An integrated MEMS waveguide modulator, including: a static, non-suspended waveguide to guide light traveling through the waveguide; and a dielectric slab movable into and out of an evanescent field surrounding the waveguide using an actuation mechanism, wherein the dielectric slab is movable between a first position that is farthest away possible for the slab from the waveguide and a second position that is closest possible for the slab from the waveguide, wherein dispersion characteristic of the light is controlled by moving the dielectric slab from an unactuated mode that is at the first position to an actuated mode that is at the second position, and wherein the dielectric slab is layered to include non-uniform refractive index profile.
An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Electronic devices comprising pixels for sensing, methods for operating the electronic devices, and methods for manufacturing the electronic devices are disclosed. In some embodiments, the electronic devices comprise hinges for supporting the pixels. In some embodiments, the electronic devices are configured to provide a bias voltage to the pixels.
Vacuum encapsulation on a wafer including: preparing a first substrate by placing a first set of seal ring metals to define a first set of bondlines and solder platforms, the first substrate providing a plurality of device areas; preparing a second substrate by placing a second set of seal ring metals to define a second set of bondlines, the second substrate providing a plurality of covers for the plurality of device areas, wherein each cover encapsulates vacuum; placing solder outside of the first and second set of bondlines; and heating to bond the first and second substrates.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 3/00 - Assembling of devices or systems from individually processed components
H01L 23/488 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions
Membrane fabrication including: depositing a bottom Molybdenum (Mo) layer; depositing a polyimide (PI) layer and defining a first release hole; curing the PI layer; depositing a top Mo layer; and defining and etching a second release hole within the first release hole.
G01K 7/22 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
H01C 7/06 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
Noise reduction and manufacturing methods for sensors of an electronic device are disclosed. In some embodiments, the device comprises a lid comprising an opening covered by a window cap. In some embodiments, the device comprises pressure sensors. In some embodiments, a method comprises induction heating for bonding the device. In some embodiments, a method comprises averaging readout values of successive frames from the sensors. In some embodiments, a method comprises reading out the sensors at a first frequency during a first time period and at a second frequency during a second time period. In some embodiments, residue filaments are attached to the sensors. In some embodiments, the device is thermally isolated from a housing of the device. In some embodiments, the device comprises sensors for measuring temperature. In some embodiments, the device comprises a bias voltage generator for providing a bias voltage to the sensors.
G01J 5/06 - Arrangements for eliminating effects of disturbing radiationArrangements for compensating changes in sensitivity
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
G01J 5/24 - Use of specially adapted circuits, e.g. bridge circuits
8.
ADAPTIVE CHARGE MEASUREMENT CIRCUIT FOR DATA CONVERTERS
Data converter circuits and methods of operating the data converter circuits are disclosed. In some embodiments, a data converter circuit includes a charge measurement circuit. In some embodiments, the charge measurement circuit is a capacitive transimpedance amplifier (CTIA). In some embodiments, the data converter circuit includes the CTIA, a quantizer, a digital-to-analog converter, a summer, and a digital filter. In some embodiments, the data converter circuit includes an analog-to-digital converter electrically coupled to the CTIA and the digital filter. In some embodiment, a method includes integrating an input signal with a CTIA, determining whether a CTIA output signal is greater than a threshold, and reducing the CTIA output signal or forgoing the reducing based on the determination of whether the CTIA output signal is greater than the threshold.
Some embodiments include methods of manufacturing a plurality of MEMS devices, each device including a first material and a second material with different CTE. The method includes providing a carrier with substantially equal CTE as the first material, the carrier comprising a plurality of cavities. The method also includes positioning a plurality of components in respective cavities of the carrier, the components comprising the second material. In some embodiments, the method includes positioning a layer of the first material on the second material components. In some embodiments, the method includes bonding the first material layer and the second material components. The method also includes removing the carrier and singulating the first material layer to produce the plurality of MEMS devices.
Methods and systems for sensing a user interaction (e.g., a fingerprint) with a display of an electronic device are disclosed. In some embodiments, the method includes illuminating, with a light source, a position of a user interaction on the display. In some embodiments, the method includes detecting, with a detector, a backscattered light from the position. In some embodiments, the light source and the detector are located on a same layer of the display.
Disclosed herein are MEMS devices and systems and methods of manufacturing or operating the MEMS devices and systems. In some embodiments, the MEMS devices and systems are used in imaging applications.
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
H04N 23/11 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
Systems and methods for spectrometry are disclosed. In some embodiments, the system comprises a Fourier Transform Spectrometer (FTS) comprising a waveguide and a delay element. In some embodiments, the method comprises determining a power spectral density of an input optical signal via the FTS.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
Methods of sensor readout and calibration and circuits for performing the methods are disclosed. In some embodiments, the methods include driving an active sensor at a voltage. In some embodiments, the methods include use of a calibration sensor, and the circuits include the calibration sensor. In some embodiments, the methods include use of a calibration current source and circuits include the calibration current source. In some embodiments, a sensor circuit includes a Sigma-Delta ADC. In some embodiments, a column of sensors is readout using first and second readout circuits during a same row time.
Electronic devices comprising pixels for sensing, methods for operating the electronic devices, and methods for manufacturing the electronic devices are disclosed. In some embodiments, the electronic devices comprise hinges for supporting the pixels. In some embodiments, the electronic devices are configured to provide a bias voltage to the pixels.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
Microelectromechanical system (MEMS) devices, methods of operating the MEMS device, and methods of manufacturing the MEMS device are disclosed. In some embodiments, the MEMS device includes a glass substrate; an electrode on the glass substrate; a hinge mechanically coupled to the electrode; a membrane mirror mechanically coupled to the hinge; a TFT on the glass substrate and electrically coupled to the electrode; and a control circuit comprising: a multiplexer configured to turn on or turn off the TFT; and a drive source configured to provide a drive signal for charging the electrode through the TFT. An amplitude of the drive signal corresponds to an amount of charge, and the amount of charge generates an electrostatic force for actuating the hinge and a portion of the membrane mirror mechanically coupled to the hinge. In some embodiments, the MEMS devices comprise a charge transfer circuit for providing the amount of charge.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
Circuitries for controlling a power consuming device are disclosed. Methods for operating the circuitries and manufacturing the circuitries are also disclosed. In some embodiments, the circuit comprises a first thin-film transistor (TFT), a second TFT, and a storage capacitor. The first TFT is configured to output a current to a power consuming device. The second TFT is configured to provide a control voltage to the first TFT for controlling an amount of the current. The storage capacitor is configured to store the control voltage.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/10 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
H01L 27/01 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
H01L 27/13 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
In some embodiments, electromechanical systems including a semiconductor layer that has a planar surface and includes conductive and adjacent non-conductive regions and a hermetic seal applied above the planar surface and methods of manufacturing the systems are disclosed. In some embodiments, electromechanical devices that include first and second planar semiconductor layers are disclosed. Each of the semiconductor layers includes conductive regions, and at least one conductive region from each of the layers is electrically coupled to each other. Methods of manufacturing the electromechanical devices are also disclosed.
Data converter circuits and methods of operating the data converter circuits are disclosed. In some embodiments, a data converter circuit includes a charge measurement circuit. In some embodiments, the charge measurement circuit is a capacitive transimpedance amplifier (CTIA). In some embodiments, the data converter circuit includes the CTIA, a quantizer, a digital-to-analog converter, a summer, and a digital filter. In some embodiments, the data converter circuit includes an analog-to-digital converter electrically coupled to the CTIA and the digital filter. In some embodiment, a method includes integrating an input signal with a CTIA, determining whether a CTIA output signal is greater than a threshold, and reducing the CTIA output signal or forgoing the reducing based on the determination of whether the CTIA output signal is greater than the threshold.
Some embodiments include methods of manufacturing a plurality of MEMS devices, each device including a first material and a second material with different CTE. The method includes providing a carrier with substantially equal CTE as the first material, the carrier comprising a plurality of cavities. The method also includes positioning a plurality of components in respective cavities of the carrier, the components comprising the second material. In some embodiments, the method includes positioning a layer of the first material on the second material components. In some embodiments, the method includes bonding the first material layer and the second material components. The method also includes removing the carrier and singulating the first material layer to produce the plurality of MEMS devices.
A low-power image sensor includes a plurality of light-sensitive pixel cells, a plurality of analog-to-digital converters (ADCs) and image processing circuitry. The image sensor can be disposed in multiple semiconductor layers such that the pixel cells are disposed in a first layer and various other components are disposed in the second layer or between the first layer and the second layer. The image sensor is configured such that the analog output of a pixel cell is sampled by a first ADC and a second ADC within respective first and second dynamic ranges, the second dynamic range being greater than the first dynamic range. The first ADC and the second ADC sample the analog output with different sampling resolutions. The digital outputs of the first ADC and the second ADC are subsequently used by an image processor to generate a pixel value for an image frame.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Microelectromechanical system (MEMS) devices, methods of operating the MEMS device, and methods of manufacturing the MEMS device are disclosed. In some embodiments, the MEMS device includes a glass substrate; an electrode on the glass substrate; a hinge mechanically coupled to the electrode; a membrane mirror mechanically coupled to the hinge; a TFT on the glass substrate and electrically coupled to the electrode; and a control circuit comprising: a multiplexer configured to turn on or turn off the TFT; and a drive source configured to provide a drive signal for charging the electrode through the TFT. An amplitude of the drive signal corresponds to an amount of charge, and the amount of charge generates an electrostatic force for actuating the hinge and a portion of the membrane mirror mechanically coupled to the hinge.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
In some embodiments, electromechanical systems including a semiconductor layer that has a planar surface and includes conductive and adjacent non-conductive regions and a hermetic seal applied above the planar surface and methods of manufacturing the systems are disclosed. In some embodiments, electromechanical devices that include first and second planar semiconductor layers are disclosed. Each of the semiconductor layers includes conductive regions, and at least one conductive region from each of the layers is electrically coupled to each other. Methods of manufacturing the electromechanical devices are also disclosed.
Disclosed herein are MEMS devices and systems and methods of manufacturing or operating the MEMS devices and systems for transmitting and detecting radiation. The devices and methods described herein are applicable to terahertz radiation. In some embodiments, the MEMS devices and systems are used in imaging applications. In some embodiments, a microelectromechanical system comprises a glass substrate configured to pass radiation from a first surface of the glass substrate through a second surface of the glass substrate, the glass substrate comprising TFT circuitry; a lid comprising a surface; spacers separating the lid and glass substrate; a cavity defined by the spacers, surface of the lid, and second surface of the glass substrate; a pixel in the cavity, positioned on the second surface of the glass substrate, electrically coupled to the TFT circuitry, and comprising an absorber to detect the radiation; and a reflector to direct the radiation to the absorbers and positioned on the lid.
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Methods of sensor readout and calibration and circuits for performing the methods are disclosed. In some embodiments, the methods include driving an active sensor at a voltage. In some embodiments, the methods include use of a calibration sensor, and the circuits include the calibration sensor. In some embodiments, the methods include use of a calibration current source and circuits include the calibration current source. In some embodiments, a sensor circuit includes a Sigma-Delta ADC. In some embodiments, a column of sensors is readout using first and second readout circuits during a same row time.
Methods and systems for sensing a user interaction (e.g., a fingerprint) with a display of an electronic device are disclosed. In some embodiments, the method includes illuminating, with a light source, a position of a user interaction on the display. In some embodiments, the method includes detecting, with a detector, a backscattered light from the position. In some embodiments, the light source and the detector are located on a same layer of the display.
G06F 1/16 - Constructional details or arrangements
G06F 3/0488 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
26.
Capping plate for panel scale packaging of MEMS products
A method of manufacturing MEMS housings includes: providing glass spacers; providing a window plate; attaching the window plate to the glass spacers; aligning the glass spacers with a device glass plate having MEMS devices thereon; bonding the glass spacers to the device glass plate; and singulating the glass spacers, window plate, and device glass plate to produce the MEMS housings.
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
28.
Integrated packaging devices and methods with backside interconnections
This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
29.
Systems and methods for low-power image digitization
A low-power image sensor includes a plurality of light-sensitive pixel cells, a plurality of analog-to-digital converters (ADCs) and image processing circuitry. The image sensor can be disposed in multiple semiconductor layers such that the pixel cells are disposed in a first layer and various other components are disposed in the second layer or between the first layer and the second layer. The image sensor is configured such that the analog output of a pixel cell is sampled by a first ADC and a second ADC within respective first and second dynamic ranges, the second dynamic range being greater than the first dynamic range. The first ADC and the second ADC sample the analog output with different sampling resolutions. The digital outputs of the first ADC and the second ADC are subsequently used by an image processor to generate a pixel value for an image frame.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Disclosed herein are MEMS devices and systems and methods of manufacturing or operating the MEMS devices and systems for transmitting and detecting radiation. The d evices and methods described herein are applicable to terahertz radiation. In some embodiments, the MEMS devices and systems are used in imaging applications. In some embodiments, a microelectromechanical system comprises a glass substrate configured to pass radiation from a first surface of the glass substrate through a second surface of the glass substrate, the glass substrate comprising TFT circuitry; a lid comprising a surface; spacers separating the lid and glass substrate; a cavity defined by the spacers, surface of the lid, and second surface of the glass substrate; a pixel in the cavity, positioned on the second surface of the glass substrate, electrically coupled to the TFT circuitry, and comprising an absorber to detect the radiation; and a reflector to direct the radiation to the absorbers and positioned on the lid.
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Methods of sensor readout and calibration and circuits for performing the methods are disclosed. In some embodiments, the methods include driving an active sensor at a voltage. In some embodiments, the methods include use of a calibration sensor, and the circuits include the calibration sensor. In some embodiments, the methods include use of a calibration current source and circuits include the calibration current source. In some embodiments, a sensor circuit includes a Sigma-Delta ADC. In some embodiments, a column of sensors is readout using first and second readout circuits during a same row time.
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
G01J 5/24 - Use of specially adapted circuits, e.g. bridge circuits
32.
CAPPING PLATE FOR PANEL SCALE PACKAGING OF MEMS PRODUCTS
A method of manufacturing MEMS housings includes: providing glass spacers; providing a window plate; attaching the window plate to the glass spacers; aligning the glass spacers with a device glass plate having MEMS devices thereon; bonding the glass spacers to the device glass plate; and singulating the glass spacers, window plate, and device glass plate to produce the MEMS housings.
A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.
Conventional optical lens assembly typically require a capping window, which is expensive, to protect the optical sensor. Also, each conventional optical lens assembly is discretely assembled, and thus incurs additional costs. To address these and other disadvantages, it is proposed to assemble a plurality of imaging sensors, a plurality of spacers, and a plurality of lenses at a panel. The resulting lens assembly array can be individualized into separate lens assemblies.
Conventional package for integration of MEMS and electronics suffer from profiles that are undesirably high to due to the thickness of the glass. Also in conventional package manufacturing, the MEMS and electronic devices are first individualized, and the individualized MEMS and electronics are combined into a package, and thus can be costly. To address these and other disadvantages, a panel level packaging is proposed. In this proposal, plural MEMS devices are integrated with plural semiconductor devices at a panel level, and the panel is then individualized into separate packages.
Conventional package for integration of MEMS and electronics suffer from profiles that are undesirably high to due to the thickness of the glass. Also in conventional package manufacturing, the MEMS and electronic devices are first individualized, and the individualized MEMS and electronics are combined into a package, and thus can be costly. To address these and other disadvantages, a panel level packaging is proposed. In this proposal, plural MEMS devices are integrated with plural semiconductor devices at a panel level, and the panel is then individualized into separate packages.
This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.
This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
39.
Thermomechanical device for measuring electromagnetic radiation
Methods and devices are disclosed for sensing radiation emitted by an object. For example, one device includes a substrate and a movable layer coupled to the substrate. The movable layer is configured to receive radiation from the object and move relative to the substrate to a position in response to a change in temperature. The device also includes a sensor that is configured to produce a signal responsive to the position of the movable layer. The signal is indicative of the radiation emitted by the object.
Techniques are disclosed for generating a high resolution image from a plurality of images captured from a plurality of sensors. The pixels in one sensor have at least one of different size, shape, or orientation than pixels in another sensor. The difference in size, shape, or orientation of the pixels and the interconnection of pixels on respective sensors provides a high level of certainty that there will be sufficient difference in the captured images, with limited loss in image content, to generate a relatively high resolution image from the images captured by the respective sensors.
Techniques are disclosed for generating a high resolution image from a plurality of images captured from a plurality of sensors. The pixels in one sensor have at least one of different size, shape, or orientation than pixels in another sensor. The difference in size, shape, or orientation of the pixels and the interconnection of pixels on respective sensors provides a high level of certainty that there will be sufficient difference in the captured images, with limited loss in image content, to generate a relatively high resolution image from the images captured by the respective sensors.
patents
