Disclosed are an infrared light-emitting diode, an infrared light-emitting diode package, and a light-emitting device. The infrared light-emitting diode includes a semiconductor epitaxial lamination layer, a first electrode, and an adhesion layer. The semiconductor epitaxial lamination layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layer includes a first ohmic contact layer, a first window layer, and a first cladding layer. The first electrode located on the first type semiconductor includes a main electrode and multiple extending electrodes. The extending electrodes extend outward from the main electrode. The adhesion layer is located between the first window layer and the main electrode. The present invention enhances the adhesion between the first electrode and the semiconductor epitaxial lamination layer via the adhesion layer, improves the bonding force of the electrode, thereby elevating the reliability of the infrared light-emitting diode.
A micro light-emitting element includes a substrate and at least one micro light-emitting diode. Each micro light-emitting diode includes a semiconductor epitaxial stacked layer, which includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and comprises a first surface and a second surface; the first surface is located on a side near the first-type semiconductor layer, the second surface is located on a side near the second-type semiconductor layer, and the first surface faces towards the substrate; and an adhesive film layer, which is located between the substrate and the semiconductor epitaxial stacked layer. An etching protective layer is disposed between the adhesive film layer and the first surface. The micro light-emitting element can reduce damage to the semiconductor epitaxial stacked layer during a residual adhesive removing process after laser lifting-off of each micro light-emitting diode, thus improving reliability of the micro light-emitting element.
A light-emitting device includes a semiconductor epitaxial unit having a first surface and a second surface that are opposite to each other, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are disposed sequentially in such order in a direction from the first surface to the second surface. The active layer includes a quantum well structure that has n periodic units, each of which includes a well layer and a barrier layer that are sequentially disposed. The second semiconductor layer includes a cladding layer and a current spreading layer. A ratio of a thickness of the current spreading layer to a current density of the light-emitting device ranges from 0.6 to 4. A light-emitting apparatus is also provided in the disclosure.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
4.
LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE INCLUDING THE SAME
A light-emitting diode includes a semiconductor epitaxial structure which includes a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in sequence. The second semiconductor layer includes a current spreading layer, which includes a first doped layer doped with a first p-type impurity, a second doped layer doped with the first p-type impurity and a second p-type impurity, and a third doped layer doped with the second p-type impurity. A concentration of the first p-type impurity in the first doped layer is less than or equal to a concentration of the first p-type impurity in the second doped layer. A concentration of the second p-type impurity in the third doped layer is greater than a concentration of the second p-type impurity in the second doped layer. A light-emitting device including the aforesaid light-emitting diode is also provided.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than λ/2n1, wherein A is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, n2 is a refractive index of the second transparent dielectric layer and is greater than n1, and n2 is lower than a refractive index of the second conductivity type semiconductor layer. A light-emitting apparatus including the aforesaid flip-chip light-emitting diode is also provided.
Disclosed are a flip-chip light-emitting element and a light-emitting device. The flip-chip light-emitting element includes an epitaxial layer, a contact electrode, an insulating layer and a pad electrode. The epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer, and a contact electrode is formed on the surface of the epitaxial layer. An insulating layer is formed on the epitaxial layer, and covers the surface, the edge area and the sidewall of the epitaxial layer. A pad electrode is formed on the insulating layer and connected to the contact electrode, and the pad electrode at least covers part of the sidewall of the epitaxial layer. When the flip-chip light-emitting element of the present disclosure is solidified through solder paste, it is possible to prevent Sn and Ag from migrating and ascending into the active layer, thereby improving the reliability of the flip-chip light-emitting element.
Disclosed are a light-emitting device, a manufacturing method thereof, and a display screen. In the light-emitting device, an isolation trench is formed from one side of the first semiconductor layer to one side of the second semiconductor layer. A reflective structure is formed on the side wall of the isolation trench and the first semiconductor layer, which helps to reduce light loss and improving the light output efficiency of the device. The isolation trench does not completely penetrate the second semiconductor layer, so that the second semiconductor layer located on the light output surface side is a continuous and uninterrupted integrated structure, and a surface thereof remains flat so that the transparent conductive layer has a flat structure, improving the overall coverage of the transparent conductive layer. The present invention has no cracks, peeling problems, thus improving the electrical stability of the device and increasing the reliability thereof.
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
Disclosed is a light-emitting diode, which comprises a semiconductor epitaxial laminated layer provided with a first surface and a second surface which are opposite one another, as well as a first-type semiconductor layer, active layers and a second-type semiconductor layer, which are sequentially stacked in the direction from the first surface to the second surface. The active layers comprise, in the direction from the first surface to the second surface, a first active layer, a second active layer and a third active layer. The first active layer comprises a number n1 of periodic quantum well structures, the second active layer comprises a number n2 of periodic quantum well structures, and the third active layer comprises a number n3 of periodic quantum well structures. Each periodic quantum well structure comprises a well layer and a barrier layer which are sequentially deposited, a band gap of the barrier layer being larger than a band gap of the well layer. The light-emitting diode is characterized in that: the thickness of the barrier layers of the first active layer is set to be d1, the thickness of the barrier layers of the second active layer is set to be d2, the thickness of the barrier layers of the third active layer is set to be d3, and d2>d1≥d3. The present invention can improve the light-emitting brightness and reliability of a light-emitting diode.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
9.
LIGHT EMITTING DIODE, LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD FOR LIGHT EMITTING DIODE
A light emitting diode, a light emitting device, and a manufacturing method for the light emitting diode are provided. The light emitting diode includes: a substrate having an upper surface and a lower surface opposite to each other; a semiconductor epitaxial stack including a first semiconductor layer, an active layer, and a second semiconductor layer stacked on the upper surface of the substrate; a transparent conductive layer disposed on an upper surface of the second semiconductor layer away from the substrate; a sidewall formed on edges of the semiconductor epitaxial stack and the substrate; and a passivation layer covering a surface of the transparent conductive layer and connected to the sidewall, wherein a portion of the sidewall not covered by the passivation layer has a roughened structure, and the roughened structure includes a protrusion.
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Disclosed in the present invention are a light-emitting diode and a light-emitting device. The light-emitting diode comprises: a semiconductor epitaxial stack, having a first surface and a second surface which are opposite to each other, and comprising a first semiconductor structure, an active layer, a second semiconductor structure, and a third semiconductor layer, wherein a recess position and a non-recess position are formed on the side of the third semiconductor layer distant from the second semiconductor structure; an ohmic contact layer, provided at the non-recess position of a portion of the third semiconductor layer; a light-transmissive dielectric layer, provided on the side of the ohmic contact layer distant from the semiconductor epitaxial stack, and having a plurality of openings running through the light-transmissive dielectric layer; and a reflecting layer, provided on the light-transmissive dielectric layer and filling the openings. The light-emitting diode is characterized in that: the non-recess position of the third semiconductor layer has a first area, the second semiconductor structure has a second area, and the ratio of the first area to the second area is 0.7-1.0; and the ohmic contact layer has a third area, and the ratio of the third area to the second area is 0.5-1.
Disclosed is a light emitting diode including a semiconductor stack, a first electrode, and a second electrode. The semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer has a terrace. The first electrode located on a terrace of the semiconductor stack is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. Two ends of a first inclined sidewall of the semiconductor stack are respectively connected to an upper surface of the second semiconductor layer and the terrace. An included angle between the first inclined sidewall and the terrace ranges from 110° to 135°. An interval between the first electrode and the light emitting layer ranges from 2.5 μm to 13 μm. By the configuration, the reliability and the ESD protection performance of the LED can be improved.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A light emitting diode includes a semiconductor stack layer, an insulative barrier layer, and a metal protective layer. The semiconductor stack layer includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The insulative barrier layer is disposed on a lower surface of the semiconductor stack layer and has a first opening corresponding to a lower side of the first semiconductor layer. The metal protective layer is disposed on the lower surface of the semiconductor stack layer and connected to the insulative barrier layer. A portion of the metal protective layer is filled in the first opening. Vertical projection points of edge endpoints of an upper surface of the insulative barrier layer on a horizontal plane are distributed within a vertical projection first connecting line section of edge endpoints of an upper surface of the metal protective layer on the horizontal plane.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A light emitting diode includes: a substrate; an epitaxial structure disposed on a surface of the substrate and including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in a direction away from the substrate; a first electrode disposed on the first semiconductor layer; a second electrode disposed on the second semiconductor layer; and a first trench disposed on a surface of the second semiconductor layer away from the substrate, penetrating the active layer starting from the surface of the second semiconductor layer away from the substrate, and extending to a portion of the first semiconductor layer. In the disclosure, the arrangement of the trench is beneficial to the uniform distribution of the current, so that the brightness of light emission and reliability of a chip is improved.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
14.
LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE HAVING THE SAME
A light emitting diode includes an epitaxial semiconductor layer including an N-type nitride layer, a v-pit emergence layer, a strain adjustment layer, an active layer, and a P-type nitride layer that are sequentially stacked in that order. The active layer has a plurality of barrier layers and a plurality of well layers that are alternatively stacked. The epitaxial semiconductor layer includes a v-pit. The v-pit has an opening that is located at a topmost one of the barrier layers of the active layer, and has a width that is greater than 260 nm. The v-pit emergence layer is doped with carbon (C) at a doping concentration that is no less than 7×1016/cm3. A light emitting device includes the light emitting diode.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio
A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio
2
π
s
s
≤
γ
≤
2
(
(
s
L
1
)
+
L
1
)
s
A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio
2
π
s
s
≤
γ
≤
2
(
(
s
L
1
)
+
L
1
)
s
under a same light-emitting area. Under the same light-emitting area of the active layer, an exposed portion on a sidewall of the first mesa is less, and thus problems of light absorption and non-radiative recombination caused by a defect of the sidewall of a small-sized light-emitting diode are reduced during working at a low current. In addition, a non-planar light-emitting surface can improve a light-emitting probability of the sidewall of the light-emitting diode, and an external light-emitting efficiency of the light-emitting diode is further improved.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A light emitting diode includes an epitaxial structure, an N-type electrode, and a transparent conductive electrode. The epitaxial structure includes a P-type semiconductor layer, a light emitting layer, and an N-type semiconductor layer stacked sequentially. The N-type electrode is connected to the N-type semiconductor layer and includes a starting electrode and X extension electrodes, X≥2, the X extension electrodes are connected to the starting electrode, and the X extension electrodes are spaced apart along the edge of the starting electrode. The transparent conductive electrode is connected to the P-type semiconductor layer, wherein the transparent conductive electrode is a distributed electrode and includes Y independent surrounding electrodes, Y≥2, and Y≤X. A first projection of each surrounding electrode on a horizontal plane surrounds a second projection of an extension end of the extension electrode on the horizontal plane.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
A light emitting diode and a light emitting device are provided. The light emitting diode includes: a semiconductor epitaxial stacked layer at least including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer and formed with a first mesa; a first contact electrode located on the first mesa and electrically connected to the first conductive type semiconductor layer; a second contact electrode located on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; and a first wiring electrode and a second wiring electrode located on the first contact electrode and the second contact electrode. Horizontal projections of the first wiring electrode and the second wiring electrode on the semiconductor epitaxial stacked layer fall within horizontal projections of the first contact electrode and the second contact electrode.
A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.
An infrared light-emitting diode (LED) includes a semiconductor light-emitting unit which includes an active layer, a first waveguide layer, a second waveguide layer, a first cladding layer and a second cladding layer. The active layer includes at least one pair of layers. Each pair of layers includes a well layer and a barrier layer. The first and the second waveguide layers are respectively disposed on two opposite sides of the active layer, and are independently made of a semiconductor compound represented by (AlX3Ga1-X3)Y1In1-Y1P, wherein 0≤X3≤1 and 0
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
21.
LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS
A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1≥2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0
A light-emitting element and a light-emitting device are provided. The light-emitting element includes an epitaxial layer, an insulating layer formed on a surface of the epitaxial layer, and an electrode structure. The electrode structure includes a first electrode connected to a first conductivity type semiconductor layer and a second electrode connected to a second conductivity type semiconductor layer. The electrode structure includes a wiring portion and a connecting portion. The wiring portion is located above the insulating layer. The connecting portion penetrates through the insulating layer from an edge of the wiring portion and extends towards the epitaxial layer. The connecting portion is arranged to extend from the edge of the wiring portion towards the epitaxial layer. Further, a projection of the wiring portion on a front surface of the substrate does not overlap a projection of the connecting portion on the front surface of the substrate.
A semiconductor light-emitting element and a light-emitting device thereof are provided. The semiconductor light-emitting element includes a transparent substrate, a transparent bonding layer, and a semiconductor laminated layer including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The transparent bonding layer is located between the transparent substrate and the semiconductor laminated layer. The transparent substrate has a first surface facing towards the semiconductor laminated layer, and the first surface has an uneven structure. The semiconductor laminated layer has a first surface facing towards the transparent substrate. The transparent bonding layer includes a first bonding layer in contact with the first surface of the transparent substrate, and a refractive index of the first bonding layer is lower than that of the transparent substrate. By utilizing the optimized design, the quality of bonding is ensured while improving the light extraction efficiency of the semiconductor light-emitting element.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
24.
WAFER SINGULATING METHOD AND LED CHIP AND LIGHT EMITTING MODULE
A wafer singulating method includes: providing a wafer product having front and back sides the front side being formed with scribe lines; deep scribing with a laser along the scribe lines on the front side to form a plurality of intersecting trenches; and cleaving the back side along the trenches on the front side. The cleaving of the back side proceeds in different directions each of which is directed to a center of the wafer product from a periphery of the wafer product. The cleaving in each of the directions proceeds along the trenches one after the other from one of the trenches nearest to the periphery of the wafer product and ceases near or at the center.
A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially disposed in such order in a thickness direction from the first surface to the second surface. An ohmic contact layer is disposed on the second surface of the semiconductor epitaxial structure, and a light-transmissive dielectric layer is disposed on the ohmic contact layer away from the semiconductor epitaxial structure. The light-transmissive dielectric layer has a plurality of through holes. A reflection layer is disposed on the light-transmissive dielectric layer and fills the through holes so as to be electrically connected to the ohmic contact layer.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
The disclosure relates to the technical field of semiconductor manufacturing and particularly relates to a light emitting diode having an epitaxial structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. An upper surface and a sidewall of a first pad electrode are covered with a first metal covering layer. The first metal covering layer is provided with a bump at a bottom portion of the sidewall of the first pad electrode. The bump is located below the insulating layer. In this way, the metal covering layer is allowed to completely cover the pad electrode and protect the edge of the bottom portion of the pad electrode. After the insulating layer is detached herein, an active material in the pad electrode below the insulating layer is prevented from contacting the external environment, and the reliability of the light emitting diode is therefore improved.
A light-emitting device includes a semiconductor epitaxial structure, a reflection layer, and a light-transmissive dielectric structure. The semiconductor epitaxial structure has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first surface is a light-exiting surface. The reflection layer is disposed on the semiconductor epitaxial structure away from the light-exiting surface, and is adapted for reflecting light emitted by the active layer. The light-transmissive dielectric structure is disposed between the reflection layer and the semiconductor epitaxial structure, and includes a first sublayer, a second sublayer, and a third sublayer. A light-emitting apparatus and a plant lighting apparatus are also provided.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The disclosure relates to a vertical-type light-emitting diode, which includes a semiconductor stack layer, a first electrode, a second electrode and a protruding protective electrode. The semiconductor stack layer has an upper surface and a lower surface opposite to each other. The semiconductor stack layer includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in sequence from the lower surface to the upper surface. The first electrode is located on the lower surface of the semiconductor stack layer and connected to the first semiconductor layer. The second electrode is located on the upper surface of the semiconductor stack layer and is connected to the second semiconductor layer, and the protruding protective electrode is connected to the second electrode. The upper surface of the protruding protective electrode is higher than the upper surface of the second electrode.
A photodiode includes a substrate, a device structure, a barrier ring region, a photosensitive region, an oxide ring, and an oxide layer. The substrate has a first surface and a second surface opposite to the first surface. The device structure includes an N-type doped region, a non-doped intrinsic layer, and a P-type doped region. The barrier ring region is disposed in the substrate at a periphery of an upper portion of the substrate and is spaced apart from the P-type doped region. The photosensitive region is located above the P-type doped region. The oxide ring is disposed on the substrate and surrounds the photosensitive region. The oxide layer is disposed between the oxide ring and the second surface. The P-type doped region includes a deep doped region and a shallow doped region that are adjacent to each other. A method for manufacturing the photodiode is also provided.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A micro light-emitting diode and a display panel are provided. The micro light-emitting diode includes a semiconductor epitaxial stacked layer including a first semiconductor layer, a second semiconductor layer and an active layer therebetween; a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The second semiconductor layer includes an N-type gallium phosphide (GaP) window layer, and the N-type GaP window layer plays a role in current spreading. The problem of low luminous efficiency of the micro light-emitting diode at a low current density can be solved and the luminous efficiency of the micro light-emitting diode at a low current density can be improved.
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
31.
LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS
A light-emitting device includes: an epitaxial structure having a first surface and a second surface opposite to the first surface, and including a first type semiconductor layered unit that includes a first type window layer and a first type ohmic contact layer disposed at one side of the first type window layer; an active layer; and a second type semiconductor layered unit. The first type window layer is disposed between the first type ohmic contact layer and the active layer. The first type ohmic contact layer contains a material represented by Alx1Gay1InP, where 0≤x1≤1, 0≤y1≤1. The first type window layer contains a material represented by Alx2Gay2InP, where 0
A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
33.
LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS
A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes well layers and barrier layers that are alternately stacked. The active layer has an upper surface that is adjacent to the second semiconductor layer, and a lower surface that is opposite to the upper surface. The first semiconductor layer is doped with an n-type dopant, which has a first concentration of 5E17/cm3 at a first point in the first semiconductor layer. The first point of the first semiconductor layer and the lower surface of the active layer have a first distance therebetween. The first distance ranges from 150 nm to 500 nm.
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
A light-emitting device includes: an epitaxial structure that has a first surface and a second surface; a first metal electrode that is disposed on the first surface, and that includes a main electrode and extending electrodes; current transmission blocks that are disposed on the second surface, and each having an electrode-facing sidewall and a non-electrode-facing sidewall; and a current blocking layer that is disposed in spaces among the current transmission blocks.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
35.
LIGHT-EMITTING DIODE, LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE
A light-emitting diode includes an epitaxial structure and a first metal electrode. The epitaxial structure has a first surface and a second surface opposite thereto, and includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer. The first-type semiconductor layer includes an ohmic contact layer which at least partially defines the first surface. The first metal electrode is disposed on the first surface, and includes a main electrode and auxiliary electrodes which are disposed on and electrically connected to the ohmic contact layer. The ohmic contact layer is made of AlxGayInP, where 0≤x≤1 or 0≤y≤1. In a top view of the light-emitting layer, a projection of each auxiliary electrode on the first surface is smaller than or equal to that of the ohmic contact layer on the first surface. A light-emitting divide including the light-emitting diode, and a method for manufacturing the light-emitting diode are also provided.
A vertical LED chip structure, a method of manufacturing the same, and a light-emitting device are provided. After an epitaxial structure is bonded to a substrate, the epitaxial structure is etched first to form a first mesa. After the first mesa is formed, the epitaxial structure is continuously etched at the first mesa until the epitaxial structure is etched through and a reflective layer is exposed, and a second mesa is formed. A protective layer is formed on a surface of the structure where the first mesa and the second mesa are formed. The protective layer covers the exposed reflective layer at the second mesa, protects the epitaxial structure and the reflective layer, and protects a side wall of the epitaxial structure and the reflective layer from being corroded by a processing solution after a back surface of the substrate is polished.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
37.
LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
A light-emitting device includes a substrate, a semiconductor epitaxial structure, and an etch stop layer. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure has a side surface that has a roughened structure formed with protrusions, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer disposed on the first surface of the substrate in such order. The etch stop layer is disposed on a surface of the semiconductor epitaxial structure away from the substrate for preventing an etching solution from etching the semiconductor epitaxial structure. A light-emitting package and a light-emitting apparatus are also provided. A method for manufacturing a light-emitting device is also provided.
A light-emitting diode and a display device are provided. The light-emitting diode includes an epitaxial structure, and the epitaxial structure has a light-emitting surface and a rear surface opposite to the light-emitting surface. The light-emitting surface includes a peripheral region and a middle region surrounded by the peripheral region, the peripheral region is covered with an insulating layer, and the area of the middle region accounts for 60% to 99% of the area of the light-emitting surface. The width of the insulating layer on the light-emitting surface is between 5 μm and 20 μm, so that it is possible to ensure a sufficient light output rate of the light-emitting diode, and the thickness of the insulating layer may be properly increased as well to enhance the protection for the sidewall of the light-emitting diode and prevent IR current leakage from affecting the performance of the device.
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
39.
MICRO LIGHT-EMITTING DIODE, MICRO LIGHT-EMITTING ELEMENT AND PREPARATION METHOD THEREFOR, AND DISPLAY
Disclosed in the present invention are a micro light-emitting diode, a micro light-emitting element and a preparation method therefor, and a display. The micro light-emitting element comprises a substrate, and at least one micro light-emitting diode which is arranged on the substrate. The micro light-emitting diode comprises: a semiconductor epitaxial stack, which comprises a first-type semiconductor layer, an active layer and a second-type semiconductor layer that are arranged in sequence, and has a first surface and a second surface that are opposite to each other, the first surface being close to one side of the first-type semiconductor layer, the second surface being close to one side of the second type semiconductor layer, and the first surface being close to the substrate; and an adhesive film layer, which is located between the substrate and the first surface of the semiconductor epitaxial stack. The micro light-emitting element is characterized in that an etching protection layer is arranged between the adhesive film layer and the first surface of the semiconductor epitaxial stack. The present invention can reduce damages to semiconductor epitaxial stacks during the residual adhesive removing process after laser stripping of micro light-emitting diodes, thus improving the reliability of micro light-emitting elements.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
40.
LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE PACKAGE, AND LIGHT-EMITTING DEVICE
A light-emitting diode includes a semiconductor epitaxy stack, a reflection layer, a first pad electrode, and a second pad electrode. The semiconductor epitaxy stack has a first surface and a second surface opposite to the first surface. The first surface has an electrode region and a light exit region. The semiconductor epitaxy stack includes a first type semiconductor layer, an active layer and a second type semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The reflection layer is disposed on the second surface opposite to the first surface. The first pad electrode is disposed on the electrode region and is electrically connected to the first type semiconductor layer. The second pad electrode is disposed on the electrode region and is electrically connected to the second type semiconductor layer.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
A semiconductor light-emitting device includes a bonding substrate, a multi-layered metal unit, and a semiconductor lighting unit. The bonding substrate includes an upper surface and a lower surface opposite to the upper surface. The multi-layered metal unit is disposed on the upper surface of the bonding substrate such that an exposed region of the upper surface of the bonding substrate is exposed from the multi-layered metal unit. The semiconductor lighting unit is disposed on the multi-layered metal unit opposite to the bonding substrate. A method for manufacturing the semiconductor light-emitting device is also disclosed.
A light-emitting includes an epitaxial structure, a diffusion blocking layer, an ohmic contact layer, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer disposed sequentially in such order. The diffusion blocking layer is disposed on a surface of the first semiconductor layer opposite to the active layer. The ohmic contact layer is disposed on a surface of the diffusion blocking layer opposite to the first semiconductor layer. The first electrode is disposed on a surface of the ohmic contact layer opposite to the diffusion blocking layer and is electrically connected to the first semiconductor layer. The second electrode is disposed on a surface of the second semiconductor layer adjacent to the active layer and is electrically connected to the second semiconductor layer. A method for manufacturing the light-emitting device is also provided.
A light-emitting device includes a semiconductor substrate, an epitaxial structure that has a first surface facing the semiconductor substrate and a second surface opposite to the first surface, and a transparent bonding structure that is disposed between the first surface and the semiconductor substrate. The transparent bonding structure has a first bonding surface facing the first surface of the epitaxial structure and a second bonding surface opposite to the first bonding surface, and has a slit extending from the first bonding surface toward the second bonding surface and terminating at a position that is a distance away from the second bonding surface. A method for manufacturing a light-emitting device is also provided.
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A light-emitting device includes: a semiconductor epitaxial stack that has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on one another in a direction from the second surface to the first surface; a light-transmissive dielectric layer that is disposed on the second surface and that has through holes; an ohmic contact layer that is formed in the through holes and that is in contact with the first semiconductor layer; an adhesion layer that is disposed on the light-transmissive dielectric layer opposite to the semiconductor epitaxial stack; a metal reflection layer that is disposed on the adhesion layer opposite to the semiconductor epitaxial stack; and a diffusion barrier layer that is disposed between the ohmic contact layer and the adhesion layer. A light-emitting apparatus and a method for manufacturing the light-emitting device are also provided.
Disclosed in the present invention is a nitride light-emitting diode. The nitride light-emitting diode comprises a semiconductor epitaxial stack; the semiconductor epitaxial stack at least comprises an N-type nitride layer, a V-pit initiation layer, a stress modulation layer, a light-emitting layer, and a p-type nitride layer which are arranged in sequence; the light-emitting layer is formed by alternately stacking barrier layers and well layers; the band gap energy of the well layers is lower than that of the barrier layers; the semiconductor epitaxial stack further comprises V-pits; the In component of the stress modulation layer is higher than the In component of the V-pit initiation layer; the opening width of the V-pits at the last barrier layer is greater than 260 nm; and the C doping concentration of the V-pit initiation layer is not lower than 7E16/cm3. According to the light-emitting diode in the present invention, the photoelectric characteristics of the light-emitting diode can be improved, and the luminous efficiency of the light-emitting diode can be effectively improved.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A light-emitting device includes a semiconductor epitaxial structure that has a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first mesa side wall that is defined by a side wall of the first conductive semiconductor layer and a side wall of the active layer, and a first mesa surface that is defined by a portion of a top surface of the second conductive semiconductor layer. The first mesa side wall has a side wall bottom end connected to the first mesa surface to form a connection portion, which is constituted of the side wall bottom end and a mesa surface proximal region of the first mesa surface that adjoins the side wall bottom end and is roughened. A method for manufacturing the light-emitting device is also disclosed.
A solar cell device includes a supporting substrate, and an epitaxial active structure that is disposed on the supporting substrate. The epitaxial active structure has a bottom surface adjacent to the supporting substrate and a top surface opposite to the bottom surface, and is formed with an isolation section that extends from the top surface to the bottom surface. A method for producing the solar cell device is also disclosed.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0725 - Multiple junction or tandem solar cells
Provided are a light emitting diode, a light emitting diode package, and a plant lighting device. The light emitting diode comprises: a semiconductor epitaxial laminated layer having a first surface and a second surface opposite to each other, and comprising a first conductive type semiconductor layer (108), an active layer (107) and a second conductive type semiconductor layer (106), wherein the first surface is a light emitting surface; a reflecting layer (102) arranged on one side, in the opposite direction, of the light emitting surface of the semiconductor epitaxial laminated layer and used for reflecting the light radiated by the active layer; and a light-transmitting dielectric layer structure (103) at least partially arranged between the reflecting layer and the semiconductor epitaxial laminated layer, the light-transmitting dielectric layer structure having different refractive indexes at different positions in the stacking direction of the semiconductor epitaxial laminated layer. By means of a total reflection structure formed by the light-transmitting dielectric layer structure and the reflecting layer, the light extraction efficiency of the light emitting diode can be increased, and the light emitting brightness of the light emitting diode is improved.
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A light-emitting device includes a semiconductor structure, a through hole, an electrical connecting structure, and a first electrode metal layer. The semiconductor structure has a first surface and a second surface, and includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer. The first surface is located on the first-type semiconductor layer, and the second surface is located on the second-type semiconductor layer. The through hole passes through the first-type semiconductor layer, the second-type semiconductor layer, and the active layer. The through hole has a first section, and the first-type semiconductor layer is exposed through the first section to electrically connect with the electrical connecting structure. A first angle between a side wall of the first type semiconductor layer that bounds the first section and the plane of the first surface ranges from 0° to 90°.
A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.
The present invention relates to the technical field of semiconductors, in particular to a light emitting diode and a light emitting device. In the light emitting diode provided by the present invention, for a first mesa comprising an active layer, by defining that a perimeter-to-area ratio γ under the same area satisfies (I), under a same active layer light emitting area, an exposed portion on the side of the first mesa is less, and thus the problem of light absorption and nonradiative recombination caused by a side wall defect in a small-current light emitting diode is reduced. In addition, a non-planar light emitting surface can improve the light emitting probability of the side wall of the light emitting diode, and the external light emitting efficiency of the light emitting diode is further improved.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
A light-emitting device includes a semiconductor structure having a first semiconductor layer, an active layer, and a second semiconductor layer. The second semiconductor layer and the active layer formed on a top surface of the first semiconductor layer exposes a portion of the top surface. A first strip electrode is connected to the exposed top surface. A second strip electrode is connected to the second semiconductor layer. When first and second electrodes are projected on a plane, two parallel lines, that contact two opposite ends of the first electrode and perpendicularly intersect a straight line connecting between two opposite ends of the second electrode, define on the straight line a length, which does not extend beyond a distance between the two opposite ends of the second electrode.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
53.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE PACKAGE STRUCTURE INCLUDING THE SAME
A light-emitting element includes a semiconductor epitaxial structure, a passivation layer, a first electrode, a second electrode, and a mechanical buffer layer. The semiconductor epitaxial structure includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer opposite to the first semiconductor layer. The passivation layer is disposed on the semiconductor epitaxial structure. The first electrode is disposed on the passivation layer, and extends through the passivation layer to be electrically connected to the first semiconductor layer. The second electrode is disposed on the passivation layer, and extends through the passivation layer to be electrically connected to the second semiconductor layer. The mechanical buffer layer is disposed between the passivation layer and the second semiconductor layer. A light-emitting diode package structure including at least one the light-emitting element is also disclosed.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
54.
LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME
A light-emitting device includes a first type semiconductor layer, an active layer, a second type semiconductor layer disposed adjacent to the active layer and opposite the first type semiconductor layer, and including a current spreading layer that has a recess, an insulation layer filling the recess and protruding from a surface of the current spreading layer that faces in a direction away from the active layer, and a contact layer disposed on the surface of the current spreading layer which lacks said insulation layer. A sum of a depth of the recess and a thickness of the contact layer is not less than a thickness of the insulation layer. A method for producing the light-emitting device is also disclosed.
Disclosed in the present invention are a micro-light emitting diode, a manufacturing method and a display panel. The micro-light emitting diode comprises a semiconductor epitaxial laminated layer which comprises a first-type semiconductor layer, a second-type semiconductor layer and an active layer therebetween; and a first electrode and a second electrode which are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively, wherein the second-type semiconductor layer comprises an n-type gallium phosphide window layer, and the n-type gallium phosphide window layer has a current spreading function. The present invention can solve the problem of low light-emitting efficiency of a micro-light emitting diode under small current density, and improve the light-emitting efficiency of the micro-light emitting diode under small current density.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
56.
SEMICONDUCTOR LIGHT-EMITTING COMPONENT AND LIGHT-EMITTING DEVICE
A semiconductor light-emitting component includes a semiconductor epitaxial structure that includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first conductivity type semiconductor layer includes a first current spread layer having a first and second parts which are stacked on one another. The first part has an average band gap greater than that of the second part. The second part is formed by alternately stacking first sub layers and second sub layers one on another. Each of the first sub layers has a band gap different from that of each of the second sub layers. A light-emitting device including the semiconductor light-emitting component is also disclosed.
Disclosed in the present invention are a light-emitting diode and a manufacturing method. The light-emitting diode comprises: a substrate, having a first surface and a second surface that are opposite to each other; a semiconductor epitaxial laminated layer, comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer that are laminated on the first surface of the substrate; and a side wall, formed at the edge of the semiconductor epitaxial laminated layer, the side wall having a roughened structure, and the roughened structure comprising a protrusion. The light-emitting diode is characterized in further comprising an etching stop layer, located on the upper surface of the semiconductor epitaxial laminated layer away from the substrate. The etching stop layer is capable of preventing the upper surface of the semiconductor epitaxial laminated layer from being etched by an etching solution in a side wall roughening process, improving the appearance yield of a semiconductor light-emitting diode, and improving the photoelectric properties of the light-emitting diode.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
Disclosed in the present invention is a light emitting diode, comprising: a semiconductor epitaxial lamination layer which comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and is provided with a first surface and a second surface which are opposite to each other; a light-transmitting dielectric layer which is located at the second surface side of the semiconductor epitaxial lamination layer, and is provided with a plurality of openings running through the light-transmitting dielectric layer to form a plurality of through holes; an ohmic contact layer which fills the through holes of the light-transmitting dielectric layer; an adhesion layer which is located at the side of the light-transmitting dielectric layer away from the semiconductor epitaxial lamination layer; and a metal reflecting layer which is located at the side of the adhesion layer away from the semiconductor epitaxial lamination layer. The light emitting diode is characterized in that a metal diffusion prevention layer is provided between the ohmic contact layer and the adhesion layer, metal in the ohmic contact layer can be prevented from diffusing towards the adhesion layer, the voltage of the light emitting diode is prevented from rising, the ohmic contact layer fills the through holes of the light-transmitting dielectric layer, holes of a bonding layer can be prevented from being generated, and the wire bonding yield of the light emitting diode is improved.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
A light-emitting device includes a light-emitting laminating structure having an ohmic contact layer, a transition layer, a current-spreading layer, a first type semiconductor layer, an active layer, and a second type semiconductor layer. The current-spreading layer has aluminum, and, in the current-spreading layer, a relative content of the aluminum with respect to a composition of the current-spreading layer is fixed. The transition layer has aluminum, and, in the transition layer, a relative content of the aluminum with respect to a composition of the transition layer is less than the relative content of the aluminum in the current-spreading layer. A method for producing the light-emitting device is also disclosed.
Disclosed in the present invention are a semiconductor light-emitting element and a method for manufacturing same. The semiconductor light-emitting element comprises: a semiconductor epitaxial stack layer that comprises a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; a side wall that is formed on the edge of the first-conductivity-type semiconductor layer and the edge of the active layer; and a first step surface that is formed in the region, that does not overlap the active layer, of the second-conductivity-type semiconductor layer. The semiconductor light-emitting element is characterized in that the side wall extends and is connected to the first step surface to form a connection portion, and the side of the connection portion located on the first step surface has a roughening structure. According to the semiconductor light-emitting element and the method for manufacturing same disclosed in the present invention, the roughening structure is provided on the upper surface of the first-conductivity-type semiconductor layer and the upper surface of the first step surface, so that the problem of electric leakage caused by roughening the side wall can be solved, and the luminous brightness of the semiconductor light-emitting element is improved.
1−X3As second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Disclosed is a semiconductor light-emitting element, which includes a semiconductor epitaxial stack layer, same having a first surface and an opposing second surface, and same including a semiconductor layer of a first conductivity type, a semiconductor layer of a second conductivity type, and an active layer between said semiconductor layers; a through hole, which at least passes through the semiconductor layer of the first conductivity type, the semiconductor layer of the second conductivity type, and the active layer; an electrical connection structure, which is arranged within the through hole, extends onto a first surface of the semiconductor layer of the first conductivity type, and forms an electrical connection with the semiconductor layer of the first conductivity type; and a first electrode metal layer, which is arranged on the second surface of the semiconductor epitaxial stack layer, and which is connected to the electrical connection structure; said invention is characterized in that: at least one through hole segment exposes the semiconductor layer of the first conductivity type, and the included angle of a side wall of a first through hole segment and the first surface is θ1, where 0° < θ1 ≤ 90°. The present invention can improve current spreading uniformity, and can improve the light emission efficiency and the uniformity of the brightness of emitted light of the semiconductor light-emitting element.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
Provided is a semiconductor light-emitting element, comprising: a semiconductor epitaxial stack, which has a first surface and a second surface opposite to the first surface, and which comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer located between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode and a second electrode, which are located on the first surface of the semiconductor epitaxial stack and are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively; and an insulating layer, which is located between the first electrode and the semiconductor epitaxial stack and between the second electrode and the semiconductor epitaxial stack. The semiconductor light-emitting element is characterized in further comprising an anti-ejector-pin buffer layer which is located between the insulating layer and the second conductive type semiconductor layer. According to the present invention, the design of the anti-ejector-pin buffer layer is achieved, which can prevent the ejection of an ejector pin from damaging the semiconductor light-emitting element during a packaging process, effectively protect the semiconductor light-emitting element, and increase the product yield of the semiconductor light-emitting element.
1-Y1P, wherein 0≤X3≤1 and 0≤Y1≤1. The first cladding layer is disposed on the first waveguide layer opposite to the active layer. The second cladding layer is disposed on the second waveguide layer opposite to the active layer.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
11222 or odd times thereof. The present invention can improve the DBR reflectivity, improve the light-emitting brightness of the inverted light-emitting diode, and can also improve the process stability.
X11-X1X21-X2Y1-YX31-X3Y1-YX21-X2X31-X31-X3As second graded layer can be added to effectively improve the quality of an interface and crystal growth, achieve effective switching between As and P, and reduce series resistance and operating voltage, thereby improving the efficiency of photoelectric conversion.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
A semiconductor light-emitting element, comprising a semiconductor barrier transistor stacked layer, which comprises a first conductive-type semiconductor layer (106, 206), a second conductive-type semiconductor layer (108, 208), and an active layer (107, 207) located between the first conductive-type semiconductor layer (106, 206) and the second conductive-type semiconductor layer (108, 208); a dielectric layer (105, 205) located on the side of the first conductive-type semiconductor layer (106, 206) away from the active layer (107, 207), wherein the dielectric layer (105, 205) is provided with a plurality of through openings; and a metal layer located on the side of the dielectric layer (105, 205) away from the first conductive-type semiconductor layer (106, 206), wherein the metal layer is electrically connected to the first conductive-type semiconductor layer (106, 206) by means of the plurality of openings of the dielectric layer (105, 205); and the plurality of through openings of the dielectric layer (105, 205) are ring-shaped. The dielectric layer (105, 205) uses a design of ring-shaped openings, such that the effect of mirror reflection can also be taken into consideration on the basis of guaranteeing current conduction and injection, thereby improving the light-emitting brightness of the semiconductor light-emitting element, and improving the light-emitting efficiency thereof.
A light-emitting element, comprising a semiconductor light-emitting sequence stack layer having a first side and a second side opposite to each other, the semiconductor light-emitting sequence stack layer comprising, from the first side to the second side, multiple layers in the following stacking order: an ohmic contact layer, a current spreading layer, a first covering layer, a light-emitting layer, and a second covering layer; and the semiconductor light-emitting sequence stack layer further comprising: an aluminum relative content transition layer located between the ohmic contact layer and the aluminum-containing current spreading layer, the current spreading layer containing aluminum, and the aluminum relative content being unchanged; the aluminum relative content of the aluminum relative content transition layer being lower than the aluminum relative content of the current spreading layer.
A method for manufacturing a semiconductor light-emitting element, comprising: acquiring a semiconductor sequence layer, comprising a first conduction type semiconductor layer, a light-emitting layer, a second conduction type semiconductor layer, and a third semiconductor layer, the third semiconductor layer serving as a first sacrificial layer on one side of the second conduction type semiconductor layer; etching the first sacrificial layer to form a plurality of openings; manufacturing ohmic contact blocks in the openings; manufacturing a second sacrificial block above each ohmic contact block; etching off the first sacrificial layer; manufacturing a fluoride insulating layer covering the second type conduction semiconductor layer and the second sacrificial blocks; and removing the plurality of second sacrificial blocks to form a fluoride insulating layer and a plurality of ohmic contact blocks covering the side of the second type conduction semiconductor layer. Using the third semiconductor layer as the first sacrificial layer in combination with using an insulating layer manufactured by CVD for the second sacrificial blocks can effectively control the size of the wide-top and narrow-bottom sacrificial blocks within a reasonable range, in order to obtain a fluoride insulating layer with uniform openings and a flat fluoride insulating layer.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
73.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE
A semiconductor light-emitting element, comprising a semiconductor light-emitting sequence, the semiconductor light-emitting sequence comprising a first conductivity-type semiconductor layer, a light-emitting layer and a second conductivity-type semiconductor layer. An electrical insulation layer covers a partial region on one side of the second conductivity-type semiconductor layer to form an electrical insulation region, an uncovered partial region on one side of the second conductivity-type semiconductor layer is an electrical contact region, and the second conductivity-type semiconductor layer comprises a fluorine-containing region. The electrical insulation layer is made of a fluoride, fluorine ions of the fluoride enter the second conductivity-type semiconductor layer by means of high-temperature diffusion to form the fluorine-containing region, the fluorine-containing region is formed at least in the second conductivity-type semiconductor layer below a main pad electrode of a first electrode, being able to improve the local sheet resistance, improving the current diffusion in the second conductivity-type semiconductor layer below the main pad electrode of the first electrode, facilitating the lateral diffusion of a current to surrounding areas away from the main pad electrode of the first electrode, thereby improving the uniform dispersion of light.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A light-emitting diode component, which comprises a semiconductor sequence, one side of the semiconductor sequence being a light exiting surface, the other side comprising a semiconductor current spreading layer, the semiconductor sequence comprising a first electrically-conductive semiconductor layer, an active layer, and a second electrically-conductive semiconductor layer, and characterized in that: the current spreading layer is a doped electrically-conductive semiconductor layer, a part of the side of the current spreading layer away from the light exiting surface is provided with a recess, a transparent insulating layer is provided in the recess, and a reflective layer is provided on the other side of the transparent insulating layer and on the non-recessed part of the current spreading layer. With the part of the current spreading layer being provided with the recess, the transparent insulating layer filled in the recess, and the reflective layer provided on the transparent insulating layer and on the non-recessed part of the current spreading layer, the adverse effect of a light radiated by the semiconductor sequence being absorbed when passing through the current spreading layer formed by doping is reduced, and luminous efficiency is increased.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Provided is a semiconductor luminous element, comprising a bonding substrate. The bonding substrate of the semiconductor luminous element comprises a first surface, a second surface, a plurality of metal layers on the first surface, and semiconductor luminous sequences on the plurality of metal layers, wherein a step structure is formed at the edge of the bonding substrate, such that an edge part of the first surface of the bonding substrate is not covered.
Provided in the present solution is an LED chip structure, which comprises a carrier and a semi-conductor layer sequence on the carrier; a reflective layer sequence is configured between the carrier and the semi-conductor layer sequence, the reflective layer sequence having an anti-reflective film layer that faces the semi-conductor layer sequence and a metal mirror surface layer that is far from the semi-conductor layer sequence; a semi-conductor sequence comprises a first conductive semiconductor layer, a light-emitting layer and a second conductive semiconductor layer, and is characterized in that: at least a partial region of the boundary between the semi-conductor sequence and an anti-reflective film is a roughened surface or a patterned surface, while the boundary between the anti-reflective film layer and the metal mirror surface layer is a smooth surface, the smooth surface being capable of effectively improving the light-emission rate of a side surface.
A flexible thin film solar cell and a manufacturing method therefor. The flexible thin film solar cell comprises a flexible thin film substrate, an epitaxial layer structure on the flexible thin film substrate, a lower electrode located between the epitaxial layer structure and the flexible thin film substrate, and an upper electrode located on the epitaxial layer, and further comprises a through hole on the epitaxial structure, a through electrode connected to the lower electrode by means of the through hole, and an insulating layer structure at least covering the sidewall of the through hole and located between the through electrode and the upper surface of the epitaxial structure. The insulating layer structure enables the through electrode to be insulated from the epitaxial layer, and the through electrode and the upper electrode comprise pad structures located at the same side of the epitaxial layer.
A solar cell, comprising: an optical layer located on a battery chip, and a transparent packaging material located on the optical layer. The optical layer is made as a three-layer structure, wherein the refractive indexes of a first optical layer and a third optical layer are both higher than the refractive index of a second optical layer in the middle.
A light-emitting diode and a manufacturing method therefor. The manufacturing method comprises the steps of: (1) providing a substrate (100), an epitaxial structure being formed on the substrate (100), the epitaxial structure comprising a first semiconductor layer (111), an AlGaInP active layer (112), a second semiconductor layer (113), and a third semiconductor layer (114), the third semiconductor layer (114) being made of AlGaAs and having a thickness of 30 μm or more; (2) making a first electrode (121) and a second electrode (122) on the side surface of the epitaxial structure distant from the substrate (100), wherein the first electrode (121) is electrically connected to the first semiconductor layer (111) and the second electrode (122) is electrically connected to the second semiconductor layer (113); and removing the substrate (100), wherein the third semiconductor layer (114) supports the epitaxial stack to ensure the physical stability thereof.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
80.
LIGHT-EMITTING DIODE FOR EMITTING GREEN-YELLOW LIGHT
Disclosed is a light-emitting diode for emitting green-yellow light, comprising a first-type semiconductor layer, an active layer and a second-type semiconductor layer, characterized in that: the active layer sequentially includes a first quantum well, a second quantum well, a strain compensation layer, and a third quantum well, wherein the first quantum well is constructed as a strain-free quantum well, and the second and third quantum wells are strained quantum wells. In the present invention, a strain-free quantum well and a large-strain quantum well are combined, and a strain compensation measure is used to prevent lattice relaxation, reducing the component of Al so that a device is more reliable, and also improving the limiting effect of a quantum well on a carrier and thus improving the internal quantum efficiency.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
81.
LIGHT EMITTING DIODE AND PREPARATION METHOD THEREFOR
Provided are a light emitting diode and preparation method therefor, the structure of the light emitting diode comprising a first type nitride region (4), a light emitting region (5) and a second type nitride region (7); the first type nitride region (4) is composed of a plurality of first nitride layers (A1-An) and second nitride layers (B1-Bn), and the second type nitride region (7) is composed of a plurality of third nitride layers (C1-Cn) and fourth nitride layers (D1-Dn); the second nitride layer and the fourth nitride layer respectively have a high-doping emitting point corresponding to the first nitride layer and the third nitride layer; the numbers of the distributed second nitride layers and fourth nitride layers as well as the density and depth of emitting points are adjusted, such that lateral expansion of carriers is more extensive, current distribution is more uniform, and LED performance is improved.
Disclosed are a flip four-junction solar cell structure and a preparation method therefor. Firstly, a GaInP sub-cell and a GaAs sub-cell are formed on a GaAs substrate in sequence by means of MOCVD or an MBE, and then a SiGeSn sub-cell and a SiGe sub-cell are grown by means of UHVCVD. This cell structure has good current matching and lattice matching, and can achieve a high crystalline quality and cell efficiency.
Disclosed are a light-emitting diode and a manufacturing method therefor. The structure thereof comprises: a light-emitting epitaxial lamination layer comprising a first-type semiconductor layer (221), an active layer (122) and a second-type semiconductor layer (222), and having a first surface and a second surface opposite to each other, wherein the first surface is a light-exiting surface; a conductive layer (240) formed on the second surface of the light-emitting epitaxial lamination layer and comprising a physical coating layer (241) and a chemical coating layer (243), wherein the physical coating layer (241) is adjacent to the light-emitting epitaxial lamination layer and has a split (242), and the chemical coating layer (243) fills the split (242) in the physical coating layer (241); and a substrate (260) connected to the light-emitting epitaxial lamination layer by means of the conductive layer (240). The conductive layer (240) is formed using a method of combining vacuum evaporation and chemical coating, so that metal is filled in a gap generated during the process of vacuum evaporation, thereby increasing a current conduction area, reducing the voltage, and improving the ESD performance.
The present invention provides a light-emitting diode and method for manufacturing same; selective growth is used to form a segmented quantum well, and a photon reabsorption effect in the quantum well in the LED is prevented, increasing the external extraction efficiency and increasing brightness. The light-emitting diode comprises a light-emitting diode, comprising in sequence a first semiconductor layer, an active layer, and a second semiconductor layer; the upper surface of said first semiconductor layer at least is divided into a first growth region and a second growth region; by means of selective epitaxial growth, said active layer is formed in said first growth region; by means of epitaxial growth, said second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
85.
METHOD FOR PREPARING VERTICAL LIGHT-EMITTING DIODE
Provided is a method for preparing a vertical light-emitting diode. The method is mainly applied to an infrared light-emitting diode. By heating a cavity in a growth process of a reflecting layer, prediffusion of metal molecules of the reflecting layer in an epitaxial layer, so as to alleviate the diffusion of the metal molecules of the reflecting layer towards the epitaxial layer in high-temperature fusion of the reflecting layer and the epitaxial layer, and reduce the blackening degree of a common ohmic contact hole.
A light-emitting diode epitaxial wafer structure and preparation method thereof, comprising from bottom to top: a substrate (1), a buffer layer (2), an undoped gallium nitride layer (3), an N-type region (4), a multiple quantum well active region (5), an electron blocking layer (6), a P-type region (7), and a P-type contact layer (8). The invention is characterized in that: it utilizes NGaN (A1-An)/N-UGaN (B1-Bn-1) and PGaN (D1-Dn)/P-UGaN (E1-En-1) superlattice structures to form, respectively, the N-type region (4) and the P-type region (7); between the NGaN (A1-An) and N-UGaN (B1-Bn-1) of the N-type region there is inserted an SiN layer (C1-Cn-1), and between the PGaN (D1-Dn) and P-UGaN (E1-En-1) of the P-type region there is inserted an MgN layer (F1-Fn-1). By the SiN (C1-Cn-1) and MgN (F1-Fn-1) insert layers of a certain thickness exhibiting a dislocation restoration effect, the invention possesses the capability of adding Si and Mg dopants in higher concentrations when the dislocation grades are the same; further, a thin mask layer formed of SiN and MgN has a certain capability of binding electrons and holes, which can increase the existing concentration level of a two-dimensional electron gas and improve antistatic capability.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
87.
LIGHT-EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
Provided are a light-emitting diode chip and a manufacturing method therefor. An electrical connection layer (12) is provided on an out-light face of a light-emitting epitaxial layer, which can be separated by a dielectric material (13) and thus be disconnected. After the surface has been subjected to CMP processing, a transparent electric current extension layer (11) is plated on the extremely planar surface, thereby reducing the transverse conduction resistance of the transparent electric current extension layer and performing transverse conduction in the place of a metal extension strip.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
88.
LIGHT-EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
A light-emitting diode chip, containing: a first type of semiconductor layer (131), a second semiconductor layer (133) and an active layer (132) sandwiched between the two; a dielectric layer (122) located at a lower surface of a light-emitting epitaxial laminated layer and provided with an array of conductive through holes (123); a metallic conductive layer (121) located at a lower surface of the dielectric layer (122), fills the conductive through holes (123) and forms an ohmic contact with the light-emitting epitaxial laminated layer; a conductive substrate (150) located at a lower surface of the metallic conductive layer (121) and used for supporting the light-emitting epitaxial laminated layer; and a first electrode (141) located at an upper surface of the light-emitting epitaxial laminated layer and comprising a solder pad electrode (141a) and a finger electrode (141b). There is a rotation angle between the array of conductive through holes (123) and the finger electrode (141b), and the selection of the rotation angle enables a preferred number of conductive through holes (123) not to be shielded by the solder pad electrode (141a) and the finger electrode (141b). Also provided is a method for manufacturing the light-emitting diode chip.
A bonding structure (220) for III-V compound device and a light emitting diode (LED) using the bonding structure. The bonding structure comprises a first metal adhesive layer (221) and a second metal adhesive layer (222), characterized in that a nano heat conducting film is implanted in the second metal adhesive layer, the nano heat conducting film being completely wrapped by the second metal adhesive layer, and the heat conductivity coefficient of the nano heat conducting film being greater than that of the second metal adhesive layer, so as to achieve rapid heat dissipation during low-temperature bonding.
Provided is a light-emitting diode, comprising: an n-type restricted layer (100), a p-type restricted layer (300), and an active layer (200) sandwiched between same, characterized in that: said active layer (200) contains a quantum well structure (220) and a double heterostructure (210); the double heterostructure (210) is adjacent to the n-type restricted layer (100), and the quantum well structure (220) is adjacent to the p-type restricted layer (300), so as to reduce carrier overflow under high-current conditions and improve color purity in light emission.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
91.
LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
Provided are a light-emitting diode and a manufacturing method therefor. The light-emitting diode comprises: an epitaxial lamination layer, successively containing an n-type ohmic contact layer (241), a first n-type conversion layer (242), an n-type etching stop layer (243), a second n-type conversion layer (244), an n-type limiting layer (245), an active layer (246), a p-type limiting layer (247), a p-type conversion layer (248) and a p-type window layer (249) from bottom to top; a p-electrode (151) located above an upper surface of the p-type window layer (249); a metal bonding layer (220) located above a lower surface of the n-type ohmic contact layer (241), wherein a portion corresponding to the position of the p-electrode (151) extends upward through the n-type ohmic contact layer (241) and the first n-type conversion layer (242) to the n-type etching stop layer (243), so as to form a current adjustment distribution structure (260), so that a current does not flow into the epitaxial lamination layer right underneath the p-electrode (151) when the current is injected; and a conductive substrate (210) located above a lower surface of the metal bonding layer (220).
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
92.
INVERSELY-MOUNTED MULTIJUNCTION SOLAR CELL CHIP INTEGRATED WITH BYPASS DIODE, AND PREPARATION METHOD THEREFOR
Provided are an inversely-mounted multijunction solar cell chip integrated with a bypass diode, and a preparation method therefor. The chip comprises from top to bottom: a glass cover sheet (015), a transparent bonding layer (014), a front electrode (012), an n/p photoelectric conversion layer (002), a p/n tunneling junction (003), an n/p bypass diode structure layer (004, 005), a first back electrode (006), and a second back electrode (007). The p-type layer (005) of the n/p bypass diode structure layer (004, 005) is partially etched and part of an n-type layer (004) are exposed. The first back electrode (006) covers but does not exceed the bypass diode p-type layer (005). The second back electrode (007) covers but does not exceed the exposed bypass diode n-type layer (005). The solar cell chip comprises at least one through hole (010). The through hole (010) penetrates through the n/p photoelectric conversion layer (002), the p/n tunneling junction (003) and the n/p bypass diode structure layer (004, 005). An electric insulation layer is deposited on the inner wall of the through hole. The through hole is filled with metal to connect the front electrode (012) and the first back electrode (006). In the solution, the effective light accepting area of the cell chip is not occupied; a substrate-free ultrathin cell is achieved; heat dissipation of the cell is greatly improved; and due to the quite light weight, the solar cell chip has outstanding advantages in space power supply application.
H01L 21/82 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
93.
FLIP MULTI-JUNCTION SOLAR CELL AND PREPARATION METHOD THEREOF
A flip multi-junction solar cell and a preparation method thereof, the method includes steps: (1) providing a growth substrate for epitaxy growth of a semiconductor material; (2) putting the growth substrate into an MOCVD equipment, and flip growing a first epitaxy structure, which includes a multi-junction sub-cell laminated layer, over the substrate using an MOCVD method; (3) transferring the grown structure into an MBE equipment, flip growing a second epitaxy structure, which includes at least one junction sub-cell, on the grown structure using an MBE method, and forming a flip multi-junction solar cell in series; the band gap of the first epitaxy structure is greater than the band gap of the second epitaxy structure.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
94.
LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
Provided are a light emitting diode and a manufacturing method therefor，improving the external light extraction efficiency of the light emitting diode effectively. The light emitting diode comprises a luminous epitaxial stack (150), wherein the luminous epitaxial stack (150) is provided with a first surface and a second surface oppositely, and comprises an n-type semiconductor layer (151), a luminous layer (152) and a p-type semiconductor layer (153); the light transmitting dielectric layer (140) is positioned on the second surface of the luminous epitaxial stack (150) in which conductive through holes (142) are formed; the light transmitting conductive layer (130) is positioned on the lateral surface, far away from the luminous epitaxial stack (150), of the light transmitting dielectric layer (140); the metal reflective layer (120) is positioned on the lateral surface, far away from the light transmitting dielectric layer (140), of the light transmitting conductive layer (130); the refractive index of the light transmitting dielectric layer (140) is lower than both of the luminous epitaxial stack (150) and the light transmitting conductive layer (130), the luminous epitaxial stack (150), the light emitting dielectric layer (140) and the light transmitting conductive layer (130) form an enhanced reflection system.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
95.
POLY-COMPOUND SEMICONDUCTOR LIGHT-EMITTING COMPONENT WITH DOPED MULTILAYER QUANTUM WELLS
Provided is a poly-compound semiconductor high-efficiency light-emitting component with doped multilayer quantum wells, comprising an active region (100), the active region (100) comprising a poly-compound semiconductor structure with doped multilayer quantum wells, the poly-compound semiconductor structure with multilayer quantum wells having at least one quantum well layer, all or some barrier layers (150) being doped, and well layers (140) not being doped, and the poly-compound being aluminium gallium indium phosphide. Thus, with a large-sized chip, the brightness output is better, and the voltage is also relatively low. Under a high environmental temperature or high-temperature state, wavelength red shift and brightness decay caused by the materials themselves are both reduced.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
1-xN (0≦x≦1) layer and a P-type layer; and during later chip fabrication, dividing the epitaxial wafer over the etched N-type platform into chip grains and immersing them in chemical solutions for wet etching; and forming an inverted pyramid structure with rough side wall over the multiple quantum-well layer to improve light-emitting efficiency.
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
97.
Four-junction quaternary compound solar cell and method thereof
A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell (100) with a first band gap, a lattice constant matching with the substrate on an InP grown substrate, forming a second subcell (200) with a second band gap bigger than the first band gap, a lattice constant matching with the substrate on the first subcell, forming a graded buffer layer (600) with a third band gap bigger than the second band gap on the second subcell, forming a third subcell (300) with a fourth band gap bigger than the third band gap, a lattice constant smaller than the substrate on the graded buffer layer, forming a fourth subcell (400) with a fifth band gap bigger than the fourth band gap, a lattice constant matching with the third subcell on the third subcell, and then forming the required four-junction solar cell then by succeeding process including removing the grown substrate, bonding a support substrate, forming electrodes, evaporating an anti-reflect film and so on.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
A high-concentration solar cell includes an epitaxial layer structure, an upper patterned electrode on the top surface, and a back electrode on the back surface. The upper patterned electrode includes a primary pattern and a secondary pattern, where the primary pattern is composed of a series of small metal isosceles trapezoids around the perimeter of the cell. The narrower base of each metal trapezoid points toward an interior of the cell. A lead soldering pad is located within each metal trapezoid for being soldered to an external conductor for carrying the solar cell current. The secondary pattern consists of thin spaced conductors that connect to the angled sides and base of each trapezoid and spread current across the top surface of the cell. The current along the angled sides of each trapezoid is well-distributed to all the spaced conductors connected to the angled sides to avoid current crowding.
patents
