 17/95 - Proximity switches using a magnetic detector
H03K 17/955 - Proximity switches using a capacitive detector
The invention relates to an electronic component for adapting a pre-set matched impedance for an antenna. The electronic component comprises 1) a capacitance measurement circuit for measuring capacitance of a sensor, wherein the measured capacitance is indicative of a use case of the antenna, 2) a Radio Frequency (RF) switch configured for electrically connecting at least one selected impedance to an RF output, wherein the at least one selected impedance is an impedance in a group of impedances having at least two elements, wherein the RF switch is capable of providing an electrical connection between any impedance in the group of impedances and the RF output, and wherein the at least one selected impedance is configured for adapting the pre-set matched impedance, and 3) a digital processor having access to at least one threshold and the measured capacitance. The digital processor is configured (i) to compare the measured capacitance of the sensor provided by the capacitance measurement circuit to the at least one threshold, (ii) to determine, based on the comparison, which impedance in the group of impedances is the at least one selected impedance, and (iii) to instruct the RF switch to provide an electrical connection between the at least one selected impedance and the RF output. The invention also relates to a method for adapting a pre-set matched impedance for an antenna.
A radio transmitting device configured to transmit a spread-spectrum radio signal wherein a carrier frequency changes in a predetermined set of radio channels according to a hopping sequence, the radio signal being organized in packets having each a header transmitted at a first channel in the hopping sequence comprising a detection sequence, and payload data encoding a message transmitted at following channels in the hopping sequence.
There is provided a method and user equipment for a user equipment (UE) to perform device to device communication, for example sidelink communication. The method includes identifying, by a user equipment (UE), a time opportunity for the sidelink communication. The method further includes upon determination of a need for the sidelink communication, activating, by the UE, the sidelink communication during the time opportunity. In some embodiments, the method further includes the UE transmitting a sidelink availability message. In some embodiments, the time opportunity is at least in part dependent on the mode of operation of the UE.
A capacitive sensor with a plurality of sense inputs connectable to capacitive sense electrodes and a common reference input, each sense input and the reference input can be put in a measure state, in a ground state, or in a shield state. The sensor can be equipped with external reference capacitors between each of the sense input and the common reference terminal. The reference capacitor can be read individually by selectively pulling one of the input terminals to ground and driving the other to be equipotential with the reference input.
Methods and apparatuses related to a two-step RACH procedure are provided. Channel conditions can be estimated based on a UE PRACH transmission rather than the subsequent PUSCH transmission in the first part of the two-step RACH. A variable length gap can be provided between the PRACH preamble transmission and the PUSCH transmission. Other solutions are also provided.
There are provided methods for predicting timing advance (TA) with respect to a base station. According to some embodiments, the method includes determining, by a user equipment (UE), a set of TAs, each TA corresponding to a particular distance from the base station and measuring, by the UE, a set of instances of a power metric, each instance of the power metric associated with a respective distance from the base station. The method further includes determining, by the UE, a set of differences between each of the instances of the power metric and determining, by the UE, a new TA at least in part using the set of TAs and the set of differences.
A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
51.
TVS diode circuit with high energy dissipation and linear capacitance
A TVS circuit having a first diode with a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a second node and a cathode coupled to a third node. A third diode is coupled between the first node and second node. A fourth diode is coupled between the first node and third node. A fifth diode is coupled between the second node and a second terminal. A sixth diode is coupled between the second terminal and the third node. A seventh diode can be coupled between the second terminal and an intermediate node between the fifth diode and sixth diode. The first diode is disposed on a first semiconductor die, while the second diode is disposed on a second semiconductor die. Alternatively, the first diode and second diode are disposed on a single semiconductor die.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
G05F 3/18 - Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H02H 3/20 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
52.
METHOD AND APPARATUS FOR SUPPORTING DEVICE TO DEVICE COMMUNICATION
There is provided a method and apparatus for supporting device to device communication between a source device and a destination device. The method includes transmitting, by the SRC device, one or more of reference signals, data information and control information (CI) in sub-frames (SFs) between two consecutive special SFs in a time division duplex (TDD) pattern. The method further includes receiving, by the SRC device, one or more of other reference signals, other data information and other CI in other SFs between other two consecutive special SFs in the TDD pattern. The method further includes switching, by the SRC device, operations between downlink (DL) and uplink (UL) in the one of the two consecutive special SFs or one of the other two consecutive special SFs. In the method, each frame of the TDD pattern includes at least two special SFs.
A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
54.
METHOD AND APPARATUS FOR INITIAL ACCESS FOR REDUCED CAPABILITY DEVICES
There is provided a method and apparatus for a method for initial access of a reduced capability (RedCap) device to a wireless network. The method includes receiving broadcast access permission information and determining an access permission status based on one or more characteristics of the RedCap device and the broadcast access permission information. The method further includes receiving, by the RedCap device, broadcast capability indication configuration information and determining a capability indication configuration based on the broadcast capability indication configuration information. The capability indication configuration is indicative of one or more messages to use for transmission of one or more capabilities of the RedCap device. The method further includes upon determination the access permission status indicates that the RedCap device is permitted to access to the wireless network, transmitting the one or more capabilities of the RedCap device via the one or more messages.
There is provided methods and apparatuses for wireless communication with phase continuity. According to embodiments, a receiving device (e.g. a base transceiver station (BTS), next generation NodeB (gNodeB or gNB)) sends, to a transmitting device (e.g. user equipment (UE)), a request for transmitting data across multiple slots with phase continuity. The transmitting device transmits to the receiving device the data across multiple slots, wherein the transmitting device maintains phase continuity while the data is transmitted. In some embodiments, the receiving device is provided with capability information indicative of whether the transmitting device supports phase continuity during data transmission. In some embodiments, the receiving device determines if the transmitting device has the capability for supporting phase continuity during data transmission. In some embodiments, the receiving device notifies the transmitting device of time duration that the receiving device expects the phase to be continuous.
09 - Scientific and electric apparatus and instruments
Goods & Services
Electronic integrated circuits; electronic integrated
circuits (ICs) used to prevent system failures caused by
electrostatic discharge, electrical fast transient, cable
discharge, lightning, inductive switching, and high inrush
currents for load and power distribution.
An extension of the LoRa modulation with an improved ranging mode. A master and a slave device exchange a request and a reply that contain sequences of chirps that are carefully aligned in time, frequency, and preferably also phase, such that the master device can ascertain the propagation delay to the slave by demodulating the reply. Request and reply include chirps having different slopes, preferably slopes of equal absolute value and opposite sign. The slope diversity permits an unbiased estimation of the Doppler shift.
G01S 13/84 - Systems using reradiation of radio waves, e.g. secondary radar systemsAnalogous systems wherein continuous-type signals are transmitted for distance determination by phase measurement
58.
Method and device for improved accuracy of proximity and touch detection in mobile devices
A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.
There is provided a method and user equipment (UE) for supporting device to device (D2D) communication, for example side link communication, of wireless devices. At least one of the source UE or the destination UE is out of synchronization. Side link (SL) communication information (e.g. SL sync signal, SL timing request message, SL-data, special sync signal) may be blindly and repeatedly transmitted until the source UE receives a response from the destination UE.
This application relates to determining transmission quality of a communication channel, in particular for determining a measure of errors in data transmitted as multi-bit symbols. Described is an error checker with an input for receiving an input signal comprising a series of modulated symbols, wherein each symbol encodes multiple bits of a pseudo-random bit sequence. A demodulator is configured to receive the input signal and only partially demodulate at least some of the symbols to generate a partially demodulated bit sequence. A PRBS module is configured to receive the partially demodulated bit sequence and determine the pseudo-random bit sequence and a comparator compares the output of the demodulator to an expected output based on the pseudo-random bit sequence determined by the PRBS module.
H03M 13/37 - Decoding methods or techniques, not specific to the particular type of coding provided for in groups
H03M 13/00 - Coding, decoding or code conversion, for error detection or error correctionCoding theory basic assumptionsCoding boundsError probability evaluation methodsChannel modelsSimulation or testing of codes
Circuitry for testing an integrated capacitor that includes a first capacitor, a supply node for connecting to a voltage supply, a test node for connecting to the integrated capacitor, and a charge monitoring circuit. The circuitry is operable in a sequence of states including a first state in which the first capacitor is connected to the supply node and is disconnected from the test node so as to charge the first capacitor to a test voltage and a second state in which the first capacitor is disconnected from the supply node and is connected to the test node to apply the test voltage to the integrated capacitor. The charge monitoring circuit is configured to monitor a charge transfer from the first capacitor to the integrated capacitor in said second state and to generate a measurement value based on an amount of the charge transfer.
G01R 31/12 - Testing dielectric strength or breakdown voltage
G01R 31/27 - Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects due to surrounding elements
There is provided a method and apparatus for management of internet protocol (IP) flow records in a wireless communication network. The method and apparatus can provide for the compression and aggregation of the IP flow records for subsequent transmission, thereby reducing bandwidth necessary for transmission thereof.
H04L 61/4511 - Network directoriesName-to-address mapping using standardised directoriesNetwork directoriesName-to-address mapping using standardised directory access protocols using domain name system [DNS]
A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
a) when the first digital gate signal has a second value; characterized in that the first digital gate signal (ϕ1) comprises a periodic series of pulses, wherein the pulses have widths proportional to the filter coefficients.
There is provided methods and associated base station and user equipment, for facilitating transmissions in a wireless communication system. The mapping between an index and its corresponding HARQ ID or HARQ ID & NDI pair can be done using one or more equations relating the two entities. The equations can be defined in two configurations, one for encoding HARQ ID or HARQ ID & NDI pair and a second for decoding the encoded HARQ ID or HARQ ID & NDI pair to determine the HARQ ID or HARQ ID and NDI.
H04L 1/18 - Automatic repetition systems, e.g. Van Duuren systems
H04L 1/16 - Arrangements for detecting or preventing errors in the information received by using return channel in which the return channel carries supervisory signals, e.g. repetition request signals
09 - Scientific and electric apparatus and instruments
Goods & Services
Electronic integrated circuits; Electronic integrated circuits (ICs) used to prevent system failures caused by electrostatic discharge, electrical fast transient, cable discharge, lightning, inductive switching, and high inrush currents for load and power distribution
09 - Scientific and electric apparatus and instruments
Goods & Services
Integrated circuits; electronic circuits; semiconductor
chips; integrated circuit chips; integrated circuit platform
for low power data center applications.
Transmitter for chirp-modulated radio signals comprising a chirp generator configured to generate a series of chirp signals, wherein each chirp carries an element of information encoded as a cyclic shift, and has a phase encoding an error correction code dependent form the cyclic shift of the chirp, the transmitter further comprising a modulator configured to modulate the series of chirp onto a radio signal and a radio transmitter, transmitting the radio signal. receiver for chirp-modulated radio signals, comprising a clock unit and a demodulator configured for demodulating a series of received chirps signal, the demodulator having a dechirp unit, configured for determining a cyclic shift of each received chirp relative to a base chirp and an error correction code based on a phase of the received chirp, the receiver having a synchronism correction unit configured to detect and/or correct an error in the clock unit based on the error correction code.
The application describes a transimpedance amplifier circuit having a first circuit branch extending between first and second supply nodes. An input NMOS transistor is located in the first circuit branch, with its drain terminal coupled to the first supply node via a load resistor, its source terminal coupled to the second supply node and its gate terminal coupled to an input node for receiving an input signal. The circuit includes a PMOS transistor having its source terminal coupled to a third supply node, its drain terminal coupled to the first circuit branch, at a node in a part of the first circuit branch extending from the drain terminal of the input transistor to the load resistor, and its gate terminal coupled to the input node. A drain current of the PMOS transistor contributes a proportion but not all of a drain current for input NMOS transistor.
A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.
H10D 89/60 - Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
A method and apparatus for supporting multi transport block grant (MTBG) data transmission in a wireless communication system, such as an LTE system. The method includes increasing the number of hybrid automatic repeat request (HARQ) processes in a HARQ cycle to greater than 8, where the HARQ processes are divided into two or more HARQ process groups. The method further includes specifying a delay indicative of time between the MTBG and commence of the data transmission and another delay indicative of time between the data transmission and acknowledgement (ACK).
A proximity sensor for a portable connected wireless device generating an immediate proximity status signal (PROXSTAT, 310) that becomes active when a part of a user's body is close to the proximity sensor, an averaging unit (259) that may include a FIFO buffer, averaging the immediate proximity status flag in a predetermined time window, and a decision unit generating a time-averaged proximity status flag (350) based on an averaged value of the immediate proximity status flag in the time window, for example when the averaged value exceeds a predetermined threshold. In embodiments, the sensor is configured to switch temporarily and repeatedly the time-averaged proximity status flag to an inactive state when the value of the averaged or accumulated value yields an active state of the time-averaged proximity status flag. This feature improves the connectivity when the sensor is used to limit the RF emission of mobile devices.
H04M 1/72454 - User interfaces specially adapted for cordless or mobile telephones with means for adapting the functionality of the device according to specific conditions according to context-related or environment-related conditions
G06F 3/0488 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures
76.
TVS diode circuit with high energy dissipation and linear capacitance
A TVS circuit having a first diode with a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a second node and a cathode coupled to a third node. A third diode is coupled between the first node and second node. A fourth diode is coupled between the first node and third node. A fifth diode is coupled between the second node and a second terminal. A sixth diode is coupled between the second terminal and the third node. A seventh diode can be coupled between the second terminal and an intermediate node between the fifth diode and sixth diode. The first diode is disposed on a first semiconductor die, while the second diode is disposed on a second semiconductor die. Alternatively, the first diode and second diode are disposed on a single semiconductor die.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
G05F 3/18 - Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H02H 3/20 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
Advanced modulation and demodulation schemes for LoRa or equivalent chirp spread spectrum transmissions, with differential modulation and symbol repetition improve the sensitivity in combination with soft demodulation methods.
A LoRa receiver for processing digital chirp spread-spectrum modulated signals with an advanced module for the determination of the timing error and/or of the frequency error arranged to estimate a position of a frequency discontinuity in each symbol, extract one or more frequency-continuous fragments out of each symbol, dechirp the coherent fragments, determine a timing error, and/or a frequency error, and/or a modulation value, and/or a SNR.
a has electrical interconnect for the semiconductor die. A molding compound is disposed over the semiconductor die and first substrate area using a transfer mold process, which leaves mold culls and mold gates disposed over the second substrate area. A substrate edge is formed in the second substrate area under the mold gates. The substrate edge extends into the first substrate area under the molding compound to reinforce the mold gates and reduce cracking during mold degating. The substrate edge can have a variety of forms such as parallel bars, diagonal bars, orthogonal bars, and combinations thereof.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Wireless power transmittal apparatus and systems are disclosed in which transmitter and receiver inductors, or coils, are coupled in configurations for wirelessly transferring power and/or data among them. In preferred implementations, a plurality of non-coplanar primary side coils are provided in power transmittal apparatus for transmitting power, or power and data.
H02J 50/10 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
H02J 50/80 - Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
H02J 7/02 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from AC mains by converters
H02J 50/40 - Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
A sensor for a portable connected device. The sensor has a filter arranged to reduce a noise component on a sampled input signal. The is arranged to consider only input measurements that change systematically in a same direction, updating an output value when all the input samples in a predetermined time window are above or below a current output value and, repeating the current output value when the input samples in the time window are below and above the current output value.
A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.
An integrated circuit has a CMOS signal path coupled for receiving a data signal. A compensation circuit is coupled to a power supply rail of the CMOS signal path for injecting a compensation current into the power supply rail. The compensation circuit can be a charge pump operating in response to the data signal to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a replica CMOS signal path to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a voltage regulator and current mirror including an input coupled to the voltage regulator. The replica CMOS signal path receives an operating potential from the voltage regulator. An output of the current mirror injects the compensation current into the power supply rail each transition of the data signal.
H03K 17/042 - Modifications for accelerating switching by feedback from the output circuit to the control circuit
H03K 17/56 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
G11C 11/4074 - Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/00 - Details of semiconductor or other solid state devices
87.
Method and apparatus for resource allocation for half duplex frequency division duplexing in a wireless communication system
A method and apparatus for resource allocation for half duplex frequency division duplexing in a wireless communication system is provided. Fixed or variable HARQ timing of greater than 5 subframes may be implemented. Acknowledgements for multiple downlink (uplink) transmissions can be bundled into a single acknowledgement transmitted on an uplink (downlink) control channel. Bundled acknowledgements for downlink transmissions may also be provided. Variable lead time cross subframe scheduling may be provided in which the number of subframes of delay between an uplink or downlink grant and the corresponding scheduled uplink or downlink transmission changes based on other scheduled events and/or half-duplex transceiver availability in the appropriate mode. The scheduling may select the earliest available subframe after a minimum delay. Uplink grant bundling may also be performed, in which multiple uplink grants are transmitted via a single grant indication.
A tag is provided that includes a battery having a printed anode and cathode. A printed circuit connection layer is formed in one of the anode or the cathode. A printed antenna is formed in one of the anode or the cathode. A low-power transmitter coupled to the circuit connection layer.
G06K 19/06 - Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
G06K 19/073 - Special arrangements for circuits, e.g. for protecting identification code in memory
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Telecommunication devices; electronic devices, namely, long range transceivers, semiconductors; high-tech devices, namely, wide area network hardware and software; long-range devices, namely, transmitters; transceivers; modems; computer communication equipment. Testing, analysis and evaluation of the goods and services of others for the purpose of certification.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Telecommunication devices; electronic devices, namely, long range transceivers, semiconductors; high-tech devices, namely, wide area network hardware and software; long-range devices, namely, transmitters; transceivers; modems; computer communication equipment. Testing, analysis and evaluation of the goods and services of others for the purpose of certification.
A signal detection circuit has a first differential amplifier including a first input coupled for receiving a data signal, and a second input coupled for receiving a threshold signal. A current steering circuit is coupled to an output of the first differential amplifier to establish a threshold for the first differential amplifier. A latch has an input coupled to the output of the first differential amplifier for latching a signal detect. A second amplifier has an input coupled to the output of the first differential amplifier and an output coupled to the input of the latch. A third amplifier has an input coupled to the output of the first differential amplifier and an output providing the data signal. The current steering circuit can be disabled which removes the need for the third amplifier as the data signal path is through second amplifier.
H04Q 11/00 - Selecting arrangements for multiplex systems
H04B 10/077 - Arrangements for monitoring or testing transmission systemsArrangements for fault measurement of transmission systems using an in-service signal using a supervisory or additional signal
A circuit detects a digital pattern with a first counter having an input receiving a digital pattern, and an output providing an output signal after detecting a first number of pulses during a first time period. A latch has an input coupled to the output of the first counter for latching the output signal of the first counter. A second counter has an input receiving the digital pattern, and an output providing an output signal after detecting a second number of pulses during a second time period. A logic gate has a first input coupled the output of the first counter, and a second input coupled to the output of the second counter, and an output coupled to the input of the latch. An amplitude detection circuit has an input coupled for receiving the digital pattern and an output coupled to the input of the first counter.
An integrated circuit has a CMOS signal path coupled for receiving a data signal. A compensation circuit is coupled to a power supply rail of the CMOS signal path for injecting a compensation current into the power supply rail. The compensation circuit can be a charge pump operating in response to the data signal to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a replica CMOS signal path to inject the compensation current into the power supply rail each transition of the data signal. The compensation circuit can be a voltage regulator and current mirror including an input coupled to the voltage regulator. The replica CMOS signal path receives an operating potential from the voltage regulator. An output of the current mirror injects the compensation current into the power supply rail each transition of the data signal.
H03K 17/042 - Modifications for accelerating switching by feedback from the output circuit to the control circuit
H03K 17/56 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
G11C 11/4074 - Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
A driver circuit has a plurality of transistors in a cascode arrangement. A passive biasing circuit is coupled to a gate terminal of a first transistor of the plurality of transistors. The passive biasing circuit has a first resistor coupled to a circuit node to provide a first biasing signal, a first capacitor coupled between the circuit node and a power supply conductor, a second resistor coupled between the circuit node and a drain terminal of the first transistor, and a third resistor coupled between the circuit node and a source terminal of the first transistor. A second transistor has a gate terminal coupled for receiving a data signal which controls an optical device.
A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
Methods and apparatuses related to a two-step RACH procedure are provided. Channel conditions can be estimated based on a UE PRACH transmission rather than the subsequent PUSCH transmission in the first part of the two-step RACH. A variable length gap can be provided between the PRACH preamble transmission and the PUSCH transmission. Other solutions are also provided.
A circuit controls a dynamic time constant to remove DC offset from a received optical data signal. The circuit has a first capacitor coupled between a first terminal and a second terminal. A first resistance network is coupled between the second terminal and a reference voltage. A control circuit has a first output coupled to a control input of the first resistance network. The control circuit monotonically increases an effective resistance of the first resistance network to increase the dynamic time constant. The first resistance network has a resistor coupled to the second terminal, and a transistor with a first conduction terminal coupled to the resistor, a second conduction terminal coupled to the reference voltage, and a control terminal coupled to the first output of the control circuit. The first capacitor has a variable capacitance. The monotonic increase in the dynamic time constant can be linear or non-linear.
A photodiode current comparison circuit has a first current source coupled to a circuit node configurable to operate in a first mode, a second current source coupled to the circuit node configurable to operate in a second mode opposite the first mode, and a third current source switchable to route a current to the circuit node in response to a data signal using a transistor coupled between the circuit node and the third current source. A photodiode is coupled to the circuit node. In a first configuration, an anode of the photodiode is coupled to the circuit node and a cathode of the photodiode is coupled to a power supply terminal. In a second configuration, a cathode of the photodiode is coupled to the circuit node and an anode of the photodiode is coupled to a power supply terminal. An amplifier provides an error signal of the photodiode.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/147 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01S 5/068 - Stabilisation of laser output parameters
There is provided a method and user equipment that enable the evaluation of the validity of a timing advance known to a UE for enabling the UE to transmit using preconfigured uplink resources (PUR). The method includes receiving data enabling determination of a measured change in a reference signal received power by a UE. The UE subsequently determines if the measured change in the RSRP is less than a positive change threshold. If the determination is true, the UE proceeds with the transmission using PUR. In some embodiments, prior to proceeding with the transmission, the UE further evaluates or determines if the measured change in the RSRP is greater than a negative change threshold. The UE will subsequently use PUR for the transmission only if the measured change in the RSRP is greater than a negative change threshold.
