A process for preparing a product including a monohydrogentrihalosilane is disclosed. The process includes the steps of: 1) initially charging a reactor with a contact mass including both fresh silicon and recycled contact mass, where the recycled contact mass is obtained from during or after a production phase of an inorganic Direct Process reaction for production of a monohydrogentrihalosilane; and thereafter 2) feeding to the reactor a hydrogen halide and additional fresh silicon, thereby forming the product.
C03B 29/06 - Reheating glass products for softening or fusing their surfacesFire-polishingFusing of margins in a continuous way with horizontal displacement of the products
A carrier body is used to grow polycrystalline silicon within a reactor. The carrier body is coupled to a socket, which is disposed on an electrode within the reactor. The carrier body includes a body portion comprising silicon and extending along a body axis between a first end and a second end. The body portion terminates at a terminal surface at the first end. The carrier body also includes a transitional element having an interface surface coupled to and in contact with the terminal surface of the body portion. The transitional element extends from the interface surface to a socket end configured to connect with the socket. The terminal element is configured to transfer an electrical current from the electrode through the interface surface of the transitional element and into the terminal surface of the body portion.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C30B 28/12 - Production of homogeneous polycrystalline material with defined structure directly from the gas state
A method determines a concentration of metal impurities contaminating a silicon product. The method comprises obtaining a test sample of the silicon product with the metal impurities disposed thereon. The test sample is placed within a first vessel. A first acid solution is added to the first vessel containing the test sample. The test sample is submerged into the first acid solution to produce a mixed solution comprising the first acid solution, the metal impurities, and digested silicon. The undigested silicon is separated from the mixed solution. The mixed solution is analyzed to determine the concentration of metal impurities contaminating the silicon product.
A heat exchanger transfers heat between first and second material streams. The heat exchanger includes a body portion including vent channels configured to pass the first material stream through the body portion. The body portion further includes feed channels configured to pass the second material stream through the body portion. The feed channels are spaced from and in thermal communication with the vent channels such that at least one of the first and second material streams transfer heat with another one of the first and second material streams. Each of the feed channels has an inlet having a crosssectional area with the cross-sectional area of the inlet of at least one of the feed channels different than the cross-sectional area of the inlet of another one of the feed channels for normalizing a flow rate of the second material stream through the feed channels.
F28F 13/08 - Arrangements for modifying heat transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media by varying the cross-section of the flow channels
A gasket seals a chamber of a manufacturing apparatus. The manufacturing apparatus deposits a material on a carrier body. The manufacturing apparatus includes a housing having a jar, which defines the chamber, and a base plate for coupling with the jar. An electrode is disposed through the housing with the electrode at least partially disposed within the chamber. An inlet is defined by the housing for introducing a deposition composition, which comprises the material or a precursor thereof, into the chamber. The gasket is disposable between the base plate and either the jar or the electrode for preventing the deposition composition from escaping the chamber. The gasket comprises a body portion with a hollow interior.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
An induction heating apparatus includes a susceptor defining a reaction chamber. A housing is spaced from the susceptor opposite the reaction chamber and defines a port. A void space is defined between the housing and the susceptor. An induction coil extends through the port and is disposed within the void space for conducting an electric current to heat the susceptor to heat the reaction chamber. A flange comprises a metal material and is coupled to the housing at the port for sealing the port with the induction coil extending through the flange. An isolator is disposed between the flange and the housing to prevent the electric current from passing into the housing.
A gasket seals a chamber of a manufacturing apparatus, which deposits material on a carrier body. The manufacturing apparatus includes a housing defining the chamber. The housing also includes a jar and a base plate for coupling with the jar. The housing defines an inlet for introducing a deposition composition, which comprises the material or a precursor thereof, into the chamber. The gasket comprises a body portion defining an upper groove for positioning adjacent the jar. The body portion also defines a lower groove opposite said upper groove for positioning adjacent the base plate. A first sealing element is disposed within said upper groove for sealing against the jar. A second sealing element is disposed within said lower groove for sealing against the base plate. The first and second sealing elements seal between the jar and the base plate to prevent the deposition composition from escaping the chamber.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
B01J 3/03 - Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
F16J 15/02 - Sealings between relatively-stationary surfaces
8.
MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL AND A GASKET FOR USE THEREIN
A gasket seals a chamber of a manufacturing apparatus, which is used to deposit a material on a carrier body. The manufacturing apparatus including a housing defining a chamber. An electrode is disposed through the housing. The housing defines an inlet for introducing a deposition composition, which comprises the material or a precursor thereof, into the chamber. The gasket comprises a body portion defining an upper groove for positioning adjacent the electrode. The body portion of the gasket also defines a lower groove opposite the upper groove for positioning adjacent the housing. A first sealing element is disposed within the upper groove for sealing against the electrode. A second sealing element is disposed within the lower groove for sealing against the housing. Sealing between the electrode and the housing prevents the deposition composition from escaping the chamber.
F16J 15/12 - Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing with metal reinforcement or covering
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
B01J 3/03 - Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
Methods of forming and analyzing doped monocrystalline silicon each comprise the steps of providing: a vessel, particulate silicon, a dopant, and a float-zone apparatus. The vessel for each method comprises silicon and defines a cavity. The methods each further comprise the steps of combining the particulate silicon and the dopant to form treated particulate silicon, and disposing the treated particulate silicon into the cavity of the vessel. The methods yet further comprise the step of float-zone processing the vessel and the treated particulate silicon into doped monocrystalline silicon with the float-zone apparatus. The analytical method further comprises the step of providing an instrument. The analytical method yet further comprises the steps of removing a piece from the doped monocrystalline silicon, and determining the concentration of the dopant in the piece with the instrument. The methods are useful for forming and analyzing monocrystalline silicon having various types and/or concentrations of dopant(s).
A fluidized bed reactor includes a gas distributor, a tapered section above the gas distributor, and an expanded head above the tapered section. The gas distributor defines a plurality of inlets surrounding a product withdrawal tube, which extends away from the fluidized bed reactor. The fluidized bed reactor is useful in a process for fluidizing relatively large particles, such as Geldart Group B particles and/or Geldart Group D particles, where said particles are in a bubbling fluidized bed residing, in whole or in part, in the tapered section. The fluidized bed reactor and process may be used for manufacturing polycrystalline silicon.
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
A manufacturing apparatus (10) deposits material on a carrier body (14). The manufacturing apparatus includes a housing (16) defining a chamber. The housing defines an inlet (32) for introducing a deposition composition, which comprises the material or a precursor thereof, into the chamber. The housing also defines an outlet (34) through the housing for exhausting the deposition composition from the chamber. An electrode (46) is disposed through the housing with the electrode at least partially disposed within the chamber. A socket (52) has an exterior surface with a surface roughness RA value of less than or equal to 100 microns is connected to the electrode within the chamber for receiving the carrier body. A polishing the exterior surface of the socket is disposed on the exterior surface of the socket for promoting release of the material deposited on the carrier body from the socket to harvest the material from the socket.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
12.
MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL AND A SOCKET FOR USE THEREIN
A manufacturing apparatus deposits material on a carrier body. The manufacturing apparatus includes a housing defining a chamber. The housing defines an inlet for introducing a deposition composition, which comprises the material or a precursor thereof, into the chamber. The housing also defines an outlet through the housing for exhausting the deposition composition from the chamber. An electrode is disposed through the housing with the electrode at least partially disposed within the chamber. A socket has an exterior surface and is connected to the electrode within the chamber for receiving the carrier body. A release coating is disposed on the exterior surface of the socket for promoting separation of the socket from the carrier body, and the material deposited thereon, to harvest the carrier body.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
13.
METHOD OF CONDUCTING AN EQUILIBRIUM REACTION AND SELECTIVELY SEPARATING REACTIVE SPECIES OF THE EQUILIBRIUM REACTION
A method of conducting an equilibrium reaction and selectively separating reactive species of the equilibrium reaction includes introducing a first composition comprising a metal halide into an apparatus that is sealed from the ambient environment. A source of an elemental semiconductor that is reactive with the metal halide is introduced into the apparatus. The metal halide and elemental semiconductor are reacted, through an equilibrium reaction, in the apparatus to produce a gaseous stream that comprises a halide of the semiconductor, unreacted metal halide, and, optionally, elemental metal. Unreacted metal halide and, when present, elemental metal are condensed from the gaseous stream with the halide of the semiconductor remaining in the gaseous stream. At least a portion of the gaseous stream including the halide of the semiconductor is isolated from the condensed metal halide and elemental metal after condensing the metal halide and, when present, elemental metal from the gaseous stream.
C01B 33/033 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
C01B 33/039 - Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
14.
METHOD OF RECOVERING ELEMENTAL METAL FROM POLYCRYSTALLINE SEMICONDUCTOR PRODUCTION
A method includes the step of introducing hydrogen and a silane-containing feed gas that comprises trichlorosilane into one or more decomposition reactors that contain a polycrystalline silicon seed substrate. The trichlorosilane and hydrogen are reacted to form polycrystalline silicon in the decomposition reactor. A gaseous stream that comprises silicon tetrachloride is exhausted from the one or more decomposition reactors. The gaseous stream and a source of elemental metal that is reactive with the silicon tetrachloride is fed into a recovery reactor. The silicon tetrachloride and the elemental metal are reacted to produce polycrystalline silicon and a first composition that comprises metal chloride. Elemental metal is recovered from the metal chloride in the first composition through at least one of 1) subjecting the first composition comprising the metal chloride to hydrogenation to produce elemental metal and hydrogen chloride, or 2) reacting the metal chloride in the first composition and elemental silicon.
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C01B 33/033 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
15.
APPARATUS FOR FACILITATING AN EQUILIBRIUM REACTION AND SELECTIVELY SEPARATING REACTIVE SPECIES
An apparatus is provided that includes a heating zone, an overhead temperature modulation zone in fluid communication with the heating zone, and an overhead cooling zone in fluid communication with the overhead temperature modulation zone. The heating zone includes a solid reactant support and a reactant gas input, and also includes a heater. The overhead temperature modulation zone includes a temperature regulator for modifying the temperature of the overhead temperature modulation zone. The overhead temperature modulation zone also includes an overhead gas outlet and provides a reflux flow path for condensate to return to the heating zone. The overhead cooling zone has a chiller for cooling the temperature of the overhead cooling zone. The overhead cooling zone provides a barrier to separate condensate formed therein from the overhead temperature modulation zone. The apparatus further includes an apparatus wall that defines an interior chamber of the apparatus between the zones.
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
C01B 33/033 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
A method of forming a heterogeneous protective layer on a surface of a component in a reactor is useful for repair and/or protection. The reactor may be used for production of polycrystalline silicon or a reactant thereof. The heterogeneous protective layer comprises silicon, and may comprise silicon carbide (SiC) and/or silicon nitride (Si3N4). The method comprises providing a polymeric composition for forming the heterogeneous protective layer. The polymeric composition may comprise a polycarbosilane and/or a polysilazane. The method further comprises providing the component. The surface of the component comprises carbon, such as graphite, carbon fiber reinforced carbon, or a combination thereof. The method further comprises applying the polymeric composition on the surface to form a pre-cured coating layer. The method further comprises heating the pre-cured coating layer to form the heterogeneous protective layer. The surface of the component is present within the reactor during heating of the pre-cured coating layer.
B05D 7/22 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to internal surfaces, e.g. of tubes
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
B05D 7/00 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
B05D 3/02 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
B05D 3/04 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
17.
ELECTRODE COMPOSITION COMPRISING A SILICON POWDER AND METHOD OF CONTROLLING THE CRYSTALLINITY OF A SILICON POWDER
An electrode composition comprises a silicon powder comprising non- crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt.%. An electrode for an electrochemical cell comprises an electrochemically active material comprising non-crystalline silicon and crystalline silicon, where the non-crystalline silicon and the crystalline silicon are present prior to cycling of the electrode. A method of controlling the crystallinity of a silicon powder includes heating a reactor to a temperature of no more than 650°C and flowing a feed gas comprising silane and a carrier gas into the reactor while maintaining an internal reactor pressure of about 2 atm or less. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.
A gasket is used in a manufacturing apparatus, which deposits a material on a carrier body. A reaction chamber is defined by a housing and a base plate of the manufacturing apparatus. The gasket is disposed between the housing and the base plate for preventing a deposition composition, which comprises the material to be deposited or a precursor thereof, from escaping the reaction chamber. The gasket comprised a flexible graphite material for preventing the gasket from contaminating the material within said reaction chamber.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
F16J 15/10 - Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing
A dome valve selectively dispenses a silicon product from a chamber of a vessel. The dome valve comprises a valve body defining a pass-through channel in communication with the chamber of the vessel to allow the silicon product to exit the vessel. The dome valve also comprising a valve seat defining an opening through which the silicon product enters the pass-through channel. The dome valve further comprising a domed body having a semi-hemispherical configuration. The domed body has a sealing surface. The domed body is rotatable between a closed position and an open position for allowing the selective dispensing of the silicon product from the vessel.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
Provided are photoluminescence spectroscopy systems and methods for identifying and quantifying impurities in a semiconductor sample. In some embodiments, the systems and methods comprise a defocused collimated laser beam illuminating a first sample surface, and collection by a collection lens of photoluminescence from a sample edge at the intersection of the first surface with a substantially orthogonal second surface, wherein the first sample surface is oriented from about 0° to 90° with respect to a position parallel to the collection lens.
A manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus are provided. The manufacturing apparatus includes a housing that defines a chamber. The housing also defines an inlet for introducing a gas into the chamber and an outlet for exhausting the gas from the chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber. The electrode has an exterior surface. A first exterior coating having an electrical conductivity of at least 7x106 Siemens/meter at room temperature is disposed on the exterior surface of the electrode. A second exterior coating different from the first exterior coating is disposed on the first exterior coating. A power supply device is coupled to the electrode.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
22.
MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL AND AN ELECTRODE FOR USE THEREIN
A manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus are provided. The manufacturing apparatus includes a housing that defines a chamber. The housing also defines an inlet for introducing a gas into the chamber and an outlet for exhausting the gas from the chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber. The electrode has an exterior surface. The exterior surface has a contact region that is adapted to contact a socket. A contact region coating is disposed on the contact region of the electrode for maintaining electrical conductivity between the electrode and the socket. The contact region coating has an electrical conductivity of at least 7x106 Siemens/meter at room temperature and a greater wear resistance than nickel as measured in mm3/N*m.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
A manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus are provided. The manufacturing apparatus includes a housing that defines a chamber. The housing also defines an inlet for introducing a gas into the chamber and an outlet for exhausting the gas from the chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber. The electrode includes a shaft having a first end and a second end, and a head disposed on one of the ends of the shaft. The head of the electrode has an exterior surface having a contact. An exterior coating is disposed on the exterior surface of the electrode, outside of the contact region. The exterior coating has a greater wear resistance than nickel as measured in mm3/N*m.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
24.
A METHOD OF INHIBITING FORMATION OF DEPOSITS IN A MANUFACTURING SYSTEM
A method inhibits formation of deposits on a cooling surface of an electrode. The electrode is used in a manufacturing system that deposits a material on a carrier body. The cooling surface comprises copper. The system includes a reactor defining a chamber. The electrode is at least partially disposed within the chamber and supports the carrier body. A circulation system, in fluid communication with the electrode, transports a coolant composition to and from the cooling surface. The coolant composition comprises a coolant and dissolved copper from the cooling surface. A filtration system is in fluid communication with the circulation system. The method heats the electrode. The cooling surface of the electrode is contacted with the coolant composition. The material is deposited on the carrier body, and the coolant composition is filtered with the filtration system to remove at least a portion of the dissolved copper therefrom.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
F25B 43/00 - Arrangements for separating or purifying gases or liquidsArrangements for vaporising the residuum of liquid refrigerant, e.g. by heat
F25B 47/00 - Arrangements for preventing or removing deposits or corrosion, not provided for in another subclass
A method for quantitatively monitoring gas phase materials in a chemical process is provided and includes, providing a gaseous feed stream containing one or more reactant gases of interest; exposing the gaseous feed stream to coherent radiation from a Raman spectroscopic device; acquiring a Raman spectroscopic signal from each of the gaseous components in the feed stream; analyzing the spectroscopic signal to determine the presence and concentration of each of the gaseous components; and displaying the results of the analysis. In one embodiment, the method is useful for quantitatively monitoring gas phase materials in a process for making high purity silicon.
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
A process for reducing waste and increasing yield of chlorosilane monomers is performed by cracking polychlorosiloxane and polychlorosilane by-products generated during production of trichlorosilane useful for the manufacture of polycrystalline silicon.
A method of analyzing a composition and a method of processing the composition are provided. The composition contains impurities and has a boiling point less than ambient temperature and/or a vapor pressure greater than water at 14.5 °C. The method of analyzing the composition comprises a step of providing the composition in a liquid state within a vessel. The composition is chilled in the liquid state within the vessel at a temperature below the boiling point of the composition, thereby maintaining the composition in the liquid state. The chilled composition in the vessel is converted to produce at least one of a vaporized composition and a nebulized composition, which converted composition is introduced into an analytical device. A measurement of content of the impurities of the composition is obtained from the analytical device. The method of processing the composition includes the same steps as the method of analyzing the composition, and but further requires that at least a portion of the composition remains in the supply tank.
Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and/or etching gas fed to the fluidized bed reactor.
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
F23C 10/20 - Inlets for fluidisation air, e.g. gridsBottoms
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
29.
METHOD OF DETERMINING AN AMOUNT OF IMPURITIES THAT A CONTAMINATING MATERIAL CONTRIBUTES TO HIGH PURITY SILICON AND FURNACE FOR TREATING HIGH PURITY SILICON
A method of determining an amount of impurities that a contaminating material contributes to high purity silicon comprises the step of partially encasing a sample of high purity silicon in the contaminating material. The sample encased in the contaminating material is heated within a furnace. A change in impurity content of the high purity silicon is determined after the step of heating, compared to an impurity content of the high purity silicon prior to the step of heating. A furnace for heat treating high purity silicon comprises a housing that defines a heating chamber. The housing is at least partially formed from low contaminant material that contributes less than 400 parts per trillion of impurities to the high purity silicon during heating at annealing temperatures for a sufficient period time to anneal the high purity silicon, and the furnace contributes an average of less than 400 parts per trillion of impurities to the high purity silicon under the same heating conditions.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing for receiving the socket. The electrode includes an interior surface that defines a channel. The electrode heats the carrier body to a necessary deposition temperature by direct passage of electrical current to the carrier body. A coolant is in fluid communication with the channel of the electrode for reducing the temperature of the electrode. A channel coating is disposed in the interior surface of the electrode for preventing loss of heat transfer between the coolant and the interior surface.
F28F 13/18 - Arrangements for modifying heat transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflectingArrangements for modifying heat transfer, e.g. increasing, decreasing by surface treatment, e.g. polishing
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
31.
MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL ON AN ELECTRODE FOR USE THEREIN
The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. A contact region coating is disposed on the contact region of the exterior surface of the electrode. The contact region coating has an electrical conductivity of at least 9x106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
32.
MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL AND AN ELECTRODE FOR USE THEREIN
A manufacturing apparatus and an electrode for use with the manufacturing apparatus are provided for deposition of a material on a carrier body. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. An exterior coating is disposed on the exterior surface of the electrode, outside of the contact region. The exterior coating has an electrical conductivity of at least 9x106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
33.
SILICON PRODUCTION WITH A FLUIDIZED BED REACTOR INTEGRATED INTO A SIEMENS-TYPE PROCESS
A fluidized bed reactor and a Siemens reactor are used to produce polycrystalline silicon. The process includes feeding the vent gas from the Siemens reactor as a feed gas to the fluidized bed reactor.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
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