An object of the present invention is to provide a control circuit and a semiconductor module that can control detection of a defective state due to the life of an optical coupler. A control circuit includes: a photo coupler defect detecting circuit configured to detect a defective state including deterioration and abnormality of a photo coupler; and a warning output circuit configured to notify that the defective state of the photo coupler is detected by the photo coupler defect detecting circuit.
Provided is a silicon carbide MOSFET inverter circuit in which a first and second silicon carbide MOSFETs are connected in series, wherein: a current density of a transient current is less than 1000A/cm2 during a turn-off period of a to-be-controlled MOSFET; and a gate of the to-be-controlled MOSFET is turned on during the turn-off period such that a saturation current period is less than 5 μs. Provided is a control method of a silicon carbide MOSFET inverter circuit in which a first and second silicon carbide MOSFETs are connected in series, comprising: turning off a to-be-controlled MOSFET; and turning on a gate of the to-be-controlled MOSFET during a turn-off period of the to-be-controlled MOSFET such that a saturation current period is less than 5 μs, wherein a current density of a transient current is less than 1000A/cm2 during the turn-off period.
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
In a semiconductor substrate, on an n+-type starting substrate constituting an n+-type drain region, an n−-type epitaxial layer constituting an n−-type drift region, another n-type epitaxial layer constituting an n-type current spreading region, and a p-type epitaxial layer constituting a p-type base region are sequentially stacked. In the epitaxial layers, a crystallinity in an active-region operating portion, in which a trench gate structure is formed, is superior to a crystallinity in a region outside the active-region operating portion by removing a portion of the epitaxial layers having the superior crystallinity. Thus, in the stacked structure, in an entire region outside the active-region operating portion, all portions where the minority carrier lifetime is longer than the minority carrier lifetime of the n−-type drift region are completely removed, thereby making the minority carrier lifetime uniform.
Provided is a semiconductor device, including: a semiconductor substrate including an active portion provided with a transistor portion; an emitter electrode provided above a front surface of the semiconductor substrate; and a protective film provided above the emitter electrode, where the active portion includes: an emitter region of a first conductivity type provided on the front surface of the semiconductor substrate; a contact region of a second conductivity type; and a plurality of trench portions, where the emitter electrode includes an exposed portion not covered by the protective film, and where the active portion includes: in a region in which the exposed portion is provided, a first region; and a second region provided at an outer circumference of the first region and having a channel density lower than that of the first region.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
A semiconductor device includes a plurality of semiconductor units connected in parallel to each other; a housing for surrounding the plurality of semiconductor units; a lid disposed on the housing and facing the plurality of semiconductor units; a wiring portion disposed on the lid; and a plurality of connecting portions, each corresponding to one of the plurality of semiconductor units, in which: each of the plurality of semiconductor units includes a first conductor; a semiconductor chip disposed on the first conductor; and a second conductor connected to the semiconductor chip so as to control the semiconductor chip, and a connecting portion that is any one of the plurality of connecting portions is interposed between the wiring portion and a second conductor included in a corresponding semiconductor unit and is electrically connecting the wiring portion to the second conductor included in the corresponding semiconductor unit.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Provided is a semiconductor device which includes: a current detection part through which a detection current corresponding to a main current of a transistor part flows; a current detection pad disposed above a semiconductor substrate and disposed side by side with the current detection part in a first direction; a built-in resistance part which is provided above the semiconductor substrate and which connects the current detection part and the current detection pad; and gate wiring disposed above the semiconductor substrate and connected to a gate conductive part. The built-in resistance part and the gate wiring are disposed side by side, between the current detection part and the current detection pad, in the first direction.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
A power converter includes a capacitor, a substrate on which a plurality of switching elements for power conversion are mounted, a housing that accommodates the substrate, and a plurality of lines. Each line is electrically connected to the capacitor and many of the plurality of switching elements. At least one line among the plurality of lines includes a conductive pattern formed on the substrate.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H02M 7/537 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
A semiconductor device, including a wiring member having a coil portion. The coil portion includes: a plurality of first slits and a plurality of second slits arranged alternately in a first direction, each first slit extending from a first side of the wiring member in a second direction, and each second slit extending from a second side of the wiring member in a direction opposite to the second direction, a plurality of first inter-slit regions each between one of the first slits and one of the second slits adjacent thereto in the first direction, and a plurality of second inter-slit regions each between one of the second slits and one of the first slits adjacent thereto in the first direction. The first and second inter-slit regions have first peak portions and second peak portions at center portions thereof, on opposite sides of a principal surface of the wiring member.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
A semiconductor device includes: first and second semiconductor chips provided separately from each other, each semiconductor chip including a first main electrode on a top surface side and a second main electrode on a bottom surface side; and a printed circuit board provided at a circumference of the first and second semiconductor chips, the printed circuit board including a plurality of wiring layers including a first wiring layer which is an uppermost layer electrically connected to the first main electrode of the first semiconductor chip through a connection member, and a second wiring layer which is a lowermost layer electrically connected to the first wiring layer through a via and further to the second main electrode of the second semiconductor chip, and an insulating layer provided between the respective wiring layers.
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/367 - Cooling facilitated by shape of device
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
A semiconductor device, having: a circuit board, including a wiring board and a semiconductor element disposed on a first surface of the wiring board; a case having a hollow portion housing the circuit board; and a first conductive terminal and a second conductive terminal attached to the case, each of the first conductive terminal and the second conductive terminal having an inner connection portion exposed to the hollow portion of the case. The inner connection portions have a first gap therebetween in the hollow portion of the case. The first conductive terminal and the second conductive terminal each have a discharge portion facing each other across a second gap narrower than the first gap. The discharge portion of the first conductive terminal and the discharge portion of the second conductive terminal protrude to a position away from other members.
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/057 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body the leads being parallel to the base
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H02M 7/539 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
H03K 17/08 - Modifications for protecting switching circuit against overcurrent or overvoltage
Provided is a semiconductor device including: a plurality of transistor regions; a gate pad provided over a semiconductor substrate; a built-in resistance part electrically connected to the gate pad; a plurality of gate wiring parts electrically connected to the built-in resistance part and provided in accordance with the plurality of transistor regions; and a plurality of wiring resistance parts provided in accordance with the plurality of gate wiring parts. The plurality of gate wiring parts may include a gate metal layer provided over the semiconductor substrate and a gate runner provided under the gate metal layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The present invention maintains insulating properties between electroconductive plates. According to the present invention, a semiconductor device is equipped with: a first electroconductive plate (22a), which comprises copper or a copper alloy as a main component; a second electroconductive plate (23a), which has a second back surface (23a7) facing the first electroconductive plate (22a) and a side surface connected to the second back surface (23a7) and comprises copper or a copper alloy as a main component; and a second oxide film (23b), which is provided on the second back surface (23a7) and side surface of the second electroconductive plate (23a), has electrical insulating properties, and includes an oxide of a metal element differing from the metal(s) of the second electroconductive plate (23a). A first oxide film (22b) and the second oxide film (23b) are used as insulating members between a first wiring part (22a2) of the first electroconductive plate (22a) and a second wiring part (23a2) of the second electroconductive plate (23a).
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
Provided is a semiconductor device including: a front surface electrode provided above the semiconductor substrate; a trench contact portion at which the front surface electrode and the mesa portion are connected to each other in the transistor portion; and a front surface contact portion at which the front surface electrode and the mesa portion are connected to each other in the diode portion, where a lower end of the front surface contact portion is arranged above a lower end of the trench contact portion.
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
A semiconductor device, including: a semiconductor element; a main terminal that includes a fastening portion including a fastening hole, through which the main terminal is fastenable to an external conductor by a screw and a nut, and an extending portion extending from a first side of the fastening portion toward the semiconductor element, the extending portion being electrically connected to the semiconductor element; and a case that houses the semiconductor element. The case has a recess configured to accommodate the nut fastening the main terminal through the fastening hole. The main terminal further includes a bent portion that is bent from a peripheral edge of the fastening portion at a second side thereof different from the first side, and that is disposed between a wall surface of the recess in the case and the nut fastening the main terminal through the fastening hole.
H01L 23/057 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body the leads being parallel to the base
A semiconductor device, including an electrically conductive portion, and a terminal. The terminal includes a bonding portion that is of a flat plate shape and has: a rear surface bonded to the electrically conductive portion, and a front surface having an indentation formed thereon. The front surface has two opposite sides that are respectively a bonding front-end side and a bonding rear-end side. The indentation has two opposite sides that are respectively an indentation front-end side and an indentation rear-end side. The indentation front-end side is flush with the bonding front-end side. A length of the indentation rear-end side is shorter than a length of the bonding rear-end side.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/057 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body the leads being parallel to the base
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
16.
SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE
A semiconductor module, including: a stacked substrate including a plurality of circuit boards formed on an upper surface of an insulating plate; a semiconductor element formed on an upper surface of one of the plurality of circuit boards; and a metal wiring board formed on an upper surface of the semiconductor element. The metal wiring board has a bonding portion bonded to the upper surface of the semiconductor element via a bonding material. The bonding portion includes a plate-shaped portion having an upper surface and a lower surface. The plate-shaped portion has a roughened region in which a plurality of recessed portions are formed on the upper surface of the plate-shaped portion. The plurality of recessed portions include a plurality of first recessed portions that each has a peeling suppressing portion protruding inward to thereby narrow a width of each first recessed portion.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A semiconductor module, including: a stacked substrate, which includes an insulating plate, and a plurality of circuit boards formed on an upper surface of the insulating plate; a semiconductor element formed on an upper surface of one of the plurality of circuit boards; and a metal wiring board formed on an upper surface of the semiconductor element. The metal wiring board has a plate-shaped bonding portion bonded to the upper surface of the semiconductor element via a bonding material. The plate-shaped bonding portion has a plurality of recessed portions formed on an upper surface thereof, each recessed portion is of a hexagonal shape in a plan view of the semiconductor module.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H05K 1/14 - Structural association of two or more printed circuits
18.
PRESS-FIT TERMINAL, TERMINAL STRUCTURE, AND SEMICONDUCTOR MODULE
A press-fit terminal to be connected to a substrate having a through hole includes a press-fit portion configured to be press-fitted and held inside the through hole; and a fitting portion configured to fit to an outer surface of the substrate outside the through hole and restrict movement of the press-fit terminal in a direction in which the press-fit terminal comes off from the through hole.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A semiconductor module, including: a stacked substrate including a plurality of circuit boards formed on an upper surface of an insulating plate; a semiconductor element formed on an upper surface of one of the plurality of circuit boards; and a metal wiring board formed on an upper surface of the semiconductor element. The metal wiring board has a bonding portion bonded to the upper surface of the semiconductor element via a bonding material. The bonding portion includes a plate-shaped portion having an upper surface and a lower surface. The plate-shaped portion has a roughened region in which a plurality of recessed portions are formed on the upper surface thereof. The plurality of recessed portions include a plurality of kinds, each kind differing in at least one of a size, a shape, and a depth of the recess portions therein from another kind.
Provided is a semiconductor device (100) comprising a floating region (202) of a second conductivity type which is disposed under a lower end (43) of a first gate trench part (40) on the upper surface side of a semiconductor substrate (10) and does not extend under a lower end (33) of a first dummy trench part. A first mesa part is provided in contact with the first gate trench part and includes: an emitter region (12) of a first conductivity type having a higher concentration than in a drift region (18); and a base region (14) of the second conductivity type provided between the emitter region and the drift region and being in contact with the first gate trench part. The lower end of the first dummy trench part is in contact with the region of the first conductivity type.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
A semiconductor device according to the present invention includes a transistor part and a diode part. The transistor part includes a first gate trench part provided closest to the diode part, and a first mesa part that is in contact with the first gate trench part and is provided between the first gate trench part and the diode part. A first floating region is provided below the first gate trench part, and the first mesa part has a non-covering region that does not overlap the first floating region.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
ELECTROMAGNETIC CONTACTOR, INTER-CONTACT GAP ADJUSTMENT METHOD OF ELECTROMAGNETIC CONTACTOR, AND STROKE AMOUNT CALCULATION METHOD AND WIPE AMOUNT CALCULATION METHOD OF ELECTROMAGNETIC CONTACTOR
An electromagnetic contactor comprises: fixed contact pieces 3 including fixed contacts 9; an electromagnet unit 5 to which a movable contact piece 4, the movable contact piece 4 including movable contacts 10, the movable contacts 10 coming into contact with and being separated from the fixed contacts, is joined via a contact support 11; and a hermetically sealed container 2 configured to contain the fixed contact pieces, the movable contact piece, and the electromagnet unit in the same space, wherein in the electromagnet unit 5, unit-side joining portions 25a and 25b, the unit-side joining portions 25a and 25b being joined to container-side joining portions 33 and 36 arranged on the hermetically sealed container from the direction of movement of the movable contact piece, respectively, are arranged, and flat plate-shaped spacers 34 and 37 by which an inter-contact gap G between the fixed contacts and the movable contacts is adjusted are arranged interposed between the container-side joining portion and the unit-side joining portion.
A semiconductor device includes an insulating substrate having a plurality of wiring patterns thereon, a semiconductor chip disposed on one wiring pattern among the plurality of wiring patterns, metal wiring electrically connected to the semiconductor chip, a case having a bottom at which the insulating substrate is disposed, and an insulating encapsulating member that fills in the case from an upper surface of the insulating substrate to have a thickness sufficient to cover the semiconductor chip while leaving at least part of the metal wiring exposed.
A semiconductor module includes a stacked substrate in which a plurality of circuit boards are arranged on an upper surface of an insulating plate, a semiconductor element arranged on an upper surface of at least one of the circuit boards, and a metal wiring board arranged on an upper surface of the semiconductor element. The metal wiring board has a first bonding portion bonded to the upper surface of the semiconductor element via a bonding material. The first bonding portion includes a plate-shaped portion having an upper surface and a lower surface, and at least one groove is provided along an outer periphery of the first bonding portion on the upper surface of the plate-shaped portion.
A semiconductor apparatus is provided, comprising: a heat sink; a first semiconductor module cell which is provided above the heat sink; a second semiconductor module cell which is provided above the heat sink and is provided to be in contact with the first semiconductor module cell; and a casing portion which is coupled to the heat sink and accommodates the first semiconductor module cell and the second semiconductor module cell, the first semiconductor module cell having: a first semiconductor chip; and a first encapsulating portion which covers the first semiconductor chip, the second semiconductor module cell having: a second semiconductor chip; and a second encapsulating portion which covers the second semiconductor chip, a side surface of the first encapsulating portion and that of the second encapsulating portion being in contact with each other.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor device, including: a semiconductor chip formed on a heat dissipation plate; a pool part including a bottom surface, two long lateral faces, and two short lateral faces defining a pool space; a guide part installed in the pool space and having first and second ends both connected to one of the short lateral face, at positions opposite to each other across an inlet formed on the one short lateral face, so as to separate a guide space from the pool space; and a guide plate disposed in the pool space on the guide part. In the plan view, the guide plate has a slit formed within an area thereof overlapping the guide space. The heat dissipation plate is disposed on the pool part. A geometrical area of a cross-section of the guide space becomes smaller as the cross-section is farther away from the inlet of the pool part.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An integrated circuit including: a first command value output circuit outputting a first command value to turn on a transistor for a first time period; an on signal output circuit outputting an on signal to turn on the transistor, in response to an inductor current decreasing to or below a predetermined value after turning-off of the transistor; a delay circuit delaying the on signal by a predetermined time period; a correction circuit generating a second command value to turn on the transistor for a second time period; a driver circuit turning on and off the transistor respectively based on the delayed on-signal and the second command value; and a second estimation circuit estimating the rectified voltage. The correction circuit corrects the first command value based on the first voltage, the estimated rectified voltage, and the predetermined time period.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
A reference voltage circuit includes: a first resistor and a first pn junction device connected in series, and a second resistor, a third resistor, and a second pn junction device connected in series, both between a predetermined line and a ground; a first capacitor and a second capacitor; a voltage output circuit configured to amplify a first voltage at a first node between the first resistor and the first pn junction device, and amplify a second voltage at a second node between the second resistor and the third resistor, for a first time period and a second time period to thereby output a resultant voltage to the first capacitor and the second capacitor, respectively; and an amplifier circuit configured to amplify a difference between voltages at the first and second capacitors. A reference voltage corresponding to a voltage from the first amplifier circuit is applied to the predetermined line.
G05F 3/30 - Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
G01L 9/02 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers
A semiconductor module includes a printed circuit board and an internal terminal unit. The internal terminal unit includes an internal terminal group including a plurality of internal terminals that are aligned in a predetermined direction and each have a first width in the predetermined direction, and an extended internal terminal that has a step portion formed by a first portion having the first width and a second portion having a second width greater than the first width in the predetermined direction and that supports the printed circuit board by the second portion. The extended internal terminal is located at a first end of the internal terminal unit that is opposite to a second end of the internal terminal unit in the predetermined direction. The second portion extends from the first portion in the predetermined direction from the second end toward the first end of internal unit.
A controller is configured to perform a process including operating or releasing an electrically driven hermetic retention device configured to retain airtightness between a door and an opening of a railway vehicle, according to whether or not there is a possibility of an opening operation of the door within a predetermined period.
Solder material with excellent elongation at break in high-temperature environments. Provided are: a solder material containing 5.0% by mass or more and 10.0% by mass or less of Sb, 2.0% by mass or more and 6.0% by mass or less of Ag, 0.1% by mass or more and 0.5% by mass or less of Ni, 3.0% by mass or more and 8.0% by mass or less of Cu, and the remainder consisting of Sn and inevitable impurities; a solder bonding portion including a bonding layer in which the solder material is melted; and a semiconductor device including the bonding portion.
Provided is a semiconductor device comprising a semiconductor substrate having an upper surface and a lower surface, with a bulk donor distributed between the upper surface and the lower surface, that has a drift region of a first conductivity type provided thereon, the semiconductor device comprising a high-concentration region of a first conductivity type that is arranged between the drift region and the lower surface of the semiconductor substrate, includes a hydrogen donor, and has a carrier concentration that is higher than a bulk donor concentration, wherein the high-concentration region has a first portion in which a hydrogen donor concentration obtained by subtracting a bulk donor concentration from a carrier concentration is 7×1013/cm3 or more and 1.5×1014/cm3 or less, and a length of the first portion in a depth direction of the semiconductor substrate is 50% or more of a length of the high-concentration region.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Provided is a semiconductor device including a portion which operates as a transistor, in which the transistor includes a gate trench portion to which a gate voltage is applied, an emitter region in contact with the gate trench portion, and a base region in contact with the gate trench portion, and a threshold voltage at which the transistor transits from an off state to an on state in an ambient temperature of 25° C. is larger than a half of a first voltage for turning on the transistor.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A semiconductor device includes: a semiconductor chip including upper and lower surfaces and transistor regions and diode regions being arranged alternately with one another along the upper and lower surfaces; a lead frame containing copper disposed on the upper surface of the semiconductor chip; a plating layer containing nickel disposed on a semiconductor chip-side surface of the lead frame; a solder layer that contains tin and bonds the upper surface of the semiconductor chip to the plating layer; an insulated circuit board that is disposed on the lower surface of the semiconductor chip and has a wiring layer containing copper disposed on a semiconductor chip-side surface thereof; a plating layer containing nickel that is disposed on a semiconductor chip-side surface of the wiring layer; and a solder layer containing tin that bonds the lower surface of the semiconductor chip to the plating layer.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
36.
TERMINAL, METHOD FOR MANUFACTURING TERMINAL, AND SEMICONDUCTOR DEVICE
A terminal includes a plate-like first terminal component having a through hole and a second terminal component having a columnar portion at an end thereof. The columnar portion extends through the through hole and is exposed outside the first terminal component. The second terminal component is mechanically joined to the first terminal component at the columnar portion, which has plastic deformation. An outer surface of the columnar portion contacts an inner surface of the first terminal component that bounds the through hole. The through hole has a polygonal cross section orthogonal to an axis of the columnar portion.
The present invention prevents decreases in heat dissipation. A semiconductor device (1) includes: an insulating circuit board (20) having a lower surface (23a); a heat dissipation base plate (40) including a front surface (40a), and having a placement region (40b) where the lower surface (23a) of the insulating circuit board (20) is placed on the front surface (40a) via a solder (27); a plating film (41) which is formed on the front surface (40a) of the heat dissipation base plate (40) except for at a solder region where the solder (27) is spread over the placement region (40b) of the front surface (40a); and an alloy layer which is included between the solder (27) and the placement region (40b) of the heat dissipation base plate (40), and contains solder components contained in the solder (27). In particular, in the semiconductor device (1), the plating film (41) is formed on the entire surface of the heat dissipation base plate (40) excluding an open region (41a) that surrounds the outer perimeter of the periphery of the placement region (40b) where the insulating circuit board (20) is placed via the solder (27).
An electric power conversion apparatus comprising an inverter that converts input DC power into AC power and a control device that controls the inverter, wherein the control device preferentially limits one current, out of an effective current and a reactive current output from the inverter, more than the other current so that an apparent current output from the inverter is equal to or less than a limit value.
H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
39.
SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME
Provided is a method for manufacturing a silicon carbide semiconductor device, the method being capable of bringing an electrode into ohmic contact with a semiconductor layer made of silicon carbide without forming a silicide layer. The method for manufacturing a silicon carbide semiconductor device includes: a step for ion-implanting impurities into, on the upper surface thereof, a first semiconductor layer made of 4H-SiC silicon carbide at an angle of 30° or more but less than 90° with respect to a line normal to the upper surface of the first semiconductor layer, to form on the upper surface of the first semiconductor layer, a second semiconductor layer made of silicon carbide containing 3C-SiC at least on the upper surface side thereof; and a step for forming a main electrode on the upper surface side of the second semiconductor layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
An integrated circuit for a power supply circuit that generates an output voltage from an AC voltage. The power supply circuit includes a full-wave rectifier circuit rectifying the AC voltage, a filter receiving the rectified voltage, an inductor receiving a voltage from the filter, and a transistor controlling an inductor current flowing through the inductor. The integrated circuit is configured to switch the transistor, and comprises: a terminal configured to receive a first voltage corresponding to a sum of a first current, which flows from the filter to a ground, and the inductor current; and a switching control circuit configured to turn on the transistor in response to the inductor current becoming smaller than a predetermined value, and turn off the transistor such that a peak value of the sum and the rectified voltage have waveforms that are in phase, and are proportional in amplitude, to each other.
H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
A semiconductor module includes a wiring terminal having an insulating layer, first and second conductive layers sandwiching the insulating layer therebetween, and a semiconductor module. The insulating layer has an insulating peripheral side that extends more outwardly than a conductive peripheral side of each of the first and second conductive layers. The semiconductor module includes a semiconductor chip, first and second terminals respectively electrically connected to the semiconductor chip, and a fixing part. The first and second terminals include first and second end parts having first and second contact surfaces in contact with the first and second conductive layers, respectively. The fixed part has a basal surface facing the insulating peripheral side, having a recess between the first and second end parts into which the insulating peripheral side is inserted.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A semiconductor device includes a capacitor including a first connection terminal, a second connection terminal, and a second insulating member disposed between the first connection terminal and the second connection terminal, and a semiconductor module including a multi-layer terminal portion in which a first power terminal, a first insulating member, and a second power terminal are sequentially stacked. The first connection terminal and the second connection terminal extend to an outside, the first power terminal includes a first bonding area electrically connected to the first connection terminal, the second power terminal includes a second bonding area electrically connected to the second connection terminal, and the first insulating member includes a terrace portion extending from an end portion of the second power terminal toward the first connection terminal in a plan view of the semiconductor module.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01R 43/02 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
43.
SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
A semiconductor apparatus includes a flat portion disposed in a predetermined region containing a central depth position of a semiconductor substrate, between a fist peak disposed in an upper surface side of the semiconductor substrate and a second peak disposed in a lower surface side of the semiconductor substrate, and having a substantially flat concentration higher than a bulk donor concentration in a donor concentration distribution in a depth direction of a semiconductor substrate. The entire oxygen chemical concentration between the first peak and the second peak ranges from 3×1015 atoms/cm3 to 2×1018 atoms/cm3.
A geothermal power generation system according to one embodiment of the present invention comprises: a gas-liquid separator; a first pipe; a first valve that opens and closes the flow path of the first pipe; a second pipe; an analysis device; a control device that performs control for determining at least one chemical agent from among a plurality of chemical agent candidates on the basis of the result of analysis performed by the analysis device, and for supplying the chemical agent; a chemical agent supply port which is provided to the first pipe and through which the chemical agent is supplied; a third pipe that branches off the second pipe; a chemical agent recovery line that branches off the second pipe and is connected to the second pipe; a waste liquid recovery part, a scale separation part, a first chemical agent recovery part, an impurity separation part, a second chemical agent recovery part, a chemical agent purification part, and a regenerated chemical agent tank, which are provided in midcourse of the chemical agent recovery line sequentially from the upstream side; and a waste liquid adjustment device. The waste liquid adjustment device is connected to the scale separation part, the impurity separation part, and the chemical agent purification part.
C02F 5/00 - Softening waterPreventing scaleAdding scale preventatives or scale removers to water, e.g. adding sequestering agents
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
C02F 5/08 - Treatment of water with complexing chemicals or other solubilising agents for softening, scale prevention or scale removal, e.g. adding sequestering agents
C02F 5/10 - Treatment of water with complexing chemicals or other solubilising agents for softening, scale prevention or scale removal, e.g. adding sequestering agents using organic substances
F01D 25/00 - Component parts, details, or accessories, not provided for in, or of interest apart from, other groups
F01K 27/00 - Plants for converting heat or fluid energy into mechanical energy, not otherwise provided for
F03G 4/00 - Devices for producing mechanical power from geothermal energy
45.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a semiconductor device comprising an active portion and a temperature-sensitive portion. The temperature-sensitive portion includes: a temperature-sensitive trench part provided on a front surface side of the semiconductor substrate; a temperature-sensitive anode region provided inside a trench of the temperature-sensitive trench part; and a temperature-sensitive cathode region provided in contact with the temperature-sensitive anode region inside the trench of the temperature-sensitive trench part. Provided is a semiconductor device comprising: an active portion provided in a semiconductor substrate; a temperature-sensitive portion provided over the semiconductor substrate; and an interlayer insulating film provided over the active portion and the temperature-sensitive portion. The temperature-sensitive portion includes a recess region having a recess on a front surface side of the semiconductor substrate, and a temperature-sensitive diode portion provided over the semiconductor substrate in the recess region. The height position of the upper surface of the interlayer insulating film in the active portion in the depth direction of the semiconductor substrate is the same as the height position of the upper surface of the interlayer insulating film in the recess region.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
46.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The present invention provides a semiconductor device comprising an active part provided to a semiconductor substrate, and a temperature-sensitive part provided above the semiconductor substrate. The temperature-sensitive part has: a temperature-sensitive diode provided above the semiconductor substrate; a first interlayer insulation film provided above the temperature-sensitive diode; a temperature-sensitive contact portion provided extending from the upper surface to the lower surface of the first interlayer insulation film; and a housing portion provided below the temperature-sensitive contact portion. A bottom-surface corner section of the temperature-sensitive contact portion is in contact with the temperature-sensitive diode, and the bottom surface of the temperature-sensitive contact portion is in contact with the housing portion.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided is a semiconductor device comprising an active part and a temperature-sensitive part, the semiconductor device comprising: a semiconductor substrate; and an interlayer insulating film provided above the semiconductor substrate. The active part includes an active trench part provided on a front surface of the semiconductor substrate, and an active contact part provided in the interlayer insulating film above the active trench part. The temperature-sensitive part has a temperature-sensitive diode provided above the semiconductor substrate, and a temperature-sensitive contact part provided in the interlayer insulating film above the temperature-sensitive diode. The contact width of the temperature-sensitive contact part is larger than the contact width of the active contact part. In the depth direction of the semiconductor substrate, the extension depth of the temperature-sensitive trench contact portion extending from an upper surface of the temperature-sensitive diode in the depth direction of the semiconductor substrate is shallower than the extension depth of the plurality of active trench contact portions extending from the front surface of the semiconductor substrate in the depth direction of the semiconductor substrate.
Providing a semiconductor module, including: a laminated substrate; multiple semiconductor chips provided on the laminated substrate; a bonding wire connected to the multiple semiconductor chips; a housing which accommodates the multiple semiconductor chips, the bonding wire, and the laminated substrate; a first encapsulation layer which covers the multiple semiconductor chips, the bonding wire, and the laminated substrate inside the housing; a second encapsulation layer provided on the first encapsulation layer; and a third encapsulation layer provided on the second encapsulation layer. The first encapsulation layer is filled inside the housing up to a position higher than an upper surface of the bonding wire, and hardness of the second encapsulation layer is greater than hardness of the first encapsulation layer and less than hardness of the third encapsulation layer.
Provided is a circuit apparatus including a power conversion circuit and a transmission apparatus, the transmission apparatus transmitting a signal from the power conversion circuit, the power conversion circuit having an alarm signal generation unit which generates an alarm signal indicating whether the power conversion circuit is in a preset state, and a state signal generation unit which generates a state signal having an amplitude different from that of the alarm signal and indicating a state of the power conversion circuit. The power conversion circuit may further have an output terminal which outputs an output signal in which the alarm signal and the state signal are superimposed.
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
A semiconductor device, including: a semiconductor substrate including a first-conductivity-type region at a first main surface; a second-conductivity-type region selectively provided at the first main surface and extending in a first direction parallel to the first main surface; a first electrode provided at the first main surface, forming a Schottky junction with the first-conductivity-type region and being in contact with the second-conductivity-type region; and a second electrode provided on a second main surface. The first-conductivity-type region and the second-conductivity-type region includes a plurality of upper surface portions that are aligned in both the first direction and a second direction parallel to the first main surface and perpendicular to the first direction. Each of the upper surface portions forms a first step with another upper surface portion adjacent thereto in the second direction, and forms a second or third step with another upper surface portion adjacent thereto in the first direction.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A semiconductor device includes a wiring board, a semiconductor element disposed on the wiring board, and a lead having a bonding surface that is bonded to a main electrode of the semiconductor element by a bonding material. The main electrode includes a first pad and a second pad separated by an insulating layer extending in a first direction. The lead has at the bonding surface a recess that faces the main electrode so as to overlap the insulating layer and extends in the first direction. The recess has two outer ends in the first direction, one of which overlaps one end of the lead in plan view. The recess has a bottom surface that faces the main electrode of the semiconductor element, is not in contact with the bonding material and is continuous from the one of the two outer ends thereof to another end thereof in the first direction.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A geothermal power generation system including a binary power generation device having a medium evaporator comprises: a gas-liquid separator that separates geothermal water from geothermal fluid ejected from a production well; first piping that sends the geothermal water separated by the gas-liquid separator to the medium evaporator; a first valve that is provided to the first piping and opens and closes a flow path of the first piping; second piping that sends the geothermal water from which heat has been recovered by the binary power generation device from the medium evaporator to a reinjection well; an analysis device into which the geothermal water flowing through the second piping flows and which analyzes components of scale included in the inflow geothermal water; and a control device that determines at least one type of cleaning agent from among a plurality of types of cleaning agent candidates on the basis of the analysis result of the analysis device, and performs control to supply the selected cleaning agent, wherein the first piping has a cleaning agent supply port to which the cleaning agent is supplied on the downstream side of the first valve.
F03G 4/00 - Devices for producing mechanical power from geothermal energy
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
C02F 5/00 - Softening waterPreventing scaleAdding scale preventatives or scale removers to water, e.g. adding sequestering agents
C02F 5/08 - Treatment of water with complexing chemicals or other solubilising agents for softening, scale prevention or scale removal, e.g. adding sequestering agents
C02F 5/10 - Treatment of water with complexing chemicals or other solubilising agents for softening, scale prevention or scale removal, e.g. adding sequestering agents using organic substances
F01D 25/00 - Component parts, details, or accessories, not provided for in, or of interest apart from, other groups
F01K 27/00 - Plants for converting heat or fluid energy into mechanical energy, not otherwise provided for
A geothermal power generation system according to one aspect of the present invention comprises: a gas-liquid separator; a power generation device; a retention tank; a reinjection line; a reinjection pump; a chemical injection port provided in the reinjection line between the retention tank and the reinjection pump; a first chemical addition device that injects a chemical into the chemical injection port; a branch part that is provided in the middle of the reinjection line on the downstream side of the reinjection pump and above a reinjection well in the vertical direction, and branches a flow of the geothermal water; a first liquid analyzer; a scale piece collector; a dissolving agent addition device; and a control device that, on the basis of the analysis result of the first liquid analyzer, switches between injecting of the chemical and stopping of injection by the first chemical addition device, and switches between injecting of the dissolving agent and stopping of injection by the dissolving agent addition device.
F03G 4/00 - Devices for producing mechanical power from geothermal energy
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
C02F 5/00 - Softening waterPreventing scaleAdding scale preventatives or scale removers to water, e.g. adding sequestering agents
C02F 5/08 - Treatment of water with complexing chemicals or other solubilising agents for softening, scale prevention or scale removal, e.g. adding sequestering agents
C02F 5/10 - Treatment of water with complexing chemicals or other solubilising agents for softening, scale prevention or scale removal, e.g. adding sequestering agents using organic substances
F01D 25/00 - Component parts, details, or accessories, not provided for in, or of interest apart from, other groups
F01K 27/00 - Plants for converting heat or fluid energy into mechanical energy, not otherwise provided for
Provided is a circuit apparatus including a power conversion circuit, and a control circuit which controls the power conversion circuit, in which the power conversion circuit includes a control terminal to which a control signal from the control circuit is input, an output terminal from which an output signal is output to the control circuit, and a data identification unit which identifies an input data signal input to the output terminal. A first superimposed signal in which the output signal and the input data signal are superimposed on each other may be input to the data identification unit, and the data identification unit may identify the input data signal based on the first superimposed signal and the output signal.
H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
A pressure sensor apparatus, including: a substrate; a sensor provided on the substrate and configured to measure absolute pressure; a cover attached to the substrate to form a housing space, in which the sensor is housed, with the substrate; and a shield member. The cover is attached to the substrate with the shield member disposed therebetween and fully blocking passage of air therebetween. The cover has a hole through which the housing space communicates with an outside of the housing space.
G01L 19/00 - Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
G01L 19/06 - Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
A semiconductor module, including: a circuit board including a semiconductor element having an electrode on an upper surface thereof; a lead bonded to the electrode by a bonding material; and a sealing material that seals the semiconductor element and the lead. The lead includes: a bonding portion bonded to the electrode, the bonding portion having a lower surface facing the electrode, and an upper surface opposite to the lower surface, and a plurality of recesses formed on the upper surface of the bonding portion. In a plan view of the semiconductor module, the bonding portion has a plurality of sides, and each recess has a bottom surface of a planar shape, the planar shape having a side extending in a direction that is not orthogonal to any of the sides of the bonding portion. Each of the recesses a barbed portion protruding from a wall surface thereof.
A semiconductor module, including: a circuit board including a semiconductor element; a lead bonded to an electrode of the semiconductor element by a bonding material; and a sealing material sealing the semiconductor element and the lead. The lead includes: a bonding portion bonded to the electrode, and a roughening recess formed on an upper surface of the bonding portion. The roughening recess includes: a main recess having a first wall surfaces and a second wall surface opposite to each other, and a barbed portion formed on the first wall surface and protruding toward the second wall surface, and a sub-recess having: a center, which is located, in a plan view of the semiconductor module, outside the main recess and at a position away from the first wall surface by a predetermined distance, and an inclined surface that becomes shallower from the center toward an opening end of the main recess.
A method of manufacturing a vertical silicon carbide semiconductor device having an electrode on each of two main surfaces of a semiconductor chip in which an n-type low concentration buffer layer and an epitaxial layer are grown by epitaxy on a silicon carbide substrate. Defects extending from the silicon carbide substrate to the epitaxial layer and defects generated in the epitaxial layer during epitaxial growth are detected by a PL image of the n-type low concentration buffer layer; the defects generated in the epitaxial layer during the epitaxy are detected by a PL image of the epitaxial layer; the defects extending from the silicon carbide substrate to the epitaxial layer are detected by the difference between detection results; and semiconductor chips free of the defects extending from the silicon carbide substrate to the epitaxial layer are identified.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention ensures sufficient withstand voltage characteristics. A control conductive pattern (13d) includes a connection region (13d1) electrically connected to a control electrode (15a1), and, in a plan view, is adjacent to the opposite side of a chip region of a terminal region of an output conductive pattern (13c). Furthermore, the terminal region of the output conductive pattern (13c) has a recess (13c3) recessed from a first side to a second side on the +X direction side, in a plan view. The connection region (13d1) of the control conductive pattern (13d) is provided in the recess (13c3). The connection region (13d1) of the control conductive pattern (13d) is separated from the output terminal (63a).
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
60.
SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREFOR
A semiconductor module includes: a mounting board; a semiconductor chip mounted on the mounting board; a tubular support conductor mounted on the mounting board; a housing part that accommodates the mounting board, the semiconductor chip, and the support conductor; a connection terminal electrically connected to the semiconductor chip, the connection terminal including a first end portion press-fitted into the support conductor and a second end portion protruding from the housing part; and a conductive first joining part located between an inner wall surface of the support conductor and an outer wall surface of the connection terminal, and configured to join between the support conductor and the connection terminal.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/053 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
A semiconductor module includes: a heat radiation plate; a first insulating substrate disposed on a first surface of the heat radiation plate and having a semiconductor chip provided thereon; a frame-shaped case surrounding the first insulating substrate; external terminals provided across the inside and the outside of the case and electrically connected to the semiconductor chip via a bonding wire; and at least one second insulating substrate disposed between the heat radiation plate and the external terminals and having heat conductivity greater than that of the case. The second insulating substrate and the first surface of the heat radiation plate are bonded to each other by a heat conductive bonding material. Each external terminal and the second insulating substrate are joined to each other by press-fitting.
H01L 23/049 - ContainersSeals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
62.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a semiconductor device including: a semiconductor substrate including an active portion in which transistor portions and diode portions are alternately provided and provided with a plurality of trench portions extending in an extending direction of the transistor portion and the diode portion; an emitter electrode provided above a front surface of the semiconductor substrate; and a protective film of polyimide provided on an upper surface of the emitter electrode, wherein the diode portion includes a lifetime control region including a lifetime killer irradiated from a front surface side of the semiconductor substrate, wherein the active portion includes a protected region provided with the protective film and an unprotected region not provided with the protective film, and wherein the diode portion is included in the unprotected region and the protected region is included in the transistor portion.
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
A semiconductor module includes at least one substrate and semiconductor switching elements. The substrate includes a first electrode pattern, a second electrode pattern, and a third electrode pattern, in which the first electrode pattern is positioned between the second electrode pattern and the third electrode pattern in plan view. Each semiconductor switching element has a first surface to be joined to the first electrode pattern, and a second surface facing in an opposite direction to the first surface. On the second surface, a control electrode, a control line to be connected to the control electrode, and a main electrode including regions divided by the control line are provided. Each of the regions is electrically connected to the second electrode pattern via a first wire and is electrically connected to the third electrode pattern via a second wire. The second electrode pattern is a pattern for a principal current. The third electrode pattern is used as an auxiliary pattern for control.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/057 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body the leads being parallel to the base
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A semiconductor module, including: a semiconductor unit including first and second switching elements; a terminal structure including: a positive terminal electrically connected to a positive electrode of the first switching element, a negative terminal electrically connected to a negative electrode of the second switching element, a first insulating member sandwiched between the positive terminal and the negative terminal, and includes a protruding portion where a part of the first insulating member protrudes from between the positive terminal and the negative terminal, and second and third insulating members sandwiching the terminal structure and covering front and rear surfaces of at least a part of the protruding portion; and a case that is integrally molded with the terminal structure, and that houses the semiconductor unit.
H01L 23/043 - ContainersSeals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers
Provided is a semiconductor device comprising a diode portion, comprising: a plurality of trench portions provided at a front surface of a semiconductor substrate; a drift region of a first conductivity type provided on the semiconductor substrate; an anode region of a second conductivity type provided above the drift region in the diode portion; a first plug region of the second conductivity type provided above the drift region in the diode portion, which has a doping concentration higher than a doping concentration of the anode region; a front surface side electrode provided above the semiconductor substrate; and an interlayer dielectric film provided above a mesa portion provided between the plurality of trench portions; wherein the anode region is connected to the front surface side electrode on side surfaces of the plurality of trench portions.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A semiconductor device includes: an insulated circuit substrate including an insulating plate and a conductive plate provided on a top surface side of the insulating plate; a semiconductor chip provided on a top surface side of the conductive plate; a first external terminal electrically connected to the semiconductor chip; a first insulating member including a covering part covering a part of the first external terminal and a first engagement part provided on a top surface side of the covering part; a second external terminal provided on a top surface side of the first external terminal with the covering part interposed, and including a second engagement part so as to engage with the first engagement part; and a sealing resin provided to seal the semiconductor chip and partly seal each of the first external terminal, the first insulating member, and the second external terminal.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor device for operating an inductive load, including: a switching element having a control terminal, a low potential terminal and a high potential terminal; a drive circuit configured to apply a control voltage to the control terminal of the switching element to switching-drive the switching element, and operate the inductive load connected to the switching element; an extracting circuit configured to extract control terminal charges from the control terminal of the switching element when the switching element makes a transition from an on state to an off state; and a voltage control circuit connected to a connection point between the low potential terminal of the switching element and the inductive load, the voltage control circuit being configured to clamp a drop in a voltage at the connection point to a predetermined voltage while the extracting circuit is extracting the control terminal charges.
A beverage supply device 1 comprises a raw material box 51 in which a raw material is accommodated and stored, and which discharges the raw material to an extractor 30 by driving of a built-in raw material supply drive unit 51a, the beverage supply device 1 supplying a beverage produced with the extractor 30 to a cup C. The raw material box 51 includes: a delivery unit 511 having the built-in raw material supply drive unit 51a and delivering the raw material to the extractor 30 by driving of the raw material supply drive unit 51a; and an accommodation portion 512 which, by being engaged with the delivery unit 511 with a communication port 5122 of the accommodation portion 512 being in communication with an introduction port 5112 of the delivery unit 511, is disposed with a part thereof being exposed from a body cabinet 10, and is provided detachably with respect to the delivery unit 511. An operation unit 5115 for engaging and disengaging the accommodation portion 512 with or from the delivery unit 511 is disposed inside the body cabinet 10.
A47J 31/40 - Beverage-making apparatus with dispensing means for adding a measured quantity of ingredients, e.g. coffee, water, sugar, cocoa, milk, tea
Provided is a semiconductor device comprising: a drift region of a first conductivity type which is provided to a semiconductor substrate; an emitter region of the first conductivity type which is provided to a front surface of the semiconductor substrate and which has a higher doping concentration than the drift region; a plurality of trench parts which are provided above the drift region; a trench contact part which is provided to a mesa part between the plurality of trench parts; and a plug region of a second conductivity type which is provided in contact with a lower end of the trench contact part. The trench contact part may have a main trench contact which, in a plan view, extends in the trench extension direction, and a sub trench contact which, in a plan view, extends from the main trench contact in a direction differing from the trench extension direction.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
A semiconductor device, including: a switch element configured to receive an input signal, and to switch on and off according to the input signal; and a protection control circuit configured to receive an operating state signal from the switch element, and to protect the switch element according to the operating state signal, the operating state signal including one of a short-circuit pulse with a first pulse width, which is generated by the switch element in a short-circuit state, or a micro short-circuit pulse with a second pulse width shorter than the first pulse width, the protection control circuit protecting the switch element upon detecting consecutive occurrences of the micro short-circuit pulse.
A semiconductor module includes: a semiconductor element; a conductor pattern including a terminal contact portion electrically connected to the semiconductor element; a sealing body provided to seal the semiconductor element and including an upper surface from which the terminal contact portion is exposed; a case provided with an accommodating portion configured to accommodate the sealing body; and an elastic member that, when an external terminal is inserted, applies a pressing force from a surface of the inserted external terminal opposite to a surface in contact with the terminal contact portion. The case is provided with a first insertion portion into which the external terminal is inserted.
H01L 23/049 - ContainersSeals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
H01L 23/00 - Details of semiconductor or other solid state devices
Provided is a semiconductor apparatus, comprising: a first electrode arranged above the semiconductor substrate; a protective film having a portion provided above the first electrode; a solder portion arranged sandwiching the protective film in a first direction parallel to an upper surface of the first electrode, a leadframe fixed by the solder portion and arranged above the protective film; and a second electrode, wherein when a width of the protective film is denoted as W1, a length of the protective film is denoted as L1, an arithmetic average roughness of a surface of the protective film is denoted as Ra, a scatter index is denoted as I, and a distance between the protective film and the second electrode is denoted as Dmin, following equations are satisfied: I=((Ra/4)×L1)/(2×(W1×W1/π)0.5), Dmin>2.583×I−16599.
A semiconductor device includes: a semiconductor module including a semiconductor chip; a cooler configured to cool the semiconductor module; a thermal conductive layer interposed between the semiconductor module and the cooler; and a protective film covering: a boundary between the semiconductor module and the thermal conductive layer; and a boundary between the cooler and the thermal conductive layer, in which the protective film has a water absorption rate that is less than a water absorption rate of the thermal conductive layer.
The present invention provides a geothermal power generation system that can control deposition of silica scale. A geothermal power generation system includes: a production well; a steam separator that separates a geothermal fluid which is obtained from the production well, into steam and hot water; a turbine that is rotated by the steam separated by the steam separator; a reinjection well to which the geothermal fluid that has passed through the steam separator and/or the turbine is returned; a pH measurement system that extracts a part of the hot water separated by the steam separator and measures a pH of the hot water, and a first thermometer that measures a temperature of the hot water; an injection device that injects an alkaline chemical into the geothermal fluid; a second thermometer that measures a temperature of the geothermal fluid at a pH estimation point which is selected from the group consisting of an injection portion for the alkaline chemical, an outlet of the steam separator, and an inlet of the reinjection well; and a control device that controls the injection of the alkaline chemical by the injection device, on the basis of measurement results of the pH measurement system, the first thermometer, and the second thermometer.
Provided is a semiconductor device that has a plurality of gate trench portions electrically connected to a gate electrode, and a plurality of dummy trench portions electrically connected to an emitter electrode, and includes a first trench group that includes one gate trench portion and two dummy trench portions adjacent to the gate trench portion and adjacent to each other, and a second trench group that includes two gate trench portions adjacent to each other.
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
In the present invention, the cooling performance of a cooler applied to a semiconductor device is improved. A cooler (2) comprises: a top plate on a first surface of which a heat-dissipating surface is formed; a bottom plate that is disposed facing the top plate and that has a greater thickness than that of the top plate; a plurality of fins (210) connected to at least the top plate; and a peripheral wall part formed, between the top plate and the bottom plate, so as to surround the outer periphery of the plurality of fins. A refrigerant flow path (260) surrounded by the top plate, the bottom plate, and the peripheral wall part is formed, the refrigerant flow path having a refrigerant inflow port (251) provided toward one end in a first direction of the refrigerant flow path and a refrigerant outflow port (252) provided toward the other end thereof in the first direction. The plurality of fins each include an inclined portion that, in a first plan view when viewed from a second direction perpendicular to the first direction, extends in a direction of displacement toward the refrigerant inflow port as the distance from the first surface of the top plate increases and that, in a second plan view when viewed from the first direction, extends in a direction of displacement in the second direction as the distance from the first surface of the top plate increases.
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
A semiconductor device includes: an insulated circuit board including an insulating plate and a conductive layer provided on a top surface side of the insulating plate; a semiconductor chip provided on a top surface side of the conductive layer; a sealing resin sealing the semiconductor chip; and an external terminal electrically connected to the semiconductor chip and having a lower portion embedded in the sealing resin and an upper portion projecting above a top surface of the sealing resin.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
A semiconductor device includes: an insulated circuit substrate; a semiconductor chip provided on a top surface side of the insulated circuit substrate; a sealing resin provided so as to seal the semiconductor chip; a first external terminal electrically connected to the semiconductor chip so as to be exposed on a first side surface of the sealing resin; a second external terminal electrically connected to the semiconductor chip and having a part opposed parallel to the first external terminal on an upper side of the first external terminal so as to be exposed on a top surface of the sealing resin; and a first insulating member interposed between the first external terminal and the second external terminal.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
A semiconductor apparatus includes (i) semiconductor chips including a power semiconductor chip including a switch and a control semiconductor chip including a control circuit configured to control the switch, (ii) redistribution layers including a first redistribution layer that electrically connects a first semiconductor chip to a second semiconductor chip from among the semiconductor chips, (iii) a first sealing material that seals the semiconductor chips and the redistribution layers, (iv) an insulating substrate including a first conductor layer, a second conductor layer and an insulating layer between the first and second conductor layers, in which the insulating substrate is fixed to the first sealing material to be opposed to the semiconductor chips and the redistribution layers, and (v) a second sealing material that seals the insulating substrate and the first sealing material.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An integrated circuit for a power supply circuit that includes a transformer, a transistor and a capacitor. The power supply circuit generates an output voltage from an AC voltage. The integrated circuit drives the transistor, and includes: a terminal connected to the capacitor and receiving a power supply voltage; a mode detection circuit detecting whether an operation mode of the power supply circuit is a first mode or a second mode; a discharge circuit discharging the capacitor and lowering the power supply voltage to a first level, when the operation mode is the first mode; and a drive signal output circuit outputting, to the transistor, a drive signal that is at a level of the power supply voltage, and at a predetermined level lower than the level of the power supply voltage, when the operation mode is detected to be the first mode and the second mode, respectively.
H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
81.
SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE, AND VEHICLE
A semiconductor module includes a circuit board mounted on a base, a case having a sidewall and a lid and covering the circuit board, a plurality of conductive plates each parallel to a predetermined plane, electrically connected to different conductive patterns. The lid of the case has a partition that protrudes from an inner surface of the lid toward the base between two of the conductive plates. The partition has a first portion at a position where the partition and the conductive plates overlap each other, and a second portion at a position where the partition and the conductive plates do not overlap each other in a side view. The second portion has a cutout section disposed such that in a depth direction, a distance from the base to the second portion is greater than a distance from the base to the first portion.
A semiconductor device, including a semiconductor substrate, a transistor section and a diode section arranged in a predetermined arrangement direction and provided on the semiconductor substrate, is provided. The diode section includes a drift region of a first conductivity-type provided in the semiconductor substrate, a base region of a second conductivity-type extending to a height of an upper surface of the semiconductor substrate and provided above the drift region, first cathode regions of the first conductivity-type, and second and third cathode regions of the second conductivity-type. The first, second, and third cathode regions extend to a height of a lower surface of the semiconductor substrate in a depth direction and provided below the drift region. The first and second cathode regions are provided in contact with each other, alternating in the arrangement direction, and sandwiched between the third cathode regions in an extension direction orthogonal to the arrangement direction.
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The present invention provides a semiconductor device comprising: a transistor part; a current sensing part for detecting a current flowing in the transistor part; a gate pad provided above a semiconductor substrate; and a resistance adjustment part that is electrically connected to the gate pad and that adjusts the gate resistance of the transistor part and the current sensing part. The resistance adjustment part includes a main adjustment part that is electrically connected to a gate conductive part of the transistor part, and a sense adjustment part that is electrically connected to the gate conductive part of the current sensing part. Each of the main adjustment part and the sense adjustment part includes a diode element part having a plurality of diodes provided in reverse parallel, and a resistance part connected to the diode element part.
This cooler comprises: a heat dissipation substrate (210) including a first main surface (210S1) on which one or more semiconductor elements (10) are mounted and a second main surface (210S2) which has a fin part provided thereto; a case body (200) which is in close contact with the second main surface and accommodates the fin part; and a structural body (240). The case body includes a first wall part (200M1), a second wall part (200M2) facing the first wall part, an introduction port (204A) through which a refrigerant is introduced into the case body, and a discharge port (204B) which is positioned in the direction of a main line (L) from the first wall part toward the second wall part with respect to the introduction port and through which the refrigerant is discharged from the inside of the case body. The structural body takes in the refrigerant flowing in from the introduction port, guides the refrigerant in a guide direction that intersects the main line, and causes the refrigerant to flow out from a position corresponding to the fin part.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
A semiconductor module includes: a first semiconductor switching element including a first input electrode and a first output electrode; a second semiconductor switching element including a second input electrode and a second output electrode; an input part that receives an input of current; a first connection part that electrically connects the first input electrode and the input part; a second connection part that electrically connects the second input electrode and the input part; and an output part electrically connected to the first output electrode and the second output electrode. Each of the first connection part and the second connection part includes, as a current path, a variable resistive member comprising material with a positive temperature resistance coefficient higher than a temperature resistance coefficient of material of the input part.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
86.
pH ESTIMATION DEVICE AND pH ESTIMATION METHOD FOR SILICA-SUPERSATURATED FLUID
A pH of a fluid is estimated without using a pH meter. A pH estimation system for a silica-supersaturated fluid includes: a first flow path that branches off from a pipe in which a fluid containing silica flows, and extracts a part of the fluid; a first measurement unit that is connected to the first flow path via an on-off valve; a retention portion that is connected to the first flow path; a second flow path that is connected to the retention portion and returns the fluid to the pipe; a second measurement unit that is connected to the second flow path via an on-off valve; and a computing device that is electrically connected to the first measurement unit and the second measurement unit, wherein the first measurement unit and the second measurement unit include a fluid temperature measurement device and a silica concentration measurement device; and the computing device stores a relational expression of a rate of decrease in a silica concentration, a silica saturation concentration, a temperature and a pH, and calculates the pH of the fluid, on the basis of measurement results in the first measurement unit and the second measurement unit and the relational expression.
A beverage supply apparatus includes an extractor that feeds ground coffee beans and hot water into a cylinder to extract coffee. The apparatus supplies the coffee extracted by the extractor to a cup. The extractor includes a passage constituting member having a tubular shape and disposed in such a manner as to allow its interior to communicate with an upper surface opening of the cylinder to constitute a passage of the ground coffee beans and the hot water. The passage constituting member is elastically deformed by an external force to be able to close the passage.
A47J 31/36 - Coffee-making apparatus in which hot water is passed through the filter under pressure with hot water under liquid pressure with mechanical pressure-producing means
A47J 31/06 - Filters or strainers for coffee or tea makers
Provided is a semiconductor device for which a reduction in size can be achieved while maintaining insulation between terminals. According to the present invention, a case affixes a first terminal (10), a second terminal (20), and a first insulating member (30), while exposing respective exposure regions of the first terminal (10), the second terminal (20), and the first insulating member (30). A second insulating member (40) covers second portions (31a2, 31c2) that are less than or equal to a predetermined distance of the front surface of the exposure region of the second terminal (20) from terminal edge portions (11a, 11c) and a terminal outer end portion (11d) of the exposure region of the first terminal (10). The second portions (31a2, 31c2) of the first insulating member (30) extend outward from the terminal edge portions (11a, 11c) and the terminal outer end portion (11d) of the first terminal (10).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
A semiconductor device includes: a base body of a first conductivity-type; a first well region of a second conductivity-type provided in the base body and including a high-side circuit; a first voltage blocking region of the second conductivity-type provided along a circumference of the first well region; a second voltage blocking region of the first conductivity-type provided on an outer circumferential side of the first voltage blocking region; a first level shift element provided to encompass a part of the first voltage blocking region; a first isolation region of the first conductivity-type provided to surround a circumference of the first level shift element; and a field plate provided over the first voltage blocking region and the first isolation region with an insulating film interposed, the field plate having a first distance from the first isolation region greater than a second distance from the first voltage blocking region.
A semiconductor device, including: a stacked substrate; a plurality of semiconductor chips provided on the stacked substrate; an external output terminal; a circuit board configured to electrically connect the plurality semiconductor chips, and to electrically connect the plurality of semiconductor chips to the external output terminal, the circuit board having a first surface and a second surface opposite to each other, the second surface facing the stacked substrate; a sealing resin sealing the stacked substrate and the circuit board; and a plurality of flow velocity control pins attached to the circuit board, at the first surface of the circuit board.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
91.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a semiconductor device provided with a vertical element, where the vertical element has: a drift region of a first conductivity type provided in a semiconductor substrate; a first implantation portion provided below the drift region; and a second implantation portion provided below the drift region and having lower carrier implantation efficiency than the first implantation portion, an area of the first implantation portion is larger than an area of the second implantation portion at a back surface of the semiconductor substrate, and the vertical element has the first implantation portion and the second implantation portion which are alternately provided in a predetermined direction.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
To more effectively prevent separation of a contact unit at the time of short-circuit in an electromagnetic contactor. A capsule case is made of resin. A fixed yoke is arranged between a pair of fixed contact pieces, and at least a portion of the fixed yoke is held in a skeleton forming a capsule case. A movable yoke is disposed on a movable contact piece and is opposed to the fixed yoke. The fixed yoke and the movable yoke attract each other caused by a magnetic circuit being formed about an axis in a conduction direction in which current flows in the movable contact piece when a contact unit is closed.
A semiconductor device includes: a semiconductor substrate; a first metallic layer provided over the semiconductor substrate; a second metallic layer provided on the first metallic layer; and a protective film including an opening, the protective film being provided on the second metallic layer, in which the protective film is in contact with the second metallic layer, and is made of a resin material, the first metallic layer and the second metallic layer are each provided across a region that includes the opening in plan view, and the second metallic layer has a part interposed between the first metallic layer and the protective film.
H01L 23/528 - Layout of the interconnection structure
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
94.
SEMICONDUCTOR DEVICE HAVING A WIRE BONDING PAD STRUCTURE CONNECTED THROUGH VIAS TO LOWER WIRING
A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.
A semiconductor device including an active portion is provided, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a gate pad provided above the semiconductor substrate; an emitter electrode provided above the semiconductor substrate; a gate trench portion provided on a front surface of the semiconductor substrate in the active portion; and a gate wiring portion for connecting the gate pad and the gate trench portion; wherein the gate wiring portion has: a first gate trench wiring portion which extends in a predetermined direction; and a second gate trench wiring portion which extends in a different direction from the first gate trench wiring portion and intersects the first gate trench wiring portion at an intersection portion; and the emitter electrode is provided above the intersection portion.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A semiconductor device, including a circuit board, a case member, and first and second main terminals each having an outer terminal portion and an inner terminal portion. The case member includes a terminal arrangement portion having a recess formed between the outer terminal portions of the first and second main terminals and extending in a direction from a first end to a second end thereof, the first end being closer to a housing portion of the case member than the second end, and than first end portions of the outer terminal portions of the main terminals, and the second end being farther from the housing portion than second end portions of the outer terminal portion of the main terminals. A protrusion is formed on a wall surface of the terminal arrangement portion toward the housing portion, and is aligned with the recess and separates the recess and the housing portion.
H01L 23/053 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
A channel stopper electrode (52) and an n+-type channel stopper region (53) are respectively provided spaced apart from an outermost peripheral FLR (41) and an outermost peripheral FLR (41) outside a voltage-withstand structure (40). The n+-type channel stopper region (53) faces an inner end part (52a) of the channel stopper electrode (52) in a depth direction Z with an interlayer insulating film (21) therebetween. The width (L2) of an inner portion (53-1) of the n+-type channel stopper region (53) further inward than the inner end part (52a) of the channel stopper electrode (52) is less than or equal to half the distance (L1) between the channel stopper electrode (52) and one of the outermost peripheral FP (42) and the outermost peripheral FLR (41) of the voltage-withstand structure (40). The depth (d2) of the n+-type channel stopper region (53) is shallower than the depth (d1) of the FLR (41). Thus, a predetermined breakdown voltage of the semiconductor device (10) can be stably secured.
According to the present invention, a screw is securely fastened to a case. A molding space (61a) is composed of: a molding inner surface (60d2) which defines an outer frame and a housing region; a molding outer surface (60d1) which is provided on the outer side of the molding inner surface (60d2), and in which an injection port (60da) that is in communication with the molding space (61a) is formed so as to be inwardly separated from each end in a plan view; and a molding bottom surface (60d3) which connects the molding inner surface (60d2) and the molding outer surface (60d1) to each other, and is in contact with the lower surface of the outer frame. A mold pin part (62) is disposed at a corner part of the molding space (61a) in a plan view so as to be perpendicular to the molding bottom surface (60d3). During an injection step, a rod-shaped second mold component (64) is disposed in parallel to the mold pin part (62) at a position between the mold pin part (62) and the injection port (60da) in the molding space (61a) in a plan view, the position being closer to the molding inner surface (60d2) than to the molding outer surface (60d1).
H01L 23/08 - ContainersSeals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
A semiconductor device includes an active region, which is a region where main current flows, an edge termination region surrounding the active region, a step surface surrounding the edge termination region, and a dicing line surrounding the step surface. The active region has a first pn junction of a first semiconductor region and a second semiconductor layer and a second pn junction of an outer peripheral region and the second semiconductor layer. The step surface is provided with a first protective film for shielding light generated as forward current flows through the first and second pn junctions in the active region.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
100.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A semiconductor device includes a base plate that includes a body plate containing a silicon carbide, a metal-filled body having a top surface and a bottom surface opposite to each other and having a through hole, and a protective member disposed on the bottom surface of the metal-filled body and having a hardness less than a hardness of the body plate, an insulating board disposed on the base plate, a semiconductor element mounted on a top surface of the base plate via the insulating board, and a cooling member attached to a bottom surface of the base plate and fastened to the base plate with a screw that passes through the through-hole.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
