A transport layer arrangement for the anode of a proton exchange membrane water electrolyzer, where the transport layer arrangement comprises a porous layer and a plurality of elongated nanostructures. Each elongated nanostructure is attached to a first surface of the porous layer at one end of the elongated nanostructure. The plurality of elongated nanostructures is covered by a coating comprising a first layer, which in turn comprises a non-noble metal oxide.
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
C25B 11/069 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of at least one single element and at least one compoundElectrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of two or more compounds
2.
VERTICAL NANOSTRUCTURE ENERGY STORAGE DEVICE WITH DIVIDED TOP ELECTRODE LAYER, AND MANUFACTURING METHOD
An energy storage device (11) comprising a first bottom electrode layer part (35), and a second bottom electrode layer part (37)conductively separated from the first bottom electrode layer part (35); a first plurality of conductive vertical nanostructures (39) on the first bottom electrode layer part (35); a second plurality of conductive vertical nanostructures (39) on the second bottom electrode layer part (37); a conduction controlling layer (41) conformally covering each nanostructure (39); a first top electrode layer part (45) conductively separated from the first bottom electrode (33) and arranged directly on a portion of the second bottom electrode layer part; and a second top electrode layer part (47) conductively separated from the second bottom electrode layer part (37) and arranged directly on a portion of the first bottom electrode layer part (35).
H01G 4/38 - Multiple capacitors, i.e. structural combinations of fixed capacitors
H01G 4/40 - Structural combinations of fixed capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
An energy storage device (11) comprising: a substrate (27) having a first level (31), a second level (33) higher than the first level (31), and a surface (35) connecting the first level (31) and the second level (33); a plurality of nanostructures (37) vertically extending from the first level (31) of the substrate (27); a first electrode layer (39) covering each nanostructure in the plurality of nanostructures (37), the surface (35) connecting the first level (31) and the second level (33); a conduction controlling layer (41) conformally covering the first electrode layer (39); a second electrode layer (43) covering the conduction controlling layer (41); a first contact pad (21) conductively connected to the first electrode layer (39) on the second level (33) of the substrate (27); and a second contact pad (23) conductively connected to the second electrode layer (43).
H01G 4/232 - Terminals electrically connecting two or more layers of a stacked or rolled capacitor
H01G 11/08 - Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
H01G 4/40 - Structural combinations of fixed capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
4.
A SEPARATOR ELEMENT WITH A COATING COMPRISING NANOSTRUCTURES
A separator element for an electrochemical cell, the separator element comprising a conductive substrate and a coating applied to the conductive substrate. The coating comprises a first part and a second part, wherein the first part comprises a basal layer extending along a surface of the conductive substrate and the second part comprises a plurality of nanostructures extending out from the surface of the conductive substrate.
An electrochemical cell comprising a layered structure, the layered structure comprising at least a first layer and a second layer. The first layer and the second layer are arranged adjacent to each other and form a first interface, wherein the first interface comprises a first plurality of elongated nanostructures connected to a first surface of the first layer facing the second layer, and a second plurality of elongated nanostructures connected to a second surface of the second layer facing the first layer. The first plurality of elongated nanostructures and the second plurality of elongated nanostructures are mechanically entangled.
H01M 8/0228 - Composites in the form of layered or coated products
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
An electrode (200) for a proton exchange membrane water electrolyzer, the electrode (200) comprising a plurality of elongated nanostructures (220) arranged on a substrate (210). The elongated nanostructures (220) are attached to the substrate (210) at a respective first end and extend along a direction perpendicular to a plane of extension of the substrate (210). The plurality of elongated nanostructures (220) are coated with a conformal protective layer (230), and a catalyst layer (240) is arranged on the conformal protective layer. The catalyst layer (240) comprises a plurality of nanoparticles (241), the nanoparticles (241) forming a continuous coating on at least a part of the surface of the plurality of elongated nanostructures (220).
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
C25B 11/02 - ElectrodesManufacture thereof not otherwise provided for characterised by shape or form
C25B 11/081 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the element being a noble metal
C25D 9/12 - Electrolytic coating other than with metals with inorganic materials by cathodic processes on light metals
C25B 11/093 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of at least one catalytic element and at least one catalytic compoundElectrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of two or more catalytic elements or catalytic compounds at least one noble metal or noble metal oxide and at least one non-noble metal oxide
C25B 11/097 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of at least one catalytic element and at least one catalytic compoundElectrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of two or more catalytic elements or catalytic compounds comprising two or more noble metals or noble metal alloys
7.
A SEPARATOR ELEMENT ARRANGEMENT FOR AN ELECTROCHEMICAL CELL COMPRISING A NANOSTRUCTURE
A separator element arrangement for an electrochemical cell is presented. The separator element arrangement comprises a separator element and a diffusion layer arranged adjacent to the separator element. The separator element comprises a plurality of elongated nanostructures. At least some of the elongated nanostructures are arranged to connect the separator element to the diffusion layer by extending into the diffusion layer.
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
C25B 13/02 - DiaphragmsSpacing elements characterised by shape or form
C25B 13/05 - DiaphragmsSpacing elements characterised by the material based on inorganic materials
H01M 8/0245 - Composites in the form of layered or coated products
H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
An electrolyzer comprising a first and a second electrode and an ion exchange membrane arranged in-between the first and the second electrode. Each electrode comprises an electrically conductive element. At least one of the electrodes also comprises a catalyst structure comprising an electrically conductive material. The electrolyzer also comprises at least one feeding means, wherein the feeding means is arranged to introduce a variable electromagnetic field into the electrolyzer. The variable electromagnetic field is arranged to create a temperature gradient in the electrolyzer by increasing a temperature of the catalyst structure.
An electrolyzer comprising a first and a second electrode and an ion exchange membrane arranged in-between the first and the second electrode. Each electrode comprises a conductive element and a catalyst layer and at least one catalyst layer comprises a catalyst structure. The catalyst structure comprises a plurality of elongated nanostructures and a plurality of electrocatalyst particles attached to the plurality of elongated nanostructures, wherein the plurality of elongated nanostructures is arranged to control a position of the plurality of electrocatalyst particles relative to the ion exchange membrane.
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
A transport layer arrangement (200) for the anode of a proton exchange membrane water electrolyzer (100), where the transport layer arrangement (200) comprises a porous layer (210) and a plurality of elongated nanostructures (220). Each elongated nanostructure (220) is attached to a first surface of the porous layer (210) at one end of the elongated nanostructure. The plurality of elongated nanostructures (220) is covered by a coating (230) comprising a first layer (321), which in turn comprises a non-noble metal oxide.
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
C25B 11/069 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of at least one single element and at least one compoundElectrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of two or more compounds
C25B 11/054 - Electrodes comprising electrocatalysts supported on a carrier
An image sensor comprising an image sensor layer having a plurality of image sensor layer contact pads; and a plurality of photo-sensitive elements, each being coupled to a respective image sensor layer contact pad; and a capacitor layer having: a plurality of first capacitor contact structures, each being constituted by a capacitor layer top contact pad bonded to a respective image sensor layer contact pad of the image sensor layer; a plurality of second capacitor contact structures; and a plurality of capacitors, embedded in a first dielectric material, each capacitor including at least one electrically conductive vertical nanostructure electrically conductively connected to one of a respective first capacitor contact structure and a respective second capacitor contact structure, and conductively separated from the other one of the respective first capacitor contact structure and the respective second capacitor contact structure by a layer of a second dielectric material.
An electronic component package, comprising a package part comprising a plurality of contact pads on a first surface of the package part; a passive component having a first surface including contact pads bonded to a first set of contact pads in the plurality of contact pads and a second surface spaced apart from the first surface; a plurality of connecting structures for external electrical connection of the electronic component package; and an RDL stack interconnecting a second set of contact pads in the plurality of contact pads with the connecting structures for external electrical connection, the RDL stack comprising: a first conductor layer; a second conductor layer; and a dielectric layer arranged there between and comprising vias for conductively connecting the first conductor layer and the second conductor layer.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
13.
A SEPARATOR ELEMENT WITH A COATING COMPRISING NANOSTRUCTURES
A separator element (300) for an electrochemical cell (100, 200), the separator element (300) comprising a conductive substrate (310) and a coating (320) applied to the conductive substrate. The coating comprises a first part and a second part, wherein the first part comprises a basal layer (321) extending along a surface of the conductive substrate (310) and the second part comprises a plurality of nanostructures (322) extending out from the surface of the conductive substrate (310).
H01M 8/0245 - Composites in the form of layered or coated products
H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
C25B 13/05 - DiaphragmsSpacing elements characterised by the material based on inorganic materials
C25B 13/02 - DiaphragmsSpacing elements characterised by shape or form
14.
Metal-insulator-metal (MIM) energy storage device with layered stack and manufacturing method
A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.
An electrochemical cell comprising a layered structure, the layered structure comprising at least a first layer (510) and a second layer (520). The first layer and the second layer are arranged adjacent to each other and form a first interface, wherein the first interface comprises a first plurality of elongated nanostructures (511) connected to a first surface of the first layer (510) facing the second layer (520), and a second plurality of elongated nanostructures (521) connected to a second surface of the second layer (520) facing the first layer (510). The first plurality of elongated nanostructures (511) and the second plurality of elongated nanostructures (521) are mechanically entangled.
An electronic system comprising a substrate with a substrate conductor pattern including substrate pads; a semiconductor component with active circuitry, and component pads coupled to the active circuitry of the semiconductor component and connected to the substrate pads of the substrate; a power source interface for receiving power from a power source; and a power distribution network for distributing power from the power source interface to the active circuitry of the semiconductor component. The power distribution network includes a first capacitor realized by conductive structures comprised in the semiconductor component, the first capacitor being coupled to a first component pad and a second component pad of the semiconductor component; a second capacitor arranged between the substrate and the semiconductor component, the second capacitor being coupled to the first component pad and the second component pad of the component package; and a power grid portion of the substrate conductor pattern.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
A separator element arrangement (300) for an electrochemical cell is presented. The separator element arrangement comprises a separator element (310) and a diffusion layer (320) arranged adjacent to the separator element (310). The separator element comprises a plurality of elongated nanostructures (311). At least some of the elongated nanostructures are arranged to connect the separator element (310) to the diffusion layer (320) by extending into the diffusion layer.
An electrolyzer (100) comprising a first (110) and a second (120) electrode and an ion exchange membrane (130) arranged in-between the first and the second electrode. Each electrode comprises an electrically conductive element (111, 121). At least one of the electrodes also comprises a catalyst structure (140) comprising an electrically conductive material. The electrolyzer also comprises at least one feeding means (160, 320, 330, 410), wherein the feeding means (160, 320, 330, 410) is arranged to introduce a variable electromagnetic field into the electrolyzer (100). The variable electromagnetic field is arranged to create a temperature gradient in the electrolyzer (100) by increasing a temperature of the catalyst structure (140).
An electrolyzer (100, 400) comprising a first and a second electrode and an ion exchange membrane (130, 430) arranged in-between the first and the second electrode. Each electrode comprises a conductive element (113, 123, 413, 423) and a catalyst layer (111, 121) and at least one catalyst layer comprises a catalyst structure (200). The catalyst structure comprises a plurality of elongated nanostructures (221) and a plurality of electrocatalyst particles (222) attached to the plurality of elongated nanostructures (221), wherein the plurality of elongated nanostructures (221) is arranged to control a position of the plurality of electrocatalyst particles (222) relative to the ion exchange membrane (130, 430).
C25B 1/04 - Hydrogen or oxygen by electrolysis of water
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
C25B 11/052 - Electrodes comprising one or more electrocatalytic coatings on a substrate
C25B 11/054 - Electrodes comprising electrocatalysts supported on a carrier
C25B 11/069 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of at least one single element and at least one compoundElectrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of two or more compounds
An electronic component package, comprising a package part comprising a plurality of contact pads on a first surface of the package part; a passive component having a first surface including contact pads bonded to a first set of contact pads in the plurality of contact pads on the first surface of the package part, and a second surface spaced apart from the first surface; a plurality of connecting structures for external electrical connection of the electronic component package; and an RDL stack interconnecting a second set of contact pads in the plurality of contact pads on the first surface of the package part with the connecting structures for external electrical connection, the RDL stack comprising: a first conductor layer; a second conductor layer; and a dielectric layer arranged between the first conductor layer and the second conductor layer and comprising vias for conductively connecting the first conductor layer and the second conductor layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
21.
Discrete metal-insulator-metal (MIM) energy storage component and manufacturing method
A discrete metal-insulator-metal (MIM) energy storage component, the energy storage component comprising: a MIM-arrangement comprising: a first electrode layer; a plurality of conductive nanostructures grown from the first electrode layer; a conduction controlling material covering each nanostructure in the plurality of conductive nanostructures and the first electrode layer uncovered by the conductive nanostructures; and a second electrode layer covering the conduction controlling material; a first connecting structure for external electrical connection of the capacitor component; a second connecting structure for external electrical connection of the capacitor component; and an electrically insulating encapsulation material at least partly embedding the MIM-arrangement.
H01G 11/36 - Nanostructures, e.g. nanofibres, nanotubes or fullerenes
H01G 11/56 - Solid electrolytes, e.g. gelsAdditives therein
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 50/11 - Primary casingsJackets or wrappings characterised by their shape or physical structure having a chip structure, e.g. micro-sized batteries integrated on chips
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
An image sensor comprising an image sensor layer having a plurality of image sensor layer contact pads; and a plurality of photo-sensitive elements, each being coupled to a respective image sensor layer contact pad; and a capacitor layer having: a plurality of first capacitor contact structures, each being constituted by a capacitor layer top contact pad bonded to a respective image sensor layer contact pad of the image sensor layer; a plurality of second capacitor contact structures; and a plurality of capacitors, embedded in a first dielectric material, each capacitor including at least one electrically conductive vertical nanostructure electrically conductively connected to one of a respective first capacitor contact structure and a respective second capacitor contact structure, and conductively separated from the other one of the respective first capacitor contact structure and the respective second capacitor contact structure by a layer of a second dielectric material.
A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction- controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd- numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
B82B 1/00 - Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82Y 40/00 - Manufacture or treatment of nanostructures
24.
ELECTRONIC SYSTEM WITH POWER DISTRIBUTION NETWORK INCLUDING CAPACITOR COUPLED TO COMPONENT PADS
An electronic system comprising a substrate with a substrate conductor pattern including substrate pads; a semiconductor component with active circuitry, and component pads coupled to the active circuitry of the semiconductor component and connected to the substrate pads of the substrate; a power source interface for receiving power from a power source; and a power distribution network for distributing power from the power source interface to the active circuitry of the semiconductor component. The power distribution network includes a first capacitor realized by conductive structures comprised in the semiconductor component, the first capacitor being coupled to a first component pad and a second component pad of the semiconductor component; a second capacitor arranged between the substrate and the semiconductor component, the second capacitor being coupled to the first component pad and the second component pad of the component package; and a power grid portion of the substrate conductor pattern.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
B82B 1/00 - Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82Y 40/00 - Manufacture or treatment of nanostructures
H03K 19/003 - Modifications for increasing the reliability
An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures; a conduction controlling material embedding the nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/00 - Details of semiconductor or other solid state devices
A semiconductor assembly, comprising: a first semiconductor die including processing circuitry and pads, said first semiconductor die having a first surface and a second surface opposite the first surface; a second semiconductor die including memory circuitry and pads, said second semiconductor die being arranged on one of the first surface and the second surface of said first semiconductor die, and pads of said second semiconductor die being coupled to pads of said first semiconductor die; and at least a first capacitor having terminals, said first capacitor being arranged on one of the first surface and the second surface of said first semiconductor die and the terminals of said capacitor being coupled to pads of said first semiconductor die.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
B82B 1/00 - Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82Y 40/00 - Manufacture or treatment of nanostructures
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass
28.
DISCRETE METAL-INSULATOR-METAL (MIM) ENERGY STORAGE COMPONENT AND MANUFACTURING METHOD
A discrete metal-insulator-metal (MIM) energy storage component, the energy storage component comprising: a MIM-arrangement comprising: a first electrode layer; a plurality of conductive nanostructures grown from the first electrode layer; a conduction controlling material covering each nanostructure in the plurality of conductive nanostructures and the first electrode layer uncovered by the conductive nanostructures; and a second electrode layer covering the conduction controlling material;a first connecting structure for external electrical connection of the capacitor component;a second connecting structure for external electrical connection of the capacitor component; and an electrically insulating encapsulation material at least partly embedding the MIM-arrangement.
H01G 11/36 - Nanostructures, e.g. nanofibres, nanotubes or fullerenes
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
B82B 1/00 - Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82Y 40/00 - Manufacture or treatment of nanostructures
29.
Energy storing interposer device and manufacturing method
An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures; a conduction controlling material embedding the nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/00 - Details of semiconductor or other solid state devices
A nanostructure energy storage device comprising: at least a first plurality of conductive nanostructures provided on an electrically insulating surface portion of a substrate; a conduction controlling material embedding each nanostructure in said first plurality of conductive nanostructures; a first electrode connected to each nanostructure in said first plurality of nanostructures; and a second electrode separated from each nanostructure in said first plurality of nanostructures by said conduction controlling material, wherein said first electrode and said second electrode are configured to allow electrical connection of said nanostructure energy storage device to an integrated circuit.
H01G 4/35 - Feed-through capacitors or anti-noise capacitors
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures;a conduction controlling material embedding the nanostructures;a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01G 4/35 - Feed-through capacitors or anti-noise capacitors
33.
Interposer with a nanostructure energy storage device
An interposer device comprising an interposer substrate; a plurality of conducting vias extending through the interposer substrate; a conductor pattern on the interposer substrate, and a nanostructure energy storage device. The nanostructure energy storage device comprises at least a first plurality of conductive nanostructures formed on the interposer substrate; a conduction controlling material embedding each nanostructure in the first plurality of conductive nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material, wherein the first electrode and the second electrode are configured to allow electrical connection of the nanostructure energy storage device to the integrated circuit.
H01G 4/35 - Feed-through capacitors or anti-noise capacitors
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
35.
INTERPOSER WITH A NANOSTRUCTURE ENERGY STORAGE DEVICE
An interposer device comprising an interposer substrate;a plurality of conducting vias extending through the interposer substrate;a conductor pattern on the interposer substrate, and a nanostructure energy storage device. The nanostructure energy storage device comprises at least a first plurality of conductive nanostructures formed on the interposer substrate;a conduction controlling material embedding each nanostructure in the first plurality of conductive nanostructures;a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material,wherein the first electrode and the second electrode are configured to allow electrical connection of the nanostructure energy storage device to the integrated circuit.
H01G 4/35 - Feed-through capacitors or anti-noise capacitors
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
36.
Deposition and selective removal of conducting helplayer for nanostructure processing
A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
A method for manufacturing a plurality of nanostructures (101) on a substrate (102). The method comprises the steps of: depositing a bottom layer (103) on an upper surface of the substrate (102), the bottom layer (103) comprising grains having a first average grain size; depositing a catalyst layer (104) on an upper surface of the bottom layer (103), the catalyst layer (104) comprising grains having a second average grain size different from the first average grain size, thereby forming a stack of layers comprising the bottom layer (103) and the catalyst layer (104); heating the stack of layers to a temperature where nanostructures (101) can form; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer (104).
D01F 9/127 - Carbon filamentsApparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours
B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
38.
Connecting and bonding adjacent layers with nanostructures
An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
39.
Connecting and bonding adjacent layers with nanostructures
An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
A method for manufacturing a plurality of nanostructures (101) on a substrate (102). The method comprises the steps of: depositing a bottom layer (103) on an upper surface of the substrate (102), the bottom layer (103) comprising grains having a first average grain size; depositing a catalyst layer (104) on an upper surface of the bottom layer (103), the catalyst layer (104) comprising grains having a second average grain size different from the first average grain size, thereby forming a stack of layers comprising the bottom layer (103) and the catalyst layer (104); heating the stack of layers to a temperature where nanostructures (101) can form; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer (104).
Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.
B29C 59/02 - Surface shaping, e.g. embossingApparatus therefor by mechanical means, e.g. pressing
B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 40/00 - Manufacture or treatment of nanostructures
42.
HIGH ASPECT RATIO TEMPLATE FOR LITHOGRAPHY, METHOD OF MAKING THE SAME TEMPLATE AND USE OF THE TEMPLATE FOR PERFORATING A SUBSTRATE AT NANOSCALE
Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
43.
Deposition and selective removal of conducting helplayer for nanostructure processing
A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
45.
Connecting and bonding adjacent layers with nanostructures
An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
B82B 1/00 - Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82B 3/00 - Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
The present invention provides for photonic crystals comprising nanostructures grown on a conducting or insulating substrate, and a method of making the same. The photonic crystals can be used in components such as artificial photonic crystals for photonic devices and circuits.
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
H01L 27/095 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
patents
