The proposed solution relates to a semiconductor device (30) comprising an epiwafer (10) and wherein a plurality of InGaN platelets (100), each InGaN platelet being monolithically grown on the epiwafer and configured with a top c-plane surface. An upper mask layer (200) is provided with mask apertures (220) over the InGaN platelets, wherein said mask apertures have a width which is smaller than said top c-plane surface. A plurality of microLED structures (240) comprising quantum well, QW, layers (242), are grown on the top c-plane surface in one of said mask apertures. The solution further relates to a microLED device (500) comprising the semiconductor device, and a method for fabricating the semiconductor device.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
A method for fabrication of an InGaN semiconductor template, comprising growing an InGaN pyramid having inclined facets on a semiconductor substrate; processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; growing InGaN, over the first upper surface, to form an InGaN template layer having a c-plane crystal facet forming a top surface. The InGaN semiconductor template is suitable for further fabrication of semiconductor devices, such as microLEDs configured to emit red, green or blue light.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
BGRR) over a surface of the epiwafer in the respective InGaN platelets (100), wherein said height correlates with emission wavelength. The solution further relates to a microLED device (800) comprising the semiconductor structure, and a method for fabricating the semiconductor structure.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
4.
Semiconductor device having a planar III-N semiconductor layer and fabrication method
A semiconductor device having a planar III-N semiconductor layer includes a substrate including a wafer and a buffer layer of a buffer material different from a material of the wafer, the buffer layer having a growth surface, an array of nanostructures epitaxially grown from the growth surface, a continuous planar layer formed by coalescence of upper parts of the nanostructures at an elevated temperature T, where the number of lattice cells spanning a center distance between adjacent nanostructures are different at the growth surface and at the coalesced planar layer, and a growth layer epitaxially grown on the planar layer.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
A method for fabrication of an InGaN semiconductor template, comprising growing an InGaN pyramid having inclined facets on a semiconductor substrate; processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; growing InGaN, over the first upper surface, to form an InGaN template layer having a c-plane crystal facet forming a top surface. The InGaN semiconductor template is suitable for further fabrication of semiconductor devices, such as microLEDs configured to emit red, green or blue light.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
6.
Forming a planar surface of a III-nitride material
A semiconductor device including a nanostructure, including a planar layer of a III-nitride semiconductor crystal, which layer includes an array of epitaxially grown nanowire structures, and semiconductor material which is redistributed from said nanowire structures in a reformation step after epitaxial growth, arranged to fill out a spacing between the nanowire structures, where the array of nanowire structures and the semiconductor material form a coherent layer.
A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A method for fabrication of an InGaN semiconductor template, comprising growing an InGa N pyramid having inclined facets on a semiconductor substrate; processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; growing InGaN, over the first upper surface, to form an InGaN template layer having a c-plane crystal facet forming a top surface. The InGaN semiconductor template is suitable for further fabrication of semiconductor devices, such as microLEDs configured to emit red, green or blue light.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
9.
Semiconductor device having a planar III-N semiconductor layer and fabrication method
A semiconductor device having a planar III-N semiconductor layer, comprising a substrate comprising a wafer (101) and a buffer layer (102), of a buffer material different from a material of the wafer, the buffer layer having a growth surface (1021); an array of nano structures (1010) epitaxially grown from the growth surface; a continuous planar layer (1020) formed by coalescence of upper parts of the nano structures at an elevated temperature T, wherein the number of lattice cells spanning a center distance between adjacent nano structures are different at the growth surface and at the coalesced planar layer; a growth layer (1030), epitaxially grown on the planar layer (1020).
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
10.
Forming a planar surface of a III-nitride material
A semiconductor device including a nanostructure, comprising a planar layer (1020) of a Ill-nitride semiconductor crystal, which layer includes an array of epitaxially grown nanowire structures (1010), and semiconductor material (1016) which is redistributed from said nanowire structures in a reformation step after epitaxial growth, arranged to fill out a spacing between the nanowire structures, wherein the array of nanowire structures and the semiconductor material form a coherent layer.
A semiconductor device having a planar III-N semiconductor layer, comprising a substrate comprising a wafer (101) and a buffer layer (102), of a buffer material different from a material of the wafer, the buffer layer having a growth surface (1021); an array of nano structures (1010) epitaxially grown from the growth surface; a continuous planar layer (1020) formed by coalescence of upper parts of the nano structures at an elevated temperature T, wherein the number of lattice cells spanning a center distance between adjacent nano structures are different at the growth surface and at the coalesced planar layer; a growth layer (1030), epitaxially grown on the planar layer (1020).
A semiconductor device including a nanostructure, comprising a planar layer (1020) of a Ill-nitride semiconductor crystal, which layer includes an array of epitaxially grown nanowire structures (1010), and semiconductor material (1016) which is redistributed from said nanowire structures in a reformation step after epitaxial growth, arranged to fill out a spacing between the nanowire structures, wherein the array of nanowire structures and the semiconductor material form a coherent layer.
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 40/00 - Manufacture or treatment of nanostructures
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first Ill-nitride material through a mask provided over a substrate; growing a second Ill-nitride semiconductor material on the seeds; planarizing the grown second semiconductor material to form a cohesive structure from the plurality of discrete base elements, said cohesive structure having a substantially planar upper surface.
A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
patents
