The disclosure is related to structures and methods of making thermoelectric devices. The methods may include preparing an electrically and thermally nonconductive substrate covered with gold-nickel-gold layers. In another step, cylindrical or frustum-shaped tunnels may be formed through the substrate and the gold-nickel-gold layers. Another step may include depositing a barrier layer on the walls of the tunnels that resists diffusion. N-type and p-type thermoelectric materials may be individually associated with and deposited on the barrier layers of the tunnels, and a metal layer may be deposited on the thermoelectric materials. The thermoelectric layers may be formed by combining alternating layers of thermoelectric materials and interlayers of phonon blocking materials. The method may include forming notches in the gold-nickel-gold layers to break electrical continuity. The method may also include a step of partially or fully capping the tunnels with sintered nano-silver or solder.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A portable, independent thermoelectric temperature regulated system for providing active cooling to one or more payloads. The system includes a thermally insulated housing, a phase change material, one or more thermoelectric converters embedded in the thermally insulated housing, and a power source. The system includes a control circuit for managing temperature of the payload(s) based on user selections. The phase change material may be charged and discharged to provide passive cooling or heating when the thermoelectric converter is not active.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
The present disclosure is related to nested heating systems. The heating system uses nested thermoelectric heating assemblies, and hot temperatures can be increased by adding intermediate nested heating assemblies. Intermediate and/or inner assemblies may be removed from the outer assembly to allow for easy transport.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 23/38 - Cooling arrangements using the Peltier effect
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a cylindrical plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H10N 10/852 - Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
H10N 10/853 - Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
H10N 10/855 - Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
H10N 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups
The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically nonconductive and thermally conductive substrate with direct bonded or electroplated copper. Thermoelement pairs are formed on a barrier layer deposited on the outer layers of the substrate in gaps formed from insulator material deposited on the barrier layer. Openings in the barrier layer may be filled with an insulator to isolate thermoelements, which may then be bridged by a metal layer. Thermoelement pairs may be combined to form larger devices.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically nonconductive and thermally conductive substrate with direct bonded or electroplated copper. Thermoelement pairs are formed on a barrier layer deposited on the outer layers of the substrate in gaps formed from insulator material deposited on the barrier layer. Openings in the barrier layer may be filled with an insulator to isolate thermoelements, which may then be bridged by a metal layer. Thermoelement pairs may be combined to form larger devices.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
H10N 10/13 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
The present disclosure is related to thermoelectric cooling of computer processors and memories. The cooling system includes one or more thin film thermoelectric cooling converters disposed on one or more computer processors and/or memories and in thermal communication with a heat exchanger. The thermoelectric converter(s) may be in contact with all or only part of the processor/memory, which allows for the cooling to be focused on a particular processor/memory or only a portion of the processor/memory that benefits from extra cooling.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
13.
Thermoelectric energy harvesting apparatus system and method
The present disclosure is related to thermoelectric energy harvesting and powering of Internet-of-Things (IoT) devices and systems. The thermoelectric energy harvesting device includes a thermoelectric converter electrically coupled to voltage rectifier and a power storage medium. The first side of the thermoelectric converter is exposed to ambient air with fluctuating temperatures, while the second side is anchored to a stable temperature. Power generated across the temperature differential can be captured in the power storage medium. The harvester may also include a device to move the harvester relative to the air and, by generating convection cooling of the first side, increase the net energy harvested.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.
The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
The present disclosure is related to nested cooling and heating systems. The cooling system includes an outer cooling assembly with an inner cooling assembly inserted within the outer cooling system. The inner cooling assembly includes thermoelectric coolers, and the outer cooling assembly may thermoelectric or vapor compression driven. Additional intermediate cooling assemblies may be nested together with the inner and outer cooling assemblies to increase the cooling effect in the innermost cooling assembly. Similarly, the heating system uses nested thermoelectric heating assemblies, and hot temperatures can be increased by adding intermediate nested heating assemblies. Intermediate and/or inner assemblies may be removed from the outer assembly to allow for easy transport
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
F28D 7/10 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
17.
Nested freezers for storage and transportation of covid vaccine
The present disclosure is related to nested cooling and heating systems. The cooling system includes an outer cooling assembly with an inner cooling assembly inserted within the outer cooling system. The inner cooling assembly includes thermoelectric coolers, and the outer cooling assembly may thermoelectric or vapor compression driven. Additional intermediate cooling assemblies may be nested together with the inner and outer cooling assemblies to increase the cooling effect in the innermost cooling assembly. Similarly, the heating system uses nested thermoelectric heating assemblies, and hot temperatures can be increased by adding intermediate nested heating assemblies. Intermediate and/or inner assemblies may be removed from the outer assembly to allow for easy transport.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 23/38 - Cooling arrangements using the Peltier effect
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
18.
THERMOELECTRIC ENERGY HARVESTING APPARATUS, SYSTEM AND METHOD
The present disclosure is related to thermoelectric energy harvesting and powering of Internet-of-Things (IoT) devices and systems. The thermoelectric energy harvesting device includes a thermoelectric converter electrically coupled to voltage rectifier and a power storage medium. The first side of the thermoelectric converter is exposed to ambient air with fluctuating temperatures, while the second side is anchored to a stable temperature. Power generated across the temperature differential can be captured in the power storage medium. The harvester may also include a device to move the harvester relative to the air and, by generating convection cooling of the first side, increase the net energy harvested.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/02 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
A portable, independent thermoelectric temperature regulated system for providing active cooling to one or more payloads. The system includes a thermally insulated housing, one or more thermoelectric converters embedded in the thermally insulated housing, and a power source. The system may include one or more optional payload containers. Multiple payload containers may be used in the same housing. The system includes a control circuit for managing temperature of the payload(s) based on user selections. The housing may be hard or soft, and the multiple payload containers may be maintained at different temperatures. Optional phase change materials may be included that may be charged by the active thermoelectric converter discharged as a source of passive cooling or heating.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
20.
INTEGRATED THERMOELECTRIC DEVICES ON INSULATING MEDIA
The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.
H01L 35/20 - Selection of the material for the legs of the junction using inorganic compositions comprising metals only
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers
The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H10N 10/852 - Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
H10N 10/853 - Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
H10N 10/855 - Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
H10N 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups
F25B 21/04 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect reversible
The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
H01L 35/16 - Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
H01L 35/18 - Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth
H01L 35/20 - Selection of the material for the legs of the junction using inorganic compositions comprising metals only
H01L 35/22 - Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen, or nitrogen
A portable, independent thermoelectric temperature regulated system for providing active cooling to one or more payloads. The system includes a thermally insulated housing, one or more thermoelectric converters embedded in the thermally insulated housing, and a power source. The system may include one or more optional payload containers. Multiple payload containers may be used in the same housing. The system includes a control circuit for managing temperature of the payload(s) based on user selections. The housing may be hard or soft, and the multiple payload containers may be maintained at different temperatures. Optional phase change materials may be included that may be charged by the active thermoelectric converter discharged as a source of passive cooling or heating.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
F28F 3/06 - Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being attachable to the element
H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
H01L 23/24 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel, at the normal operating temperature of the device
H01M 10/655 - Solid structures for heat exchange or heat conduction
H01M 10/6551 - Surfaces specially adapted for heat dissipation or radiation, e.g. fins or coatings
The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
A thermoelectric device may include first and second insulating substrates. An array of electrically conductive first metallizations may be positioned on one side of the first substrate, and an array of electrically conductive second metallizations may be positioned on a mating side of the second substrate. A plurality of thermoelectric elements may be positioned between the first and second substrates and interconnected together through the first and second metallizations in one of a square shaped network pattern or a delta shaped network pattern.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric device may include first and second insulating substrates. An array of electrically conductive first metallizations may be positioned on one side of the first substrate, and an array of electrically conductive second metallizations may be positioned on a mating side of the second substrate. A plurality of thermoelectric elements may be positioned between the first and second substrates and interconnected together through the first and second metallizations in one of a square shaped network pattern or a delta shaped network pattern.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric device may include a first substrate, a second substrate, and a plurality of thermoelectric elements positioned between the first and second substrates. The thermoelectric device may also include a first attachment material connecting each thermoelectric element of the plurality of thermoelectric elements to the first substrate, and a second attachment material connecting each thermoelectric element of the plurality of thermoelectric elements to the second substrate. The first attachment material may have a higher liquidus temperature than a liquidus temperature of the second attachment material.
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
31.
THERMOELECTRIC DEVICES WITH BLOCKED PHONON CONDUCTION
The present disclosure is related to a thermoelectric apparatus that may be configured as a heat pump or for power generation. The apparatus includes heat conducting layers and thermoelement disposed laterally along a conduit between hot and cold terminals. The conduit is configured to convey a counter-flow fluid for cooling the cold sides of the thermoelements while heat is conducted laterally between the hot and cold terminals.
An apparatus and method configured to provide electric power from a thermal source. The apparatus may include a thermoelectric generator and a heat source. The apparatus may include a fuel source. The heat source may be combustive or non-combustive. The apparatus may also include a thermal battery. The heat source may be configured to combust a hydrocarbon fuel to generated heat. The apparatus may include one or more thermal diodes and/or a heat sink to remove waste heat. The method may include converting thermal energy into electrical energy using the apparatus. The method may also include powering a light or other electrical load using the apparatus. The present disclosure includes a method for manufacturing the apparatus.
The present disclosure is related to an apparatus for generating electric power from selected wavelengths of electromagnetic radiation and a method of manufacture of said apparatus. The apparatus may include a selective wavelength absorber that is thermally coupled to a thermoelectric generator. The selective wavelength absorber may include alternating absorber and dielectric layers configured to absorb and reflect selected wavelengths of electromagnetic radiation. Absorbed electromagnetic radiation may be converted to heat energy for driving the thermoelectric generator. The method may include manufacturing the selective wavelength absorber, including depositing the alternating layers on a substrate that has been formed to receive the electromagnetic radiation at a selected angle or range of angles.
The present disclosure is related to an apparatus for transporting heat using a thermoelectric converter. The apparatus may include a thermoelectric converter, such as a thin- film. The apparatus may include a heating loop in thermal communication with a hot side of the thermoelectric converter and a cooling loop in thermal communication with a cold side of the thermoelectric converter. The thermoelectric converter may include a stack of alternating thermoelement and constricted contact layers. The thermoelectric converter may have a counter- flow fluid loop that moves a fluid against the temperature gradient of the thermoelectric converter. The apparatus may be configured to provide heating or cooling of a fluid, such as air or water. The apparatus may include a thermal storage medium configured as a thermal battery.
The present disclosure provides a method and a thermoelectric cooling apparatus for cooling a fluid. The thermoelectric cooling apparatus comprises one or more of thermoelectric devices, a hot sink, a cold sink, and a heat rejection apparatus which comprises condenser fins and a fan to attain a high figure of merit. The heat from the fluid is transferred to the hot sink and/or one or more heat pipes by the one or more thermoelectric devices. The heat from the one or more heat pipes is dissipated to the ambient through condenser fins and the fan.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
36.
IMPROVED THERMOELECTRIC ENERGY CONVERTERS AND MANUFACTURING METHOD THEREOF
The present disclosure provides a thermoelement with improved figure of merit for use in thermoelectric devices and a method of manufacturing the thermoelement. The thermoelement comprises metal layers, high power factor electrodes, a thermoelectric layer and a phonon blocking layer. The thickness of the thermoelectric layer is less than a thermalization length to achieve decoupling of phonons and electrons in the thermoelement. The phonon blocking layer reduces phonon conduction without significantly influencing electronic conduction. In an embodiment, the high power factor electrodes are made of materials with high Seebeck coefficient and high thermoelectric power factor that reduce thermal losses at interfaces of the thermoelement. The metal layers form outermost layers of the thermoelement and geometrically shaped to reduce heat flux in the thermoelement.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
The present disclosure provides a thermoelectric cooling system with improved performance. The thermoelectric cooling system comprises a thermoelectric cooling unit. The thermoelectric cooling unit comprises a thermoelectric device, heat pipes, condenser fins, a cold sink and a cold fan. The thermoelectric cooling unit can be easily assembled with a chamber which contains a fluid to be cooled. The thermoelectric cooling system comprises screws to attach the thermoelectric cooling unit to the chamber, and sealant rings to prevent heat leakage in the thermoelectric cooling system. Further, the present disclosure provides a thermoelectric cooling system with a freezer part and a refrigerator part. The freezer part encloses the cold sink and the cold fan. The freezer part is cooled by the thermoelectric device, and the refrigerator part is cooled by walls of the freezer part. Further, the present disclosure provides a thermoelectric cooling system for use as a wine cooler.
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
40.
IMPROVED THERMOELECTRIC ENERGY CONVERTERS WITH REDUCED INTERFACE INTERFACE LOSSES AND MANUFACTURING METHOD THEREOF
The present invention relates to a thermoelement for use in thermoelectric energy converters for power generation as well as cooling applications. The thermoelement includes a thermoelectric layer with a first side and a second side. Further, the thermoelement includes a first high power factor electrode and a second high power factor electrode. The first high power factor electrode is thermally and electrically attached to the first side of the thermoelectric layer and the second high power factor electrode is thermally and electrically attached to the second side of the thermoelectric layer. Furthermore, the thermoelement includes a plurality of metal layers. The plurality of metal layers are attached to the first high power factor electrode and the second high power factor electrode. A thermoelement comprises a plurality of micro thermoelements that are configured to reduce thermal density at the electrodes. The thermoelectric layer is hemispherical in shape.
In various embodiments of the present invention, a thermoelectric cooling device with a thermoelectric device, heat pipe and a heat sink is provided. The thermoelectric device is connected to a chamber through a metal standoff. The chamber contains a fluid that needs to be cooled. The metal standoff has a shape, e.g. a bevel shape, to minimize heat leakage into the fluid. The heat pipes are preferably connected to the thermoelectric device with a Thermal Interface Material (TIM). In one embodiment, the heat pipes are attached to the thermoelectric device through screws which have an insulating standoff so as to minimize heat leakage into the fluid. In another embodiment of the present invention, two stage thermoelectric cooling devices with multiple heat pipes and common heat sink are provided to cool the fluid.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
In various embodiments of the present invention, a thermoelectric cooling device with modular thermoelectric devices is provided to cool a fluid. A hot side of preferably each modular thermoelectric device is attached to a plate made of a metallic material which transfers the heat to a heat sink. In an embodiment, a heat pipe is embedded into the plate. The cold side of preferably each modular thermoelectric device is connected to a chamber containing the fluid through a metal standoff. The heat sink is connected to the modular thermoelectric devices by means of screws or conductive epoxy material.
In various embodiments of the present invention, a thermoelectric device is provided. The thermoelectric device includes one or more thermoelements that transfer heat across the ends of the thermoelectric device. A method for creating the thermoelectric device includes forming a metal substrate, and etching one or more surfaces of the metal substrate to form etched portions. The unetched flat portions on the metal substrate are referred to as mesa cores. Thereafter, thermoelectric films are deposited on the one or more surfaces of the metal substrate. The deposition of the thermoelectric films on the mesa cores results in the formation of a thermoelement.
H01L 35/02 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
C04B 35/547 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on sulfides or selenides
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
44.
Method and apparatus for switched thermoelectric cooling of fluids
A method and system for efficiently cooling a fluid is provided. A cooling system includes a first chamber containing a first fluid, and a second chamber connected to the first chamber and containing a second fluid. The cooling system further includes one or more thermoelectric devices for cooling the second fluid in the second chamber, and a first body that acts as a thermal diode. The first body enables unidirectional transfer of heat from the thermoelectric devices to the first fluid. Further, the cooling system can be installed with one or more phase change materials or heat pipes that enhance the cooling efficiency of the cooling system. The thermoelectric devices are switched on for a certain time period, after which they are switched off and on repeatedly in cycles, depending on the temperature of the second fluid.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
F25D 19/00 - Arrangement or mounting of refrigeration units with respect to devices
In various embodiments of the present invention, a thermoelectric cooling device with a thermoelectric device, heat pipe and a heat sink is provided. The thermoelectric device is connected to a chamber through a metal standoff. The chamber contains a fluid that needs to be cooled. The metal standoff has a shape, e.g. a bevel shape, to minimize heat leakage into the fluid. The heat pipes are preferably connected to the thermoelectric device with a Thermal Interface Material (TIM). In one embodiment, the heat pipes are attached to the thermoelectric device through screws which have an insulating standoff so as to minimize heat leakage into the fluid. In another embodiment of the present invention, two stage thermoelectric cooling devices with multiple heat pipes and common heat sink are provided to cool the fluid.
In various embodiments of the present invention, a device for converting incident radiation to electrical energy is provided. The device includes a Thermoelectric Generator (TEG) and a Photovoltaic Cell (PV) to convert the incident radiation to electrical energy. The device further includes a first component for focusing the incident radiation to the TEG and the PV. The incident radiation includes light waves of infrared wavelengths, and light waves of the visible light spectrum and Ultraviolet (UV) waves. The TEG converts the heat generated due to the light waves of infrared wavelength into electricity, and the PV converts energy of the light waves of the visible light spectrum and UV waves into electricity.
In various embodiments of the present invention, a thermoelectric device is provided. The thermoelectric device includes one or more thermoelements that transfer heat across the ends of the thermoelectric device. A method for creating the thermoelectric device includes forming a metal substrate, and etching one or more surfaces of the metal substrate to form etched portions. The unetched flat portions on the metal substrate are referred to as mesa cores. Thereafter, thermoelectric films are deposited on the one or more surfaces of the metal substrate. The deposition of the thermoelectric films on the mesa cores results in the formation of a thermoelement.
In various embodiments of the present invention, a thermoelectric device is provided. The thermoelectric device includes one or more thermoelements provided for transferring heat across the ends of the thermoelectric device. A method for making the thermoelectric device includes forming a metal substrate, and depositing one or more thermoelectric films on the metal substrate. Thereafter, one or more bumps are provided on one of the one or more thermoelectric films. Deposition of the one or more thermoelectric films on the metal substrate and the provision of the one or more bumps on the thermoelectric film result in the formation of a thermoelement.
A method and system for efficiently cooling a fluid is provided. A cooling system includes a first chamber containing a first fluid, and a second chamber connected to the first chamber and containing a second fluid. The cooling system further includes one or more thermoelectric devices for cooling the second fluid in the second chamber, and a first body that acts as a thermal diode. The first body enables unidirectional transfer of heat from the thermoelectric devices to the first fluid. Further, the cooling system can be installed with one or more phase change materials or heat pipes that enhance the cooling efficiency of the cooling system. The thermoelectric devices are switched on for a certain time period, after which they are switched off and on repeatedly in cycles, depending on the temperature of the second fluid.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
