The purpose of the present invention is to provide, for example, a stuffed noodle strip food which, even when microwaved prior to eating, has a good texture of wrapper seam, and in which remnants of the wrapper in the mouth are reduced. The present invention relates to, for example, a stuffed noodle strip food for microwave heating that comprises a wrapper in which a seam is formed, wherein (i) the dielectric loss tangent of the wrapper at an applied frequency of 2.45 GHz is 0.4-0.7 and (ii) stress measured by using a texture analyzer to compress the seam on the wrapper by 20 mm, at 25°C, via a spherical plunger which has a diameter of 5 mm, at a compression speed of 1 mm/sec is 50-250 gf.
A23L 35/00 - Foods or foodstuffs not provided for in groups Preparation or treatment thereof
A23L 5/10 - General methods of cooking foods, e.g. by roasting or frying
A23L 7/109 - Types of pasta, e.g. macaroni or noodles
2.
METHOD FOR PRODUCING INTERMEDIATE FOR PRODUCING ENDOTOXIN DETECTION REAGENT, METHOD FOR PRODUCING ENDOTOXIN DETECTION REAGENT, AND ENDOTOXIN DETECTION REAGENT
This is a method for producing an intermediate for producing an endotoxin detection reagent wherein the intermediate is a compound represented by formula (3) for producing an endotoxin detection reagent. This method for producing an intermediate for producing an endotoxin detection reagent comprises: a step for obtaining a reaction product that contains a compound represented by formula (3); and a step for reprecipitating the compound represented by formula (3) using a poor solvent for the compound represented by formula (3). (3): R1T1R2X. In formula (3), R1is a group that contains conjugated multiple bonds, R2is an alkylene group having 1 to 10 carbon atoms, T1 is a linking group, and X is a leaving group.
C07C 41/40 - SeparationPurificationStabilisationUse of additives by change of physical state, e.g. by crystallisation
C07C 41/16 - Preparation of ethers by reaction of esters of mineral or organic acids with hydroxy or O-metal groups
C07C 43/225 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
C07C 227/18 - Preparation of compounds containing amino and carboxyl groups bound to the same carbon skeleton from compounds containing already amino and carboxyl groups or derivatives thereof by reactions involving amino or carboxyl groups, e.g. hydrolysis of esters or amides, by formation of halides, salts or esters
C07C 229/16 - Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings to carbon atoms of hydrocarbon radicals substituted by amino or carboxyl groups, e.g. ethylenediamine-tetra-acetic acid, iminodiacetic acids
C07D 213/36 - Radicals substituted by singly-bound nitrogen atoms
An analysis device according to the present invention includes a membrane filtration device that comprises a microfiltration membrane or an ultrafiltration membrane, a flow injection system that analyzes sample water from the reaction between a substance to be detected that is included in the sample water and a reagent that is included in carrier water and reacts with the substance to be detected, first piping through which concentrated water in which the substance to be detected has been concentrated by the membrane filtration device flows to the flow injection system as the sample water, and a sample water pump that pressurizes the sample water at the first piping. The piping inner diameter of an outlet pipe of the flow injection system is smaller than the piping inner diameter of the first piping.
The present invention provides a modifier for solid electrolytes that comprises: an ionic compound which comprises a pyrrolidinium cation and an anion including fluorine or a cyano group; a borate ester which has a polymerizable functional group; and a lithium salt.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01G 11/56 - Solid electrolytes, e.g. gelsAdditives therein
TEST SUBSTANCE DETECTION METHOD, DETECTION AGENT COMPOSITION, DETECTION APPARATUS, PURIFIED WATER PRODUCTION FACILITY, INJECTION WATER PRODUCTION FACILITY, PURIFIED WATER PRODUCTION METHOD AND INJECTION WATER PRODUCTION METHOD
A test substance detection method includes: a step A in which a sample containing a test substance and water, a compound having a structure in which a response site and a recognition site are connected via a spacer, and a surfactant are added; and a step B in which the recognition site and the test substance interact and a response at the response site arising from the interaction is detected. Further, also provided are: a purified water production method and an injection water production method both using the foregoing; a detection agent composition containing a compound represented by Formula (1) and a surfactant; and a detection apparatus, a purified water production facility, and an injection water production facility, all using the foregoing.
B01D 15/36 - Selective adsorption, e.g. chromatography characterised by the separation mechanism involving ionic interaction, e.g. ion-exchange, ion-pair, ion-suppression or ion-exclusion
Provided is a semiconductor optical element array comprising: a semiconductor substrate; a mask layer that is disposed on a principal surface of the semiconductor substrate, and that has an opening; a nano-column that is a columnar crystal of a group-III nitride semiconductor, and that extends in a thickness direction from the semiconductor substrate through the opening; a light-emitting layer that is disposed at a distal end of the nano-column; and a covering semiconductor layer that covers the light-emitting layer, and that includes a semiconductor. The semiconductor optical element array has a pixel that includes a plurality of the nano-columns. In the pixel, the sizes of the nano-columns either increase in a stepwise manner or continuously, or decrease in a stepwise manner or continuously from the center toward the outer periphery.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Provided is a vulcanization method capable of uniformly vulcanizing a rubber composition by microwave irradiation. The present invention is a vulcanization method for vulcanizing a rubber composition that contains a diene rubber and carbon black by irradiation with microwaves, said vulcanization method being characterized in that the frequency of the microwaves irradiating the rubber composition is changed by only a frequency width selected from the range of more than 0 Hz but not more than 1000 Hz each time a time interval selected from the range of more than 0 μsec but not more than 100 μsec elapses.
ST. MARIANNA UNIVERSITY SCHOOL OF MEDICINE (Japan)
SOPHIA SCHOOL CORPORATION (Japan)
Inventor
Matsumoto, Nobuyuki
Suzuki, Yumiko
Abstract
The present invention relates to a compound represented by the formula (1) or a pharmaceutically acceptable salt thereof. In the formula (1), R1 to R3 are each independently a predetermined amino group or a predetermined amide group, or a group represented by the formula (2), and at least one of R1 to R3 is a group represented by the formula (2).
The present invention relates to a compound represented by the formula (1) or a pharmaceutically acceptable salt thereof. In the formula (1), R1 to R3 are each independently a predetermined amino group or a predetermined amide group, or a group represented by the formula (2), and at least one of R1 to R3 is a group represented by the formula (2).
C07H 15/18 - Acyclic radicals, substituted by carbocyclic rings
9.
METHOD OF DETECTING ENDOTOXIN, ENDOTOXIN DETECTION DEVICE, PURIFIED WATER PRODUCTION FACILITY, INJECTION WATER PRODUCTION FACILITY, METHOD OF PRODUCING PURIFIED WATER AND METHOD OF PRODUCING INJECTION WATER
A method of detecting an endotoxin of detecting an endotoxin from a test subject sample using a fluorescent substance having a structure in which a fluorescent site and a recognition site are connected by a spacer, wherein the recognition site recognizes a specific site of a molecular structure of an endotoxin.
A light-emitting device that includes a substrate, and at least one column portion, wherein the column portion includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is provided between the substrate and the light-emitting layer, the light-emitting layer includes a first well layer, and a barrier layer, the barrier layer includes a first layer provided between the first semiconductor layer and the first well layer, and the first layer has a cubic crystal structure.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
11.
ENDOTOXIN DETECTION METHOD, ENDOTOXIN DETECTION DEVICE, EQUIPMENT FOR PRODUCING PURIFIED WATER, EQUIPMENT FOR PRODUCING INJECTION WATER, METHOD FOR PRODUCING PURIFIED WATER, AND METHOD FOR PRODUCING INJECTION WATER
An endotoxin detection method, according to the present invention, for detecting an endotoxin from a sample under test by using a fluorescent substance that has a structure in which a fluorescence site which is a condensed polycyclic aromatic hydrocarbon or a derivative thereof and a recognition site for recognizing the specific site on the molecular structure of the endotoxin have been linked with a spacer.
A light-emitting device includes a substrate, a laminated structure having a plurality of column portions, and an electrode provided on a side of the laminated structure opposite to the substrate. Each of the plurality of column portions includes a light-emitting layer. The electrode is provided with a plurality of first holes. The plurality of column portions form a first photonic crystal. The electrode forms a second photonic crystal. The first photonic crystal and the second photonic crystal are optically coupled to each other.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
A light-emitting device includes a substrate, a laminated structure having a plurality of column portions, and an electrode provided on a side of the laminated structure opposite from the substrate. Each of the plurality of column portions includes a light-emitting layer. The electrode is provided with a plurality of first holes. A diameter of each of the plurality of first holes is less than a wavelength of light generated by the light-emitting layer. A distance between adjacent first holes of the plurality of first holes is less than the wavelength of light generated by the light-emitting layer.
A light-emitting device includes: a substrate; first column portions provided at the substrate; a plurality of second column portions provided at the substrate and that surround the first column portions as viewed from a normal direction of the substrate; a first semiconductor layer coupled to the first column portions; an insulating layer covering the first semiconductor layer and the second column portions; and a wiring line electrically coupled to the first semiconductor layer. Each of the first column portions and each of the second column portions includes an n-type second semiconductor layer, a p-type third semiconductor layer, and a u-type fourth semiconductor layer. The fourth semiconductor layer at each of the first column portions is injected with current to emit light. The fourth semiconductor layer at each of the second column portions is not injected with current. The wiring line overlaps at least one of the second column portions.
A light-emitting device includes a laminate provided at a substrate, a first electrode provided on an opposite side of the laminate from the substrate, and a second electrode provided on an opposite side of the first electrode from the substrate. The laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is provided between the substrate and the light-emitting layer. The first electrode constitutes a plurality of column portions. The second electrode is coupled to the plurality of column portions. The first electrode is a transparent electrode formed of a metal oxide transmitting light generated at the light-emitting layer.
The present invention addressing the problem of providing: a method for forming a three-dimensional structure dynamically by utilizing non-complementary base pairs in an oligonucleotide therapeutic; a modification mode for a nucleic acid maintaining a three-dimensional structure; and an artificial nucleic acid capable of bonding to a target sequence stably regardless of mutation. Provided are: an artificial nucleic acid for inducing a specific three-dimensional structure by hybridizing to a nucleic acid of interest that does not form a functional three-dimensional structure; a gene expression inhibitor and a nucleic acid detector including the same as an active ingredient; and a method for producing an artificial nucleic acid.
The light emitting device includes a substrate, and a laminated structure including columnar parts, wherein the columnar parts include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the light emitting layer has a c-plane and a facet plane, the second semiconductor layer is disposed on the c-plane and the facet plane, the first semiconductor layer has a first portion and a second portion smaller in diametrical size than the first portion, the second portion is disposed between the substrate and the first portion, and the c-plane and the second portion overlap each other, and the c-plane is smaller in diametrical size than the second portion in a plan view from a stacking direction of the first semiconductor layer and the light emitting layer.
TEST SUBSTANCE DETECTION METHOD, DETECTION AGENT COMPOSITION, DETECTION APPARATUS, PURIFIED WATER PRODUCTION FACILITY, INJECTION WATER PRODUCTION FACILITY, PURIFIED WATER PRODUCTION METHOD AND INJECTION WATER PRODUCTION METHOD
This test substance detection method includes: a step A in which a sample containing a test substance and water, a compound having a structure in which a response site and a recognition site are connected via a spacer, and a surfactant are added; and a step B in which the recognition site and the test substance interact and a response at the response site arising from the interaction is detected. Further, also provided are: a purified water production method and an injection water production method both using the foregoing; a detection agent composition containing a compound represented by formula (I) and a surfactant; and a detection apparatus, a purified water production facility, and an injection water production facility, all using the foregoing.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A light emitting apparatus includes a substrate and a laminated structure provided at a substrate surface of the substrate and including a plurality of columnar sections. The columnar sections each include a light emitting layer which has a first end facing the substrate and a second end facing away from the substrate. A first cross section of each of the columnar sections taken along the directions perpendicular to the lamination direction of the laminated structure includes the first end. A second cross section of each of the columnar sections taken along the directions perpendicular to the lamination direction is a cross section that is part of the light emitting layer and located at a position shifted from the first cross section toward the side away from the substrate in the lamination direction. In the plan view viewed in the lamination direction, the position of the center of the first cross section differs from the position of the center of the second cross section.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
A light emitting apparatus includes a laminated structure including a plurality of columnar portions. The plurality of columnar portions each includes a first semiconductor layer, a second semiconductor layer different from the first semiconductor layer in terms of conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first section, and a second section that surrounds the first section in a plan view along a lamination direction in which the first semiconductor layer and the light emitting layer are laminated structured on each other and has a bandgap wider than a bandgap of the first section. The second section forms a side surface of each of the columnar portions.
A light emitting apparatus includes a laminate including a columnar section. The columnar section includes an n-type semiconductor layer, a first p-type semiconductor layer, a light emitting layer provided between the n-type semiconductor layer and the first p-type semiconductor layer, and a second p-type semiconductor layer in contact with the first p-type semiconductor layer. The first p-type semiconductor layer is provided between the light emitting layer and the second p-type semiconductor layer. The first p-type semiconductor layer has a c-plane and a facet surface. The second p-type semiconductor layer has a c-plane region provided at the c-plane and a facet-surface region provided at the facet surface. The c-plane region has negatively polarized charges at an interface with the first p-type semiconductor layer. The facet-surface region has positively polarized charges at the interface.
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
A light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a columnar part, wherein the columnar part includes a first GaN layer having a first conductivity type, a second GaN layer having a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first GaN layer and the second GaN layer, the first GaN layer is disposed between the substrate and the light emitting layer, the light emitting layer has a first well layer as an InGaN layer, the first GaN layer has a c-face region, the first GaN layer has a crystal structure of a cubical crystal, and has a first layer constituting the c-face region, and a second layer as a GaN layer having a crystal structure of a hexagonal crystal is disposed between the first layer and the first well layer.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/02 - Structural details or components not essential to laser action
A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p−q.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
In a light emitting device, a first diametrical size that is the largest size of a columnar part between a substrate side of a light emitting layer and an opposite side of the substrate, the columnar part has a size no larger than the first diametrical size in an area between the substrate side of the light emitting layer and the substrate side of a first semiconductor layer, the columnar part has a size smaller than the first diametrical size in the area between the substrate side of the light emitting layer and the substrate side of the first semiconductor layer, the columnar part has a size no larger than the first diametrical size in an area between the opposite side to the substrate of the light emitting layer, and an opposite side to the substrate of a second semiconductor layer, and the columnar part has a size smaller than the first diametrical size in the area between the opposite side to the substrate of the light emitting layer in the laminating direction, and the opposite side to the substrate of the second semiconductor layer.
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
A light emitting device includes a laminated structure having a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer includes a light emitting layer, and the second semiconductor layer includes a first portion, and a second portion which surrounds the first portion in a plan view from a laminating direction of the first semiconductor layer and the light emitting layer, and is lower in impurity concentration than the first portion.
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
27.
ENDOTOXIN DETECTION METHOD AND ENDOTOXIN DETECTION APPARATUS, PURIFIED WATER PRODUCTION FACILITY AND INJECTION WATER PRODUCTION FACILITY, AND PURIFIED WATER PRODUCTION METHOD AND INJECTION WATER PRODUCTION METHOD
This endotoxin detection method detects endotoxin from a sample of a subject by using a fluorescent material having a structure in which a fluorescent part and a recognition part are connected via a spacer, wherein the recognition part recognizes a particular part of a molecular structure of the endotoxin.
A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a plurality of first columnar parts, wherein the stacked body includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the light emitting layer constitute the first columnar parts, the first semiconductor layer is disposed between the substrate and the light emitting layer, the second semiconductor layer is provided with a plurality of recessed parts, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a plurality of the first columnar parts constitutes a first photonic crystal, the second semiconductor layer and the low refractive-index parts constitute a second photonic crystal, and the first photonic crystal and the second photonic crystal are optically coupled to each other.
ST. MARIANNA UNIVERSITY SCHOOL OF MEDICINE (Japan)
SOPHIA SCHOOL CORPORATION (Japan)
Inventor
Matsumoto, Nobuyuki
Suzuki, Yumiko
Abstract
The present invention pertains to a compound represented by formula (1) or a pharmaceutically acceptable salt thereof, wherein in formula (1), R1to R3each independently are a predetermined amino group, a predetermined amide group, or a group represented by formula (2), and at least one among R1to R3 is a group represented by formula (2).
C07H 1/00 - Processes for the preparation of sugar derivatives
C07H 15/04 - Acyclic radicals, not substituted by cyclic structures attached to an oxygen atom of a saccharide radical
A61K 47/54 - Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additivesTargeting or modifying agents chemically bound to the active ingredient the non-active ingredient being chemically bound to the active ingredient, e.g. polymer-drug conjugates the non-active ingredient being a modifying agent the modifying agent being an organic compound
A light emitting apparatus includes an electrode and a laminated structure. The laminated structure includes an n-type first semiconductor layer, a light emitting layer, a p-type second semiconductor layer, a tunnel junction layer, and an n-type third semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The first semiconductor layer, the light emitting layer, the second semiconductor layer, the tunnel junction layer, and the third semiconductor layer are arranged in a presented order. The light emitting layer and the first semiconductor layer form a columnar section.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
A light emitting apparatus includes a substrate, a laminated structure provided at the substrate and including a plurality of columnar sections, and an electrode provided on the side opposite the substrate with respect to the laminated structure and injecting current into the laminated structure. The columnar sections each include an n-type first GaN layer, a p-type second GaN layer, and a light emitting layer provided between the first GaN layer and the second GaN layer. The first GaN layers are provided between the light emitting layers and the substrate. The laminated structure includes a p-type first AlGaN layer. The first AlGaN layer includes a first section provided between the second GaN layers of the columnar sections adjacent to each other and a second section provided between the first section and the electrode and between the columnar sections and the electrode.
The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
33.
Light-emitting device, method for manufacturing the same, and projector
A light-emitting device includes: a substrate; and a laminated structure provided at the substrate and having a plurality of columnar parts. The columnar part has: an n-type first semiconductor layer; a p-type second semiconductor layer; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The first semiconductor layer is provided between the light-emitting layer and the substrate. An end part on a side opposite to a side of the substrate, of the light-emitting layer, has a first facet surface. An end part on a side opposite to a side of the substrate, of the second semiconductor layer, has a second facet surface. A relation of θ2≤θ1 is satisfied, where θ1 is a taper angle of the first facet surface, and θ2 is a taper angle of the second facet surface. θ1 is 70° or smaller, and θ2 is 30° or greater.
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of columnar portions, in which the columnar portion includes an n-type first semiconductor layer, a p-type second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, and a third semiconductor layer having a band gap larger than that of the light emitting layer, and the third semiconductor layer includes a first part provided between the light emitting layer and the second semiconductor layer, and a second part that is in contact with a side surface of the light emitting layer.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/11 - Comprising a photonic bandgap structure
There is provided a light emitting device including: a substrate; and a laminated structure provided on the substrate and having a plurality of columnar portion groups, in which the columnar portion group includes at least one first columnar portion, and a plurality of second columnar portions, the first columnar portion has a light emitting layer into which a current is injected to generate light, no current is injected into the second columnar portion, an optical confinement mode is formed in the plurality of columnar portion groups, the first columnar portion is disposed at a position that overlaps a peak of electric field intensity, and the second columnar portion is disposed at a position that does not overlap the peak of electric field intensity.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/18 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of first columnar portions and a plurality of second columnar portions; and a first electrode and a second electrode, in which the first columnar portion includes a first semiconductor layer, a second semiconductor layer having a conductivity type different from the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, light generated in the light emitting layer propagates through the plurality of first columnar portions and the plurality of second columnar portions, a height of the second columnar portion is equal to or larger than a sum of a thickness of the first semiconductor layer and a thickness of the light emitting layer, and is lower than a height of the first columnar portion, the first semiconductor layer is provided between the substrate and the light emitting layer, the first electrode is electrically coupled to the first semiconductor layer, the second electrode is electrically coupled to the second semiconductor layer, and the second columnar portion is not electrically coupled to the second electrode.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/18 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
In a light emitting device, a columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the light emitting layer includes a first layer, and a second layer larger in bandgap than the first layer, the first semiconductor layer has a facet plane, the first layer has a facet plane, the facet plane of the first semiconductor layer is provided with the first layer, and θ2>θ1, in which θ1 is a tilt angle of the facet plane of the first semiconductor layer with respect to a surface of the substrate provided with the laminated structure, and θ2 is a tilt angle of the facet plane of the first layer provided to the facet plane of the first semiconductor layer with respect to the surface of the substrate.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/18 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
38.
Light-emitting device, method for manufacturing the same, and projector
A light-emitting device includes: a substrate; a laminated structure provided at the substrate and having a plurality of columnar parts; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The columnar part has: a first semiconductor layer; a second semiconductor layer having a different electrical conductivity type from the first semiconductor layer; and an active layer provided between the first semiconductor layer and the second semiconductor layer. The laminated structure has: a light propagation layer provided between the active layers of the columnar parts that are next to each other; a first low-refractive-index part provided between the light propagation layer and the substrate and having a lower refractive index than a refractive index of the light propagation layer; and a second low-refractive-index part provided between the light propagation layer and the electrode and having a lower refractive index than the refractive index of the light propagation layer.
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01L 33/54 - Encapsulations having a particular shape
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
G03B 21/00 - Projectors or projection-type viewersAccessories therefor
G03B 33/12 - Simultaneous recording or projection using beam-splitting or beam-combining systems, e.g. dichroic mirrors
A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a columnar part aggregate constituted by p columnar parts, wherein the stacked body includes a plurality of the columnar part aggregates, the p columnar parts each have a light emitting layer, a diagram configured by respective centers of the plurality of columnar parts has rotation symmetry when viewed from a stacking direction of the stacked body, a diametrical size of q columnar parts out of the p columnar parts is different from a diametrical size of r columnar parts out of the p columnar parts, a shape of the columnar part aggregate is not rotation symmetry, the p is an integer not less than 2, the q is an integer not less than 1 and less than the p, and the r is an integer satisfying r=p−q.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A light emitting apparatus including a plurality of first light emitters and a plurality of second light emitters that differ from the first light emitters in terms of resonance wavelength, in which the second light emitters are each disposed between each adjacent pair of the first light emitters, first light that resonates in the plurality of first light emitters is in phase, and second light that resonates in the plurality of second light emitters is in phase.
H01S 5/187 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
42.
Light-emitting device, method for manufacturing same, and projector
A light-emitting device includes a substrate and a stack provided on the substrate. The stack includes a plurality of columnar portions each of which includes a first columnar portion and a second columnar portion which has a diameter smaller than a diameter of the first columnar portions. Each first columnar portion is provided between the substrate and the second columnar portions, and includes: a first semiconductor layer; a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of generating light. The first semiconductor layer is provided between the substrate and the light-emitting layer. Each second columnar portion includes a third semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer.
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
1-xx251-xx33 (in the formula, A is one or two or more alkali metals wherein any proportions may be used for the two or more alkali metals, and 0 ≤ x ≤ 1).
H01L 41/317 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
The present invention provides a heat radiation device and a refrigeration cycle which have improved heat radiation efficiency and can be made more compact. A core 21 is fitted into at least an inlet side of a tube 2-1, groove sections 23 are provided spirally on the outer circumference of the core 21, a spiral flow path 25 having a polygonal cross-section is provided between the groove sections 23 and the tube inner wall, and a heat radiation section 3 is provided on the outer circumference side of the spiral flow path 25.
F28F 1/04 - Tubular elements of cross-section which is non-circular polygonal, e.g. rectangular
F28D 1/047 - Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators with the heat-exchange conduits immersed in the body of fluid with tubular conduits the conduits being bent, e.g. in a serpentine or zig-zag
F28F 1/40 - Tubular elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only inside the tubular element
45.
Process for preparing deuterated desmosine and derivatives thereof
There is provided a process for preparing a compound represented by the following general formula (1) or a salt thereof, which comprises exchanging one or more of an amino proton in a compound represented by the following general formula (2) or a salt thereof to deuterium, and after the exchanging, converting a deuterium-exchanged compound of the compound represented by the general formula (2) or a salt thereof into the compound represented by the general formula (1) or a salt thereof:
2 is independently tert-butyl group, benzyl group, methyl group or ethyl group.
A method of producing a lithium-ion secondary battery includes the following (α) and (β): (α) preparing a lithium-ion secondary battery, the lithium-ion secondary battery including at least a positive electrode, a negative electrode, and an electrolyte solution; and (β) adding a zwitterionic compound to the electrolyte solution. The negative electrode includes at least a negative electrode active material and a film. The film is formed on a surface of the negative electrode active material. The film contains a lithium compound. The zwitterionic compound contains a phosphonium cation or an ammonium cation and a carboxylate anion in one molecule.
To provide a volume-type optical element in which a self-cloning photonic crystal is used. An optical element is provided with half-wave plates of photonic crystals formed on the xy plane and laminated in the z-axis direction in a three-dimensional space x, y, z. The groove direction of the photonic crystals is a curved line, and the angle in relation to the y-axis direction changes continuously in the range of 0°-180°. Light entering the optical element in the axial direction is emitted from the optical element upon being divided and converted into clockwise circularly polarized light in the direction facing the x-axis by a given angle from the z-axis and anticlockwise circularly polarized light in the direction facing the −x-axis by a given angle from the z-axis. Laminating or placing a quarter-wave plate comprising a photonic crystal on one or both surfaces makes it possible to divide light entering from the z-axis direction of the optical element into two orthogonal linearly polarized lights.
G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements
G02B 1/02 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of crystals, e.g. rock-salt, semiconductors
G01J 4/04 - Polarimeters using electric detection means
Provided is a light-emitting device having: a substrate; a laminate provided to the substrate, the laminate having a plurality of columnar parts; and an electrode provided on the reverse side of the laminate from the substrate side. The columnar parts have a first semiconductor layer, a second semiconductor layer of a different conductivity type from that of the first semiconductor layer, and an active layer provided between the first semiconductor layer and the second semiconductor layer. The laminate has: a light propagation layer provided between the active layers of adjacent columnar parts; a first low-refractive-index part, which is provided between the light propagation layer and the substrate and which has a refractive index lower than that of the light propagation layer; and a second low-refractive-index part, which is provided between the light propagation layer and the electrode and which has a refractive index lower than that of the light propagation layer.
A light emitting device which comprises a substrate and a multilayer body that is provided on the substrate and has a plurality of columnar parts, and wherein: each one of the columnar parts has an n-type first semiconductor layer, a p-type second semiconductor layer, a light emitting layer that is arranged between the first semiconductor layer and the second semiconductor layer, and an electrode that is provided on a surface of the multilayer body, said surface being on the reverse side of the substrate-side surface; the first semiconductor layer is arranged between the light emitting layer and the substrate; an end of the light emitting layer, said end being on the opposite side of the substrate-side end, has a first facet surface; an end of the second semiconductor layer, said end being on the opposite side of the substrate-side end, has a second facet surface; and if θ1 is the taper angle of the first facet surface and θ2 is the taper angle of the second facet surface, θ1 and θ2 satisfy the relational expression θ1 ≤ θ2.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
National University Corporation Tokyo Medical and Dental University (Japan)
Sophia School Corporation (Japan)
Inventor
Hattori, Atsuhiko
Matsumoto, Yukihisa
Kagechika, Hiroyuki
Masuno, Hiroyuki
Chiba, Atsuhiko
Iwashita, Hikaru
Maruyama, Yusuke
Abstract
[Problem] To provide a method for inducing a long-term memory in a subject in need thereof.
[Solution to problem] A method for inducing a long-term memory, comprising a step of administering a compound represented by Formula I below, a pharmaceutically acceptable salt thereof or a solvate thereof to the subject.
C07D 403/12 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
C07C 223/06 - Compounds containing amino and —CHO groups bound to the same carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
A61K 31/136 - Amines, e.g. amantadine having aromatic rings, e.g. methadone having the amino group directly attached to the aromatic ring, e.g. benzeneamine
51.
METHOD FOR PRODUCING PLANT SEEDLINGS BY MICROWAVE IRRADIATION AND SEEDLINGS OBTAINED THEREBY
Provided is a method for producing new plant seedlings by microwave irradiation performed to efficiently promote plant growth. The method for producing plant seedlings is characterized in that microwave irradiation is started in a plant growth process at any time in the interval from the emergence of the first true leaf to prior to the emergence of the second true leaf. Microwave irradiation is performed for not more than 1 hour, and the microwave output can be 2 to 25 W per 1 to 20 seedlings.
A method for producing a plant seedling is provided, which is based on microwave radiation in order to efficiently facilitate the plant growth. In the method, microwave radiation is started at any timing during a period ranging from appearance of a first true leaf to a timing provided before appearance of a second true leaf in a growth process of a plant. The radiation time of the microwave may be within 1 hour, and the output of the microwave may be 2 to 25 W per 1 to 20 seedling or seedlings.
[Problem] To provide a volume-type optical element in which a self-cloning photonic crystal is used. [Solution] An optical element is provided with half-wave plates of photonic crystals formed on the xy plane and laminated in the z-axis direction in a three-dimensional space x, y, z. The groove direction of the photonic crystals is a curved line, and the angle in relation to the y-axis direction changes continuously in the range of 0°-180°. Light entering the optical element in the axial direction is emitted from the optical element upon being divided and converted into clockwise circularly polarized light in the direction facing the x-axis by a given angle from the z-axis and anticlockwise circularly polarized light in the direction facing the –x-axis by a given angle from the z-axis. Laminating or placing a quarter-wave plate comprising a photonic crystal on one or both surfaces makes it possible to divide light entering from the z-axis direction of the optical element into two orthogonal linearly polarized lights.
G02B 1/02 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of crystals, e.g. rock-salt, semiconductors
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
SOPHIA SCHOOL CORPORATION (Japan)
Inventor
Tokunaga, Masashi
Kawachi, Shirou
Ito, Toshimitsu
Kuroe, Haruhiko
Abstract
According to the present invention, electrode layers 24, 26 are connected to a bismuth ferrite layer 22 by being arranged so as to sandwich the bismuth ferrite layer 22 from a direction that is perpendicular to the c-axis of a bismuth ferrite crystal that constitutes the bismuth ferrite layer 22. An electric field in a direction that is perpendicular to the c-axis of the bismuth ferrite crystal is applied to the bismuth ferrite layer 22 by applying a voltage between the electrode layers 24, 26. Consequently, the present invention is able to provide a nonvolatile memory having low power consumption, to which data is able to be written.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using ferroelectric elements
H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 49/00 - Solid state devices not provided for in groups and and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
55.
ELECTROLYTE COMPOSITION, SECONDARY BATTERY, AND METHOD FOR USING SECONDARY BATTERY
The present invention is an electrolyte composition containing: composition (A) an ionic compound having a melting point of 200°C or less (with the caveat that component (B) and component (C) are excluded), component (B) an ionic compound including a metal ion of group 1 or group 2 of the periodic table, and component (C) a zwitterionic compound; a secondary battery having said electrolyte composition; and a method for using said secondary battery. According to the present invention, an electrolyte composition having excellent flame retardancy and nonvolatility, secondary battery having excellent cycle characteristics and has a high capacity, and a method for using said secondary battery are provided.
A plant cultivation method that comprises promoting the growth of a plant by microwave radiation. In a preset timing after a seed or bulb under cultivation germinates and shoots, the shoot or seedling is radiated with microwave for a preset period of time. In the microwave radiation to the germinating shoot or seedling, it is preferred to appropriately control the output and radiation time of the microwave so as to avoid heating of the radiation target by the microwave. For example, the output of the microwave is controlled to preferably 50 W or less, more preferably 30 W or less, and the radiation time thereof is controlled to preferably 120 minutes or shorter, more preferably 90 minutes or shorter. According to this treatment, the switch timing from the vegetative growth stage to the reproductive growth stage can be put forward and the growth condition of the plant in the vegetative growth stage can be improved in an environment that is disadvantageous for plant growth.
A process for preparing a compound represented by the following general formula (I) or a salt thereof, which comprises reacting lysine or a protective product thereof or a salt thereof with allysine or a protective product thereof in the presence of a specific trifluoromethane sulfonate to obtain a compound having pyridine ring or a salt thereof.
2)COOH group, and the other is hydrogen atom. And wherein, in the above-described general formula (I), one, or two or more of hydrogen atom, one, or two or more of carbon atom, or one, or two or more of nitrogen atom may be substituted with their isotope.)
Provided is a power amplification device equipped with: a power distributor (100a) that generates a first signal, a second signal, and a third signal, each having a different phase {(θ1, (θ1 + pπ/3), (θ1 + 2pπ/3)} (where p is an integer other than an integer multiple of 0 and 3); amplification means (60a, 60b, 60c) that respectively amplify the first signal, the second signal, and the third signal under the same condition, thereby generating a first amplified signal, a second amplified signal, and a third amplified signal; and a power distribution synthesizer (110a) that changes the phase of the first amplified signal, the second amplified signal, and the third amplified signal, thereby generating a first phase-shifted signal, a second phase-shifted signal, and a third phase-shifted signal having the respective phases {(θ2 + 2pπ/3), (θ2 + pπ/3), θ2}, and then combines the first phase-shifted signal, the second phase-shifted signal, and the third phase-shifted signal.
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japan)
Inventor
Saito, Tamao
Bartlem, Derek
Abstract
A repellant for repelling root-knot nematodes (Meloidogyne spp.) that comprises as an active ingredient a substance secreted by a cellular slime mold belonging to the genus Dictyostelium. The substance secreted by the cellular slime mold can be obtained by, for example, culturing the cellular slime mold to form fruiting bodies, then separating the cellular slime mold and extracting. As the cellular slime mold, D. discoideum, D. purpureum, D. mucoroides, D. fasciculatum, D. monochasioides, D. lacteum or D. giganteum may be used. Thus, root-knot nematodes can be repelled without exerting any bad influence upon crops and workers.
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK (USA)
SOPHIA SCHOOL CORPORATION (Japan)
Inventor
Lin, Yong Y.
Ma, Shuren
Turino, Gerard M.
Usuki, Toyonobu
Abstract
The present invention provides, inter alia, methods for measuring the amount of a marker of elastic fiber injury in a sample. The methods include contacting a sample with a compound of formula (1) and carrying out mass spectrometry on the sample containing the compound of formula (1). Also provided are methods of diagnosing whether a subject has a disease characterized by elastic fiber injury, a method for improving the accuracy and precision of mass spectroscopy analysis of a marker of elastic fiber injury, and kits for determining, by mass spectrometry, the amount of a marker of elastic fiber injury in a sample from a subject. Further provided are methods for preventing the progression of the effects associated with alpha-1 antitrypsin deficiency (AATD) in a subject with normal lung function.
A method for producing a compound represented by general formula (I) or a salt thereof, which comprises a step of reacting lysine, a protected product of lysine or a salt of lysine or the protected product with allicin or a protected product of allicin in the presence of a specific trifluoromethane sulfonate to produce a compound having a pyridine ring or a salt thereof. (In general formula (I), one of R1 and R2 represents a -CH2CH2CH2CH(NH2)COOH group and the other represents a hydrogen atom. In general formula (I), one or more hydrogen atoms, one or more carbon atoms or one or more nitrogen atoms may be independently substituted by an isotope.)
wherein the perovskite-type metal oxide is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction, of the pair of electrodes, a lower electrode provided on the substrate side is a multilayer electrode including at least a first electrode layer in contact with the substrate and a second electrode layer in contact with the piezoelectric film, and the second electrode layer is a perovskite-type metal oxide electrode which is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction.
B41J 2/045 - Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
H01L 41/18 - Selection of materials for piezo-electric or electrostrictive elements
H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H01L 41/318 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9≦x≦1.25, 0.4≦j≦0.6, 0.4≦k≦0.6, 0.09≦l≦0.49, 0.19≦m≦0.64, 0.13≦n≦0.48, and l+m+n=1 are satisfied.
H01L 41/18 - Selection of materials for piezo-electric or electrostrictive elements
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
C04B 35/26 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on ferrites
C04B 35/44 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminates
C04B 35/453 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
C04B 35/475 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on titanium oxides or titanates based on titanates based on bismuth titanates
H01L 41/08 - Piezo-electric or electrostrictive elements
H01L 41/09 - Piezo-electric or electrostrictive elements with electrical input and mechanical output
H02N 2/10 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors
H02N 2/16 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors using travelling waves
H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H01L 41/318 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
64.
HYDROGEN GENERATING METHOD, HYDROGEN USE METHOD, AND ELECTRICITY GENERATING SYSTEM
Hydrogen can be efficiently generated with a small amount of electrolysis energy. Generate hydrogen by electrolysing liquid ammonia having electrolytes added thereto, and generate electricity by reacting the generated hydrogen with oxygen. As the electrolysis energy for the liquid ammonia is low, a large amount of hydrogen can be efficiently generated. The electrical energy obtained from the hydrogen generated by electrolysis is greater than the electrical energy needed for the electrolysis of the liquid ammonia. Therefore, a small electricity source can be converted to a large electrical power and used.
Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the general formula Ax(ZnjTi(1-j))1 (MgkTi (1-k))mMnO3 , where A represents Bi, optionally containing one or more elements selected from the group consisting of trivalent metal elements; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9 ≤x≤1.25, 0.4≤j≤0.6, 0.4≤k≤0.6, 0.09≤1≤0.49, 0.19≤m≤0.64, 0.13≤n≤0.48, and 1+m+n=1 are satisfied.
H01L 41/18 - Selection of materials for piezo-electric or electrostrictive elements
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
66.
Semiconductor optical element array and method of manufacturing the same
The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/075 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
H01L 33/18 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal
A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
C23C 14/04 - Coating on selected surface areas, e.g. using masks
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
Disclosed is a semiconductor optical element array, which is equipped with a semiconductor substrate comprising a main surface in which a plurality of indentations is formed, a mask pattern, which is formed on top of the main surface of the semiconductor substrate, and which comprises a plurality of apertures directly on top of each of the plurality of indentations, a plurality of fine columnar crystals made from group III nitride semiconductor and grown upward of the mask pattern from the plurality of indentations through the plurality of apertures, an active layer grown on top of each of the plurality of fine columnar crystals, and a semiconductor layer that covers each of the active layers.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
70.
III NITRIDE STRUCTURE AND METHOD FOR MANUFACTURING III NITRIDE STRUCTURE
A III nitride structure is provided with a substrate (102), and a fine wall-like structure (110), which is arranged upright on the substrate (102) in the direction vertical to a surface of the substrate (102) and extends in the in-plane direction of the substrate (102). The fine-wall-like structure (110) contains a III nitride semiconductor crystal, and when the height of the fine-wall-like structure (110) is expressed as (h), and the width of the fine-wall-like structure in the direction orthogonally intersecting with the height direction and the extending direction is expressed as (d), (h) is larger than (d).
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
C23C 16/04 - Coating on selected surface areas, e.g. using masks
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
71.
III NITRIDE STRUCTURE AND METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR FINE COLUMNAR CRYSTAL
A III nitride structure includes a film (108) having a surface composed of a metal formed in a prescribed region on the surface of a substrate (102); and a fine columnar crystal (110) composed of at least a III nitride semiconductor formed on the surface of the substrate (102). The spatial occupancy ratio of the fine columnar crystal (110) is higher on the surface of the substrate (102) where the film (108) is not formed than that on the film (108).
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
72.
Columnar crystal containing light emitting element and method of manufacturing the same
A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/04 - Processes or apparatus for excitation, e.g. pumping
H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/18 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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