A food irradiation system including a plurality of compact linac systems is described herein. Each compact linac system, of the plurality of compact linac systems, includes: a high energy particle beam source providing a particle beam at up to 10MeV; an emission target assembly configured to generate bremsstrahlung x-rays when impacted by particles of the particle beam; and a drift tube through which the particle beam passes on a path from the high energy particle beam source to the emission target assembly. The emission target assembly is positioned at a distal end of the drift tube for direct impingement of the particle beam to generate the bremsstrahlung x-rays in a directed radiation beam. Ones of the plurality of compact linac systems are individually positioned such that, as a group, the plurality of compact linac systems provide directed radiation beam coverage at prescribed radiation dose levels for an overall cumulative volume.
A23B 4/015 - Preserving by irradiation or electric treatment without heating effect
A23L 3/26 - Preservation of foods or foodstuffs, in general, e.g. pasteurising, sterilising, specially adapted for foods or foodstuffs by irradiation without heating
G21K 5/10 - Irradiation devices with provision for relative movement of beam source and object to be irradiated
A23B 4/16 - Preserving with chemicals not covered by groups or in the form of gases, e.g. fumigationCompositions or apparatus therefor
A food irradiation system including a plurality of compact linac systems is described herein. Each compact linac system, of the plurality of compact linac systems, includes: a high energy particle beam source providing a particle beam at up to 10 MeV; an emission target assembly configured to generate bremsstrahlung x-rays when impacted by particles of the particle beam; and a drift tube through which the particle beam passes on a path from the high energy particle beam source to the emission target assembly. The emission target assembly is positioned at a distal end of the drift tube for direct impingement of the particle beam to generate the bremsstrahlung x-rays in a directed radiation beam. Ones of the plurality of compact linac systems are individually positioned such that, as a group, the plurality of compact linac systems provide directed radiation beam coverage at prescribed radiation dose levels for an overall cumulative volume.
A23L 3/26 - Preservation of foods or foodstuffs, in general, e.g. pasteurising, sterilising, specially adapted for foods or foodstuffs by irradiation without heating
3.
IMPULSE POWER SUPPLY FOR COMPACT SYSTEM FOR COUPLING RADIO FREQUENCY POWER DIRECTLY INTO RADIO FREQUENCY LINACS
A system and associated method are described. The system includes a controlled power supply for generating electrical pulses for a plasma discharge source. The controlled power supply includes an output pulse rail, a direct current power source, and energy storage capacitors, coupled to the direct current power source. The energy storage capacitors are configured to supply: a main negative rail voltage, a positive kick rail voltage, and at least one intermediate rail voltage. A controlled pulse power transistor group includes: a plurality of transistors interposed between the energy storage capacitors and the output pulse rail, and a transmission control configured to control power transmission. The transmission control is configured to specify a positive kick pulse waveform defined by user-specified parameters that configure operation of the plurality of transistors to control timing and voltage of the positive kick rail voltage and the at least one intermediate rail voltage.
A system and associated method are described. The system includes a controlled power supply for generating electrical pulses for a plasma discharge source. The controlled power supply includes an output pulse rail, a direct current power source, and energy storage capacitors, coupled to the direct current power source. The energy storage capacitors are configured to supply: a main negative rail voltage, a positive kick rail voltage, and at least one intermediate rail voltage. A controlled pulse power transistor group includes: a plurality of transistors interposed between the energy storage capacitors and the output pulse rail, and a transmission control configured to control power transmission. The transmission control is configured to specify a positive kick pulse waveform defined by user-specified parameters that configure operation of the plurality of transistors to control timing and voltage of the positive kick rail voltage and the at least one intermediate rail voltage.
A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/515 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
C23C 14/02 - Pretreatment of the material to be coated
6.
BELLOWS COATING BY MAGNETRON SPUTTERING WITH KICK PULSE
A radial magnetron system for plasma surface modification and deposition of high-quality coatings for multi-dimensional structures is described. The system includes an axial electrode, a target material disposed on a portion of the axial electrode, an applied potential from an external electrical power source, and a high-current contact attached to the axial electrode for the applied potential. The system further includes a primary permanent magnet assembly comprising individual magnetic material elements configured to produce a target-region magnetic field for generating a Hall-effect dense plasma region under application of the applied potential to the axial electrode, and a magnet substrate that supports the primary permanent magnet assembly within the axial electrode. The magnet substrate is configured to provide a passageway for cooling the primary permanent magnet assembly and the axial electrode.
A radial magnetron system for plasma surface modification and deposition of high-quality coatings for multi-dimensional structures is described. The system includes an axial electrode, a target material disposed on a portion of the axial electrode, an applied potential from an external electrical power source, and a high-current contact attached to the axial electrode for the applied potential. The system further includes a primary permanent magnet assembly comprising individual magnetic material elements configured to produce a target-region magnetic field for generating a Hall-effect dense plasma region under application of the applied potential to the axial electrode, and a magnet substrate that supports the primary permanent magnet assembly within the axial electrode. The magnet substrate is configured to provide a passageway for cooling the primary permanent magnet assembly and the axial electrode.
An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.
A system and associated method are described for depositing high-quality films for providing a coating on a three-dimensional surface such as an internal surface of a bellows structure. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.
An associated particle-based inspection apparatus is described. The apparatus includes a grounded target region and a neutron generator that produces a neutron and one or more corresponding charged particles. The apparatus further includes an associated particle imaging (API) detector comprising a particle detector that detects the one or more corresponding charged particles, wherein the particle detector comprises at least one particle detector element that facilitates determining a trajectory, origination time, and a velocity of the neutron based upon a detection, by a particular one of the at least one particle detector element, of the corresponding charged particles.
G01V 5/10 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using neutron sources
G01V 13/00 - Manufacturing, calibrating, cleaning, or repairing instruments or devices covered by groups
E21B 47/11 - Locating fluid leaks, intrusions or movements using tracersLocating fluid leaks, intrusions or movements using radioactivity
11.
Compact system for coupling RF power directly into RF linacs
A system and associated method are described for depositing high-quality films for providing a nanolayered coating on a three-dimensional surface. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.
A system is described that includes a sputter target and a magnetic element array including multiple sets of magnets arranged to have a Hall-Effect region that extends along a length of the sputter target. The elongated sputtering electrode material tube is interposed between the magnetic array and an object to be deposited with a sputtered material from the sputter target. During a direct current high-power impulse magnetron sputtering operation, the system performs a depositing on a surface of the object by generating and controlling an ion and neutral particle flux by: providing a vacuum apparatus containing a sputter target holder electrode; first generating a high-power pulsed plasma magnetron discharge with a high-current negative direct current (DC) pulse to the sputter a target holder electrode; and second generating a configurable positive voltage kick pulse to the sputter target holder electrode after terminating the negative DC pulse.
A system is described that includes a sputter target and a magnetic element array including multiple sets of magnets arranged to have a Hall-Effect region that extends along a length of the sputter target. The elongated sputtering electrode material tube is interposed between the magnetic array and an object to be deposited with a sputtered material from the sputter target. During a direct current high-power impulse magnetron sputtering operation, the system performs a depositing on a surface of the object by generating and controlling an ion and neutral particle flux by: providing a vacuum apparatus containing a sputter target holder electrode; first generating a high-power pulsed plasma magnetron discharge with a high-current negative direct current (DC) pulse to the sputter a target holder electrode; and second generating a configurable positive voltage kick pulse to the sputter target holder electrode after terminating the negative DC pulse.
A wellbore inspection apparatus and a corresponding method of operation are described. The wellbore inspection apparatus comprises a neutron generator that produces, by a fusion reaction, a neutron and a corresponding charged particle. An associated particle imaging (API) detector comprises a particle detector array that detects the corresponding charged particle. The particle detector array comprises a plurality of particle detector elements that facilitate determining a trajectory of the neutron based upon a detection, by a particular one of the plurality of particle detector elements, of the corresponding charged particle. A gamma-ray detector assembly comprises a set of gamma-ray detector elements, and a set of collimating structures, where adjacent pairs of the set of collimating structures define a gamma-ray path for a gamma-ray arising from an inelastic collision of the neutron.
G01V 5/14 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using a combination of several sources, e.g. a neutron and a gamma source
G01V 5/10 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using neutron sources
E21B 47/005 - Monitoring or checking of cementation quality or level
15.
NEUTRON-GAMMA IMAGING SYSTEM TO RENDER AZIMUTHAL IMAGES IN OIL AND GAS WELL STRUCTURES
A wellbore inspection apparatus and a corresponding method of operation are described. The wellbore inspection apparatus comprises a neutron generator that produces, by a fusion reaction, a neutron and a corresponding charged particle. An associated particle imaging (API) detector comprises a particle detector array that detects the corresponding charged particle. The particle detector array comprises a plurality of particle detector elements that facilitate determining a trajectory of the neutron based upon a detection, by a particular one of the plurality of particle detector elements, of the corresponding charged particle. A gamma-ray detector assembly comprises a set of gamma-ray detector elements, and a set of collimating structures, where adjacent pairs of the set of collimating structures define a gamma-ray path for a gamma-ray arising from an inelastic collision of the neutron.
G01V 5/04 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging
G01V 5/08 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays
G01V 5/14 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using a combination of several sources, e.g. a neutron and a gamma source
An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.
H02M 3/145 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
H01L 29/72 - Transistor-type devices, i.e. able to continuously respond to applied control signals
17.
Pulsed power module with pulse and ion flux control for magnetron sputtering
An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.
A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.
A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/515 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
C23C 14/02 - Pretreatment of the material to be coated
09 - Scientific and electric apparatus and instruments
Goods & Services
High voltage multipliers; Inspection machines for the physical inspection of various goods and materials using neutrons, x-rays and gamma-rays; Oil and gas well downhole survey and measurement equipment; Particle accelerators
Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free processing. The preferred embodiment is an all-in-one processing reactor suitable for photovoltaic cell manufacturing, performing saw-damage removal, oxide stripping, deposition, doping and formation of hetero structures. The invention is scalable for atomic-layer deposition, etching, and other surface interaction processes.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
24.
A COMPACT SYSTEM FOR COUPLING RF POWER DIRECTLY INTO RF LINACS
A system for injecting radio frequency (RF) pulses into an RF linear accelerator (RF LINAC) cavity is described. In accordance with the description an RF power amplifying element, typically a compact planar triode (CPT), is directly mounted to an outside of a hermetically sealed RF cavity. The direct mounting of the RF power amplifying element places the antenna-responsible for coupling power into the RF cavity-physically on the RF cavity side of a hermetic high-voltage (HV) break. The RF input, RF circuitry, biasing circuitry, and RF power amplifier are all outside of the vacuum cavity region. The direct mounting arrangement facilitates easy inspection and replacement of the RF power amplifier, the RF input and biasing circuitry. The direct mounting arrangement also mitigates the deleterious effects of multipactoring associated with placing the RF power amplifier and associated RF circuitry in the vacuum environment of the RF LINAC cavity.
A system for injecting radio frequency (RF) pulses into an RF linear accelerator (RF LINAC) cavity is described. In accordance with the description an RF power amplifying element, typically a compact planar triode (CPT), is directly mounted to an outside of a hermetically sealed RF cavity. The direct mounting of the RF power amplifying element places the antenna—responsible for coupling power into the RF cavity—physically on the RF cavity side of a hermetic high-voltage (HV) break. The RF input, RF circuitry, biasing circuitry, and RF power amplifier are all outside of the vacuum cavity region. The direct mounting arrangement facilitates easy inspection and replacement of the RF power amplifier, the RF input and biasing circuitry. The direct mounting arrangement also mitigates the deleterious effects of multipactoring associated with placing the RF power amplifier and associated RF circuitry in the vacuum environment of the RF LINAC cavity.
The design of a compact, high-efficiency, high-flux capable compact-accelerator fusion neutron generator (FNG) is discussed. FNG's can be used in a variety of industrial analysis applications to replace the use of radioisotopes which pose higher risks to both the end user and national security. High efficiency, long lifetime, and high power-handling capability are achieved though innovative target materials and ion source technology. The device can be sealed up for neutron radiography applications, or down for borehole analysis or other compact applications. Advanced technologies such as custom neutron output energy spectrum, pulsing, and associated particle imaging can be incorporated.
Systems and methods are described herein for coupling electromagnetic (EM) energy from a remotely-located primary antenna into a plasma ion source. The EM energy is radiated by a first by through an intermediary secondary antenna. The embodiments described herein enable the elevation of the plasma ion source to a high electric potential bias relative to the primary antenna, which can be maintained at or near a grounded electric potential.
Embodiments utilize high energy particles generated by nuclear reactions involving neutron radiation and neutron-sensitive materials to generate and maintain an electric potential gradient between an electrode and a region separated from the electrode by an electric insulator. System and methods contemplated by the invention thereby enable passive detection of neutrons without an externally applied electric potential bias by maintaining a charge accumulation facilitated by nuclear reactions involving neutrons. The charge accumulation produces an electric potential gradient within an electric insulator that separates the charge accumulation from an exterior region.
Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free processing. The preferred embodiment is an all-in-one processing reactor suitable for photovoltaic cell manufacturing, performing saw-damage removal, oxide stripping, deposition, doping and formation of heterostructures. The invention is scalable for atomic-layer deposition, etching, and other surface interaction processes.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
30.
COMPACT HIGH-VOLTAGE PLASMA SOURCE FOR NEUTRON GENERATION
Systems and methods are described herein for coupling electromagnetic (EM) energy from a remotely-located primary antenna into a plasma ion source. The EM energy is radiated by a first by through an intermediary secondary antenna. The embodiments described herein enable the elevation of the plasma ion source to a high electric potential bias relative to the primary antenna, which can be maintained at or near a grounded electric potential.
Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free processing. The preferred embodiment is an all-in-one processing reactor suitable for photovoltaic cell manufacturing, performing saw-damage removal, oxide stripping, deposition, doping and formation of heterostructures. The invention is scalable for atomic-layer deposition, etching, and other surface interaction processes.
Embodiments utilize high energy particles generated by nuclear reactions involving neutron radiation and neutron-sensitive materials to generate and maintain an electric potential gradient between an electrode and a region separated from the electrode by an electric insulator. System and methods contemplated by the invention thereby enable passive detection of neutrons without an externally applied electric potential bias by maintaining a charge accumulation facilitated by nuclear reactions involving neutrons. The charge accumulation produces an electric potential gradient within an electric insulator that separates the charge accumulation from an exterior region.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Plasma based and nuclear based technology, namely, neutron generators for the purpose of generating neutrons for scientific and industrial purposes; plasma sources, namely, scientific devices for ionizing gas to create plasma for scientific and industrial purposes, neutron and plasma applicators, namely, devices which apply and direct neutrons and plasma for scientific and industrial purposes; wellbore applicators, namely, scientific devices for directing neutrons to a specific location in a hole drilled for exploration or the extraction of natural resources, for scientific and industrial purposes; imaging sensors consisting of photo sensors and computer chips for use in scientific and consumer apparatuses for the purpose of translating optical images intro electrical signals; plasma diagnostic sensor for the purpose of detecting and measuring the electrical characteristics, density, energy, direction, temperature, photon emission, and/or chemistry of plasma; nuclear sensors for the purpose of detecting and measuring the presence, quantity, energy, direction and distribution of neutrons and charged particles research and development services in the field of plasma engineering, with application to nuclear fusion, industrial and semiconductor processing, and space propulsion
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Plasma based and nuclear based technology, namely, neutron generators for the purpose of generating neutrons for scientific and industrial purposes; plasma sources, namely, scientific devices for ionizing gas to create plasma for scientific and industrial purposes, neutron and plasma applicators, namely, devices which apply and direct neutrons and plasma for scientific and industrial purposes; wellbore applicators, namely, scientific devices for directing neutrons to a specific location in a hole drilled for exploration or the extraction of natural resources, for scientific and industrial purposes; imaging sensors consisting of photo sensors and computer chips for use in scientific and consumer apparatuses for the purpose of translating optical images intro electrical signals; plasma diagnostic sensor for the purpose of detecting and measuring the electrical characteristics, density, energy, direction, temperature, photon emission, and/or chemistry of plasma; nuclear sensors for the purpose of detecting and measuring the presence, quantity, energy, direction and distribution of neutrons and charged particles research and development services in the field of plasma engineering, with application to nuclear fusion, industrial and semiconductor processing, and space propulsion
35.
Method and system for in situ depositon and regeneration of high efficiency target materials for long life nuclear reaction devices
Aspects of the invention relate to several methods to deposit and regenerate target materials in neutron generators and similar nuclear reaction devices. In situ deposition and regeneration of a target material reduces tube degradation of the nuclear reaction device and covers impurities on the surface of the target material at the target location. Further aspects of the invention include a method of designing a target to generate neutrons at a high efficiency rate and at a selected neutron energy from a neutron energy spectrum.
The design of a compact, high-efficiency, high-flux capable compact-accelerator fusion neutron generator (FNG) is discussed. FNG's can be used in a variety of industrial analysis applications to replace the use of radioisotopes which pose higher risks to both the end user and national security. High efficiency, long lifetime, and high power-handling capability are achieved though innovative target materials and ion source technology. The device can be scaled up for neutron radiography applications, or down for borehole analysis or other compact applications. Advanced technologies such as custom neutron output energy spectrum, pulsing, and associated particle imaging can be incorporated.
The design of a compact, high-efficiency, high-flux capable compact-accelerator fusion neutron generator (FNG) is discussed. FNG's can be used in a variety of industrial analysis applications to replace the use of radioisotopes which pose higher risks to both the end user and national security. High efficiency, long lifetime, and high power-handling capability are achieved though innovative target materials and ion source technology. The device can be scaled up for neutron radiography applications, or down for borehole analysis or other compact applications. Advanced technologies such as custom neutron output energy spectrum, pulsing, and associated particle imaging can be incorporated.
Aspects of the invention relate to several methods to deposit and regenerate target materials in neutron generators and similar nuclear reaction devices. In situ deposition and regeneration of a target material reduces tube degradation of the nuclear reaction device and covers impurities on the surface of the target material at the target location. Further aspects of the invention include a method of designing a target to generate neutrons at a high efficiency rate and at a selected neutron energy from a neutron energy spectrum.
A novel plasma source configuration system based on an arrangement of microdischarges is presented with particular emphasis on the generation of radiation for next-generation lithographic integrated circuit manufacturing, microscopy and medical/biological imaging. The present invention makes substantive improvements to the current state-of-the-art by specifically addressing known deficiencies, problems limiting high-volume manufacturing and cost-of-ownership considerations. In particular, the present invention enables a series of innovative illumination configurations that can improve lithographic tool design and performance.
