The present disclosure relates to the field of porous material synthesis, and particularly to a method for preparing porous aromatic framework membranes based on an inorganic salt template method. It aims at the problem of difficulty of preparation of porous aromatic framework membranes in large scale and large size. It uses alkynyl-containing building units and bromine-containing building units as raw materials and obtains continuous, dense, defect-free porous aromatic framework membranes through Sonogashira-Hagihara coupling polymerization. It specifically successfully prepares porous aromatic framework nanosheets on an inorganic salt substrate, and then produces a centimeter-scale large size continuous porous aromatic framework membrane through self-assembly. The method has mild conditions, a simple preparation process, and it is easy to operate. The prepared membranes have high yield and large area, and meet the requirements of actual industrial production.
B82B 3/00 - Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
C07C 211/54 - Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to two or three six-membered aromatic rings
C07C 215/74 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to carbon atoms of six-membered aromatic rings of the same carbon skeleton
C07D 231/12 - Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
The present disclosure provides a metamaterial absorber integrated long-wave infrared focal plane array (LWIRFPA), including: a resonator layer, a dielectric layer, and a metal layer. The resonator layer is of a sub-wavelength periodic resonator array structure, generates surface plasmon resonance (SPR), and is made of a metal or metalloid material. The SPR refers to propagating surface plasmon resonance (PSPR) or localized surface plasmon resonance (LSPR). By using corresponding shape and structural size of a resonator, the present disclosure achieves broadband absorption, narrow-band absorption, multi-wavelength absorption, polarization-selective absorption, etc. By integrating the metamaterial absorber on the IRFPA, not only can the absorptivity be improved, but also more functions can be achieved by the IRFPA.
Disclosed in the present invention is a method for breeding using tetraploid recombinant inbred lines obtained by hybridization/doubling of rice indica and japonica subspecies. The method of the present invention comprises: hybridizing indica rice with japonica rice; doubling the hybrid into a tetraploid; inbreeding the tetraploid and selecting tetraploid recombinant inbred lines having target traits; and obtaining, by means of chromosome set ploidy reduction, a diploid having target traits, i.e., a rice breeding material having targeted traits. According to the present invention, the sterility of F1 hybrids of indica rice and japonica rice is overcome; a tetraploid is taken, by using the high tolerance of the tetraploid to the instability of a genome, as a platform that can quickly induce a large number of genomic variations; tetraploid recombinant inbred lines having diverse phenotypes and genomes subject to genomic variations such as fragment exchange between partially homologous chromosomes are quickly obtained from inbred progenies of the tetraploid; diploid restorer lines induced by means of chromosome set ploidy reduction can mostly inherit the phenotypes and resistance characteristics of the parental tetraploid of the diploid restorer lines. The present invention has important significance for rice breeding.
A conformal organic field-effect transistor includes an elastic substrate, a gate electrode, a polymer insulating layer, an organic semiconductor layer, and a source electrode and a drain electrode from the bottom up, the source electrode and the drain electrode being embedded in the organic semiconductor layer. A method of forming the conformal organic field-effect transistor includes depositing an organic semiconductor on a substrate surface to form an organic semiconductor layer, the source electrode and the drain electrode are embedded in the organic semiconductor layer; then preparing the polymer insulating layer on a surface of the organic semiconductor layer; transferring the gate electrode from the substrate; forming hydroxyl groups on a metal electrode surface of the gate electrode, a polymer insulating layer surface of the source electrode, and a polymer insulating layer surface of the drain electrode, respectively; and then performing alignment and heating to obtain the conformal organic field-effect transistor.
H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H01L 27/28 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
5.
Pencil-like optical fiber sensor probe, portable immunosensor and use thereof
Changchun JingKeOuDe Science and Education Instrument Co., Ltd. (China)
Inventor
Yang, Li
Nie, Rongbin
Feng, Yunxiang
Feng, Chengwei
Abstract
The present invention discloses a pencil-like optical fiber sensor probe, including an inner tube, a light screening casing, a clamping device, an optical fiber and an optical probe; a portable immunosensor, including the pencil-like optical fiber sensor probe, an immersion immune response reagent strip, a touch-screen computer, a compact battery-powered sensitive photon counting detector and a case; and a use of the immunosens in detecting inflammatory markers. The design of the pencil-like optical sensor probe greatly simplifies the immune analysis process by combining the immersion immune response reagent strip. Each optical probe allows for up to 10 immunoassays, which reduces the experimental cost and avoids frequent replacement of the probe. The integrated detecting system is powered by battery which is suitable for in-situ analysis and detection. The sensor also has a high stability and sensitivity.
The present invention discloses a high-purity separation method of iron ions from an aqueous solution containing heavy metal ions, wherein after pretreatment of an aqueous solution containing heavy metal ions, sedimentation containing iron ions are collected, nitric acid or sulfuric acid is added for dissolution, and then a reducing agent is added to the dissolved solution; and after heating and sealing reaction, red sedimentation is generated at the bottom, The sedimentation has a high purity, and the residual amount of iron in the solution is less than 0.4 mg/L. In the method, iron ions in the solution can be converted to hematite crystals at a high purity, and the solution has an excellent retention rate of heavy metal ions, the reaction time is short, the separation efficiency is high, the operation is simple, and the cost is low.
2S is directly added to iron mud which is subjected to mechanical dehydration, and adjustment of pH value is not needed, therefore, the preparation method is convenient; and a supernatant can be recycled, thereby lowering preparation cost, and expanding an application range of the method.
Disclosed is application of emodin in inhibiting amyloid β-protein (Aβ) accumulation, improving cognitive and memory abilities, and reducing senile plaques. Alzheimer's disease (AD) is a neurodegenerative disease which is characterized in that nerve cell fibers are entangled, Aβ plaques are deposited, and a cognitive function is impaired to a pathological feature, and extracellular toxicity accumulation of Aβ is considered as one of main links of AD pathogenesis. In the present invention, it is discovered that emodin can obviously inhibit accumulation of an Aβ42 monomer and formation of fibers and inhibit formation of a β secondary structure, can improve spatial memory learning ability of an AD mouse, and can obviously clear amyloid plaques in APP/PS1 double-transgenic AD model mouse brain tissues. It shows that emodin can be applied to treatment of AD, and research and development of related medicaments.
A61K 31/122 - Ketones having the oxygen atom directly attached to a ring, e.g. quinones, vitamin K1, anthralin
A61P 25/28 - Drugs for disorders of the nervous system for treating neurodegenerative disorders of the central nervous system, e.g. nootropic agents, cognition enhancers, drugs for treating Alzheimer's disease or other forms of dementia
9.
SHAPE-ORIENTED ATTACHED ORGANIC FIELD-EFFECT TRANSISTOR AND TRANSISTOR ARRAY, AND PREPARATION METHOD THEREFOR
Disclosed are a shape-oriented attached organic field-effect transistor and a transistor array, and a preparation method therefor. The shape-oriented attached organic field-effect transistor successively comprises an elastic substrate, a gate electrode, a polymer insulating layer, an organic semiconductor layer, a source electrode and a drain electrode from bottom to top, the source electrode and the drain electrode being embedded in the organic semiconductor layer. The method comprises the following steps: depositing an organic semiconductor on a surface of a substrate provided with a source electrode and a drain electrode to form an organic semiconductor layer, so as to form the structure of the source electrode and the drain electrode being embedded in the organic semiconductor layer; then, preparing a polymer insulating layer on a surface of the organic semiconductor layer; transferring a gate electrode from the substrate; and respectively forming hydroxyls on a metal electrode surface of the gate electrode and a polymer insulating layer surface of the source electrode and the drain electrode, then performing alignment and heating to connect the gate electrode, the source electrode and the drain electrode into a whole, and finally transferring the whole from the substrate. In the present invention, photolithography technology and an organic semiconductor are successfully integrated together, a high-precision and complex organic field-effect transistor and a transistor array can be prepared, and a high level of integration is realized, thereby facilitating industrialized production.
H01L 51/40 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
10.
Application of ethyl p-methoxycinnamate and derivatives thereof in maintaining self-renewal and pluripotency of stem cells
Disclosed is a use of ethyl p-methoxycinnamate and derivatives thereof in preparing drugs, culture media, regulating agents or cosmetic and skin caring products for maintaining self-renewal and pluripotency of stem cells. The stem cells comprise adult stem cells, embryonic stem cells and induced pluripotent stem (iPS) cells. Also disclosed is a use of ethyl p-methoxycinnamate and the derivatives thereof in in-vitro amplification of stem cells and preparation of induced pluripotent stem (iPS) cells and a use of ethyl p-methoxycinnamate and the derivatives thereof in preparing drugs for treating cell deletion or injury diseases.
A61K 31/343 - Heterocyclic compounds having oxygen as the only ring hetero atom, e.g. fungichromin having five-membered rings with one oxygen as the only ring hetero atom, e.g. isosorbide condensed with a carbocyclic ring, e.g. coumaran, bufuralol, befunolol, clobenfurol, amiodarone
Provided is an abscisic acid-induced transcription repressor (ABA-induced transcription repressor, AITR) gene family, and an application thereof in increasing plant stress resistance. A mutant obtained by AITR gene knockout in Arabidopsis thaliana has enhanced resistance to abscisic acid and abiotic stress.
Disclosed is a mild preparation method for a diazomethane derivative. The preparation method for the diazomethane derivative comprises the following steps: benzenesulfonyl chloride having the structure of formula I undergoes a hydrazine reaction with water to produce benzenesulfonyl hydrazide having the structure of formula II; the benzenesulfonyl hydrazide having the structure of formula II is reacted with an aldehyde or a ketone having the structure of formula III to produce benzenesulfonyl hydrazone having the structure of formula IV; the benzenesulfonyl hydrazone having the structure of formula IV is mixed with an alkaline and an organic solvent and then undergoes a metathesis reaction to produce a diazomethane derivative having the structure of formula V, the derivative is not purified by isolation and is further used in a synthesis reaction and insertion reaction of a strained small ring. The present invention introduces an electron withdrawing group (EWG) on the benzene ring of the benzenesulfonyl hydrazone, and utilizes electronic effects and steric effects to facilitate the departure of the benzenesulfonyl on the benzenesulfonyl hydrazone, thus producing the diazomethane derivative in very mild conditions, specifically, at room temperature.
C07C 245/14 - Diazo compounds, i.e. compounds having the free valencies of N2 groups attached to the same carbon atom having diazo groups bound to acyclic carbon atoms of a carbon skeleton
The present invention provides an organic single crystal field effect circuit and method for preparing the same. The method comprises the steps of: preparing circuit masks; preparing a flexible planar embedded lamination electrode with the circuit patterns: 1) attaching octadecyl trichlorosilane on surface of a substrate; 2) preparing the source, drain and gate electrodes on the modified substrate, and attaching mercaptopropyl trimethoxysilane; 3) spin-coating polydimethyl siloxane on surfaces of the source, drain and gate electrodes, respectively; 4) removing the gate electrode spin-coated with polydimethyl siloxane, performing oxygen plasma treatment to the metal electrode surface of the gate electrode and polydimethyl siloxane surfaces of the source and drain electrodes, respectively, to form hydroxyl; 5) adjusting the source and the drain electrodes, attaching the gate, source and drain electrodes into an integration, thereby obtaining the flexible planar embedded lamination electrode; preparing the organic single crystal field effect circuit. The present invention prepares electrodes using photolithography technique with high precision such that patterns with high precision and high complexity can be prepared, which is convenient and practicable.
H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
14.
Multilayer flexible planar embedded laminated electrode and manufacturing method and application thereof
A flexible planar embedded laminated electrode can be manufactured by a method in which an octadecyl trichloro silane connected on the surface of a substrate; a source electrode, a drain electrode and a gate electrode are manufactured using photoetching; mercaptopropyl trimethoxysilane is connected at surfaces of metal electrodes of the source electrode, the drain electrode and the gate electrode; a polydimethylsiloxane is spin-coated on the respective surfaces for metal electrodes of the above electrodes; the gate electrode spin-coated with polydimethylsiloxane is removed from the substrate; oxygen plasma treatments are performed, so as to form hydroxy on the surfaces; the source electrode and the drain electrode are cut, and the gate electrode, the source electrode and the drain electrode are connected to form an integral to obtain the flexible planar embedded laminated electrode.
H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
15.
APPLICATION OF ETHYL P-METHOXYCINNAMATE AND DERIVATIVES THEREOF IN MAINTAINING SELF-RENEWAL AND PLURIPOTENCY OF STEM CELLS
Disclosed is an application of ethyl p-methoxycinnamate and derivatives thereof in preparing drugs, culture media, regulating agents or cosmetics and skin care products for maintaining self-renewal and pluripotency of stem cells. The stem cells comprise adult stem cells, embryonic stem cells and induced pluripotent stem (iPS) cells. Also disclosed is an application of the ethyl p-methoxycinnamate and the derivatives thereof to expansion in vitro of stem cells and preparation of iPS cells and an application of the ethyl p-methoxycinnamate and the derivatives thereof in preparing drugs for treating cell deletion or injury diseases.
Disclosed are a multilayer flexible planar embedded lamination electrode, and a preparation method and an application thereof. The preparation method comprises the steps of: connecting octadecyl trichlorosilane to a surface of a substrate; preparing a source electrode, a drain electrode and a gate electrode on the modified substrate; connecting mercaptopropyltrimethoxysilane to metal electrode surfaces of the source electrode, the drain electrode and the gate electrode; then, spin-coating polydimethyl siloxane on the metal electrode surfaces of the electrodes, respectively; transferring the gate electrode on which the polydimethyl siloxane is spin-coated from the substrate; treating the metal electrode surface of the gate electrode and the polydimethyl siloxane surfaces of the source electrode and the drain electrode, respectively, using oxygen plasma, so as to form hydroxyl groups on the surfaces; clipping the source electrode and the drain electrode; and connecting the gate electrode, the source electrode and the drain electrode to form a whole, so as to obtain the multilayer flexible planar embedded lamination electrode. In the present invention, a semiconductor and electrodes are combined together with an insulation layer by the function of electrostatic adsorption, so that the reutilization of the electrode can be achieved, thereby being suitable for organic single crystals having various sizes.
H01L 51/40 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
17.
ORGANIC SINGLE CRYSTAL FIELD EFFECT CIRCUIT AND PREPARATION METHOD THEREFOR
An organic single crystal field effect circuit and a preparation method therefor. The method comprises the steps of: preparing a circuit mask plate; preparing a flexible planar embedded lamination electrode with a circuit pattern: 1) connecting octadecyl trichlorosilane to a surface of a substrate; 2) preparing a source electrode, a drain electrode and a gate electrode on the modified substrate, respectively, and connecting mercaptopropyltrimethoxysilane; 3) spin-coating polydimethyl siloxane on metal electrode surfaces of the source electrode, the drain electrode and the gate electrode, respectively; 4) transferring the gate electrode on which the polydimethyl siloxane is spin-coated, and treating the metal electrode surface of the gate electrode and the polydimethyl siloxane surfaces of the source electrode and the drain electrode, respectively, using oxygen plasma, so as to form hydroxyl groups; and 5) clipping the source electrode and the drain electrode, and connecting the gate electrode, the source electrode and the drain electrode to form a whole, so as to obtain the flexible planar embedded lamination electrode; and preparing an organic single crystal field effect circuit. An electrode is prepared through the high-accuracy photolithography technology, so that a complex pattern can be prepared with high accuracy, thereby having convenience and practicality.
CHANGCHUN NORTHEAST NORMAL UNIVERSITY AND GENE ENGINEERING CO LTD (China)
NORTHEAST NORMAL UNIVERSITY (China)
Inventor
Li, Wenliang
Li, Yuxin
Sun, Luguo
Bao, Yongli
Shi, Jing
Wang, Chunhong
Shi, Weidong
Abstract
An antibacterial medical ultrasonic coupling agent and preparation method thereof, the weight percentage of the raw materials thereof being: 1-2% polyethyleneimine quaternary ammonium salt, 1-2% polyethylene glycol, 0.05-0.1% methylene blue, and the balance being distilled water; the preparation method is: proportionally mixing various raw materials with water; then stirring the mixture while heating to dissolve and swell the raw materials; and finally removing bubbles under vacuum decompression to obtain light blue gel product.
patents
