Abstract

The present application discloses an enhanced field effect transistor and a manufacturing method therefor. The enhanced field effect transistor comprises an epitaxial structure, an MIS/MOS gate structure, a source, and a drain; the epitaxial structure comprises at least one heterojunction; a charge carrier channel is formed in the heterojunction; a gate groove is formed in a gate region of the epitaxial structure; the groove bottom of the gate groove is located in a first semiconductor layer, and the opening of the gate groove is located in a second semiconductor layer; the charge carrier channel is separated by the gate groove; the MIS/MOS gate structure comprises a third semiconductor layer, a gate dielectric layer, and a gate that are sequentially stacked in a selected direction; when a forward voltage is applied to the gate, electrons are inversely generated in the third semiconductor layer; the charge carrier channels located on two sides of the gate groove are electrically connected by means of the electrons. The present application has a higher gate forward breakdown voltage and a higher threshold voltage.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions

Abstract

A nanosynapse integrated device and a manufacturing method therefor. The nanosynapse integrated device comprises: a substrate (1); an insulation layer (2) provided on the substrate (1); and a plurality of nanosynapse units (3) provided on the insulation layer (2). Each nanosynapse unit (3) comprises a first microelectrode (31) and a second microelectrode (32) which are opposite, and a GaN-based nanowire (33) provided between the first microelectrode (31) and the second microelectrode (32), a first end of the GaN-based nanowire (33) being bonded to the first microelectrode (31), and a second end of the GaN-based nanowire (33) being bonded to the second microelectrode (32). The nanosynapse integrated device uses the GaN-based nanowires (33) as synapse elements in the device, and the GaN-based nanowires (33) have controllable direct band gaps and stable physical and chemical properties. In the nanosynapse integrated device, the plurality of nanosynapse units (3) are integrally arranged on the same substrate (1), and therefore the nanosynapse integrated device can be manufactured on a scale, and has a small size and high level of integration. The plurality of nanosynapse units (3) can be separately and independently controlled or can be subjected to overall array control according to an arranged array pattern.

IPC Classes  ?

• H01L 31/108 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type

Abstract

A GaN-based High Electron Mobility Transistor (HEMT) having a multi-threshold voltage, a preparation method, and an application therefor are provided. The HEMT structure includes a channel layer and a barrier layer; a Two-dimensional Electron Gas (2DEG) is formed between the channel layer and the barrier layer; the barrier layer is at least provided with a first source area, a second source area, a first gate area, a second gate area, a first drain area, and a second drain area; the first source area, the first gate area, and the first drain area cooperate with each other, so as to form a first HEMT unit; the second source area, the second gate area, and the second drain area cooperate with each other, so as to form a second HEMT unit. that the HEMT may well meet application requirements of high and low threshold logic circuits.

IPC Classes  ?

• H01L 29/66 - Types of semiconductor device
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

A high-power bidirectional-driven bionic muscle fiber as well as a preparation method and use thereof are provided. The bionic muscle fiber includes a matrix fiber and an object material layer coating the matrix fiber, where the matrix material is capable of emitting heat after electrification, and the object material layer includes a liquid crystal elastomer (LCE); the bionic muscle fiber is excessively twisted to form a helical barrel-like structure. The bionic muscle fiber provided by the present application improves the mechanical property of the LCE, shows large work capability and drive quantity, and has an realize rapid response and work at high frequency. The contraction of the fiber can be controlled by changing voltage. Furthermore, the bionic muscle fiber exhibits a bidirectional driving feature that can recover without stress. In addition, the cyclic work of the fiber is greater than zero.

IPC Classes  ?

• D02G 3/44 - Yarns or threads characterised by the purpose for which they are designed
• C08G 75/045 - Polythioethers from mercapto compounds or metallic derivatives thereof from mercapto compounds and unsaturated compounds
• C08J 5/24 - Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
• D02G 3/02 - Yarns or threads characterised by the material or by the materials from which they are made
• D02G 3/28 - Doubled, plied, or cabled threads
• D02G 3/36 - Cored or coated yarns or threads
• D06M 10/00 - Physical treatment of fibres, threads, yarns, fabrics or fibrous goods made from such materials, e.g. ultrasonic, corona discharge, irradiation, electric currents or magnetic fieldsPhysical treatment combined with treatment with chemical compounds or elements
• D06M 10/10 - Macromolecular compounds
• D06M 101/30 - Synthetic polymers consisting of macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
• D06M 101/34 - Polyamides
• D06M 101/40 - Fibres of carbon
• F03G 7/06 - Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for using expansion or contraction of bodies due to heating, cooling, moistening, drying, or the like
• H02N 10/00 - Electric motors using thermal effects

Abstract

Provided in the present invention are a super-tough cellulose aerogel fiber, and a preparation method therefor and the use thereof. The preparation method comprises: with cellulose macromolecules as a raw material, preparing a cellulose molecule-level solution by means of a wet spinning technique; and with the cellulose molecule-level solution as a spinning solution, subjecting the cellulose macromolecules to in-situ self-assembly and a hydrogen bond cross-linking reaction during the spinning process, so as to form a hierarchical nanofiber structure, wherein the nanofiber structure is a continuous three-dimensional hierarchical-pore network structure. The cellulose aerogel fiber prepared by means of the technical solution of the present invention not only has good physical properties such as a high strength and high toughness, but also has good adsorption and thermal insulation properties due to the hierarchical pore structure; therefore, the cellulose aerogel fiber can be applied to not only the technical field of weaving, but also the technical field of air purification, heavy metal adsorption, atmospheric inhalable particle adsorption, indoor harmful gas adsorption, filtering materials or thermal insulation materials, and can thus be widely used.

IPC Classes  ?

• D01F 2/00 - Monocomponent artificial filaments or the like of cellulose or cellulose derivativesManufacture thereof
• D01D 5/06 - Wet spinning methods
• D01F 11/02 - Chemical after-treatment of man-made filaments or the like during manufacture of cellulose, cellulose derivatives, or proteins

Abstract

An electrode sheet, and a preparation method therefor and application thereof. The electrode sheet comprises a current collector, and an active substance layer, which is arranged on the surface of the current collector, wherein the active substance layer comprises a carbon conductive network, a conductive agent and an active substance, the conductive agent and the active substance being dispersed in the carbon conductive network, and the carbon conductive network being obtained from a carbonized polymer precursor; and a continuous carbon network is included in the electrode sheet to tightly connect a porous electrode sheet layer to the current collector, and the active substance, conductive carbon black and other particles in the porous electrode sheet layer are uniformly dispersed in the continuous carbon network structure, thereby greatly improving the conductivity of an electrode while ensuring that a physical contact of the electrode sheet is not damaged, and thus enhancing the rate capability and the reaction kinetics of a battery.

IPC Classes  ?

• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers

Abstract

An integrated gas diffusion layer for a fuel cell, and a preparation method therefor. A flow channel having high porosity and a ridge having a micro-channel structure are engraved on the surface of an existing gas diffusion layer by means of methods such as laser engraving, machining, and mechanical pressing, so that the integration of a flow field plate and a gas diffusion layer is achieved, the operation is simple, the processing cost is low, the prepared integrated gas diffusion layer has a good water management capability, and gas can be transmitted to a catalytic layer more quickly, thereby improving the performance of cells.

IPC Classes  ?

• H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
• H01M 4/88 - Processes of manufacture
• H01M 8/1004 - Fuel cells with solid electrolytes characterised by membrane-electrode assemblies [MEA]

Abstract

Disclosed in the present application are a Micro-LED chip, and a preparation method therefor and an application thereof. The Micro-LED chip comprises an LED chip structure and a first metasurface conductive structure layer, the first metasurface conductive structure layer comprising: a first conductive layer, which is electrically bonded to a light emergent surface of the LED chip structure; and a metasurface structure, which is arranged, in a stacked manner and/or an integrated manner, with the first conductive layer, wherein the metasurface structure is at least used for adjusting and controlling an emergent angle or wavelength of light emitted from the light emergent surface. On the basis of the technical solution of the present application, full-color of a Micro-LED chip can be realized, the light emergent rate and the collimation can be increased, and the preparation of the Micro-LED chip and the integration of a Micro-LED pixel and a display unit can be realized by using a large-scale standard semiconductor process, thereby improving the production efficiency and yield of the Micro-LED chip and reducing the cost.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/58 - Optical field-shaping elements
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/42 - Transparent materials
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

The present application discloses a micro optoelectronic chip and a manufacturing method therefor and an application thereof. The micro optoelectronic chip comprises: a semiconductor structure layer which comprises a first doped semiconductor layer, an active layer and a second doped semiconductor layer which are sequentially stacked on a substrate; ion implantation regions distributed in the semiconductor structure layer and used for electrically isolating, in the semiconductor structure layer, a plurality of optoelectronic chip structures arranged in an array; isolation grooves formed in the corresponding ion implantation regions and at least used for isolating second doped semiconductor layers of any two adjacent optoelectronic chip structures from each other; and light blocking structures arranged in the isolation grooves and at least used for preventing light from being transmitted between any two adjacent optoelectronic chip structures by means of the second doped semiconductor layers. The present application can effectively eliminate the problem of optical crosstalk of a micro optoelectronic chip array, so that excellent photoelectric conversion efficiency and display effect are achieved.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements

Abstract

A nano-delivery system of a nucleotide drug, and a preparation method therefor and the use thereof. The nano-delivery system comprises a liposome and a nanocore wrapped therein. The nanocore comprises a nucleotide drug, a polymer containing a phenylboronic acid group, a metal cation, and a lipid for binding to the metal cation. The nano-delivery system realizes the direct delivery of a nucleotide drug, and greatly improves the delivery efficiency compared with the method in the prior art which relies on further phosphorylation in cells after delivery of precursor molecules. The nano-delivery system realizes an entrapment percentage of the nucleotide drug of 87% or more, and a drug loading capacity of 60% or more, which are far higher than those of the solutions in the prior art. The nano-delivery system can realize pH response, can remain stable in the blood both in-vitro and in-vivo, and quickly release the loaded nucleotide drug after entering the cells, thereby greatly improving the intracellular delivery efficiency, and further significantly improving the efficacy of the drug.

IPC Classes  ?

• A61K 9/127 - Synthetic bilayered vehicles, e.g. liposomes or liposomes with cholesterol as the only non-phosphatidyl surfactant
• C08F 26/02 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen
• C08F 8/42 - Introducing metal atoms or metal-containing groups
• A61P 31/12 - Antivirals

Abstract

The present application provides an independent microporous layer for a fuel cell, a preparation method for the independent microporous layer, a membrane electrode, and a fuel cell. The independent microporous layer for the fuel cell comprises carbon nanotubes, a basic carbon material, and a hydrophobic treatment agent, which are mixed with each other; the carbon nanotube provides a support structure for the independent microporous layer, the basic carbon material serves as a matrix of the independent microporous layer and provides a porous structure for the independent microporous layer, and the hydrophobic treatment agent provides hydrophobic support for the independent microporous layer. In the present application, when the micro-structure of the independent microporous layer is used as a component of the membrane electrode, the independent microporous layer can exist independently of the substrate layer and can provide support for a detachable structure of the membrane electrode without needing to be coated onto the substrate layer. Thus, the microporous layer is prevented from permeating into the substrate layer, and the gas transmission performance of the substrate layer is not affected.

IPC Classes  ?

• H01M 8/0234 - Carbonaceous material

Abstract

A method for transferring a carbon nanotubes aqueous phase dispersion into an organic phase dispersion includes: providing the carbon nanotubes aqueous dispersion; mixing the carbon nanotubes aqueous dispersion with a first solvent to obtain a first suspension, where the first solvent includes a hydrophilic organic solvent; mixing the first suspension with a second solvent to form two stratified phases, allow to obtain a second suspension, where the second solvent includes a hydrophobic organic solvent; mixing the second suspension with a third solvent to obtain a third suspension; and subjecting the second suspension or the third suspension to dispersion treatment to obtain a carbon nanotubes organic dispersion, thereby realizing solvent transfer of the carbon nanotubes dispersion from aqueous to organic phase. The method can transfer the carbon nanotubes aqueous dispersion into the organic dispersion, and the transfer efficiency is 70%-95%.

IPC Classes  ?

• C01B 32/174 - DerivatisationSolubilisationDispersion in solvents
• C01B 32/159 - Carbon nanotubes single-walled

Abstract

The present application discloses a post-treatment method for greatly improving the performance of a carbon nanotube film, and an application thereof. The post-treatment method comprises: infiltrating an original carbon nanotube film in chlorosulfonic acid for standing, then placing the carbon nanotube film in air such that chlorosulfonic acid molecules inside the carbon nanotube film can react with water molecules in the air, and then generating sulfuric acid molecules inside the carbon nanotube film so as to promote the water molecules to enter the carbon nanotube film; then placing the carbon nanotube film in the chlorosulfonic acid again so as to chemically react with the water molecules to generate a hydrogen chloride gas, resulting in expansion of the carbon nanotube film; and infiltrating the carbon nanotube film in a chlorosulfonic acid solution again after drafting treatment, and finally carrying out high-temperature vacuum annealing heat treatment. The carbon nanotube film prepared in the present application has a tensile strength at the magnitude of GPa and an electrical conductivity at the level of 106S/m, and has a higher surface flatness, such that the compounding of the carbon nanotube film with other materials is facilitated, and a composite interface having a stronger binding force is constructed, thereby greatly improving the final mechanical and electrical properties of a composite material.

IPC Classes  ?

• C01B 32/168 - After-treatment

Abstract

An electrically-controlled color-changing device achieving reversible switching of all colors, a manufacturing method therefor and the use thereof. The electrically-controlled color-changing device comprises a color-changing layer, an electrolyte and a counter electrode. The color-changing layer comprises a substrate, a conductive layer and an active material layer, the active material layer and the conductive layer forming a physical interference color. The electrolyte is connected to the conductive layer or the active material layer. When an electrochemical reaction takes place between the electrolyte and the surface of the conductive layer or the active material layer, the thickness of the active material layer changes. The electrically-controlled color-changing device can regulate rich colors covering the entire color gamut, and can realize reversible switching of colors at low voltages, and in addition, the electrically-controlled color-changing device enables colors controlled thereby to have memory properties, and thus can maintain colors without additional energy input and is energy-saving and environmentally friendly, and also has the characteristics of high brightness and high saturation, thereby having broad application prospects in fields of energy-saving display, decoration, anti-counterfeiting, batteries, etc.

IPC Classes  ?

• G02F 1/153 - Constructional details

Abstract

A full-color reversible switching device controlled by electrochemistry, and its preparation method and use are provided. The device controlled by electrochemistry includes a color-changing layer, an electrolyte and a counter electrode. The color-changing layer includes a substrate, a conductive layer and an active material layer. The active material layer and the conductive layer form a physical interference color. The electrolyte is connected to the conductive layer or the active material layer. When an electrochemical reaction occurs between the electrolyte and a surface of the conductive layer or the active material layer, the thickness of the active material layer changes. The device controlled by electrochemistry has rich tunable colors that can cover the entire color gamut, and can achieve reversible switching of colors at a small voltage.

IPC Classes  ?

• G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements

Abstract

The present application relates to a polypeptide albumin nanoparticle, a preparation method therefor, and an application thereof. The polypeptide albumin nanoparticle is formed by assembling a cationic amphiphilic polypeptide and an albumin. The hydrophobic part of the cationic amphiphilic polypeptide binds to the albumin, and the positive charges carried by the cationic amphiphilic polypeptide can interact with the negative charges on the surface of the albumin, so that the cationic amphiphilic polypeptide and the albumin are assembled to form the polypeptide albumin nanoparticle. In the polypeptide albumin nanoparticle, the cationic amphiphilic polypeptide and the albumin interact with each other, so that stability is improved, hemolytic toxicity is reduced, a high targeting property is provided, tumor cell oncosis can be induced, and the anti-tumor immune response of the body is induced, thereby achieving the effect of providing a high targeting property and efficiently killing tumor cells.

IPC Classes  ?

• A61K 38/12 - Cyclic peptides
• A61K 9/51 - Nanocapsules
• A61K 47/64 - Drug-peptide, drug-protein or drug-polyamino acid conjugates, i.e. the modifying agent being a peptide, protein or polyamino acid which is covalently bonded or complexed to a therapeutically active agent
• A61K 47/69 - Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additivesTargeting or modifying agents chemically bound to the active ingredient the non-active ingredient being chemically bound to the active ingredient, e.g. polymer-drug conjugates the conjugate being characterised by physical or galenical forms, e.g. emulsion, particle, inclusion complex, stent or kit
• A61P 35/00 - Antineoplastic agents

Abstract

An aerogel fiber preparation method and uses. The preparation method comprises: mixing a solvent with a polymer material to form a spinning solution; on the basis of air-jet spinning technology, driving the spinning solution by a high-speed air jet so as to form a jet flow, and forming gel fibers by means of sol-gel transition; and carrying out solvent replacement and then drying treatment on the gel fibers to obtain aerogel fibers. The preparation method does not have a high requirement for the gel process of aerogel materials. Obtained spinning solutions satisfying rheological conditions can all be used to prepare aerogel fibers by means of the preparation method, avoiding the effect of insufficient gel processes on the fiber properties, improving the production efficiency of the aerogel fibers, and greatly simplifying the production procedures. The prepared aerogel fibers have unique porous structures, high specific surface area, high porosity, certain spinnability and excellent skeleton structure stability, and can be applied to the fields of textiles, etc.

IPC Classes  ?

• D01F 6/60 - Monocomponent man-made filaments or the like of synthetic polymersManufacture thereof from homopolycondensation products from polyamides
• D01F 6/62 - Monocomponent man-made filaments or the like of synthetic polymersManufacture thereof from homopolycondensation products from polyesters
• D01F 6/16 - Monocomponent man-made filaments or the like of synthetic polymersManufacture thereof from homopolymers obtained by reactions only involving carbon-to-carbon unsaturated bonds from polymers of unsaturated carboxylic acids or unsaturated organic esters, e.g. polyacrylic esters, polyvinyl acetate
• D01F 6/14 - Monocomponent man-made filaments or the like of synthetic polymersManufacture thereof from homopolymers obtained by reactions only involving carbon-to-carbon unsaturated bonds from polymers of unsaturated alcohols, e.g. polyvinyl alcohol, or of their acetals or ketals
• D01F 8/02 - Conjugated, i.e. bi- or multicomponent, man-made filaments or the likeManufacture thereof from cellulose, cellulose derivatives, or proteins
• D01F 8/10 - Conjugated, i.e. bi- or multicomponent, man-made filaments or the likeManufacture thereof from synthetic polymers with at least one other macromolecular compound obtained by reactions only involving carbon-to-carbon unsaturated bonds as constituent
• D01F 8/14 - Conjugated, i.e. bi- or multicomponent, man-made filaments or the likeManufacture thereof from synthetic polymers with at least one polyester as constituent
• D01F 8/16 - Conjugated, i.e. bi- or multicomponent, man-made filaments or the likeManufacture thereof from synthetic polymers with at least one other macromolecular compound obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds

Abstract

The present application provides a nickel oxyhydroxide/carbon nanotube complex serving as an aqueous magnesium ion positive electrode material, and a preparation method therefor and a use thereof. In the present application, the nickel oxyhydroxide/carbon nanotube complex is prepared by using a carbon nanotube as a substrate and growing nickel oxyhydroxide particles on the surface of the carbon nanotube by a chemical bath method. By using the technical solution of the present application, the nickel oxyhydroxide particles are synthesized on the surface of the carbon nanotube by the simple chemical bath method, so that the nickel oxyhydroxide particles are deposited on the surface of the carbon nanotube to form a complex having a nickel oxyhydroxide/carbon nanotube structure; additionally, the complex is used as a positive electrode material for an aqueous magnesium ion battery, so that the aqueous magnesium ion battery exhibits excellent electrochemical performance, and particularly has excellent cycling stability and excellent magnesium ion storage capacity.

IPC Classes  ?

• C01G 53/04 - Oxides
• C01B 32/168 - After-treatment
• H01M 4/36 - Selection of substances as active materials, active masses, active liquids
• H01M 4/52 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
• H01M 4/583 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• H01M 10/36 - Accumulators not provided for in groups
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
• B82Y 40/00 - Manufacture or treatment of nanostructures

Abstract

Disclosed in the present invention are a graphene zinc-containing anticorrosive coating, a preparation method therefor, and a use thereof. The graphene zinc-containing anticorrosive coating comprises the following raw materials in parts by weight: 15-50 parts of an interface-modified graphene/zinc powder mixture; 15-40 parts of epoxy resin; 7-15 parts of a curing agent; 10-30 parts of a mixed solvent; and 10-25 parts of an auxiliary agent. Due to the contribution of intermolecular hydrogen bonding and electrostatic interaction, the conductive supramolecular material powder in the present invention has excellent bonding capacity, so that graphene, zinc powder and graphene are firmly bonded, and an insulating substance cannot be formed on contact points; in addition, the composition of alkaline conductive molecules increases the electrical conductivity, facilitating the improvement of a cathode protection effect, thereby effectively solving the technical problem of poor cathode protection effect caused by low bonding strength of a graphene and zinc powder interface in current graphene zinc-containing anticorrosive coatings.

IPC Classes  ?

• C09D 163/02 - Polyglycidyl ethers of bis-phenols
• C09D 5/10 - Anti-corrosive paints containing metal dust
• C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
• C08G 81/00 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers

Abstract

An in-situ hydrophobically modified aramid nano aerogel fiber as well as a preparation method and uses thereof are provided. The preparation method includes: providing an aramid nano spinning solution; preparing a hydrophobically modified aramid nano aerogel fiber by using a spinning technology, wherein the coagulating bath adopted by the spinning technology includes a first organic solvent and a halogenated reagent including a monochloroalkane, a monochloroalkane, a dibromoalkane, a dichloroalkane and a trichloroalkane; and then drying to obtain the in-situ hydrophobically modified aramid nano aerogel fiber. The in-situ hydrophobically modified aramid nano aerogel fiber has a unique three-dimensional porous network structure, low heat conductivity, high porosity, high tensile strength and elongation at break, a certain spinnability and structure stability, and can be applied to the field of textiles. A fabric knitted with the hydrophobic fibers has a self-cleaning ability.

IPC Classes  ?

• D01D 5/00 - Formation of filaments, threads, or the like
• B29C 64/118 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using filamentary material being melted, e.g. fused deposition modelling [FDM]
• B29C 64/30 - Auxiliary operations or equipment
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 40/20 - Post-treatment, e.g. curing, coating or polishing
• B33Y 80/00 - Products made by additive manufacturing
• D01D 5/06 - Wet spinning methods
• D01F 6/60 - Monocomponent man-made filaments or the like of synthetic polymersManufacture thereof from homopolycondensation products from polyamides
• B29K 77/00 - Use of polyamides, e.g. polyesteramides, as moulding material
• B29K 105/00 - Condition, form or state of moulded material
• B29K 105/04 - Condition, form or state of moulded material cellular or porous

Abstract

The present application discloses a hydrogen-sensitive color-changing material and a use thereof. The hydrogen-sensitive color-changing material is a structural color material and comprises at least one substrate layer, at least one color-changing layer and at least one catalytic layer which are stacked; when the hydrogen-sensitive color-changing material is in contact with hydrogen, the catalytic layer can at least convert part of hydrogen into active hydrogen atoms, and at least some of the active hydrogen atoms can react with the at least one color-changing layer, so that the color of the hydrogen-sensitive color-changing material is changed. According to the hydrogen-sensitive color-changing material provided by the present application, a physical structural color is obtained by means of a multi-layer optical interference effect; the hydrogen-sensitive color-changing material has the advantages such as being fadeless, environmentally friendly, and capable of generating rich rainbow effects, and the excellent naked-eye visible color change effect thereof can cause accurate indication of a leakage point at the time of hydrogen leakage; the hydrogen-sensitive color-changing material has a short response time, can generate an excellent color change indication effect, and can be prepared by means of a convenient deposition method, such that short time is consumed, the process is simple, large-area controllable production is easy to realize, and no chemical pollutant is generated.

IPC Classes  ?

• C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups

Abstract

A high-electron-mobility transistor structure as well as a fabricating method and use thereof are provided. The high-electron-mobility transistor structure includes an epitaxial structure as well as a source electrode, a drain electrode and a gate electrode, where the epitaxial structure includes a first semiconductor layer and a second semiconductor layer, a carrier channel is formed between the first semiconductor layer and the second semiconductor layer, and the source electrode is electrically connected with the drain electrode through the carrier channel; a coincidence rate between the orthographic projection of the gate foot of the gate electrode on the first semiconductor layer and the orthographic projection of the second semiconductor layer on the first semiconductor layer is more than 80%.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/66 - Types of semiconductor device

Abstract

A method for transposition of a carbon nanotube water-phase dispersion into an organic-phase dispersion. The method comprises: providing a carbon nanotube water-phase dispersion; mixing the carbon nanotube water-phase dispersion with a first solvent to obtain a first suspension, wherein the first solvent comprises a hydrophilic organic solvent; mixing the first suspension with a second solvent to form two layered phases, so as to obtain a second suspension, wherein the second solvent comprises a hydrophobic organic solvent; mixing the second suspension with a third solvent to obtain a third suspension; and subjecting the second suspension or the third suspension to dispersion treatment to obtain a carbon nanotube organic dispersion, thereby achieving solvent transposition of carbon nanotubes so as to achieve the solvent transposition of the carbon nanotube dispersion from a water phase to an organic phase. The method can achieve the transposition of a carbon nanotube water-phase dispersion into an organic-phase dispersion, and the transposition efficiency is 70-95%.

IPC Classes  ?

• C01B 32/174 - DerivatisationSolubilisationDispersion in solvents

Abstract

The present application relates to a collagen hydrogel, a preparation method therefor, and the use thereof. The preparation method comprises the following steps: (1) by using an amine oxidase, catalyzing collagen to undergo oxidative deamination to generate unsaturated aldehyde functional groups, and performing intramolecular or intermolecular crosslinking, so as to complete primary crosslinking; and (2) subjecting the primary cross-linked product to secondary crosslinking under the catalysis of a carboxyl activator so as to obtain the collagen hydrogel. In the present application, the collagen hydrogel prepared by the method is a pure collagen hydrogel, and has a high curing speed, good biocompatibility (excellent bionic properties), adjustable mechanical strength, adjustable structural size, good stability, and a wide range of application.

IPC Classes  ?

• C08J 3/24 - Crosslinking, e.g. vulcanising, of macromolecules
• C08L 89/00 - Compositions of proteinsCompositions of derivatives thereof
• C08J 3/075 - Macromolecular gels

Abstract

A recyclable nano composite, a preparation method, and an application thereof are provided. The preparation method includes providing a reinforcement material including a conductive material, or, a combination of the conductive material and an insulating material; directly mixing the reinforcement material with a matrix material, or, molding the reinforcement material to form a film, fiber or three-dimensional network structure formed by the reinforcement material, and then compounding the film, fiber or three-dimensional network structure with the matrix material to obtain the recyclable nano composite. The present disclosure further discloses a recycling method of a reinforcement material. The recyclable nano composite provided by the present disclosure has high strength, high toughness, conductivity, electromagnetic shielding and other properties; furthermore, by simple treatment, the reinforcement material can be recycled.

IPC Classes  ?

• C08K 3/04 - Carbon
• C08K 3/08 - Metals
• C08K 3/22 - OxidesHydroxides of metals
• C08K 3/38 - Boron-containing compounds
• C08K 7/06 - Elements
• C08K 9/00 - Use of pretreated ingredients

Abstract

An interconnected electrode structure, a method of manufacturing same, and a use of same are provided. The interconnected electrode structure includes an insulating base material, a through hole, a first conductive body, and a second conductive body. The insulating base material includes a first surface and a second surface which face away from each other. The through hole penetrates through the insulating base material in a thickness direction. The first conductive body is formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface. The second conductive body is formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and the second conductive body is electrically combined with the first conductive body to form a conductive channel in the insulating base material.

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

Disclosed is a manufacturing method for a field emission device, comprising: forming a primary epitaxial layer on a substrate; forming a plurality of secondary epitaxial structures on the primary epitaxial layer; on the primary epitaxial layer, forming an emitter electrode layer and a dielectric layer located between the emitter electrode layer and the plurality of secondary epitaxial structures; on the dielectric layer and the plurality of secondary epitaxial structures, sequentially forming a protective layer, an insulating layer, a gate electrode layer, and a planarization layer that are stacked; etching the planarization layer to expose part of the gate electrode layer on the dielectric layer and some of the secondary epitaxial structures; etching to remove the protective layer, the insulating layer, and the exposed part of the gate electrode layer on some of the secondary epitaxial structures to expose some of the secondary epitaxial structures; forming a gate connection electrode layer on the exposed gate electrode layer on the dielectric layer; and forming an anode opposite to the exposed secondary epitaxial structures, wherein a predetermined distance is formed between the anode and the exposed secondary epitaxial structures. Further disclosed is a field emission device.

IPC Classes  ?

• H01J 9/02 - Manufacture of electrodes or electrode systems

Abstract

Disclosed in the present application are a high-power bidirectional driving biomimetic muscle fiber, and a preparation method therefor and application thereof. The biomimetic muscle fiber comprises a matrix fiber and a guest material layer, which covers the matrix fiber, wherein the matrix fiber can be electrified to generate heat, and the guest material layer comprises a liquid crystal elastomer; and the biomimetic muscle fibers are excessively twisted to form a spiral cylindrical structure. The biomimetic muscle fiber provided in the present application improves the mechanical properties of the liquid crystal elastomer, and has a large capacity to do work and a large driving capacity; can achieve a quick response and control the driving performance by means of changing a voltage, and can operate at a high frequency; and can be restored without load, has bidirectional driving characteristics, and has cycle work greater than zero. In the preparation method provided in the present application, it is not necessary to use a large number of liquid crystal elastomers, thereby saving on costs, and a preparation process is low in complexity and is carried out without requiring harsh conditions, which solves the problems that liquid crystal elastomer fibers are prepared by means of a complex process and are difficult to continuously prepare, thereby facilitating development and application.

IPC Classes  ?

• D06M 15/63 - Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing sulfur in the main chain, e.g. polysulfones
• C08G 75/045 - Polythioethers from mercapto compounds or metallic derivatives thereof from mercapto compounds and unsaturated compounds
• D02G 3/04 - Blended or other yarns or threads containing components made from different materials
• D02G 3/12 - Threads containing metallic filaments or strips
• D02G 3/32 - Elastic yarns or threads
• D02G 3/44 - Yarns or threads characterised by the purpose for which they are designed
• D06M 101/40 - Fibres of carbon
• D06M 101/30 - Synthetic polymers consisting of macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
• D06M 101/34 - Polyamides

Abstract

The present application discloses a GaN-based HEMT having multiple threshold voltages, and a preparation method therefor and an application thereof. The HEMT structure comprises a channel layer and a barrier layer, wherein a two-dimensional electron gas is formed between the channel layer and the barrier layer. The barrier layer at least has a first source region, a second source region, a first gate region, a second gate region, a first drain region and a second drain region, wherein the first source region, the first gate region and the first drain region cooperate with each other, and are configured to form a first HEMT unit; the second source region, the second gate region and the second drain region cooperate with each other, and are configured to form a second HEMT unit; and the thickness of the barrier layer in the first gate region is less than the thickness thereof in the second gate region, such that the threshold voltage of the first HEMT unit is higher than the threshold voltage of the second HEMT unit. The present application can realize wafer-level preparation of an HEMT device having a high-threshold voltage and a low-threshold voltage, and the prepared HEMT having multiple threshold voltages is highly integrated, and has high carrier mobility and good threshold voltage uniformity, such that the requirement of application of the HEMT in a high- and low-threshold-type logic circuit can be sufficiently satisfied.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

Disclosed in the present application is a GaN-based High Electron Mobility Transistor (HEMT) having a multi-threshold voltage, and a preparation method an application therefor. The HEMT structure includes a channel layer and a barrier layer; a Two-dimensional Electron Gas (2DEG) is formed between the channel layer and the barrier layer; the barrier layer is at least provided with a first source area, a second source area, a first gate area, a second gate area, a first drain area, and a second drain area; the first source area, the first gate area, and the first drain area cooperate with each other, so as to form a first HEMT unit; the second source area, the second gate area, and the second drain area cooperate with each other, so as to form a second HEMT unit. that the HEMT may well meet application requirements of high and low threshold logic circuits.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

There is provided mechanisms for handling credentials of an IoT SAFE applet. A method is performed by a communication device. The communication device stores the IoT SAFE applet in a first security domain of a subscription module in the communication device. The first security domain is free from any subscription profile and is different from any security domain of the subscription module for storing subscription profiles. The IoT SAFE applet is independent from any MNO. The communication device is without credentials for the IoT SAFE applet for establishing secure communication for the communication device with a network node. The method comprises obtaining credentials for the IoT SAFE applet from the network node. The method comprises storing the credentials in the first security domain of the subscription module. The credentials are, after successful storage, accessible only from within the first security domain. The method comprises establishing, using the IoT SAFE applet and at least one of the credentials, secure communication for the communication device with the network node.

IPC Classes  ?

• H04W 12/40 - Security arrangements using identity modules
• H04W 12/0431 - Key distribution or pre-distributionKey agreement
• H04W 12/069 - Authentication using certificates or pre-shared keys
• H04W 12/086 - Access security using security domains
• H04W 12/37 - Managing security policies for mobile devices or for controlling mobile applications

Abstract

The present application discloses a bionic neuromuscular fiber, and a preparation method therefor and an application thereof. The bionic neuromuscular fiber comprises a carbon nanotube fiber core, an intermediate layer, a substrate layer, and a sensing layer that are coaxially and successively sleeved from inside to outside, and the bionic neuromuscular fiber is twisted into a helical shape; both the intermediate layer and the substrate layer are made of a high polymer material, and the thermal expansion coefficient of the intermediate layer is greater than the thermal expansion coefficient of the substrate layer; and the sensing layer comprises a carbon-based conductive material that at least contains MXene. According to the bionic neuromuscular fiber, and the preparation method therefor and the application thereof provided in the present application, both the sensing layer and the intermediate layer are multi-functional, the sensing layer serves as both a capacitive electrode and a resistive sensing element, and the intermediate layer serves as both a thermal driving element and a dielectric layer. Therefore, the present application achieves the integration of three functions of proximity sensing, electrothermal driving, and motion feedback with low structural complexity, and provides a broad space for the development of flexible robots.

IPC Classes  ?

• D06M 15/643 - Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicon in the main chain
• D06M 15/31 - Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds of unsaturated nitriles
• D06M 11/74 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with carbon or compounds thereof with carbon or graphiteTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with carbon or compounds thereof with carbidesTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with carbon or compounds thereof with graphitic acids or their salts
• D01D 5/00 - Formation of filaments, threads, or the like
• D06M 101/40 - Fibres of carbon

Abstract

A multicolor electrochromic structure comprises a working electrode, an electrolyte and an auxiliary electrode. The electrolyte is distributed between the working electrode and the auxiliary electrode. The working electrode comprises an electrochromic layer which comprises a first reflective surface and a second reflective surface arranged face to face in parallel. A dielectric layer is arranged between the first and the second reflective surface. The first and the second reflective surfaces and the dielectric layer form an optical cavity. The dielectric layer is fabricated by an electrochromic material. The multicolor electrochromic structure can combine a structural color with electrochromism to display various color changes; it features a simple structure, low costs and a wide application prospect, and it is easy to be fabricated. Also provided are a fabrication method and a regulation method of the multicolor electrochromic structure, and an electrochromic device, an image display, comprising the multicolor electrochromic structure.

IPC Classes  ?

• G02F 1/157 - Structural association of cells with optical devices, e.g. reflectors or illuminating devices
• G02F 1/1523 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material

Abstract

The present application discloses a multi-metal compounding method for a polymeric fiber material and a multi-metal composite fiber. The method comprises: etching a polymeric fiber in an etching solution containing an oxidizing acid and a hydrophilic agent to obtain a micro-etched fiber; performing surface activation treatment on the micro-etched fiber to obtain an activated fiber; and depositing a multi-metal composite layer on the surface of the activated fiber, the multi-metal composite layer at least comprising an electroless nickel plated bottom layer applied on the surface of the activated fiber and at least one electroplated copper layer. According to the multi-metal compounding method for a polymeric fiber material provided by the present application, the oxidizing acid and the hydrophilic agent are used in combination, so that the phenomena of cracking, ineffective etching, and fiber agglomeration of the polymeric fiber are avoided, and the bonding force, uniformity, and mechanical property of the multi-metal composite layer and the polymeric fiber are improved.

IPC Classes  ?

• D06M 11/83 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with metalsTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with metal-generating compounds, e.g. metal carbonylsReduction of metal compounds on textiles
• D06M 11/55 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with sulfur, selenium, tellurium, polonium or compounds thereof with sulfur trioxideTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with sulfur, selenium, tellurium, polonium or compounds thereof with sulfuric acid or thiosulfuric acid or their salts
• C23C 18/32 - Coating with one of iron, cobalt or nickelCoating with mixtures of phosphorus or boron with one of these metals
• C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
• C25D 3/38 - ElectroplatingBaths therefor from solutions of copper
• C25D 5/54 - Electroplating of non-metallic surfaces

Abstract

A flexible photoelectric device module and a method for preparing same are provided. The module includes a plurality of photoelectric device units. One photoelectric device unit includes a bottom electrode, a functional layer and a top electrode. The bottom electrode includes a light-transmittance insulating base, and a first electrode, a second electrode and a third electrode which are arranged on two side surfaces of the base. The first electrode is a transparent electrode. The second electrode and the first electrode are in electric contact with each other. The second electrode and the third electrode are electrically connected through a conducting channel. The conducting channel runs through the base along a thickness direction. The third electrode in one photoelectric device unit is electrically connected to the top electrode or the first electrode in another photoelectric device unit, so that the two photoelectric device units are disposed in series or in parallel.

IPC Classes  ?

• H10K 30/82 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• H10K 77/10 - Substrates, e.g. flexible substrates

Abstract

The present invention discloses a manufacturing method of a solar cell, including: forming an electricity generation layer on a substrate; forming an ohmic contact layer on a surface of the electricity generation layer facing away from the substrate; forming a back electrode on a surface of the substrate facing away from the electricity generation layer; and forming a top electrode on a surface of the ohmic contact layer facing away from the electricity generation layer using a printing process. The present invention discloses a solar cell. The present invention solves the problem of low capacity of the solar cell at present.

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/0216 - Coatings
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present application discloses a method for improving interfacial adhesion of an organic solar cell, and an organic solar cell. An elastomer interface layer is arranged between at least two adjacent functional layers in the organic solar cell, the elastomer interface layer is formed by a thermoplastic elastomer, or enrichment layers formed by enrichment of a thermoplastic elastomer are arranged at the upper and lower interfaces of at least one functional layer. The method comprises: providing an elastomer interface layer between at least two adjacent functional layers, or enriching a thermoplastic elastomer at the upper and lower interfaces of at least one functional layer to form enrichment layers. According to the present application, a thermoplastic elastomer is enriched at interfaces or a thermoplastic elastomer is independently used as an interface layer, so as to serve as an adhesive between functional layers. The process is simple, the doping window is large, and the thickness dependence is small during independent film forming; the prepared organic solar cell is high in photoelectric conversion efficiency, the adhesion between an active layer and a hole transport layer or an electron transport layer is high, and the mechanical stability of the cell is good.

IPC Classes  ?

• H10K 30/80 - Constructional details

Abstract

Disclosed in the present application are an aluminum ion battery and an application thereof. The aluminum ion battery comprises: a positive electrode, which comprises a conductive fiber having a helical structure, wherein the conductive fiber having the helical structure can be elastically stretched in the length direction; a negative electrode, which comprises a metal electrode containing aluminum; and an electrolyte, which comprises an electrolyte containing aluminum ions or ions of aluminum elements. The positive electrode and the negative electrode are in contact with the electrolyte, wherein the electrode comprising the conductive fiber has an elongation at break of 103% and can be cyclically stretched within a strain range of 50%. The stretchable fiber electrode provided in the embodiments of the present application has a good tensile property, and the range of elastic deformation completely meets the degree of deformation which is experienced by a wearable device.

IPC Classes  ?

• H01M 4/02 - Electrodes composed of, or comprising, active material
• H01M 10/36 - Accumulators not provided for in groups

Abstract

An external optical injection locking laser, comprising a main laser (1), an input/output waveguide (3), and a slave laser (2) formed on a same substrate (9). The main laser (1) is configured to emit laser light into the input/output waveguide (3); the input/output waveguide (3) is configured to inject the laser light emitted by the main laser (1) into the slave laser (2) in a directional coupling manner, and to output laser light emitted by the main laser (1) and the slave laser (2); the slave laser (2) comprises a waveguide resonant cavity; the slave laser (2) is configured to emit laser light after cohering laser light generated thereby and the laser light injected by the main laser (1), and the laser light emitted by the slave laser (2) is locked by the main laser (1).

IPC Classes  ?

• H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
• G02B 6/26 - Optical coupling means

Abstract

An electrochemical artificial muscle system and an electrochemical artificial muscle testing device. The electrochemical artificial muscle system comprises a working electrode including conductive fibers having a spiral structure; a counter electrode containing selected metal elements; and an electrolyte comprising an ionic liquid containing selected ions, the selected ions comprising the selected metal elements. The working electrode and the counter electrode are both in contact with the electrolyte. An artificial muscle system based on an aluminum ion battery system exhibits a contraction retention characteristic, that is, artificial muscle fibers contract when a voltage is applied, and after the voltage is removed, the contraction state of the artificial muscle fibers can still be maintained almost without attenuation within 450 s. At the same time, the artificial muscle fiber has good energy storage performance, and the capacity is 20-100 mAh g-1, so that the energy injected into the artificial muscle in a driving process is stored, and large energy loss is avoided.

IPC Classes  ?

• G01N 27/26 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variablesInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by using electrolysis or electrophoresis
• G01N 27/30 - Electrodes, e.g. test electrodesHalf-cells
• G01B 21/02 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
• A61F 2/08 - MusclesTendonsLigaments
• A61L 27/08 - Carbon
• B25J 9/00 - Programme-controlled manipulators

Abstract

Disclosed are an apparatus and a method for preparing an oriented carbon nanotube fiber through electrochemical drafting. The method comprises: constructing an electrochemical reaction system with an original carbon nanotube fiber used as a working electrode, a counter electrode, a reference electrode, and an electrolyte solution; conducting electrochemical drafting by means of applying a selected drafting stress to the original carbon nanotube fiber while powering on the electrochemical reaction system, so as to intercalate an electrolyte ion into the original carbon nanotube fiber and orient the carbon nanotube under the action of the drafting stress in an expanded state; and powering off the electrochemical reaction system while maintaining the selected drafting stress to extract the electrolyte ion, so as to obtain a highly oriented carbon nanotube fiber. The fiber prepared by the method features a controllable degree of orientation, ease of operation, and a required time of less than one minute and down to 10 s.

IPC Classes  ?

• C01B 32/16 - Preparation
• B25J 9/00 - Programme-controlled manipulators

Abstract

A group III nitride transistor structure capable of reducing a leakage current and a fabricating method thereof are provided. The group III nitride transistor structure includes: a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material and/or insertion layer; a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein a third semiconductor is arranged between the first gate and the first heterojunction, and the first gate is also electrically connected with the first electrode; a source, a drain and a second gate which are matched with the second heterojunction, wherein the source and the drain are also respectively electrically connected with the first gate and the second electrode, and a sixth semiconductor is arranged between the second gate and the second heterojunction.

IPC Classes  ?

• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/66 - Types of semiconductor device
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
• H01L 29/872 - Schottky diodes

Abstract

A narrow linewidth laser includes a passive ring resonant cavity, an FP resonant cavity, and a first gain region. The passive ring resonant cavity and the FP resonant cavity are combined to form an M-Z (Mach-Zehnder interference structure) compound external cavity structure, and the M-Z compound external cavity structure is at least used for providing wavelength selection and narrowing laser linewidth. The first gain region is provided on the outer side of the M-Z compound external cavity structure and is used for providing a gain for the whole laser. The narrow linewidth laser is simple in structure, high in side-mode suppression ratio, narrow in linewidth, and high in output power. By further integrating a PN junction region or MOS junction region, broadband and rapid tuning with low power consumption can also be achieved, and tuning management is simple.

IPC Classes  ?

• H01S 5/0625 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
• G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
• H01S 5/14 - External cavity lasers
• H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
• H01S 5/125 - Distributed Bragg reflector [DBR] lasers

Abstract

The preparation method for fluorescent quantum dots includes: carrying out solvothermal reaction on a first evenly mixed reaction system containing a silver source, a negative ion source and a weakly polar solvent to prepare a silver-based quantum dots precursor; and carrying out ion exchange reaction on a second evenly mixed reaction system containing the silver-based quantum dots precursor, a negative ion source and/or a metal positive ion source to obtain alloyed fluorescent quantum dots with a fluorescence emission peak wavelength of 500-1700 nm and an absolute quantum efficiency of more than 85%. The silver-based quantum dots are prepared through a simple high-temperature solvothermal method and then the alloyed quantum dots are obtained by the ion exchange method, and therefore the synthesis process is simple and controllable. The obtained fluorescent quantum dots can be prepared on large scale, and have adjustable fluorescence emission from visible to near-infrared region and excellent photostability.

IPC Classes  ?

• H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
• C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
• C09K 11/58 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing copper, silver or gold
• B82Y 40/00 - Manufacture or treatment of nanostructures

Abstract

A gallium nitride nano-superstructure (B), preparation methods therefor, and a gallium nitride-based laser provided with the gallium nitride nano-superstructure (B), the gallium nitride nano-superstructure (B) being used for realizing emission of circularly polarized light from the gallium nitride-based laser. The gallium nitride nano-superstructure (B) comprises, sequentially from bottom to top, a substrate (10), a dielectric film layer (20) and a nanograting structure layer (30), a grating material of the nanograting structure layer (30) comprising one of gallium nitride, n-type gallium nitride and p-type gallium nitride, the grating period range being 100 nm - 280 nm, the grating height range being 100 nm - 300 nm, and the grating line width being 50 nm - 200 nm. The gallium nitride nano-superstructure (B) can realize an efficient emission function of circularly polarized light, and when applied to a gallium nitride-based laser, can realize emission of circularly polarized light from the gallium nitride-based laser.

IPC Classes  ?

• H01S 5/00 - Semiconductor lasers
• G02B 5/30 - Polarising elements

Abstract

An in-situ hydrophobically modified aramid nano aerogel fiber as well as a preparation method and uses thereof are provided. The preparation method includes: providing an aramid nano spinning solution; preparing a hydrophobically modified aramid nano aerogel fiber by using a spinning technology, wherein the coagulating bath adopted by the spinning technology includes a first organic solvent and a halogenated reagent including a monochloroalkane, a monochloroalkane, a dibromoalkane, a dichloroalkane and a trichloroalkane; and then drying to obtain the in-situ hydrophobically modified aramid nano aerogel fiber. The in-situ hydrophobically modified aramid nano aerogel fiber has a unique three-dimensional porous network structure, low heat conductivity, high porosity, high tensile strength and elongation at break, a certain spinnability and structure stability, and can be applied to the field of textiles. A fabric knitted with the hydrophobic fibers has a self-cleaning ability.

IPC Classes  ?

• D01D 5/00 - Formation of filaments, threads, or the like
• D01D 5/06 - Wet spinning methods
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• B29C 64/118 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using filamentary material being melted, e.g. fused deposition modelling [FDM]
• B29C 64/30 - Auxiliary operations or equipment
• B33Y 40/20 - Post-treatment, e.g. curing, coating or polishing
• D01F 6/60 - Monocomponent man-made filaments or the like of synthetic polymersManufacture thereof from homopolycondensation products from polyamides
• B29K 77/00 - Use of polyamides, e.g. polyesteramides, as moulding material
• B29K 105/00 - Condition, form or state of moulded material
• B29K 105/04 - Condition, form or state of moulded material cellular or porous

Abstract

2323233 material layer; and introducing gallium vapours into the region to be etched to perform etching on the region to be etched. The patterning method completely avoids damage caused by plasma bombardment, and protects a lattice structure from being damaged, thereby effectively reducing the interface state density.

IPC Classes  ?

• H01L 21/467 - Chemical or electrical treatment, e.g. electrolytic etching using masks

Abstract

Disclosed in the present application are a III-group nitride transistor structure capable of reducing current leakage, and a manufacturing method therefor. The III-group nitride transistor structure comprises: a first heterojunction and a second heterojunction, which are arranged in a stacked manner, wherein the first heterojunction and the second heterojunction are electrically isolated by means of a high-resistivity material and/or an insertion layer; a first electrode, a second electrode and a first gate electrode, which match the first heterojunction, wherein a third semiconductor is disposed between the first gate electrode and the first heterojunction, and the first gate electrode is also electrically connected to the first electrode; and a source electrode, a drain electrode and a second gate electrode, which match the second heterojunction, wherein the source electrode and the drain electrode are also respectively electrically connected to the first gate electrode and the second electrode, and a sixth semiconductor is disposed between the second gate electrode and the second heterojunction. The III-group nitride transistor structure provided in the present application can effectively reduce a reverse connection voltage of a device, such that the area of the device is reduced.

IPC Classes  ?

• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology

Abstract

A screening method is provided. Cells secreting target antibodies are screened by mixing candidate cells labeled with a first fluorescent molecule, a capture antigen and a labeled antibody against a target antibody and incubating, labeling using a high content cell imager and sorting using flow cytometry so as to screen cells secreting target antibodies. The screening method disclosed in the present application can automatically complete the labeling and sorting of target candidate cells in high throughput by labeling with a fluorescent molecule in combination with high-content cell imager and flow cytometer, so as to provide sufficient quantity of cells for subsequent amplification to obtain their antibody sequences and screen affinity antibodies. This method greatly improves the screening efficiency.

IPC Classes  ?

• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids
• G01N 15/14 - Optical investigation techniques, e.g. flow cytometry
• G01N 33/58 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving labelled substances
• G01N 33/569 - ImmunoassayBiospecific binding assayMaterials therefor for microorganisms, e.g. protozoa, bacteria, viruses

Abstract

GsGs can be eliminated on the basis of achieving speed saturation and reducing a knee-point voltage of the device.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 21/335 - Field-effect transistors

Abstract

A sweat sensor, includes a sweat-guiding electrode layer including an insulating layer, a conductive electrode provided in the insulating layer, and a first through hole, wherein the first through hole goes through the insulating layer and the conductive electrode; an adhesive layer provided on the insulating layer, wherein the adhesive layer is provided with a second through hole communicated with the first through hole; and a water-absorbing diffusion layer provided on the adhesive layer, wherein the water-absorbing diffusion layer covers the second through hole. A sweat sensing system is further provided with a plurality of sweat sensors. The sweat sensor simultaneously and continuously detects a sweat volume and an electrolyte concentration in real time, and prevents the mixture of old and new sweat from interfering with the detection of the electrolyte concentration.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value

Abstract

A polyaspartic polyurea resin (binder) system having a marine antifouling function and a coating composition. The polyaspartic polyurea resin system comprises a polymer having a structure as shown in the following formula (I); in the formula, X is derived from a polyaspartic polyurea resin, Y is derived from an isocyanate curing agent, and R is a group having antibacterial and antifouling functions. The polyaspartic polyurea resin system has characteristics such as high mechanical strength, low surface energy, and excellent antibacterial properties; a coating formed by the polyaspartic polyurea resin system has advantages such as good antifouling effect, wear resistance, impact resistance, corrosion resistance, good wettability to a base material, and high adhesive force; and the system can be applied to marine ships, maritime work platforms, submarine cables, nuclear power plant water delivery pipelines, and the like on a large scale, and has extremely high practical application value.

IPC Classes  ?

• C08G 18/64 - Macromolecular compounds not provided for by groups
• C08G 18/61 - Polysiloxanes
• C09D 5/14 - Paints containing biocides, e.g. fungicides, insecticides or pesticides
• C09D 175/02 - Polyureas
• C09D 5/16 - Anti-fouling paintsUnderwater paints
• C09D 5/08 - Anti-corrosive paints
• C08G 18/48 - Polyethers

Abstract

Disclosed in the present application are a recoverable nano-composite material, and a preparation method therefor and the use thereof. The preparation method comprises: providing a reinforcement material which comprises a conductive material or a combination of the conductive material and an insulating material; and directly mixing the reinforcement material with a base material, or firstly subjecting the reinforcement material to a forming treatment to form a film, fiber or three-dimensional network structure composed of the reinforcement material and then compounding same with the base material, thereby obtaining the recoverable nano-composite material. Also disclosed in the present application is a method for recovering the reinforcement material. The recoverable nano-composite material provided in the present application has the properties of high strength, high toughness, conductivity, electromagnetic shielding, etc.; moreover, the reinforcement material therein can be recovered by means of a simple treatment in the present application, the method brings no damage to the structure of the reinforcement material, the reinforcement material still keeps a relatively high mechanical performance after being recovered, and the performance of the composite material after repeated use is equivalent to that of the original composite material.

IPC Classes  ?

• C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
• C08L 63/10 - Epoxy resins modified by unsaturated compounds
• C08L 61/16 - Condensation polymers of aldehydes or ketones with phenols only of ketones with phenols
• C08L 75/04 - Polyurethanes
• C08L 79/04 - Polycondensates having nitrogen-containing heterocyclic rings in the main chainPolyhydrazidesPolyamide acids or similar polyimide precursors
• C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
• C08L 81/06 - PolysulfonesPolyethersulfones

Abstract

An aramid nano-aerogel fiber hydrophobically modified in situ, and a preparation method therefor and the use thereof. The preparation method comprises: providing an aramid nanometer spinning solution; preparing a hydrophobically modified aramid nanogel fiber by means of a spinning technology, wherein a coagulating bath used in the spinning technology comprises a first organic solvent and a halogenation reagent, and the halogenation reagent comprises monobromoalkane, monochloroalkane, dibromoalkane, dichloroalkane, trichloroalkane, etc.; and then carrying out a drying treatment to obtain the aramid nano-aerogel fiber hydrophobically modified in situ. Prepared according to the solution, the aramid nano-aerogel fiber hydrophobically modified in situ has a unique three-dimensional porous network structure, a lower heat conductivity, a higher porosity, a higher tensile strength, a higher elongation at break and certain spinnability and structural stability, and can be applied to the field of textiles. A fabric woven from the hydrophobic fiber has a self-cleaning ability. A hydrophobic aramid nano-aerogel fiber flocculus can also be fabricated, and exhibits a good hydrophobic performance.

IPC Classes  ?

• D06M 13/08 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials with non-macromolecular organic compoundsSuch treatment combined with mechanical treatment with halogenated hydrocarbons
• D06M 13/144 - AlcoholsMetal alcoholates
• D06M 11/46 - Oxides or hydroxides of elements of Groups 4 or 14 of the Periodic TableTitanatesZirconatesStannatesPlumbates
• D06M 10/00 - Physical treatment of fibres, threads, yarns, fabrics or fibrous goods made from such materials, e.g. ultrasonic, corona discharge, irradiation, electric currents or magnetic fieldsPhysical treatment combined with treatment with chemical compounds or elements
• D06M 23/00 - Treatment of fibres, threads, yarns, fabrics or fibrous goods made from such materials, characterised by the process

Abstract

nN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials. In addition, a total thickness of the buffer layer and the sacrificial layer required by the epitaxial structure can be small, and there is no need for additional catalyst during an epitaxial growth process, which is beneficial for reducing epitaxial costs and process difficulty. The present invention is practical in use, and can provide technical support for invisible semiconductor devices and super-flexible devices.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/66 - Types of semiconductor device

Abstract

A measurement method of subcell photocurrents and a matching degree of the subcell photocurrents of a multi-junction photovoltaic cell is provided. The measurement method includes measuring an I-V characteristic of the multi-junction photovoltaic cell; and measuring currents corresponding to respective current steps in an I-V curve to obtain approximate values of short-circuit currents of subcells in the multi-junction photovoltaic cell, and then calculating a mismatching degree of the multi-junction photovoltaic cell using step currents. According to the measurement method, a current mismatching degree of the multi-junction photovoltaic cell is obtained by calculating the mismatching degree of the step currents occurring in the I-V curve. The measurement method is rapid and simple, the measurement method avoids complicated and time-consuming processes where the subcell photocurrents are calculated based on a standard light source spectrum integral with bias lights applied.

IPC Classes  ?

• H02S 50/10 - Testing of PV devices, e.g. of PV modules or single PV cells
• H01L 31/0687 - Multiple junction or tandem solar cells

Abstract

Disclosed are fluorescent quantum dots and a preparation method therefor and the use thereof. The preparation method comprises: performing a solvothermal reaction on a first homogeneous mixed reaction system containing a silver source, an anion source and a weakly polar solvent to prepare a silver-based quantum dots precursor; performing an ion exchange reaction on a second homogeneous mixed reaction system containing a silver-based quantum dots precursor, an anion source and/or a metal cation source to obtain alloyed fluorescent quantum dots, wherein the fluorescent emission peak wavelength thereof is located at 500-1700 nm, and the absolute quantum efficiency is greater than 85%. In the present application, silver-based quantum dots are prepared by a simple high-temperature solvothermal method, and then alloyed quantum dots are obtained by an ion exchange method. The synthesis process is simple and controllable, the yield is high, and a large-scale preparation is possible. Moreover, fluorescence emission can be adjusted from visible light to near-infrared and has excellent light stability. At the same time, the quantum dots do not contain any toxic heavy metal elements and have wide application prospects in fields such as biological imaging and near-infrared devices.

IPC Classes  ?

• C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
• C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements

Abstract

A sweat sensor and a sweat sensor system. The sensor comprises: a sweat guiding electrode layer (2) comprising an insulating layer (21), a conductive electrode arranged in the insulating layer (21), and a first through hole penetrating the insulating layer (21) and the conductive electrode; an adhesive layer (3) arranged on the insulating layer (21) and provided with a second through hole which is in communication with the first through hole; and a water absorption diffusion layer (4) arranged on the adhesive layer (3) and covering the second through hole. The sweat sensor system has a plurality of sweat sensors. The sweat sensor can continuously and simultaneously measure the sweat amount and the electrolyte concentration in real time, and can avoid the interference caused by the mixing of new sweat and old sweat on electrolyte concentration measurement.

IPC Classes  ?

• G01N 27/06 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a liquid
• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons

Abstract

Disclosed are a flexible photoelectric component assembly and a manufacturing method therefor. The assembly comprises multiple photoelectric component units, where one photoelectric component unit comprises a bottom electrode, a functional layer, and a top electrode. The bottom electrode comprises a light-transmitting insulating substrate, first, second, and third electrodes provided on two lateral surfaces of the substrate. The first electrode is a transparent electrode. The second electrode electrically contacts the first electrode. The second electrode is electrically connected to the third electrode via an electrically-conductive channel. The electrically-conductive channel runs through the substrate in the widthwise direction. The third electrode in one photoelectric component unit is electrically connected to the top electrode or the first electrode in another photoelectric component unit, thus allowing the two photoelectric component units to be provided as connected in series or connected in parallel. The present application greatly simplifies the manufacturing process for the large-area flexible photoelectric component assembly, reduces costs, increases the utilization rate of the effective area of the assembly and ensures the photoelectric conversion efficiency thereof, and, for example, implements the manufacturing of high-efficiency and large-area assembled solar cells.

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

Disclosed in the present application is an electrode interlink structure, a manufacturing method therefor, and an application thereof. The electrode interlink structure comprises an insulating substrate, a through hole, a first conductor, and a second conductor. The insulating substrate has a first face and a second face which are opposite each other, the through hole passes through the insulating substrate along a thickness direction, the first conductor is formed via a conductive paste entering into the through hole from an opening of the through hole on the first face, the second conductor is formed via a second conductive material entering into the through hole from an opening of the through hole on the second face, and the second conductor is electrically joined with the first conductor, thereby forming a conductive channel within the insulating substrate. The electrode interlink structure provided in the present application has a simple structure, good conductivity, and high yield, and a manufacturing process is simple and low-cost.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
• H01L 23/528 - Layout of the interconnection structure
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present application relates to a polypeptide albumin nanoparticle, a preparation method therefor, and an application thereof. The polypeptide albumin nanoparticle is formed by assembling a cationic amphiphilic polypeptide and an albumin. The hydrophobic part of the cationic amphiphilic polypeptide binds to the albumin, and the positive charges carried by the cationic amphiphilic polypeptide can interact with the negative charges on the surface of the albumin, so that the cationic amphiphilic polypeptide and the albumin are assembled to form the polypeptide albumin nanoparticle. In the polypeptide albumin nanoparticle, the cationic amphiphilic polypeptide and the albumin interact with each other, so that stability is improved, hemolytic toxicity is reduced, a high targeting property is provided, tumor cell oncosis can be induced, and the anti-tumor immune response of the body is induced, thereby achieving the effect of providing a high targeting property and efficiently killing tumor cells.

IPC Classes  ?

• A61K 47/42 - ProteinsPolypeptidesDegradation products thereofDerivatives thereof, e.g. albumin, gelatin or zein
• A61K 9/51 - Nanocapsules
• A61P 35/00 - Antineoplastic agents
• B82Y 40/00 - Manufacture or treatment of nanostructures

Abstract

A narrow linewidth laser, comprising a passive ring resonant cavity, an FP resonant cavity, and a first gain region SOA1. The passive ring resonant cavity and the FP resonant cavity cooperate to form an M-Z composite external cavity structure, the M-Z composite external cavity structure is used for providing a wavelength selection and narrowing a laser linewidth. The first gain region SOA1 is disposed on an outer side of the M-Z composite external cavity structure and is used for providing a gain for the entire laser. The narrow linewidth laser has a simple structure, a high side mode rejection ratio, a narrow line width, and high output power; and by further integrating a PN junction region or a MOS junction region, wide-spectrum, low-consumption, and fast tuning can be implemented, and tuning management is simple. For example, for monolithic integration, butt coupling loss of the gain region and a waveguide region and a narrow linewidth limitation caused thereby can be further avoided; meanwhile, by means of integral semiconductor forming process fabrication, the device has low costs, higher stability and reliability, and better tolerance of harsh environments.

IPC Classes  ?

• H01S 5/14 - External cavity lasers
• H01S 5/125 - Distributed Bragg reflector [DBR] lasers
• H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Abstract

Disclosed in the present application is a screening method, which relates to the field of biotechnology. The screening method of the present application comprises mixing and incubating candidate cells labeled with a first fluorescent molecule, a capture antigen and an anti-target antibody labeled antibody, and screening a cell secreting the target antibody by using a high content cell imager to label same and a flow cytometer to sort same. The screening method disclosed in the present application can be used to automatically complete labeling and sorting of a target candidate cell at a high throughput by labeling the fluorescent molecule in combination with a high content cell imager and a flow cytometer, and also provides a basis for a sufficient number of cells for subsequent amplification, obtaining the antibody sequence thereof and screening an antibody with affinity. The screening efficiency is greatly improved by means of the method.

IPC Classes  ?

• G01N 33/569 - ImmunoassayBiospecific binding assayMaterials therefor for microorganisms, e.g. protozoa, bacteria, viruses
• G01N 33/58 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving labelled substances
• G01N 15/14 - Optical investigation techniques, e.g. flow cytometry
• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids

Abstract

Disclosed in the present application are a multi-color electrochromic structure having a high brightness, saturation and purity, a multi-color electrochrmic device, and a method for preparing the structure. The multi-color electrochromic structure comprises an electrochromic layer, which comprises a plurality of layer number pair structures formed by sequentially and alternately superposing and arranging first optical structure layers or second optical structure layers and dielectric layers, wherein bonding interfaces of the dielectric layers and the first optical structure layers and of the dielectric layers and the second optical structure layers are respectively first surfaces and second surfaces of the dielectric layers, and the first surfaces and the second surfaces are fitted with the dielectric layers to form optical cavities. Further disclosed in the present application is the multi-color electrochromic device. In the present application, metal layers of different thicknesses or dielectric layers of different thicknesses are deposited on different substrates to serve as electrochromic structures, such that the multi-color electrochromic structures having different brightnesses, saturations and purities can be realized. The multi-color electrochromic structure of the present application belongs to structural colors, is stable in color, is brightly colored and has a high degree of manufacturability, and cannot age or lose color after being exposed to an outdoor environment for a long time.

IPC Classes  ?

• G02F 1/157 - Structural association of cells with optical devices, e.g. reflectors or illuminating devices
• G02F 1/153 - Constructional details
• H01B 5/14 - Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Abstract

Disclosed is a manufacturing method for a solar cell, the manufacturing method comprising: forming a power generation layer on a substrate; forming an ohmic contact layer on the surface of the power generation layer facing away from the substrate; forming a back electrode on the surface of the substrate facing away from the power generation layer; and, by using a printing process, forming a top electrode on the surface of the ohmic contact layer facing away from the power generation layer. Also disclosed is a solar cell. The present invention solves the problem in which current solar cells have low production capacity.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/0224 - Electrodes

Abstract

The present application discloses a testing method for testing currents of subcells of a multi-junction tandem photovoltaic cell and the degree of matching between the currents. The testing method comprises: testing I-V characteristics of a multi-junction tandem photovoltaic cell, so as to obtain an I-V curve of the multi-junction tandem photovoltaic cell; and measuring currents corresponding to respective current steps in the I-V curve, so as to obtain approximate values of short-circuit currents of subcells in respective junctions of the multi-junction tandem photovoltaic cell, and then calculating the degrees of mismatch between the currents in the present group, so as to obtain the degrees of mismatch between currents of the subcells of the multi-junction tandem photovoltaic cell. The testing method of the present application is used to calculate degrees of mismatch for all combinations of current values corresponding to respective steps in an I-V curve, so as to obtain the degrees of mismatch between currents of subcells of a multi-junction tandem photovoltaic cell. The testing process is fast and simple, does not require use of a standard light-source spectrum, and does not require complex and time-consuming procedures such as adding bias light and performing integration according to the standard light-source spectrum.

IPC Classes  ?

• H02S 50/10 - Testing of PV devices, e.g. of PV modules or single PV cells

Abstract

A multi junction laminated laser photovoltaic cell includes a cell unit laminated body and upper and lower electrodes electrically connected with the bottom and top of the cell unit laminated body, respectively, wherein the cell unit laminated body includes more than 6 laminated PN-junction subcells, adjacent two subcells are connected in series via tunnel junctions, wherein each PN-junction subcell uses a semiconductor single crystal material with a specific band gap as the absorption layer, the multiple subcells at least have two different band gaps, and the band gaps of the subcells are arranged in such an order that they decrease successively from the light incidence side to other side of the photovoltaic cell.

IPC Classes  ?

• H01L 31/0687 - Multiple junction or tandem solar cells
• H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

The present application discloses a vertical UMOSFET device with a high channel mobility and a preparation method thereof. The vertical UMOSFET device with a high channel mobility includes an epitaxial structure, and a source, a drain and a gate which match the epitaxial structure, where the epitaxial structure includes a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor, a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; a fourth semiconductor is also disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor is a high resistivity semiconductor.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/66 - Types of semiconductor device

Abstract

Disclosed are an III-nitride grooved gate normally-off-type P-channel HEMT device and a manufacturing method therefor. The HEMT device comprises a double-heterojunction structure formed by a first semiconductor, a second semiconductor and a third semiconductor, wherein the double-heterojunction structure has double-2-dimensional hole gases (2DHG); the third semiconductor has a band gap smaller than that of the second semiconductor, with the band gap being easily removed by using photoelectrochemical corrosion (PEC) technology selected according to an energy band, so as to form a groove structure; and the groove structure and a gate electrode structure are arranged in a matching manner, such that 2-dimensional hole gas in an area inside the second semiconductor which corresponds to the bottom of a gate electrode can be depleted. By means of the present application, a grooved gate normally-off-type P-channel HEMT device with a large output current and low on-resistance can be effectively realized.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

Disclosed are a gallium oxide nanostructure device, a preparation method therefor and the use thereof. The preparation method comprises: depositing metal gallium on a gallium oxide thin film, such that multiple regions of the surface of the gallium oxide thin film are corroded by the metal gallium, thereby forming multiple nanopores on the gallium oxide thin film; and fabricating an electrode fitting the gallium oxide thin film. By means of the preparation method, the metal gallium is used to corrode the gallium oxide thin film to form nanopores, and the resulting thin film with nanopores has a larger specific surface area, so that more gas molecules to be detected in an environment can be adsorbed, and same is conducive to reducing the device size and realizing a detection device having a high degree of integration, miniaturization, and a low power consumption. The preparation process for a nanostructure does not require additional semiconductor processing equipment for etching or corrosion, thereby facilitating cost reduction. In addition, the process is an in-situ corrosion process, without introducing a new surface state and interface state, there is no external pollution, and same has characteristics such as low damage and no interface pollution.

IPC Classes  ?

• G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid

Abstract

A flexible boron nitride nanoribbon aerogel has an interconnected three-dimensional porous network structure which is formed by mutually twining and contacting boron nitride nanoribbons and consists of macropores having a pore diameter of more than 50 nm, mesopores having a pore diameter of 2-50 nm and micropores having a pore diameter of less than 2 nm. The preparation method of the flexible boron nitride nanoribbon aerogel includes the following steps: performing high-temperature dissolution on boric acid and a nitrogen-containing precursor to form a transparent precursor solution, preparing the transparent precursor solution into precursor hydrogel, subsequently drying and performing high-temperature pyrolysis to obtain the flexible boron nitride nanoribbon aerogel. The boron nitride nanoribbon aerogel has excellent flexibility and resilience and can withstand different forms of loads from the outside within a wide temperature range.

IPC Classes  ?

• C01B 21/064 - Binary compounds of nitrogen with metals, with silicon, or with boron with boron
• B01J 13/00 - Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided forMaking microcapsules or microballoons

Abstract

3 epitaxial film materials.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/40 - Oxides
• C30B 25/18 - Epitaxial-layer growth characterised by the substrate
• C30B 29/16 - Oxides

Abstract

A carbon nanotube aligned film as well as a preparation method and application thereof are disclosed. The preparation method includes: providing a carbon nanotube dispersion solution comprising a selected carbon nanotube, a polymer as a carbon nanotube dispersing agent and binding to the selected carbon nanotube, an aromatic molecule binding to the selected carbon nanotube and allowing the surface of the selected carbon nanotube to have the same charges and an organic solvent being at least used for cooperating with the rest components of the dispersion solution to form uniform dispersion solution; and introducing a water phase layer to the upper surface of the dispersion solution to form a double-layer liquid phase system, partially or completely inserting a base into the double-layer liquid system, and then pulling out the base so as to form the carbon nanotube aligned film on the surface of the base.

IPC Classes  ?

• C09D 5/24 - Electrically-conducting paints
• C01B 32/159 - Carbon nanotubes single-walled
• C01B 32/174 - DerivatisationSolubilisationDispersion in solvents
• C01B 32/16 - Preparation
• C09D 7/65 - Additives macromolecular
• C09D 7/20 - Diluents or solvents
• C09D 7/45 - Anti-settling agents
• C09D 7/63 - Additives non-macromolecular organic
• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

Abstract

1-nn1-nnn epitaxial layer (11); etching the sacrificial layer (2) so as to strip the whole of an epitaxial structure on the sacrificial layer (2); and transferring the stripped epitaxial structure to the surface of a flexible transparent substrate (100). Compared with traditional planar thin films, the super-flexible transparent semiconductor thin film can improve the crystalline quality by releasing stress, and can also improve the flexibility and transparency by means of the characteristics of nanopillar materials. In addition, the total thickness of a buffer layer and the sacrificial layer (2) required by the epitaxial structure may be small, and no additional catalyst is needed in an epitaxial growth process, so that the epitaxial costs and process difficulty are reduced. Therefore, the present invention is high in practicability and can provide the technical support for invisible semiconductor devices and super-flexible devices.

IPC Classes  ?

• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

A salt solution-based performance-enhanced water voltaic power generator comprises a functional film (1) having a conductive nanomaterial layer and electrodes at two ends of the functional film. The functional film comprises a hydrophobic region and a hydrophilic region at two ends thereof. The conductive nanomaterial layer has conductive networks formed by a conductive nanomaterial in both the hydrophobic region and the hydrophilic region. An upper electrode (2) and a lower electrode (3) are provided in the hydrophobic region (1a) and the hydrophilic region (1b), respectively. A portion of the hydrophilic region provided with the lower electrode is always immersed in an aqueous solution, and a portion of the hydrophobic region provided with the upper electrode is always exposed from a surface of the aqueous solution. During an evaporation process of water in a region between the upper electrode and the lower electrode, a solute concentration gradient constructed in the hydrophilic region enables a concentration difference diffusion potential to be formed between the two electrodes. The water voltaic power generator effectively utilizes aqueous solutions having different salinities to generate power continuously, and is applicable as a power supply for supplying power to electronic/electrical devices. Further disclosed are a manufacturing method for a water voltaic power generator, and a water voltaic power generator-based integrated electricity generation system.

IPC Classes  ?

• H02N 3/00 - Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

Abstract

A film bulk acoustic resonator and a fabricating method thereof is provided. The fabricating method includes: fabricating a lower electrode on a first surface of an SOI substrate; forming piezoelectric layers on the first surface of the SOI substrate and the lower electrode; forming top electrodes on the piezoelectric layers; processing an air cavity on a second surface of the SOI substrate, wherein the second surface and the first surface are oppositely arranged. The fabricating method simplifies a preparation process of FBAR, a quality of a AlN film crystal grown though the fabrication method is high, an improvement of a device performance is facilitated, and meanwhile a thickness of a top silicon is controlled through a position of a silicon injected oxygen isolation to regulate a frequency of the film bulk acoustic resonator.

IPC Classes  ?

• H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elementsElectromechanical resonators Details
• H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Abstract

Disclosed is a flip-chip LED light source, comprising a substrate and at least one LED chip, wherein the LED chip is bonded with the front face of the substrate by means of a first surface with an electrode; a second surface of the LED chip is a light emergent face and faces away from the first surface; at least one pair of a P electrode and an N electrode of the at least one LED chip is connected to the front face of the substrate in a thermally-conductive manner by means of a plurality of thermal conductors arranged at intervals; and the maximum size a, in a direction parallel to the first surface, of any one of the thermal conductors is less than the minimum distance d between the P electrode and the N electrode. According to the flip-chip LED light source provided in the present application, a flip-chip bonding technique is combined with a self-aligned isolation technique, such that the chip yield is improved, and the thermal expansion stress of a bonding interface is reduced; moreover, the requirement for the alignment precision of a device is reduced, thereby reducing production costs and improving productivity.

IPC Classes  ?

• H01L 33/64 - Heat extraction or cooling elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A sensor including: a substrate including a first surface and a second surface opposing to each other, the first surface being recessed to form a first groove, and the substrate further including at least two through holes penetrating through the second surface and a bottom surface of the first groove; a dielectric layer disposed to cover the first surface, and opposing to the first groove; a metal layer disposed on the bottom surface of the first groove and avoiding openings of the through holes on the bottom surface of the first groove, wherein the dielectric layer, the metal layer and an interval between the dielectric layer and the metal layer form a slit optical waveguide; and a grating formed on the dielectric layer, wherein the grating is used to implement wave vector matching of an incident light with a mode of the slit optical waveguide.

IPC Classes  ?

• G01N 21/45 - RefractivityPhase-affecting properties, e.g. optical path length using interferometric methodsRefractivityPhase-affecting properties, e.g. optical path length using Schlieren methods

Abstract

The present application discloses a nano composite thin film having an infrared absorption function, a manufacturing method therefor and an application thereof. The nano composite thin film having an infrared absorption function comprises a porous thin film and an infrared absorption substance, the porous thin film having a connected three-dimensional network-like structure formed by mutually overlapping nanofibers and having a strong capillary force, and the infrared absorption substance being at least loaded within the three-dimensional network-like structure of the porous thin film. The nano composite thin film having an infrared absorption function provided in the present application has a wide infrared absorption band and a high infrared absorption rate, has a low cost and a simple preparation process, and can easily be produced on a large scale. The nano composite thin film can be directly used for filtering and thermal insulation and anti-infrared radiation, and can also overlap with the porous thin film to form a combined structure for thermal management or anti-infrared detection, having wide application prospects.

IPC Classes  ?

• D06M 15/53 - Polyethers
• D06M 13/144 - AlcoholsMetal alcoholates
• D06M 13/188 - Monocarboxylic acidsAnhydrides, halides or salts thereof
• D06M 13/02 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials with non-macromolecular organic compoundsSuch treatment combined with mechanical treatment with hydrocarbons
• D06M 13/328 - Amines the amino group being bound to an acyclic or cycloaliphatic carbon atom
• D06M 101/36 - Aromatic polyamides
• D06M 101/06 - Vegetal fibres cellulosic

Abstract

Disclosed are a gas diffusion layer, a preparation method therefor, and a use thereof. The gas diffusion layer comprises a support layer, and a composite carbon material diffusion layer and a microporous layer sequentially disposed on a surface of the support layer. The support layer is made of a porous material, and the composite carbon material diffusion layer comprises carbon nanotubes and carbon fibers.

IPC Classes  ?

• H01M 4/86 - Inert electrodes with catalytic activity, e.g. for fuel cells
• H01M 8/0234 - Carbonaceous material
• H01M 4/88 - Processes of manufacture

Abstract

A high-voltage flip-chip LED light source, a large-area LED light source packaging structure and packaging method, wherein the large-area LED light source packaging structure comprises a first substrate (10), a first LED chip (20) and a heat conductive connecting structure (30) arranged between the first LED chip (20) and the first substrate (10), the heat conductive connecting structure (30) comprises a plurality of insulating heat conductors (31) arranged at intervals. The high-voltage flip-chip LED light source comprises a second substrate (1) and a second LED chip (2), wherein a third surface (201) of the second LED chip (2) is provided with an electrode, a fourth surface (202) is a light emitting surface, at least one boss (11) is formed on the surface of the second substrate (1), and the third surface (201) of the at least one second LED chip (2) is connected with the top end surface of the boss (11) through an insulating heat conductive connecting adhesive (3). The large-area LED light source packaging structure solves the problem of uneven heat dissipation caused by warping of the first LED chip (20) in a large area; the second LED chip (2) in the high-voltage flip-chip LED light source can be seamlessly combined with the second substrate (1), and can avoid the problem that the insulating heat conductive connecting adhesive (3) overflows to the conductive electrode.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/64 - Heat extraction or cooling elements

Abstract

Disclosed by the present application is a multi-junction laminated laser photovoltaic cell, which comprises a cell unit laminate and lower and upper electrodes that are electrically connected to a bottom portion and top portion of the cell unit laminate, respectively. The cell unit laminate comprises six or more laminated PN junction sub-cells, and two adjacent sub-cells are connected in series by means of a tunnel junction. Each PN junction sub-cell uses a band gap semiconductor single crystal material as an absorption layer, at least two different band gaps are present in a plurality of sub-cells, and the band gaps of the sub-cells are arranged in decreasing order from a light incident side of the photovoltaic cell to the other side. Compared with the prior art, the multi-junction laminated laser photovoltaic cell provided by the present application uses a multi-band gap material as the absorption layer, which may cause the production of a multi-junction laminated cell to be easier to achieve (the effect being more significant for super multi-junction laminated photovoltaic cells), while also greatly reducing the total thickness of the cell and reducing manufacturing costs.

IPC Classes  ?

• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

A semiconductor device and a manufacturing method therefor. The manufacturing method comprises: manufacturing a semiconductor material layer, wherein the semiconductor material layer comprises two semiconductor layers that are stacked, and an etch conversion layer is provided between the two semiconductor layers; and etching a part of one of the semiconductor layers located within a selected region, stopping etching after reaching or entering the etch conversion layer, subsequently thermally decomposing a part of the etch conversion layer located within the selected region by means of thermal treatment to be fully removed, and realizing the termination of the thermal decomposition on the other semiconductor layer, thereby accurately forming a groove structure within the semiconductor material layer. The present invention can realize the accurate control of the depth of an etched groove on a semiconductor material, also can completely avoid surface damage caused by etching, can fully clean the surface of a lower barrier layer in a high-temperature process, and makes a dangling bond be fully opened, thereby obtaining an interface having high quality in a subsequent process, and further ensuring that the electrical property of the device is not affected by the fluctuation of an etching process.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

x1-xy1-yx1-xy1-yx1-xy1-y1-yN potential well layers which are grown alternately, wherein x > y, 0 < x ≤ 1, and 0 ≤ y < 1. According to the need of changes in deep ultraviolet LED light-emitting wavelength, flexibly changing the alloy proportion parameters x and y of metal Al in the barrier layers and the potential well layers of the superlattice structure can improve both the light transmission performance and hole carrier concentration of the P-type material at the same time.

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

Disclosed is a polychrome electrochromic structure, comprising a working electrode, an electrolyte and a counter electrode, wherein the electrolyte is distributed between the working electrode and the counter electrode; the working electrode comprises an electrochromic layer; the electrochromic layer comprises a first reflection face and a second reflection face arranged opposite each other and in parallel; a dielectric layer is provided between the first reflection face and the second reflection face; the first reflection face, the second reflection face and the dielectric layer form an optical cavity; and the dielectric layer is mainly made of an electrochromic material. The polychrome electrochromic structure can realize the fusion of structural colors and electrochromism, thereby presenting a rich and colorful change in color, and is simple in structure, can be easily prepared, has a low cost, and has a wide application prospect. In addition, also provided are a preparation method and an adjustment and control method for the polychrome electrochromic structure, an electrochromic device and an image display device comprising the polychrome electrochromic structure, etc.

IPC Classes  ?

• G02F 1/153 - Constructional details
• G02F 1/155 - Electrodes
• G02F 1/15 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect

Abstract

Disclosed are an optical film structure, and a manufacturing method therefor and the use thereof. The optical film structure comprises a first optical structure layer (4) and a second optical structure layer (2) that are arranged in parallel; the first optical structure layer (4) and the second optical structure layer (2) are optically reflective and/or transmissive; a dielectric layer (3) is arranged between the first optical structure layer (4) and the second optical structure layer (2); the bonding interfaces between the dielectric layer (3) and the first optical structure layer (4) and between the dielectric layer (3) and the second optical structure layer (2) are a first surface and a second surface of the dielectric layer (3) respectively; and the first surface, the second surface and the dielectric layer (3) define an optical cavity. The optical film structure shows colorful reflection/transmission colors, and particularly when an electrochromic material is used to form the dielectric layer (3), adjusting the magnitude of the voltage applied to the dielectric layer (3) also can realize fusion of the structural color and electrochromism of the optical film structure, so that the optical film structure shows more colorful color changes, and therefore can be widely applied in multiple fields.

IPC Classes  ?

• G02F 1/157 - Structural association of cells with optical devices, e.g. reflectors or illuminating devices
• G02F 1/15 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect

Abstract

Disclosed by the present application are a flexible boron nitride nano-belt aerogel and a preparation method therefor. The flexible boron nitride nano-belt aerogel has a communicating three-dimensional porous network structure, and the three-dimensional porous network structure is formed by interwinding and lapping boron nitride nano-belts and is made of macropores with a pore size greater than 50nm, mesopores with a pore size of 2nm to 50nm and micropores with a pore size smaller than 2nm. The preparation method comprises: subjecting boric acid and a nitrogen-containing precursor to high-temperature digestion so as to form a transparent precursor solution, then preparing precursor hydrogel, and then carrying out drying and high-temperature pyrolysis so as to obtain the flexible boron nitride nano-belt aerogel. The boron nitride nano-belt aerogel according to the present application has excellent flexibility and elasticity restorability, may bear outside loads of different forms in a wide temperature range and is restorable in elasticity. The preparation process is simple, mild in reaction conditions, easy in operation and low in cost, environmentally friendly and pollution-free, and may achieve continuous production.

IPC Classes  ?

• C01B 21/064 - Binary compounds of nitrogen with metals, with silicon, or with boron with boron
• B82Y 40/00 - Manufacture or treatment of nanostructures

Abstract

The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.

IPC Classes  ?

• H01L 29/76 - Unipolar devices
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/22 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
• H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , ,  or
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/786 - Thin-film transistors
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/66 - Types of semiconductor device
• H01L 29/872 - Schottky diodes

Abstract

Provided are a vertical UMOSFET device with high channel mobility, and a preparation method therefor. The vertical UMOSFET device with high channel mobility comprises an epitaxial structure, and a source electrode (7), a drain electrode (1) and a gate electrode (9) mating with the epitaxial structure, wherein the epitaxial structure comprises a first semiconductor, and second and third semiconductors successively arranged on the first semiconductor; a groove structure mating with the gate electrode (9) is further provided in the epitaxial structure; the groove structure continuously extends from a first surface of the epitaxial structure into the first semiconductor; a fourth semiconductor is at least further provided between an inner wall of the groove structure and the second semiconductor; and the fourth semiconductor is a high-resistance semiconductor (6). A P+channel layer (4) close to the surface of a gate trench is transformed into the high-resistance semiconductor (6), such that a region, where inversion actually occurs, of the device is transferred from the surface into the P+ channel layer (4) without etching damage, thereby avoiding deterioration of the mobility of an inversion layer in a channel region caused by trench etching, and obtaining the vertical UMOSFET device with high channel mobility.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/336 - Field-effect transistors with an insulated gate

Abstract

Disclosed are an application of a semiconductor compound in the benzaldehyde specificity detection and a detection method therefor. The detection method comprises: using a semiconductor compound as an SERS active substrate material, contacting same with a detection sample that may contain benzaldehyde, then carrying out detection by means of a Raman spectrometer, and according to a specificity Raman enhancement effect generated between the semiconductor compound and the benzaldehyde, realizing the benzaldehyde specificity detection. Compared with a noble metal substrate material, the semiconductor compound as an SERS active substrate material is wide in selectable range, low in cost, simple in operation, and quick and effective. The semiconductor compound can generate the specificity Raman enhancement effect on the benzaldehyde, can realize the benzaldehyde specificity detection and can effectively distinguish benzyl alcohol from the benzaldehyde. A tiny quantity of benzaldehyde mixed into the common organic solvent benzyl alcohol of injection type medicines can be effectively identified, and the usage safety of medicines can be guaranteed to a certain degree.

IPC Classes  ?

• G01N 21/65 - Raman scattering

Abstract

Disclosed is a method for manufacturing an SERS chip. The manufacturing method comprises: using a magnetron sputtering process to manufacture and form a semiconductor oxide film on a conductive substrate; and regenerating the semiconductor oxide film by means of electrochemical charge-discharge technology, and obtaining an SERS chip. Further disclosed is an SERS chip obtained via the manufacturing method. Further disclosed is a method for regenerating a used SERS chip. The invention resolves common issues regarding currently existing precious-metal SERS chips such as high costs, a short shelf life, and poor cycle performance.

IPC Classes  ?

• G01N 21/65 - Raman scattering
• C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering

Abstract

A method for fabricating a semiconductor optoelectronic device, the fabricating method comprising a step of growing and forming an optoelectronic device structure on a substrate, the optoelectronic device structure comprising an N-type layer, an active zone light-emitting layer, and a P-type layer; and further comprising: providing a mask on the optoelectronic device structure, and using the mask to perform ion implantation on any one or more among the N-type layer, the active zone light-emitting layer, and the P-type layer, thereby regulating the area and/or shape of a light-exiting region of the optoelectronic device structure. The present fabricating method may take increasing the effective usage area of a chip, lowering the damage effect to a sidewall of a material, eliminating the problem of optical crosstalk of a device, and improving the light-emitting efficiency of the device into consideration; moreover, the space between high impedance isolation regions (1, 3) may be precisely regulated in practical production by means of changing the size of a mask, thereby flexibly defining the characteristic size of a chip so as to prepare devices having a size of several microns to several hundred microns.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

Disclosed in the present application are a thin-film bulk acoustic resonator (FBAR) and a manufacturing method therefor. The manufacturing method comprises: manufacturing a lower electrode on a first surface of an SOI substrate; forming a piezoelectric layer on the first surface and the lower electrode of the SOI substrate; forming a top electrode on the piezoelectric layer; and forming an air cavity on a second surface of the SOI substrate, wherein the second surface and the first surface are opposite to each other. The manufacturing method provided by the present application simplifies the manufacturing process for a FBAR; an AlN thin film grown by the method has high crystal quality, thereby facilitating improvement of device performance; moreover, the frequency of the resonator is adjusted by controlling the thickness of the top silicon by means of the position of separation by implanted oxygen of silicon; the SOI material has the characteristics of low power consumption, high integration density, and anti-radiation property; the present application reduces the complexity of a device manufacturing process and is suitable for a radio frequency front-end for a future 5G communication system.

IPC Classes  ?

• H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Abstract

Disclosed are a carbon nanotube oriented thin film, a manufacturing method therefor and an application thereof. The manufacturing method comprises providing a carbon nanotube dispersion liquid, wherein the carbon nanotube dispersion liquid comprises a selected carbon nanotube; a polymer that is used as a carbon nanotube dispersing agent and specifically bound with the selected carbon nanotube; an aromatic molecule that is bound with the selected carbon nanotube and makes the surface of the carbon nanotube have the same charge; and an organic solvent that is at least used for being blended with the remaining components of the dispersion liquid so as to form a uniform dispersion liquid. Furthermore, an aqueous phase layer can be introduced onto the upper surface of the dispersion liquid to form a dual-layer liquid phase system, a substrate is partially or completely inserted into the dual-layer liquid phase system, then the substrate is pulled out, and the carbon nanotube oriented thin film is formed on the surface of the substrate. The manufacturing method of the present application is simple and efficient, and a large area and continuously oriented carbon nanotube thin film can be easily enlarged and manufactured.

IPC Classes  ?

• C01B 32/174 - DerivatisationSolubilisationDispersion in solvents

Abstract

Provided are a flexible solar cell and a manufacturing method therefor. By means of manufacturing a flexible substrate (50) on a back electrode (40), a solar cell unit and the flexible substrate are transferred onto a temporary substrate (70), and the temporary substrate is then separated from the flexible substrate after the manufacturing of the flexible solar cell is completed. Therefore, tedious bonding and de-bonding operations in the process of manufacturing a cell are reduced, thereby improving the production efficiency and preventing the cell from being damaged under the high temperature conditions required for bonding. Furthermore, the process is rapid and will not easily cause damage to the cell. A front electrode and a back electrode of a flexible solar cell and a flexible substrate can be manufactured by using a plating method, wherein same has a relatively low cost, low device requirements, and facilitates industrial mass production thereof.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Abstract

A grating slit waveguide composite structure-based sensor, the sensor comprising: a substrate (1) which comprises a first surface and a second surface that are opposite to each other, the first surface being recessed to form a first groove, and the substrate (1) further comprises at least two through holes (3) penetrating the second surface and a bottom surface of the first groove; a dielectric layer (4) which is disposed covering the first surface, the dielectric layer (4) being opposite to the first groove; and a metal layer (2) which is disposed on the bottom surface of the first groove and avoids an opening of the through hole (3) on the bottom surface of the first groove, wherein the dielectric layer (4), the metal layer (2) and the spacing between the dielectric layer (4) and the metal layer (2) constitute a slit optical waveguide; a grating (5), the grating (5) being formed on the dielectric layer (4), or the grating (5) being formed on the bottom surface of the first groove, or the grating (5) being formed by means of the metal layer (2), said grating (5) being used to achieve wave vector matching of incident light (7) with a mode of the slit optical waveguide. The present sensor simultaneously has a high quality factor and high sensing sensitivity, and may obtain ultra-high device figure of merit.

IPC Classes  ?

• G01N 21/41 - RefractivityPhase-affecting properties, e.g. optical path length

Abstract

233, allowing the gallium oxide semiconductor electronic device with a vertical structure to play a greater role in the field of power semiconductor electronic devices.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 21/336 - Field-effect transistors with an insulated gate

Abstract

A gallium oxide vertically-structured semiconductor electronic device and a manufacturing method therefor. The gallium oxide vertically-structured semiconductor electronic device comprises a buffer layer, a current blocking layer, and a channel layer arranged in sequence. Current through holes are distributed in the current blocking layer. A source and a gate are provided on the channel layer. The buffer layer is connected to a drain. The drain and the current blocking layer are arranged opposite to each other. The current through holes are located below the gate. The channel layer is electrically connected to the buffer layer by means of the current through holes. The gallium oxide vertically-structured semiconductor electronic device can meet the needs of high power switches well, and has a series of advantages such as large saturation current and high breakdown voltage.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

1) nitrogen face and located at the n type side of the epitaxial structure, the second face is located at the p type side of the epitaxial structure, the n type side of the epitaxial structure is electrically contacted with an n type electrode, the p type side is electrically contacted with a p type electrode, and a ridge waveguide structure is formed on the first face. The nitride semiconductor light-emitting device, especially a III-V nitride semiconductor laser or a super-radiance light-emitting diode, of the present application, has the advantages of low resistance, low internal loss, small threshold current, small thermal resistance and good stability and reliability and the like, and meanwhile the preparation process is simple and is easily implemented.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01S 5/227 - Buried mesa structure
• H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

Disclosed by the present invention is a key distribution method, the method comprising: a first terminal downloading a public noise source (PNS) from a public channel and saving the PNS to obtain a local noise source (LNSA); the first terminal using the LNSA to drive a superlattice chaotic device to obtain a superlattice chaotic output signal (COA); the first terminal performing an analog-to-digital conversion on the COA to obtain a digital chaotic output signal (DCOA); the first terminal generating auxiliary data (HA) after performing security sketch processing on the DCOA and publishing the HA to the public channel so as to obtain public auxiliary data (PH) for download by a second terminal. Also disclosed by the embodiments of the present invention is a terminal device. Thus, high-speed, convenient and secure key distribution may be completed by using a superlattice chaotic device.

IPC Classes  ?

• H04L 9/00 - Arrangements for secret or secure communicationsNetwork security protocols
• G06F 7/58 - Random or pseudo-random number generators