Abstract

The disclosed technology relates to a light emitting device and a light emitting apparatus having the same. The disclosed technology relates to a light emitting device and a light emitting apparatus having the same. The disclosed technology discloses a light emitting apparatus 10 including a substrate 100 and a plurality of light emitting devices 200 disposed on the substrate 100, and at least one substrate common electrode 110 and a plurality of substrate individual electrodes 120 formed on the substrate 100, wherein N light emitting devices 2001˜200N (N is a natural number greater than or equal to 2) are commonly connected to the substrate common electrode 110 to form a light emitting group G.

IPC Classes  ?

• H10H 29/49 - Interconnections, e.g. wiring lines or terminals
• H10H 29/34 - Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels

Abstract

Disclosed is a light-emitting element comprising: a first window layer doped with a first conductive dopant; a second window layer doped with a second conductive dopant; and an active layer disposed between the first window layer and the second window layer so as to generate light, wherein the active layer comprises at least two quantum barrier layers, at least one quantum well layer, and a supporting layer disposed between the quantum well layer and the quantum barrier layers.

IPC Classes  ?

• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

The disclosed technology discloses a light emitting device, which includes a first window layer doped with a first conductivity type dopant, a second window layer doped with a second conductivity type dopant, and an active layer disposed between the first window layer and the second window layer to generate light, in which the active layer includes at least two quantum barrier layers, at least one quantum well layer, and an aid layer disposed between the quantum well layer and the quantum barrier layer.

IPC Classes  ?

• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

IPC Classes  ?

• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light emitting device including first, second, and third light emitting stacks each including first and second conductivity type semiconductor layers, a first lower contact electrode in ohmic contact with the first light emitting stack, and second and third lower contact electrodes respectively in ohmic contact with the second conductivity type semiconductor layers of the second and third light emitting stacks, in which the first lower contact electrode is disposed between the first and second light emitting stacks, the second and third lower contact electrodes are disposed between the second and third light emitting stacks, and the first, second, and third lower contact electrodes include transparent conductive oxide layers.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A lighting device including at least one first light source configured to emit a visible light through a first light emitting surface, at least one second light source spaced apart from the first light source and configured to emit light having a wavelength for sterilization through a second light emitting surface, and a housing having a bottom portion, on which the first and second light sources are disposed. The housing can include at least one sidewall portion connected to the bottom portion to enclose the first light source and the second light source in one common area, in which the first and second light emitting surfaces face substantially the same direction, and both the first light emitting surface and the second light emitting surface can be disposed at a different elevation from the bottom portion of the housing.

IPC Classes  ?

• A61L 2/10 - Ultraviolet radiation
• F21V 1/20 - Covers for framesFrameless shades characterised by the material the material being glass
• F21V 1/22 - Covers for framesFrameless shades characterised by the material the material being plastics
• F21V 14/02 - Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
• F21V 15/01 - Housings, e.g. material or assembling of housing parts
• F21V 23/04 - Arrangement of electric circuit elements in or on lighting devices the elements being switches
• F21V 33/00 - Structural combinations of lighting devices with other articles, not otherwise provided for
• F21Y 115/10 - Light-emitting diodes [LED]

Abstract

A light source module includes at least one substrate, at least one main light source and at least one auxiliary light source. The at least one main light source and the at least one auxiliary light source are disposed on the at least one substrate. The main light source comprises a first main light emitter configured to emit a first main light having a first number of peak wavelengths and a second main light emitter configured to emit a second main light having a second number of peak wavelengths. In addition, the auxiliary light source is configured to emit a third auxiliary light having a third number of peak wavelengths. The first number of peak wavelengths can be different from the second number of peak wavelengths. A peak wavelength of the second main light can be longer than all of the peak wavelengths of the first main light.

IPC Classes  ?

• A01G 7/04 - Electric or magnetic treatment of plants for promoting growth
• F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
• F21Y 113/00 - Combination of light sources

Abstract

According to one aspect of the present invention, a display device can be provided, the display device comprising: a display substrate; a plurality of light-emitting diodes supported on the display substrate and generating light; and electrode bodies electrically connecting the display substrate and the plurality of light-emitting diodes, wherein the difference between the peak wavelengths of light of the light-emitting diodes is at most 5 nm.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes

Abstract

1N1NN); and a barrier layer (130) surrounding the color crystal layers (122, 124, 126).

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/50 - Wavelength conversion elements
• H01L 33/58 - Optical field-shaping elements
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting device and a light emitting apparatus including the same are disclosed. A light emitting device includes a substrate, a plurality of protrusions protruding from one surface of the substrate, and a light emitting structure disposed on the substrate.

IPC Classes  ?

• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

Disclosed is a light emitting apparatus. The light emitting apparatus includes a substrate, a plurality of emitters disposed on the substrate and configured to emit light, at least one color-determining layer disposed on the plurality of emitters, and a barrier layer surrounding the color-determining layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/50 - Wavelength conversion elements

Abstract

According to one aspect of the present disclosure, there may be provided a display device including: a display board; a plurality of light sources supported by the display board to generate light; and an electrode body electrically connecting the display board and the plurality of light sources, a peak wavelength difference of the light emitted from the plurality of light sources being 5 nm or less.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/58 - Optical field-shaping elements

Abstract

A display device including a substrate, a light emitting stacked structure disposed on the substrate and including a plurality of epitaxial sub-units disposed one over another, a first adhesive layer bonding the epitaxial sub-units to the substrate; and a line part disposed on the substrate and configured to apply a light emitting signal to each of the epitaxial sub-units, in which the light emitting stacked structure is configured to provide light having various colors by a combination of light emitted from each of the epitaxial sub-units, and the first adhesive layer includes a conductive and non-transparent material.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/40 - Materials therefor
• H01L 33/50 - Wavelength conversion elements

Abstract

A pixel device is provided to include: a first light emitting source including a first light emitting structure including a first-1 semiconductor layer, a first active layer, and a first-2 semiconductor layer on a first base; a second light emitting source including a second light emitting structure including a second-1 semiconductor layer, a second active layer, and a second-2 semiconductor layer on the first light emitting source; a third light emitting source including a third light emitting structure including a third-1 semiconductor layer, a third active layer, and a third-2 semiconductor layer on the second light emitting source; a common electrode electrically connected to the first-1 semiconductor layer, the second-1 semiconductor layer, and the third-1 semiconductor layer; a first electrode electrically connected to the first-2 semiconductor layer; a second electrode electrically connected to the second-2 semiconductor layer; and a third electrode electrically connected to the third-2 semiconductor layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

IPC Classes  ?

• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor
• H01L 33/50 - Wavelength conversion elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A display panel including a circuit board having pads thereon, and a plurality of pixel regions arranged on the circuit board, each of the pixel regions including a first LED stack disposed on the circuit board, a first bonding layer disposed between the first LED stack and the circuit board, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, first through-vias passing through the first LED stack and the first bonding layer, second through-vias passing through the second LED stack, and third through-vias passing through the third LED stack, in which the first through-vias pass through the first LED stack and the first bonding layer, and are connected to the pads of the circuit board.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

In one aspect, a sterilization apparatus is provided to include a flow channel body comprising an inflow unit configured to provide an inflow channel through which water flows in one direction, a discharge unit configured to provide a discharge channel through which water is discharged, and a bypass channel unit configured to provide a bypass channel through which water bypasses in a different direction from the direction of the water flowing in the inflow unit; a mounting unit formed on the flow channel body and configured to provide an installation space connected to the bypass channel, a UV light emitting unit disposed in the installation space and configured to emit UV light towards the bypass channel; and a holder coupled to the mounting unit and securing the UV light emitting unit inside the mounting unit.

IPC Classes  ?

• C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light
• A61L 2/10 - Ultraviolet radiation
• A61L 2/26 - Accessories
• B01D 35/04 - Plug, tap, or cock filters
• B01D 35/16 - Cleaning-out devices

Abstract

A light emitting module according to an embodiment includes: a base plate; a light emitting device array substrate disposed on the base plate, and including a plurality of light emitting devices; a molding layer covering the light emitting devices; a circuit board having one end electrically connected to the light emitting device array substrate; a connector electrically connected to an opposite end of the circuit board; and a reinforcement plate disposed under the connector.

IPC Classes  ?

• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/58 - Optical field-shaping elements

Abstract

A light source includes a controller configured to turn on or off a plurality of light sources depending on a light period. The controller can be configured to turn on the light sources during each of a plurality of light periods such that the light sources emit a light having a spectrum with a plurality of peaks toward the plant. At least one light period can include a first period and a second period and the first period preceding or following the second period. The controller can adjust the spectrum of the light between the first period and the second period and/or during different light periods.

IPC Classes  ?

• A01G 7/04 - Electric or magnetic treatment of plants for promoting growth
• A01G 9/20 - Forcing-framesLights
• A01G 31/02 - Special apparatus therefor
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor
• H05B 45/20 - Controlling the colour of the light
• H05B 47/16 - Controlling the light source by timing means

Abstract

A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/42 - Transparent materials
• H01L 33/60 - Reflective elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the 10 transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

IPC Classes  ?

• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

122) (N is a natural number of 2 or more) are commonly connected to the substrate common electrode (110) so as to form a light-emitting group (G).

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

A light emitting device includes a first electrode pad and a second electrode pad, a first semiconductor layer disposed on an upper region of an active layer, a second semiconductor layer disposed on an upper region of the second electrode pad, the active layer disposed on an upper region of the second semiconductor layer, a first contact layer disposed on an upper region of the first semiconductor layer, and a first electrode pad disposed on an upper region of the first contact layer to be electrically connected to the first semiconductor layer through the first contact layer. An upper surface of the first semiconductor layer located in a non-light emitting region is placed higher than a light emitting surface corresponding to the upper surface of the first semiconductor layer located in a light emitting region, the non-light emitting region being a region in which the first contact layer is disposed.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

IPC Classes  ?

• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• G02B 27/01 - Head-up displays
• G06F 1/16 - Constructional details or arrangements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

The present invention relates to a light-emitting element and a light-emitting device comprising same. The light-emitting device according to an embodiment of the present invention comprises: first to third light-emitting devices, which include a substrate, a plurality of protrusions protruding from one surface of the substrate, and a light-emitting structure disposed on the substrate; and a circuit board on which the first to third light-emitting devices are mounted. Each of the first to third light-emitting elements includes a first conductive semiconductor layer, an active layer of a multiple quantum well structure, and a second conductive semiconductor layer, and the number of pairs of barrier layers and well layers constituting the active layer of the first light-emitting element is different from the number of pairs of barrier layers and well layers constituting the active layer of the second light-emitting element.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/58 - Optical field-shaping elements
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/52 - Encapsulations
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

The present invention relates to a light-emitting element and a method for manufacturing same. According to an embodiment, the light-emitting element may comprise a second electrode pad, a second semiconductor layer, an active layer, a first semiconductor layer, a first contact layer, and a first electrode pad. The second semiconductor layer may be formed on the second electrode pad and electrically connected to the second electrode pad. The active layer may be formed on the second semiconductor layer so as to generate and emit light. The first semiconductor layer may be formed on the active layer. The first contact layer may be formed on the first semiconductor layer. In addition, the first electrode pad may be formed on the first contact layer and electrically connected to the first semiconductor layer through the first contact layer. In addition, the upper surface of the first semiconductor layer located in a non-light emitting region may be located higher than the upper surface of the first semiconductor layer located in a light-emitting region which is a light-emitting surface.

IPC Classes  ?

• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A unit pixel and a displaying apparatus including the unit pixel are provided. The unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, a light blocking layer disposed between the transparent substrate and the light emitting devices, and having at least one window, and a semi-transmissive layer disposed between at least one of the plurality of light emitting devices and the transparent substrate to overlap with the window at least partially.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/58 - Optical field-shaping elements
• H01L 33/60 - Reflective elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

IPC Classes  ?

• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

A light emitting device including a first light emitting stack, a second light emitting stack, and a third light emitting stack each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a first adhesive layer bonding the first light emitting stack and the second light emitting stack, and a second adhesive layer bonding the second light emitting stack and the third light emitting stack, in which the second light emitting stack is disposed between the first light emitting stack and the third light emitting stack, and one of the first adhesive layer and the second adhesive layer electrically connects adjacent light emitting stacks.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, and an optical layer disposed between the light emitting devices and the transparent substrate and transmitting light emitted from the light emitting devices. The transparent substrate has a concavo-convex pattern on a surface facing the light emitting devices.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

The present invention relates to a pixel element for a display, and a display device having same. According to one embodiment, the pixel element comprises: a first light-emitting structure which is formed on a first base, and in which a 1-1 semiconductor layer, a first active layer and a 1-2 semiconductor layer are stacked; a second light-emitting structure which is formed on a first light-emitting unit, and in which a 2-1 semiconductor layer, a second active layer and a 2-2 semiconductor layer are stacked; a third light-emitting structure which is formed on a second light-emitting unit, and in which a 3-1 semiconductor layer, a third active layer, and a 3-2 semiconductor layer are stacked; a common electrode electrically connected to the 1-1 semiconductor layer, the 2-1 semiconductor layer and the 3-1 semiconductor layer at the same time; a first electrode electrically connected to the 1-2 semiconductor layer; a second electrode electrically connected to the 2-2 semiconductor layer; and a third electrode electrically connected to the 3-2 semiconductor layer. The common electrode and the first electrode are formed along one side surface of the 2-1 semiconductor layer and one side surface of the 3-1 semiconductor layer so as to be stair-structured.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting module according to an embodiment includes: a base plate; a light emitting element array substrate arranged on the base plate and including a plurality of light emitting elements; a molding part covering the light emitting elements; a circuit board having one end electrically connected to the light emitting element array substrate; a connector electrically connected to the other end of the circuit board; and a reinforcing plate arranged under the connector.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/52 - Encapsulations
• H01R 12/70 - Coupling devices
• H01L 33/58 - Optical field-shaping elements

Abstract

A plant cultivation light source includes a substrate and a first group of light sources. The first group of light sources includes a plurality of light sources disposed on the substrate, and a light source including a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer. The plurality of light sources operates to emit lights having different wavelength bands and includes a first light source that emits first light having an area of at least about 55% compared with an area of a normalized solar spectrum, a second light source that emits second light having a wavelength for cryptochrome, and a third light source that emits third light having a wavelength for phytochrome.

IPC Classes  ?

• F21S 10/02 - Lighting devices or systems producing a varying lighting effect changing colours
• F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
• F21W 131/109 - Outdoor lighting of gardens
• H05B 45/20 - Controlling the colour of the light

Abstract

A light emitting device for a display including a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a surface protection layer at least partially covering side surfaces of the first LED stack, the second LED stack, or the third LED stack, a first bonding layer interposed between the second LED stack and the third LED stack, a second bonding layer interposed between the first LED stack and the second LED stack, lower buried vias passing through the second LED stack and the first bonding layer, and electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the third LED stack, respectively, and upper buried vias passing through the first LED stack.

IPC Classes  ?

• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/42 - Transparent materials

Abstract

A light-emitting diode according to an embodiment comprises: a substrate; a first conductive-type semiconductor layer disposed on the substrate; a mesa disposed on the first conductive-type semiconductor layer and including an active layer and a second conductive-type semiconductor layer; an ohmic contact layer disposed on the second conductive-type semiconductor layer and formed by islands which are spaced apart from each other; a dielectric layer covering the ohmic contact layer and having openings through which the respective islands are exposed; a metal reflective layer covering the dielectric layer and electrically connected to the islands through the openings of the dielectric layer; a lower insulating layer covering the metal reflective layer and having an opening through which the metal reflective layer is exposed; and first and second bump pads disposed on the lower insulating layer and electrically connected to the first and second conductive-type semiconductor layers, respectively.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode, a second light emitting part disposed over the first light emitting part and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a third light emitting part disposed over the second light emitting part and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode, in which the light emitting device has substantially a quadrangular shape when viewed from the top, and has first to fourth corners.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A display apparatus including a substrate, and pixel regions and at least one separation region between the pixel regions, each pixel region including a first LED stack, a second LED stack adjacent to the first LED stack, a third LED stack adjacent to the second LED stack and each having a side surface forming a first angle, a second angle, and a third angle with the substrate, respectively, electrode pads electrically connected to the first, second, and third LED stacks, and an insulation layer disposed on at least one of the first, second, and third LED stacks, in which the first LED stack is configured to emit light having a longer peak wavelength than that emitted from the second and third LED stacks, and the first angle is different from the second and third angles.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/50 - Wavelength conversion elements

Abstract

A unit pixel is provided. The unit pixel includes a transparent substrate, a first light blocking layer disposed on the transparent substrate and having windows that transmit light, an adhesive layer covering the first light blocking layer, a plurality of light emitting devices disposed on the adhesive layer to be arranged on the windows, and a second light blocking layer covering side surfaces of the light emitting devices.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/58 - Optical field-shaping elements
• H01L 33/60 - Reflective elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light source for eye wellness configured to emit light having a wavelength range from 380 nm to 780 nm, and has a spectrum area that overlaps at least 55% of an area of a normalized solar spectrum, in which a valley wavelength of the light has a deviation equal to or less than 0.15 form the normalized solar spectrum in the wavelength range from 460 nm to 490 nm, and a color temperature of the light is in a range of 2600K to 7000K.

IPC Classes  ?

• A61N 5/06 - Radiation therapy using light

Abstract

A light emitting module including a light source configured to irradiate ultraviolet light, a board on which the light source is disposed, a tube accommodating the board and including a transparent region to transmit the ultraviolet light emitted from the light source, a first base coupled to one side of the tube, a second base coupled to the other side of the tube, a fixation groove disposed in the tube and connected to at least one of the first and second bases, in which the board is coupled to be inserted into the fixation groove, and the fixation groove is spaced apart from a center of the first base when viewed in a cross-section perpendicular to a length direction of the tube.

IPC Classes  ?

• C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light

Abstract

A light emitting device including a substrate having a first region and a second region, a light emitting stack including vertically stacked semiconductor layers disposed on the first region of the substrate, at least one pillar disposed on the second region of the substrate and laterally spaced apart from the light emitting stack, and at least one electrode extending from the first region to the second region of the substrate and electrically connecting the light emitting stack to the at least one pillar, in which the at least one pillar is disposed on the at least one electrode, respectively.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/50 - Wavelength conversion elements
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting device including an insulation unit, a light emitting region including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first pillar electrically connected to the first conductivity type semiconductor layers of the first, second, and third LED stacks, and a second pillar, a third pillar, and a fourth pillar electrically connected to the second conductivity type semiconductor layers of the first, second, and third LED stacks, respectively, an intermediate first connector and a lower first connector respectively electrically connecting the first conductivity type semiconductor layers of the second LED stack and the third LED stack to the first pillar, in which the insulation unit have four corners, and the first, second, third, and fourth pillars are disposed near the four corners covering a side surface of the insulation unit, respectively.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting apparatus includes a base substrate, at least a light emitting source disposed on the base substrate, and a multi-refractive layer refracting light emitted from the light emitting source, where the multi-refractive layer includes a first refractive layer and a second refractive layer disposed outside the first refractive layer, the first refractive layer having a lower index of refraction than the second refractive layer.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/54 - Encapsulations having a particular shape

Abstract

A light emitting apparatus is disclosed. The light emitting apparatus includes: a base substrate; a plurality of circuits disposed on an upper side of the base substrate; a light emitting source included in at least one circuit among the plurality of circuits; a first pad and a second pad disposed on a lower side of the base substrate and contacting one electrode or another electrode of each of the plurality of circuits; and an electrodeless pad array disposed on the lower side of the base substrate. The number of electrodeless pads included in the electrodeless pad array is determined based on a number of the plurality of circuits.

IPC Classes  ?

• F21V 19/00 - Fastening of light sources or lamp holders
• F21Y 105/18 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array annularPlanar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array polygonal other than square or rectangular, e.g. for spotlights or for generating an axially symmetrical light beam
• F21Y 113/00 - Combination of light sources
• F21Y 115/10 - Light-emitting diodes [LED]
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/60 - Reflective elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting apparatus is disclosed. The light emitting apparatus includes a base substrate, at least a light emitting source disposed on the base substrate, and a multi-refractive layer refracting light emitted from the light emitting source, wherein the multi-refractive layer includes a first refractive layer and a second refractive layer disposed outside the first refractive layer, the first refractive layer having a lower index of refraction than the second refractive layer.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A light emitting apparatus is disclosed. The light emitting apparatus includes: a base substrate; a plurality of circuits disposed on an upper side of the base substrate; at least a light emitting source included in at least a circuit among the plurality of circuits; a first pad and a second pad disposed on a lower side of the base substrate and contacting one electrode or the other electrode of each of the plurality of circuits; and an electrodeless pad array disposed on the lower side of the base substrate, wherein the number of electrodeless pads included in the electrodeless pad array is determined based on the number of circuits.

IPC Classes  ?

• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/50 - Wavelength conversion elements

Abstract

An air purifier includes a case having an air inlet and an air outlet, a fan disposed adjacent the air inlet, a UV LED unit and a filter unit arranged over the fan along a flow path of air, and a fluid control structure disposed between the fan and the filter unit.

IPC Classes  ?

• A61L 9/20 - Ultraviolet radiation
• B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
• F24F 1/0071 - Indoor units, e.g. fan coil units with means for purifying supplied air
• F24F 8/22 - Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by sterilisation using UV light

Abstract

A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

IPC Classes  ?

• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

wellfirstfirst ≤ 0.7.

IPC Classes  ?

• H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

The present document relates to a light emitting device having a protruding pattern structure. The light emitting device suggested herein is characterized by comprising: a substrate including a first protruding pattern on the upper surface; a base layer formed on the upper end of the substrate; a first electrode layer formed on the upper end of the base layer; a light emitting layer formed on the upper end of the first electrode layer; and a second electrode layer formed on the upper end of the light emitting layer, wherein the base layer includes a second protruding pattern, different from the first protruding pattern, on the upper surface.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/60 - Reflective elements
• F21K 9/66 - Details of globes or covers forming part of the light source
• F21K 9/238 - Arrangement or mounting of circuit elements integrated in the light source

Abstract

A light emitting apparatus is disclosed. The light emitting apparatus includes: a plurality of circuits disposed on a base substrate; one or more light emitting sources in at least a circuit among the plurality of circuits; and a pad disposed under the base substrate and contacting one electrode and another electrode of each of the plurality of circuits. The pad includes: a first sub-pad contacting one electrode of a first circuit among the plurality of circuits, a third sub-pad contacting another electrode of the first circuit, a second sub-pad contacting one electrode of a second circuit among the plurality of circuits, and a fourth sub-pad contacting another electrode of the second circuit, and at least a region of one surface of the second sub-pad is disposed to face at least a region of one surface of the third sub-pad.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, and the plurality of emitters is disposed in substantially a honeycomb shape on the substrate.

IPC Classes  ?

• H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• H01S 5/042 - Electrical excitation
• H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
• H01S 5/42 - Arrays of surface emitting lasers

Abstract

A light emitting device for a display including: a base layer; a first LED sub-unit, a second LED sub-unit, and a third LED sub-unit on the base layer; and a supporting layer covering the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit, in which the third LED sub-unit is configured to emit light having a shorter wavelength than that of light emitted from the first LED sub-unit, and to emit light having a longer wavelength than that of light emitted from the second LED sub-unit, and a luminous intensity ratio of light emitted from the third LED sub-unit and the second LED sub-unit is configured to be about 6:1.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting device, according to one embodiment, comprises: a substrate; a semiconductor laminate comprising a first conductive window layer and a mesa disposed on one region of the first conductive window layer, wherein the mesa comprises an active layer and a second conductive window layer; an adhesive layer disposed between the semiconductor laminate and the substrate; a first ohmic layer electrically connected to the first conductive window layer; a second ohmic layer electrically connected to the second conductive window layer; and a first electrode pad and a second electrode pad disposed on the semiconductor laminate so as to face the substrate, and electrically connected to the first ohmic layer and the second ohmic layer, respectively.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/60 - Reflective elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A light emitting device is provided that includes: a substrate including a first protrusion pattern on its top surface; a base layer formed on a top of the substrate; a first electrode layer formed on a top of the base layer; a light emitting layer formed on a top of the first electrode layer; and a second electrode layer formed on a top of the light emitting layer. The base layer includes a second protrusion pattern different from the first protrusion pattern on a top surface thereof.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting diode according to an exemplary embodiment of the present disclosure includes a first conductivity type semiconductor layer; an active region including a barrier layer and a well layer; a strain control layer disposed between the first conductivity type semiconductor layer and the active region; a superlattice layer disposed between the strain control layer and the active region; a second conductivity type semiconductor layer disposed on the active region; and an electron blocking layer disposed between the active region and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer and the well layer are represented by a predetermined formula, and a ratio of a mole fraction of In to a mole fraction of Ga in the first conductivity type semiconductor layer and a ratio of a mole fraction of In to a mole fraction of Ga in the well layer satisfy a predetermined equation.

IPC Classes  ?

• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

A light emitting device according to an embodiment includes: a substrate; a first conductivity type window layer and a mesa disposed on one region of the first conductivity type window layer, in which the mesa is a semiconductor stack including an active layer and a second conductivity type window layer; an adhesive layer disposed between the semiconductor stack and the substrate; a first ohmic layer electrically connected to the first conductivity type window layer; a second ohmic layer electrically connected to the second conductivity type window layer; and a first electrode pad and a second electrode pad disposed on the semiconductor stack to face the substrate, and electrically connected to the first ohmic layer and the second ohmic layer, respectively.

IPC Classes  ?

• H01L 33/40 - Materials therefor
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A light emitting apparatus is disclosed. The light emitting apparatus includes: a plurality of circuits disposed on a base substrate; one or more light emitting sources in at least a circuit among the plurality of circuits; and a pad disposed under the base substrate and contacting one electrode and another electrode of each of the plurality of circuits. The pad includes: a first sub-pad contacting one electrode of a first circuit among the plurality of circuits, a third sub-pad contacting another electrode of the first circuit, a second sub-pad contacting one electrode of a second circuit among the plurality of circuits, and a fourth sub-pad contacting another electrode of the second circuit, and at least a region of one surface of the second sub-pad is disposed to face at least a region of one surface of the third sub-pad.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group

Abstract

A light-emitting diode includes a first conductive semiconductor layer, an upper insulating layer positioned on the first conductive semiconductor layer, a mesa including an active layer and a second conductive semiconductor layer and positioned under a certain region of the first conductive semiconductor layer, and first and second through-holes through which the first conductive semiconductor layer is exposed. The first through-holes are arranged in a region encompassed by the edge of the mesa. The second through-holes are arranged along the edge of the mesa so that some of the second through-holes are encompassed by the active layer and the second conductive semiconductor layer, respectively.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/40 - Materials therefor
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass
• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor
• H01L 33/42 - Transparent materials
• H01L 33/50 - Wavelength conversion elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H10K 10/84 - Ohmic electrodes, e.g. source or drain electrodes
• H10K 50/813 - Anodes characterised by their shape
• H10K 50/818 - Reflective anodes, e.g. ITO combined with thick metallic layers
• H10K 50/822 - Cathodes characterised by their shape
• H10K 50/828 - Transparent cathodes, e.g. comprising thin metal layers
• H10K 59/32 - Stacked devices having two or more layers, each emitting at different wavelengths
• H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Abstract

The present disclosure relates to a light emitting module and a display device including the same. In particular, there is provided a light emitting module, including: a module body including a base having an upper surface, a lower surface, and a plurality of peripheral surfaces connected to the upper surface and the lower surface; a plurality of electrodes disposed to be exposed to an outside on at least a part of the plurality of peripheral surfaces of the base; a plurality of light emitting elements disposed on the base to be connected to two or more of the plurality of electrodes; and a molding covering the plurality of light emitting elements.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/54 - Encapsulations having a particular shape

Abstract

A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/42 - Transparent materials
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

This light-emitting module may comprise: a module body which includes a base having an upper surface, a lower surface, and a plurality of circumferential surfaces connected to the upper and lower surfaces; a plurality of electrodes which are arranged on at least some of the plurality of circumferential surfaces of the base to be exposed to the outside; a plurality of light-emitting elements which are arranged at the base to be connected to two or more of the plurality of electrodes; and a molding which covers the plurality of light-emitting elements.

IPC Classes  ?

• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/54 - Encapsulations having a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A display module according to an embodiment includes: a circuit board; a light emitting device disposed on the circuit board; and a molding layer covering the light emitting device, the light emitting device, including: a first LED stack generating light of a first wavelength; a second LED stack disposed on the first LED stack and generating light of a second wavelength; and a third LED stack disposed on the second LED stack and generating light of a third wavelength, in which each of the first, second, and third LED stacks includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and polarities of the first LED stack and the third LED stack disposed over and under the second LED stack are asymmetric with respect to the second LED stack.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/52 - Encapsulations
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light irradiation apparatus includes first and second light sources that emit first light and second light, respectively. The first and the second lights have mutually different wavelengths at timings close to each other, regardless of overlap between the first light and the second light. The first light has a wavelength band for inducing destruction of bacteria by damaging a cell of the bacteria as the first light acts on a photosensitizer present in the bacteria. The second light has a wavelength band for inducing the destruction of the bacteria by changing the structure of a genetic material present in the cell of the bacteria. A dose of the second light source is less than 1/10 of a dose of the first light source.

IPC Classes  ?

• A61N 5/06 - Radiation therapy using light
• A61M 13/00 - Insufflators for therapeutic or disinfectant purposes

Abstract

A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and a plurality of pads disposed over the first LED stack. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region. The plurality of pads is disposed on the peripheral region of the first LED stack.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting device including a first light emitting part, a second light emitting part disposed on a first surface of the first light emitting part, and a third light emitting part disposed on a first surface of the second light emitting part, a first contact member contacting a surface of a second n-type semiconductor layer of the second light emitting part, an ohmic electrode electrically connected to a third p-type semiconductor layer of the third light emitting part, and an adhesive layer disposed between the second light emitting part and the third light emitting part, in which the first contact member extends toward the first light emitting part to be electrically connected to a first n-type semiconductor layer of the first light emitting part, and the adhesive layer extends toward the ohmic electrode.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/50 - Wavelength conversion elements

Abstract

This display module comprises: a circuit board; a light-emitting element arranged on the circuit board; and a molding layer for covering the light-emitting element, wherein the light-emitting element including: a first LED stack for generating light of a first wavelength; a second LED stack, which is arranged on the first LED stack and generates light of a second wavelength; and a third LED stack, which is arranged on the second LED stack and generates light of a third wavelength, wherein each of the first, second and third stacks includes: a first conductive type semiconductor layer; a second conductive type semiconductor layer; and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the first LED stack and third LED stack, which are arranged above and below the second LED stack on the basis of the second LED stack, have polarities that are asymmetrical to each other.

IPC Classes  ?

• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/52 - Encapsulations
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A light module including a base substrate having a front surface, first and second electrodes disposed on the front surface, first and second emitters disposed on the front surface, a first molding covering the first emitter, and a second molding layer covering the second emitter, in which the first and second electrodes include a first region and a second region exposed from the base substrate, and an embedded region between the first region and the second region and not exposed to the outside, and a distance between the second region of the first electrode connected to the first emitter and the second region of the second electrode connected to the second emitter is shorter than a distance between the first region of the first electrode connected to the first emitter and the first region of the second electrode connected the second emitter.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/60 - Reflective elements

Abstract

A light emitting apparatus includes a substrate, a plurality of light emitting structures, a window, and a reflector. The substrate has a luminous region and a non-luminous region. The plurality of light emitting structures is disposed on the luminous region of the substrate. The window has a dome shape and is disposed to cover the luminous region. The window is configured to control a traveling path of light emitted from the a plurality of light emitting structures. The reflector is configured to support the window and reflect the light emitted from the plurality of light emitting structures. The reflector has an opening that exposes the plurality of light emitting structures mounted on the substrate. A distance between two adjacent light emitting structures of the plurality of light emitting structures is 500 micrometers or less.

IPC Classes  ?

• F21K 9/69 - Details of refractors forming part of the light source
• F21Y 105/16 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
• F21Y 115/10 - Light-emitting diodes [LED]
• G02B 19/00 - Condensers

Abstract

A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 29/45 - Ohmic electrodes
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor
• H01L 33/42 - Transparent materials
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/50 - Wavelength conversion elements
• H01L 33/58 - Optical field-shaping elements
• H01L 33/60 - Reflective elements
• H10K 59/32 - Stacked devices having two or more layers, each emitting at different wavelengths
• H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
• H10K 59/38 - Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
• H10K 102/00 - Constructional details relating to the organic devices covered by this subclass

Abstract

A light emitting system is disclosed. The light emitting system includes: a means whose location can change; and multiple light emitting modules disposed in each section of the means, wherein one or more of the multiple light emitting modules is selectively turned on by a user for purpose to be recognized from outside.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• B60Q 1/50 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating other intentions or conditions, e.g. request for waiting or overtaking
• B60Q 3/70 - Arrangement of lighting devices for vehicle interiorsLighting devices specially adapted for vehicle interiors characterised by the purpose
• G06Q 20/08 - Payment architectures
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H05B 45/20 - Controlling the colour of the light
• H05B 47/155 - Coordinated control of two or more light sources

Abstract

Disclosed herein are a sterilization module and a sterilization apparatus including the same. The sterilization module includes a support member and multiple germicidal light sources. The multiple germicidal light sources are mounted on the support member and emit germicidal light which is light having a wavelength capable of inactivating microorganisms. In addition, respective light exit surfaces of the multiple germicidal light sources face in different directions from one another. Further, an irradiance of the germicidal light delivered to a sterilization target is greater than a minimum irradiance required for sterilization.

IPC Classes  ?

• A61L 2/10 - Ultraviolet radiation

Abstract

A light emitting apparatus includes a substrate, at least one light emitting device disposed on one surface of the substrate, and a molding layer covering at least a region of the light emitting device, and further includes a first microelement disposed above the light emitting device, wherein the first microelement includes a curved surface formed in at least a region of at least one of upper and lower surfaces thereof.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements

Abstract

A light-emitting system is disclosed. The light-emitting system comprises: a unit having a position that can be changed; and a plurality of light-emitting modules disposed in each section of the unit, wherein one or more of the plurality of light-emitting modules are selectively turned on by a user, according to purpose, to be recognized from the outside.

IPC Classes  ?

• H05B 47/155 - Coordinated control of two or more light sources
• H05B 45/20 - Controlling the colour of the light
• H05B 45/10 - Controlling the intensity of the light
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• G06Q 20/14 - Payment architectures specially adapted for billing systems

Abstract

The present invention relates to a light-emitting device and a display device comprising same, and, more specifically, to a light-emitting device comprising a light-emitting element, and a display device comprising same. The present invention provides a light-emitting device (100) which comprises: a substrate (110); at least one light-emitting element (120) mounted on one surface of the substrate (110); and a molding layer (130) covering at least some areas of the light-emitting element (120), and which comprises a first micro element (140) arranged on the light-emitting element (120), wherein the first micro element (140) has a curved surface (U) formed on at least a portion of a top surface and/or a bottom surface thereof.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/52 - Encapsulations
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A transferring method for a light emitting device for a display includes manufacturing a wafer having unit pixels, cutting the wafer on a temporary substrate to singularize the unit pixels, measuring electrical or optical characteristics of the singularized unit pixels, and transferring unit pixels selected according to the electrical or optical characteristics to a carrier substrate. The selected unit pixels are transferred to the carrier substrate in a unit of a predetermined area encompassing a plurality of unit pixels.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A sterilization module includes a main body having an opening on the top surface thereof, a transparent member which is arranged on the inside of the main body so as to cover the opening, and through which light passes, an inner sealing member which is made of an elastic material and which covers the side surface of the transparent member, a light emitting module that comprises a substrate and a light emitting element installed on the upper surface of the substrate, and which emits light through the transparent member, and an inner holder which is fastened to the inner side surface of the main body and fixes the light emitting module to the inside of the main body.

IPC Classes  ?

• A61L 2/10 - Ultraviolet radiation
• A61L 2/26 - Accessories

Abstract

A light irradiation device including an injection unit to inject a sample, and a light source to apply light to the sample to identify an abnormal cell in the sample, the light source including a substrate and a light emitter including a light emitting diode, in which the light emitted is to cut a genetic material in the sample into sections of different sizes, and to deform the genetic material to different degrees, such that a determination of an abnormality of the sample is based on the degree of deformation, and an irradiation amount or intensity of the light is at an intensity in which a cytotoxicity value of the sample is greater than or equal to a predetermined value, and a ratio of a degree of deformation of the genetic material of the normal sample to that of the abnormal sample is set to be a minimum value.

IPC Classes  ?

• G01N 15/1429 - Signal processing
• G01N 1/30 - StainingImpregnating
• G01N 15/00 - Investigating characteristics of particlesInvestigating permeability, pore-volume or surface-area of porous materials
• G01N 15/01 - Investigating characteristics of particlesInvestigating permeability, pore-volume or surface-area of porous materials specially adapted for biological cells, e.g. blood cells
• G01N 15/1434 - Optical arrangements
• G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation
• G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
• G01N 21/64 - FluorescencePhosphorescence
• G01N 27/447 - Systems using electrophoresis
• G01N 33/49 - Physical analysis of biological material of liquid biological material blood

Abstract

A light emitting apparatus including a circuit board, and a plurality of emitters each including an epitaxial stack including a light emission area defined by the epitaxial stacks and a bump electrode disposed on the emitter, an encapsulating member covering a side surface and an upper surface of the surface of the emitters, and fan-out lines covered by the encapsulation and electrically connected to one of the emitters, the fan-out line including a first portion facing the one of the emitters and a second portion extend from the first portion, and a distribution line disposed on the circuit board which is electrically connected to the fan out line, wherein the encapsulation fills a region between the one of the emitters and the first portion of the fan-out line and a region between the circuit board and the second portion of the fan-out lines in a cross-section view.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/50 - Wavelength conversion elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A unit pixel includes a transparent substrate having an upper surface and a lower surface, a plurality of light emitting devices arranged over the upper surface of the transparent substrate, and a reflector disposed between the light emitting devices and the transparent substrate. Light emitted from the light emitting devices is configured to exit to the outside through the upper and lower surfaces of the transparent substrate, and the reflector is configured to reflect light proceeding to the upper surface of the transparent substrate from the inside of the transparent substrate.

IPC Classes  ?

• H01L 33/60 - Reflective elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, a third-1 connector and a third-2 connector disposed between the second LED stack and the third LED stack, and a plurality of pads disposed over the first LED stack, and electrically connected to the first, second, and third LED stacks. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A lighting apparatus including at least two of first, second, and third light units, in which the first light unit includes a first LED emitting light having a peak wavelength in a range of 286 to 304 nm and a first wavelength converter, and to emit a portion of light from the first LED to the outside, the second light unit includes a second LED emitting light having a peak wavelength in a range of 400 to 420 nm and a second wavelength converter, and to emit a portion of light from the second LED to the outside, and the third light unit includes a third LED emitting light having a peak wavelength in a range of 286 to 470 nm and a third wavelength converter emitting light having a central wavelength in a range of 685 to 705 nm, 790 to 840 nm, or 875 to 935 nm.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A light emitting module includes a light emitting device. The light emitting device includes: a substrate; a first window layer supplying electrons; a second window layer supplying holes; an active layer disposed between the first window layer and the second window layer; a first ohmic electrode electrically connected to the first window layer; and a second ohmic electrode electrically connected to the second window layer. The first window layer includes a first high-level doped layer having a higher doping level applied than other portions thereof. The first ohmic electrode is electrically connected to the first high-level doped layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/52 - Encapsulations
• H01L 33/60 - Reflective elements

Abstract

A light-emitting module is disclosed. The light-emitting module may include: a substrate; a first window layer for supplying electrons; a second window layer for supplying holes; an active layer arranged between the first window layer and the second window layer; a first ohmic electrode electrically connected to the first window layer; and a second ohmic electrode electrically connected to the second window layer, wherein the first window layer includes a first high-level doping layer having a relatively higher doping level than other portions, and the first ohmic electrode includes a light-emitting element electrically connected to the first high-level doping layer.

IPC Classes  ?

• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/52 - Encapsulations
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass
• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor
• H01L 33/42 - Transparent materials
• H01L 33/50 - Wavelength conversion elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H10K 10/84 - Ohmic electrodes, e.g. source or drain electrodes
• H10K 50/813 - Anodes characterised by their shape
• H10K 50/818 - Reflective anodes, e.g. ITO combined with thick metallic layers
• H10K 50/822 - Cathodes characterised by their shape
• H10K 50/828 - Transparent cathodes, e.g. comprising thin metal layers
• H10K 59/32 - Stacked devices having two or more layers, each emitting at different wavelengths
• H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Abstract

A light module includes a first light emitter, a second light emitter, a third light emitter, and a controller. The first light emitter is configured to emit a first light having a first peak wavelength in a visible range, the second light emitter is configured to emit a second light having a waveform having a second peak wavelength higher than the first peak wavelength, and the third light emitter is configured to emit a third light having a third peak wavelength that is shorter than the first peak wavelength. The controller is configured to control the first light emitter, the second light emitter, and the third light emitter to generate a first light pattern and a second light pattern. The first light pattern comprises a first light spectrum and the second light pattern comprises a second light spectrum including at least one more peak wavelength than the first light spectrum.

IPC Classes  ?

• A01G 7/04 - Electric or magnetic treatment of plants for promoting growth
• A01G 9/20 - Forcing-framesLights
• F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
• F21Y 113/13 - Combination of light sources of different colours comprising an assembly of point-like light sources
• F21Y 115/10 - Light-emitting diodes [LED]

Abstract

A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages

Abstract

A sterilizing device includes a pipe having an inlet and an outlet and allowing fluid to move therethrough and a light source provided on one side of the pipe and providing light to the fluid. At least a portion of the pipe is provided in a spiral shape and the inlet and/or the outlet are arranged in a light emitting region.

IPC Classes  ?

• C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light

Abstract

A light-emitting diode (LED) unit for a display including a plurality of pixels each including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first, second, and third light emitting cells including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell, a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell, in which the first, second, and third light emitting cells of each pixel share the first conductivity type semiconductor layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or

Abstract

A light emitting device for a display according to an exemplary embodiment includes a first LED stack, a second LED stack located under the first LED stack, and a third LED stack located under the second LED stack. The light emitting device further includes a first bonding layer, a second bonding layer, a first planarization layer, a second planarization layer, lower buried vias, and upper buried vias. The first planarization layer is recessed inwardly to expose an edge of the second LED stack.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting device including a light emitting structure including a plurality of light emitting parts, a dielectric structure disposed outside the light emitting structure, and a plurality of pads disposed on a first surface of the light emitting structure and electrically coupled with the light emitting parts, in which outer sidewalls of the pads are disposed inside an outer sidewall of the light emitting structure and an outer sidewall of the dielectric structure, at least one of the pads extends to a first surface of the dielectric structure, and the first surface of the dielectric structure is coplanar with the first surface of the light emitting structure.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/50 - Wavelength conversion elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a first portion of the first LED sub-unit, and a third LED sub-unit disposed on a second portion of the second LED sub-unit, in which each of the first, second, and third LED sub-units includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, light generated from the first LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a third portion of the first LED sub-unit different from the first portion, and light generated from the second LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a fourth portion of the second LED sub-unit different from the second portion.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/40 - Materials therefor
• H01L 33/50 - Wavelength conversion elements

Abstract

A sterilizing apparatus is disclosed. A sterilizing apparatus according to one embodiment comprises: a cover main body unit having an accommodation space formed therein so as to accommodate a device to be sterilized, wherein the accommodation space is open toward a bottom surface on which the device to be sterilized is disposed; an ultraviolet light emitting diode provided on a surface facing the bottom surface of the cover main body unit, and turned on so as to emit ultraviolet rays toward the accommodation space; a power supply unit for supplying power to the ultraviolet light emitting diode so as to turn on the ultraviolet light emitting diode; and a control unit for controlling an operation of the power supply unit.

IPC Classes  ?

• A61L 2/10 - Ultraviolet radiation
• A61L 2/26 - Accessories
• E03C 1/126 - Installations for disinfecting or deodorising waste-water plumbing installations
• G01B 5/24 - Measuring arrangements characterised by the use of mechanical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of mechanical techniques for testing the alignment of axes
• G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness

Abstract

A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. the first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate. At least one of the second conductivity type semiconductor layers in the first to third light emitting stacks is divided into two regions.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A unit pixel includes a transparent substrate, a plurality of light emitting devices disposed on the transparent substrate, and an electrostatic discharge (ESD) protector disposed on the transparent substrate and protecting at least one of the light emitting devices from electrostatic discharge.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A pixel device including first light emitting device; a second light emitting device disposed laterally adjacent to the first light emitting device; a first cover layer covering the first light emitting device and the second light emitting device; and connection layers disposed on the first cover layer, and electrically connected to the first and second light emitting devices, in which the first light emitting device includes a first light emitting structure, and the second light emitting device includes a second light emitting structure and a third light emitting structure, in which the first light emitting structure emits light having a peak wavelength longer than peak wavelengths of light emitted from the second and third light emitting structures, and the second and third light emitting structures emit light having different peak wavelengths from each other.

IPC Classes  ?

• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system