A quantum repeater circuit can include a resource state interconnect circuit that outputs one resource state per clock cycle, with each resource state having a number of entangled qubits. The circuit can also include circuits and delay lines to perform entangling measurement operations on qubits of resource states generated by the same resource state generator in different clock cycles. The circuit can be operated as a quantum repeater that receives an encoded logical qubit and produces a reduced-noise version of the encoded logical qubit.
A system includes a first photonic integrated circuit. The circuit includes a qubit encoder configured to receive a spatial-mode qubit and convert the spatial-mode qubit to a temporal-mode qubit and an optical interconnect configured to receive and transmit the temporal-mode qubit. The system further includes a second photonic integrated circuit, itself including a qubit decoder configured to receive the temporal-mode qubit and convert the temporal-mode qubit back into the spatial-mode qubit.
The various embodiments described herein include methods, devices, and circuits for reducing switch transition time of superconductor switches. In some embodiments, an electrical circuit includes: (i) an input component configured to generate heat in response to an electrical input; and (ii) a first superconducting component thermally-coupled to the input component. The electrical circuit is configured such that, in the absence of the electrical input, at least a portion of the first superconducting component is maintained in a non-superconducting state in the absence of the electrical input; and, in response to the electrical input, the first superconducting component transitions to a superconducting state.
H03K 17/94 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the way in which the control signals are generated
5.
Methods And Devices For Obtaining Quantum Cluster States With High Fault Tolerance
A method for obtaining a plurality of entangled qubits represented by a lattice structure that includes a plurality of contiguous lattice cells. A respective edge of a respective lattice cell corresponds to one or more edge qubits, and a respective face of the respective lattice cell corresponding to one or more face qubits. Each face qubit is entangled with adjacent edge qubits. A first face of the respective lattice cell corresponds to two or more face qubits, and/or a first edge corresponds to two or more edge qubits. A device for obtaining the plurality of entangled qubits represented by the above-described lattice structure is also described.
G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
G06F 15/16 - Combinations of two or more digital computers each having at least an arithmetic unit, a program unit and a register, e.g. for a simultaneous processing of several programs
A method of resolving a number of photons received by a photon detector includes optically coupling a waveguide to a superconducting wire having alternating narrow and wide portions; electrically coupling the superconducting wire to a current source; and electrically coupling an electrical contact in parallel with the superconducting wire. The electrical contact has a resistance less than a resistance of the superconducting wire while at least one narrow portion of the superconducting wire is in a non-superconducting state. The method includes providing to the superconducting wire, from the current source, a current configured to maintain the superconducting wire in a superconducting state in the absence of incident photons; receiving one or more photons via the waveguide; measuring an electrical property of the superconducting wire, proportional to a number of photons incident on the superconducting wire; and determining the number of received photons based on the electrical property.
A device includes photon detectors, first photonic modes (coupled with photons sources) for outputting a first set of four photons, second photonic modes to provide a second set of at least four photons to the photon detectors, third photonic modes (coupled with the photon sources) to provide a third set of at least photons to the photon detectors, first couplers coupling modes in the first set of photonic modes to modes in the second set of photonic modes, and second couplers coupling modes of the third set of photonic modes to modes of the second set of photonic modes. The first and second couplers are configured to cause the first photonic modes to output, with a first non-zero probability, a pair of photons in a Bell state when a first number of photons is provided to respective inputs of the first photonic modes and the third photonic modes.
An example circuit includes a superconducting component having a plurality of narrow portions and a plurality of wide portions. The example circuit further includes a plurality of photon detector components, each photon detector component coupled to a corresponding narrow portion of the plurality of narrow portions and configured to provide an output that causes the corresponding narrow portion to transition from a superconducting state to a non-superconducting state. The example circuit also includes an output component coupled to the superconducting component, the output component configured to determine a number of the plurality of narrow portions of the superconducting component that are in the non-superconducting state.
H03K 19/195 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using superconductive devices
An etching method includes forming a metal oxide layer including a barium titanate layer or a strontium titanate layer over a substrate, forming a patterned masking layer over the metal oxide layer, performing an anisotropic dry etching process to etch the metal oxide layer in regions not covered by the patterned masking layer, and performing an isotropic wet etching process to remove residual materials not removed by the anisotropic dry etching process and to form a patterned metal oxide layer.
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
Circuits and methods can implement reconfigurable spatial rearrangement (also referred to as “spatial multiplexing”) for a group of photons propagating in waveguides. For instance, two sets of small optical multiplexer circuits (such as two sets of 2×2 optical multiplexer circuits or two sets of 3×3 optical multiplexer circuits) can be used to rearrange a pattern of photons on a first set of waveguides into a usable input pattern for a downstream optical circuit.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
An optical device includes a first multi-mode waveguide, a first optical coupler coupled to the first multi-mode waveguide, the first coupler being tapered and curved, and a first single-mode waveguide having a first end coupled to the first optical coupler. The optical device maybe used in an optical delay device. A method of propagating light in a first multi-mode waveguide toward a first optical coupler, propagating the light in the first optical coupler toward a first single-mode waveguide, the first optical coupler being tapered and curved, and propagating the light along the first single-mode waveguide is also disclosed.
G02B 6/28 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
Circuits and methods that implement multiplexing for photons propagating in waveguides (or optical paths) are disclosed, in which an input photon received on a selected one of a set of input paths can be selectably routed to one or more of a set of output paths. One or more of the output paths can be always selected while one or more other output paths can be selected on a rotating or cyclic basis, in a fixed order, and the input path can be selected based at least in part on which one(s) of a set of input paths is (are) currently propagating a photon.
A modular quantum entanglement processing system can include a plurality of seed state systems, resource state systems, and fusion systems that can be ordered in different arrangements. The systems can be composed of modular assemblies or chips, such that the systems can be modularized and extended to perform entanglement based processing of tasks in a scalable manner. Some of the assemblies or chips of the different systems can be designed to operate at cryogenic temperatures, such as detector, while other assemblies or chips of the different systems can operate at room temperature, where the different chip types can be coupled to one another using fiber optic cables.
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
H03K 17/92 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of superconductive devices
An example multi-element photon detector includes a waveguide configured to guide a set of photons from a photon source, wherein the waveguide includes (i) a first coupling region, and (ii) a second coupling region. The example detector also includes a first photon detector coupled to the first coupling region and configured to detect individual photons from the first coupling region, the first photon detector arranged to have a first coupling efficiency with the waveguide. The example detector further includes a second photon detector coupled to the second coupling region and configured to detect individual photons from the second coupling region, the second photon detector arranged to have a second coupling efficiency with the waveguide, wherein the second coupling efficiency is greater than the first coupling efficiency such that the multi-element photon detector has a first probability of absorption across the first and second single photon detectors.
A method includes propagating light in a first waveguide of a 1×2 optical switch. The first waveguide is adjacent to a second waveguide in a coupling region. The 1×2 optical switch comprising an input to receive the light and couple the light to the first waveguide. The 1×2 optical switch further comprising a first output to output light from the first waveguide and a second output to output the light from the second waveguide. The method further includes coupling the light to the first output and the second output based on absorption values of the second waveguide in the coupling region; adjusting absorption values of the second waveguide in the coupling region such that light is directed from the input to only the first output; and coupling light to only the first output based on the adjusted absorption values of the second waveguide in the coupling region.
G02F 1/313 - Digital deflection devices in an optical waveguide structure
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/35 - Optical coupling means having switching means
A system for generating clock signals for a photonic quantum computing system includes a first pump photon source, a first photon-pair source optically coupled to the first pump photon source, and a first photodetector optically coupled to the first photon-pair source. The system also includes a first clock generator electrically coupled to the first photodetector, a second pump photon source, a second photon-pair source optically coupled to the second pump photon source, and a second photodetector optically coupled to the second photon-pair source. The system further includes a second clock generator electrically coupled to the second photodetector and a clock mediator coupled to the first clock generator and the second clock generator.
G06F 1/06 - Clock generators producing several clock signals
G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
H03K 3/38 - Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of superconductive devices
H03K 3/42 - Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
A device includes a superconductor layer and a piezoelectric layer positioned adjacent to the superconductor layer. The piezoelectric layer is configured to apply a first strain to the superconductor layer in response to receiving a first voltage that is below a predefined voltage threshold and to apply a second strain to the superconductor layer in response to receiving a second voltage that is above the predefined voltage threshold. While the device is maintained below a superconducting threshold temperature for the superconductor layer and is supplied with current below a superconducting threshold current for the superconductor layer, the superconductor layer is configured to 1) operate in a superconducting state when the piezoelectric layer applies the first strain to the superconductor layer and 2) operate in an insulating state when the piezoelectric layer applies the second strain to the superconductor layer.
A hybrid electronic/photonic device includes a substrate, a first electronic/photonic integrated circuit mounted on the substrate, a second electronic/photonic integrated circuit mounted on the substrate, and an electrical coupler electrically connecting the first electronic/photonic integrated circuit to the second electronic/photonic integrated circuit. At least a portion of the electrical coupler is supported by the substrate.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
Quantum computing devices, systems, quantum circuits and methods for solving a linear equation Ay = b. A quantum linear solver is iteratively performed until a success indicator indicates success. The quantum linear solver prepares a first plurality of qubits in the state b. An adiabatic evolution circuit is applied to the first plurality of qubits using a. second plurality of qubits that have encoded as A for a plurality of time steps to unitarily evolve the first quantum state toward the target state y. After applying the adiabatic evolution circuit, a projective filter measurement is performed on the first plurality of qubits to produce the success indicator. When the success indicator indicates success, the first plurality of qubits is output as an approximation of the target state.
An example single photon detector includes a thin sheet of superconducting material connected to a current source to receive a small current generated from detection one or more photons, the thin sheet of superconducting material connected to a ground, the thin sheet of superconducting material further connected to an amplifying current source to receive a larger current that is larger than the small current. The example detector further includes an asymmetric arrangement of nanowires, the asymmetric arrangement of nanowires comprising three or more differently sized nanowires that are arranged in the thin sheet in a sequence from smallest to largest such that the asymmetric arrangement of nanowires are triggered in the sequence in response to the small current. The example detector also includes an output to output current from the amplifying current source in response to the asymmetric arrangement of nanowires being triggered.
The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.
H01L 31/113 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor
The various embodiments described herein include methods, devices, and systems for detecting photons. As described herein, superconducting photodetectors may be coupled with a waveguide such that reflection is reduced/minimized. In one aspect, an optical circuit includes an optical waveguide and a plurality of photodetectors coupled to the optical waveguide, adjacent photodetectors of the plurality of photodetectors being spaced to meet one or more preset destructive interference criteria.
A method of operating a bipolar transistor having a source, a drain, and a channel electrically coupled to the source and the drain includes applying a bias voltage to a gate electrically coupled to the channel, increasing a conductivity of the channel via field ionization in response to applying the bias voltage, and conducting current from the source to the drain
H01L 23/44 - Arrangements for cooling, heating, ventilating or temperature compensation the complete device being wholly immersed in a fluid other than air
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Techniques disclosed herein relate generally to integrating photonic integrated circuits and electronic integrated circuits in a same package. A device includes a semiconductor substrate and a die stack on the semiconductor substrate. The die stack includes a photonic integrated circuit (PIC) die and an electronic integrated circuit (EIC) die. The PIC die includes a PIC substrate and a photonic integrated circuit formed on the PIC substrate. The EIC die includes an EIC substrate and an electronic integrated circuit formed on the EIC substrate. The EIC die and the PIC die are bonded such that the PIC substrate and the EIC substrate are disposed on opposing sides of the die stack. The PIC substrate is bonded to the semiconductor substrate. The device also includes a cooling plate bonded to the EIC substrate.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A notch filter circuit includes a wavelength demultiplexer, a first pump rejection filter coupled to the wavelength demultiplexer, and a second pump rejection filter coupled to the wavelength demultiplexer. The notch filter circuit also includes a first notch filter arm coupled to the first pump rejection filter and including a first chain of asymmetric Mach-Zehnder interferometers (MZIs) and a second notch filter arm coupled to the second pump rejection filter and including a second chain of asymmetric MZIs.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
27.
METHOD AND SYSTEM FOR INTEGRATED PHOTONIC NOTCH FILTER
A notch filter circuit includes a wavelength demultiplexer, a first pump rejection filter coupled to the wavelength demultiplexer, and a second pump rejection filter coupled to the wavelength demultiplexer. The notch filter circuit also includes a first notch filter arm coupled to the first pump rejection filter and including a first chain of asymmetric Mach-Zehnder interferometers (MZIs) and a second notch filter arm coupled to the second pump rejection filter and including a second chain of asymmetric MZIs.
According to some embodiments, a system includes a first input coupled to a first qubit and a first switch, wherein the first switch includes a first output, a second output, and a third output. The system further includes a first single qubit measuring device coupled to the first output of the first switch and a second single qubit measuring device coupled to a first output of a second switch. The system further includes a first two qubit measuring device coupled to the second output of the first switch and a second output of the second switch and a second two qubit measuring device coupled to the third output of the first switch and a third output of the second switch.
Circuits are provided that create entanglement among qubits having Gottesman-Kitaev-Preskill (GKP) encoding using photonic systems and structures. For example, networks of beam splitters and homodyne measurement circuits can be used to perform projective entangling measurements on GKP qubits from different quantum systems. In some embodiments. GKP qubits can be used to implement quantum computations using fusion-based quantum computing or other fault-tolerant quantum computing approaches.
An optical device includes a first waveguide that includes a plurality of first portions coupled with regions doped with first dopants, and a plurality of second portions coupled with regions doped with second dopants, distinct from the first dopants, the plurality of first portions being interleaved with the plurality of second portions. And the optical device includes a second waveguide located adjacent to the first waveguide for coupling light from the first waveguide to the second waveguide. The second waveguide includes a third portion coupled with a third region doped with the first dopants and a fourth portion coupled with a fourth region doped with the second dopants, wherein the first portion is located adjacent to the third portion and the second portion is located adjacent to the fourth portion.
G02F 1/313 - Digital deflection devices in an optical waveguide structure
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/35 - Optical coupling means having switching means
A modular quantum entanglement processing system can include a plurality of seed state systems, resource state systems, and fusion systems that can be ordered, in different arrangements. The systems can be composed of modular assemblies or chips, such that the systems can be modularized and extended to perform entanglement based processing of tasks in a scalable manner. Some of the assemblies or chips of the different systems can be designed to operate at cryogenic temperatures, such as detector, while other assemblies or chips of the different systems can operate at room temperature, where the different chip types can be coupled to one another using fiber optic cables.
A fault-tolerant quantum computer using topological codes such as surface codes can have an architecture that reduces the amount of idle volume generated. The architecture can include qubit modules that generate surface code patches for different qubits and a network of interconnections between different qubit modules. The interconnections can include "port" connections that selectably enable coupling of boundaries of surface code patches generated in different qubit modules and/or "quickswap" connections that selectably enable transferring the state of a surface code patch from one qubit module to another. Port and/or quickswap connections can be made between a subset of qubit modules. For instance port connections can connect a given qubit module to other qubit modules within a fixed range. Quickswap connections can provide a log-tree network of direct connections between qubit modules.
G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
G06N 10/70 - Quantum error correction, detection or prevention, e.g. surface codes or magic state distillation
G06N 10/80 - Quantum programming, e.g. interfaces, languages or software-development kits for creating or handling programs capable of running on quantum computersPlatforms for simulating or accessing quantum computers, e.g. cloud-based quantum computing
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38.
QUANTUM SYSTEMS AND METHODS FOR ESTIMATING EXPECTATION VALUES OF ARBITRARY OBSERVABLES ON QUANTUM STATES
Systems, methods, and quantum circuits for estimating an expectation value of an observable of a physical quantum system. A plurality of qubits is received, including inner and outer register qubits and state simulation qubits prepared in a reference eigenstate of a Hermitian operator having a reference eigenvalue. A first unitary operation is performed that receives the inner register and state simulation qubits as input and outputs phase information. The phase information is related to the reference eigenvalue and a plurality of eigenvalues of a first operator corresponding to the observable. The outer phase register qubits are measured to obtain classical measurement results that are used to determine an expectation value of the observable for the reference state.
Quantum information processing systems can implement error correction decoding to extract logical outcome data from readout data. A modular decoder system can perform modular decoding of sub-tasks on different decoders with low communication between the decoder units and without sacrificing decoding accuracy. The modular decoder system can implement decomposition of a global decoding problem into sub-tasks comprising commit regions and buffers for efficient and accurate decoding of quantum data.
A method includes fabricating a device including a first dielectric layer, an optical waveguide in the first dielectric layer, and a superconducting circuit in the first dielectric layer and on the optical waveguide. The method also includes forming a sacrificial structure on the first dielectric layer, the sacrificial structure aligned with the superconducting circuit, depositing a second dielectric layer on the sacrificial structure, and cutting an opening in the second dielectric layer to expose the sacrificial structure. The method further includes wet etching the sacrificial structure through the opening and sealing the opening in the second dielectric layer with a third dielectric layer to form a micro-channel between the first dielectric layer and the second dielectric layer.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G01J 1/02 - Photometry, e.g. photographic exposure meter Details
Government of the United States of America, as Represented by the Secretary of Commerce (USA)
Inventor
Najafi, Faraz
Jin Stone, Qiaodan
Mcdaughan, Adam Nykoruk
Abstract
An example electric circuit includes a superconductor component having a first terminal at a first end and a second terminal at a second end. The superconductor component includes a first portion coupled to the first terminal, a second portion coupled to the second terminal, and a third portion coupling the first portion and the second portion. The third portion has a curved shape such that the first portion of the superconductor component is proximate to, and thermally coupled to, the second portion of the superconductor component. The example electric circuit further includes a coupling component coupled to the third portion of the superconductor component, and a gate component configured to generate a resistive heat that exceeds a superconducting threshold temperature of the superconductor component, where the gate component is separated from the superconductor component by the coupling component.
Light can be input into a coupling region of a first waveguide of a photonic device. The light from the first waveguide is coupled to a second waveguide, where the first waveguide has a narrowing taper that couples the light to a widening taper of the second waveguide. The first waveguide can be in a first layer of the photonic device, the second waveguide being in an adjacent second layer. The light from the second waveguide can be coupled to a third layer of the photonic device, the third layer being adjacent to the first layer such that the second layer and the third layer are separated from the first layer. The second waveguide has a narrowing taper that couples the light to the third layer. The third layer outputs the light from the coupling region.
An example memory cell includes a superconducting loop configured to receive a write current and form a persistent current that stores a data bit in the superconducting loop. The example memory cell further includes a superconducting wire coupled to the superconducting loop and configured to selectively read-out the data bit in the superconducting loop in response to a control signal. An example method of reading data from the memory cell includes receiving, at the superconducting loop, a write current to store a data bit in a superconducting loop, and forming a persistent current that circulates in the superconducting loop as a stored data bit. The example method further includes, in accordance with a control signal, transferring, via a superconducting wire of the memory cell that is coupled to the superconducting loop, at least a portion of the persistent current to an output of the memory cell.
G11C 11/44 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using super-conductive elements, e.g. cryotron
A device (e.g., a photonic multiplexer) is provided that includes a plurality of first switches. Each first switch in the plurality of first switches includes a plurality of first channels. Each first switch is configured to shift photons in the plurality of first channels by zero or more channels, based on first configuration information provided to the first switch. The device further includes a plurality of second switches. Each second switch includes a plurality of second channels. Each second channel is coupled with a respective first channel from a distinct first switch of the plurality of first switches. Each second switch is configured to shift photons in the plurality of second channels by zero or more channels, based on second configuration information provided to the second switch.
.An optical device has an optical detector to detect light from an optical source, an optical returner that receives the light and forms returned light, and an optical coupler that couples the returned light from the optical returner to the optical detector. The optical coupler has a first waveguide and a second waveguide separated by a gap that tapers towards the optical returner, the first waveguide and second waveguide having waveguide walls that are tilted at an angle to a propagation direction along the optical coupler to cancel crosstalk between the first waveguide and the second, waveguide.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
A fiber coupler chip can receive light coupled from a plurality of fibers. The fiber coupler chip can reduce a mode size of the light from a. larger size of the fiber to smaller waveguide size using a mode converters or other components. The fiber coupler chip can couple the light using free space coupling to a photonic integrated circuit, where the interface is mode matched waveguide-to- waveguide low loss coupling.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/42 - Coupling light guides with opto-electronic elements
47.
INTERLEAVING MODULE FOR FAULT-TOLERANT QUANTUM COMPUTER
Fusion-based quantum computations can be implemented using a network of interleaving modules. Each interleaving module can receive or produce resource states consisting of entangled physical qubits and can include a set of reconfigurable fusion circuits that can be controlled to perform either fusion operations or single qubit measurements on pairs of qubits from different resource states, routing paths connected to the reconfigurable fusion circuits, and delay lines and routing switches that operate to select routing paths for qubits of the resource states, thereby implementing a desired combination of fusion operations and single qubit measurements. The routing paths can include local routing paths that couple to reconfigurable fusion circuits in the same interleaving module and network routing paths that couple a routing switch in one interleaving module to a reconfigurable fusion circuit in a different interleaving module within the network.
A solid state device includes a waveguide located on a substrate, a grating coupler connected to the waveguide, and a dielectric layer stack including a bottom dielectric layer portion located on the grating coupler and having an opening formed by conductor lift-off over the bottom dielectric layer portion.
A waveguide structure includes a substrate and a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction and a first electro-optic coefficient. The waveguide structure also includes a first cladding layer at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient. The second cladding layer is coupled to the first cladding layer.
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
Circuits and methods that implement multiplexing for photons propagating in waveguides are disclosed, in which an input photon received on a selected one of a set of input waveguides can be selectably routed to one of a set of output waveguides. The output waveguide can be selected on a rotating or cyclic basis, in a randomized or partially randomized order, or in a fixed order, and the input waveguides can be selected based at least in part on which of a set of input waveguides are currently propagating a photon.
G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
H04Q 11/00 - Selecting arrangements for multiplex systems
A frequency conversion system includes a bus waveguide, a first pump laser coupled to the bus waveguide and characterized by a first frequency, a second pump laser coupled to the bus waveguide and characterized by a second frequency, an input light combining device coupled to the bus waveguide and configured to combine light from the first pump laser and the second pump laser to produce a combined light, and a plurality of optical resonators coupled to the bus waveguide. Each optical resonator of the plurality of optical resonators has a respective resonance line width, wherein for each optical resonators of the plurality the respective resonance line width overlaps with a resonance line width of at least one adjacent optical resonator of the plurality of optical resonators, and wherein each optical resonator of the plurality is configured to generate output light at a converted frequency via frequency mixing.
A system includes a classical computing system and one or more quantum computing chips coupled to the classical computing system. The one or more quantum computing chips includes one or more electro-optic devices. Each electro-optic device includes a substrate, a waveguide disposed on top of the substrate, and a layer stack disposed on top of the waveguide and including a plurality of electro-optic material layers interleaved with a plurality of interlayers. Each electro-optic device further comprising a waveguide core disposed on top of a portion of the layer stack. The plurality of interlayers are characterized by a first lattice structure and the plurality of electro-optic material layers are under tensile stress and are characterized by a second lattice structure and crystallographic phase.
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
The various embodiments described herein include methods, devices, and systems for operating superconducting circuitry. In one aspect, a programmable circuit includes a configurable superconducting component and control circuitry coupled to the configurable superconducting component. The superconducting component includes an input terminal, an output terminal, and a plurality of gate terminals. The control circuitry is coupled to the superconducting component via the plurality of gate terminals. The control circuitry is adapted to selectively transition portions of the superconducting component from a superconducting state to a non-superconducting state. The control circuitry is configured to operate the superconducting component in a first configuration in which the programmable circuit is configured to perform a first function. The control circuitry is further configured to operate the superconducting component in a second configuration in which the programmable circuit is configured to perform a second function, distinct from the first function.
H03K 19/195 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using superconductive devices
H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
H03K 19/17736 - Structural details of routing resources
H03K 19/17784 - Structural details for adapting physical parameters for supply voltage
A cryogenic structure can include a cryogenic chamber that houses a plurality of circuits that operate and cryogenic temperatures, and a room temperature portion that houses a plurality of circuits that operate at non-cryogenic temperatures. The circuits can include computer chips, such as electrical or photonic chips, that are housed on movable structures that insertable into the cryogenic structure.
F25D 29/00 - Arrangement or mounting of control or safety devices
F25D 17/02 - Arrangements for circulating cooling fluidsArrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
55.
SOLID-STATE DEVICE INCLUDING A HEAT SEGREGATED LAYER
A solid-state device includes a lower thermal contact, an upper thermal contact, an electronic device that generates heat located between the lower thermal contact and upper thermal contact; and a heat segregated layer embedding a low temperature device located between the lower thermal contact and the electronic device and including a thermal barrier for segregating the heat generated by the electronic device from the low temperature device.
A method of removing a solid-state die handle substrate from a solid-state die may include providing a substrate structure including a first substrate, a second substrate bonded to the first substrate and the solid-state die bonded to the first substrate in an opening in the second substrate, forming a planarizing material in the opening, and removing at least a portion of the solid-state die handle substrate and at least a portion of the second substrate.
An optical proximity correction (OPC) device may include a decomposition data generator that generates structural decomposition data from incoming design data, a mapping data generator that generates mapping data from the structure decomposition data, and a predictive correction unit that performs interleaved lithography-aware OPC based on the mapping data and correction adjustment data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
A hybrid electronic/photonic device includes a first photonic die containing first photonic components, a first electronic die electrically connected to the first photonic die, a first electrical interposer bonded to the first electronic die; and an electrical coupler coupled to the first electrical interposer such that at least a first portion of the electrical coupler coupled to the first electrical interposer and the first electrical interposer have respective coefficients of thermal expansion that differ by 10% or less.
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
59.
SOLID STATE DEVICE INCLUDING A STITCH PORTION BETWEEN DIFFERENT DIES AND METHODS OF FORMING THE SAME
A solid state device includes a substrate, a first die on the substrate and having a first sidewall, a second die different than the first die on the substrate and having a second sidewall facing the first sidewall, and a first stitch portion connecting the first die at the first sidewall to the second die at the second sidewall.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
A photon counting device includes unit cells, a bias current source coupled to the unit cells, and a waveguide coupled to the unit cells. Each unit cell includes photodetector(s). Each photodetector includes superconducting component(s) and a transistor. The transistor includes a superconducting gate that is coupled in parallel with the photodetector(s), and a channel that is electrically isolated from the superconducting gate. For each unit cell, a photodetector is optically coupled to the waveguide. A superconducting component is configured to transition from the superconducting state to the non-superconducting state in response to a photon being incident upon the superconducting component while the superconducting component receives at least a portion of bias current output from the bias current source. The superconducting gate of the unit cell is configured to transition from the superconducting state to the non-superconducting state in response to the superconducting component transitioning to the non-superconducting state.
A photon detecting component is provided. The photon detecting component includes a first waveguide and a detecting section. The detecting section includes a second waveguide; a detector, optically coupled with the second waveguide, configured to detect one or more photons in the second waveguide; an optical switch configured to provide an optical coupling between the first waveguide and the second waveguide when the detector is operational; and an electrical switch electrically coupled to the detector, wherein the electrical switch is configured to change state in response to the detector detecting one or more photons. The photon detecting component further includes readout circuitry configured to determine a state of the electrical switch of the detecting section.
H03K 17/94 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the way in which the control signals are generated
62.
Active photonic devices with enhanced pockels effect via isotope substitution
An optical switch structure includes a substrate, a first electrical contact, and a first material having a first conductivity type electrically connected to the first electrical contact. The optical switch structure also includes a second material having a second conductivity type coupled to the first material, a second electrical contact electrically connected to the second material, and a waveguide structure disposed between the first electrical contact and the second electrical contact. The waveguide structure includes a waveguide core coupled to the substrate and including a core material characterized by a first index of refraction and a waveguide cladding at least partially surrounding the waveguide core and including a cladding material characterized by a second index of refraction less than the first index of refraction and an isotope-enhanced Pockels effect.
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
63.
QUANTUM COMPUTER USING SWITCHABLE COUPLINGS BETWEEN LOGICAL QUBITS
A fault-tolerant quantum computer using topological codes such as surface codes can have an architecture that reduces the amount of idle volume generated. The architecture can include qubit modules that generate surface code patches for different qubits and a network of interconnections between different qubit modules. The interconnections can include “port” connections that selectably enable coupling of boundaries of surface code patches generated in different qubit modules and/or “quickswap” connections that selectably enable transferring the state of a surface code patch from one qubit module to another. Port and/or quickswap connections can be made between a subset of qubit modules. For instance port connections can connect a given qubit module to other qubit modules within a fixed range. Quickswap connections can provide a log-tree network of direct connections between qubit modules.
A fault-tolerant quantum computer using topological codes such as surface codes can have an architecture that reduces the amount of idle volume generated. The architecture can include qubit modules that generate surface code patches for different qubits and a network of interconnections between different qubit modules. The interconnections can include “port” connections that selectably enable coupling of boundaries of surface code patches generated in different qubit modules and/or “quickswap” connections that selectably enable transferring the state of a surface code patch from one qubit module to another. Port and/or quickswap connections can be made between a subset of qubit modules. For instance port connections can connect a given qubit module to other qubit modules within a fixed range. Quickswap connections can provide a log-tree network of direct connections between qubit modules.
A fault-tolerant quantum computer using topological codes such as surface codes can have an architecture that reduces the amount of idle volume generated. The architecture can include qubit modules that generate surface code patches for different qubits and a network of interconnections between different qubit modules. The interconnections can include “port” connections that selectably enable coupling of boundaries of surface code patches generated in different qubit modules and/or “quickswap” connections that selectably enable transferring the state of a surface code patch from one qubit module to another. Port and/or quickswap connections can be made between a subset of qubit modules. For instance port connections can connect a given qubit module to other qubit modules within a fixed range. Quickswap connections can provide a log-tree network of direct connections between qubit modules.
A fault-tolerant quantum computer using topological codes such as surface codes can have an architecture that reduces the amount of idle volume generated. The architecture can include qubit modules that generate surface code patches for different qubits and a network of interconnections between different qubit modules. The interconnections can include “port” connections that selectably enable coupling of boundaries of surface code patches generated in different qubit modules and/or “quickswap” connections that selectably enable transferring the state of a surface code patch from one qubit module to another. Port and/or quickswap connections can be made between a subset of qubit modules. For instance port connections can connect a given qubit module to other qubit modules within a fixed range. Quickswap connections can provide a log-tree network of direct connections between qubit modules.
A fault-tolerant quantum computer using topological codes such as surface codes can have an architecture that reduces the amount of idle volume generated. The architecture can include qubit modules that generate surface code patches for different qubits and a network of interconnections between different qubit modules. The interconnections can include “port” connections that selectably enable coupling of boundaries of surface code patches generated in different qubit modules and/or “quickswap” connections that selectably enable transferring the state of a surface code patch from one qubit module to another. Port and/or quickswap connections can be made between a subset of qubit modules. For instance port connections can connect a given qubit module to other qubit modules within a fixed range. Quickswap connections can provide a log-tree network of direct connections between qubit modules.
A method includes receiving a plurality of quantum systems, wherein each quantum system of the plurality of quantum system includes a plurality of quantum sub-systems in an entangled state, and wherein respective quantum systems of the plurality of quantum systems are independent quantum systems that are not entangled with one another. The method further includes performing a plurality of joint measurements on different quantum sub-systems from respective ones of the plurality of quantum systems, wherein the joint measurements generate joint measurement outcome data and determining, by a decoder, a plurality of syndrome graph values based on the joint measurement outcome data.
A quantum device includes a cryogenic chamber and a quantum computing module positioned within the cryogenic chamber. The quantum computing module includes a silicon substrate and a quantum circuit (QC) die including a qubit integrated circuit. The QC die is attached to the silicon substrate. An electronic circuit (EC) die including an electronic integrated circuit is attached to the QC die such that the qubit integrated circuit and the electronic integrated circuit face each other. The QC die can be fusion bonded to the EC die. A circuit board (CB) includes a power converter configured to convert input power received from a cryogenic chamber feedthrough to output power that is coupled to the QC die and to the EC die.
An optical interposer includes multi-layer coupled waveguides for optically coupling between photonic integrated circuit devices, providing low-loss optical delays, coupling photons (e.g., qubit states) between photonic integrated circuits and optical fibers, and the like. In some embodiments, the multi-layer coupled waveguides form a multi-layer waveguide structure with monotonically varying layer separations and waveguide thicknesses. In some embodiments, a waveguide device that includes an oxide layer and zero or more waveguide layers in the oxide layer may be bonded to the optical interposer, where optical fields of the guided modes of the waveguides in the optical interposer can extend to the waveguide device.
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
A method of generating an m-photon entangled state includes inputting photons into a plurality of sets of modes. Each set of modes is coupled to a different set of modes. The method includes detecting photons in the plurality of sets of modes. The method includes, in accordance with a determination, based on a number of photons detected, that more than m-photons remain in the plurality of sets of modes: performing a second detection operation that includes detecting photons in the plurality of sets of modes; determining, based at least in part on a number of photons detected, whether the photons remaining in the plurality of sets of modes after the second detection operation are in the m-photon entangled state; and in accordance with a determination that the photons remaining in the plurality of sets of modes are in the m-photon entangled state, outputting the remaining photons.
A method includes obtaining a plurality of entangled qubits, with high fault tolerance, represented by a lattice structure. The lattice structure includes a plurality of contiguous lattice cells. A first subset of the plurality of entangled qubits defines a first plane, and a second subset of the plurality of entangled qubits defines a second plane that is parallel to and offset from the first plane. The plurality of entangled qubits includes a defect qubit that is entangled with at least one face qubit on the first plane and at least one edge qubit on the second plane.
A superconducting circuit includes a photon detector component, a second component, and a multi-taper superconducting connector shaped to reduce current crowding, the superconducting connector electrically connecting the photon detector component and the second component. The multi-taper superconducting connector includes a first taper arranged adjacent the photon detector component and a second taper arranged adjacent the second component.
H10N 69/00 - Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H10N 60/84 - Switching means for devices switchable between superconducting and normal states
An optical device includes a first multi-mode waveguide, a first optical coupler coupled to the first multi-mode waveguide, the first coupler being tapered and curved, and a first single-mode waveguide having a first end coupled to the first optical coupler. The optical device may be used in an optical delay device. A method of propagating light in a first multi-mode waveguide toward a first optical coupler, propagating the light in the first optical coupler toward a first single-mode waveguide, the first optical coupler being tapered and curved, and propagating the light along the first single-mode waveguide is also disclosed.
G02B 6/28 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
A system includes a first photonic integrated circuit. The circuit includes a qubit encoder configured to receive a spatial-mode qubit and convert the spatial-mode qubit to a temporal-mode qubit and an optical interconnect configured to receive and transmit the temporal-mode qubit. The system further includes a second photonic integrated circuit, itself including a qubit decoder configured to receive the temporal-mode qubit and convert the temporal-mode qubit back into the spatial-mode qubit.
The various embodiments described herein include methods, devices, and systems for detecting photons. In one aspect, an electrical circuit includes a superconducting photon detector that transitions from a superconducting state to a non-superconducting state in response to an incident photon; and a reset circuit coupled in parallel with the superconducting photon detector, the reset circuit comprising a resistor and an inductor coupled together in series, where the resistor is composed of a metal layer and a layer of superconducting material.
H10N 60/30 - Devices switchable between superconducting and normal states
H03K 17/92 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of superconductive devices
H03K 17/94 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the way in which the control signals are generated
78.
CRYOGENIC CHIP-ON-CHIP ASSEMBLIES WITH THROUGH SUBSTRATE VIAS AND METHODS OF FORMING THEREOF
A device includes a photonic cryo die containing photonic components, and an electronic die bonded to the photonic die, the electronic die containing electrically conductive through substrate vias. The electrically conductive through silicon vias can electrically connect a backside redistribution layer to control circuitry for operation in a cryogenic environment in a compact package that exhibits low resistance and low parasitic capacitance.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
A programmable circuit includes a superconducting multi-dimensional array. The programmable circuit further includes a plurality of photon detectors coupled to respective portions of the superconducting multi-dimensional array, each photon detector configured to selectively provide input to a corresponding respective portion sufficient to transition the corresponding respective portion from a superconducting state to a non-superconducting state. The programmable circuit also includes one or more electrical terminals coupled to respective second portions of the superconducting multi-dimensional array.
H03K 19/195 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using superconductive devices
A wafer includes a silicon layer, a first dielectric layer on the silicon layer, and a ferroelectric layer on the first dielectric layer. The ferroelectric layer defines one or more gaps between portions of the ferroelectric layer. The wafer also includes a second dielectric layer on the ferroelectric layer and disposed within the one or more gaps.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A device includes a die stack including a first die including a quantum circuit and a second die including an electronic circuit. The second die and the first die face each other. The device also includes a first interconnect between the quantum circuit and the electronic circuit and a second interconnect between the quantum circuit and the electronic circuit.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H01L 23/00 - Details of semiconductor or other solid state devices
G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
82.
CRYOGENIC CHIP-ON-CHIP ASSEMBLIES WITH THERMAL ISOLATION STRUCTURES AND METHODS OF FORMING THEREOF
A hybrid electronic-photonic package includes a photonic die containing photonic components, an electronic die bonded to the photonic die, and at least one of a cavity and an underfill material having a lower thermal conductivity than materials of the photonic die and the electronic die located between the photonic die and the electronic die.
A Mach-Zehnder interferometer (MZI) filter comprising one or more passive compensation structures are described. The passive compensation structures yield MZI filters that are intrinsically tolerant to perturbations in waveguide dimensions and/or other ambient conditions. The use of n+1 waveguide widths can mitigate n different sources of perturbation to the filter. The use of at least three different waveguide widths for each Mach-Zehnder waveguide can alleviate sensitivity of filter performance to random width or temperature variations. A tolerance compensation portion is positioned between a first coupler section and a second coupler section, wherein the tolerance compensation portion includes a first compensation section having a second width, a second compensation section having a third width and a third compensation section having a fourth width, wherein the fourth width is greater than the third width and the third width is greater than the second width.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
Techniques disclosed herein relate to photon sources with high spectral purity and high brightness. In one embodiment, a photon-pair source includes a pump waveguide, a first resonator coupled to the pump waveguide to couple pump photons from the pump waveguide into the first resonator, a second resonator coupled to the first resonator, and an output waveguide coupled to the second resonator. The second resonator is configured to convert the pump photons into photon pairs. The second resonator and the first resonator are configured to cause a coupling-induced resonance splitting in the second resonator or the first resonator. The second resonator and the output waveguide are configured to couple the photon pairs from the second resonator into the output waveguide. In some embodiments, the photo-pair source includes one or more tuners for tuning at least one of the first resonator or the second resonator.
A device includes a photonic integrated circuit (PIC) die and an electronic integrated circuit (EIC) die bonded to the PIC die. The PIC die includes a waveguide layer including a waveguide and a grating coupler configured to couple incident light into the waveguide, and a first set of dielectric layers on the waveguide layer. The EIC die includes a semiconductor substrate and a second set of dielectric layers on the semiconductor substrate. The first set of dielectric layers faces the second set of dielectric layers. The PIC die and the EIC die include a trench aligned with the grating coupler, the trench extending through the semiconductor substrate, the second set of dielectric layers, and the first set of dielectric layers to the waveguide layer such that the incident light may pass through the trench to reach the grating coupler. A multi-step dry etching process is used to form the trench.
A method and a device for correcting quantum state information are disclosed. A decoder receives information identifying syndrome values for a plurality of entangled qubit states represented by a graph state with a respective edge of the graph state corresponding to a respective qubit state of the plurality of entangled qubit states. The decoder repeats identifying one or more clusters of qubit states and/or syndrome states in the graph state until all of the one or more identified clusters are determined to be valid while increasing a size of a respective cluster each time the identifying operation is performed. The decoder reconstructs one or more qubit states and/or syndrome states for respective clusters; and stores information identifying the one or more reconstructed qubit states and/or syndrome states.
Circuits and methods that implement multiplexing for photons propagating in waveguides are disclosed, in which an input photon received on a selected one of a set of input waveguides can be selectably routed to one of a set of output waveguides. The output waveguide can be selected on a rotating or cyclic basis, in a fixed order, and the input waveguide can be selected based at least in part on which one(s) of a set of input waveguides is (are) currently propagating a photon.
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
A system includes a first photonic integrated circuit. The circuit includes a qubit encoder configured to receive a spatial-mode qubit and convert the spatial-mode qubit to a temporal-mode qubit and an optical interconnect configured to receive and transmit the temporal-mode qubit. The system further includes a second photonic integrated circuit, itself including a qubit decoder configured to receive the temporal-mode qubit and convert the temporal-mode qubit back into the spatial-mode qubit.
The various embodiments described herein include methods, devices, and circuits for reducing or minimizing current crowding effects in manufactured superconductors. In some embodiments, a superconducting circuit includes: (i) a first component; (ii) a second component; (iii) a third component; and (iv) a superconducting connector electrically connecting the first component, the second component, and the third component, the connector including a first section that splits at a splitting end into a second section and a third section. The first section connecting to the first component at a first end and widening in accordance with an electrical current streamline prior to the splitting end.
A modular distributed cryogenic distribution system, comprising: a common chamber housing cryogenic fluid conduits; and a plurality of cryochambers connected to the common chamber. A method of operating a modular distributed cryogenic distribution system comprising a common chamber housing cryogenic fluid conduits, and plural cryochambers connected to the common chamber, includes raising one the plurality of cryochambers room temperature while a second one of the plurality of cryochambers operates at a cryogenic temperature.
The various embodiments described herein include an integrated generalized Mach-Zehnder Interferometer (GMZI) to process a quantum state of light. A quantum state of light comprising one or more photons can be received by a first coupler network in the GMZI. Using the first coupler network, the quantum state of light is distributed to one or more of a plurality of waveguide arms in the GMZI. The phase of the quantum state of light is adjusted using a plurality of phase shifters in the GMZI. The phase is adjusted for portions of the quantum state of light in one of the plurality of waveguide arms. The phase-adjusted quantum light is received by a second coupler network in the GMZI. Using the second coupler network, the quantum state of light is combined onto one or more outputs of the waveguide arms. The combined quantum light from the one or more outputs of the waveguide arms is outputted.
In some implementations, a photonic integrated circuit can include a plurality of input ports to input light, such as a quantum state of light that comprises one or more photons, into the PIC. In addition, the PIC may include a waveguide network that includes a crossing network to combine light, and optical couplers that are coupled to the crossing network. Photonic integrated circuit can further include output ports to output the light.
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
G06N 10/20 - Models of quantum computing, e.g. quantum circuits or universal quantum computers
G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
The various embodiments described herein include a phase shifter that can have a first electrode that has a distributed shape. The phase shifter can include a second electrode. The phase shifter can include an optical waveguide between the first electrode and the second electrode. Further, the phase shifter can include an active electro-optical material that propagates light, and phase shifts the light.
G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
H01Q 3/36 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elementsArrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the distribution of energy across a radiating aperture varying the phase by electrical means with variable phase-shifters
94.
METHOD AND STRUCTURE TO INCORPORATE MULTIPLE LOW LOSS PHOTONIC CIRCUIT COMPONENTS
A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockets effect phase shifter (e.g., BaTiO3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.
G01R 15/24 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
95.
Fabrication of films having controlled stoichiometry using molecular beam epitaxy
A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.
H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H10N 69/00 - Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group
An optical device includes a first multi-mode waveguide, a first optical coupler coupled to the first multi-mode waveguide, the first coupler being tapered and curved, and a first single-mode waveguide having a first end coupled to the first optical coupler. The optical device maybe used in an optical delay device. A method of propagating light in a first multi-mode waveguide toward a first optical coupler, propagating the light in the first optical coupler toward a first single-mode waveguide, the first optical coupler being tapered and curved, and propagating the light along the first single-mode waveguide is also disclosed.
G02B 6/28 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
An electronic component having an asymmetric impedance is provided. The component includes first, second and third branches that connect at a common node. The component includes a first portion of superconducting material disposed along the first branch and a second portion of superconducting material disposed along the second branch. The component includes a first device disposed along the first branch and configured to transition the second portion of the superconducting material to a non-superconducting state when a current between a first terminal of the first device and a second terminal of the first device exceeds a first threshold value and a second device disposed along the second branch and configured to transition the first portion of the superconducting material to a non-superconducting state when a current between a first terminal of the second device and a second terminal of the second device exceeds a second threshold value.
The present disclosure provides a circuit that includes a first component and a plurality of superconducting wires thermally-coupled to the first component. The superconducting wires of the plurality of superconducting wires are arranged and configured such that a threshold superconducting current for each superconducting wire is dependent on an amount of heat received from the first component. The circuit further includes a dielectric material separating the plurality of superconducting wires from one another. A superconducting wire nearest the first component among the plurality of superconducting wires is more than a phonon mean free path of the dielectric material from the first component. The circuit further includes control circuitry electrically-coupled to the plurality of superconducting wires and configured to provide current to each of the plurality of superconducting wires.
Embodiments herein relate generally to fabricating electro-optic devices such as phase shifters and switches. An electro-optic device includes an interlayer and a ferroelectric electro-optic layer. The interlayer generates a strain in the ferroelectric electro-optic layer such that an in-plane lattice constant of the ferroelectric electro-optic layer is longer than an out-of-plane lattice constant of the ferroelectric electro-optic layer. In some embodiments, a device includes a first cladding layer, a first electrode, a second electrode, a waveguide structure comprising a first material, and a second cladding layer.
G02F 1/05 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect with ferro-electric properties
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
