Abstract

A method of fabricating a heterojunction all-back-contact (ABC) solar cell, the method comprising the steps of: forming an emitter film on one side of a doped substrate; forming a conductive interlayer on the deposited emitter film; forming at least one channel, the channel cutting through at least the emitter film and the conductive interlayer; forming a continuous back surface field film on the deposited conductive interlayer and the channel formed; and forming a plurality of metallic grids on the deposited back surface field film, wherein at least a portion of at least one of the plurality of metallic grids is formed in the channel.

IPC Classes  ?

• H01L 31/0216 - Coatings
• H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• H01L 31/061 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being of the point-contact type
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A hybrid all-back-contact (ABC) solar cell and method of fabricating the same. The method comprises: forming one or more patterned insulating passivation layers over at least a portion of an absorber of the solar cell; forming one or more heterojunction layers over at least a portion of the one or more patterned insulating passivation layers to provide one or more heterojunction point or line-like contacts between the one or more heterojunction layers and the absorber of the solar cell; forming one or more first metal regions over at least a portion of the one or more heterojunction layers; forming a doped region within the absorber of the solar cell; and forming one or more second metal regions over at least a portion of the doped region and contacting the doped region to provide one or more homojunction contacts.

IPC Classes  ?

• H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups

Abstract

According to one aspect, there is provided a method of fabricating a solar cell comprising: forming a patterned passivation layer that is in contact with a surface of a wafer, the surface being doped with dopant of a first polarity; and masklessly performing, over the patterned passivation layer, a fabrication step selected from the steps of: etching further, trenches in the surface of the wafer that result after forming the patterned passivation layer; and doping the trenches with dopant of second polarity that is opposite to the dopant of the first polarity.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/042 - PV modules or arrays of single PV cells
• H01L 21/283 - Deposition of conductive or insulating materials for electrodes
• H01L 31/0236 - Special surface textures
• H01L 31/0224 - Electrodes

Abstract

According to one aspect, there is provided a method of fabricating a solar cell comprising: performing metallisation over a patterned passivation layer that provides access to predetermined material in trenches in a surface of a wafer, wherein metal contacts are formed within the trenches in the surface of the wafer in response to the predetermined material.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/042 - PV modules or arrays of single PV cells
• H01L 21/283 - Deposition of conductive or insulating materials for electrodes
• H01L 31/0236 - Special surface textures
• H01L 31/0224 - Electrodes

Abstract

Selectively doped layers for interdigitated back contact solar cells and method of fabricating the same. The method comprising the steps of: forming a patterned dielectric layer on a doped wafer such that the patterned dielectric layer exposes at least a selected portion of the wafer; forming a doping layer over at least the exposed selected portion of the wafer; and heating the doping layer such that the dopant atoms in the doping layer are introduced into the exposed selected portion of the wafer to selectively dope the exposed portion of the wafer.

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
• H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant

Abstract

A method of fabricating an all-back-contact (ABC) solar cell is disclosed. A doped layer of a first polarity (102) is formed on a rear side of a wafer (100). A first masking structure (106, 110) is formed on the doped layer of the first polarity. Portions of the first masking structure (106, 110) are removed using a first laser ablation process. Doped regions of a second polarity (118, 135, 137) are formed in areas where the first masking structure has been removed. Contact bars (134, 136) are formed by screen printing and firing such that each contact bar is in contact with one of the doped regions (135, 137).

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
• H01L 31/0256 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by the material
• H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier

Abstract

A method of fabricating an all-back-contact (ABC) solar cell, and an ABC solar cell. The method comprises the steps of forming respective pluralities of different polarity rear side doped regions on a wafer; forming an insulating layer on the doped regions; and forming conducting bars on the insulating layer such that each conducting bar is in electrical contact with different ones of the doped regions of the same polarity.

IPC Classes  ?

• H01L 31/0224 - Electrodes
• H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
• H01L 31/0256 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by the material
• H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier