Disclosed is a display device including: a first TFT implemented as a Low-Temperature Polycrystalline Silicon (LTPS) TFT; a second TFT implemented as an oxide TFT stacked on the LTPS TFT; and a light emitting device formed next to a structure in which the first TFT and the second TFT are stacked, in which one electrode of the first TFT is connected to a gate of the second TFT, and one electrode of the second TFT is connected to the light emitting device.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
2.
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes: a first-color light emitting diode (LED); thin film transistors (TFTs) and wires located on the first-color LED; a second-color LED located in a first area on the TFTs and the wires; a third-color LED located in a second area on the TFTs and the wires; a plurality of wires located between the first area and the second area; and a plurality of pads connected to the plurality of wires.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A display apparatus according to an embodiment includes a plurality of display modules including a display region where a plurality of pixels are positioned and a non-display region outside the display region, wherein, for two display modules adjacent among a plurality of display modules to provide a continuous display region, the display region of the first display module among two adjacent display modules and the non-display region of the second display module among the two adjacent display modules overlap each other in a plane view.
G09F 9/302 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
A display device according to an embodiment includes a substrate including a plurality of first pads for transmitting a gate signal, a plurality of second pad for transmitting a data signal, a plurality of third pads for transmitting a first power voltage, and a plurality of fourth pads for transmitting a second power voltage different from the first power voltage, into a display area; and a plurality of display modules each including first to fourth connection electrodes attached to the first to the fourth pads, respectively, a first transistor electrically connected to the third connection electrode and having an activation layer including a oxide semiconductor, a second transistor electrically connected to the first connection electrode and the second connection electrode, and a light emitting diode electrically connected to the first transistor and the fourth connection electrode.
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Disclosed is a display device including: a substrate including a plurality of first pads transmitting a gate signal, a plurality of second pads transmitting a data signal, a plurality of third pads transmitting a first power voltage, and a plurality of fourth pads transmitting a second power voltage different from the first power voltage within a display area; and a plurality of display modules, each of which includes a light emitting diode connected to first to fourth electrodes attached to the first to fourth pads, a first transistor connected to the first electrode and the second electrode, a second transistor connected to the third electrode, and a light emitting diode connected to the second transistor and the fourth electrode.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
6.
Sensor pixel circuit and sensor device comprising the same
A sensor pixel circuit may include: a photodiode to which a current flows according to incident light; a storage capacitor connected in parallel to the photodiode; a first transistor for connecting a bias voltage and the photodiode by a contact of a recognition object; and a second transistor for transmitting charges stored in the storage capacitor to a data line.
A sensor pixel according to a feature of the present invention includes: a detection electrode that forms capacitance with a recognition target; and a sensor pixel circuit that is connected to the detection electrode, generates a detection signal by using the detection electrode, and to which a DC voltage for resetting is supplied, wherein a coupling pulse is periodically applied to the recognition target that forms the capacitance with the detection electrode, and the detection signal may be changed according to the coupling pulse.
A smart card according to an exemplary embodiment of the present invention includes: a transparent substrate including a side contacting a finger of a user; a reflection layer separated from the transparent substrate, facing the transparent substrate, and including a metal material; a photosensor provided between the transparent substrate and the reflection layer, and sensing light reflected and input from the reflection layer; and a card substrate including an opaque material and covering the reflection layer.
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
9.
Fingerprint recognition sensor and display device having the same
A fingerprint recognition sensor according to an exemplary embodiment of the present invention includes: a photo sensor for sensing light that is diffuse-reflected from a finger of a user and incident on the photo sensor, or that is transmitted through the finger and incident on the photo sensor; a first matrix positioned on the photo sensor and including a first opening; a second matrix positioned on the first matrix and including a second opening; and a cover layer including one surface contacting the finger and positioned on the second matrix, wherein, from among light that is diffuse-reflected from the finger and incident on the cover layer or that is transmitted through the finger and incident on the cover layer, light having an angle, formed by a normal line on the one surface of the cover layer and a path of the light incident on the cover layer, that is greater than a critical angle, sequentially passes through the second opening and the first opening and is incident on the photo sensor.
There is provided a sensor pixel, including: a first transistor controlled depending on a mode selection voltage supplied to one end thereof; a second transistor including a gate connected to the other end of the first transistor; and a photoconductor connected to one end of the second transistor, wherein the sensor pixel operates in an optical mode when the first transistor is turned on, and the sensor pixel operates in a capacitive mode when the first transistor is turned off.
A fingerprint and image sensor includes a plurality of data lines, a plurality of scan lines, to which a plurality of scan signals is transferred, a plurality of reset scan lines, to which a plurality of reset scan signals is transferred, and a sensor panel, which is reset by a reset voltage, which is synchronized to a corresponding reset scan signal and is transferred, generates a pixel voltage according to light supplied during an exposure period, and includes a plurality of sensor pixels, which is synchronized to a corresponding scan signal and transfers the pixel voltage to a corresponding data line, and the exposure period may be a period from a time point, at which the corresponding reset scan signal is changed to an off-level, to a time point, at which the corresponding scan signal is changed to an on-level.
G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
The present invention relates to a shift register configured of a plurality of stages applying two clock signals among four clock signals that are sequentially generated as an input and applying a start signal as the input, wherein a first stage charges the start signal to a P-node and outputs a first output signal and a first carry signal by using the voltage of the P-node as a driving voltage when a first clock signal is applied, and resets the P-node when a second clock signal is applied, a second stage pre-charges a start signal input to the first stage to the P-node, charges the first carry signal to the P-node, outputs a second output signal and a second carry signal by using the voltage of the P-node as the driving voltage when the second clock signal is applied, and resets the P-node when a third clock signal is applied, and a third stage and following stages pre-charge a carry signal of the second previous stage to the P-node, charge the carry signal of the previous stage to the P-node, output the output signal and the carry signal by using the voltage of the P-node as the driving voltage when the input clock signal secondly input to the P-node is input, and reset the P-node that is charged depending on the clock signal generated after the input clock signal.
G11C 19/00 - Digital stores in which the information is moved stepwise, e.g. shift registers
G11C 19/28 - Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
The present invention relates to a capacitive fingerprint sensor, and the capacitive fingerprint sensor includes: a fingerprint sensor electrode for sensing a fingerprint of a human body; a first transistor of which a current or an output voltage is changed according to a voltage change of capacitive coupling formed by fingerprint capacitance formed when a fingerprint contacts the fingerprint sensor electrode and coupling capacitance formed for capacitive coupling; a fifth transistor that resets a gate electrode of the first transistor and applies capacitive coupling to the gate electrode of the first transistor through a coupling pulse; a second transistor of which a current or an output voltage is changed due to a difference in the current flowing through the first transistor and a gate voltage is maintained by a capacitor; a third transistor that resets a gate electrode of the second transistor; and a fourth transistor that controls a current flowing through the second transistor or an output voltage of the second transistor and transmits the controlled current or output voltage to a readout circuit.
Disclosed are a fingerprint recognition sensor including: a light source positioned while being spaced apart on one surface of the substrate and irradiating light toward the substrate; and a light direction switching layer positioned between the substrate and the light source, having a thickness-direction cross-section having a right-angled triangular shape, and including multiple protrusions constituted by a first surface in which the light irradiated from the light source is incident and refracted, a second surface contacting the one surface of the substrate, in which the refracted light is transmitted toward the substrate, and a third surface vertical to the one surface of the substrate, and a mobile display device having the same.
The present invention relates to a level shifter including: a first inverter applied with a first voltage and a second voltage of different polarities and operated depending on an input voltage to output a first inverting output signal; a second inverter applied with the first voltage and the second voltage and operated depending on the first inverting output signal to output a second inverting output signal having an opposite polarity to that of the first inverting output signal; a driver applied with a third voltage and a fourth voltage, including a first load transistor having the first inverting output signal as a gate input and a second load transistor having a fifth voltage as the gate input, and outputting an output voltage having an increased level with respect to the input voltage; and a bootstrap capacitor positioned between an output terminal of the second inverter and a gate electrode of the second load transistor to help the fifth voltage to be bootstrapped depending on the second inverting output signal, and an array apparatus including the same.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
An exemplary embodiment of the present invention provides an infrared image sensor including: a sensor pixel connected with a data lead-out line and a scan line disposed on a surface of a substrate; a wavelength converter positioned in the sensor pixel and disposed in an internal movement path of infrared rays, including an anti-Stokes material that absorbs infrared rays and converts them into visible rays to emit them; and a photosensor part positioned in the sensor pixel to sense the visible rays converted by the wavelength converter.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G01J 1/58 - Photometry, e.g. photographic exposure meter using luminescence generated by light
Disclosed is a fingerprint recognition sensor including: a backlight unit including a base layer positioned on one surface of a substrate and including a transparent material and a light source irradiating light to the inside of the base layer on one side of the base layer, in which light in which an incident angle on a surface facing the substrate is larger than a critical angle is transmitted toward the substrate; a cover layer spaced apart from the substrate and facing the other surface of the substrate; multiple sensor pixels defined by multiple scan lines and multiple data readout lines on the other surface of the substrate and positioned between the substrate and the cover layer; and multiple photo sensors positioned in the respective sensor pixels and sensing light transmitted on the base layer toward the substrate and total-reflected on a surface contacting a fingerprint of a user on the cover layer.
An oxide semiconductor transistor according to an exemplary embodiment of the present invention includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and the first gate electrode; an oxide semiconductor layer disposed on the gate insulating layer; an etch stopper layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode disposed on the oxide semiconductor layer and the etch stopper layer and spaced apart from each other.
H01L 23/535 - Arrangements for conducting electric current within the device in operation from one component to another including internal interconnections, e.g. cross-under constructions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
An optical fingerprint recognition sensor may improve internal light utilization efficiency and includes: a glass substrate; a protection layer that is positioned on the glass substrate; an active layer that is positioned above the glass substrate and in the protection layer; and a functional layer that is positioned in the protection layer and on the active layer and that includes a first transparent oxide layer and a first metal layer that are sequentially stacked.
The present invention relates to a flat plate type image sensor comprising: a backlight unit for emitting, at an object, at least any one light from among visible light, infrared light, and ultraviolet light; a visible light conversion unit for converting, into visible light, ultraviolet light reflected from the object; and a photosensor unit for sensing at least any one from among the visible light emitted from the backlight unit and reflected from the object, the infrared light, and the visible light converted in the visible light conversion unit.
The present invention relates to an LCD unit for a 3D printer, comprising: a liquid crystal for adjusting the amount of radiation of ultraviolet rays, which are incident from a UV backlight unit; a thin-film transistor for controlling the operation of the liquid crystal; a first wire grid polarizer substrate arranged on a surface on which the ultraviolet rays are incident from the UV backlight unit; and a second wire grid polarizer substrate arranged on a surface from which the ultraviolet rays are emitted through the liquid crystal.
The present invention relates to an oxide semiconductor transistor used as a pixel element of a display device and a method of manufacturing the same. An oxide semiconductor transistor according to the present invention comprises a substrate; a first gate electrode on the substrate; a first gate insulating film on the first gate electrode; an oxide semiconductor on the first gate insulating film; a source electrode and a drain electrode on the oxide semiconductor; a second gate insulating film on the oxide semiconductor; and a second gate electrode on the second gate insulating film, wherein the first gate electrode or the second gate electrode is formed to have a width smaller than a width between the source electrode and the drain electrode.
The present invention relates to an oxide semiconductor thin-film transistor and a manufacturing method therefor, and the method for manufacturing an oxide semiconductor thin-film transistor comprises: a first step of forming a gate electrode by depositing and patterning a gate layer on a substrate; a second step of depositing a gate insulating film on the gate electrode; a third step of depositing and patterning an oxide semiconductor on the gate insulating film; and a fourth step of processing the oxide semiconductor by using plasma including fluorine (F).
The present invention relates to a liquid crystal display having improved light efficiency, and comprises: a backlight unit for emitting light; and a quantum dot layer including a green quantum dot for converting light, emitted from the backlight unit, into light of a green wavelength, a red quantum dot for converting the emitted light into red light, and a blue quantum dot for converting the emitted light into blue light.
The present invention relates to a capacitive fingerprint sensor, comprising: a fingerprint sensing electrode for sensing a fingerprint of a human body; a first transistor which varies in the amount of current according to a voltage change of a capacitive coupling which is formed by coupling capacitance (Ccp) for the capacitive coupling and a fingerprint capacitance (Cfp) formed when a fingerprint contacts the fingerprint sensing electrode; a fifth transistor for resetting a gate electrode of the first transistor and for capacitively coupling the gate electrode of the first transistor with a coupling pulse; a second transistor which varies in the amount of current because of a difference in the current flowing across the first transistor and in which a gate voltage is maintained by capacitance (Cst); a third transistor for resetting the gate electrode of the second transistor; and a fourth transistor for controlling the current flowing across the second transistor and then transferring the current to a lead-out circuit unit.
The present invention relates to an optical fingerprint sensor which can comprise: a backlight unit for irradiating light; an uneven surface layer onto which the light from the backlight unit is irradiated; and a photosensor unit arranged between the backlight unit and the uneven surface layer so as to detect the light irradiated from the backlight unit and reflected from a user's fingerprint coming into contact with the uneven surface layer.
Provided is a fingerprint recognition sensor capable of sensing a fingerprint using optical and capacitive methods, the sensor including: a capacitive fingerprint sensing unit that includes a transistor (T2) in which a flowing current is changed depending on an output voltage of a fingerprint sensing electrode capable of sensing the humans fingerprint; and an optical fingerprint sensing unit which changes the flowing current in the transistor (T2) due to a difference in reverse current of a photodiode generated by light and shade depending on existence or non-existence of the fingerprint.
The present invention relates to an image sensor adopting a p-type oxide semiconductor and an organic photosensor, comprising: a thin film transistor formed on a substrate; an n-type oxide semiconductor connected to a data electrode of the thin film transistor; a p-type oxide semiconductor formed on the n-type oxide semiconductor; an organic photosensor unit formed on the p-type oxide semiconductor; and an electrode formed on the organic photosensor unit.
The present invention relates to an LED display device comprising: an LED formed on a substrate; a green quantum dot disposed on the LED to convert light irradiated from the LED into green wavelength light; a red quantum dot disposed on the LED to convert light irradiated from the LED into red light; and a thin film transistor formed on the substrate, wherein an electrode of the LED and a data electrode of the thin film transistor are connected to each other.
Provided is a transparent fingerprint recognizing sensor array, including: a pixel driving circuit formed on a substrate; an antistatic wiring disposed in an upper part of the pixel driving circuit; and a pixel electrode connected to the pixel driving circuit, wherein the pixel electrode is made of a transparent material or has an open formed in a center part thereof.
Provided is a thin film transistor liquid crystal display (TFT LCD) in which a capacitive touch sensor is embedded, the TFT LCD comprising: a touch sensor source follower TFT formed on a substrate; a first electrode connected to a gate electrode of the touch sensor source follower TFT; a touch sensor reset TFT including the first electrode; an insulator film formed on the first electrode; a second electrode formed on the insulator film; and a display switching TFT including the second electrode, wherein the second electrode is connected to a drain electrode of the display switching TFT; the touch sensor reset TFT and the gate electrode of the touch sensor source follower TFT share the first electrode; and the first electrode is connected to the gate electrode of the touch sensor source follower TFT.
G06F 3/045 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
The present invention relates to an optical fingerprint sensor which can comprise: a backlight unit for irradiating light; an uneven surface layer onto which the light from the backlight unit is irradiated; and a photosensor unit arranged between the backlight unit and the uneven surface layer so as to detect the light irradiated from the backlight unit and reflected from a user's fingerprint coming into contact with the uneven surface layer.
The present invention relates to an optical thin film transistor-type fingerprint sensor, which comprises a backlight unit for irradiating light, including at least one of a red light source, a green light source and an infrared light source; and a photo sensor unit for sensing light irradiated from the backlight unit and reflected by a fingerprint of a user.
Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
G01B 7/00 - Measuring arrangements characterised by the use of electric or magnetic techniques
H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
The present invention relates to an optical fingerprint sensor, comprising: a backlight unit which emits light; a first pinhole lens which has a hole, transmits the light emitted from the backlight unit and reflected from a fingerprint of a user in a position vertically symmetrical to the hole, and blocks other light except for the light transmitted therethrough; and a photo-sensor unit disposed under the first pinhole lens to sense light transmitted through the hole of the first pinhole lens.
The present invention relates to an image sensor to which an organic photo sensor is applied and a method of manufacturing the same. In accordance with one embodiment of the present invention the image sensor with the organic photo sensor may comprises a thin film transistor formed on a substrate; a first electrode connected to a data electrode of the thin film transistor; an organic photo sensor part deposited on the first electrode; and a second electrode deposited on the organic photo sensor part.
Provided is a display device of a thin film transistor with a touch sensor, the display device, including: a gate electrode formed on a first substrate; a gate insulating film formed on the first substrate and the gate electrode; and a sensing space part formed in an inner part of the gate insulating film.
Provided is a fingerprint recognition sensor capable of sensing a fingerprint using optical and capacitive methods, the sensor including: a capacitive fingerprint sensing unit that includes a transistor (T2) in which a flowing current is changed depending on an output voltage of a fingerprint sensing electrode capable of sensing the humans fingerprint; and an optical fingerprint sensing unit which changes the flowing current in the transistor (T2) due to a difference in reverse current of a photodiode generated by light and shade depending on existence or non-existence of the fingerprint.
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
Provided is a transparent fingerprint recognizing sensor array, including: a pixel driving circuit formed on a substrate; an antistatic wiring disposed in an upper part of the pixel driving circuit; and a pixel electrode connected to the pixel driving circuit, wherein the pixel electrode is made of a transparent material or has an open formed in a center part thereof.
Provided are an image sensor for an X-ray and a method of manufacturing the same, the image sensor for the X-ray, including: a semiconductor active layer formed on an insulating substrate; a gate insulating film on the semiconductor active layer; a gate electrode formed on the gate insulating film; an interlayer insulating film which is formed on the gate electrode and in which a first via hole is formed; a source electrode formed on the first via hole; a drain electrode formed on the first via hole; a first electrode formed to be connected to the source electrode or the drain electrode; and a photo diode formed on the first electrode.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
41.
THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY HAVING CAPACITIVE TOUCH SENSOR EMBEDDED THEREIN
The present invention relates to a thin film transistor liquid crystal display (TFT LCD) having a capacitive touch sensor embedded therein. The TFT LCD having a touch sensor embedded therein includes: a touch sensor source follower TFT formed on a substrate; a first electrode connected to the gate electrode of the touch sensor source follower TFT; a touch sensor reset TFT including the first electrode; an insulation film formed on the first electrode; a second electrode formed on the insulation film; and a display switching TFT including the second electrode, wherein the second electrode is connected to the drain electrode of the display switching TFT, the first electrode is shared between the touch sensor reset TFT and the touch sensor source follower TFT, and the gate electrode of the touch sensor source follower TFT is connected to the first electrode.
The capacitive fingerprint sensor according to the exemplary embodiments of the present invention includes: a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 in which the amount of currents flowing therethrough changes depending on an output voltage of the fingerprint sensing electrode Cfp; a second transistor T2 in which the amount of currents flowing therethrough changes due to a difference between the currents flowing through the first transistor T1; and a third transistor T3 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal.
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
The present invention relates to a capacitive fingerprint sensor. The capacitive fingerprint sensor may firstly sense a difference in capacitance and amplify a signal corresponding to the sensed difference value and then secondly amplify the amplified signal again in a pixel to improve sensing sensitivity. Thus, an upper protection film of the sensor may be increased in thickness due to the improvement of the sensing sensitivity, to thereby have a strong tolerance of electrostatic discharge (ESD) and physical shocks. The capacitive fingerprint sensor includes: a fingerprint sensing electrode Cfp for sensing a fingerprint of the human body; a first transistor T1 in which an amount of current flowing therethrough is changed according to an output voltage of the fingerprint sensing electrode; a second transistor T2 in which an amount of current flowing therethrough is changed according to a difference in current flowing through the first transistor T1; and a third transistor T3 by which a gate electrode of the first transistor T1 is reset, and the gate electrode of the first transistor T1 is capacitively coupled through a pulse signal.
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
G06K 9/46 - Extraction of features or characteristics of the image
Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity.
G06K 9/46 - Extraction of features or characteristics of the image
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
patents
