Monitoring system is proposed for monitoring the space inside and/or outside a motor vehicle. The monitoring system comprises a plurality of photoelectric sensor elements adapted to generate a 3-dimensional mapping of objects in said space, sensor elements being electrically connected to a substantially transparent carrier layer adapted to be disposed between first and second substantially transparent layers to form substantially transparent laminate structure for use in one or more windows and/or roof panel of said motor vehicle.
An optoelectronic apparatus comprises an at least partially transparent first cover, a second cover and at least one first layer segment, in particular intermediate layer segment, which is arranged between the first cover and the second cover. The first layer segment carries an arrangement of a plurality of optoelectronic light sources. The arrangement of the plurality of optoelectronic light sources has a defined shape with a defined contour and the first layer segment has the same shape and the same contour as the arrangement of the plurality of optoelectronic light sources.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.
An optoelectronic device comprises an at least partially transparent intermediate layer, in particular a transparent foil, and a plurality of optoelectronic light sources arranged on or embedded in the intermediate layer, and at least one of the following: a preferably non-transparent top layer, in particular a coloured foil, arranged on an upper surface of the intermediate layer, the top layer comprises a plurality of apertures which are aligned with the light sources, so that light from a light source can be radiated to the front through the aperture which is aligned with the light source, a filtering layer, in particular configured to operate as a neutral density filter, arranged on an upper surface of the top layer or the upper surface of the intermediate layer, a non-transparent or at least partially transparent background layer, in particular a coloured foil, arranged on a bottom surface of the intermediate layer.
B60K 35/60 - Instruments characterised by their location or relative disposition in or on vehicles
F21S 8/00 - Lighting devices intended for fixed installation
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component has a semiconductor body with an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face. The arrangement further includes an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components and is absorbent or reflective of the electromagnetic radiation.
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
H10H 29/03 - Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
According to an aspect described herein, a device is proposed for electronically driving an LED comprising a data signal line, a threshold signal line, and a select signal line. Further provided is an LED electrically connected in series with a dual-gate transistor and together therewith between first and second potential terminals. A first control gate of the dual gate transistor is connected to the threshold line. The device also includes a select latch circuit comprising a charge latch connected to a second control gate of the dual gate transistor and to a current line contact of the dual gate transistor, and a control transistor comprising a control terminal connected to the select signal line.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
An optoelectronic device, in particular an at least partially transparent pane for example of a vehicle, comprises a first layer, in particular an intermediate layer arranged between a cover layer and a carrier layer, at least one electronic or optoelectronic component, which is at least partially or completely embedded in the first layer and at least one structured conductor layer. A first portion of the conductor layer is arranged on an upper surface of the first layer and a second portion of the conductor layer is arranged on a top surface of the electronic or optoelectronic component and is in contact with an electric contact of the electronic or optoelectronic component. The electric contact, in particular a contact pad, is arranged on the top surface.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
B60K 35/00 - Instruments specially adapted for vehiclesArrangement of instruments in or on vehicles
It is provided a window of a vehicle, optoelectronic circuits, in particular optoelectronic circuits for a window of a vehicle and a method for manufacturing a window of a vehicle including at least one optoelectronic component. It is further provided a display comprising at least one display module each comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a μLED. In addition, a method for manufacturing a display module comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a μLED, is provided.
B60K 35/00 - Instruments specially adapted for vehiclesArrangement of instruments in or on vehicles
B60K 35/60 - Instruments characterised by their location or relative disposition in or on vehicles
H01B 3/30 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances plasticsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances resinsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances waxes
H01B 7/00 - Insulated conductors or cables characterised by their form
H01B 13/10 - Insulating conductors or cables by longitudinal lapping
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A luminophore having the general empirical formula X′1-xA′y(Al1+zA′3-z)O4:E′ that crystallizes in a tetragonal crystal system. X′ may be Mg, Ca, Sr, Ba, and combinations thereof; A′ may be Li, Na, K, Rb, Cs, and combinations thereof; E′ may be Eu, Ce, Yb, Mn, and combinations thereof; 0
The Trustees of Columbia University in the City of New York (USA)
Inventor
Owen, Jonathan
Anc, Maria J.
Raukas, Madis
Treadway, Joseph
Swarnakar, Anindya
Mcmurtry, Brandon
Abstract
In an embodiment a quantum dot structure includes a core having a III-V-compound semiconductor material, an intermediate region having a III-V-compound semiconductor material at least partially surrounding the core, a shell having a III-V-compound semiconductor material at least partially surrounding the core and the intermediate region and a passivation region having a II-VI-compound semiconductor material at least partially surrounding the shell, wherein the core, the intermediate region, and the shell form a quantum well structure.
An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/109 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
H01L 31/118 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
The present invention relates to an LED backlighting system comprising a substrate, an optoelectronic semiconductor chip assembly, a reflector and a diffuser element. The optoelectronic semiconductor chip assembly is disposed on an upper side of the substrate. The reflector has a through-hole that extends between a lower opening on an underside of the reflector and an upper opening on an upper side of the reflector. The reflector is disposed on the upper side of the substrate so that the underside of the reflector is facing the upper side of the substrate. The optoelectronic semiconductor chip assembly is disposed in the through-hole of the reflector. The diffuser element has an upper side and an underside. The diffuser element is disposed above the upper side of the reflector so that the underside of the diffuser element is facing the upper side of the reflector.
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
The invention relates to a laser projection arrangement. The arrangement includes a sub-mount carrier with a main surface and at least one edge-emitting laser arranged on the sub-mount. The at least one edge-emitting laser is facing the sub-mount and includes at least one laser facet that is located at a predefined distance from the main surface of the sub-mount. A planar light circuit with at least one light guide has an inlet and is arranged on the sub-mount such that the at least one light guide and the inlet is located at the predefined distance from the main surface of the sub-mount facing the at least one laser facet.
An optoelectronic device includes an optoelectronic semiconductor component having an active region configured to generate light and having a light emitting surface through which the generated light is emittable from the semiconductor component, the light emitting surface being arranged on a top surface of the semiconductor component, a converter centered above the light emitting surface and configured to convert the generated light into converted light of at least one other wavelength and an adhesive fixing the converter to the top surface of the semiconductor component, wherein a contour line, projected onto the top surface of the semiconductor component, completely circumvents the converter in a circumferential direction and lies completely within the light emitting surface, wherein the adhesive is arranged between the light emitting surface and the converter and/or in the circumferential direction around the converter.
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
16.
OPTOELECTRONIC SEMICONDUCTOR DEVICE, OPTOELECTRONIC SEMICONDUCTOR APPARATUS, METHOD OF OPERATING THE OPTOELECTRONIC SEMICONDUCTOR DEVICE, AND BIOSENSOR
An optoelectronic semiconductor component (10) includes a semiconductor stack (109) in which a surface-emitting laser diode (103) and a photodetector (105) are placed vertically on top of one another. The optoelectronic semiconductor component (10) additionally includes an electric power source (149) that is adapted to modify a current intensity applied to the surface-emitting laser diode (103), thus allowing an emission wavelength to be modified.
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/062 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/02255 - Out-coupling of light using beam deflecting elements
G01S 17/58 - Velocity or trajectory determination systemsSense-of-movement determination systems
G01S 17/34 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
17.
SENSOR ARRANGEMENT AND METHOD FOR DETERMINING A CO2 CONTENT IN A GIVEN ENVIRONMENT
In various embodiments, a sensor arrangement for sensing an absolute CO2 level in a given environment may include a light source, an absorption path, a light detector, and an amplifier. The absorption path may be configured to communicate with the given environment, arranged such that a light beam passes through the absorption path, and may have a length ranging from 5 mm to 20 mm. The light detector may be arranged to detect the light beam configured to emerge from the absorption path. The light detector may produce an output signal corresponding to a measured value for the absolute CO2 content in the given environment. The amplifier may be electrically coupled to the light detector and configured to have an output signal corresponding to the absolute CO2 content in the given environment.
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
18.
µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
19.
Interbonded components, method for detaching components from interbonded components, and method for producing interbonded components
In an embodiment a component assembly includes a plurality of components, a carrier, wherein the components are secured on the carrier by a connecting layer, wherein, for each component, the connecting layer forms at least one supporting structure at which the connecting layer is adjacent to the component, and a sacrificial layer arranged regionally between the components and the connecting layer, wherein one portion of the components is assigned to a first group, wherein a further portion of the components is assigned to a second group, and wherein the components of the first group are different than the components of the second group in respect of a coverage with the sacrificial layer.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor
20.
COMPONENT WITH IMPROVED CONNECTION STRUCTURE AND METHOD FOR PRODUCING A COMPONENT
A component may include a semiconductor body, an insulation structure, and a connection structure. The semiconductor body may have a first semiconductor layer, a second semiconductor layer, and an active zone located therebetween. The connection structure may have a connection layer in direct electrical contact with the second semiconductor layer. The insulation structure may adjoin both the second semiconductor layer and the connection layer. The insulation structure may laterally surround and may partially cover the connection layer in top view. The connection structure may have through-contacts in electrical contact with the connection layer and along a vertical direction, which extend throughout the insulation structure. The component may have a back side formed as a mounting surface, which is structured and formed, at least in regions, by surfaces of the connection structure. The through-contacts may be formed as individual, one-piece contact columns or as integral parts of a continuous contact layer.
The disclosure relates to a halogen lamp replacement, in particular for car headlights, having a carrier plate which is covered on both main surfaces by structured electrically conductive layers, to which at least one respective light-emitting component, in particular at least one respective light-emitting-diode chip, is attached, the carrier plate being designed to dissipate heat generated by the light-emitting components to a heat sink formed by a coupling structure.
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 41/151 - Light emitting diodes [LED] arranged in one or more lines
F21S 41/19 - Attachment of light sources or lamp holders
F21S 45/47 - Passive cooling, e.g. using fins, thermal conductive elements or openings
F21Y 107/90 - Light sources with three-dimensionally disposed light-generating elements on two opposite sides of supports or substrates
22.
Quantum dot structure, method for producing a quantum dot structure, and light emitting device
A quantum dot structure is provided, the quantum dot structure comprising: a nanocrystalline core from a first semiconductor material, a nanocrystalline shell from a second semiconductor material on the nanocrystalline core, at least one encapsulation layer on the nanocrystalline shell, wherein functional groups are present within the at least one encapsulation layer and/or on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner. Further, a method for producing a quantum dot structure and a light emitting device are provided.
A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 μm to 80 μm.
A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.
A nanoparticle is specified. The nanoparticle comprises a nanocrystal configured to convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, a first encapsulation comprising pores which reach into or through the first encapsulation, and a second encapsulation which is different from the first encapsulation, wherein the second encapsulation abuts at least one of the pores. Furthermore, a structure comprising a plurality of nanoparticles and a method for producing nanoparticle is specified.
A structure comprising a nanoparticle converting electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength range, an interlayer at least partially surrounding the nanoparticle, and an encapsulation at least partially surrounding the interlayer is specified, wherein the interlayer comprises a plurality of first amphiphilic ligands and a plurality of second amphiphilic ligands and the first ligands and the second ligands are intercalated.
Furthermore, an agglomerate comprising a plurality of structures, an optoelectronic device as well as methods for producing a structure and an agglomerate are disclosed.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/54 - Encapsulations having a particular shape
H01L 33/56 - Materials, e.g. epoxy or silicone resin
27.
STRUCTURE, OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING A STRUCTURE
A structure, an optoelectronic device and a method for producing a structure are disclosed. In an embodiment, a structure comprises a first nanoparticle comprising at least one semiconductor material. The first nanoparticle is chromophoric in a first wavelength range and emissive in a second wavelength range. The structure further comprises a plurality of second nanoparticles. The second nanoparticles are non-chromophoric in the first wavelength range and in the second wavelength range.
A method for preparing a wavelength converting film is disclosed. The method comprising mixing at least one phosphor, a polysiloxane and optionally an organic solvent, thereby preparing a mixture, placing the mixture on a substrate, pre-curing the mixture on the substrate, thereby preparing a wavelength converting film. Furthermore, a wavelength converting film is disclosed, a method for preparing a light-emitting device and a light-emitting device.
The invention relates to a light-emitting component, comprising: at least one conversion element comprising: at least one first material selected from the group consisting of polyazene, rubrene and derivatives thereof; at least one second material, the second material being a quantum dot, and at least one light source, the at least one light source emitting at least one photon in the range of 3.5 eV to 2.5 eV, preferably in the range of 3.0 eV to 2.55 eV. The invention further relates to the use of a light-emitting component according to the invention.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
30.
SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER DEVICE AND PROJECTION DEVICE
A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
31.
Optoelectronic component and method for producing an optoelectronic component
An optoelectronic component may include a support and multiple optoelectronic semiconductor chips that can be actuated individually and independently of one another. Each semiconductor chip may include a semiconductor layer sequence. Each semiconductor chip may have an electrically insulating passivation layer on the respective lateral surface of the semiconductor layer sequence. The semiconductor chip(s) are assigned to a first group, which may be paired with a common boundary field generating device arranged on the passivation layer face facing away from the semiconductor layer sequence at an active zone for each semiconductor chip of the first group. The boundary field generating device is designed to at least temporarily generate an electric field in the boundary regions of the active zone so that a flow of current through the semiconductor layer sequences can be controlled in the boundary regions during the operation of the semiconductor chips of the first group.
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/00 - Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
A ceramic wavelength converter assembly may include two first layers having an undoped host material or a doped host material, two second layers having a barrier material and being disposed between the two first layers, and a third layer having an undoped host material or a doped host material and being disposed between the two second layers. The two first layers may include the undoped host material and the third layer may include the doped host material, or the two first layers may include the doped host material and the third layer may include the undoped host material. At least one of the two first layers may have a patterned structure.
The invention relates to an optoelectronic device comprising - a transmitter (1) designed to emit electromagnetic radiation (2) and to be operated with an input voltage (UI), and - a receiver (3) designed to receive the electromagnetic radiation (2) and to provide an output voltage (UO), - the transmitter (1) comprising at least one surface emitter (10), and - the receiver (3) comprising at least one photodiode (30).
The invention relates to a method for producing a growth substrate, having the following steps: - providing a polycrystalline substrate which has a nitride compound semiconductor material, - applying at least one surface layer onto a main surface of the polycrystalline substrate, wherein - the at least one surface layer has a nitride compound semiconductor material, - the at least one surface layer is designed for an epitaxial growth of an epitaxial semiconductor layer sequence, and - annealing the polycrystalline substrate with the at least one surface layer applied thereon at high temperatures. The invention additionally relates to a growth substrate and to a method for producing a plurality of optoelectronic semiconductor chips.
A method for producing optical elements (1) is specified, comprising the following steps: – providing a first matrix material (2) having first conversion particles (3), – sedimenting the first conversion particles (3) in the first matrix material (2) such that the first conversion particles (3) agglomerate in a first region of the first matrix material (7) and a second region of the first matrix material (8) is free of the first conversion particles (3), – structuring the second region of the first matrix material (8) such that a structured outer surface of the second region of the first matrix material (8) forms a plurality of optical lenses (10), – singulating the first matrix material (2) to form optical elements (1), wherein – each optical element (1) comprises at least one of the optical lenses (10). Furthermore, a method for producing radiation-emitting semiconductor components, an optical element and a radiation-emitting semiconductor component are specified.
An optoelectronic device is specified having – a transmitter (1) which is designed to emit electromagnetic radiation (2) and to be operated at an input voltage (UI), – a support (7) for the transmitter (1), said support (7) having a top surface (71) and a bottom surface (72), – a first receiver (3) which is designed to receive at least part of the electromagnetic radiation (2) and to supply at least part of an output voltage (UO), wherein – the transmitter (1) comprises at least one surface emitter (10), – the at least one surface emitter (10) of the transmitter (1) is mounted on the top surface (71) of the support (7) and radiates at least part of the electromagnetic radiation (2) through the support (71), – the first receiver (3) comprises at least one photodiode (30), and – the first receiver (3) is arranged on the bottom surface (72) of the support (7).
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01L 31/0475 - PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
The invention relates to an optoelectronic device comprising - a transmitter (1) designed to emit electromagnetic radiation (2) and to be operated with an input voltage (UI), and - a receiver (3) designed to receive the electromagnetic radiation (2) and to provide an output voltage (UO), - the transmitter (1) comprising an edge emitter (10), and - the receiver (3) comprising at least one photodiode (30).
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01L 31/0475 - PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
38.
SEMICONDUCTOR LIGHT SOURCE, COVER BODY AND METHOD TO PRODUCE THE SAME
A semiconductor light source (1) is disclosed. The semiconductor light source (1) comprises an optoelectronic semiconductor chip (2) configured to emit radiation (R), and a cover body (5) applied on the optoelectronic semiconductor chip (2), wherein the cover body (5) comprises a light-transmissive base body (3), wherein, seen in cross-section, the light-transmissive base body (3) comprises a plurality of recesses (32) with inclined side faces (33), the recesses (32) start at an emission side (30) of the light-transmissive base body (3) remote from the optoelectronic semiconductor chip (2) and narrow towards the optoelectronic semiconductor chip (2), and wherein a mirror coating (4) is provided on top regions (34) of the recesses (32) next to the emission side (30), whereas bottom regions (35) of the recesses (32) closest to the optoelectronic semiconductor chip (2) are free of the mirror coating (4).
In at least one embodiment, the optoelectronic semiconductor device (1) comprises: a carrier (2), a first semiconductor laser (31) configured to emit a first laser radiation (L1) and applied on the carrier (2), and a multi-mode waveguide (4) configured to guide the first laser radiation (L1) and also applied on the carrier (2), wherein the multi-mode waveguide (4) comprises at least one furcation (40) and a plurality of branches (41, 42) connected by the at least one furcation (40).
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
40.
ARRANGEMENT AND METHOD FOR OPERATING AN ARRANGEMENT
The invention relates to an arrangement (21). The arrangement (21) comprises a multitude of radiation sources (32), each radiation source (32) being designed to emit electromagnetic radiation in the UV range when operated, and a control unit (30) designed to control at least one first radiation source (33) of the radiation sources (32) and a second radiation source (34) of the radiation sources (32) separately of each other. The invention further relates to a method for operating an arrangement (21).
The invention relates to a vital sensor, in particular a pulse sensor (1), comprising at least one pixelated emitter array (3) having a first (3.1) and at least one second pixel (3.2), each of which is designed to emit light of one wavelength range towards a projection surface (11). The vital sensor also comprises at least one optical element (5), which is arranged between the at least one pixelated emitter array (3) and the projection surface (11) and is designed to deflect light from the first pixel (3.1) onto a first region of the projection surface (11.1) and light from the at least one second pixel (3.2) onto a second region, different from the first, of the projection surface (11.2). At least one photodetector (2) is designed to detect the light emitted by the pixels (3.1, 3.2) and reflected by the projection surface (11), and an evaluation unit (4) is designed to activate the first (3.1) and the at least one second pixel (3.2) in a pulsed manner and temporally sequentially in order to determine a first reference value.
A picture element for a display device includes a first and a second supply connection, a light-emitting semiconductor device arranged between the first and the second supply terminal, and a comparison unit having a first and a second input and an output. The comparison unit is configured to adjust a voltage at the output in dependence on a comparison of a voltage applied to the first input and a voltage applied to the second input. The picture element also includes a supply switch-configured to control a current flow between the first and the second supply terminal via the light-emitting semiconductor device depending on the voltage applied at the output of the comparison unit. The picture element further includes a selection input, a data input, a memory element and a control switch.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/3258 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.
In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.
SSS). The invention further relates to a method for selecting a dielectric layer stack and to a method for selecting a conversion material of a conversion element for a radiation-emitting semiconductor component.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
The invention relates to an optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first region (101) with a first conductivity, a second region (102) with a second conductivity and an active region (103) which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body (10). The semiconductor body (10) has a mounting side (10A) and side surfaces (10B) running transversely to the mounting side (10A). Side surfaces (10B) running parallel to the resonator axis are covered by an electrically insulating passivation (50). A cooling layer (30) which is designed to dissipate at least part of the power loss created in the semiconductor body (10) during operation is arranged on a side of the passivation (50) facing away from the semiconductor body (10). The invention also relates to an optoelectronic module (2).
342-xx6-xxx:RE, wherein - EA is an element or a combination of elements selected from the group of divalent elements, - D is an element or a combination of elements selected from the group of tetravalent elements, - E is is an element or a combination of elements selected from the group of trivalent elements, - RE is an activator element or a combination of activator elements, and - 0 ≤ x ≤ 2. The invention also relates to a method for producing a luminophore (1) and to a radiation-emitting component (10).
A driver circuit (10) is specified, comprising a first and a second supply terminal (11, 12), a first node (13), a discharging transistor (16) between the first node (13) and the first supply terminal (11) and a first number N of laser diode arrangements (20, 30). A laser diode arrangement of the first number N of laser diode arrangements (20, 30) comprises a charging transistor (21, 31), a second node (22, 32), a second number M of laser diodes (23-26, 33-36) and a third number L of capacitors (27, 37). The charging transistor (21, 31) is disposed between the second supply terminal (12) and the second node (22, 32). The second number M of laser diodes (23-26, 33-36) is disposed between the second node (22, 32) and the first node (13). The third number L of capacitors (27, 37) is disposed between the second node (22, 32) and the first supply terminal (11). Moreover, a method is specified for operating a driver circuit (10), in particular such a driver circuit (10).
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
H01S 5/062 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
49.
Method for Producing a Structured Wavelength Conversion Layer and Optoelectronic Device with a Structured Wavelength Conversion Layer
In an embodiment a method for producing a structured wavelength conversion layer includes providing a first wavelength conversion layer with wavelength converting properties such that electromagnetic radiation of a first wavelength range is converted into electromagnetic radiation of a second wavelength range, structuring of the first wavelength conversion layer into first regions and second regions, wherein the wavelength converting properties of the first wavelength conversion layer are impaired or removed in the first regions after structuring.
The invention relates to an optoelectronic component (10). The optoelectronic component comprises a leadframe (20) having a plurality of contacts (22), further a circuit chip (30) having a driver circuit (36) and a bottom side (32) facing the leadframe and an upper side (34) facing away from the leadframe. A radiation-emitting semiconductor chip (40) is arranged at the upper side of the circuit chip, wherein a rewiring layer (50) is arranged between the circuit chip and the radiation-emitting semiconductor chip for electrically contacting the driver circuit and the radiation-emitting semiconductor chip. Connections (42) of the radiation-emitting semiconductor chip are electrically connected to the rewiring layer via contact bumps (52), and the rewiring layer is electrically connected to the contacts of the leadframe via wire connections (54). The invention also relates to an illumination unit (100) and to a production method.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/56 - Materials, e.g. epoxy or silicone resin
The invention relates to an optoelectronic semiconductor component (1) which comprises a semiconductor body (10) having a first region (101) of a first conductivity, a second region (102) of a second conductivity, and an active region (103). The semiconductor device (1) also comprises a first metallic heat sink (21), a second metallic heat sink (22) and a thin film insulation layer (30). The first heat sink (21) and the second heat sink (22) are arranged on a mounting side (10A) of the semiconductor body (10). The first heat sink (21) makes electrical contact with the first area (101). The thin film insulation layer (30) electrically insulates the first heat sink (21) from the second heat sink (22). The thin film insulation layer (30) is in direct contact with the first heat sink (21) and the second heat sink (22). The invention also relates to a method for producing an optoelectronic semiconductor component (1).
The invention relates to an optoelectronic semiconductor layer sequence comprising: - an active layer for generating electromagnetic radiation, and - at least one filter layer arranged for at least partial absorption of the electromagnetic radiation generated by the active layer with wavelengths smaller than a predetermined cut-off wavelength. The invention also relates to an optoelectronic semiconductor component.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A converter device (1) has a primary coil (2), a secondary coil (3) and a first semiconductor layer (6). The primary coil (2) and the secondary coil (3) are each flat, each has at least one winding and each is coaxially arranged. The primary coil (2) is arranged on a bottom face (10) of the first semiconductor layer (6) and the secondary coil (3) is arranged on a top face (9) of the first semiconductor layer (6).
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
A method for producing a structured wavelength conversion layer is disclosed. In an embodiment the method comprises the following steps: - providing a first wavelength conversion layer with wavelength converting properties such that electromagnetic radiation of a first wavelength range is converted into electromagnetic radiation of a second wavelength range, - structuring of the first wavelength conversion layer into first regions and second regions, wherein the wavelength converting properties of the wavelength conversion layer are impaired or removed in the first regions after the structuring. Furthermore, an optoelectronic device with a structured wavelength conversion layer is specified.
The invention relates to a semiconductor light emitting chip (100) comprising a semiconductor layer sequence (1) having an active layer (10) which is provided and arranged to generate light when in operation and to couple out via a light outcoupling surface (11), a filter layer (6) deposited on the light outcoupling surface, and a contact structure (8) deposited on the light outcoupling surface in a region free of the filter layer. The invention also relates to a method for producing said light-emitting semiconductor chip (100).
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
56.
RADIATION-EMITTING COMPONENT HAVING A CONVERTER LAYER AND METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT HAVING A CONVERTER LAYER
In an embodiment a component includes a semiconductor chip, a converter layer and a grid structure, wherein the semiconductor chip is configured to generate electromagnetic radiation, wherein the converter layer is configured to convert at least one portion of the electromagnetic radiation, wherein the grid structure is configured to suppress lateral optical crosstalk, the grid structure having a grid frame and openings enclosed by the grid frame, wherein the grid structure only adjoins the converter layer, wherein the openings of the grid structure are free of a material of the converter layer, and wherein optical elements are arranged in the openings.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An optoelectronic apparatus (20) comprises an array of optoelectronic semiconductor devices (10). The optoelectronic apparatus (20) comprises a semiconductor layer stack (105) comprising a first semiconductor layer (110) of a first conductivity type, an active zone (115), and a second semiconductor layer (120) of a second conductivity type. Adjacent optoelectronic semiconductor devices (10) are separated by separating elements (125) vertically extending through the semiconductor layer stack (105). The optoelectronic semiconductor devices (10) are configured to emit generated electromagnetic radiation (15) via a first main surface (111) of the first semiconductor layer (110). The optoelectronic apparatus (20) further comprises portions of a metal layer (130) arranged on a side of the first semiconductor layer (110) facing away from the active zone (115) and being arranged at positions of the separating elements (125).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
The invention relates to an optoelectronic device comprising a lead frame having a first metal region and at least one second metal region spaced apart from same, wherein the first and the at least one second metal region form a first cavity on a first side of the lead frame. The optoelectronic device also comprises at least one electrical component, which is arranged in the first cavity and is potted with a potting compound, and which electrically connects the first metal region and the at least one second metal region to one another, as well as at least one optoelectronic component which electrically connects the first metal region and the second metal region on a side of the lead frame facing away from the first cavity, or at least one optoelectronic component which electrically connects the first metal region and a third metal region on a side of the lead frame facing away from the first cavity.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
59.
OPTOELECTRONIC COMPONENT, COMPONENT UNIT AND METHOD FOR PRODUCING THE SAME
An optoelectronic component (1) is described comprising - at least one semiconductor body (2) including a first semiconductor region (3), a second semiconductor region (5) and an active region (4) therebetween, - a cover element (6), which laterally surrounds the at least one semiconductor body (2) and has at least one patterned side surface (6A) facing away from the at least one semiconductor body (2), - a reflection element (7), which at least partly covers the at least one patterned side surface (6A), wherein the active region (4) is at least partly laterally surrounded by the first semiconductor region (3). Moreover, a component unit (19) comprising at least two optoelectronic components (1) and a method for producing a plurality of optoelectronic components (1) or at least one component unit (19) are described.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/54 - Encapsulations having a particular shape
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
60.
ARRANGEMENT FOR DISINFECTING AIR AND METHOD FOR DISINFECTING AIR
An arrangement (20) for disinfecting air comprises a first number N of semiconductor bodies (10 to 13) realized as radiation-emitting semiconductor bodies. The arrangement (20) is configured such that air in a beam path (30) of the first number N of semiconductor bodies (10 to 13) is disinfected and is moved by an air flow (29) generated by heat emitted by the first number N of semiconductor bodies (10 to 13). Furthermore, a method for disinfecting air is specified.
The invention relates to an optoelectronic component comprising at least one light-emitting semiconductor component (3) which is provided with a converter layer (5) on a surface emitting light, wherein a cost-effective production is made possible by providing a part of the converter layer (5) with a wavelength-selective mirror (6, 6', 6'').
A light-emitting component includes a connection board with a mounting side. The light-emitting component also includes a light source. The light source is fastened and electrically connected to the connection board on the mounting side. The light-emitting component further includes a cover which covers the connection board in places on its mounting side and laterally surrounds the light source. The light-emitting component additionally includes an optical element. The optical element has a central region which is arranged downstream of the light source on the mounting side of the connection board. A provision is made to prevent impingement of light in the central region of the optical element.
F21V 7/28 - Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
H10H 20/855 - Optical field-shaping means, e.g. lenses
F21S 41/153 - Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
63.
OPTOELECTRONIC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD
In at least one embodiment, the optoelectronic semiconductor device (1) comprises at least one active semiconductor fin (2) which is configured to emit radiation by electroluminescence, wherein the at least one active semiconductor fin (2) starts from a base plane (20), and seen in top view of the base plane (20), the at least one active semiconductor fin (2) runs along at least two different directions (E).
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
64.
SEMICONDUCTOR LASER DIODE AND METHOD FOR PRODUCING A SEMICONDUCTOR LASER DIODE
The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.
Disclosed is a layer stack (20) for a semiconductor chip (21), the layer stack (20) comprising a semiconductor layer (22) with a first region (23), a second region (24) and an active region (25) between the first region (23) and the second region (24), at least one intermediate layer (26) which covers the semiconductor layer (22) in places, and a side edge (27) of the semiconductor layer (22), wherein the side edge (27) extends transversely or perpendicularly to a main extension plane of the layer stack (20), wherein the first region (23) is doped with a first dopant and the second region (24) is doped with a second dopant, the first region (23) has a contact region (28), the intermediate layer (26) has a recess (29) extending in a stacking direction (z) over the contact region (28), wherein the stacking direction (z) runs transversely to the main extension plane of the layer stack (20), and the layer stack (20) has a cover layer (30), which comprises at least one metal, wherein, at least in places, wherein the cover layer (30) covers the contact region (28), the side edge (27), the intermediate layer (26) and side walls in the recess (29) of the intermediate layer (26). Also disclosed is a method for producing a layer stack (20) for a semiconductor chip (21).
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/109 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A laser system (20) for measuring distance is specified, the laser system (20) comprising a laser (21), a beam splitter (22) designed to split laser radiation emitted by the laser (21) into first laser radiation (L1) and second laser radiation (L2), with the first laser radiation (L1) and the second laser radiation (L2) each comprising a proportion of the laser radiation emitted by the laser (21), a modulation module (23) designed to alter the intensity of the first laser radiation (L1) for the duration of a first time interval (Z1), and a detector (24), with the beam splitter (22) being arranged between the laser (21) and the modulation module (23), the laser (21) being designed to continuously emit laser radiation, the frequency of which changes at least during a second time interval (Z2), and the detector (24) being configured to detect at least a portion of the first laser radiation (L1) reflected at an object (29) and at least a portion of the second laser radiation (L2). Moreover, a method of measuring distance is specified.
G01S 17/34 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
G01S 17/58 - Velocity or trajectory determination systemsSense-of-movement determination systems
67.
OPTOELECTRONIC LIGHTING DEVICE AND PRODUCTION METHOD
The invention relates to an optoelectronic lighting device comprising a carrier, more particularly a leadframe, at least one light-emitting semiconductor element arranged on the carrier and configured to emit pulsed light in a wavelength range, more particularly an infrared wavelength range, a first potting compound, which is substantially transparent to said wavelength range and covers at least one light emission region of the semiconductor element; and a second potting compound, which is substantially transparent to said wavelength range and adjoins the first potting compound as viewed in an emission direction of the semiconductor element. In this case, the first potting compound has a higher thermal stability than the second potting compound.
The invention relates to a measuring method, comprising the following steps: - transmitting a transmission signal which comprises at least one light pulse, wherein an amplitude of an intensity of the light pulse is modulated with a modulation frequency, - detecting a receiving signal that comprises at least a part of the transmission signal reflected by an external object, - selecting at least one frequency component of the receiving signal, which corresponds to the modulation frequency of the transmission signal, - determining a distance to the external object based on a time difference between the transmission of the transmission signal and the detection of the selected frequency component of the receiving signal. The invention also relates to a measuring method.
H01S 3/106 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
H01S 3/08 - Construction or shape of optical resonators or components thereof
69.
ARRANGEMENT FOR A REAR LAMP FOR A MOTOR VEHICLE AND METHOD FOR OPERATING AN ARRANGEMENT FOR A REAR LAMP FOR A MOTOR VEHICLE
An arrangement (20) for a rear lamp for a motor vehicle is specified, the arrangement (20) comprising a first module (21), a second module (22) and a third module (23), wherein the first module (21), the second module (22) and the third module (23) are arranged in succession along a lateral direction (x) so that the first module (21) and the second module (22) overlap at least at points, the first module (21) and the second module (22) are translucent at least at points, the first module (21), the second module (22) and the third module (23) each comprise a multiplicity of light-emitting diodes (24), the first module (21) and the second module (22) each comprise a multiplicity of conductor tracks (25) between the light-emitting diodes (24), and at least one of the three modules (21, 22, 23) comprises a multiplicity of luminous segments (28), with each of the luminous segments (28) having at least one of the light-emitting diodes (24), at least two of the luminous segments (28) having different sizes and each luminous segment (28) comprising a group of light-emitting diodes (24). Moreover, a method for operating an arrangement (20) for a rear lamp for a motor vehicle is specified.
B60Q 1/38 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating change of drive direction using immovably-mounted light sources, e.g. fixed flashing lamps
F21S 43/13 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source characterised by the type of light source
B60Q 1/26 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
B60Q 1/50 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating other intentions or conditions, e.g. request for waiting or overtaking
B60Q 1/00 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
H04N 13/395 - Volumetric displays, i.e. systems where the image is built up from picture elements distributed through a volume with depth sampling, i.e. the volume being constructed from a stack or sequence of 2D image planes
F21S 43/19 - Attachment of light sources or lamp holders
F21S 43/20 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by refractors, transparent cover plates, light guides or filters
The invention relates to a method for transferring optoelectronic semiconductor components (1) from a first carrier (10) to a second carrier (11), comprising the following steps: providing a multiplicity (2) of optoelectronic semiconductor components (1) on the first carrier (10); providing the second carrier, the second carrier (11) having on the top side (11a) thereof a contact structure (3) with a multiplicity of periodically arranged contact pads (4); picking up the multiplicity (2) of optoelectronic semiconductor components (1) by means of a transfer unit (12) comprising placing the transfer unit (12) onto a top side of the optoelectronic semiconductor components (1), the opposite side relative to the first carrier (10); lifting off the multiplicity (2) of optoelectronic semiconductor components (1) from the first carrier (10); and placing a first subset (2a) of the multiplicity (2) of optoelectronic semiconductor components (1) on a first subset of the multiplicity of periodically arranged contact pads (4).
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
71.
METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR LASER CHIPS, AND SEMICONDUCTOR LASER CHIP
A method for producing a multiplicity of semiconductor laser chips (20), the method comprising growing a semiconductor layer (21) having an active region (22), forming a multiplicity of laser chip regions (29), each laser chip region (29) having a part of the active region (22), a part of the semiconductor layer (21), a first mirror (25) and a second mirror (28), applying a sacrificial layer (27) to the laser chip regions (29), shaping at least one support region (30) per laser chip region (29) within the sacrificial layer (27), applying an auxiliary carrier (31) to the sacrificial layer (27), singulating the laser chip regions (29) into semiconductor laser chips (20) on the auxiliary carrier (31), each semiconductor laser chip (20) having a first region (23) of the semiconductor layer (21) and a second region (24) of the semiconductor layer (21), the first region (23) and the second region (24) having mutually different extents parallel to the main plane of extent of the semiconductor layer (21), and the first mirror (25) and the second mirror (28) adjoining the second region (24), removing the sacrificial layer (27), and simultaneously transferring at least some of the semiconductor laser chips (20) to a carrier (32). A semiconductor laser chip (20) is additionally specified.
An optical sensor arrangement, for example for a LiDAR system, comprises an emitter unit (1) and a receiver unit (3). The emitter unit (1) comprises a semiconductor laser (10) configured to emit coherent electromagnetic radiation having at least two wavelengths. Furthermore, the emitter unit (1) is configured to direct the emitted electromagnetic radiation at a remote target (5), the receiver unit (3) comprising at least one optical sensor (31, 32) configured to selectively detect electromagnetic radiation depending on the at least two wavelengths. The receiver unit (3) is arranged relative to the emitter unit (1) and configured such that electromagnetic radiation scattered or reflected by the remote target (5) is detectable on the optical sensor (31, 32).
The invention relates to a vehicle window, comprising a lighting assembly (30), which has a plurality of optoelectronic components (33, 34, 35) on a flexible film (32). Furthermore, a structure composed of a first pane (10) and a second pane (11) disposed on the first pane is provided, said panes being connected by at least one at least partially transparent connecting layer (21, 22, 23). The structure comprises an at least partially transparent inner region (3) and an edge region (2) surrounding the inner region. According to the invention, the lighting assembly (30) is disposed laterally in the edge region (2) of the structure, and the edge region (2) with the lighting assembly is designed to direct light produced by the optoelectronic components (33, 34, 35) along the at least partially transparent connecting layer (21, 22, 23) into the at least partially transparent inner region (3).
B32B 17/10 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B60Q 3/66 - Arrangement of lighting devices for vehicle interiorsLighting devices specially adapted for vehicle interiors characterised by optical aspects using light guides for distributing light among several lighting devices
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
74.
Optical Component, Optoelectronic Semiconductor Component and Method for Producing an Optical Component
In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO3/2 units.
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
75.
RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP
A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A mirror (20) for a laser (21) is specified, the mirror (20) comprising a layer stack (22) having at least a first layer (23) containing a first material and at least a second layer (24) containing a second material, the first material having a first refractive index and the second material having a second refractive index, the first refractive index and the second refractive index differing by at least 0.2, and the reflectivity (R) of the mirror (20) in the event of a first exit medium (25) adjoining the mirror (20), the first exit medium being translucent at least at points to electromagnetic radiation at a specifiable wavelength, differing by less than 10% from the reflectivity (R) of the mirror (20) in the event of a second exit medium (26) adjoining the mirror (20), the second exit medium differing from the first exit medium (25) and being translucent at least at points to electromagnetic radiation at the specifiable wavelength, for a wavelength range of at least ±20 nm about the specifiable wavelength. Moreover, a laser (21) and a laser component (40) are specified.
The invention relates to a lidar sensor device (1), comprising a first laser emitter (2a) configured to emit pulsed light of a first wavelength and at least one second laser emitter (2b, 2c) configured to emit pulsed light of at least one second wavelength different from the first, each in the direction of an object (O) located ahead of the laser emitters. The sensor device furthermore comprises a reception unit (3) comprising at least one photodetector (4), and a first bandpass filter (5a) and at least one second optical bandpass filter (5b, 5c), in particular narrowband optical bandpass filter, wherein the first and the at least one second optical bandpass filter are arranged between the object and the at least one photodetector, and wherein the first bandpass filter (5a) is designed to let through essentially light of the first wavelength and the at least one second bandpass filter (5b, 5c) is designed to let through essentially light of the at least one second wavelength. The laser emitters (2a, 2b, 2c) may be used to generate a coded signal pattern with which the sensor device (1) transmits light in the direction of the object in each measurement cycle. The echo signal, in the form of the coded signal pattern, reflected from the object and detected by the reception unit (3) may then be assigned unambiguously to the measurement cycle of the distance measurement and additionally has an improved signal-to-noise ratio. Coding may in this case take place by means of a time-division multiplexing method performed on the transmitted light pulses, a wavelength-division multiplexing method performed on the transmitted light pulses, or a combination of both methods. It is possible to suppress potential crosstalk or interference caused by signals from other sensor devices.
A laser component (20) is provided, the laser component (20) comprising at least one first laser diode (21), and at least one second laser diode (22), the first laser diode (21) and the second laser diode (22) each comprising an active zone (23) in a semiconductor layer (24), the active zones (23) each extend parallel to the main plane of extension of the respective laser diode (21, 22), the semiconductor layers (24) each comprise a first side (25) and a second side (26) facing away from the first side (25), the first side (25) and the second side (26) each extending parallel to the main plane of extension of the respective laser diode (21, 22), the second laser diode (22) being arranged on the first laser diode (21) in a vertical direction (z) which is perpendicular to the main plane of extensions of the laser diodes (21, 22), the first laser diode (21) having a larger extent in its main plane of extension than the second laser diode (22) in its main plane of extension and at least one electrical contact (28) is arranged in a contact region (27) of the first laser diode (21) which is arranged on the side of the first laser diode (21) facing the second laser diode (22). A laser device (38) is also disclosed.
In an embodiment an apparatus includes at least one optoelectronic laser configured to provide excitation radiation to a sample, the excitation radiation being generated by an electric current flowing through the at least one optoelectronic laser, a transistor configured to modulate the electric current flowing through the at least one optoelectronic laser in order to switch on and off generation of the excitation radiation and a spectrometer configured to analyze Raman light scattered from the sample in response to exposing the sample to the excitation radiation, wherein the Raman light includes one or more spectral components, wherein the spectrometer includes a diffraction element configured to split the Raman light into the spectral components, and wherein the diffraction element includes at least a photonic crystal or a plasmonic Fabry Perot filter.
The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/56 - Materials, e.g. epoxy or silicone resin
In at least one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) for generating laser radiation (L) and a transparent substrate (3). The semiconductor layer sequence (2) has a first facet (21) which is designed for emitting the laser radiation (L), and a second facet (22) opposite the first facet (21). The substrate (3) has a first lateral surface (31) on the first facet (21) and a second lateral surface (32) on the second facet (22). The first lateral surface (31) is orientated at least in part obliquely to the first facet (21) and/or the second lateral surface (32) is orientated at least in part obliquely to the second facet (22).
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/10 - Construction or shape of the optical resonator
The invention relates to a method for producing an optoelectronic assembly, involving: - providing at least one component (1) of the optoelectronic assembly (10), - providing a source carrier (2) with a functional material (3) on the source carrier (2) lower face (2b) facing the at least one component, - detaching a portion (31) of the functional material (3) by irradiating same with a laser beam (5) through a source carrier (2) upper face (2a) facing away from the at least one component (1), - securing the detached portion (31) of the functional material (3) to the component (1) face facing the source carrier (2), and - completing the optoelectronic assembly (10).
The invention relates to a semiconductor component having a functional semiconductor layer sequence with a surface. A layer is applied on a partial region of the surface, said layer having a first partial region and a second partial region surrounding the first partial region. The first partial region has a defined thickness with a surface which is essentially plane-parallel to the surface of the functional layer sequence. A thickness of the second partial region decreases, in particular continuously, starting from the first partial region.
H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
84.
ARRANGEMENT, METHOD FOR ASSEMBLING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT
The invention relates to an arrangement, comprising - an optoelectronic component (1) having a radiation passage surface (2) and a housing top surface (3) which surrounds the radiation passage surface (2) in lateral directions (4) at least at points, and - a cover (5), which covers the radiation passage surface (2) and the housing top surface (3) at least at points, wherein - the cover (5) is designed to be partially removed such that the radiation passage surface (2) is at least partially exposed and the housing top surface (3) remains covered at least at points by a remainder (6) of the cover (5).
An optoelectronic semiconductor device may include a semiconductor layer sequence, a directionally reflective layer being arranged on the first main surface of the semiconductor layer sequence, a first contact structure comprising a first current spreading structure arranged on a first surface of a first semiconductor layer of the semiconductor layer sequence, a second contact structure comprising a second current spreading structure arranged on a first surface of a second semiconductor layer of the layer stack, wherein the first current spreading structure and the second current spreading structure each consist of at least one transparent conductive oxide. Moreover, a method for producing an optoelectronic semiconductor device is described.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
86.
METHOD FOR PRODUCING A GROWTH SUBSTRATE, AND GROWTH SUBSTRATE
The invention relates to a method for producing a growth substrate, comprising the following steps: - providing a substrate (2) having a main surface, - arranging a layer sequence (3) on the main surface of the substrate (2), the layer sequence (3) comprising at least one semiconductor layer (4) which has a III-V compound semiconductor material, and - annealing the layer sequence (3) on the substrate (2), the layer sequence (2) having at least one intermediate layer (5) and/or a cover layer (5) being arranged on the layer sequence (2). The invention also relates to a growth substrate.
The invention relates to an optoelectronic component (100) comprising a carrier (200), an optoelectronic semiconductor chip (400) and a metal cover (500). The optoelectronic semiconductor chip (400) has a top (401) with a light-emitting surface (410). The optoelectronic semiconductor chip (400) is disposed on a top (201) of the carrier (200) such that the light-emitting surface (410) faces away from the top (201) of the carrier (200). The cover (500) is disposed above the top (201) of the carrier (200) and above the optoelectronic semiconductor chip (400). The cover (500) has an opening (510), which is disposed above the light-emitting surface (410). A dam (700), which surrounds the light-emitting surface (410), is disposed on the top (401) of the optoelectronic semiconductor chip (400).
The invention relates to a radiation-emitting semiconductor body (1), having - a first semiconductor region (2) of a first doping type, which has a first material composition, - a second semiconductor region (3) of a second doping type, which has a second material composition, - an active region (4), which is located between the first semiconductor region (2) and the second semiconductor region (3), and - a first intermediate region (7), which is located between the first semiconductor region (2) and the active region (4), wherein - the active region (4) comprises a plurality of quantum well layers (5) and a plurality of barrier layers (6), which are arranged alternatingly one above the other, - the barrier layers (6) have a third material composition, - the first intermediate region (7) comprises at least one first blocking layer (8) and at least one first intermediate layer (9), and - the first blocking layer (8) has a fourth material composition and the first intermediate layer (9) has a fifth material composition. The invention also relates to a laser diode and to a light-emitting diode.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
89.
SURFACE-MOUNTABLE OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND LEADFRAME ASSEMBLY
In at least one embodiment, the optoelectronic semiconductor component (1), which is surface-mountable, comprises - a metallic first leadframe part (21), - a metallic second leadframe part (22), - an electrically insulating main body (3), which mechanically connects the leadframe parts (21, 22) to one another and directly surrounds the leadframe parts (21, 22), and - an optoelectronic semiconductor chip (4), wherein - the leadframe parts (21, 22) each have a component side (25) and an opposite mounting side (26), - the semiconductor chip (4) is attached to the component side (25) of the first leadframe part (21), - the first leadframe part (21), when seen in plan view of the component side (25), has at least one tongue (24), which runs to an edge of the main body (3) and ends within the main body (3), and - the tongue (24) runs at a distance from a mounting plane (30), in which the mounting sides (26) lie.
A carrier (90) having a moulded body (3) and a leadframe (10) is specified. The carrier has a first electrode (1) and a second electrode (2), the first electrode having a first subregion (11) of the leadframe, a second subregion (12) of the leadframe and an electrical connection (13). The electrical connection connects the first subregion to the second subregion. The first subregion (11) is laterally spaced from the second subregion (12) by an intermediate region (14), the leadframe (10) having at least one subsection (20, 20N), at least regions of which are situated in the intermediate region (14) and therefore in lateral directions between the first subregion (11) and the second subregion (12) of the first electrode. At least part of the intermediate region (14) is filled by the moulded body (3) or is immediately adjacent to the moulded body (3), the electrical connection (13) being embedded in the moulded body (3). The subsection (20, 20N) of the leadframe (10) is neither a subregion of the first electrode nor a subregion of the second electrode. In addition, a component (100) having such a carrier (90) and a method for manufacturing such a carrier (90) are specified.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
91.
OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING THE SAME
An optoelectronic component (10) is specified, comprising a semiconductor body (6) with an active region (4) suitable for emission of radiation and comprising a quantum well structure, wherein the quantum well structure comprises at least one quantum well layer (41) and barrier layers (42), a first electrical contact (1) and a second electrical contact (2), wherein the active region (4) comprises at least one intermixed region (44) and at least one non-intermixed region (43).
An optoelectronic component (10) is specified, comprising a semiconductor body (6) with an active region (4) suitable for emission of radiation and comprising a quantum well structure, wherein the quantum well structure comprises at least one quantum well layer (41) and barrier layers (42), a first electrical contact (1) and a second electrical contact (2), wherein the active region (4) comprises at least one intermixed region (44) and at least one non-intermixed region (43).
The at least one quantum well layer (41) and the barrier layers (42) are at least partially intermixed in the intermixed region (44), such that the intermixed region (44) comprises a larger electronic bandgap than the at least one quantum well layer (41) in the non-intermixed region (43). The first electrical contact (1) is a metal contact arranged on a radiation exit surface of the semiconductor body (6), wherein the intermixed region (44) is arranged below the first contact (1) in the vertical direction. Further, a method for producing the optoelectronic component (10) is specified.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
92.
Optoelectronic Device with Multiple Epitaxial Layers, and Production Method
In an embodiment an optoelectronic device includes an epitaxial layer stack having at least a first epitaxial layer and a second epitaxial layer arranged above the first epitaxial layer, wherein the following layers are embedded in the epitaxial layer stack a first semiconductor layer of a first conductivity type, an active layer arranged above the first semiconductor layer and configured to generate light, and a second semiconductor layer of a second conductivity type arranged above the active layer, wherein an interface between the first epitaxial layer and the second epitaxial layer extends at least partially through the first semiconductor layer and/or the second semiconductor layer, and wherein the active layer is embedded in a non-doped barrier layer, the barrier layer covering one or more side surfaces of the active layer.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
93.
OPTOELECTRONIC SEMICONDUCTOR ELEMENT AND OPTOELECTRONIC COMPONENT
The invention relates to an optoelectronic semiconductor element comprising the following features: - a semiconductor chip (1) for generating electromagnetic radiation, which chip has: a radiation decoupling surface (11) via which first electromagnetic radiation (41) is emitted in a first wavelength range during operation; - a conversion layer (2) which is disposed directly on the radiation decoupling surface (11) of the semiconductor chip (1), wherein - the conversion layer (2) completely covers the radiation decoupling surface (11) and has a main surface (21) which is opposite the radiation decoupling surface (11), wherein - the conversion layer (2) comprises at least one luminescent substance which is designed to convert at least a portion of the first electromagnetic radiation (41) into second electromagnetic radiation (42) of a second wavelength range, and wherein - the second wavelength range is different from the first wavelength range; and - an optical feedback element (3) which is disposed directly on the main surface (21) of the conversion layer (2), wherein - the optical feedback element (3) is designed to reflect at least a portion of the first and/or the second electromagnetic radiation, and - the optical feedback element (3) has a multiplicity of openings (31) via which regions of the main surface (21) of the conversion layer (2) are exposed. The invention also relates to an optoelectronic component.
The invention relates to a method for producing a plurality of optoelectronic semiconductor components (1), said method having the following steps: A) providing a radiation-permeable source carrier (20) having a wavelength conversion layer (11) located on a front surface (20A) of the source carrier (20), and a target carrier (30) having a plurality of semiconductor bodies (10) designed to emit electromagnetic radiation; B) irradiating regions of a target region (40A) of the source carrier (20) with electromagnetic radiation (40) from a rear side (20B) opposite the front side (20A), regions of the wavelength conversion layer (11) being detached from the source carrier (20) and being applied as a wavelength conversion element (110) to a semiconductor body (10) opposite the target region (40A). The invention also relates to an optoelectronic semiconductor component (1).
The invention relates to a method for transferring a component, more particularly an optoelectronic component, wherein at least one component is provided, which is fastened to a first carrier by means of a supporting holder, the component having a transfer region on a side facing away from the first carrier. A light exit region of a light-guiding lifting element is positioned facing the transfer region, and the lifting element produces a first laser light pulse. A transfer material between the light exit region and the transfer region is thereby melted, so that the light exit region is bonded to the transfer region by the melted transfer material. The component is lifted and is positioned over a depositing region. Then a second laser light pulse is produced, so that the transfer material is melted again, and the lifting element moves away from the transfer region before the transfer material solidifies, so that the component remains on the depositing region.
The invention relates to a backlighting unit (10) comprising at least one semiconductor chip (2) and a potting body (4), wherein - the semiconductor chip (2) is designed to generate electromagnetic radiation, - the potting body (4) has at least one depression (40) - the semiconductor chip (2) is located outside the depression (40) and overlaps with the depression (40) as seen from a top view of the potting body (4), and - the semiconductor chip (2) is a side-emitting semiconductor chip. Furthermore, the backlighting unit (10) has a reflector (3), the reflector (3) having at least one frame-like partial region (3T), the opening of which is filled by the material of the potting body (4) and encloses the semiconductor chip (2) and the depression (40) of the potting body (4) in lateral directions. The potting body (4) protrudes along the vertical direction beyond the partial region (3T), the potting body (4) covering at least part of or all of the edges (3R) of the partial region (3T) when viewed from above.
H01L 33/54 - Encapsulations having a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The invention relates to a method for applying an electrical connecting material or flux to at least one electrical connection surface of an optoelectronic component. The method comprises the steps of: providing a first carrier on which the electrical connecting material or flux is arranged; providing a second carrier on which the at least one optoelectronic component is arranged; placing the first carrier opposite to the second carrier so that the electrical connecting material or flux faces the at least one electrical connection surface and is arranged at a distance therefrom; and implementing pulsed irradiation of the first carrier using laser light such that at least zones of the electrical connecting material or flux are detached from the first carrier and fall on the at least one electrical connection surface of the optoelectronic component.
In the present disclosure, a lighting device (10) comprises: a housing frame (11), a cavity (12) which is enclosed by the housing frame (11), a light-emitting diode (LED, 13) which is mounted within the cavity (12), and a layered structure (14) which is configured to cover the cavity (12). The layered structure (14) comprises an aperture for light emitted by the LED (13). Therein, the layered structure (14) is configured to generate energy (Vhrv) from part of the light emitted by the LED (13). The device (10) further comprises: a capacitor (20) which is configured to store the energy (Vhrv) generated by the layered structure (14), the capacitor (20) being mechanically and electrically coupled to the layered structure (14).
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
F21S 41/19 - Attachment of light sources or lamp holders
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
In an embodiment a semiconductor component includes a carrier, at least one semiconductor chip arranged on the carrier, the semiconductor chip having at least one first electrical contact at a main surface of the semiconductor chip facing away from the carrier, an electrically insulating layer arranged on the carrier and at least one electrical connection layer led by the electrically insulating layer to the first electrical contact, wherein the electrically insulating layer includes a photopatternable material.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
100.
METHOD FOR PRODUCING A PLURALITY OF SURFACE-EMITTING SEMICONDUCTOR LASER DIODES
The invention relates to a method for producing a plurality of surface-emitting semiconductor laser diodes, comprising the following steps: - providing a growth substrate (1), - applying a mask layer (2) with a plurality of openings (21) onto the growth substrate (1), so that regions of the growth substrate (1) are exposed through the openings (21), - applying a first intermediate layer (3) at least onto the exposed regions of the growth substrate (1), the first intermediate layer (3) having a quasi two-dimensional material, and - epitaxial growing of an epitaxial semiconductor layer sequence (42) on the first intermediate layer (3), wherein the epitaxial semiconductor layer sequence has an active layer (5) for generating electromagnetic radiation.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
patents
