A surface-emitting laser element includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, an air-hole layer, and a reflection layer. A light emission surface is provided on a rear surface of the substrate. The air-hole layer has a diffraction surface that is a symmetrical center surface when light standing in the air-hole layer is diffracted with an electric field amplitude symmetrical in a direction orthogonal to the air-hole layer. A separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of combined light of first diffracted light diffracted from the diffraction surface to a side of the light emission surface and second diffracted light diffracted from the diffraction surface to a side of the reflection layer and reflected on the reflection surface is larger than a light intensity of the first diffracted light.
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A lighting apparatus includes a light source; a condensing part that condenses light and forms a focal point at a predetermined position; a liquid crystal element arranged at a position including the focal point; a first polarizing element; a second polarizing element; and a projection lens that projects images generated by the liquid crystal element and the polarizing elements; where the liquid crystal element has a first surface which includes the focal point position and is perpendicular to the projection lens optical axis, and a second surface disposed around the first surface and is oblique to the projection lens optical axis; and where the second surface is arranged such that the light is incident on the liquid crystal layer of the liquid crystal element from a best viewing azimuth of the liquid crystal element.
F21S 41/64 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on refractors, filters or transparent cover plates by changing their light transmissivity, e.g. by liquid crystal or electrochromic devices
F21S 41/147 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device
F21S 41/20 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by refractors, transparent cover plates, light guides or filters
A vertical cavity light-emitting element includes a gallium-nitride-based semiconductor substrate, a first multilayer reflector on the substrate, a semiconductor structure layer that includes an active layer made of a nitride semiconductor, a second multilayer reflector that is on the semiconductor structure layer and constitutes a resonator between the first and second multilayer reflectors, and a current confinement structure formed between the first and second multilayer reflectors. The first multilayer reflector is made by an In-containing nitride semiconductor layer containing In in composition and an In-free nitride semiconductor layer including no In being alternately laminated. The current confinement structure concentrates a current in one region of the active layer. An uppermost layer of the first multilayer reflector is the In-containing nitride semiconductor layer, and a region along an upper surface of the In-containing nitride semiconductor layer of the uppermost layer has a higher hydrogen impurity concentration than other regions.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A surface-emitting laser element includes a translucent substrate, a back surface of which is light emission surface, an air-hole layer that is a photonic crystal layer, and a light reflection layer including a reflection surface. The air-hole layer has a diffraction surface which has a weakening region where a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of interference light generated by interference of first diffracted light and second diffracted light is lower than a light intensity of the first diffracted light is provided, and a strengthening region where a separation distance between the diffraction surface and the reflection surface is provided such that the light intensity of the interference light is higher than the light intensity of the first diffracted light is provided.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Provided is a bracket attachment structure for detachably attaching a bracket to which a radar unit is attached to an outer lens. In the bracket attachment structure, the outer lens is attached to a lamp housing and constitutes a lamp chamber in which a lamp unit is disposed between the outer lens and the lamp housing, the outer lens includes a recessed part and an engaged part formed on an inner wall of the recessed part, and the bracket includes a bracket main body disposed in the recessed part, an engaging part provided on the bracket main body and inserted into the engaged part, an extension part extending to an outside of the recessed part and detachably fixed to an attachment partner, and at least one spring part disposed between the rear surface of the bracket main body and a bottom surface of the recessed part.
Provided is a bracket attachment structure for detachably attaching a bracket to which a radar unit is attached to an outer lens. In the bracket attachment structure, the outer lens is attached to a lamp housing and constitutes a lamp chamber in which a lamp unit is disposed between the outer lens and the lamp housing, the outer lens includes a recessed part, the bracket includes a bracket main body disposed in the recessed part and an extension part extending from an other end side on a side opposite to one end side of the bracket main body to the outside of the recessed part and detachably fixed to an attachment partner, a restricting part is provided on a bottom surface of the recessed part, and a fitting recessed part into which the restricting part is inserted and fitted is provided in the bracket main body.
Provided is a semiconductor light-emitting device which is suitable for miniaturization, can be densely arranged in a matrix shape, has high output, and has high protection performance against overcurrent. The semiconductor light-emitting device is provided with: a support substrate comprising a flat plate-shaped base material comprising a first conductivity-type semiconductor, a light-reflective dielectric multilayer film provided on the first main surface of the base material, at least a pair of placement electrodes provided on the dielectric multilayer film and comprising an anode and a cathode, and at least a pair of mounting electrodes provided on a second main surface opposite the first main surface of the base material and comprising an anode and a cathode; a semiconductor light-emitting element placed on the pair of placement electrodes with a p-electrode and an n-electrode electrically connected to the corresponding ones of the pair of placement electrodes; a pair of conductive vias that electrically connect each of the pair of mounting electrodes and each of the pair of placement electrodes; and a second conductivity-type diffusion region that is provided on an inner wall surface of the base material in contact with the conductive vias, and that is of a conductivity type opposite to the first conductivity type.
Provided is a semiconductor light-emitting device that is suitable for a reduction in size, that enables dense arrangement in a grid or matrix shape, and that has high protective performance against an overcurrent. The present invention comprises: a support substrate in which at least one pair of placement electrodes constituted by a positive electrode and a negative electrode is disposed on a first main surface of a planar base material constituted by a first conductivity type semiconductor and at least one pair of mounting electrodes constituted by a positive electrode and a negative electrode is disposed on a second main surface that is opposite to the first main surface of the base material; a semiconductor light-emitting element in which a p-electrode and an n-electrode are placed on and electrically connected to the pair of placement electrodes so as to correspond to the pair of placement electrodes; a pair of conduction vias which electrically connect the pair of mounting electrodes to the pair of placement electrodes, respectively; and second conductivity type diffusion regions which are disposed on the inner wall surfaces of the base material abutting on the conduction vias and which are of a conductivity type opposite to the first conductivity type.
A liquid crystal element includes: a first substrate, a second substrate, and a liquid crystal layer arranged therebetween; auxiliary electrodes arranged on the first substrate; an insulation layer arranged covering a plurality of first electrodes; a plurality of pixel electrodes arranged between the insulation layer and the liquid crystal layer; and a counter electrode arranged on the second substrate; where the pixel electrodes are arranged with a gap provided therebetween in one direction, where the auxiliary electrodes are arranged to respectively overlap with the gap between the adjacent pixel electrodes, and is connected to the adjacent pixel electrodes through a contact hole provided in the insulation layer, and where the insulation layer has an opening part in a portion corresponding to the gap between the adjacent pixel electrodes.
An optical element, which is arranged between a light source and a light deflector reflecting and two-dimensionally deflecting incident light, includes: a first region on which light from the light source is caused to be incident and which emits the light to the light deflector; and a second region which is different from the first region, on which light reflected and two-dimensionally deflected by the light deflector is incident, and which emits the light to an outside, and an optical surface having a different optical action is provided on at least one side of an incident side and an emission side of the first region and an incident side and an emission side of the second region.
A substrate has a moth-eye nano pattern on a surface of the substrate in which cone-shaped protrusions are periodically formed, a first semiconductor layer on the moth-eye nano pattern and having a photonic crystal layer, an active layer on the first semiconductor layer and having a light-emitting layer, and a second semiconductor layer on the active layer.
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
12.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided are a semiconductor light-emitting element capable of constituting a light-emitting device that has a narrow-angle light distribution and has high output and high efficiency, and a substrate for a semiconductor light-emitting element. This semiconductor light-emitting element comprises: a substrate on which an uneven structure is formed in which conical protrusions are periodically arranged on a first surface; a semiconductor laminate in which a first semiconductor layer having a first conductivity type, an active layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type are formed in this order on the first surface of the substrate on which the uneven structure has been formed; and a reflection layer that is formed on the semiconductor laminate and that reflects emission light emitted from the active layer. The substrate has translucency to the emission light. Where a period in which the protrusions are arranged is P and a wavelength of the emission light is λ, the period satisfies 0.8 ≤ P/λ ≤ 1.
F21V 5/02 - Refractors for light sources of prismatic shape
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
Provided is a fluid sterilization reactor capable of preventing breakage of a light-transmitting plate that transmits ultraviolet light even when a water hammer is generated. A light-transmitting plate 101 and a reflector 104 of a light source unit 100 are sandwiched and supported between a flange 13 of a main body 10 and a support member 105. An O-ring 50 is disposed between the light-transmitting plate 101 and the flange 13. A first gap 60 is provided between a surface 101a on the main body 10 side of the light-transmitting plate 101 and a surface 13a facing the light-transmitting plate 101 of the flange 13. A second gap 70 is provided between a surface 104b of a portion 104a, projecting further outward than the light-transmitting plate 101, of the reflector 104 and a surface 13b of the flange 13. Thus, the flange 13 is not in contact with the light-transmitting plate 101 and the reflector 104.
B01J 19/12 - Processes employing the direct application of electric or wave energy, or particle radiationApparatus therefor employing electromagnetic waves
C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light
14.
OPTICAL SCANNING DEVICE AND OBJECT DETECTING DEVICE
The objective of the present invention is to provide an optical scanning device capable of greatly changing an angle of view during optical scanning, and an object detecting device including the same. This optical scanning device, which is used in a device that detects an object by emitting light and receiving the reflected light, comprises: a deflector; at least one light source; a variable polarization element that is disposed such that light generated by the light source is incident thereon, and that emits first emitted light mainly consisting of first light in a first polarization state or second emitted light mainly consisting of second light in a second polarization state different from the first polarization state; a branching element that causes the first light and the second light to branch in different directions of progress; and an optical system that causes the first light branched by the branching element to enter the deflector at a first angle, and causes the second light branched by the branching element to enter the deflector at a second angle of a different size to the first angle.
A vehicle lamp has a first light emitting surface and a second light emitting surface forming a light emitting surface, which is continuous in a vehicle width direction, by connecting a back surface on a tip side of a first light guide lens and a front surface on a base end side of a second light guide lens via a connecting portion, and a first lateral emission surface configured to emit some of first light guided in the first light guide lens toward an inner side in a vehicle width direction is provided on the connecting portion.
The objective of the present invention is to improve visibility in front and to the sides of a subject vehicle during rainfall. This headlamp control device is a device for controlling the operation of each of a first headlamp disposed on the same side as the side on which a driver's seat of a subject vehicle is disposed and a second headlamp disposed on the opposite side to the side on which the driver's seat is disposed, wherein, if the amount of rainfall is equal to or greater than a predetermined value, a controller: performs control such that first illuminating light from the first headlamp is relatively darker than second illuminating light from the second headlamp; performs control such that an illumination width of the second illuminating light becomes narrower, biased toward the opposite side to the side on which the driver's seat is disposed; and performs control to provide a gradually changing part at the end of the second illuminating light on the same side as the side on which the driver's seat is disposed, in which the light intensity gradually decreases and/or the height in the vertical direction gradually decreases.
B60Q 1/04 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights
F21V 9/40 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
F21V 14/04 - Controlling the distribution of the light emitted by adjustment of elements by movement of reflectors
A light-guide-part has width that gradually increases from first-end toward second-end and shape in which both sides of the light-guide-part in widthwise direction having optical axis interposed between are curved toward one-direction. An incidence-part has incidence-surface located in central part of the first-end of the light-guide-part and facing light source. The incidence-surface has shape in which both sides of the incidence-surface in the widthwise direction having the optical axis interposed between are curved toward the one-direction, curved in concave shape when the light-guide-part is seen from the one-direction, and curved in convex shape in cross section in thickness direction of the light-guide-part parallel to the optical axis. A reflecting-part has reflecting-surface inclined toward the one-direction on the second-end of the light-guide-part. The reflecting-surface has shape in which both sides of the reflecting-surface in the widthwise direction having the optical axis interposed between are curved toward the one-direction.
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
The present invention includes: a substrate; a first multilayer film reflector formed on the substrate; a semiconductor structure layer including a first semiconductor layer of a first conductivity type formed on the first multilayer film reflector, a light-emitting layer formed on the first semiconductor layer, and a second semiconductor layer that is of a second conductivity type opposite to the first conductivity type, is formed on the light-emitting layer, has a protruding section protruding upward from the center of an upper surface, and has insulating properties in a part along a region outside of the protruding section on the upper surface; a first insulating layer that has insulating properties and is formed across the side surface of the protruding section of the second semiconductor layer; a conductive film that has light-transmitting properties, is formed so as to cover the upper surface of the second semiconductor layer from the upper surface of the protruding section to the peripheral edge thereof, and is electrically connected to the second semiconductor layer; and a second multilayer film reflector that is formed so as to cover the protruding section on the semiconductor structure layer and constitutes a resonator in the interval between said second multilayer film reflector and the first multilayer film reflector.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
This vehicle lamp (1) for projecting light forward comprises: a first optical system (10) having a first incident part and a first emitting part; a second optical system (20) which is disposed side by side with the first optical system in a direction orthogonal to the front-rear direction, and which has a second incident part and a second emitting part; a first light source unit (30) facing the first incident part; and a second light source unit (40) facing the second incident part. The first light source unit has a first main light-emitting part (31) and a first sub-light-emitting part (32), and the second light source unit has a second main light-emitting part (41) and a second sub-light-emitting part (42). The first main light-emitting part is disposed on the optical axis of the first incident part. The second main light-emitting part is disposed on the optical axis of the second incident part. The first sub-light-emitting part is offset to the left with respect to the optical axis of the first incident part. The second sub-light-emitting part is offset to the right with respect to the optical axis of the second incident part.
F21S 41/663 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by switching light sources
F21S 41/143 - Light emitting diodes [LED] the main emission direction of the LED being parallel to the optical axis of the illuminating device
F21S 41/151 - Light emitting diodes [LED] arranged in one or more lines
F21W 102/10 - Arrangement or contour of the emitted light
A semiconductor light emitting device includes: a wiring substrate on which a p-electrode and an n-electrode are provided on a substrate; a light-emitting functional layer including a p-type semiconductor layer and an n-type semiconductor layer connected to the p-electrode and the n-electrode, respectively, and bonded onto the wiring substrate; a light-transmitting optical element having a light shielding film provided on a side surface of a plate-shaped light-transmitting optical body and which has an annular frame portion that covers a peripheral edge portion of a back surface of the light-transmitting optical body and formed on the peripheral edge portion; and an adhesive layer configured to adhere the light-transmitting optical element to an upper surface of the wiring substrate such that the light-emitting functional layer is inserted into a recessed portion inside the frame portion. The recessed portion is filled with the adhesive layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor light emitting element (10) includes flat plate-shaped translucent element substrate (11) with two main surfaces (11A, 11B) facing each other, light emitting semiconductor layer (12) formed on one main surface (11A) of element substrate (11) and in which n-type semiconductor layer (13), light emitting layer (14), and p-type semiconductor layer (15) are laminated, n-electrode (16) connected to n-type semiconductor layer (13) through at least one hole portion (12A) leading to n-type semiconductor layer (13) and provided on p-type semiconductor layer (15) being electrically separated from p-type semiconductor layer (15) by insulating film (18), first element electrode (19) electrically connected to n-electrode (16) and provided to extend in first direction, and second element electrode (20) electrically connected to p-type semiconductor layer (15) and provided to extend in first direction while being spaced apart from first element electrode (19), where thickness of element substrate (11) is 100 μm or less.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The objective of the present invention is to reduce visual difficulties associated with movement of a dimmed range (or a light-blocked range). Provided is a device for controlling the operation of a vehicular lamp fitting having a variable light distribution pattern, wherein, when a first region arises in which a dimmed range set in a first time period is to be switched to a light illumination range in a second time period and/or a second region arises in which a light illumination range set in the first time period is to be switched to a dimmed range in the second time period, a controller sets an illumination mode in which the brightness of each region is changed gradually, and generates a control signal to be output to the vehicle lamp fitting on the basis of the set illumination mode. The illumination mode changes over time such that the amount of change in brightness in the vicinity of a start point and in the vicinity of an end point is smaller than the amount of change midway between the start point and the end point.
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
23.
VEHICLE LAMP CONTROL DEVICE, VEHICLE LAMP CONTROL METHOD, AND VEHICLE LAMP SYSTEM
The purpose of the present invention is to achieve light distribution corresponding to a steering state of a driver. A device for controlling operation of a vehicle lamp capable of variably setting light distribution comprises a controller connected to the vehicle lamp. The controller controls the vehicle lamp so as to radiate a low beam, and, when the signal intensity of a first frequency band set within the range of 0.3-0.6 Hz in a frequency analysis result pertaining to a steering angle signal acquired from the vehicle exceeds a reference value, controls the vehicle lamp so as to irradiate a prescribed range in front of the vehicle with an additional beam.
B60Q 1/18 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights being additional front lights
B60Q 1/12 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights adjustable, e.g. remotely-controlled from inside vehicle automatically due to steering position
B60R 16/02 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided forArrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric
B62D 5/04 - Power-assisted or power-driven steering electrical, e.g. using an electric servo-motor connected to, or forming part of, the steering gear
24.
SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME
A surface emitting laser element includes a substrate and a hexagonal semiconductor structure layer formed on the substrate which emits a light from an upper surface side or a bottom surface side The semiconductor structure layer includes a first clad layer of a first conductivity type, a first guide layer of the first conductivity type having a photonic crystal layer and a first embedding layer, a second embedding layer, an active layer, second guide layer, and a second clad layer of a second conductivity type. The photonic crystal layer has a plurality of voids disposed having two-dimensional periodicity when viewed from above. The first embedding layer is formed on an upper side of the photonic crystal layer and closes openings of the voids. And an oxygen concentration of the second embedding layer is less than an oxygen concentration of the first embedding layer.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A LiDAR system 10 comprises: an irradiation device 12 for irradiating an irradiation area 13 with a laser beam; and a light reception device 14 for receiving a reflected light 46 from a search area 17 of a light reception area 15. In the irradiation area 13, an irradiation-side main optical axis 41 corresponding to the path of the maximum intensity laser beam is set so as to deviated from an irradiation-side central optical axis 40 extending on the center line of the irradiation area 13, and a light reception-side central optical axis 42 extending along the center line of the light reception area 15 is set so as to be closer to the irradiation-side central optical axis 40 than to the irradiation-side main optical axis 41.
Even when a laser beam emitted from an irradiation device 12 hits a raindrop 55 (object in the air), the incident intensity Is of the laser beam when light 46 reflected from the raindrop is incident on a light reception device 14 is less than a threshold value Iref, and the shortest distance Ds between a LiDAR system 10 and a search area 17 is set on the basis of a diameter Ra and a reflectance Ea expected for the raindrop 55. The search area 17 is set to be separated from the irradiation device 12 by the shortest distance Ds or more.
The present invention comprises a tabular phosphor part including a phosphor, a dielectric multilayer film formed on one surface of the phosphor part and configured so as to reflect a fluorescence component in a wavelength region that is a portion of the wavelength region of fluorescence emitted by the phosphor, and a plurality of nanoantennas provided periodically on the dielectric multilayer film.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
The present invention has: a flat plate-shaped phosphor part including a phosphor that is excited by excitation light and emits fluorescence; and a plurality of nanoantennas that are provided so as to form a grid-shaped array pattern in each of a plurality of regions on one surface in a plan view seen from a direction perpendicular to the surface of the phosphor part, and that are constituted from a metal material or a dielectric material, the array pattern of the plurality of nanoantennas in one region among the plurality of regions being a pattern obtained by rotating the array pattern of the plurality of nanoantennas in another region about an axis perpendicular to a single plane.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
Provided is a LiDAR system for a vehicle capable of optimizing light distribution of a laser beam irradiating an irradiation area, while simplifying the structure of an irradiation-side optical system. A lens 58 of an irradiation device 12 of a LiDAR system 10 has a reflection surface 69n of a conical side surface in which a vertex T68n is on a light source 33n side and a center axis (auxiliary line C68n) is deviated with respect to an optical axis (auxiliary line C33n) of a light source 33n, and reflects a laser beam from the light source 33n in a radiation direction on a reflection surface 69n.
The present invention includes: a substrate; a first multilayer film reflecting mirror formed on the substrate; a semiconductor structure layer including a first semiconductor layer that is formed on the first multilayer film reflecting mirror and has a first electroconductivity type, a light-emitting layer that is formed on the first semiconductor layer, and a second semiconductor layer that is formed on the light-emitting layer and has a second electroconductivity type opposite from the first electroconductivity type; a metal oxide film formed on the second semiconductor layer, the metal oxide film covering one region at the center of the upper surface of the second semiconductor layer, being electrically connected to the second semiconductor layer in the one region, and being insulated from the surface of the second semiconductor layer in a peripheral region around the one region; and a second multilayer film reflecting mirror that is formed so as to cover the one region on the semiconductor structure layer and constitutes a resonator together with the first multilayer film reflecting mirror.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
This vehicle lamp comprises a light source (13) and a light guide body (20) that guides light emitted from the light source forward of the lamp. The light guide body (20) has a first light-guide part (21) that has a semi-ring shape, with a light emission part of the light source (13) at the center thereof, and a second light-guide part (22) that is disposed at a position further away than the first light-guide part. The second light-guide part (22) has formed therein a base part (23) that has a semi-ring shape and a plurality of light guide paths (24) that each project in a direction away from the base part (23) and that are each provided with a light-emitting part in a tip region. Light-emitting parts (15) are formed side by side so as to be arranged apart from each other in the left-right direction. The side surface of the first light-guide part on the light source side converts light having entered the light guide body (20) from the light source into parallel light rays in a direction orthogonal to a first direction.
The present invention includes an n-type semiconductor layer formed on a first reflective mirror, an active layer made of multiple quantum wells formed on the n-type semiconductor layer, a final barrier layer formed on the final quantum well of the active layer, an electron blocking layer formed on the final barrier layer, a p-type semiconductor layer formed on the electron blocking layer, a dielectric spacer layer formed on the p-type semiconductor layer, and a second reflective mirror formed on the spacer layer. The number of antinodes of a standing wave due to emitted light from the active layer, included in the electron blocking layer and the p-type semiconductor layer is 1, the number of nodes is 0 or 1, and Expression (3) is satisfied for the active layer and the final barrier layer.
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
A light guide part (5) of this vehicle lamp has a recess (12) that forms a space (K), and a light guide exit part (13) and a light guide entrance part (14) that face each other with the space (K) therebetween. The light guide exit part (13) emits, from a plurality of exit cuts (13a) toward the space (K), light (L) guided inside of the light guide part (5). In the light guide entrance part (14), the light (L) emitted toward the space (K) enters into the light guide part (5) through a plurality of entrance cuts (14a). Of a central region (E1) positioned in the center in the width direction and peripheral regions (E2) positioned on either side of and sandwiching the central region (E1) in the width direction, the plurality of exit cuts (13a) and the plurality of entrance cuts (14a) cause light (L1) that passes through the central region (E1) to be refracted in a diffusion direction, and cause light (L2) that passes through the peripheral regions to be refracted in a concentration direction.
The objective of the present invention is to implement a fault diagnosis function by means of a simple configuration. This control device for a projection system comprises: a first clock generation unit that generates a first clock signal; a second clock generation unit that generates a second clock signal; a control unit that controls the operations of a laser light source and an optical deflector by using the first clock signal; a monitoring unit that monitors the operation of the control unit by using the second clock signal; and a processing unit that generates a horizontal drive synchronization signal, a vertical drive synchronization signal, a horizontal video synchronization signal, and a vertical video synchronization signal, wherein the monitoring unit measures the length of a period during which at least one of the horizontal drive synchronization signal or the vertical drive synchronization signal is one of a relatively high H level or a relatively low L level on the basis of the second clock signal, and outputs a first error signal indicating the detection of an abnormality to the control unit when the period is outside a predetermined range.
G09G 3/02 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes by tracing or scanning a light beam on a screen
This semiconductor light-emitting device uses a fiber-reinforced resin substrate into which a metal core is inserted, wherein peeling at the boundary between the fiber-reinforced resin substrate and an adhesive resin material is prevented. A semiconductor light-emitting device according to the present invention has: a substrate; a semiconductor light-emitting element that is mounted on the substrate; and a resin lens that is disposed on the substrate so as to fill the periphery of the semiconductor light-emitting element. The substrate includes: a plate-like fiber-reinforced resin base material; a through-hole that penetrates the base material in the thickness direction; a metal core that is disposed in the through-hole; an adhesive resin that fills the space between the metal core and an inner wall of the through-hole; and a metal pattern that covers an upper surface of the metal core. The semiconductor light-emitting element is die-bonded to a region of the metal pattern that is directly above the metal core. A coating layer that covers the boundary between the adhesive resin and the edge of the opening of the through-hole is disposed on the upper surface of the substrate.
To provide a light-emitting device that is able to reduce a light loss and achieve a narrow angled emitted light. The light-emitting device comprises: a light-emitting element having a rectangular parallelepiped shape and having an element electrode surface on which a pair of element electrodes made of a cathode and an anode are formed on a lower surface and a light-emitting surface on an upper surface opposed to the element electrode surface; a translucent light-collecting member disposed on the light-emitting surface of the light-emitting element and having a plurality of light emission regions separated away from one another on a surface opposite of a surface opposed to the light-emitting surface; and an optical structure formed to respectively overlap a plurality of the respective light emission regions viewed from above and having a plurality of convex lens portions in convex in an upper side.
To obtain a liquid crystal element having a plurality of alignment domains with a simple configuration. A manufacturing method of a liquid crystal element including: a first process that forms a first substrate having a first alignment film subjected to uniaxial alignment treatment; a second process that forms a second substrate having a second alignment film subjected to uniaxial alignment treatment; a third process that forms a liquid crystal layer between the first alignment film and the second alignment film using a liquid crystal material including a monomer which can be polymerized by light irradiation; and, of a first region and a second region adjacent to each other in the liquid crystal layer in a plane view, a fourth process that performs light irradiation with no voltage applied or with a voltage less than a threshold value applied to the first region.
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
F21V 9/14 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing polarised light
F21W 102/165 - Arrangement or contour of the emitted light for high-beam region or low-beam region the borderlines between emitted regions and dark regions other than cut-off lines being variable
The present invention provides a radar cover attachment/detachment structure. This radar cover attachment/detachment structure for detachably mounting a radar cover (60) onto a bracket (50) to which a radar unit (70) is detachably mounted comprises: an engaging part (54) provided on one of the bracket or the radar cover; and an engagement part (63) that is provided on the other of the bracket and radar and is engaged by the engaging part. The engaging part engages the engagement part as a result of sliding the radar cover with respect to the bracket. The radar cover is detachably mounted onto the bracket as a result of the engaging part engaging the engagement part.
Provided is a radar cover attachment/detachment structure. This radar cover attachment/detachment structure detachably attaches a radar cover (60) to a bracket (50). The radar cover attachment/detachment structure comprises: an engaging part (52) provided on one of the bracket and the radar cover; an engaged part (61) provided on the other of the bracket and the radar cover and with which the engaging part engages; and a guide passage (53) provided on the one of the bracket and the radar cover having the engaging part, the guide passage serving to guide a rod-shaped tool (80) to the engaging part. The guide passage extends from an opening end (53a), into which the rod-shaped tool is inserted, to the vicinity of the engaging part. The radar cover is removed from the bracket due to the engagement of the engaging part with the engaged part being released by the rod-shaped tool which is inserted through the opening end and guided by the guide passage to the engaging part.
To achieve higher definition of a channel portion of an organic transistor and to reduce bulging at the edge part of the channel portion. A manufacturing method of an organic transistor includes: forming a gate electrode on a substrate surface; forming a gate insulating film on the substrate surface to cover the gate electrode; forming a drain electrode and a source electrode with a predetermined distance therebetween on the gate insulating film surface and at a position where each electrode partially overlaps with the gate electrode; forming a liquid crystal alignment film on the gate insulating film surface to cover the drain electrode and the source electrode; forming an opening part by dripping an etchant to a region of the liquid crystal alignment film that overlaps with the gate electrode in a plane view; and forming an organic semiconductor film at the opening part of the liquid crystal alignment film.
H10K 10/46 - Field-effect transistors, e.g. organic thin-film transistors [OTFT]
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
41.
Wavelength conversion device and illumination device
A wavelength conversion device includes a wavelength converter having a plate shape and a plurality of antennas. The wavelength converter converts a wavelength of incident light and generates wavelength-converted light and emits the wavelength-converted light. The plurality of antennas are disposed on a light-emitting surface of the wavelength converter. The plurality of antennas form an antenna array in a first region of the light-emitting surface. The respective plurality of antennas are arranged with a predetermined period in the first region. The antenna array is absent in a second region outside the first region. An optical path length from a light-receiving surface of the wavelength converter to the light-emitting surface of the incident light that reaches a light-emitting surface of the first region is longer than an optical path length from the light-receiving surface to the light-emitting surface of the incident light that reaches a light-emitting surface of the second region.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
F21V 9/45 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity by adjustment of photoluminescent elements
F21Y 105/10 - Planar light sources comprising a two-dimensional array of point-like light-generating elements
Provided is a waterproof ultraviolet light-emitting module capable of preventing deterioration due to moisture of an LED die and preventing deterioration due to heat. An ultraviolet LED package 10 is mounted on a mounting substrate 20. A lens 40 includes a dome-shaped lens body 41 and a flange part 42. The flange part 42 of the lens 40 is sandwiched between a cover 50 and a chassis 30, and the cover is pressed and fixed to the chassis by means of a fastening tool 60. The chassis 30 is provided with a convex rib 41. The lower surface of the flange 42 of the lens 40 is pressed against the rib and is thereby deformed to seal the space in the lens 40.
A surface emitting laser includes a gallium-nitride-based semiconductor substrate, a first multilayer reflector, a semiconductor structure layer including an active layer, a first electrode layer, a second electrode layer formed on an upper surface of the semiconductor structure layer and electrically in contact with a semiconductor layer of the semiconductor structure layer in one region of the upper surface, and a second multilayer reflector configuring a resonator between the first multilayer reflector and the second multilayer reflector. An upper surface of the semiconductor substrate is a surface offset from a c-plane to any one of crystal planes of an m-plane—or an a-plane. The one region has a shape having a longitudinal direction in an m-axis direction when the upper surface is offset to the m-plane, and a shape having a longitudinal direction in an a-axis direction when the upper surface is offset to the a-plane.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
44.
LIGHT-EMITTING DEVICE, AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE
The present invention includes: a plurality of flat lead electrodes; a frame body which covers the side portions of the plurality of lead electrodes and a separation portion between the plurality of lead electrodes and has an opening that exposes the plurality of lead electrodes; and a light-emitting element mounted on the plurality of lead electrodes exposed through the opening. The outer side surface of the frame body has recesses extending from the top surface of the frame body to the bottom surface thereof, the lead electrodes partly protruding in the recesses.
211212212) of the second rod-shaped light guide part are set to different shapes to make the angular range of light emitted from an emission surface of the first rod-shaped light guide part larger than the angular range of light emitted from an emission surface of the second rod-shaped light guide part. The first rod-shaped light guide part is provided behind the wide area, and the second rod-shaped light guide part is provided behind the narrow area.
In the present invention a light reduction range is set more suitably according to the state of a vehicle ahead. This control device for a vehicle headlight is configured such that: if the difference between a first position indicating a position of a first light emission part of a vehicle ahead and a right end position of the vehicle ahead is less than or equal to a first reference value, or if the difference between the first position and a left end position of the vehicle ahead is less than or equal to a second reference value, a second position indicating a position of a second light emission part that is not detected in the vehicle ahead is determined on the basis of the first position, the right end position, the left end position, and the relative distance between the vehicle ahead and the host vehicle; a light distribution pattern having a light reduction range corresponding to the position of the vehicle ahead is set, using the first position and the second position; and a control signal corresponding to the light distribution pattern is generated and supplied to the vehicle headlight.
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
An optical scanning device 10 comprises: a mirror unit 31; an outside actuator 35 for reciprocating and turning the mirror unit 31 around a prescribed rotation axis line; and an optical deflector control unit 20 for supplying a driving voltage Vx in a periodic waveform to the outside actuator 35. The periodic waveform includes a rising section Db that has sub-sections Db1 to Db5. The sub-sections Db2, Db4 of the rising section Db are set so that the change rate Ex of the driving voltage Vx is maintained at a prescribed value Exc. The change rate Ex of the driving voltage Vx in the sub-sections Db1, Db5 is set to a value greater than Exc.
A light emitting element includes an element main body and a sapphire substrate 90. The element main body has an AlGaAs-based semiconductor layer 50, an n-type current diffusion layer 60, and a cap layer 70 of an InGa-based semiconductor that does not contains As as a component in a lamination direction. The amorphous layer 80 is interposed between the element main body and the sapphire substrate 90, and contains constituent elements of the cap layer 70 and the sapphire substrate 90 as components.
A light-emitting device includes a substrate, a light-emitting element, and a resin material. The light-emitting element is disposed on the substrate. The resin material is made of a translucent thermosetting resin disposed at a peripheral area of the light-emitting element. The resin material has a plurality of closed spaces, and each of the plurality of closed spaces holds a resin body.
To provide a liquid crystal element having multiple alignment domains with a simple configuration. The liquid crystal element includes: a first and a second substrate; a liquid crystal layer inbetween the two substrates; and a seal material with an injection port; where a first and a second alignment film each has an alignment regulating force in one direction on a surface in contact with the liquid crystal layer, a polymerized monomer is present at the interface between each of the two alignment films and the liquid crystal layer; the liquid crystal layer has a first region close to the injection port and a second region far from the injection port; and the first region has a high polymer density and has a pretilt angle in a direction opposite to the alignment regulating force, and the second region has a pretilt angle in the same direction as the alignment regulating force.
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
F21S 41/64 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on refractors, filters or transparent cover plates by changing their light transmissivity, e.g. by liquid crystal or electrochromic devices
F21W 102/20 - Illuminance distribution within the emitted light
This method for producing a substrate comprises: a step for applying, onto at least a portion of a substrate surface, a UV-curable resin coating material that contains less than 1% nonreactive volatile organic solvent having a viscosity of less than 30 mPa•s/25°C and a boiling point of 200°C or lower; and a step for curing the UV-curable resin coating material to form a cured film by irradiating the substrate surface onto which the UV-curable resin coating material has been applied with UV from a light source unit.
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
52.
ACTIVE ENERGY BEAM-CURABLE COMPOSITION AND RESIN MOLDED BODY
Provided is an active energy beam-curable composition 10 comprising a radical reactive material and a leveling agent, wherein the radical reactive material includes a hydrophobic material 11 and a hydrophilic material 12, the leveling agent is a hydrophobic silicone material that includes a radical reactive group, and less than 10 mass% of the active energy beam-curable composition 10 is a non-reactive volatile organic solvent having a melting point of not more than 200°C.
C08F 2/46 - Polymerisation initiated by wave energy or particle radiation
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
A vehicular lamp fitting according to the present invention comprises: a light guiding body; a first light source; and a second light source, wherein the light guiding body includes a first rod-shaped light guiding portion which guides first light emitted by the first light source, a second rod-shaped light guiding portion which guides second light emitted by the second light source, an intermediate portion which is arranged between the first rod-shaped light guiding portion and the second rod-shaped light guiding portion, a first coupling portion which couples a base end portion side of the first rod-shaped light guiding portion and the intermediate portion together such that a part of the first light, which enters the first rod-shaped light guiding portion through a light entering surface of the first rod-shaped light guiding portion, enters an inside of the intermediate portion.
F21S 43/237 - Light guides characterised by the shape of the light guide rod-shaped
F21S 43/247 - Light guides with a single light source being coupled into the light guide
F21S 43/50 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by aesthetic components not otherwise provided for, e.g. decorative trim, partition walls or covers
54.
LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND LIGHT-EMITTING SEMICONDUCTOR DEVICE
This light-emitting semiconductor element comprises: a planar substrate having light-transmitting properties; a semiconductor structure layer formed on one main surface of the substrate and having light-emitting element parts in which a pair of mutually opposing side surfaces is inclined inward, the opposing side surfaces being rectangular in a top view from a direction perpendicular to the one main surface; and a wire grid formed on the other main surface of the substrate and comprising a plurality of linear metallic bodies periodically arranged in a row. In the top view, each of the metallic bodies extends in such a direction as to cross the pair of side surfaces at an angle other than 90°.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
X1-XY11-Y1Y21-Y21-Y2 layer formed on the electron blocking layer. The quantum well active layer comprises: a barrier layer having the same crystal composition; and at least one sub quantum well layer and a main quantum well layer which is a quantum well layer closest to the electron blocking layer, the sub quantum well layer and the main quantum well layer being separated from each other by the barrier layer. The at least one sub quantum well layer has the same crystal composition and the same layer thickness, the sub quantum well layer and the main quantum well layer have the same crystal composition, and the main quantum well layer has a layer thickness that is not less than 1.2 times the layer thickness of the sub quantum well layer.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
56.
METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT, AND SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT
According to the present invention, (a) a hole formation preparation layer is formed on a substrate, (b) holes are formed in the hole formation preparation layer such that the holes are two-dimensionally arranged on lattice points, thereby forming a hole formation layer, (c) facet growth for plugging the holes is performed so as to form a first embedded layer, (d) a second embedded layer for embedding the first embedded layer flatly is grown so as to form a vacancy layer that has vacancies corresponding to the holes, (e) flat etching of the second embedded layer is performed by means of annealing in a hydrogen atmosphere, and (f) crystal growth of a semiconductor layer comprising an active layer is performed on the flat etched second embedded layer.
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
57.
METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT, AND SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT
(a) A hole-forming preparation layer is formed on a substrate; (b) holes that are arranged two-dimensionally at respective lattice points are formed in the hole-forming preparation layer to form a hole-forming layer; (c) the surface of the hole-forming layer is oxidized to form an oxide film, and then the oxide film is removed; (d) facet growth for blocking the holes is performed to form a first buried layer; (e) growth of a second buried layer for flatly burying the first buried layer is performed to form a guide layer that includes a porous layer having voids corresponding to the holes; and (f) crystal growth of a semiconductor layer including an active layer is performed on the guide layer.
This photonic-crystal surface emitting laser element is provided with: a first guide layer which is formed on the lower guide layer and comprises a lower guide layer, a photonic crystal layer having vacancies that are two-dimensionally arranged on lattice points and an embedment layer formed on the photonic crystal layer and filling the vacancies; a hetero semiconductor layer which is formed on the embedment layer and is composed of a semiconductor having a crystal composition different from that of the embedment layer; an active layer which is formed on the hetero semiconductor layer; and a second guide layer which is formed on the active layer. The embedment layer is doped with an n-type dopant at a concentration of 1.0 × 1017to 1.0 × 1020cm-3.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
59.
RESIN COMPOSITION, METHOD FOR PRODUCING SYNTHETIC RESIN PELLET, AND MOLDED PRODUCT
This method for producing a resin composition comprises a step for obtaining a resin composition by melt-kneading: a vegetable fiber; a polyolefin-based resin; and a polyamine having at least one among a primary amine and a secondary amine.
C08L 23/00 - Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bondCompositions of derivatives of such polymers
C08J 5/04 - Reinforcing macromolecular compounds with loose or coherent fibrous material
C08L 1/00 - Compositions of cellulose, modified cellulose, or cellulose derivatives
Provided is a technology whereby the visibility of a pedestrian can be further improved. This control device for a vehicular lamp is for controlling the movement of a vehicular lamp for which a light distribution pattern is variable. A controller: controls the vehicular lamp such that a first beam is emitted when the relationship between a rainfall amount detected by a first sensor and a raindrop size detected by a second sensor matches a first weather condition at which light veiling phenomenon is anticipated not to occur; and controls the vehicular lamp such that a second beam for which illuminance is set lower than the first beam is emitted when the relationship between the rainfall amount detected by the first sensor and the raindrop size detected by the second sensor matches a second weather condition at which the light veiling phenomenon is anticipated to occur.
B60Q 1/04 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights
F21S 41/663 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by switching light sources
F21W 102/14 - Arrangement or contour of the emitted light for high-beam region or low-beam region the light having cut-off lines, i.e. clear borderlines between emitted regions and dark regions having vertical cut-off linesArrangement or contour of the emitted light for high-beam region or low-beam region the light having cut-off lines, i.e. clear borderlines between emitted regions and dark regions specially adapted for adaptive high beams, i.e. the beam is broader but avoids glaring other road users
F21W 102/17 - Arrangement or contour of the emitted light for regions other than high beam or low beam
F21W 102/19 - Arrangement or contour of the emitted light for regions other than high beam or low beam for curves
F21W 102/20 - Illuminance distribution within the emitted light
[Problem] The purpose of the present invention is to provide a vertical cavity light emitting element which has low threshold current and high luminous efficiency. [Solution] The present invention comprises: an n-type semiconductor layer which is formed on a first reflective mirror; an active layer which is formed on the n-type semiconductor layer and is composed of multiple quantum wells; a final barrier layer which is formed on the final quantum well of the active layer; an electron barrier layer which is formed on the final barrier layer; a p-type semiconductor layer which is formed on the electron barrier layer; a dielectric spacer layer which is formed on the p-type semiconductor layer; and a second reflective mirror which is formed on the spacer layer. The number of antinodes of a standing wave due to light emission from the active layer included in the electron barrier layer and the p-type semiconductor layer is 1, while the number of nodes is 0 or 1, and the number of nodes and the number of antinodes of a standing wave included in the final barrier layer are 1 or more, respectively.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A light source device 10 includes a laser diode 12 configured to emit laser light LDb, a fluorescent body 18 configured to generate primary fluorescence FL1 from the laser light LDb, a notch filter 38 configured to generate secondary fluorescence FL2 from the primary fluorescence FL1, an LED 30 configured to emit LED light LEb, and a dichroic mirror 40 configured to combine the secondary fluorescence FL2 and the LED light LEb.
F21V 9/30 - Elements containing photoluminescent material distinct from or spaced from the light source
F21V 9/20 - Dichroic filters, i.e. devices operating on the principle of wave interference to pass specific ranges of wavelengths while cancelling others
A61B 3/12 - Objective types, i.e. instruments for examining the eyes independent of the patients perceptions or reactions for looking at the eye fundus, e.g. ophthalmoscopes
F21Y 113/20 - Combination of light sources of different form
A lighting tool for a vehicle includes a first light source and a second light source, a first-light-guide-body that guides first light emitted from the first light source, and a second-light-guide-body that guides second light emitted from the second light source, the first-light-guide-body has a rod-shaped first light guide part, a first incidence part located on a base end side of the first light guide part, and a branch emission part that emits some of first light, which is guided in the first light guide part, to an outside of the first light guide part, and the second-light-guide-body has a rod-shaped second light guide part, a second incidence part located on a base end side of the second light guide part, and a branch incidence part that causes first light, which is emitted from the branch emission part, to enter the second light guide part.
B60Q 1/44 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating braking action
64.
VERTICAL RESONANCE-TYPE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING VERTICAL RESONANCE-TYPE LIGHT-EMITTING DEVICE
According to the present invention, the device comprises: a substrate; a first multilayer film reflector formed on the substrate; a semiconductor structure layer including a first semiconductor layer having a first conductivity type formed on the first multilayer film reflector, a light-emitting layer formed on the first semiconductor layer, and a second semiconductor layer which is formed on the light-emitting layer and has a second conductivity type opposite to the first conductivity type and in which region 1 in the center of the upper surface protrudes upward beyond a circumferential region around the region 1 of the upper surface; and a second multilayer film reflector which is formed on the semiconductor structure layer and forms a resonator between the first multilayer film reflector and the second multilayer film reflector. In the second semiconductor layer, a second portion along the circumferential region has a higher hydrogen concentration than a first portion along the region 1 of the upper surface.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
65.
ON-VEHICLE ILLUMINATION DEVICE AND PRODUCTION METHOD THEREFOR
Provided is an on-vehicle illumination device which is compact, does not have a space therein, and is capable of realizing a complex curved surface shape. The on-vehicle illumination device includes a light-emitting element disposed on a wiring pattern on a substrate, and an outer lens layer made of a resin and mounted on the light-emitting element. The substrate has a shape curved along a curvature of the outer lens layer in a front-rear direction.
An optical scanning device includes a mirror portion, a torsion bar extending along a resonance axis, an annular-shaped body coupled to the torsion bar from both sides of the resonance axis to rotate the mirror portion, and an intersection portion piezoelectric element and/or coupling portion piezoelectric elements formed in a rigidity adjustment region including an intersection portion of the torsion bar and the annular-shaped body to change a rigidity of the rigidity adjustment region when a voltage is applied.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
A second harmonic generation element includes a substrate, a first multilayer film reflecting mirror, a second harmonic generation layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The second harmonic generation layer is disposed on the first multilayer film reflecting mirror. The second harmonic generation layer is made of a SrB4O7 crystal that receives a fundamental wave with a predetermined wavelength and emits a second harmonic wave with a wavelength in an ultraviolet region. The second multilayer film reflecting mirror is formed on the second harmonic generation layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror.
An optical scanning apparatus includes a mirror, a detection section, and a dummy capacitance section. The detection section generates capacitance between movable and fixed electrodes. The dummy capacitance section generates dummy capacitance between first and second electrodes. The four electrodes are provided on the same active layer and are separated. The active layer is arranged to face a support layer with an insulating layer in between. A first parasitic capacitance generated between the active layer including the fixed electrode and the support layer is equivalent to a second parasitic capacitance generated between the active layer including the first electrode and the support layer. The capacitance of the detection section and the first parasitic capacitance are connected in series, and the dummy capacitance and the second parasitic capacitance are connected in series.
G01D 5/241 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
An apparatus for controlling the temperature of a heater provided in a liquid crystal element is configured to apply a drive voltage which is set to a value relatively higher than when the liquid crystal element is operated at a rated voltage value and/or a rated frequency, to at least a partial region of the liquid crystal element, and detects current consumption flowing through the partial region. The apparatus variably sets a temperature control target value of the heater according to the detected magnitude of the current consumption.
To accurately identify a vehicle state. An apparatus identifies a vehicle state and includes a controller connected with an angular velocity sensor and an acceleration sensor, where the controller acquires acceleration per unit time along a vehicle's longitudinal direction axis from the acceleration sensor, determines acceleration variation over a certain period of time, acquires angular velocity per unit time around vehicle's roll axis from the angular velocity sensor, determines the angular velocity variation during the certain period of time, and identifies the vehicle as a first state when the acceleration variation is greater than a first threshold value and the angular velocity variation is greater than a second threshold value, and identifies the vehicle as a second state when the acceleration variation is less than the first threshold value and the angular velocity variation is less than the second threshold value, and outputs the identified result.
B60Q 1/08 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights adjustable, e.g. remotely-controlled from inside vehicle automatically
A lamp device includes: a housing to be attached to a vehicle; a lamp unit, a radar unit including an antenna that transmits a radar wave and receives a reflected wave from an object; a light-transmitting cover that is attached to cover a front of the housing so as to accommodate the lamp unit and the radar unit in an internal space thereof, the light-transmitting cover transmitting the radar wave; and an extension disposed in the internal space of the housing, the extension including an electromagnetic-wave absorber.
To make conduction time (lighting time) of a light emitting element more uniform.
To make conduction time (lighting time) of a light emitting element more uniform.
A lighting control method in which a controller is used to drive a plurality of light source units connected in parallel to each other in a time-division manner, (a) where the controller includes: (b) to perform control of one switch element among a plurality of switch elements connected in series to each of the plurality of light source units to switch to a close state; (c) to start measuring a specified time when a current flowing through a current path between a power supply circuit and the plurality of light source units is equal to or greater than a threshold value; and (d) to perform control of the one switch element to switch to an open state when the specified time has elapsed.
This light-emitting device comprises a light-emitting element which includes a semiconductor structure layer with a light-emitting layer, and a transparent unit which includes: a transparent substrate that is formed on the light-emitting element and has transparency; a transparent layer that is formed on the transparent substrate and has a smaller refractive index than the transparent substrate; a wire grid that is composed of a plurality of linear metal bodies that are periodically arranged in a row on the top surface of the transparent layer; and a transparent cover film that covers the top surface of the transparent layer exposed from the wire grid and has a greater refractive index than the transparent layer.
The present invention comprises: a light-transmitting substrate; a first semiconductor layer that is formed on the substrate and on which a void layer that is a photonic crystal layer is formed; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a current confinement layer that is formed on the second semiconductor layer and that includes a circular or a rotationally symmetrical contact opening; a contact electrode formed by filling the contact opening of the current confinement layer; and a pad electrode which is formed on the contact electrode, and in which a thermal conduction adjustment layer having thermal conductivity less than an effective thermal conductivity of the second semiconductor layer is embedded. The thermal conduction adjustment layer includes a thermal conduction adjustment opening having a center axis that is coaxial with the contact opening, and the thermal conduction adjustment opening has an opening diameter (W2) smaller than an opening diameter (W1) of the contact opening.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
75.
LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND LIGHT-EMITTING SEMICONDUCTOR DEVICE
Provided are a light-emitting semiconductor element and a light-emitting semiconductor device which have high reliability even in severe environments involving high temperatures, high humidities, corrosive gases, etc. The light-emitting semiconductor element comprises: a light-emitting function semiconductor layer which is disposed on a light-transmitting substrate and which comprises a layered semiconductor layer obtained by successively forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, and which has light-emitting-function parts separated by a separation groove; a first electrode on a bottom surface of the separation groove; a second electrode on the second semiconductor layer; a first insulating film covering the light-emitting-function parts, the separation groove, and the first and second electrodes; a connection pad electrode connected to the second electrode via an opening and covering the whole of the light-emitting-function parts and the separation groove; an annular recess surrounding the whole of the light-emitting-function parts and the first electrode; and an annular sealing electrode wall which is disposed upright in an annular shape on the first semiconductor layer so as to be in contact in a non-conductive manner with the first semiconductor layer exposed from the bottom surface of the annular recess, and which surrounds the whole of the light-emitting-function parts and the first electrode. The annular sealing electrode wall is in direct contact with one end of the first electrode and is electrically connected to the first electrode.
2020) of the projection lens; and a second luminous intensity distribution forming means (30B) for forming a second luminous intensity distribution (p2) corresponding to a high beam light distribution pattern below the focal point of the projection lens. The focal point of the projection lens is set near the lower end edge of the first luminous intensity distribution. The projection lens forms the low beam light distribution pattern and the high beam light distribution pattern by projecting the first luminous intensity distribution and the second luminous intensity distribution. The second luminous intensity distribution, as compared to the first luminous intensity distribution, is formed closer to the projection lens side.
F21S 41/663 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by switching light sources
F21S 41/143 - Light emitting diodes [LED] the main emission direction of the LED being parallel to the optical axis of the illuminating device
F21S 41/151 - Light emitting diodes [LED] arranged in one or more lines
F21S 41/40 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
F21W 102/155 - Arrangement or contour of the emitted light for high-beam region or low-beam region the light having cut-off lines, i.e. clear borderlines between emitted regions and dark regions having inclined and horizontal cut-off lines
An optical scanning device includes a light source and a MEMS optical deflector mounted on the same substrate, at least one optical path generation mirror configured to generate an optical path which causes a light beam emitted from the light source to enter the MEMS optical deflector, and a lens arranged between the light source and the first optical path generation mirror. A shielding plate has an elliptical aperture and is attached to the optical path generation mirror. The light beam from the lens has a peripheral edge on a cross section thereof, which is cut by the elliptical aperture.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
A vehicle lamp includes a light source configured to emit light, a liquid crystal element configured to variably modulate a polarization state of the light emitted from the light source, a condensing optical system configured to condense the light emitted from the light source toward the liquid crystal element, a polarization beam splitter configured to transmit light containing one of polarized components of the light condensed by the condensing optical system toward the liquid crystal element and configured to reflect light containing the other polarized component of the light condensed by the condensing optical system toward the light source, and a scattering and reflecting member disposed at a surrounding of the light source and configured to scatter and reflect the light reflected by the polarization beam splitter toward the condensing optical system.
F21S 41/64 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on refractors, filters or transparent cover plates by changing their light transmissivity, e.g. by liquid crystal or electrochromic devices
An optical deflector driving method includes inputting an instruction to change at least one of a first driving signal corresponding to a first driving voltage and a second driving signal corresponding to a second driving voltage, the first driving voltage and the second driving voltage being applied to an actuator swinging a mirror portion of an optical deflector around a swing axis; determining, in a case where the instruction is input, a timing when a voltage of a driving signal to be changed out of the first driving signal and the second driving signal becomes minimum; and reflecting, in a case where it is determined that the timing when the voltage of the driving signal to be changed becomes minimum comes, the change on the driving signal to be changed.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
A saddle type vehicle lamp (1) installed on a saddle type vehicle (100) comprises a lamp unit that emits light forward of the saddle type vehicle (100). The lamp unit emits light (L) toward the road surface (T) and toward at least a portion of a vehicle body (101) of the saddle type vehicle (100), separately from the light emitted forward of the saddle type vehicle (100).
F21S 43/40 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the combination of reflectors and refractors
F21S 43/243 - Light guides characterised by the emission area emitting light from one or more of its extremities
F21S 43/245 - Light guides characterised by the emission area emitting light from one or more of its major surfaces
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
F21W 102/10 - Arrangement or contour of the emitted light
An optical scanning device includes a VCSEL and an emission unit mounted on the same substrate, and a bottom plate portion arranged on the lower side of the substrate. A columnar protruding portion has a tapered shape and is plastically deformable, and is fixed to the bottom plate portion. The columnar protruding portion has a distal end side inserted into a through hole portion of the substrate. At least one of an upper portion of the columnar protruding portion and the through hole portion is plastically deformed so that they are fitted to each other. A relative inclination angle between the substrate and the bottom plate portion is defined by a fitting angle between the through hole portion and the columnar protruding portion.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
To improve the brightness of irradiated light in the lighting apparatus using a liquid crystal element. A lighting apparatus includes: a light source; a condensing unit that condenses light emitted from the light source so that it forms a focal point at a predetermined position; a liquid crystal element arranged corresponding to the position of the focal point; a first polarizing element disposed on a light incident surface of the liquid crystal element; a second polarizing element disposed on a light emitting surface of the liquid crystal element; and a projection lens that magnifies and projects images generated by the liquid crystal element and the first and second polarizing element; where the liquid crystal element is arranged at a tilt such that the light incident surface and the light emitting surface form a predetermined angle that is non-orthogonal and non-parallel to the optical axis of the projection lens.
F21S 41/64 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on refractors, filters or transparent cover plates by changing their light transmissivity, e.g. by liquid crystal or electrochromic devices
F21S 41/135 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of emitted light polarised
F21S 41/147 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device
A light emitting device of the present invention includes a substrate, a semiconductor element, a first external electrode, and a second external electrode. The substrate has a first conductivity type and contains a single-crystal silicon. The substrate has an upper surface and a lower surface on which thermally-oxidized films are formed. A first opening portion and a second opening portion are formed to be mutually spaced in the thermally-oxidized film formed on the lower surface. The substrate includes a diode structure unit that includes a first well region and a second well region. The first well region is formed in a first region along the lower surface, is exposed at the first opening portion, and has a second conductivity type different from the first conductivity type. The second well region is formed in a second region along the lower surface in the first region, is exposed at the second opening portion, and has the first conductivity type. The semiconductor element is disposed on the substrate and includes a semiconductor layer. The first external electrode is formed on a lower surface of the thermally-oxidized film and in contact with the first well region at the first opening portion. The second external electrode is formed on the lower surface of the thermally-oxidized film, spaced from the first external electrode, and in contact with the second well region at the second opening portion. The second well region extends to the first opening portion side exceeding a middle line between the first opening portion and the second opening portion along the lower surface of the substrate.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A light-emitting unit includes a light source and a lens body disposed in front of the light source, and the lens body includes a projection lens part configured to project a graphic pattern toward a road surface by light emission of the light source, and a light emission lens part configured to cause surrounding of the projection lens part emit light by light emitted from the light source.
F21S 41/265 - Composite lensesLenses with a patch-like shape
B60Q 1/34 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating change of drive direction
F21S 43/245 - Light guides characterised by the emission area emitting light from one or more of its major surfaces
Provided is a photonic crystal surface-emitting laser device in which a rise in oscillation threshold current and drive current of a photonic crystal surface-emitting laser element is suppressed, and that has a stable oscillation mode and excellent beam quality. Comprised are: a surface-emitting laser element; a mounting substrate on which the surface-emitting laser element is mounted and that is connected to the element; and an electrically conductive element-bonding member that bonds the surface-emitting laser element and the mounting substrate and that mitigates the distortion of the surface-emitting element due to the mounting substrate. The surface-emitting laser element comprises: a translucent element substrate; a first semiconductor layer on the element substrate; an active layer on the first semiconductor layer; a second semiconductor layer of the opposite electrically conductive type to the first semiconductor layer, the second semiconductor layer being provided on the active layer; a void layer provided with voids arranged in a two-dimensional periodic manner within a plane, the void layer being included in the first or the second semiconductor layer; and a light reflective layer having a reflective surface and being provided on the second semiconductor layer. A light emission surface is provided on the side opposite to the first semiconductor layer side of the element substrate.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/0236 - Fixing laser chips on mounts using an adhesive
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
A probe according to the present invention comprises: a ring-type base material that is to be worn on a finger of a subject; a flexible film that is mounted to the inner circumferential surface of the ring-type base material; and a light-emitting element and a light-receiving element that are mounted to the film at positions, on the ring-type base material, that face each other across the finger. The ring-type base material has a C-shaped cross section and is flexible. The light-emitting element and the light-receiving element are bare chips, and are directly joined to a wiring provided at the surface of the film. Areas surrounding the light-emitting element and the light-receiving element are sealed with a transparent sealant.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
A lighting device according to the present invention comprises: a light-emitting element that has a light output surface which outputs light; a wavelength conversion member that is disposed on the light output surface of the light-emitting element and that has, on an upper surface, a plurality of light output regions which are separate from each other; and an optical structure that has a plurality of lens parts which are formed above and in correspondence with the plurality of light output regions. The plurality of light output regions include a first light output region having a first shape and a second light output region having a second shape. On an irradiation surface irradiated with light that has passed through the optical structure, a first irradiation region which is illuminated with light that is output from the first light output region and a second irradiation region which is illuminated with light that is output from the second light output region are differing regions having an overlap region.
F21S 41/265 - Composite lensesLenses with a patch-like shape
F21S 41/143 - Light emitting diodes [LED] the main emission direction of the LED being parallel to the optical axis of the illuminating device
F21V 9/30 - Elements containing photoluminescent material distinct from or spaced from the light source
F21W 102/155 - Arrangement or contour of the emitted light for high-beam region or low-beam region the light having cut-off lines, i.e. clear borderlines between emitted regions and dark regions having inclined and horizontal cut-off lines
This light-emitting device has: a substrate; a light-emitting part that is provided on the substrate, includes a semiconductor light-emitting element that includes a light-emitting layer, and has an upper surface from which emission light from the light-emitting layer is emitted; an optical function part that comprises a light-transmitting member and has a base part that continuously extends so as to cover the upper surface of the light-emitting part and a plurality of protrusions that are formed on the base part; a spacer part that separates the upper surface of the light-emitting part and a lower surface of the base part, which are opposite each other, at prescribed spacing, thereby forming a gap between the upper surface of the light-emitting part and the lower surface of the base part; a light-reflecting part that comprises a light-reflecting material and covers at least a portion of a side surface of the light-emitting part, a side surface of the spacer part, or a side surface of the base part; and a low-refractive-index part that is provided in the gap and is formed from a low-refractive-index substance that has a lower refractive index than the optical function part.
This wavelength converting member comprises a flat plate-shaped phosphor portion upon which exciting light is incident from one surface and which includes phosphor that emits fluorescence when excited by the exciting light, a plurality of first nano-antennas comprising transparent dielectrics provided periodically on one region of another surface of the phosphor portion on the opposite side to said one surface, and a plurality of second nano-antennas comprising a transparent dielectric provided periodically on a region around the one region of said other surface, wherein each of the plurality of first nano-antennas has a larger diameter than each of the plurality of second nano-antennas, in a plan view seen from a direction perpendicular to said other surface.
The present invention comprises a first light source (3A) and a second light source (3B) that are adjacent to each other, a circuit board (4) on which the first light source (3A) and second light source (3B) are mounted, a socket body (7) in which the circuit board (4) is disposed on the front side, and a shade (8) that is positioned on the front side of the first light source (3A) and second light source (3B) and is disposed so as to cross between the first light source (3A) and the second light source (3B).
F21S 43/237 - Light guides characterised by the shape of the light guide rod-shaped
F21S 43/245 - Light guides characterised by the emission area emitting light from one or more of its major surfaces
F21S 43/249 - Light guides with two or more light sources being coupled into the light guide
F21S 43/50 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by aesthetic components not otherwise provided for, e.g. decorative trim, partition walls or covers
F21S 45/47 - Passive cooling, e.g. using fins, thermal conductive elements or openings
F21V 11/16 - Screens not covered by groups , , or using sheets without apertures, e.g. fixed
F21V 19/00 - Fastening of light sources or lamp holders
F21W 103/00 - Exterior vehicle lighting devices for signalling purposes
A vehicular lamp fitting capable of suppressing vibration of a reflector (vibration that is occurred during vehicle travel, etc.) is provided. A vehicular lamp fitting comprising a first holding member that holds both a light source and a light control member that controls light emitted by the light source; a second holding member that holds the first holding member so as to be tiltable in the up, down, left and right directions; a vibration suppression unit that suppresses vibration of the first holding member relative to the second holding member; and the vibration suppression unit comprising: a first portion provided on the first holding member; a second portion, which is provided on the second holding member and suppresses the vibration of the first holding member with respect to the second holding member by abutting the first portion vibrating in the vibration direction of the first holding member.
The purpose of the present invention is to provide: a vertical cavity light emitting element which has a long service life and high efficiency, and with which it is possible to suppress any reduction in the service life of the element, while ensuring high efficiency in carrier injection; and a method for producing this vertical cavity light emitting element. A vertical cavity light emitting element according to the present invention comprises a p-type AlGaN layer that has a configuration in which three or more AlGaN layers that contain Mg as a p-type dopant and have different Al compositions are stacked. If the p-type AlGaN layer, which is defined on an Al composition curve in the layer thickness direction by SIMS, is divided into a first region having 1/10 of the layer thickness of the p-type AlGaN layer, a second region having 2/5 of the layer thickness, and a third region having 1/2 of the layer thickness in the stated order from the active-layer side, the magnitude relationship among the regions in terms of the Al compositions is such that the first region is lower than the third region, which in turn is lower than the second region. The Mg concentration indicated by an Mg concentration curve is less than 1.2 × 1019atoms/cm3over the entire layer thickness of the p-type AlGaN layer, and is lowest in the first region; within a region from the peak position at which the Mg concentration is maximum within the second region to the peak position at which the Mg concentration is maximum within the third region, the Mg concentration is not less than 3 × 1018atoms/cm3and the difference between the maximum value and the minimum value of the Mg concentration is not more than 1.5 × 1018atoms/cm3.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
93.
VEHICLE LIGHT FIXTURE SYSTEM AND METHOD FOR CONTROLLING VEHICLE LIGHT FIXTURE UNIT
The present disclosure provides a vehicle light fixture system capable of controlling an optical axis of a vehicle light fixture, without preparing a dedicated light source. A vehicle light fixture system including: circuitry configured to detect a position of a masking target object present in front of a vehicle; set, based on the position of the masking target object, a non-illumination area in which the masking target object is not illuminated; control the vehicle light fixture unit to illuminate an illumination area other than the non-illumination area; store in advance a position of a reference spot pattern that is formed, on a screen disposed ahead of the vehicle, by light emitted from the vehicle light fixture unit installed on the vehicle, in a state in which an optical axis is aligned with a designed optical axis; calculate a misalignment amount; and store the misalignment amount.
B60Q 1/08 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights adjustable, e.g. remotely-controlled from inside vehicle automatically
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
H04N 23/57 - Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
94.
VEHICLE HEADLIGHT CONTROL DEVICE, VEHICLE HEADLIGHT CONTROL METHOD, AND VEHICLE HEADLIGHT SYSTEM
The present invention improves forward visibility during ADB control. Provided is a vehicle headlight control device for controlling the operation of a vehicle headlamp, wherein the control device: sets a dimming range within the irradiation range of a high beam in accordance with the position of an object in front of the vehicle; sets a luminous intensity in a partial range set between a virtual reference line parallel to the vehicle width direction of the vehicle and a predetermined position below the virtual reference line in at least an area on the opposite lane side in front of the vehicle to a first luminous intensity when lighting of the high beam and the low beam is instructed; sets the luminous intensity to a second luminous intensity lower than the first luminous intensity when the high beam lighting is not instructed but the low beam lighting is instructed; and generates a control signal for operating a vehicle lamp on the basis of the setting result of the dimming range and the setting result of the luminous intensity in the partial range, and outputs the control signal to the vehicle headlight.
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
95.
CONTROL DEVICE FOR VEHICLE HEADLIGHT, CONTROL METHOD FOR VEHICLE HEADLIGHT, AND VEHICLE HEADLIGHT SYSTEM
The present invention improves the lighting effects of a low beam while suppressing dazzle during ADB control. A control device for a vehicle headlight according to the present invention is for controlling the operation of a vehicle headlight and has a variable light distribution ON mode that, when there is an object ahead of a vehicle, sets a reduced light range that corresponds to the position of the object within the irradiation range of a high beam. The control device sets the luminous intensity of a partial range within the irradiation range of a low beam that is a portion of the low beam in the vehicle width direction of the vehicle and goes from a first virtual reference line that is parallel to the vehicle width direction to a prescribed position below the first virtual reference line to a first luminous intensity when the variable light distribution ON mode is set, sets the luminous intensity of the partial range to a second luminous intensity that is higher than the first luminous intensity when the variable light distribution ON mode is not set, generates a control signal for operating the vehicle headlight on the basis of setting results for the reduced light range and setting results for the luminous intensity of the specific range, and outputs the control signal to the vehicle headlight.
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
A liquid sterilization device includes: an outer tube through which a fluid to be sterilized flows from one end side to the other end side in the axial direction; a flow-regulating plate that has a plurality of tapered holes having diameters thereof increasing from one end side toward the other end side in the axial direction; and a light source that applies ultraviolet light to a sterilization space on the other end side relative to the flow-regulating plate.
A light guide plate (1) has a transparent flat plate. An end surface of the flat plate is set as a light-receiving surface (Sin). A main surface of the flat plate is set as a light-emitting surface (Sout). A main surface of the flat plate on the opposite side from the light-emitting surface (Sout) is set as a distributed light control surface (Scont). An end surface of the flat plate on the opposite side from the light-receiving surface (Sin) is set as an opposite light-receiving surface (Sin'). Pseudo-half-spindle-shaped reflection dots (1a) that have a recess shape are provided in the distributed light control surface (Scont). Each of the pseudo-half-spindle-shaped reflection dots (1a) has a first curved sloped surface (11) provided in the light-receiving surface (Sin), and a second curved sloped surface (12) that is provided in the opposite light-receiving surface (Sin') facing the first curved sloped surface (11), and that is connected to the first curved sloped surface (11). The first curved sloped surface (11) has a first arc shape as viewed from the distributed light control surface (Scont). The second curved sloped surface (12) has a second arc shape as viewed from the distributed light control surface (Scont). The first curved sloped surface (11) has the shape of a third arc shape as viewed from the light-receiving surface (Sin). The second curved sloped surface (12) has the shape of a third arc shape as viewed from the opposite light-receiving surface (Sin').
A light deflector 10 comprises: a mirror part 11; torsion bars 12a, 12b that each extend along a rotation axis Da from each side of the mirror part 11; inner actuators 13a, 13b that are coupled to an outer coupling region 36 of each of the torsion bars 12a, 12b from both sides and rotate the torsion bars 12a, 12b about the rotation axis Da in a reciprocating manner; and a slit 20a and a slit 20b that are closed at both ends, each extend along the rotation axis Da over a length range reaching an inner coupling region 38 and the outer coupling region 36, and are formed in the torsion bars 12a, 12b.
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
Provided is a vertical cavity light emitting element having a low threshold current density, high luminous efficiency, and improved lifespan. A vertical cavity surface light emitting laser 10 comprises: a semiconductor DBR12; an n-type semiconductor layer 13 formed on the semiconductor DBR 12; an active layer 15 provided on the n-type semiconductor layer 13; an intermediate layer 16 provided on the active layer 15; an electron barrier layer 17 provided on the intermediate layer 16 and having a composition containing Al; a p-type semiconductor layer 18 which is provided on the electron barrier layer 17, has a composition containing Al, and is doped with an impurity; and a semiconductor DBR 25 provided on the p-type semiconductor layer 18. The electron barrier layer 17 is a composition gradient layer in which the Al composition decreases in the direction away from the active layer 15. The impurity concentration of the impurity has a peak within the electron barrier layer 17, and decreases in the direction approaching the active layer 15 from the peak.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
