An optoelectronic semiconductor device includes a top contact and a conductive carrier including a metallic molybdenum conductive carrier substrate. A metal layer is deposited on the metallic molybdenum conductive carrier substrate. A light emitting film is disposed between the top contact, a mirror layer and the metallic molybdenum conductive carrier substrate.
An optoelectronic semiconductor device includes a top contact and a conductive carrier including a metallic molybdenum conductive carrier substrate. A metal layer is deposited on the metallic molybdenum conductive carrier substrate. A light emitting film is disposed between the top contact, a mirror layer and the metallic molybdenum conductive carrier substrate.
A chip level package photodiode includes a first conductive layer located at a first side of the chip level package photodiode. A first contact is located at a second side of the chip level package photodiode. A dopant diffusion layer is formed between the first conductive layer and the first contact electrically connecting the first conductive layer to the first contact, the dopant diffusion layer proceeding from the first side of the chip level package photodiode to the second side of the chip level package photodiode completely through a depletion zone of the chip level package photodiode.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
A chip level package photodiode includes a first conductive layer located at a first side of the chip level package photodiode. A first contact is located at a second side of the chip level package photodiode. A dopant diffusion layer is formed between the first conductive layer and the first contact electrically connecting the first conductive layer to the first contact, the dopant diffusion layer proceeding from the first side of the chip level package photodiode to the second side of the chip level package photodiode completely through a depletion zone of the chip level package photodiode.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A method of producing a photodiode having a layer structure that comprises a front-side first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type into which the first semiconductor layer is embedded, and an adjoining rear-side third semiconductor layer of the second conductivity type having a higher doping concentration in comparison with the second semiconductor layer includes providing a substrate wafer composed of a semiconductor material. A layer sequence having a first, second, and third semiconductor region on and/or in the substrate wafer is produced. The first and second semiconductor regions form the first and second semiconductor layers, and the layer sequence is partly removed from the rear side of the substrate wafer until the third semiconductor region is reduced to the thickness of the third semiconductor layer.
Devices, methods, and systems for detecting proximity. A first light emitter emits light for a first time period while a light detector is not sensing. A second light emitter emits light for a second time period while the light detector is sensing. In some implementations, the first light emitter directly illuminates the light detector during the first time period, whereas the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter is obstructed from illuminating a display during the first time period, and the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter emits the light during the first time period such that the light detector maintains a linear responsivity during the second time period.
H03K 17/94 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the way in which the control signals are generated
Devices, methods, and systems for detecting proximity. A first light emitter emits light for a first time period while a light detector is not sensing. A second light emitter emits light for a second time period while the light detector is sensing. In some implementations, the first light emitter directly illuminates the light detector during the first time period, whereas the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter is obstructed from illuminating a display during the first time period, and the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter emits the light during the first time period such that the light detector maintains a linear responsivity during the second time period.
Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information; and controlling brightness of the display based on the ambient light level result.
A display device and a method for operating a display device disclosed herein include transmitting a proximity signal from a proximity sensor, the proximity sensor being positioned under a lower surface of a surface layer with an illumination component being positioned between the surface layer and the proximity sensor, in response to the illumination component being deactivated, receiving a reflected proximity signal based on the proximity signal, determining a proximity value based on the reflected proximity signal and modifying an operation of the display device based on the proximity value. The modifying the operation of the display device includes any one or a combination of activating the illumination component, deactivating the illumination component, or modifying a property of the illumination component.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G01S 17/08 - Systems determining position data of a target for measuring distance only
Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; and generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information.
The invention relates to a method for trimming the light sensitivity of phototransistors which are produced in a wafer-based semiconductor process and which each have a rear-side collector, a base (13) embedded in the collector, an emitter (15) embedded in the base, and a front-side metallisation that comprises at least one bond pad (19) for the emitter and in particular a trimming structure (25), wherein the regions of the front side that are coated by the metallisation define a light-insensitive surface of the relevant phototransistor and the metal-free regions of the front side define a light-sensitive surface of the relevant phototransistor, wherein the method comprises the steps of: measuring the collector-emitter current of the phototransistor, and changing, in particular increasing, according to the measured collector-emitter current, the size of the light-sensitive surface by changing the size of the surface coated by the metallisation, in particular by removing at least some of the trimming structure.
H01L 31/11 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; and generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information.
A drive circuit has a control signal input for receiving a first control signal at a first circuit input, an optocoupler which is connected to the control signal input and which is adapted to generate a galvanically decoupled second control signal in accordance with the first control signal, an output circuit for controlling at least one circuit output terminal of the drive circuit in accordance with a third control signal, and an electronic control circuit comprising an energy supply, an input for receiving the second control signal, and an output for outputting the third control signal in accordance with the second control signal received at the input.
H03K 17/689 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
H03K 17/567 - Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
An optical encoder comprises an emitter; a receiver; a reflector; and a code carrier, wherein the emitter emits electromagnetic radiation along an emission axis in the direction of the reflector and the reflector deflects the electromagnetic radiation along a reception axis in the direction of the receiver. The code carrier is movably supported and has a sequence of code sections to interrupt or to give way for the emitted electromagnetic radiation to impinge on the detector in dependence on the position of the code carrier, wherein the emission axis and the reception axis extend at an alignment angle with respect to one another that has a value in the range from 30 degrees to 150 degrees.
G01D 5/347 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
The present invention relates to a method for producing a photodiode, which has a layer structure comprising: - a front-surface first semiconductor layer of a first conductivity type; - a second semiconductor layer of a second conductivity type, in which the first semiconductor layer is embedded; and - a back-surface third semiconductor layer of the second conductivity type, which adjoins the second semiconductor layer and has a higher doping concentration than the second semiconductor layer; wherein the first and second semiconductor layers define a p-n junction and the third semiconductor layer defines a back surface field, and wherein the ratio of the thickness of the third semiconductor layer to the thickness of the layer structure is not more than 0.25. The method comprises: - providing a substrate wafer made of a semiconductor material; - producing a layer sequence having a first, a second and a third semiconductor region on and/or in the substrate wafer, the first and second semiconductor regions forming the first and second semiconductor layers; and - partially removing the layer sequence, proceeding from the back surface of the substrate wafer, until the third semiconductor region is reduced to the thickness of the third semiconductor layer.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
16.
RADIATION SENSOR AND MANUFACTURING METHOD FOR SAME
A radiation sensor has a substrate, a radiation sensitive chip thereon, a radiation impermeable frame joined to the chip side surfaces and surrounding the chip, and a radiation permeable layer over the chip. The frame does not project or does not substantially project over the upper edge of the chip along a substantial part of its inner periphery. The radiation permeable layer value projects over the chip in the lateral direction and is on the frame or above it.
A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.
H01L 31/11 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Techniques, devices, and systems disclosed herein include detecting a vertical synchronization (VSYNC) signal cycle, determining a high frequency trigger pulse based on detecting an illumination component's pulse width modulation (PWM) signal, the high frequency trigger pulse corresponding to the illumination component's deactivation times, receiving a delay time period and activating a first sensor, at a first time, within the VSYNC signal cycle, the first time determined based on the high frequency trigger pulse and the delay time period. The first sensor may sense a first sensor reading and may be deactivated after being activated. A display setting may be adjusted based at least on the first sensor reading and the illumination component may be activated after the first sensor is deactivated.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 5/12 - Synchronisation between the display unit and other units, e.g. other display units, video-disc players
Techniques, devices, and systems disclosed herein include detecting a vertical synchronization (VSYNC) signal cycle, determining a high frequency trigger pulse based on detecting an illumination component's pulse width modulation (PWM) signal, the high frequency trigger pulse corresponding to the illumination component's deactivation times, receiving a delay time period and activating a first sensor, at a first time, within the VSYNC signal cycle, the first time determined based on the high frequency trigger pulse and the delay time period. The first sensor may sense a first sensor reading and may be deactivated after being activated. A display setting may be adjusted based at least on the first sensor reading and the illumination component may be activated after the first sensor is deactivated.
The invention relates to an optical encoder (10) comprising a transmitter (12), a receiver (14), a reflector (16) and a code carrier (18), wherein the transmitter emits electromagnetic radiation along a transmission axis (S) in the direction of the reflector (16) and the reflector deflects the electromagnetic radiation along a receiving axis (E) in the direction of the receiver. The code carrier is movably mounted and has a sequence of code segments (26) in order to interrupt the emitted electromagnetic radiation in dependence on the position of the code carrier or to release the emitted electromagnetic radiation to impinge on the detector, wherein the transmission axis (S) and the receiving axis (E) extend in an alignment angle relative to each other which has a value in the range from 30 degrees to 150 degrees.
G01D 5/347 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
The invention relates to a driver circuit having: a control signal input for receiving a first control signal at a first circuit input; an optocoupler which is connected to the control signal input and is designed to generate a galvanically decoupled second control signal according to the first control signal; an output circuit for controlling at least one circuit output terminal of the driver circuit according to a third control signal; and an electronic control circuit having a power supply, an input for receiving the second control signal, and an output for outputting the third control signal according to the second control signal received at the input.
H03K 17/689 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
H03K 17/78 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
A radiation sensor comprises a substrate, a radiation-sensitive chip on the latter, a radiation-opaque frame that is attached to the chip side surfaces and surrounds the chip, and a radiation-transmissive layer over the chip. With a substantial part of its inner circumference, the frame does not project, or does not substantially project, above the upper edge of the chip. The radiation-transmissive layer protrudes above the chip in the lateral direction and rests on the frame or thereabove.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 31/102 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
23.
Color-mixing LED component and method of production therefor
A color mixing light emitting diode (LED) assembly comprises a carrier and at least three LEDs that are arranged on the carrier and configured to emit light in mutually different colors and together generate an output radiation that corresponds to an additive color mix, wherein each of the LEDs has an individual emission characteristic. The LED assembly furthermore comprises a respective driver input for each of the LEDs to supply the LEDs with electrical energy, wherein the emission characteristics of the LEDs are dependent on the respective energy supply so that the color mix of the output radiation can be set by varying the respective energy supply at the driver inputs. The LED assembly has a calibration information element that includes at least one readable calibration value for each of the LEDs that represents the individual emission characteristic of the respective LED.
H05B 45/24 - Controlling the colour of the light using electrical feedback from LEDs or from LED modules
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
24.
PHOTOSENSITIVE SEMICONDUCTOR COMPONENT, METHOD FOR FORMING A PHOTOSENSITIVE SEMICONDUCTOR COMPONENT
The invention relates to a photosensitive transistor having a semiconductor substrate (10) of the first conductivity type as a collector layer, above a less doped layer (11) of the first conductivity type having regions of different thickness, a semiconductor base layer (12) of the second conductivity type over at least parts of the regions of the less doped layer (11), and an emitter layer (13) of the first conductivity type over at least parts of the base layer (12) but not over at least one part of the part of the base layer (12) that lies above the thinner region of the less doped layer (11).
H01L 31/11 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
The present invention relates to an electronic unit having at least one first electronic component and one second electronic component that are fastened to a substrate. A shielding is arranged between the first and second electronic components that comprises an elevated portion that projects from a plane defined by the substrate or that extends from its surface, that acts as a shielding and that is formed in one piece with the substrate.
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/552 - Protection against radiation, e.g. light
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
H01L 23/04 - ContainersSeals characterised by the shape
An optoelectronic apparatus is provided, comprising a carrier device that has a longitudinal extent and a transverse extent, wherein the carrier device has a plurality of electrically conductive tracks aligned in parallel with the longitudinal extent, and wherein the carrier device has a plurality of contact chambers aligned in parallel with the transverse extent at an upper side. Each of the contact tracks is electrically contactable in each contact chamber to be able to install at least one optoelectronic transmitter and/or at least one optoelectronic receiver in a variable mounting in the respective chamber.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
An optoelectronic apparatus is provided that has at least one optoelectronic transmitter and at least one optoelectronic receiver. The optoelectronic apparatus furthermore has a storage device having at least one non-volatile memory that is adapted to store an individual data set. A data interface is furthermore provided that is adapted to at least partly read the individual data set out of the non-volatile memory of the storage device.
An optoelectronic apparatus is provided having a carrier device that has at least one optoelectronic transmitter and/or at least one optoelectronic receiver at an upper side; having a lens element that is provided above the carrier device and that has at least one lens section for the at least one optoelectronic transmitter and/or for the at least one optoelectronic receiver; and having a holding device that at least partly surrounds the carrier device and the lens element. The lens element has a mechanical coding section that projects out of the holding device and that enables at least one coding element for identifying the optoelectronic apparatus.
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
An optoelectronic apparatus is provided having a carrier device that has at least one optoelectronic transmitter and/or at least one optoelectronic receiver at an upper side; at least one first optical element, a second optical element, and a third optical element that are arranged in a layer arrangement above the carrier device, with the second optical element being arranged above the first optical element and the third optical element being arranged above the second optical element, and with each of the at least three optical elements comprising a lens element, an aperture element or a filter element; and a holding device that holds at least the first optical element and the second optical element relative to the carrier device and partly surrounds them, with the holding device furthermore either holding the third optical element relative to the carrier device and partly surrounding the third optical element or forming the third optical element.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
A colour-mixing LED component comprises a support and at least three light-emitting diodes arranged on the support, which are designed to emit light in colours which differ from one another and hereby to generate together an output radiation which corresponds to additive colour mixing, wherein each of the light-emitting diodes has an individual emissions characteristic. The LED component further comprises a specific driver input for each of the light-emitting diodes for supplying the light-emitting diode with electrical power, wherein the emissions characteristic of the light-emitting diodes is dependent on the specific power supply, and therefore the colour mix of the output radiation can be adjusted by varying the specific power supply at the driver inputs. The LED component comprises a calibration information element which contains for each of the light-emitting diodes at least one readable calibration value which represents the individual emissions characteristic of the light-emitting diode concerned.
The present invention relates to an electronic unit comprising at least one electronic component secured on a substrate, the electronic component (14) being located in a first recess of the substrate (12). An electrically conductive contact element (26) is provided, in particular a wire, which produces an electrically conductive connection between the electronic component (14) and a contact point located on a base section (24) of a second recess (18).
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/552 - Protection against radiation, e.g. light
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
The present invention relates to an electronic unit comprising at least a first electronic component (14) and a second electronic component (14'), which are mounted on a substrate. Between the first and the second electric component (14, 14') a shielding is arranged, which comprises a raised portion that protrudes from a plane defined by the substrate (12) or extends from the surface of said substrate and acts as a shielding, the raised portion (34) being formed integrally with the substrate (12).
H01L 23/552 - Protection against radiation, e.g. light
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
The invention relates to an optoelectronic device, in particular an optoelectronic sensor device, comprising a support device (12), which has at least one optoelectronic transmitter (40) and at least one optoelectronic receiver (42) on an upper face, and at least one first optical element (14), a second optical element (16), and a third optical element (20), which are arranged above the support device (12) in a layer arrangement. The second optical element (16) is arranged above the first optical element (14), and the third optical element (20) is arranged above the second optical element (16). Each of the at least three optical elements comprises a lens element, an aperture element, or a filter element. The optoelectronic element also comprises a retaining device (18, 20) which retains at least the first optical element (14) and the second optical element (16) relative to the support device (12) and partly surrounds said elements. Furthermore, the retaining device (18, 20) either retains the third optical element (20) relative to the support device and partly surrounds said element or forms the third optical element. The device has a modular design in the manner of a modular system, wherein the device is assembled from different separate components. The modular design allows the optical properties to be set in a simple manner.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
34.
OPTOELECTRONIC APPARATUS COMPRISING A COMPONENT CARRIER WHICH HAS CONTACT CHAMBERS
The invention presents an optoelectronic apparatus, in particular an optoelectronic sensor apparatus, comprising a carrier device (12) which has a longitudinal extent and a transverse extent, wherein the carrier device (12) has a leadframe with a plurality of electrically conductive contact tracks (92, 92') which are oriented parallel to the longitudinal extent, and wherein the carrier device has, on a top side, a plurality of contact chambers which are oriented parallel to the transverse extent and are formed by separating webs (104). Each of the contact tracks (92, 92') can be electrically contacted in each contact chamber in order to be able to install at least one optoelectronic transmitter (40) and/or at least one optoelectronic receiver (42) in the respective contact chambers with variable population.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
35.
OPTOELECTRONIC DEVICE HAVING AN IDENTIFICATION ELEMENT
The invention relates to an optoelectronic, comprising a carrier apparatus (12), which has at least one optoelectronic transmitter (40) and/or at least one optoelectronic receiver (42) on a top side; a lens element (16), which is provided above the carrier apparatus and has at least one lens section (68) for the at least one optoelectronic transmitter and/or the at least one optoelectronic receiver; and a retaining apparatus (18, 20), which partially extends around the carrier apparatus (12) and the lens element (16). The lens element has a mechanical coding section (60), which protrudes from the retaining apparatus and has at least one coding element for identifying the optoelectronic device. The risk of confusing two different device types and the risk of incorrect assembly can thereby be minimized.
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0232 - Optical elements or arrangements associated with the device
The invention relates to an optoelectronic device, comprising at least one optoelectronic transmitter and at least one optoelectronic receiver. The optoelectronic device further comprises a memory device having at least one non-volatile memory which is adapted to store an individual set of data. A data interface is further provided, which is adapted to at least partially read out the individual set of data from the non-volatile memory of the memory device.
A surface mountable electronic component free of connecting wires comprises a semiconductor substrate, wherein a plurality of solderable connection areas are arranged at the underside of the component. The component comprises at least one recess is formed in the region of the edges bounding the underside; and in that the recess is covered with an insulating layer. A method for the manufacture of such a component comprises the formation of corresponding recesses.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/00 - Details of semiconductor or other solid state devices
The invention relates to a surface-mountable electronic component, which has no connection wires and comprises a semiconductor substrate. Several connection surfaces that can be soldered are arranged on the underside of the component. The component is characterized in that at least one recess is formed in the area of the edges that bound the underside, and that the recess is covered with an insulating layer. A method for producing such a component comprises the production of corresponding recesses.
The invention relates to an infrared receiver circuit for receiving a carrier-modulated infrared signal that comprises a carrier signal and a wanted signal modulated onto the carrier signal, having a band pass filter that exhibits a frequency adjustment connection via which the band center frequency of the band pass filter can be adjusted, furthermore having a demodulator for recovering the wanted signal and having a signal output to which the demodulated wanted signal can be output. The infrared receiver circuit exhibits a signal input that is at least indirectly connected to the frequency adjustment connection of the band pass filter so that the band center frequency of the band pass filter can be adjusted by a clock signal of an external clock pulse generator.
The invention relates to an infrared receiver circuit for processing a carrier-modulated infrared signal, comprising an amplification circuit and a demodulator. A comparator is provided, which is designed to digitize the output signal of the amplification circuit or of a band pass filter connected downstream of the amplification circuit by comparison to a threshold value in order to create a pulse train signal. The receiver circuit comprises a logic circuit, which is designed to link the pulse train signal of the comparator and the output signal of the demodulator logically to each other in order to extract an additional output signal corresponding to the infrared signal from the pulse train signal.
The invention relates to an infrared receiver circuit for receiving a carrier-modulated infrared signal that comprises a carrier signal and a wanted signal modulated onto the carrier signal, having a band pass filter that exhibits a frequency adjustment connection via which the band center frequency of the band pass filter can be adjusted, furthermore having a demodulator for recovering the wanted signal and having a signal output to which the demodulated wanted signal can be output. The infrared receiver circuit exhibits a signal input that is at least indirectly connected to the frequency adjustment connection of the band pass filter so that the band center frequency of the band pass filter can be adjusted by a clock signal of an external clock pulse generator.
The invention relates to an infrared receiver circuit for processing a carrier-modulated infrared signal, comprising an amplification circuit and a demodulator. A comparator is provided, which is designed to digitize the output signal of the amplification circuit or of a band pass filter connected downstream of the amplification circuit by comparison to a threshold value in order to create a pulse train signal. The receiver circuit comprises a logic circuit, which is designed to link the pulse train signal of the comparator and the output signal of the demodulator logically to each other in order to extract an additional output signal corresponding to the infrared signal from the pulse train signal.
A surface-mountable electronic device free of leads has a plurality of solderable connection surfaces at its lower side, with at least one of the connection surfaces having a rectangular portion. The outline of this rectangular portion corresponds to a connection surface of the JEDEC Standard MO-236 or of any other standard according to which the respective connection surface should not extend directly up to a side edge of the lower device side. The at least one connection surface furthermore has an extension section which extends, starting from the rectangular portion, in the direction of a side edge of the lower side of the device.
H05K 1/16 - Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
H01G 2/06 - Mountings specially adapted for mounting on a printed-circuit support
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
A temperature-measuring unit for determining a sunlight-compensated temperature inside a motor vehicle has a temperature sensor, a light sensor and a plurality of metal conductor tracks for electrically contact-connecting the temperature sensor and the light sensor. The temperature sensor, the light sensor and parts of the conductor tracks are surrounded by a common housing which is translucent at least in a region between a light entrance area of the housing and the light sensor. Inside the housing, the temperature-measuring unit is designed to suppress light reflection which impinges on the light sensor.
The invention relates to a circuit arrangement for supplying a photodiode (PD) with a bias. The circuit arrangement has a first voltage supply connection (VCC) for connecting a first terminal of a voltage source and a second voltage supply connection (GND) for connecting a second terminal of the voltage source, wherein the first voltage supply connection is connected to a first connection of the photodiode, and the second voltage supply connection is connected to a second connection of the photodiode. A first current control device (M1) having a control input, which is connected to the first connection of the photodiode in a low-pass filter arrangement (C1, R3), is connected between the first voltage supply connection and the second connection of the photodiode.
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
The invention relates to an infrared remote control signal processing circuit for processing a remote control signal. The processing circuit comprises within an integrated circuit a first and a second reception channel. The first reception channel is provided with a bandpass filter with a bandpass frequency that corresponds to a predetermined carrier frequency of the remote control signal. The second reception channel has no frequency filter or at least a filter with a wider bandpass range than the first reception channel. The two reception channels have respective allocated signal outputs for connection to an evaluation circuit.
A sensor arrangement, in particular as part of a reflection light barrier, includes a carrier as well as a photodiode, a first light emitting diode for emitting a measuring light beam, and a second light emitting diode for emitting a reference light beam, in particular a reference light beam pulsed offset in time with respect to the measuring light beam, arranged on the carrier, and further includes a light permeable housing enclosing the photodiode and the two light emitting diodes. The second light emitting diode is arranged on the carrier and in the housing such that the reference light emitted by it is essentially not incident on the side of the photodiode but rather is reflected internally in the housing to be incident onto an upper surface of the photodiode.
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