A method of bonding an RE:XAB gain medium to a heat spreader includes using a bonding solution of sodium silicate with concentration of sodium silicate is Na2O at 21.2% and SiO2 at 53% with PH>=11 mixed with nano-pure water in a 1:1 ration. Applying the bonding solution onto either a surface of the RE:XAB or a surface of the heat spreader, aligning the RE:XAB and the heat spreader, applying pressure to draw the surfaces of the RE:XAB gain medium and the heat spreader together thereby uniformly spreading the bonding solution; and then curing the bonding solution.
H01S 3/106 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
H01S 3/102 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
H01S 3/113 - Q-switching using intracavity saturable absorbers
H01S 3/131 - Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
A 3D stacked electro-optical radiation imaging device with a plurality of integrated circuit layers, the device having a pixelated array of semiconductor detector elements, in which each detecting element is electrically connected a stacked integrated circuit. The stacked integrated circuit has a mixed signal layer and a reconfigurable layer. The mixed signal layer has a passive signal path and an active signal path. A readout decoder block controls operation of the passive paths. The active signal path triggers readout upon transient event detection and is readout by an address arbitration control block, the address arbitration control block operating independent and asynchronous to the readout of the passive path and transient event detection initiates the identification of the location of and readout of the signaling active path. The reconfigurable layer has processing units that each correspond to one or more pixels in the pixelated array. The processing units are reconfigurable through received signals from either the passive path, the active path, or an external signal. A controller programs and communicates with the mixed signal layer and reconfigurable layer
An epitaxial grown avalanche photodiode (APD), the avalanche photodiode comprising an anode, a cathode, an absorber, and a doped multiplier. The absorber and the doped multiplier are about between the cathode and the anode. The doped multiplier has a multiplier dopant concentration. The doped multiplier substantially depleted during operation of the epitaxial grown photodiode. The doped multiplier may comprise of a plurality of multiplication regions, each of the multiplication regions substantially depleted during operation of the avalanche photodiode.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
A composite quantum-dot photodetector comprising a substrate with a colloidally deposited thin film structure forming a photosensitive region, the thin film containing at least one type of a nanocrystal quantum-dot, whereby the nanocrystal quantum dots are spaced by ligands to form a lattice, and the lattice of the quantum dots has an infill material that forms an inorganic matrix that isolates the nanocrystal quantum dots from atmospheric exposure.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
A method of operating a q-switch RE,XAB laser includes: providing a pump bias current to a pump source, the pump source directed to an RE:XAB gain medium, the RE:XAB gain medium within a resonator cavity, where X is selected from Ca, Lu, Yb, Nd, Sm, Eu, Gd, Ga, Tb, Dy, Ho, Er, and where RE is selected from Lu, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Pr, Tm, Cr, Ho, with a bias current level below a lasing threshold of the RE:XAB gain medium; providing a pump pulse to the gain medium, the pump pulse of the lasing threshold of the RE:XAB gain medium, the pump pulse causing the RE:XAB gain medium to emit a laser pulse; and reducing the pump bias current to at least below the gain medium lasing threshold, the combination of the pump bias, the pump pulse, and the pump reduction having a current profile.
H01S 3/131 - Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
H01S 3/115 - Q-switching using intracavity electro-optic devices
H01S 3/117 - Q-switching using intracavity acousto-optic devices
H01S 3/121 - Q-switching using intracavity mechanical devices
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
H01S 3/113 - Q-switching using intracavity saturable absorbers
A laser system comprising an RE:XAB gain medium within a resonator cavity. X is selected from Ca, Lu, Yb, Nd, Sm, Eu, Gd, Ga, Tb, Dy, Ho, Er, and RE is selected from Lu, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Pr, Tm, Cr, Ho. The system further comprises a pumping source having optical output directed towards the gain medium. A laser controller operates the pumping source. The system further comprises a heat spreader, the heat spreader in thermal communication with the gain medium through a surface wherein the pump source has optical output incident.
H01S 3/0933 - Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
H01S 3/094 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
H01S 3/131 - Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
H01S 3/06 - Construction or shape of active medium
H01S 3/042 - Arrangements for thermal management for solid state lasers
An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
A method of operating a q-switch Er,Yb:YAB laser includes providing a pump bias current to a pump source, the pump source output directed to an Er,Yb:YAB gain medium where the Er,Yb:YAB gain medium is in a resonator cavity. The bias current at or below a lasing threshold of the Er,Yb:YAB gain medium. Providing a pump pulse to the gain medium, the pump pulse over the lasing threshold of the Er,Yb:YAB gain medium, the pump pulse causing the Er,Yb:YAB gain medium to emit a laser pulse. Reducing the pump bias current, wherein the pump current reduction brings the pump bias current to at least below the gain medium lasing threshold, the combination of the pump bias, the pump pulse, and the pump reduction having a current profile.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01S 3/042 - Arrangements for thermal management for solid state lasers
H01S 3/13 - Stabilisation of laser output parameters, e.g. frequency or amplitude
H01S 3/131 - Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
H01S 3/113 - Q-switching using intracavity saturable absorbers
H01S 3/115 - Q-switching using intracavity electro-optic devices
H01S 3/117 - Q-switching using intracavity acousto-optic devices
A method of manufacturing a composite quantum-dot photodetector formed by alternatively dipping a substrate into a colloidal solution containing at least one type of a quantum dot, thereby forming a monolayer of the quantum dots and then dipping the substrate with the monolayer of the quantum dots into a ligand spacing solution to build a film of the quantum dots and then alternatively exposing the film of the quantum dots to a vapor and an infill material.
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A laser system, the laser comprising a codoped Er,Yb:YAB gain medium, the gain medium within a resonator cavity. The laser system further comprising a pumping source, the pumping source having optical output directed towards the gain medium. The laser system further comprising a laser controller, the laser controller operating the pumping source.
H01S 3/092 - Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
H01S 3/0933 - Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
H01S 3/042 - Arrangements for thermal management for solid state lasers
H01S 3/13 - Stabilisation of laser output parameters, e.g. frequency or amplitude
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01S 3/094 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
H01S 3/113 - Q-switching using intracavity saturable absorbers
H01S 3/115 - Q-switching using intracavity electro-optic devices
H01S 3/117 - Q-switching using intracavity acousto-optic devices
H01S 3/121 - Q-switching using intracavity mechanical devices
A method of operating an avalanche photodiode includes providing an avalanche photodiode having a multiplication region capable of amplifying an electric current when subject to an electric field. The multiplication region, in operation, has a first ionization rate for electrons and a second, different, ionization rate for holes. The method also includes applying the electric field to the multiplication region, receiving a current output from the multiplication region, and varying the electric field in time, whereby a portion of the current output is suppressed.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
An imaging device is disclosed, the device comprising a pixelated array of semiconductor elements, in which each detecting element is electrically connected to an integrated circuit, the integrated circuit comprising a passive signal path and an active signal path. The passive path provides consecutive frame imaging and the active path detects the location of transient events. The device further comprising a readout decoder block, the readout decoder block controlling operation of the passive paths. Additionally, the device comprises of an address arbitration control block, the address arbitration control block controlling operation of the active paths, wherein the address arbitration control block readout of the active paths are independent of readout of the integrated signal readout from the passive paths.
H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
13.
Discriminating photo counts and dark counts in an avalanche photodiode output
The output of an avalanche photodiode (APD) comprises a “photocurrent” component comprising photon initiated events resulting from the interaction of photons with the APD and a “dark current” component comprising dark carrier events arising in the APD even when the APD is not exposed to light. Differences in the pulse height distributions of photon initiated events and dark carrier initiated events are used to statistically discriminate between photocurrent and dark current components of APD output.
G01J 1/18 - Photometry, e.g. photographic exposure meter by comparison with reference light or electric value using electric radiation detectors using comparison with a reference electric value
48, where 2.8≦i≦3.2, 0.8≦j≦1.2, i and j sum to about four, and k is about 12 is provided. The nonlinear optical crystal is useful for nonlinear optical applications including frequency conversion. Nonlinear optical crystals in a specific embodiment are characterized by UV blocking materials (e.g., some transition metals and lanthanides) at concentrations of less than 1,000 parts per million, providing high transmittance over portions of the UV spectrum (e.g., 175-360 nm).
12, where R comprises one or a plurality of elements {Sc, La, Y, Lu}. The nonlinear optical material is characterized by an optical transmission greater than 70% over the wavelength range of 190 to 350 nm.
A CMOS image sensor array has rows and columns of active pixels, and column lines in communication with the active pixels in the respective columns. Each active pixel has an output connected to a column line and includes a photodetector that produces a signal proportional to incident light intensity that is coupled to an active pixel output based on column select and row select signals. Each active pixel has a reset transistor for resetting the active pixel, wherein each reset transistor has a first gate terminal and a second gate terminal. The reset transistors have a variable threshold capability that allows increased sensor array dynamic range or mitigation of the effects of temperature or radiation induced transistor threshold voltage shifts. Row select, column select, and sense transistors can also be configured to have variable thresholds.
A CMOS image sensor array has rows and columns of active pixels, and column lines in communication with the active pixels in the respective columns. Each active pixel has an output connected to a column line and includes a photodetector that produces a signal proportional to incident light intensity that is coupled to an active pixel output based on column select and row select signals. Each active pixel has a reset transistor for resetting the active pixel, wherein each reset transistor has a first gate terminal and a second gate terminal. The reset transistors have a variable threshold capability that allows increased sensor array dynamic range or mitigation of the effects of temperature or radiation induced transistor threshold voltage shifts. Row select, column select, and sense transistors can also be configured to have variable thresholds.
H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
A LIDAR system that includes a streak image sensor having multiple sensor elements for receiving optical return signals from portions of a spatial region within their respective instantaneous fields of view is operated by periodically sampling and storing electrical signals generated by the sensor elements respectively, and initiating the periodic sampling of the electrical signals of each sensor individually and independently by reference to a feature of that sensor's electrical signal that represents a boundary between materials with different optical properties.
A laser system includes a seed laser operable to output a seed laser signal along an optical path and a phase modulator disposed along the optical path and operable to receive the seed laser signal. The laser system also includes a phase modulator driver coupled to the phase modulator. A drive signal from the phase modulator driver is operable to produce, as an output from the phase modulator, an unmodulated seed laser signal when the drive signal is associated with a first state and a modulated seed laser signal when the drive signal is associated with a second state. The laser system further includes a fiber amplifier disposed along the optical path and operable to receive the output of the phase modulator. A spectral bandwidth of an output of the fiber amplifier associated with the second state is less than a spectral bandwidth of the output of the fiber amplifier associated with the first state.
A photovoltaic device has nanoparticles sandwiched between a conductive substrate and a charge selective transport layer. Each of the nanoparticles has a ligand shell attached to the nanoparticle core. A first type of ligand is electron rich and attached to one hemisphere of the nanoparticle core, while a second type of ligand is electron poor and attached to an opposite hemisphere of the core. Consequently, the ligand shell induces an electric field within the nanoparticle, enhancing the photovoltaic effect. The arrangement of ligands types on different sides of the nanoparticle is obtained by a process involving ligand substitution after adhering the nanoparticles to the conductive substrate.
An apparatus for producing coherent pulsed light with a fiber-based master oscillator/fiber amplifier architecture includes a fiber-coupled mode-locked laser source. The fiber-coupled mode-locked laser source is configured to provide pulses having a pulse duration of less than 1 ns. The apparatus also includes a fiber-coupled amplitude modulator optically coupled to the fiber-coupled mode-locked laser source. The fiber-coupled amplitude modulator is capable of gate durations greater than 1 ns. The apparatus further includes a saturated fiber power amplifier optically coupled to the fiber-coupled amplitude modulator.
H01S 3/30 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
48, where 2.8≦i≦3.2, 0.8≦j≦1.2, i and j sum to about four, and k is about 12 is provided. The nonlinear optical crystal is useful for nonlinear optical applications including frequency conversion. Nonlinear optical crystals in a specific embodiment are characterized by UV blocking materials (e.g., some transition metals and lanthanides) at concentrations of less than 1,000 parts per million, providing high transmittance over portions of the UV spectrum (e.g., 175-360 nm).
An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and the cathode layer, a second multiplying stage between the first multiplying stage and the cathode layer, and a carrier relaxation region between the first and second multiplying stages. Each multiplying stage includes, in the direction of drift of electrons, a first layer that is doped with acceptors, a second layer that is substantially undoped, a third layer that is doped with acceptors, a fourth layer that is substantially undoped, and a fifth layer that is doped with donors.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
patents