An oscillating device includes a first quartz crystal resonator, a driving circuit, a first buffer, a bandpass filter, a second quartz crystal resonator, and a second buffer coupled to each other. The driving circuit drives the first quartz crystal resonator to generate a first oscillating signal with a resonant frequency. The first buffer isolates from a load variation to generate a first clock signal in response to the first oscillating signal. The bandpass filter allows only the first clock signal with the harmonic frequency of the resonant frequency within a passband to pass through, thereby generating a filtered signal. The second quartz crystal resonator rectifies the filtered signal to generate a second oscillating signal having the harmonic frequency. The second buffer isolates from a load variation to generate a second clock signal in response to the second oscillating signal.
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H03B 5/04 - Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
2.
Processing method of single-crystal quartz material
A processing method of single-crystal quartz material includes the following steps. Determining an area to be processed where twin crystals are prone to occur on the single-crystal quartz material. Using a heater to heat an area to be processed on the single-crystal quartz material, so that processing difficulty of the area to be processed is reduced. Using a laser to process the single-crystal quartz material in a heated portion of the area to be processed.
A processing method of a single-crystal quartz material includes the following steps. An area to be processed in which the single-crystal quartz material readily generates twin crystals is determined. The area to be processed on the single-crystal quartz material is modified using a modifier, so that a processing difficulty of the area to be processed is reduced. The single-crystal quartz material of the modified area to be processed is processed using a processor.
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A sensing device includes a quartz substrate, a first electrode, and a second electrode. The first electrode and the second electrode are respectively disposed on two opposite surfaces of the quartz substrate. The first electrode includes a first gold metal layer, a first chromium metal layer, and a first chromium oxide layer. The first gold metal layer is disposed on a surface of the quartz substrate. The first chromium metal layer is disposed between the first gold metal layer and the quartz substrate. The first chromium oxide layer is disposed between the first chromium metal layer and the first gold metal layer. A thickness of the first chromium oxide layer is greater than or equal to 1 nanometer and less than or equal to 10 nanometers.
A quartz resonator including a casing, a pad, an oscillator crystal and a thermistor is provided. The casing includes a first casing and a second casing. The pad is disposed on an outer surface of the second casing. The oscillator crystal includes two thick parts and a thin part whose two ends are respectively connected to the two thick parts. The two thick parts are sandwiched between the first casing and the second casing. An inner surface of the first casing and the thin part of the oscillator crystal form a sealed first space, and an inner surface of the second casing and the thin part of the oscillator crystal form a sealed second space. The thermistor is disposed in the first space or the second space and is electrically connected to the pad.
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
G01K 7/22 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
A crystal oscillation chip including a casing and a crystal oscillation piece is provided. The crystal oscillation piece is disposed in the casing. The crystal oscillation piece includes a flat substrate, two electrodes and two conductive silver glues, the two electrodes are respectively disposed on two opposite main surfaces of the flat substrate. The flat substrate includes at least one notch. The notch is disposed at a side surface of the flat substrate and is recessed along a direction vertical from the side surface and toward an interior of the flat substrate. A height of the notch is the same as a thickness of the flat substrate, and two conductive silver glues connect the flat substrate and the casing.
A resonator device includes a crystal chip, two metal electrodes, and two groove portions. The crystal chip has a first surface and a second surface opposite to each other, and includes a first area, a second area and a third area. The second area surrounds the first area, and the third area surrounds the second area. The second area is located between the first area and the third area. The two metal electrodes are respectively disposed on the first surface and the second surface. The metal electrode includes a first electrode portion, a connecting portion, and a second electrode portion. The first electrode portion is disposed in the first area. The connecting portion is disposed in the second area. The second electrode portion is disposed in the third area. The connecting portion connects the first electrode portion and the second electrode portion, and the second electrode portion extends to an edge of the crystal chip. The two groove portions are respectively disposed on the first surface and the second surface and are disposed in the second area. A depth of each of the groove portions is equal to a thickness of each of the metal electrodes.
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
8.
Quartz oscillator and manufacturing method thereof
A quartz oscillator including a first plate, a second plate, and a quartz sheet is provided. The quartz sheet has an oscillation zone. The quartz sheet is disposed between the first plate and the second plate. The quartz oscillator has a first outer surface, a side surface, and a first connection surface. The first outer surface is located on the first plate. The first connection surface is located between the first outer surface and the side surface. The first outer surface, the side surface, and the first connection surface are not parallel to each other. A manufacturing method of a quartz oscillator is also provided.
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H10N 30/03 - Assembling devices that include piezoelectric or electrostrictive parts
Disclosed is a quartz oscillation device including a quartz sheet, a first conductive layer and a second conductive layer. The first conductive layer is disposed on the first surface of the quartz sheet. The second conductive layer is disposed on the second surface of the quartz sheet. The quartz sheet has a groove or an opening penetrating therethrough. An included angle between a side wall of the groove or the opening and the first surface or the second surface is 60° to 90°.
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Disclosed is a quartz oscillator including a first cover, a second cover, and a quartz oscillation device. The quartz oscillation device is disposed between the first cover and the second cover. The quartz oscillation device includes a quartz sheet, a first conductive layer and a second conductive layer. The first conductive layer is disposed on the first surface of the quartz sheet. The second conductive layer is disposed on the second surface of the quartz sheet. The quartz sheet has a groove or an opening penetrating therethrough. An included angle between a side wall of the groove or the opening and the first surface or the second surface is 60° to 90°.
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
An oscillating device is arranged in an environment having an ambient temperature. The oscillating device includes a heater, an oscillator, and a temperature-controlled circuit. The oscillator is configured to generate a first clock signal whose frequency is temperature-dependent on the ambient temperature. The temperature-controlled circuit is directly electrically connected to the heater. The temperature-controlled circuit senses the ambient temperature to generate an input voltage that is temperature-dependent on the ambient temperature and provides the input voltage for the heater. The temperature-controlled circuit includes a MOSFET and a temperature sensing circuit. The drain of the MOSFET is directly electrically connected to the heater. The MOSFET and the heater are electrically connected between a high voltage terminal and a low voltage terminal. The temperature sensing circuit is electrically connected to the gate of the MOSFET.
An oscillator wafer-level-package structure and oscillator crystal structure having internal cut-off region thereof are provided. At least one cut-off region is formed inside the oscillator crystal structure, penetrating its upper and lower surface, such that the crystal main region and its adjacent region are separated. A bottom layer includes an upper plane. A capping layer includes a lower plane, and the oscillator crystal structure is disposed there in between, forming an upper and lower cavity with the capping layer and the bottom layer. By engaging an upper and lower seal ring surrounding the oscillator crystal structure, the oscillator crystal structure is sealed, forming the wafer-level-package structure. By designing internal cut-off region inside the oscillator crystal structure, frequency offset after encapsulation is reduced, and better device characteristics are obtained.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
An electroless plating method includes the following steps. An object to be plated is provided, wherein the object to be plated is a metal material. A cleaning process is performed on the object to be plated to remove impurities on a surface of the object to be plated. A plasma treatment process is performed on the surface of the object to be plated to ionize a metal of the surface of the object to be plated. The object to be plated after the plasma treatment process is immersed in a chemical plating solution to form a plating layer.
A resonator chip and a manufacturing method thereof are provided. The manufacturing method of the resonator chip includes the following steps. A quartz wafer is provided. The quartz wafer has a first surface and a second surface opposite to the first surface. A first etching process is performed on the quartz wafer to form multiple inverted mesa portions, and the inverted mesa portions has a first thickness. The quartz wafer is singulated to form multiple resonator chips. Each of the resonator chips includes one of the inverted mesa portions. A second etching process is performed on the resonator chips to form chamfers at edges of the resonator chips.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
H10N 30/082 - Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
A package structure includes a first layer, a second layer and a third layer. The second layer includes an outer frame, a resonator and a chip. The second layer is arranged between the first layer and the third layer. The outer frame, the first layer and the third layer are constituted a rectangular accommodation portion. The resonator and the chip are located in the rectangular accommodation portion. The chip is located at a side of the resonator, and is electrically connected to the third layer and the resonator through a plurality of conductive components on the chip. A package structure in which the chip is located below the resonator is also provided.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
A resonator including a vibration plate, a first electrode, and a second electrode is provided. The vibration plate has a first surface and a second surface opposite to the first surface. The first electrode is disposed on the first surface, and the second electrode is disposed on the second surface. At least one of the first electrode and the second electrode has a plurality of openings. The openings are pairwise distributed. Each pair of openings are symmetrically distributed with respect to a geometric center of an electrode which the openings belong to. All the openings do not contact with an edge of the electrode which the openings belong to.
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
17.
Frequency generating device and operation method thereof
A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit generates a clock signal and adjust a clock frequency of the clock signal according to a control voltage generated by the processor circuit. The processor circuit calculates a current frequency aging rate value based on a current clock frequency. The processor circuit calculates a control voltage regulation rate value based on the current frequency aging rate value and a control voltage slope, and compensates the control voltage based on the control voltage regulation rate value in the holdover state. Alternatively, the processor circuit calculates a frequency regulation value based on the current frequency aging rate value and an oscillator resolution of the synchronizer, and provides the frequency regulation value to the synchronizer in the holdover state to compensate an output frequency of the synchronizer.
H03B 5/04 - Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
G06F 1/08 - Clock generators with changeable or programmable clock frequency
G06F 1/12 - Synchronisation of different clock signals
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
18.
Frequency generating device and operation method thereof
A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit is configured to generate a clock signal and adjust a clock frequency of the clock signal according to a control voltage. The processor circuit is coupled to the oscillator circuit and is configured to generate the control voltage. The processor circuit reads a frequency aging rate value and a control voltage slope of the oscillator circuit from the oscillator circuit, calculates a control voltage regulation rate value corresponding to the frequency aging rate value and the control voltage slope, and compensates the control voltage based on the control voltage regulation rate value. Alternatively, the processor circuit reads the control voltage regulation rate value from the oscillator circuit, and compensates the control voltage based on the control voltage regulation rate value.
G06F 1/08 - Clock generators with changeable or programmable clock frequency
G06F 1/12 - Synchronisation of different clock signals
H03B 5/04 - Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
A suspended resonator including a vibration structure, a first electrode, and a second electrode is provided. The vibration structure includes a vibration region, a frame portion, and a connecting portion. The vibration region includes a plate portion and a thickening portion. The plate portion has a first surface and a second surface opposite to each other. The thickening portion surrounds a central part of the plate portion, and an edge part of the plate portion is sandwiched in the thickening portion. A thickness of the thickening portion is greater than a thickness of the plate portion. The frame portion surrounds the vibration region and maintains a gap with the vibration region. The connecting portion connects the thickening portion with the frame portion. The first electrode is disposed on the first surface. The second electrode is disposed on the second surface.
A crystal oscillator and an oscillating device are provided. The crystal oscillator includes a resonator, a low-thermal conductivity glue, an integrated circuit chip, and a heating element. In the resonator, a crystal blank is hermetically encapsulated. The low-thermal conductivity glue wraps the resonator to suppress temperature variation in the resonator. The integrated circuit chip is disposed below the resonator, and the heating element is configured to supply heat to the resonator.
H03L 1/04 - Constructional details for maintaining temperature constant
H03B 5/30 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H03L 1/02 - Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
21.
MANUFACTURING METHOD OF PIEZOELECTRIC VIBRATION ELEMENT
A manufacturing method of a piezoelectric vibration element includes at least the following steps. Quartz wafer is provided. A first metal material layer and a second metal material layer are fully formed on a first surface and a second surface of the quartz wafer, respectively. A first photoresist material layer and a second photoresist material layer are fully formed on the first metal material layer and the second metal material layer, respectively. Only the first photoresist material layer is performed to an exposure and development process to form a first patterned photoresist layer. A portion of the first metal material layer is removed by the first patterned photoresist layer to form a metal pattern. The first patterned photoresist layer and the second photoresist material layer are removed.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
A resonator including a vibration structure, a first electrode, and a second electrode is provided. The vibration structure includes a vibration region, a protrusion portion, an opening, and a frame portion. The vibration region has a first surface and a second surface opposite to the first surface. The protrusion portion surrounds the vibration region. The opening is disposed at a side of the vibration region and between the vibration region and the protrusion portion. The opening has a first side adjacent to the vibration region and a second side far away from the vibration region. The second side is opposite to the first side. A length of the first side is greater than a length of the second side. The frame portion surrounds the protrusion portion. The first electrode is disposed on the first surface. The second electrode is disposed on the second surface.
An oscillating device includes a heater, a thermoelectric cooler, a frequency source, a temperature controlled circuit, and a voltage controlled oscillation circuit. When the ambient temperature is in a low-temperature range, the temperature controlled circuit drives the heater to a target temperature to adjust an operating temperature of the frequency source. When the ambient temperature is in a high-temperature range, the temperature controlled circuit drives the thermoelectric cooler to the target temperature to adjust the operating temperature of the frequency source, and the voltage controlled oscillation circuit drives the frequency source to reduce a frequency variation of the frequency source resulted from the variation of the ambient temperature. Alternatively, the heater or the voltage controlled oscillation circuit may be omitted.
H03B 5/04 - Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
H03B 5/36 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
An oscillating device includes a first quartz crystal resonator, a driving circuit, a first waveform adjustment circuit, and at least two second quartz crystal resonators. The first quartz crystal resonator has a first resonant frequency. The driving circuit, coupled to the first quartz crystal resonator, drives the first quartz crystal resonator to generate a first oscillating signal having the first resonant frequency. The second quartz crystal resonators, coupled in parallel and coupled to the driving circuit and the first quartz crystal resonator, have a second resonant frequency and receive and rectify the first oscillating signal to generate a second oscillating signal having the second resonant frequency. The first waveform adjustment circuit, coupled to the second quartz crystal resonators, receives the second oscillating signal and adjusts the second oscillating signal to generate a first waveform adjustment signal.
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
G01P 15/097 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by vibratory elements
H03H 9/125 - Driving means, e.g. electrodes, coils
A temperature-controlled oscillating device includes a supporting base, a mounting glue, an IC, at least one conducting medium, a temperature sensor, a quartz crystal package, and a heater. The mounting glue is formed on the supporting base. The IC is formed on the mounting glue. The conducting medium and the temperature sensor are formed on the IC. The quartz crystal package is formed on the conducting medium. The quartz crystal package includes a first quartz substrate, a second quartz substrate, and a third quartz substrate. The heater is formed on the quartz crystal package or the IC. There is no base arranged between the IC and the quartz crystal package.
An infrared sensor uses an infrared lens with infrared filtering and focusing functions. Thus, an infrared filter can be omitted to reduce the costs and volume. In addition, a getter on the inside of a metal cover of the infrared sensor can be activated when the metal cover is soldered to the substrate of the infrared sensor. Therefore, the packaging process of the infrared sensor can be simplified.
G01J 5/068 - Arrangements for eliminating effects of disturbing radiationArrangements for compensating changes in sensitivity by controlling parameters other than temperature
An oscillating device includes a first quartz crystal resonator, a driving circuit, a first buffer, an attenuator, a second quartz crystal resonator, and a second buffer. The first quartz crystal resonator and the second quartz crystal resonator respectively have a first resonant frequency and a second resonant frequency. The driving circuit drives the first quartz crystal resonator to generate a first oscillating signal having the first resonant frequency. The first buffer generates a first clock signal in response to the first oscillating signal. The attenuator reduces the wave swing of the first clock signal to generate an attenuated signal. The second quartz crystal resonator rectifies the attenuated signal to generate a second oscillating signal having the second resonant frequency. The second buffer generates a second clock signal in response to the second oscillating signal.
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
H03B 5/04 - Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
A structure for packaging a crystal oscillator includes a package base, at least one glue, a resonant crystal blank, and a top cover. The top of the package base has a recess. The glue is formed in the recess. The resonant crystal blank has at least one opening, at least one border area, at least one connection area, and a resonant area. The opening is arranged between the border area and the resonant area. The border area is connected to the resonant area through the connection area. The border area is formed in the recess through the glue. The top cover is formed on the top of the package base. The top cover closes the recess, the at least one glue, and the resonant crystal blank.
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H10N 30/87 - Electrodes or interconnections, e.g. leads or terminals
29.
Vibration-absorbing structure for packaging a crystal resonator
A vibration-absorbing structure for packaging a crystal resonator includes a package base, a resonant crystal blank, and a top cover. The top of the package base has a recess. The sidewall of the package base surrounds the recess. The resonant crystal blank has a border area, at least one serpentine connection area, and a resonant area. The serpentine connection area is connected between the border area and the edge of the resonant area. The border area is arranged on the sidewall. The top cover, arranged on the border area, covers the recess, the at least one serpentine connection area, and the resonant area.
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
30.
Crystal oscillator and method for fabricating the same
A crystal oscillator and a method for fabricating the same is provided. In the method, a crystal package is provided. The crystal package includes a crystal blank and at least one laser-penetrating area. The laser-penetrating area is exposed outside. The crystal package is provided with at least one airtight space therein. At least one getter is formed in the airtight space. The location of the laser-penetrating area corresponds to that of the getter. A laser beam penetrates through the laser-penetrating area to activate the getter, thereby increasing the degree of vacuum of the airtight space.
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H01L 41/053 - Mounts, supports, enclosures or casings
H01L 41/313 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by laminating or bonding of piezo-electric or electrostrictive bodies by metal fusing or with adhesives
31.
Temperature-controlled and temperature-compensated oscillating device and method thereof
A temperature-controlled and temperature-compensated oscillating device and a method of temperature control and temperature compensation is disclosed. The operating temperature of a frequency source is adjusted by driving a heater to a target temperature when the ambient temperature is in a first range between a first temperature and a second temperature higher than the third temperature. The frequency variation of the frequency source resulted from a variation of the ambient temperature is reduced by applying a voltage to the frequency source when the ambient temperature is in a second range between a third temperature and a fourth temperature higher than the third temperature. The third temperature is higher than the first temperature.
H03B 5/04 - Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
H03B 5/36 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
An oscillator wafer-level-package structure is provided, comprising a bottom layer, an oscillator crystal and a capping layer. The bottom layer includes an upper plane, the capping layer includes a lower plane, and the oscillator crystal is disposed between the bottom layer and the capping layer and includes at least one cavity. An upper seal ring and a lower seal ring are respectively surrounding the oscillator crystal such that the oscillator crystal is sealed in between the capping layer and the bottom layer by employing the upper and lower seal rings. In addition, a diffusion barrier is further disposed in the upper seal ring and in the lower seal ring for avoiding interface diffusion. Moreover, the present invention adopts the same material for fabricating the capping layer, the oscillator crystal and the bottom layer to achieve an optimal thermal stress result when realizing the packaging structure.
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
H01L 41/053 - Mounts, supports, enclosures or casings
An oven controlled crystal oscillator consisting includes a substrate, which includes a substrate, at least one base, a crystal blank, a first cover lid, an IC chip, a heat-insulating adhesive, a heater, and a second cover lid. The top of the base is provided with a cavity, and the top of the base is connected to the substrate through conductive wires without using solder. The crystal blank is mounted in the cavity. The first cover lid seals the cavity. The IC chip is mounted on the bottom of the base. The base is mounted on the substrate through the IC chip and the heat-insulating adhesive, and the IC chip is mounted to the bottom of the base. Alternatively, the IC chip and the base are horizontally arranged. The second cover lid is mounted on the top of the substrate.
A quartz oscillating plate comprises a substrate having a notch. Two sides of the notch respectively have a first side-electrode and a second side-electrode. The first side-electrode receives an external signal. The external signal is transmitted along the perimeter of the substrate. The notch of the substrate can increase the length of the transmission path of oscillation energy. The present invention can improve the Q value of the quartz oscillator using the quartz oscillating plate and optimize the performance of the products using the quartz oscillator.
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
An oven controlled crystal oscillator consisting of heater-embedded ceramic package includes a substrate, a crystal package, a crystal blank, a metal lid, a first IC chip, and a cover lid. The crystal package is mounted on the substrate, and a central bottom of the crystal package is provided with the first IC chip. The crystal blank is mounted in the crystal package and sealed by the metal lid. The crystal package has an embedded heater layer establishing a symmetric thermal field with respect to the first IC chip and the crystal blank. Alternatively, a heater-embedded ceramic carrier substrate is arranged between the first IC chip and the crystal blank to establish a symmetric thermal field with respect to the first IC chip and the crystal blank. The cover lid is combined with the substrate to cover the crystal package and the metal lid.
An oven controlled crystal oscillator consisting of heater-embedded ceramic package includes a substrate, a crystal package, a crystal blank, a metal lid, a first IC chip, and a cover lid. The crystal package is mounted on the substrate, and a central bottom of the crystal package is provided with the first IC chip. The crystal blank is mounted in the crystal package and sealed by the metal lid. The crystal package has an embedded heater layer establishing a symmetric thermal field with respect to the first IC chip and the crystal blank. Alternatively, a heater-embedded ceramic carrier substrate is arranged between the first IC chip and the crystal blank to establish a symmetric thermal field with respect to the first IC chip and the crystal blank. The cover lid is combined with the substrate to cover the crystal package and the metal lid.
A photosensor chip package structure comprises a substrate, a light-emitting chip and a photosensor chip including an ambient light sensing unit and a proximity sensing unit. The substrate has a first basin, a second basin and a light-guiding channel. The openings of the first and second basins respectively face different directions. One opening of the light-guiding channel and the opening of the first basin face the same direction. The other opening of the light-guiding channel interconnects with the second basin. The light-emitting chip is arranged in the first basin. The photosensor chip is arranged in the second basin. The light-guiding channel conducts the light generated by the light-emitting chip and the ambient light to the photosensor chip. The photosensor chip operates as soon as it receives the light generated by the light-emitting chip and/or the ambient light.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
38.
Through silicon via-based oscillator wafer-level-package structure and method for fabricating the same
The present invention provides a TSV-based oscillator WLP structure and a method for fabricating the same. The method of the present invention comprises steps: providing a silicon base having an oscillator unit disposed thereon; forming on the silicon base at least one package ring surrounding the oscillator unit; and disposing a silicon cap on the package ring to envelop the oscillator unit. The present invention adopts a cap and a base, which are made of the same material, to effectively overcome the problem of thermal stress occurring in a conventional sandwich package structure. Further, the present invention elaborately designs the wiring on the lower surface of the base to reduce the package size and decrease consumption of noble metals.
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups or
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
H03B 1/00 - GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNERGENERATION OF NOISE BY SUCH CIRCUITS Details
patents