The invention relates to a device (100, 200, 300) for detecting crystalline defects in an off-axis monocrystalline substrate (10), wherein the normal (2) to the surface of the substrate (10) is tilted with respect to the crystallographic growth axis (3) by a tilt angle (4), the tilt angle (4) being contained in a plane, called angle plane, perpendicular to the surface, the device (100) comprising: - at least one detector (14, 14', 14a, 14b, 14c), - at least one illumination light source (12) configured to illuminate the substrate (10) with an illuminating light beam (13), the at least one illumination light source (12) being arranged in at least one of a first position and a second position, - at least one excitation light source (19) configured to illuminate the substrate with an excitation light beam (20) configured to produce an emission of photoluminescence light by the substrate (10), - imaging means (16, 17) configured to image the substrate (10) according to a field of view on the at least one detector(14, 14', 14a, 14b, 14c), said at least one detector producing at least one image of the substrate (10), and - processing means (18) configured to detect crystalline defects using said at least one image of the substrate (10), wherein the at least one illumination light source (12) and the imaging means (16, 17) are arranged in a dark-field configuration, and wherein in the first position, the at least one illumination light source (12) is arranged such that the illuminating light beam (13) is parallel or quasi-parallel to the angle plane (4), and in the second position, the at least one illumination light source (12) is arranged such that the illuminating light beam (13) is parallel or quasi-parallel to a plane, called perpendicular plane, containing the normal (2) to the surface and being perpendicular to the angle plane. The invention also relates to a method for detecting crystalline defects in an offaxis monocrystalline substrate.
The invention relates to a device (100) for detecting crystalline defects in an off-axis monocrystalline substrate (10), wherein the normal to the surface of the substrate (10) is tilted with respect to the crystallographic growth axis by a tilt angle, the tilt angle being contained in a plane, called angle plane, perpendicular to the surface of the substrate, the device (100) comprising: - a detector (14), - at least one illumination light source (12) configured to illuminate the substrate (10) with an illuminating light beam (13), said at least one 10 illumination light source (12) being arranged in at least one of a first position and a second position, - imaging means (16) configured to image the substrate (10) according to a field of view on the detector (14), said detector (14) producing at least one image of the substrate (10), and - processing means (18) configured to detect crystalline defects using said at least one image of the substrate, wherein the at least one illumination light source (12) and the imaging means (16) are arranged in a dark-field configuration, and wherein in the first position, the at least one illumination light source (12) is arranged such that the illuminating light beam is parallel or quasi-parallel to the angle plane, and in the second position, the at least one illumination light source (12) is arranged such that the illuminating light beam is parallel or quasi-parallel to a plane, called perpendicular plane, containing the normal to the surface of the substrate and being perpendicular to the angle plane. The invention also relates to a method for detecting crystalline defects in an off-axis monocrystalline substrate.
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
G01N 21/84 - Systems specially adapted for particular applications
3.
A METHOD AND A DEVICE FOR SPECTRAL DISPERSION COMPENSATION IN INTERFEROMETERS
The invention relates to a method (500) for acquiring an interference signal, comprising: - splitting an incident light wave into a first light wave and a second light wave propagating respectively in a first light path and a second light path of an interferometer, - adjusting an optical path difference between the first light wave and the second light wave, and - producing the interference signal by combining said first light wave and said second light wave on a detector, the method being characterized in that it further comprises: - measuring a spectral dispersion using the interference signal, and - compensating (505) said spectral dispersion by angularly positioning a dispersion compensation plate of dispersive material in a compensation angular position, with respect to an optical axis of the first light wave or the second light wave, to meet a spectral dispersion criterion. The invention further relates to an interferometer device implementing such a method.
The invention relates to a method (200, 300) for characterizing a structure (104) etched in a first surface (140) of a substrate (102), such as a wafer, said structure (104) extending along a longitudinal direction, z, into the 5 substrate (102), the method (200, 300) being implemented by a characterizing system (100) comprising a light source (130, 131) configured to emit an illumination beam with a wavelength adapted to be transmitted through the substrate (102), and an imaging device positioned to face a second surface (147) of the substrate (102) opposite to the first surface (140), the method (200, 300) comprising the following steps: - illuminating (202) at least one structure (104) with the illumination beam, - subsequently positioning (204) an object plane of the imaging device at least two different longitudinal positions; - acquiring (206) at least one image of the structure (104) at each of the longitudinal positions, the images being acquired through the substrate (102); - measuring (210) at least one lateral data relating to a lateral dimension of the structure (104) from the at least one acquired image at each of the longitudinal positions; and determining (212) at least one longitudinal data relating to a longitudinal shape of the structure from the lateral data of at least two longitudinal positions. The invention further relates to a system implementing such a method.
Method for discriminating defects present on a frontside of a transparent substrate from defects present on a backside of the substrate comprises disposing the substrate in an inspection system in which first and a second light beams intersect at a measurement spot on the frontside of the substrate. Relative movement of the substrate and measurement spot is controlled such that a reference plane is kept tangential to the measurement path. A first pattern is identified in a measurement signal, the first pattern corresponding to light scattered by a particle on the backside of the substrate and presenting two intensity peaks separated from each other by a determined separation interval corresponding to the time necessary for the defect to be moved over the distance separating two illumination spots on the backside of the substrate.
A device for detecting monocrystalline substrate defects, wherein a normal to the surface of the substrate is tilted by a tilt angle being contained in an angle plane, perpendicular to the surface, the device includes a detector, an illumination light source having a light beam, and arranged in a first position and/or a second position, an excitation light source illuminating the substrate and producing an emission of photoluminescence light by the substrate, imaging means imaging the substrate according to a detector field of view producing at least one image of the substrate, and processing means detecting crystalline defects using the substrate image, each illumination light source and the imaging means are arranged in a dark-field configuration, and in the first position, the illuminating light beam is parallel or quasi-parallel to the angle plane, and in the second position, the illuminating light beam is parallel or quasi-parallel to a perpendicular plane.
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
Inventor
Vienne, Guillaume
Hakobyan, Davit
Genevet, Patrice
Abstract
The invention relates to an inspection device (100, 200, 300, 400, 500) for detecting defects on substrates, such as wafers, comprising : - an illumination module (10) comprising at least one light source (12) configured to illuminate at least one region of a substrate (30) to be inspected with at least one illumination beam (20, 21); - at least one detector (51, 52, 53, 54, 54-1, 54-2, 55, 55-1, 55-2, 56-1, 56-2) configured to detect light issued from the substrate (30) and to produce an inspection signal; - a light collection module; and - a processing module configured to produce an inspection information from the inspection signal, wherein the light collection module comprises at least one collection lens (40) with a nanostructured surface (90), the nanostructured surface (90) comprising at least one light collection region (91, 92, 92', 93, 94, 95, 96, 97, 98) configured to collect light issued from the substrate (30) within a predetermined solid angle (81, 82, 83, 84, 85) and to direct the collected light towards a corresponding detector (51, 52, 53, 54, 54-1, 54-2, 55, 55-1, 55- 2, 56-1, 56-2), a light collection region and a corresponding detector forming a collection channel (61, 62, 63, 64, 65, 66, 67, 68).
The invention concerns an adapter (1) for retaining a wafer (W). The adapter backside (1b) is intended to be placed on, and to extend over, a first suction channel (C1) and a second suction channel (C2) disposed on a main face (S1) of a support (S). The adapter (1) comprises a shallow recess (2) disposed on the frontside (1a) to receive the wafer (W), the shallow recess (2) being shaped to the wafer size and presenting a flat base (2b) to contact a surface of the wafer (W). The adapter (1) also comprises a vaccum network extending through the adapter (1) and comprising at least one through passage (6a;6b,6c;6d,6e) connecting the adapter backside (1b) and the adapter frontside (1a), the through passage (6a;6b,6c;6d,6e) opening out, on the frontside (1a), in the shallow recess (2a). The through passage (6a;6b,6c;6d,6e) is intercepting, on the backside (1b), the first suction channel (C1) of the support (S) but not the second suction channel (C2).
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
9.
Method and a system for characterizing structures through a substrate
A method for characterizing a structure etched in a first substrate surface, the structure extending along a longitudinal direction, z, into the substrate, the method implemented by a system including a light source emitting an illumination beam with a wavelength transmitted through the substrate, and an imaging device positioned to face a second substrate surface opposite the first surface, the method including illuminating at least one structure with the illumination beam, subsequently positioning an object plane of the imaging device at at least two different longitudinal positions; acquiring at least one image of the structure at each of the longitudinal positions, the images being acquired through the substrate; measuring data relating to a lateral dimension of the structure from each acquired image at each of the longitudinal positions; and determining longitudinal data relating to a longitudinal shape of the structure from the lateral data of at least two longitudinal positions.
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01B 11/26 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes
An adapter for retaining a wafer has a back side intended to be placed on, and to extend over, a first suction channel and a second suction channel disposed on a main face of a support. The adapter has a shallow recess disposed on the front side to receive the wafer, the shallow recess being shaped to the wafer size and having a flat base to contact a surface of the wafer. The adapter also includes a vacuum network extending through the adapter and comprising at least one through-passage connecting the adapter back side and the adapter front side, the through-passage opening out, on the front side, in the shallow recess. The through-passage intercepts, on the back side, the first suction channel of the support but not the second suction channel.
A method for characterizing structures etched in a substrate, such as a wafer is disclosed. A bottom of the structure is embedded in the substrate, the substrate having a top side in which the structures are etched and a bottom side opposite to the top side. The method includes the following steps: illuminating the bottom of at least one structure with an illumination beam issued from a light source emitting light with a wavelength adapted to be transmitted through the substrate, acquiring, with an imaging device positioned on the bottom side of said substrate, at least one image of a bottom of the at least one structure through the substrate, and measuring at least one data, called lateral data, relating to a lateral dimension of the bottom of the at least one HAR structure from the at least one acquired image. A system implementing such a method is also disclosed.
The invention concerns a measurement system (MS) and an inspection method for detecting a defective bonding interface in a sample substrate (1) comprising at least one element (3) disposed on a support (2). According to the invention, the method comprising: a providing step (S1) of placing the sample substrate (1) in the measurement system (MS), a measuring step (S2) of establishing an inclination map of the exposed surface (1a), an analyzing step (S3) of the inclination map for identifying a zone or zones of the exposed surface whose inclinations deviate by more than a given threshold from the inclination of the reference surface; and a decision step (S4) of detecting the presence of a defective bond between the element (3) and the support (2), depending on the result of the analyzing step (S3).
A measurement system and an inspection method for detecting a defective bonding interface in a sample substrate including at least one element disposed on a support. The method comprises: placing the sample substrate in the measurement system, establishing an inclination map of the exposed surface, analyzing the inclination map and identifying a zone or zones of the exposed surface whose inclinations deviate by more than a given threshold from the inclination of the reference surface; and detecting the presence of a defective bond between the element and the support, depending on the result of the analysis of the inclination map.
The invention concerns A system (1) for optical inspection of a substrate (3). The system comprises an illumination device defining an inspection area (I) on the substrate (3), a support (2) to receive the substrate (3), and a detection device defining a detection area (D) on the substrate (3). According to the invention, the inspection area (I) is positioned ahead, with respect to the scanning direction (SD), of at least a portion of the detection area (D).
A system for optical inspection of a substrate. The system comprises an illumination device defining an inspection area on the substrate, a support to receive the substrate, and a detection device defining a detection area on the substrate. The inspection area is positioned ahead, with respect to the scanning direction, of at least a portion of the detection area.
A method for characterising high aspect ratio (“HAR”) structures etched in a substrate includes, for at least one structure, an interferometric measurement step, carried out with a low-coherence interferometer positioned on a top surface of the substrate, for measuring with a measurement beam, at least one depth data relating to a depth of the HAR structure, and a first adjusting step for adjusting a diameter, at the top surface, of the measurement beam according to at least one top critical dimension (“top-CD”) data relating to a width of the HAR structure.
G01B 11/04 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness specially adapted for measuring length or width of objects while moving
H01L 21/66 - Testing or measuring during manufacture or treatment
17.
Method and a system for characterising structures through a substrate
A method for characterizing structures etched in a substrate, such as a wafer is disclosed. The method includes the following steps: illuminating the bottom of at least one structure with an illumination beam issued from a light source emitting light with a wavelength adapted to be transmitted through the substrate, acquiring, with an imaging device positioned on the bottom side of said substrate, at least one image of a bottom of the at least one structure through the substrate, and measuring at least one data, called lateral data, relating to a lateral dimension of the bottom of the at least one HAR structure from the at least one acquired image. A system implementing such a method is also disclosed.
The invention relates to a method (200, 300, 400) for characterizing structures (104) etched in a substrate (102), such as a wafer, the method (200, 300) comprising the following steps: - illuminating (202) the bottom (105) of at least one structure (104) with an illumination beam issued from a light source (130) emitting light with a wavelength adapted to be transmitted through the substrate (102), - acquiring (204, 206), with an imaging device (120, 122, 124) positioned on the bottom side (108) of said substrate (102), at least one image of a bottom (105) of said at least one structure (104) through the substrate (102), and - measuring (210) at least one data, called lateral data, relating to a lateral dimension of the bottom (105) of said at least one HAR structure (104) from the at least one acquired image. The invention further relates to a system implementing such a method.
A method and system implementing the method for characterising structures etched in a substrate, such as a wafer, includes at least one structure etched in the substrate, an imaging step including the following steps: capturing, with an imaging device positioned on the top surface of the substrate, at least one image of a top surface of the substrate, and measuring a first data relating to the structure from at least one captured image, at least one interferometric measurement step, carried out with a low-coherence interferometer positioned on the top surface, for measuring with a measurement beam positioned on the structure, at least one depth data relating to a depth of the structure; and a first adjusting step for adjusting the measurement beam according to the first data.
The invention relates to a method (200) for characterising structures etched in a substrate, such as a wafer, said method (200) comprising, for at least one structure: - at least one interferometric measurement step (106,108), carried out with a low-coherence interferometer positioned on the top side of said substrate, for measuring with a measurement beam, at least one depth data relating to a depth of said HAR structure; wherein said method (200) also comprising a first adjusting step (104) for 10 adjusting a diameter, at said top surface, of the measurement beam according to at least one top-CD data relating to a width of said HAR structure. The invention further relates to a system implementing such a method.
A method and related system for measuring a surface of a substrate including at least one structure using low coherence optical interferometry, the method being implemented with a system having an interferometric device, a light source, an imaging sensor, and a processing module, the method including: - acquiring, with the imaging sensor, an interferometric signal formed by the interferometric device between a reference beam and a measurement beam reflected by the surface at a plurality of measurement points in a field of view; the following steps being carried out by the processing module: classifying, by a learning technique, the acquired interferometric signals according to a plurality of classes, each class being associated with a reference interferometric signal representative of a typical structure; and analysing the interferometric signals to derive information on the structure at the measurement points, as a function of the class of each interferometric signal.
The invention concerns a device and method for discriminating defects present on a frontside of a substrate from defects present on a backside of the substrate, the substrate being made of a material transparent at an inspection wavelength. It comprises disposing the substrate in an inspection system comprising at least one optical source coupled to an optical system the substrate being disposed on a support and being positioned with respect to the optical system such that a first and a second light beams intersect at a measurement spot on the frontside of the substrate, and controlling the relative movement of the support and of the optical system to scan the measurement spot along a measurement path on the frontside of the substrate, the relative movement being controlled such that the reference plane is kept tangential to the measurement path. The method further comprises identifying in a signal a first pattern corresponding to the light scattered by a particle on the backside of the substrate and presenting two intensity peaks separated from each other by a determined separation interval corresponding to the time necessary for the defect (P) to be moved over the distance (d) separating the two illumination spots (S1, S2).
A method includes: determining height Z1 of a focus by an optical microscope having autofocus function which uses irradiation light of wavelength λ0 to adjust the focus; determining a wavelength λ1 of irradiation light used for obtaining observation image of second thin film; obtaining observation image of second thin film by using irradiation light of the wavelength λ1, while altering heights of the focus with the Z1 as reference point; calculating standard deviation of reflected-light intensity distribution within the observation image, obtaining height Z2 of the focus corresponding to a peak position where standard deviation is greatest, and calculating a difference ΔZ between Z1 and Z2; correcting the autofocus function with ΔZ as a correction value; and using the corrected autofocus function to adjust the focus, obtaining the observation image of the second thin film, and calculating the film thickness distribution from the reflected-light intensity distribution within the observation image.
The invention relates to a method employing a device (1) for inspecting a surface (S) of an object. The device comprises a polychromatic light source (20) for projecting an inspection beam onto the surface (S); a confocal mask (6a, 6b) that intercepts the inspection beam and a beam reflected by the surface, and that comprises a plurality of color-filtering apertures; a chromatic system (3) that spatially spreads the focus of the inspection beam over focal planes spread out along an optical axis (AO) in a depth of field, and that intercepts the reflected beam so as to project it onto a detection plane (P) conjugated with the focal planes; a movable holder (4) for positioning the surface (S) in the depth of field; a time-delay and integration image sensor (5) synchronised with the movement of the surface, the image sensor (5) comprising a matrix array of photodetectors placed in the detection plane (P), the color-filtering apertures of the confocal mask illuminating some of the photodetectors.
A method for measuring a surface of an object including at least one structure using low coherence optical interferometry, the method including the steps of acquiring an interferometric signal at a plurality of measurement points in a field of view and, for at least one measurement point, attributing the interferometric signal acquired to a class of interferometric signals from a plurality of classes, each of the classes being associated with a reference interferometric signal representative of a typical structure; and analysing the interferometric signal to derive therefrom an item of information on the structure at the measurement point, as a function of its class.
A device for dark-field optical inspection of a substrate comprises: a light source for generating an incident beam that is projected onto an inspection zone of the substrate and that is capable of being reflected in the form of diffuse radiation; at least one first and one second collecting device; and a reflecting device for directing at least a portion of the diffuse radiation originating from a focal point of collection coincident with the inspection zone in the direction of the collecting devices, with a first and second reflective zone from which a first portion of the diffuse radiation is directed toward a first focal point, which is optically conjugated with the focal point of collection, and a second portion of the diffuse radiation is reflected toward a second focal point, which is optically conjugated with the collection focal point and distinct from the first focal point of detection.
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ALTERNATIVES (France)
Inventor
Boulanger, Jean-François
Godny, Stéphane
Abstract
A method and related device for measuring the profile of a surface of an object to be measured having zones made from at least two different materials, the object to be measured forming part of a plurality of substantially identical objects, the plurality of objects also including at least one reference object having at least one reference surface, the method including the following steps: determining a correction function, from a first profile signal of a first reference surface and a second profile signal from a second reference surface, the second reference surface being metallized; acquiring a profile signal from the surface of the object to be measured; and applying the correction function to the profile signal from the surface of the object to be measured to obtain a corrected profile signal; the profile signals being obtained from interferometric measurements.
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
29.
Method and system for optically inspecting a substrate
A method and related system for substrate inspection, includes: creating, based on two light beams originating from one light source, a measurement volume at the intersection between the two light beams, the measurement volume containing interference fringes and being positioned to extend into the substrate, the substrate moving relative to the measurement volume in a direction parallel to a main surface S of the substrate; acquiring a measurement signal representative of the light scattered by the substrate, as a function of the location of the measurement volume on the substrate; calculating at least one expected modulation frequency, of an expected signal representative of the passage of a defect of the substrate through the measurement volume; determining values representative of a frequency content of the measurement signal close to the modulation frequency, to constitute a validated signal representative of the presence of defects; and analyzing the signal to locate and/or identify defects.
The present invention is a method for measuring the film thickness distribution of a second thin film in a wafer having a substrate, a first thin film on an obverse surface thereof, and a second thin film on the first thin film, the method including: carrying out focusing using radiated light having a wavelength λ0 by using an optical microscope that has an auto-focusing function to derive the height Z1 of a focal point; determining the wavelength λ1 of radiated light used in acquiring an observation image of the second thin film; using the radiated light having the wavelength λ1 to acquire the observation image of the second thin film while changing the height of the focal point with reference to Z1; calculating the standard deviation of a reflected-light intensity distribution within the observation image, acquiring the height Z2 of the focal point corresponding to a peak position at which the standard deviation is maximized, and calculating the difference ΔZ between Z1 and Z2; correcting the auto-focusing function by using ΔZ as a correction value; and carrying out focusing using the corrected auto-focusing function to acquire an observation image of the second thin film and calculating the film thickness distribution from the reflected-light intensity distribution within the observation image. There is thereby provided a method with which it is possible to highly precisely and stably measure the film thickness distribution.
A device (1) for inspecting a surface (S) of an object, the device comprising a polychromatic light source (20) for projecting an inspection beam onto the surface (S); a confocal mask (6a, 6b) intercepting the inspection beam and a beam reflected by the surface, having a plurality of chromatic filtering openings; a chromatic system (3) spatially spreading the focusing of the inspection beam over focusing planes along an optical axis (AO) in a depth of field, intercepting the reflected beam so as to project it onto a conjugated detection plane (P) of the focusing planes; a movable support (4) for positioning the surface (S) in the depth of field; a timed integration image sensor (5) synchronised with the movement of the surface, the image sensor (5) comprising a matrix of photodetectors disposed in the detection plane (P), the chromatic filtering openings of the confocal mask illuminating part of the photodetectors.
The invention relates to a method (100) for measuring a surface of an object (17) comprising at least one structure (41, 42) using low-coherence optical interferometry, the method (100) comprising the following steps: - acquiring (102) an interferometric signal at a plurality of points, called measuring points, on said surface in a field of view; for at least one measuring point: - assigning (104) the acquired interferometric signal to a category of interferometric signals from among a plurality of categories, each category being associated with a reference interferometric signal representing a standard structure; and - analysing (114) the interferometric signal in order to derive information therefrom relating to the structure at the measuring point, as a function of its category. The invention also relates to a measuring system implementing the method according to the invention.
The invention relates to a dark-field optical device (1) for inspecting a substrate (3), such as a wafer for electronics, optics or electronics, comprising: • - a light source (4) for generating at least one incident illuminating beam (4a; 4a', 4a") that is projected onto an inspection zone (P) of the substrate (2), and that is liable to be reflected therefrom in the form of diffuse radiation (5); • - at least one first and one second collecting device (7a, 7b); and • - a reflecting optical device (6) for directing at least one portion of the diffuse radiation (5) issued from a collection optical focal point (F) coincident with the inspection zone (P) in the direction of the collecting devices (7a, 7b), with a first and second reflective zone (6a) from which are reflected a first portion of the diffuse radiation (5) toward a first detection optical focal point (Fa), which is optically conjugate with the collection optical focal point (F), and a second portion of the diffuse radiation (5) toward a second detection optical focal point (Fb), which is optically conjugate with the collection optical focal point (F) and separate from the first detection optical focal point (Fa).
The present invention relates to a lighting device (1, 100) for an imaging system having an imaging lens (2), comprising: a sleeve (10) configured to be positioned around said imaging lens (2); at least one optical fibre (14) rigidly connected to said sleeve (10) and arranged to guide light coming from at least one light source; and a directing means (17, 17') configured to orient a light beam emitted by the at least one optical fibre (14) so as to light a field of view of the imaging system along a lighting axis forming an angle relative to the optical axis of the lens (2) that is larger than the numerical aperture of the imaging system. The invention also relates to an imaging system using this device.
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
Inventor
Boulanger, Jean-François
Godny, Stéphane
Abstract
The present invention relates to a method (100) for measuring the profile of a surface (400) of an object (300) to be measured, particularly comprising zones made of at least two different materials, the object (300) to be measured being part of a plurality of substantially identical objects, the plurality of objects further comprising at least one reference object (304, 306) which has at least one reference surface, the method (100) comprising the steps of: - establishing (102) a correction function, on the basis of a first profile signal of a first reference surface and a second profile signal of a second reference surface, the second reference surface being metal-coated; - acquiring (110) a profile signal of the surface of the object to be measured; and - applying (116) the correction function to the profile signal of the surface (400) of the object (300) to be measured in order to obtain a corrected profile signal; the profile signals being obtained from interferometric measurements (104, 112). The invention also relates to a device for measuring the profile of a surface of an object using such a method.
at least one second means apparatus for positioning the support in the vertical direction against, or by cooperation with, the lower base.
Also provided is an inspection equipment for an integrated circuit wafer implementing such a positioning device.
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
38.
METHOD AND SYSTEM FOR OPTICALLY INSPECTING A SUBSTRATE
The present invention relates to a method (100, 200) for inspecting a substrate (2) and to an inspection system implementing such a method, the method comprising steps of: creating a measurement volume at the intersection between two light beams (4, 5) originating from the same light source (20) and containing interference fringes, said substrate (2) moving relative to said measurement volume; acquiring (102, 202) a measurement signal representative of the light diffused by the substrate (2); computing (108, 208) at least one expected modulation frequency of an expected signal representative of the passage of a fault (3) in the measurement volume; determining (114, 214) characteristic values representative of a frequency content of the measurement signal in a vicinity, so as to form a validated signal representative of the presence of faults (3); and analysing said validated signal in order to locate and/or identify faults (3).
A multichannel confocal sensor comprises a light source (14),a focusing lens arrangement (10), and an optical detector (25). This sensor further includes: - a first integrated optics circuit (11) arranged for splitting a light beam (24) coming from said broadband light source into a plurality of emitted light beams applied to a high-density array of emitting apertures (29), - a second integrated optics circuit (20) arranged for collecting on a plurality of collection apertures (18) a plurality of reflected light beams from a sample to be inspected (17) and for transferring said reflected light beams to the optical detector (25), - a beam splitter (22) arranged (i) for directing said emitted light beams from the first integrated optics circuit (11) to the inspected substrate (17) through the focusing lens arrangement (10) and (ii) for directing the reflected light beams from the inspected sample (17) through the focusing lens arrangement (10) into the second integrated optics circuit (20).
The invention relates to a method for reconstituting colour information of a sample measured by white light optical profilometry, comprising an acquisition (21) of interferograms at a plurality of points or pixels of said sample, said method also comprising, for at least one measurement point: - calculating (22) the optical spectral density of the interferogram, - determining a spectral reflectance from said optical spectral density, and - processing (24) said spectral reflectance to generate colour information of said sample (17).
The present invention relates to a positioning device (100) for positioning an integrated circuit board (W), comprising: - a base (102), referred to as the upper base, and a base (106), referred to as the lower base, arranged at a separation from one another in a direction (Z), referred to as the vertical direction, in such a way as to leave a free space between said bases (102, 106); - a support (110), capable of moving between said upper (102) and lower (106) bases, and comprising a receiving location (112) for receiving said circuit board (W) to be inspected; - at least a first positioning means (118) for positioning said support (110) in the vertical direction (Z) against, or cooperating with, said upper base (102); and - at least one second positioning means (122) for positioning said support (110) in the vertical direction (Z) against, or cooperating with, said lower base (106). The invention also relates to an apparatus for inspecting an integrated circuit board utilising such a positioning device.
G01R 31/28 - Testing of electronic circuits, e.g. by signal tracer
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
43.
Device and method for surface profilometry for the control of wafers during processing
A device or apparatus is provided for carrying out measurements of shape on a first surface of a wafer relative to structures present beneath the first surface including (i) profilometry apparatus arranged in order to carry out measurements of shape on the first surface of the wafer according to at least one measurement field; (ii) imaging apparatus facing the profilometry apparatus and arranged in order to acquire a reference image of the structures on or through a second surface of the wafer opposite to the first surface according to at least one imaging field; the profilometry apparatus and said imaging apparatus being arranged so that the measurement and imaging fields are referenced in position within a common frame of reference.
A method is also provided to be implemented in this device or this apparatus.
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
G01B 21/30 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
The present invention relates to a method (100) for inspecting and measuring a face of an object comprising at least two surfaces that are offset depthwise with respect to each other, said surfaces in particular forming a stair or a trench on/in said face, said method (100) comprising the following steps: measuring (102) an interferometric signal, called the measured signal, at a plurality of points, called measuring points, of said inspected face; for at least one measuring point, performing an extraction (108) from the measured signal, relatively to at least one and in particular each surface, said extraction (108) delivering, for said measuring point and for said surface, an interferometric signal, called the individual interferometric signal; profilometrically analysing (110) the individual signals independently for each surface. The present invention also relates to a system for inspecting and measuring a face of an object implementing such a method.
The invention relates to a method for inspecting a board (2) for electronics, optics or optoelectronics, which comprises: rotating the board (2) about an axis of symmetry (X) perpendicular to a main surface (S) of said board; emitting, from a light source (20) coupled with an interferometric device (30), two incident light beams so as to form, at the intersection between the two beams, a measurement space (V) containing interference fringes; collecting at least one portion of the light diffused by said region of the board; acquiring the collected light and emitting an electric signal representing the variation of the light intensity of the light collected over time; and detecting, in said signal, a frequency component in said collected light, said frequency being the time signature of the occurrence of a fault in the measurement space.
A confocal chromatic device is provided, including at least one chromatic lens with an extended axial chromatism; at least one broadband light source; at least one optical detector; and at least one measurement channel with a planar Y-junction made with a planar waveguide optics technology, and arranged for transferring light from the at least one light source towards the at least one chromatic lens and for transferring light reflected back through the at least one chromatic lens towards the at least one optical detector.
A method is provided for inspecting the surface of an object such as a wafer having tridimensional structures, using a confocal chromatic device with a plurality of optical measurement channels and a chromatic lens allowing optical wavelengths of a broadband light source to be focused at different axial distances defining a chromatic measurement range. The method includes a step of obtaining an intensity information corresponding to the intensity of the light actually focused on an interface of the object within the chromatic measurement range at a plurality of measurement points on the object by measuring a total intensity over the full spectrum of the light collected by at least some of the optical measurement channels in a confocal configuration.
G01N 21/956 - Inspecting patterns on the surface of objects
H01L 21/66 - Testing or measuring during manufacture or treatment
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01J 3/18 - Generating the spectrumMonochromators using diffraction elements, e.g. grating
G01J 3/453 - Interferometric spectrometry by correlation of the amplitudes
G01B 11/245 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using a plurality of fixed, simultaneously operating transducers
48.
METHOD FOR 2D/3D INSPECTION OF AN OBJECT SUCH AS A WAFER
The present invention concerns a method for inspecting the surface of an object (10) such as a wafer comprising tridimensional structures (11), using a confocal chromatic device with a plurality of optical measurement channels (24) and a chromatic lens (13) allowing optical wavelengths of a broadband light source (19) to be focused at different axial distances defining a chromatic measurement range, the method comprising a step of obtaining an intensity information corresponding to the intensity of the light actually focused on an interface of the object (10) within the chromatic measurement range at a plurality of measurement points (15) on the object (10) by measuring a total intensity over the full spectrum of the light collected by at least some of the optical measurement channels (24) in a confocal configuration.
A confocal chromatic device for inspecting the surface of an object such as a wafer, including a plurality of optical measurement channels with collection apertures arranged for collecting the light reflected by the object through a chromatic lens at a plurality of measurement points, the plurality of optical measurement channels including optical measurement channels with an intensity detector for measuring a total intensity of the collected light. A method is also provided for inspecting the surface of an object such as a wafer including tridimensional structures.
The present invention relates to a device for measuring heights and/or thicknesses on a measurement object (24) such as a wafer, comprising: (i) a first low-coherence interferometer arranged to combine, in a spectrometer (18), a reference optical beam (17) and a measurement optical beam (16) from reflections of said light on interfaces of the measurement object (24), so as to produce a band spectrum signal (41) with spectral modulation frequencies; (ii) movement means (21) for varying the relative optical length of the measurement (16) and reference (17) optical beams, and means for measuring position information representing said relative optical length; (iii) electronic and computing means (20) arranged to determine at least one spectral modulation frequency representing an optical path difference between the measurement optical beam (16) and the reference optical beam (17), and to determine, using said position information and said at least one spectral modulation frequency, at least one height and/or thickness on said measurement object (24); and (iv) second optical means for measuring distance and/or thickness (27) with a second measurement beam (28) incident on the measurement object (24) according to a second surface opposite the measurement beam (16). The invention also relates to a method implemented in said device.
A confocal chromatic device is provided for inspecting the surface of an object such as a wafer, including a plurality of optical measurement channels with collection apertures arranged for collecting the light reflected by the object through a chromatic lens at a plurality of measurement points, and a magnifying lens arranged for introducing a variable or changeable scaling factor between the spatial repartition of the collection apertures and the measurement points. A method is also provided for inspecting the surface of an object such as a wafer including tridimensional structures.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Devices and systems for inspection in the semiconductors, micro-optics and micro-electro-mechanical systems industries; optical inspection sensors, devices and systems; devices and systems for metrology and dimensional control in the semiconductors, micro-optics and micro-electro-mechanical systems industries; optical metrology sensors, devices and systems. Machinery installation, maintenance and repair. Engineering services.
54.
METHOD AND SYSTEM FOR INSPECTING WAFERS FOR ELECTRONICS, OPTICS OR OPTOELECTRONICS
The invention includes a method for inspecting a wafer (2) for electronics, optics or optoelectronics, wherein said method includes: rotating the wafer (2) about an axis of symmetry perpendicular to a main surface (S) of said wafer; emitting, from at least one light source (20), at least two pairs of incident coherent light beams, in order to form two measurement spaces containing interference fringes having different fringe spacings; collecting a light beam diffused by the surface of the wafer; acquiring the collected light and emitting an electric signal representing the temporal variation of the light intensity of the collected light; detecting a frequency component in said signal, said frequency being the time signature of the passage of a defect through a respective measurement space; determining a parameter, referred to as defect visibility, for each detected signature, using the visibility determined for each measurement space; obtaining respective information on the size of said defect; and cross-checking information obtained for each measurement space in order to determine the size of the defect.
The invention relates to a method for inspecting a wafer for electronics, optics or electronics, which includes: rotating the wafer about an axis of symmetry perpendicular to a main surface (S) of said wafer; emitting, from a light source (20) coupled with an interferometric device (30), two almost-collimated incident light beams, in order to form, at the intersection of the two beams, a measurement space containing interference fringes extending transversely with respect to the path of rotation of the wafer and having a variable fringe spacing in the measurement space, the time signature of the passage of a defect through the measurement space depending on the value of the fringe spacing at the place where the defect passes through the measurement space, said wafer being at least partially transparent to the wavelength of the light source, the interferometric device (30) and the wafer being arranged relative to one another such that the measurement space extends into a region of the wafer, the thickness of said region being less than the thickness of the wafer; collecting, at least partially, the light diffused by said region of the wafer; acquiring the collected light and emitting an electric signal representing the temporal variation of the light intensity of the collected light; detecting, in said signal, a frequency component in the variation of the intensity of said collected light, said frequency being the time signature of the passage of a defect through the measurement space; determining, from the value of the fringe spacing at the place where the defect passes, the position of said defect in the radial direction and/or in the thickness of the wafer.
An imaging device is provided for localizing structures through the surface of an object such as a wafer, with a view to positioning a measuring sensor relative to the structures, includes: (i) an imaging sensor; (ii) an optical imager able to produce, on the imaging sensor, an image of the object in a field of view; and (iii) an illuminator for generating an illuminating beam and lighting the field of view in reflection, in which the illuminating beam and lighting the field of view in reflection, in which the illuminator is able to generate an illuminating beam the spectral content of which is adapted to the nature of the object, such that the light of the beam is able to essentially penetrate into the object. Also provided is a system and a method for carrying out dimensional measurements on an object such as a wafer.
B24B 49/12 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
B24B 37/005 - Control means for lapping machines or devices
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
An imaging method and device is provided for inspecting for the presence, in an object like a wafer, of enclosed structures, such as vias, employing: an imaging sensor; an optical imager able to produce, on the imaging sensor, an object image in a field of view; and an illuminator for generating an illuminating beam and lighting the field of view in reflection, including: acquiring a first image of the object by illuminating the object with a first illuminating beam adapted to the object, such that the light of the beam penetrates the object; acquiring a second image of the object by illuminating the object with a second illuminating beam adapted to the object, such that the light of the beam is reflected by the surface of the object; and comparing the first and second images to identify structures that appear in the first image but not in the second image.
B24B 49/12 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
B24B 37/005 - Control means for lapping machines or devices
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
A nanotopographic measuring device comprises an input arranged to receive sets of measurement data relating to a semiconductor wafer and memory organized into first and second working tables and a results table. A calculation function is capable of establishing a current surface equation from localized gradient values. The equation is established in such a way as to generally minimize a deviation amount between the gradient values calculated from the current surface equation and the localized gradient values. A reconstruction function calculates localized gradient values from a set of measurement data corresponding to an area of the wafer and completes the working tables with these values. It repeatedly calls the calculation function, each time with a part of the values of the first working table and the second working table corresponding to a portion of the area of the wafer to determine, each time, a current surface equation. It completes the results table with the localized height data corresponding to this area, in relation to the reference plane of the wafer, the localized height data being calculated from at least certain of the current surface equations.
The invention relates to a dark-field semiconductor wafer inspection device including, in the following order, a light source for emitting an incident beam to a wafer along a first axis, a concentrator that is symmetrical in relation to a plane passing through the first and second axes and is provided with a mirror that is elliptically cut along a plane perpendicular to an axis perpendicular to the first axis and has a generator parallel to the first axis, parallel first and second slits being set up sideways in first and second portions of the concentrator at the points for concentrating the light that is scattered by the wafer and reflected by the second and first portions of the concentrator, respectively, and a photomultiplier using a slit.
Device for inspecting defects in semiconductor wafers, comprising a member for detecting surface defects using variations in the slope of a surface of the wafer, a member for detecting surface defects using variations in the light intensity reflected by a surface of the wafer, at a plurality of points, a member for detecting light intensity scattered by the surface of the wafer, a light source, and a detecting and classifying mechanism connected upstream of said detecting members.
The invention relates to a device for inspecting the edge of semiconductor wafers, including a chromatic confocal microscope with a lighting pathway and an analysis pathway, the lighting pathway including a polychromatic light source, a slot and an axial chromatism objective lens comprising a lens at least made of a material having an Abbe number lower than 50, and the analysis pathway includes said objective lens, a chromatic filtering slot with a light intensity sensor in that order, the slot of the lighting pathway and the slot of the analysis pathway being provided at substantially the same optical distance from the edge of the wafer to be inspected.
Semiconductor wafer inspection device comprising a wager transport arm provided with at least one wafer support element, a wafer gripper, the gripper having two distant branches designed to take hold of the opposed edges of the wafer, the gripper being mounted so as to rotate on a shaft in order to be able to rotate the wafer between an approximately horizontal position and an approximately vertical position, and at least two inspection systems placed on one side of the wafer and on the other, in an approximately vertical position symmetrically with respect to the plane passing through the wafer.
H04N 7/18 - Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
