Abstract

In various embodiments, an insulated conductor and method for making an insulated conductor are presented. In one example, an insulated conductor comprises one or more electrically conductive materials having a layer of aluminium and a dielectric skin formed on it in designated regions. The dielectric skin comprises nanograin alumina that is manufactured in an electrochemical cell by conversion of part of the thickness of the aluminium. The dielectric skin can extend into or through the thickness of the conductive materials in any three-dimensional cavity shape that can be made in or coated with aluminium. The structure can be used as an electrical conductor with a dielectric skin. The structure can be used as a metal-in-board printed circuit board. The cavities can form electrical and thermal vias.

IPC Classes  ?

• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
• H05K 1/05 - Insulated metal substrate
• H05K 1/09 - Use of materials for the metallic pattern
• H05K 3/44 - Manufacturing insulated metal core circuits

Abstract

A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, whereas the amplitude of the negative voltage pulses is galvanostatically controlled.

IPC Classes  ?

• C25D 11/02 - Anodisation
• C25D 5/18 - Electroplating using modulated, pulsed or reversing current
• C25D 11/00 - Electrolytic coating by surface reaction, i.e. forming conversion layers
• C25D 11/04 - Anodisation of aluminium or alloys based thereon
• C25D 11/26 - Anodisation of refractory metals or alloys based thereon
• C25D 11/30 - Anodisation of magnesium or alloys based thereon
• C25D 11/32 - Anodisation of semiconducting materials
• C25D 13/02 - Electrophoretic coating characterised by the process with inorganic material
• C25D 21/12 - Process control or regulation
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H05K 1/05 - Insulated metal substrate
• C25D 11/06 - Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
• C25D 15/00 - Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
• H05K 1/02 - Printed circuits Details
• H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
• H05K 1/18 - Printed circuits structurally associated with non-printed electric components
• H01L 23/373 - Cooling facilitated by selection of materials for the device
• H01L 23/367 - Cooling facilitated by shape of device

Abstract

A flexible electronic substrate (FES) comprises a metallic layer, a dielectric nanoceramic layer formed by oxidation of a surface of the metallic layer, and an electrical circuit formed on a surface of the dielectric layer. The FES may be used for supporting a device, for example a flexible display, an OLED, an optoelectronic device, or a rf device. The dielectric nanoceramic layer has a crystalline structure consisting of substantially equiaxed grains having an average grain size of 100 nanometres or less, a thickness of between 1 micrometre and 50 micrometres, a dielectric strength of greater than 20 KV mm-1, and a thermal conductivity of greater than 3 W/mK. The FES has a minimum bend radius of lower than 25 cm.

IPC Classes  ?

• C25D 11/02 - Anodisation
• C25D 11/06 - Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
• H05K 1/05 - Insulated metal substrate

Abstract

A metal substrate with insulated vias (MSIV) has a metallic layer with through- holes defined through a thickness of the layer, a dielectric layer formed on part of the surface of the metallic layer and extending to cover internal walls of the through-hole, a conductive material extending through the insulated through- hole to form an insulated via, and an electrical circuit formed on a portion of the dielectric layer in thermal and/or electrical contact with the conductive via. The dielectric layer is a dielectric nanoceramic layer having an equiaxed crystalline structure with an average grain size of 500 nanometres or less, a thickness of between 0.1 and 100 micrometres, a dielectric strength of greater than 20 KV mm-1, and a thermal conductivity of greater than 3 W/mK. Such a MSIV can be used as an electronic substrate to support devices such as power, microwave, optoelectronic, solid-state lighting and thermoelectric devices.

IPC Classes  ?

• H05K 3/44 - Manufacturing insulated metal core circuits
• C25D 11/02 - Anodisation
• C25D 11/06 - Anodisation of aluminium or alloys based thereon characterised by the electrolytes used

Abstract

An insulated metal substrate (IMS) for supporting a device comprises a metallic substrate having a ceramic coating formed at least in part by oxidation of a portion of the surface of the metallic substrate. The ceramic coating has a dielectric strength of greater than 50 KV mm-1and a thermal conductivity of greater than 5 Wm-1K-1.

IPC Classes  ?

• C25D 5/18 - Electroplating using modulated, pulsed or reversing current
• C25D 11/00 - Electrolytic coating by surface reaction, i.e. forming conversion layers
• C25D 11/04 - Anodisation of aluminium or alloys based thereon
• C25D 11/26 - Anodisation of refractory metals or alloys based thereon
• C25D 11/30 - Anodisation of magnesium or alloys based thereon
• C25D 11/32 - Anodisation of semiconducting materials
• C25D 13/02 - Electrophoretic coating characterised by the process with inorganic material
• C25D 21/12 - Process control or regulation
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties