B22F 1/142 - Thermal or thermo-mechanical treatment
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Provided is a method of manufacturing a sulfide-based inorganic solid electrolyte material including Li, P, and S as constituent elements, the method including: a preparation step of preparing a raw material inorganic composition (A) including at least lithium sulfide, phosphorus sulfide, and a crystal nucleating agent; and a vitrification step of mechanically processing the raw material inorganic composition (A) to vitrify the raw material inorganic composition (A).
C03C 4/14 - Compositions for glass with special properties for electro-conductive glass
C03C 10/00 - Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
3.
SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL, SOLID ELECTROLYTE MEMBRANE, ALL-SOLID-STATE LITHIUM ION BATTERY, DEVICE FOR MANUFACTURING SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL, AND METHOD OF MANUFACTURING SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL
Provided is a sulfide-based inorganic solid electrolyte material where a particle size d50 at which a cumulative frequency in a volume-based cumulative frequency distribution curve measured using a laser diffraction scattering particle size distribution analyzer is 50% is 0.1 μm or more and 100 μm or less, in which an attachment area measured using the following (method) is 10% or less.
The mill apparatus comprises: a container to which a discharge pipe is connected; a mill mechanism that is arranged in the container and pulverizes powder; a gas feeding mechanism that has a function of feeding a gas into the container; and a wing mechanism for adjusting an amount of gas discharged from the discharge pipe. The wing mechanism has a plurality of wings arranged point-symmetrically with an axis. The amount of gas discharged from the discharge pipe is adjusted by changing a gap between two wings adjacent to each other of the plurality of wings.
B02C 17/18 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls Details
The hydrogen sulfide producing device of the present invention includes a reactor (1-3) having a liquid sulfur filling part (1-2) inside, a mantle heater (1-4) that is a first heating unit for heating liquid sulfur to produce sulfur vapor, and a hydrogen supply pipe (1-5) that is a hydrogen supply member connected to the reactor (1-3), in which an interior of the reactor (1-3) includes a catalyst support member (1-6) provided above the liquid sulfur filling part (1-2) and a heat-insulating member (1-7) provided above the catalyst support member (1-6).
A diphosphorus pentasulfide composition according to one embodiment of the present invention has a crystallinity of 40% to 80% as calculated from the spectrum obtained by X-ray diffractometry that uses a CuKα ray as a radiation source. In the DSC curve of this diphosphorus pentasulfide composition obtained by a measurement that is performed using a differential scanning calorimeter under the conditions of a starting temperature of 25°C, a measurement temperature range from 30°C to 350°C, a heating rate of 5°C/min and an argon atmosphere of 100 ml per minute, an endothermic peak is found in the temperature range from 280°C to 300°C, and the melting enthalpy of the endothermic peak is 60 J/g to 100 J/g.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
C01B 25/14 - Sulfur, selenium, or tellurium compounds of phosphorus
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
A lithium sulfide producing device (1-1) of the present invention is a lithium sulfide producing device for producing lithium sulfide by reacting hydrogen sulfide with lithium hydroxide, the lithium sulfide producing device including a reactor (1-3) having a lithium hydroxide filling part (1-2) inside, a heating unit for heating lithium hydroxide, and a hydrogen sulfide supply member connected to the reactor (1-3).
A method for producing hydrogen sulfide by reacting sulfur gas and hydrogen gas in a reaction tank (101) to synthesize hydrogen sulfide, the method including: step (A) for supplying a gas mixture of sulfur gas with hydrogen gas to the reaction tank (101); step (B) for supplying hydrogen gas to the reaction tank (101); and step (C) for reacting the sulfur gas with the hydrogen gas to synthesize hydrogen sulfide. The amount of sulfur in the reaction tank (101) is detected and the amount of the hydrogen gas supplied in step (B) is adjusted according to the result.
Disclosed is a method for producing a sulfide-based inorganic solid electrolyte material, the method comprising a step of obtaining a sulfide-based inorganic solid electrolyte material in a glass state by mechanically processing a starting material composition of the sulfide-based inorganic solid electrolyte material, the starting material composition containing lithium sulfide and a phosphorus sulfide composition, thereby vitrifying the components, while having the components chemically react with each other. With respect to this method for producing a sulfide-based inorganic solid electrolyte material, the phosphorus sulfide composition has three or more peaks within the 2θ range of 22.5° to 24.5° in the X-ray diffraction analysis spectrum as obtained by X-ray diffraction analysis.
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
C01B 25/14 - Sulfur, selenium, or tellurium compounds of phosphorus
C03B 8/00 - Production of glass by other processes than melting processes
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
Provided are copper particles having a carbon content of 0.1-2.5 mass% as calculated by the following method. [Method for calculating carbon content] The carbon content is calculated by weighing out 0.5 g of the copper particles, adding 1.5 g of tungsten powder, 0.5 g of iron powder, and 0.5 g of tin powder as combustion improving agents, and using a carbon/sulfur analysis device to perform the measurement in a stream of oxygen gas under conditions in which the flow rate is 3L/min, the combustion method is radiofrequency heating, the combustion time is 60 sec, and the detection method is the infrared absorption method.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Provided is an inorganic solid electrolyte material including sulfide-based inorganic solid electrolyte particles. In a frequency distribution of circularity of the particles where the circularity of the particles in the material is plotted on a horizontal axis and a number-based frequency is plotted on a vertical axis, a 10% cumulative value D10 is 0.54 to 0.80. In addition, a number-based median size d50 of the particles in the material is 0.1 to 10 μm.
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
13.
GEL FOR DISPERSING PARTICLES, GEL CONTAINING DISPERSED PARTICLES, METHOD FOR PRODUCING GEL FOR DISPERSING PARTICLES, AND METHOD FOR PRODUCING GEL CONTAINING DISPERSED PARTICLES
A gel for dispersing particles which comprises a polymer (A) and a solvent (B) and in which particles can be dispersed. The gel for dispersing particles has a three-dimensional network structure formed by the polymer (A), and the solvent (B) is contained in the network structure. The solvent (B) includes a polyol compound (B1).
C08J 3/09 - Making solutions, dispersions, lattices or gels by other methods than by solution, emulsion or suspension polymerisation techniques in organic liquids
14.
PHOSPHORUS SULFIDE COMPOSITION FOR SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL, METHOD FOR PRODUCING SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL, AND METHOD OF QUALITY CONTROL FOR PHOSPHORUS SULFIDE COMPOSITION
A phosphorus sulfide composition for a sulfide-based inorganic solid electrolyte material, the composition having a reactivity determined by a predetermined method of 5.0 °C/min or greater.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
C01B 25/14 - Sulfur, selenium, or tellurium compounds of phosphorus
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulatorsProcesses of manufacture thereof
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
Provided is a sulfide-based inorganic solid electrolyte material including Li, P, and S as constituent elements, in which in a spectrum obtained by 31P-NMR measurement, when a total area of peaks derived from a PS4 structure is represented by 1, a total area of peaks derived from a P2S6 glass structure is 0.1 or more.
Provided is a method of separating an inorganic material from crushing balls to which the inorganic material is attached, the method including: a step of causing the crushing balls to collide against a mesh member.
A method of manufacturing an inorganic material includes: a step (A) of preparing a first inorganic material as a raw material; a step (B) of obtaining a second inorganic material by crushing the first inorganic material using a ball mill to obtain fine particles of the first inorganic material, the ball mill including a cylindrical container and crushing balls; and a step (C) of separating the second inorganic material from the crushing balls to which the second inorganic material is attached, in which the step (B) includes a step (B1) of putting the first inorganic material and the crushing balls into the cylindrical container and subsequently rotating the cylindrical container about a cylindrical shaft and a step (B2) of moving the cylindrical container such that the first inorganic material moves in the cylindrical shaft direction.
Provided is a sulfide-based inorganic solid electrolyte material having lithium ionic conductivity, in which the sulfide-based inorganic solid electrolyte material has a particle shape, and when a mode diameter in a number average particle size distribution of the sulfide-based inorganic solid electrolyte material that is obtained from an observed image of a scanning electron microscope (SEM) is represented by Dm [μm] and a particle size corresponding to a cumulative frequency of 90% in the number average particle size distribution is represented by D90 [μm], a value of D90/Dm is 1.6 or more and 8.0 or less.
Provided is a lithium nitride manufacturing device (10) for heating a lithium member (9) in a nitrogen atmosphere to nitride the lithium member (9) such that lithium nitride is manufactured, the lithium nitride manufacturing device including: a reaction tank (1) where a nitriding reaction of the lithium member (9) is performed; a heating unit (2) that heats the lithium member (9); an atmosphere control unit (3) that controls a dew point in the reaction tank (1); and an atmosphere cooling unit (4) that cools an inside of the reaction tank (1).
C01B 21/06 - Binary compounds of nitrogen with metals, with silicon, or with boron
B01J 15/00 - Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet materialApparatus specially adapted therefor
B01J 19/18 - Stationary reactors having moving elements inside
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
20.
SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL, SOLID ELECTROLYTE MEMBRANE, ALL-SOLID-STATE LITHIUM-ION BATTERY, APPARATUS FOR MANUFACTURING SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL, AND METHOD FOR MANUFACTURING SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL
5050 that is 0.1-100 μm (inclusive) when the cumulative frequency in a cumulative frequency distribution curve by volume measured using a laser diffraction scattering particle size distribution measuring device is 50%, an adhesion area measured according to the (Method) below being 10% or less. (Method) (1) A SUS304 plate measuring 8 cm vertically and 9 cm laterally and having, as measured according to JIS B 0601 (2013), an arithmetic average roughness Ra of 0.017-0.023 μm (inclusive), a maximum height Rz of 0.14-0.18 μm (inclusive), and a ten-point average roughness Rzjis of 0.12-0.16 μm (inclusive), is arranged with the vertical side thereof tangential to a horizontal plane such that the plate is inclined by 45° relative to the horizontal plane. (2) Using a sieve having an opening size of 250 μm, 10 g of the sulfide-based inorganic solid electrolyte material is sifted onto the SUS304 plate from a height of 10 cm from the horizontal plane, such that the sulfide-based inorganic solid electrolyte material covers the entire SUS304 plate. (3) One zirconia ball weighing 47 g is dropped three times from a height of 5 cm from the upper end of the SUS304 plate, such that the zirconia ball hits only the upper end of the SUS304 plate and does not hit the sulfide-based inorganic solid electrolyte material-covered surface of the SUS 304 plate. (4) The sulfide-based inorganic solid electrolyte material-covered surface of the SUS 304 plate after impact is measured, and the ratio thereof to the area of one surface of the SUS304 plate (the adhesion area) is calculated.
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
B02C 15/12 - Mills with at least two discs and interposed balls or rollers mounted like ball or roller bearings
C03B 8/00 - Production of glass by other processes than melting processes
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
The device for producing hydrogen sulfide according to the present invention comprises: a reactor (1-3) equipped with a liquid sulfur filling part (1-2) inside; a mantle heater (1-4) that is a first heating means of heating liquid sulfur to produce sulfur vapor; and a hydrogen supply pipe (1-5) that is a hydrogen supply member connected to the reactor (1-3). The inside of the reactor (1-3) is equipped with a catalyst support member (1-6) disposed above the liquid sulfur filling part (1-2) and a heat insulating member (1-7) disposed above the catalyst support member (1-6).
This device (1-1) for producing lithium sulfide produces lithium sulfide by reacting hydrogen sulfide and lithium hydroxide and comprises: a reactor (1-3) having a lithium hydroxide-filled section (1-2) in the interior thereof; a heating means for heating the lithium hydroxide; and a hydrogen sulfide supply member that is connected to the reactor (1-3).
Provided is a phosphorus sulfide composition for a sulfide-based inorganic solid electrolyte material, the phosphorus sulfide composition including P4S10 and P4S5, in which when a total content of P4S10, P4S5, P4S7, and P4S3 in the phosphorus sulfide composition is represented by 100 mass %, a content of P4S10 calculated from a solid 31P-NMR spectrum is 70 mass % or more and 99 mass % or less.
A method of manufacturing an inorganic material includes: a step (A) of preparing a first inorganic material as a raw material; and a step (B) of obtaining a second inorganic material by crushing the first inorganic material using a ball mill to obtain fine particles of the first inorganic material, the ball mill including a cylindrical container and crushing balls, in which the step (B) includes a step (B1) of putting the first inorganic material and the crushing balls into the cylindrical container and subsequently rotating the cylindrical container about a cylindrical shaft and a step (B2) of moving the cylindrical container such that the first inorganic material moves in the cylindrical shaft direction.
B02C 17/04 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls with unperforated container
B02C 17/14 - Mills in which the charge to be ground is turned over by movements of the container other than by rotating, e.g. by swinging, vibrating, tilting
A blower (100) blows inert gas. A crusher (200) repeats vitrifying plural kinds of inorganic compounds (A1) by mechanical energy and blowing up the plural kinds of vitrified inorganic compounds (A1) by the inert gas blown from the blower (100). At least some of the plural kinds of inorganic compounds (A1) blown up by the inert gas enter into a first collector (300). The first collector (300) returns the at least some of the plural kinds of inorganic compounds to the crusher (200). A system (S) (for example, a pipe (Pa), a buffer tank (110), a pipe (Pb), a pipe (Pc), and a pipe (Pi) described below) circulates the inert gas from the blower (100) through the crusher (200) and the first collector (300) to the blower (100).
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/02 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes
Provided is a method of manufacturing lithium nitride including: a step (A) of preparing a lithium member in which inorganic particles are embedded; and a step (B) of nitriding the lithium member by bringing the lithium member into contact with nitrogen in a state where the inorganic particles are embedded.
A method of producing an inorganic material (S10) according to the present invention includes a vitrification step (S12) of applying shearing stress and compressive stress to a mixed powder (MP) of a plurality of kinds of inorganic compound powders by using a ring ball mill mechanism (70) to vitrify at least a part of the mixed powder (MP); and a dispersion step (S13) of dispersing the vitrified mixed powder (MP) after the vitrification step (S12), where a combined step of the vitrification step (S12) and the dispersion step (S13) is performed a plurality of times to obtain a vitrified inorganic material powder from the mixed powder.
B02C 17/18 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls Details
The method of manufacturing a sulfide-based inorganic solid electrolyte material, including: (A) preparing a sulfide-based inorganic solid electrolyte material in a vitreous state; and (B) annealing the sulfide-based inorganic solid electrolyte material in the vitreous state using a heating unit. Step (B) includes a step (B1) of disposing the sulfide-based inorganic solid electrolyte material in the vitreous state in a heating space, a step (B2) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space while increasing a temperature of the heating unit from an initial temperature T0 to an annealing temperature T1, and a step (B3) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space at the annealing temperature T1, and a temperature increase rate from the initial temperature T0 to the annealing temperature T1 in the step (B2) is 2° C./min or higher.
A drilling sequence data generation device (10) comprises a position acquisition unit (110), a sequence data generation unit (120), and an image output unit (130). The position acquisition unit (110) acquires drilling position data. The drilling position data indicates the position on a facing for each of a plurality of blast holes that are to be formed on the facing. The sequence data generation unit (120) generates, using the drilling position data, first sequence data that indicate the recommended order of the formation sequence for the plurality of blast holes. When generating the first sequence data, the sequence data generation unit (120) uses a model stored in a model storage unit (140). The image output unit (130) generates and outputs image data indicating the recommended order.
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
A sulfide inorganic solid electrolyte material containing Li, P, and S as constituent elements, wherein, in a spectrum obtained by a 314266 glass structure is 0.1 or more.
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
A method for producing an inorganic material, comprising: a step (A) of preparing a first inorganic material to be used as a raw material; a step (B) of crushing the first inorganic material by using a ball mill consisting of a cylindrical container and crushing balls to pulverize the first inorganic material into fine particles and obtain a second inorganic material; and a step (C) of separating the second inorganic material from the crushing balls to which the second inorganic material has adhered, wherein the step (B) includes a step (B1) of rotating the cylindrical container around a cylinder axis after the first inorganic material and the crushing balls have been put into the cylindrical container, and a step (B2) of operating the cylindrical container so that the first inorganic material moves in the direction of the cylinder axis.
The present invention is a method for separating inorganic material from a grinding ball whereto the inorganic material has adhered, the method comprising the step of causing the grinding ball to collide with a mesh member.
C01B 25/14 - Sulfur, selenium, or tellurium compounds of phosphorus
B02C 17/18 - Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls Details
Provided is a lithium nitride composition for a sulfide-based inorganic solid electrolyte material including α-lithium nitride, wherein in a spectrum obtained by X-ray diffraction in which a CuKα ray is used as a radiation source, when a diffraction intensity of a diffraction peak present at a position of a diffraction angle 2θ=23.0±0.3° is represented by Iα and a diffraction intensity of a diffraction peak present at a position of a diffraction angle 2θ=32.0±0.3° is represented by Iβ, a value of Iβ/Iα is 4.50 or lower.
Provided is a diphosphorus pentasulfide composition for a sulfide-based inorganic solid electrolyte material, in which a molar ratio (S/P) of a content of sulfur (S) to a content of phosphorus (P) is 2.40 or higher and 2.49 or lower. In the diphosphorus pentasulfide composition for a sulfide-based inorganic solid electrolyte material, in a DSC curve of the diphosphorus pentasulfide composition obtained by measurement using a differential scanning calorimeter under conditions of a start temperature of 25° C., a measured temperature range of 30° C. to 350° C., a temperature increase rate of 5° C./min, and an argon atmosphere with a flow rate of 100 ml per minute, an endothermic peak is shown in a temperature range of 280° C. or higher and 300° C. or lower, and a half-width of the endothermic peak is 4.1° C. or higher.
Provided is a method of manufacturing a sulfide-based inorganic solid electrolyte material including Li, P, and S as constituent elements, the method including: a preparation step of preparing a raw material inorganic composition (A) including at least lithium sulfide, phosphorus sulfide, and a crystal nucleating agent; and a vitrification step of mechanically processing the raw material inorganic composition (A) to vitrify the raw material inorganic composition (A).
C03C 4/14 - Compositions for glass with special properties for electro-conductive glass
C03C 10/00 - Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
37.
LITHIUM NITRIDE MANUFACTURING DEVICE AND LITHIUM NITRIDE MANUFACTURING METHOD
This lithium nitride manufacturing device (10), for manufacturing lithium nitride by nitriding a lithium member (9) by heating the lithium member (9) in a nitrogen environment, is provided with a reaction tank (1) for carrying out the nitridation reaction of the lithium member (9), a heating means (2) for heating the lithium member (9), an atmosphere control means (3) for controlling the dew point inside of the reaction tank (1), and an atmosphere cooling means (4) for cooling inside of the reaction tank (1).
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
39.
DEVICE FOR PRODUCING INORGANIC MATERIAL AND METHOD FOR PRODUCING INORGANIC MATERIAL
According to the present invention, a blowing unit (100) sends an inert gas. A pulverization unit (200) repeatedly performs a process for vitrifying a plurality of inorganic compounds (A1) by using mechanical energy, and a process for blowing the vitrified plurality of inorganic compounds (A1) upward by using the inert gas sent from the blowing unit (100). At least some of the plurality of inorganic compounds (A1) that have been blown upward by the inert gas enter a first recovery unit (300). The first recovery unit (300) returns the at least some of the plurality of inorganic compounds (A1) to the pulverization unit (200). A system (S) (e.g., piping (Pa), a buffer tank (110), piping (Pb), piping (Pc), and piping (Pi) (described elsewhere)) causes the inert gas to circulate from the blowing unit (100) through the pulverization unit (200) and the first recovery unit (300) and back to the blowing unit (100).
C01B 25/14 - Sulfur, selenium, or tellurium compounds of phosphorus
C03C 10/00 - Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
A method for producing an inorganic material including a step (A) for preparing a first inorganic material to serve as a raw material and a step (B) for finely pulverizing the first inorganic material by crushing the first inorganic material using a ball mill comprising a cylindrical container and crushing balls to obtain a second inorganic material. Step (B) includes a step (B1) for rotating the cylindrical container with the cylinder axis as the axis after having placed the first inorganic material and the crushing balls inside the cylindrical container and a step (B2) for moving the cylindrical container so that the first inorganic material moves in the cylinder axis direction.
C03B 8/00 - Production of glass by other processes than melting processes
C01B 25/14 - Sulfur, selenium, or tellurium compounds of phosphorus
C03C 3/32 - Non-oxide glass compositions, e.g. binary or ternary halides, sulfides, or nitrides of germanium, selenium or tellurium
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
This method for producing lithium nitride comprises a step (A) for preparing a lithium member in which inorganic particles are embedded, and a step (B) for bringing nitrogen into contact with the lithium member, in a state in which the inorganic particles are embedded, to nitride the lithium member.
C01B 21/06 - Binary compounds of nitrogen with metals, with silicon, or with boron
44.
Device and method for evaluating operating conditions of briquetting machine, briquetting machine, method for manufacturing briquette, control device of briquetting machine, control method of briquetting machine, and program
FURUKAWA INDUSTRIAL MACHINERY SYSTEMS CO., LTD. (Japan)
FURUKAWA CO., LTD. (Japan)
Inventor
Tsukada, Koji
Kuronuma, Yu
Abstract
An evaluation device (20) evaluates the operating conditions of a briquetting machine (10). The evaluation device (20) includes an evaluation information acquisition unit (220) and an evaluation data generation unit (230). The evaluation information acquisition unit (220) acquires a plurality of pieces of evaluation information indicating the evaluation results of a plurality of briquettes manufactured under the same manufacturing conditions by the briquetting machine (10). The evaluation data generation unit (230) generates evaluation data that is data obtained by comparing a plurality of pieces of evaluation information with each other.
B30B 11/00 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses
B01J 2/22 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by pressing in moulds or between rollers
B30B 11/16 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses using pocketed rollers, e.g. two co-operating pocketed rollers
B30B 15/00 - Details of, or accessories for, pressesAuxiliary measures in connection with pressing
The method for producing an inorganic material (S10) of the present invention includes a vitrification step (S12) for vitrifying at least part of a mixed powder (MP) by using a ring-ball mill mechanism (70) to apply shear stress and compressive stress to a mixed powder (MP) obtained by mixing powders of multiple types of inorganic compounds and a dispersion step (S13) for dispersing the vitrified mixed powder (MP) after the vitrification step (S12), and a combination of the vitrification step (S12) and dispersion step (S13) is repeated multiple times to obtain a vitrified inorganic material powder from the mixed powder (MP).
C03B 8/00 - Production of glass by other processes than melting processes
B02C 15/12 - Mills with at least two discs and interposed balls or rollers mounted like ball or roller bearings
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
The purpose of the present invention is to provide a diphosphorus pentasulfide composition from which a sulfide-based inorganic solid electrolyte material having improved lithium ion conductivity can be obtained. The present invention pertains to a diphosphorus pentasulfide composition for a sulfide-based inorganic solid electrolyte material, the diphosphorus pentasulfide composition having a molar ratio (S/P) of 2.40-2.49 which is the content of sulfur (S) to the content of phosphorus (P), wherein in a DSC curve of the diphosphorus pentasulfide composition, obtained by measurement using a differential scanning calorimeter under the conditions of a starting temperature of 25°C, a measurement temperature in the range of 30-350°C, a heating rate of 5°C/min, and an argon atmosphere of 100 ml/min, the DSC curve has an endothermic peak in the temperature range of 280-300°C, and the full width at half maximum of the endothermic peak is at least 4.1°C.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
47.
LITHIUM NITRIDE COMPOSITION FOR SULFIDE-BASED INORGANIC SOLID ELECTROLYTE MATERIAL
βααββ is the the diffraction intensity of a diffraction peak present at the position of a diffraction angle of 2θ = 32.0 ± 0.3°, in a spectrum obtained by x-ray diffraction using CuK α rays as a radiation source.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
48.
METHOD FOR PRODUCING SULFIDE INORGANIC SOLID ELECTROLYTE MATERIAL
This production method is for producing a sulfide inorganic solid electrolyte material including Li, P and S as constituent elements. The method includes a preparation step for preparing a material inorganic composition (A) containing at least lithium sulfide, phosphorus sulfide and a crystal nucleator; and a vitrification step for vitrifying the material inorganic composition (A) by subjecting the material inorganic composition (A) to mechanical processing.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
49.
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
To solve this problem, the present invention provides a group III nitride semiconductor substrate which is configured of a group III nitride semiconductor and in which the main surface is a semipolar surface and the surface roughness RMS of the main surface measured in a 5 μm x 5 μm square area is 0.05-1.50 nm inclusive. Also, the present invention can provide a group III nitride semiconductor substrate in which the dark spot density in a CL image of the main surface is 5×106cm-2 or less. By forming a device on the group III nitride semiconductor substrate provided by the present invention, the qualities of the device can be improved.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
2 by emitting helium-cadmium (He—Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature. In a case where devices are manufactured over the free-standing substrate 30, variations in quality among the devices are suppressed.
The present invention provides a method for producing a semi-polar self-supporting substrate, in which a preparation step (S10) wherein a semi-polar seed substrate that is composed of a group III nitride semiconductor is prepared, said seed substrate having a semi-polar surface as a main surface, a group III nitride semiconductor layer formation step (S20) wherein a group III nitride semiconductor layer is formed by epitaxially growing a group III nitride semiconductor on the semi-polar seed substrate, a cut-out step (S30) wherein a semi-polar self-supporting substrate, which has the semi-polar surface as a main surface, is cut out from the group III nitride semiconductor layer, and a processing step (S40) wherein all the remaining group III nitride semiconductor layer is removed from the semi-polar seed substrate on which a part of the group III nitride semiconductor layer remains are performed, and subsequently the group III nitride semiconductor layer formation step and the cut-out step are performed, while reusing the semi-polar seed substrate.
C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
52.
Group III nitride semiconductor substrate and method for manufacturing group III nitride semiconductor substrate
A method for manufacturing a group III nitride semiconductor substrate includes a sapphire substrate preparation step S10 for preparing a sapphire substrate having, as a main surface, a {10-10} plane or a plane obtained by inclining the {10-10} plane at a predetermined angle in a predetermined direction; a heat treatment step S20 for performing a heat treatment over the sapphire substrate while performing a nitriding treatment or without performing the nitriding treatment; a buffer layer forming step S30 for forming a buffer layer over the main surface of the sapphire substrate after the heat treatment; and a growth step S40 for forming a group III nitride semiconductor layer, in which a growth surface has a predetermined plane orientation, over the buffer layer, in which at least one of a plane orientation of the main surface of the sapphire substrate, presence or absence of the nitriding treatment during the heat treatment, and a growth temperature in the buffer layer forming step is adjusted such that the growth surface of the group III nitride semiconductor layer has the predetermined plane orientation.
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
53.
Group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor substrate
There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 μm or more and 1000 μm or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
54.
Method of manufacturing group III nitride semiconductor substrate, group III nitride semiconductor substrate, and bulk crystal
There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
C01B 21/06 - Binary compounds of nitrogen with metals, with silicon, or with boron
55.
Group III nitride semiconductor substrate and method for manufacturing group III nitride semiconductor substrate
A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Provided is an undersea mining base capable of corresponding with slopes and undulations of seabed ore deposits. The undersea mining base includes a seabed mineral mining device configured to form a pit in a seabed ore deposit and a platform equipped with the seabed mineral mining device and capable of self-traveling in at least one of an X direction and a Y direction.
E21B 7/124 - Underwater drilling with underwater tool drive prime mover, e.g. portable drilling rigs for use on underwater floors
E21B 15/02 - Supports for the drilling machine, e.g. derricks or masts specially adapted for underwater drilling
E21B 33/035 - Well headsSetting-up thereof specially adapted for underwater installations
E21B 43/01 - Methods or apparatus for obtaining oil, gas, water, soluble or meltable materials or a slurry of minerals from wells specially adapted for obtaining from underwater installations
E21C 50/00 - Obtaining minerals from underwater, not otherwise provided for
E21B 33/076 - Well headsSetting-up thereof having provision for introducing objects or fluids into, or removing objects from, wells specially adapted for underwater installations
A method for washing a semiconductor manufacturing apparatus component, the method comprising: a first process of disposing a semiconductor manufacturing apparatus component, to which a nitride semiconductor adheres, in a component holding portion inside a reaction tank of a washing apparatus; a second process of introducing a halogen-containing gas from a gas introducing pipe into the reaction tank to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component; a third process of trapping a reaction product generated by a reaction of the halogen-containing gas and the nitride semiconductor in a trapping unit; and a fourth process of discharging the reaction product trapped by the trapping unit from a gas discharging pipe to outside of the reaction tank.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
58.
Method of manufacturing thermoelectric conversion material
A method of manufacturing a thermoelectric conversion material includes a sintering step. In the sintering step, a sintered body of a sintered material (20) is obtained by applying a voltage to a conductive mold (10) in a first direction so as to cause energization under the condition in which an insulating layer (30) is disposed in at least a portion between an inner wall (12) of the mold (10) and the sintered material (20) and the insulating layer (30) keeps having insulating properties. Here, the sintered body is a thermoelectric conversion substance.
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B22F 3/105 - Sintering only by using electric current, laser radiation or plasma
H01L 35/16 - Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
H01L 35/18 - Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth
H01L 35/22 - Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen, or nitrogen
59.
III-NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING III-NITRIDE SEMICONDUCTOR SUBSTRATE
Provided is a III-nitride semiconductor substrate (a free-standing substrate (30)) which is composed of III-nitride semiconductor crystals and has a thickness of 300 to 1000 μm inclusive, and of which each of exposed first and second main surfaces that are opposite sides of the substrate is a semipolar surface, wherein, when X ray is emitted onto each of the first and second main surfaces in a direction parallel to the m axis of the III-nitride semiconductor crystals and a half width value of an XRC (x-ray rocking curve) is measured, the difference in the half width values is 500 arcsec or less.
C23C 16/52 - Controlling or regulating the coating process
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
60.
METHOD FOR MANUFACTURING GROUP III-NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III-NITRIDE SEMICONDUCTOR SUBSTRATE, AND BULK CRYSTAL
Provided is a method for manufacturing a group III-nitride semiconductor substrate, the method comprising: an attachment step S10 for fixedly attaching a base substrate to a susceptor, wherein the base substrate includes a group III-nitride semiconductor layer having a semipolar plane as a main surface; a first growth step S11 for forming a first growth layer by growing a group III-nitride semiconductor on the main surface of the group III-nitride semiconductor layer through an HVPE process, while the base substrate is fixedly attached to the susceptor; a cooling step S12 for cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 for forming a second growth layer by growing the group III-nitride semiconductor on the first growth layer through an HVPE process, while the base substrate is attached to the susceptor.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
x. Here, L includes at least one element selected from rare earth elements. R includes two or more elements selected from the group consisting of alkali metal elements, alkali earth metal elements, Group 4 elements, and Group 13 elements. T includes at least one element selected from Fe and Co. M includes at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au. In addition, 0.50≤k≤1.00, 0.1≤r≤0.5, 3.0≤t−m≤5.0, 0≤m≤0.5, 10.0≤x≤11.5, and x/t<3.0 are satisfied.
According to the present invention, there is provided a group III nitride semiconductor substrate (independent substrate (30)) which is constituted by a group III nitride semiconductor crystal and in which exposed first and second main surfaces thereof in an obverse-reverse relationship are both semi-polar surfaces; wherein the first and second main surface each have an emission wavelength variation coefficient of 0.05% or less as calculated by irradiating the surfaces at room temperature with a helium-cadmium (He-Cd) laser having a wavelength of 325 nm and an output of 10 mW to 40 mW, and dividing the standard deviation of the emission wavelength in photoluminescence (PL) mapped per 1 mm2 by the mean emission wavelength. When devices are manufactured upon the independent substrate (30), inconsistencies in quality between the devices are suppressed.
Provided is a method for manufacturing a group III-nitride semiconductor substrate, the method comprising: a sapphire substrate preparation step S10 of preparing a sapphire substrate that has, as a principal surface, a {10-10} plane or a surface tilted a predetermined angle in a predetermined direction from the {10-10} plane; a heat treatment step S20 of heat treating the sapphire substrate while performing or not performing a nitriding treatment; a buffer layer forming step S30 of forming a buffer layer on the principal surface of the sapphire substrate after the heat treatment; and a growing step S40 of forming, on the buffer layer, a group III-nitride semiconductor layer having a growth surface oriented in a predetermined plane direction, wherein at least one among the plane direction of the principal surface of the sapphire substrate, whether or not to perform the nitriding treatment during the heat treatment, and the growth temperature in the buffer layer forming step is adjusted so that the growth surface of the group III-nitride semiconductor layer is oriented in the predetermined plane direction.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/02 - Pretreatment of the material to be coated
Provided is a production method for a group III nitride semiconductor substrate, the method comprising: a substrate preparation step S10 for preparing a sapphire substrate; a heat treatment step S20 for applying a heat treatment to the sapphire substrate; a pre-flowing step S30 for supplying a metal-containing gas onto the sapphire substrate; a buffer layer formation step S40 for forming a buffer layer on the sapphire substrate under growth conditions of growth temperature at 800-950°C and pressure at 30-200 torr; and a growth step S50 for growing a group III nitride semiconductor layer on the buffer layer under growth conditions of growth temperature at 800-1025°C, pressure at 30-200 torr, and growth speed of at least 10 μm/h.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Provided is a group III nitride semiconductor substrate production method, comprising: a preparatory step S1 for preparing a group III nitride semiconductor substrate which has a sapphire substrate having a semi-polar surface as a principal surface and a group III nitride semiconductor layer disposed on said principal surface and in which the <0002> direction of the sapphire substrate and the <10-10> direction of the group III nitride semiconductor layer do not intersect each other at a right angle, in a planar view in a direction perpendicular to the principal surface; and a growth step S20 for epitaxially growing a group III nitride semiconductor on the group III nitride semiconductor layer.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
66.
UNDERSEA MINING BASE, MINING BASE MONITORING DEVICE, AND CHIMNEY AVOIDANCE METHOD FOR SEABED DEPOSIT
Provided is an undersea mining base that is capable of coping with slopes and undulations of a seabed deposit. This undersea mining base (20) is provided with a seabed mineral excavation device (30) that forms a pit in a seabed deposit (OD), and a platform (21) that has the seabed mineral excavation device (30) mounted thereon and that is capable of autonomous travel in at least one among an X direction and a Y direction.
E21B 15/02 - Supports for the drilling machine, e.g. derricks or masts specially adapted for underwater drilling
E21B 43/01 - Methods or apparatus for obtaining oil, gas, water, soluble or meltable materials or a slurry of minerals from wells specially adapted for obtaining from underwater installations
E21C 50/00 - Obtaining minerals from underwater, not otherwise provided for
67.
Device and method for evaluating operating conditions of briquetting machine, briquetting machine, method for manufacturing briquette, control device of briquetting machine, control method of briquetting machine, and program
FURUKAWA INDUSTRIAL MACHINERY SYSTEMS CO., LTD. (Japan)
FURUKAWA CO., LTD. (Japan)
Inventor
Tsukada, Koji
Kuronuma, Yu
Abstract
An evaluation device (20) evaluates the operating conditions of a briquetting machine (10). The evaluation device (20) includes an evaluation information acquisition unit (220) and an evaluation data generation unit (230). The evaluation information acquisition unit (220) acquires a plurality of pieces of evaluation information indicating the evaluation results of a plurality of briquettes manufactured under the same manufacturing conditions by the briquetting machine (10). The evaluation data generation unit (230) generates evaluation data that is data obtained by comparing a plurality of pieces of evaluation information with each other.
B30B 11/00 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses
B01J 2/22 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by pressing in moulds or between rollers
B30B 11/16 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses using pocketed rollers, e.g. two co-operating pocketed rollers
B30B 15/00 - Details of, or accessories for, pressesAuxiliary measures in connection with pressing
This method for producing a thermoelectric conversion material comprises a sintering step. In the sintering step, an insulating layer (30) is arranged at least partially between a sintering material (20) and an inner wall (12) of a conductive mold (10), and a sintered body of the sintering material (20) is obtained by applying a voltage to the mold (10) in a first direction, thereby applying a current thereto, under such conditions where the insulating layer (30) maintains the insulating properties. In this connection, the sintered body is a thermoelectric conversion substance.
Provided is a thermoelectric conversion material including a plurality of kinds of phases including a first phase and a second phase which have elemental compositions different from each other. The first phase and the second phase have a skutterudite structure.
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
70.
EVALUATION DEVICE FOR GRANULATOR OPERATING CONDITION, AND EVALUATION METHOD
FURUKAWA INDUSTRIAL MACHINERY SYSTEMS CO.,LTD. (Japan)
FURUKAWA CO., LTD. (Japan)
Inventor
Tsukada Koji
Kuronuma Yu
Abstract
An evaluation device (20) evaluates the operating condition of a granulator (10). The evaluation device (20) is provided with an evaluation information acquisition unit (220) and an evaluation data generation unit (230). The evaluation information acquisition unit (220) acquires multiple pieces of evaluation information indicating the evaluation results for multiple granulated products that were produced by the granulator (10) under the same operating condition. The evaluation data generation unit (230) generates evaluation data in which the pieces of evaluation information are compared.
B01J 2/22 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by pressing in moulds or between rollers
B01J 2/00 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic
G01M 99/00 - Subject matter not provided for in other groups of this subclass
71.
THERMOELECTRIC CONVERSION MATERIAL, PROCESS FOR PRODUCING THERMOELECTRIC CONVERSION MATERIAL, AND THERMOELECTRIC CONVERSION MODULE
The thermoelectric conversion material (10) according to an embodiment comprises a plurality of matrix particles (22) and nanoparticles (30). The matrix particles (22) have a crystalline structure. The nanoparticles (30) comprise an oxide and are present at the boundaries between the matrix particles (22). The nanoparticles (30) contain at least one of the elements constituting the crystalline structure. When the thermoelectric conversion material (10) is examined with a scanning electron microscope to acquire an image of a cross-section thereof having an area of 6 μm × 4 μm, then the group of particles in the image which are composed of matrix particles (22) and nanoparticles (30) have an average particle diameter (d), which is an average of the equivalent circular diameters, of 100-1,000 nm.
H01L 35/22 - Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen, or nitrogen
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 35/14 - Selection of the material for the legs of the junction using inorganic compositions
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
72.
METHOD FOR PRODUCING CORE-SHELL TYPE METAL FINE PARTICLES, CORE-SHELL TYPE METAL FINE PARTICLES, AND METHOD FOR PRODUCING SUBSTRATE AND ELECTRICALLY CONDUCTIVE INK
The present invention is a method for producing core-shell type metal fine particles formed from a copper-containing core component and a silver-containing shell component, wherein the method includes a step of preparing copper particles and silver particles, a step of simultaneously dispersing the copper particles and silver particles in an organic solvent so as to deposit a plurality of the silver particles on the surface of a copper particle, and a step of heating the copper particle on which the silver particles are deposited so as to fuse the plurality of the silver particles, which are deposited on the surface of the copper particle, to each other and form the silver-containing shell component on the surface of the copper particle.
B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
A vapor phase growth apparatus (1) is provided with a film-forming chamber (4), a first supply unit (2), a second supply unit (3), a transfer means (5), and a first gas release means (6). At least one substrate (S) is disposed in the film-forming chamber (4), and a III-V compound semiconductor film is formed on the substrate (S). The transfer means (5) is provided with a susceptor (51) that rotates about a rotation axis (L). Furthermore, the vapor phase growth apparatus (1) is provided with a second gas release means (7) that releases, independently from the first gas release means (6), gas from the film-forming chamber (4). The second gas release means (7) releases a remaining gas which is generated on the rotation axis (L) of the transfer means (5), said remaining gas being close to an upper surface of the susceptor (51).
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A thermal stress of electrode members (121 to 123) due to an operation temperature may be relaxed by thermal stress relaxation layers (141 to 144), and thus peeling of the electrode members (121 to 123) due to thermal stress at the operation temperature may be prevented in a satisfactory manner. Furthermore, diffusion of a constituent component of the thermoelectric conversion members (111 and 112) due to the operation temperature and the like may be prevented by diffusion prevention layers (151 to 154), and thus durability and stability of the thermoelectric conversion module (100) may be improved.
This thermoelectric conversion module is provided with: a p-type thermoelectric conversion member (111) and an n-type thermoelectric conversion member (112), each of which contains Sb; and an electrode member (120) which is bonded to the p-type thermoelectric conversion member (111) and the n-type thermoelectric conversion member (112) and is configured from an alloy of Cu and a metal material (M1) having a lower thermal expansion coefficient than Cu, while containing two or more kinds of crystal phases composed of Cu and M1. Consequently, this thermoelectric conversion module is able to have improved durability, while achieving various characteristics required for thermoelectric conversion modules.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
C22C 5/08 - Alloys based on silver with copper as the next major constituent
G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
A vapor deposition apparatus (1) includes a deposition chamber (4) for carrying out a deposition of a film on a substrate, source gas tubes (21) and (31) for supplying a source gas, a transfer unit (5) for transferring the substrate in the interior of the deposition chamber (4) so that the substrate is alternately situated in a state where the substrate is located in a deposition region that faces the gas discharge port for supplying the source gas and in a state where the substrate is located in other region except the deposition region, while the source gas is supplied from a gas discharge port of any one of the source gas tubes (21) and (31), and a supply tube (7) for supplying a gas containing group-V element to the substrate S located in the other region.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Disclosed is a radiation detector (1), which has a three-dimensional laminated scintillator (12) wherein: a plurality of scintillator blocks (13) are three dimensionally arranged in matrix so as to form a columnar body; on the boundary surfaces that extend in the direction perpendicular to the height direction (H) of the columnar body among the boundary surfaces between the scintillator blocks (13), an interlayer (15) is present, said interlayer having characteristics of having a refractive index different from that of the scintillator blocks (13) and/or absorbing or scattering a part of light emitted from the scintillator; and at least on some of the boundary surfaces that extend in the direction parallel to the height direction of the columnar body, a light blocking layer (14) is present, said light blocking layer blocking transmission of light emitted from the scintillator.
In the present invention, since heat stress of electrode members (121-123) due to operating temperature and the like can be relaxed by means of heat stress relaxing layers (141-144), peeling of the electrode members (121-123) due to the heat stress due to the operating temperature and the like can be excellently eliminated. Furthermore, since diffusion of constituents of the thermoelectric conversion members (111, 112) due to the operating temperature and the like can be eliminated by means of diffusion preventing layers (151-154), durability and stability of a thermoelectric conversion module (100) can be improved.
A semiconductor manufacturing apparatus component (101) to which nitride semiconductor that can be expressed as a general formula AlxInyGa1-x-yN (where x and y satisfy 0 ≤ x < 1, 0 ≤ y < 1, and 0 ≤ x+y < 1) is adhered is disposed in a washing apparatus (100) provided with a gas introducing pipe (104) and a gas discharging pipe (105). After making the inside of the apparatus a decompressed state, halogen-containing gas is introduced from the gas introducing pipe (104), and the pressure in the apparatus is made to be not less than 10 kPa and not more than 90 kPa. After that, the halogen-containing gas is kept inside the apparatus to remove the nitride semiconductor adhering to the semiconductor manufacturing apparatus component (101).
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B08B 5/00 - Cleaning by methods involving the use of air flow or gas flow
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
This garnet type crystal for a scintillator is represented by general formula (1): Gd3-x-yCexREyAl5-zGazO12 (1) (in the formula (1), 0.0001≤x≤0.15, 0≤y≤0.1, and 2
This processing device (100) is provided with: a first wire section (112) and a second wire section (122) that are disposed in a manner so that a member (GB) to be processed bridges across in a plan view, and that support the member (GB) to be processed from beneath; a driving unit (vertical mechanism) (113) that moves the first wire section (112) in the vertical direction relative to the second wire section (122); and a displacement mechanism (displacement mechanism sections (132), (134)) that moves the first wire section (112) in the horizontal direction relative to the second wire section (122).
B65G 49/06 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
F26B 5/04 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
An electric signal generated by a photoelectric conversion element (104) is inputted into a comparator (120). The comparator (120) determines whether or not an electric signal outputted by an amplifier (110) is greater than or equal to a reference voltage and outputs a high signal when the electric signal is greater than or equal to the reference voltage. A reference voltage modification unit (130) raises the reference voltage once the comparator (120) determines that the electric signal is greater than or equal to the reference voltage and after a predetermined amount of time has elapsed. On the basis of the pulse width, which is the period from when the electric signal equals or rises above the reference voltage to when the electric signal equals or drops below the reference voltage, a signal processing device corrects the rising timing which is when the electric signal became greater than the reference voltage, thereby calculating the timing with which a signal light began to enter a photoelectric conversion unit (100).
n (0≤r≤1, 3≤t−m≤5, 0≤m≤0.5, 10≤x≤15, 0≤n≤2), where R represents three or more elements selected from the group consisting of rare earth elements, alkali metal elements, alkaline-earth metal elements, group 4 elements, and group 13 elements, T represents at least one element selected from Fe and Co, M represents at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au, X represents at least one element selected from the group consisting of P, As, Sb, and Bi, and N represents at least one element selected from Se and Te.
A neutron measurement device (1A) is configured by a neutron detection unit (10), a light detection unit (20) which detects scintillation light emitted from the neutron detection unit (10), a light guiding optical system (15) which guides the scintillation light from the neutron detection unit (10) to the light detection unit (20), and a blocking member (30) which is located between the neutron detection unit (10) and the light detection unit (20) and blocks radiation traveling to the light detection unit (20). As a scintillator for neutron detection which constitutes the neutron detection unit (10), a scintillator which is configured from a lithium glass material produced by adding PrF3 to a glass material 20Al(PO3)3-80LiF is used. Thus, the scintillator for neutron detection and the neutron measurement device which are capable of suitable neutron measurement including the measurement of a scattered neutron from implosion plasma are implemented.
Disclosed is a thermoelectric conversion module having high thermoelectric performance over a wide temperature range. Specifically disclosed is a thermoelectric conversion material having a structure represented by the following general formula: RrTt-mMmXx-nNn (wherein 0 < r ≤ 1, 3 ≤ t - m ≤ 5, 0 ≤ m ≤ 0.5, 10 ≤ x ≤ 15 and 0 ≤ n ≤ 2). In the general formula, R represents three or more elements selected from the group consisting of rare earth elements, alkali metal elements, alkaline earth metal elements, group 4 elements and group 13 elements; T represents at least one element selected from the group consisting of Fe and Co; M represents at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag and Au; X represents at least one element selected from the group consisting of P, As, Sb and Bi; and N represents at least one element selected from the group consisting of Se and Te.
A nondestructive carrier concentration measuring device (100) includes: a storage unit (101) which stores a correlation between a reflectance of an inorganic compound semiconductor against a terahertz light and a carrier concentration; a light radiation unit (103) which applies the terahertz light (105) to the inorganic compound semiconductor as a sample; a detection unit (109) which detects a reflected light (108) of the inorganic compound semiconductor against the applied terahertz light (105); a reflectance calculation unit (111) which compares the applied terahertz light (105) to the reflected light (108) and calculates an actually measured value of the reflectance of the inorganic compound semiconductor; and a read unit (113) which references the stored correlation and reads the carrier concentration of the sample corresponding to the actually measured value of the reflectance.
G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
H01L 21/66 - Testing or measuring during manufacture or treatment
88.
Semiconductor substrate fabrication by etching of a peeling layer
A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.
The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.
G01T 1/29 - Measurement performed on radiation beams, e.g. position or section of the beamMeasurement of spatial distribution of radiation
G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
12 - Land, air and water vehicles; parts of land vehicles
37 - Construction and mining; installation and repair services
Goods & Services
Mineworking machines and instruments; cargo handling machines and apparatus; civil engineering machines and apparatus; pneumatic or hydraulic machines and instruments; crushing machines and instruments; multistory parking system and instruments; pumps and instruments; environmental protection equipment and instrument; stone working machines; lawnmowers; parts and accessories for all the aforesaid goods. Carriers for vehicles and implements; parts and accessories thereof. Repair and maintenance of mineworking machines and instruments; cargo handling machines and apparatus; civil engineering machines and apparatus; pneumatic or hydraulic machines and instruments; crushing machines and instruments; multistory parking system and instruments; pumps and instruments; environmental protection equipment and instruments; stone working machines; lawnmowers; parts and accessories for all the aforesaid goods; and of carriers for vehicles and implements; and of parts and accessories thereof.
37 - Construction and mining; installation and repair services
Goods & Services
Mineworking machines and instruments; civil engineering machines and apparatus; pneumatic or hydraulic machines and instruments; crushing machines and instruments; pumps and instruments; environmental protection equipment and instruments; stone working machines; parts and accessories for all the aforesaid goods. Repair and maintenance of mineworking machines and instruments; civil engineering machines and apparatus; pneumatic or hydraulic machines and instruments; crushing machines and instruments; pumps and instruments; environmental protection equipment and instruments; stone working machines; parts and accessories for all the aforesaid goods.
12 - Land, air and water vehicles; parts of land vehicles
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Cranes and other cargo handling machinery and implements, parts and accessories thereof. Undercarriages for vehicles and implements, parts and accessories thereof.
06 - Common metals and ores; objects made of metal
07 - Machines and machine tools
09 - Scientific and electric apparatus and instruments
12 - Land, air and water vehicles; parts of land vehicles
20 - Furniture and decorative products
Goods & Services
(1) Cranes, booms, outriggers, winch drums and hooks, hydraulic control systems for directing the operation of cranes and outriggers, remote control units for cranes and parts and accessories for the foregoing.
