The invention discloses a vacuum coating system for coating substrates which are transported along or on a circular path, wherein the vacuum coating system comprises at least one coating chamber, wherein at least one carrier element is arranged in the coating chamber, on which carrier element at least one sputtering target made from a coating material is arranged. The problem of providing a vacuum coating system, by way of which substrates which are to be transported along or on a circular path are to be coated with a higher coating rate in comparison with known sputter coating systems and therefore coatings are to be produced with higher productivity, is solved by virtue of the fact that the vacuum coating system has at least two coating chambers, wherein the carrier element has at least two sputtering targets in each of the coating chambers, wherein the sputtering targets are formed from the same or from different sputtering materials. The invention likewise discloses a method for coating substrates which are transported along or on a circular path with an increased coating rate by means of the vacuum coating system according to the invention.
06 - Common metals and ores; objects made of metal
07 - Machines and machine tools
Goods & Services
Metal sputtering targets; Targets of metal for cathode nebulising; Sputter targets of metal for cathode nebulising. Coating machines, in particular Machines for surface coating technologies under vacuum or high vacuum; parts of coating machines, in particular Machines for surface coating technologies under vacuum or high vacuum; Components of coating machines, in particular Machines for surface coating technologies under vacuum or high vacuum; Sputter ion sources being parts of machines; Sputter ion sources being parts of coating machines; Parts of machines for surface coating technologies under vacuum or high vacuum; Sputter ion sources [machines]; Sputter coating guns; and vacuum systems comprised of material deposition equipment for research and industrial applications; Vacuum components, in particular Components and sputter ion sources; Sputter ion sources with multiple externally arranging target materials; Robots for machine tools; Robots for feeding workpieces.
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machine tools, in particular machines for surface coating
technologies under vacuum or high vacuum; robots; robots for
machine tools; robots for feeding workpieces; robotic
apparatus for handling materials; indoor autonomous robots
for conveying and storing goods in production equipment;
transport conveyors; conveyor systems and conveyor belts;
lifting and hoisting equipment; transporters [belt
conveyors]; unmanned transportation conveyors. Signalling, measuring and checking (supervision) apparatus
and instruments for vacuum and high vacuum technologies. Surface finishing of materials, in particular by surface
coating under vacuum or high vacuum, anodising, enamelling,
galvanization, phosphating, chromium plating, zinc plating.
4.
METHOD AND DEVICE FOR PROTECTING OXYGEN-SENSITIVE TARGET MATERIALS IN A COATING SOURCE
The invention discloses a method and a device for protecting oxygen-sensitive target materials in a coating source. The problem of specifying a method and arrangement, by means of which reactive, in particular oxygen-sensitive target materials of a coating source can be protected against contaminations and undesired reactions, is solved by a method in which first of all the shutter sealingly closes the coating source, and a protective gas is fed via a gas inlet into a coating source chamber which is formed by the coating source and the shutter. Here, a positive pressure is set in the coating source chamber with respect to a vacuum chamber pressure within the process chamber. Subsequently, a further gas for reacting with, that is to say neutralizing coatings in the process chamber, is fed into the process chamber. The process chamber is then ventilated with air or nitrogen, without an undesired reaction taking place. The process chamber is subsequently opened towards atmosphere, that is to say the door of the process chamber to the surrounding area is opened, wherein a positive pressure with respect to atmosphere is then constantly maintained in the coating source chamber.
The invention discloses a shutter system consisting of a shutter for shielding a coating source in a vacuum system, wherein the shutter is configured such that it can be slid in front of the coating source; and a method which is carried out by means of the shutter system according to the invention. The problem of the invention of specifying an arrangement for a shutter system, by means of which the coating source can be optimally shielded, in order to completely prevent both cross-contaminations and undesired coatings on a substrate to be coated, is solved by a shutter system in which the shutter can be positioned above the coating source by means of a rotary and/or pivoting and/or folding/tilting movement, and the shutter is configured to carry out an additional relative movement with respect to the coating source, and/or the coating source is configured to carry out an additional relative movement with respect to the shutter, wherein the shutter covers the coating source in a sealing and gap-free manner.
HLMHMLL, and the layers having different refractive indexes being alternately stacked. The problem addressed by the invention of providing a method which does not have long rinsing times between layer depositions and by means of which the optical layer system can be produced simply in short process times with a consistent quality and in large quantities is solved in that the layers of the optical layer system are deposited on a substrate by means of a selected coating method using a same material which is hydrated amorphous silicon (a-Si:H) or hydrated germanium (Ge:H), a refractive index and an extinction coefficient of each layer of the plurality of layers of the layer system being set by means of controlling process parameters of the selected coating method.
40 - Treatment of materials; recycling, air and water treatment,
09 - Scientific and electric apparatus and instruments
Goods & Services
Machine tools, in particular machines for surface coating technologies under vacuum or high vacuum; industrial robots; industrial robots for machine tools; industrial robots for feeding workpieces; industrial robotic apparatus for handling materials in the nature of glass, silicon wafers, wafers of Gallium Arsenide (GaAs), ceramic chips and wafers, metal chips and wafers; indoor autonomous industrial robots for conveying and storing goods in production equipment; transport conveyors being machines; conveyor systems comprised of conveyor belts; transporters, namely, belt conveyors; unmanned transportation conveyors, namely, belts and roller drives Applying surface finishing to materials, in particular by surface coating under vacuum or high vacuum, anodising, enamelling, galvanization, phosphating, chromium plating, zinc plating Signalling, measuring and checking apparatus and instruments for vacuum and high vacuum technologies in the nature of vacuum gauges, temperature sensors, voltage surge protectors, thermocouples
8.
METHOD AND DEVICE FOR COATING INDIVIDUAL SUBSTRATES IN A TWO-DRAFT/TWO-STORY INLINE VACUUM COATING SYSTEM
The invention relates to a method and a device for coating individual substrates, or substrates located on carriers, in a two-draft/two-story inline vacuum coating system having an upper transport level and a lower transport level with opposite transport directions. By means of the invention, inefficient cycles without material/substrates should be avoided, or they should be used twofold, and at the same time the system should be minimized, and complete assemblies should be rendered unnecessary. This is achieved in that the individual substrates (8', 9') or the substrates (8', 9') located in carriers (8, 9) are continuously input and output on one machine side in synchronization and, after passing through the thin-film etching or deposition devices (17, 18, 19), are transferred on the other machine side, in the vacuum transfer chamber (4), from one transport level (A) to the other transport level (B) without interruption of the vacuum and pass through additional thin-film etching or deposition devices.
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
9.
Method and device for homogeneously coating 3D substrates
A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0° at all times.
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machine tools, in particular machines for surface coating technologies under vacuum or high vacuum; Robots; Robots for machine tools; Robots for feeding workpieces; Robotic apparatus for handling materials; Transportation robots; Conveyors; Transporting machines; Conveyors and conveyors belts; Lifting and hoisting equipment; Transferring machines; Transferring machines. Signalling, measuring and checking (supervision) apparatus and instruments for vacuum and high vacuum technologies. Surface refinement of materials, in particular by surface coating under vacuum or high vacuum, anodising, enamelling, galvanising, phosphating, chromium plating, zinc plating.
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machine tools, in particular machines for surface coating technologies under vacuum or high vacuum; Robots; Robots for machine tools; Robots for feeding workpieces; Robotic apparatus for handling materials; Transportation robots; Conveyors; Transporting machines; Transporters; Belts for conveyors; Lifting and hoisting equipment; Transferring machines; Transferring machines. Signalling, measuring and checking (supervision) apparatus and instruments for vacuum and high vacuum technologies. Surface refinement of materials, in particular by surface coating under vacuum or high vacuum, anodising, enamelling, galvanising, phosphating, chromium plating, zinc plating.
The invention relates to a PECVD boat having at least one boat plate for accommodating wafers, for transport into and out of vacuum coating chambers. The problem addressed by the invention is the creation of a low-mass PECVD boat for accommodating wafers, for transport into and out of vacuum chambers, by means of which PECVD boat an increase in the throughput of the vacuum coating chambers is achieved by means of greater wafer capacity and shortened process cycles and energy savings are achieved in the heating and homogenization phase. This problem is solved in that the boat plate (21) is oriented vertically and has a plurality of U-shaped accommodating slots (23) for accommodating wafers (22), which slots are oriented in the longitudinal direction of the boat plate (21) and are open at the top, in such a way that the wafers (22) inserted into the accommodating slots (23) are aligned with the plate line of the boat plate (21).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Wafer boats for plasma treatment of disk-shaped wafers, in particular, semiconductor wafers for semiconductor or photovoltaic applications, and a plasma treatment device for wafers are described. A wafer boat has a plurality of first receiving elements arranged parallel to one another, which each have a plurality of receiving slots for receiving an edge region of a wafer or of a wafer pair, as well as a plurality of second receiving elements arranged parallel to one another which are each electrically conductive and have at least one depression for receiving an edge region of at least one wafer or one wafer pair. An alternative wafer boat has a plurality of electrically-conductive, plate-shaped receiving elements arranged parallel to one another which have a height that is less than half of the height of the wafers to be received, wherein the receiving elements each have at least three receiving elements on the opposing sides for receiving wafers. The wafer boats can be received in the processing chamber of the plasma treatment device, which has means for controlling or monitoring a process gas atmosphere in the processing chamber and at least one power source which can be connected to the electrically-conductive receiving elements of the wafer boat in a suitable way in order to apply an electrical voltage between directly adjacent wafers received in the wafer boat.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
The invention relates to a plasma treatment device for substrates and to a method for plasma-treating wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications. The device has an elongated processing chamber, which defines a receiving region for a wafer boat that is suitable for receiving a plurality of wafers; at least one gas conducting tube which extends in the processing chamber in the longitudinal direction and which is arranged on one side of the receiving region; and at least one gas conducting tube which extends in the processing chamber in the longitudinal direction and which is arranged on the opposite side of the receiving region. Each of the gas conducting tubes has a plurality of through-openings, which are spaced apart at least in the longitudinal direction of the gas conducting tubes, for the passage of gas, and the through-openings are formed in the gas conducting tube side facing the receiving region. Furthermore, at least one gas supply unit and at least one gas discharge unit are provided, wherein the at least one gas supply unit can be connected to at least one gas conducting tube, and the at least one gas discharge unit can be connected to the other gas conducting tube. In the method, a plurality of wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications, are received in a wafer boat in the processing chamber of a plasma treatment device of the aforementioned type, and the method has the following steps: setting a desired gas atmosphere in the processing chamber by introducing at least one gas over the entire length of the wafer boat via at least one of the gas conducting tubes; and applying a high-frequency alternating voltage to the wafer boat in order to generate a plasma between the received wafers during a processing phase.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a method for marking semiconductor wafers (38), wherein a mark is formed on an edge surface (42) of the semiconductor wafers (38) by applying a marking paint (20) to the edge surface (42) of the semiconductor wafers (38), said marking paint (20) being resistant to an etching medium that etches the semiconductor wafers (38), whereupon at least the edge surface (42) of the semiconductor wafers (38) to which the marking paint (20) has been applied is etched using the etching medium, the applied marking paint being used as an etching barrier. Also disclosed are a semiconductor wafer and a semiconductor column.
The invention describes an apparatus (1) and a method for soldering joining partners, in particular electrical components on printed circuit boards or other substrate elements. The joining partners can be received and pressed together between two plate elements (30, 31). One of the plate elements (31), which is heatable, can be flexible and can be elastically prestressed in the direction of the other plate element (30) by way of a multiplicity of elastically prestressed elements (62, 63). As an alternative or in addition, it is possible to provide a heating system (44, 48) for both plate elements (30, 31).
Disclosed is a wafer boat for holding wafers, in particular semiconductor wafers. The wafer boat comprises at least two elongate holding elements made of quartz, which each have a plurality of parallel holding slots extending transversely to the longitudinal extension, as well as two end plates, between which the holding elements are arranged and fastened in such a way that the holding slots of the holding elements are oriented towards one another. In order to increase the stability of the wafer boat, it has a plurality of fastening attachments via which the holding elements are fastened to the end plates, wherein each fastening attachment is at least 1.5 times as large as a holding region of the holding elements that contains the receiving slots, and wherein each fastening attachment is welded or bonded to at least one of the following elements: an end plate and a holding element. In a further embodiment, which can be combined with the first-mentioned embodiment, the holding elements have, next to the end plates, at least one load relief slot, preferably at least two load relief slots, having a depth that is smaller than the depth of the holding slots, wherein, if there are at least two load relief slots, the depth increases as the distance from the end plates increases.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
The invention relates to a method and a device for detecting a plasma in a process chamber for treating substrates. In the method, the pressure within the process chamber is measured by means of a pressure sensor over a time period, a sudden pressure change is detected, and an ignition or an extinguishing of a plasma is identified on the basis of at least the pressure change. The device comprises: a process chamber for accommodating at least one substrate, which process chamber has at least one plasma generator; at least one pressure sensor, which is arranged in such a way that the at least one pressure sensor can detect the pressure within the process chamber and can output an output signal corresponding to the pressure, and at least one evaluating unit. The evaluating unit is capable of tracking an output signal of the pressure sensor over a time period and identifying an ignition or an extinguishing of a plasma on the basis of at least one sudden change in the output signal of the pressure sensor.
The invention relates to a measurement object (12) for use in a heating system for the thermal treatment of substrates, wherein the measurement object is the substrate to be treated or has in use an essentially known temperature relationship with the substrate to be treated, wherein the measurement object has a surface having at least one surface region which serves as a measurement surface for an optical temperature measurement and in which a structure (30) in the form of a plurality of recesses (35) is formed in order to influence the emissivity of the surface region.
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
G01J 5/52 - Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
F28F 13/18 - Arrangements for modifying heat transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflectingArrangements for modifying heat transfer, e.g. increasing, decreasing by surface treatment, e.g. polishing
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
20.
RETAINER, METHOD FOR PRODUCING SAME AND USE THEREOF
The invention relates to a retainer (10; 50) the surface of which is coated (12; 52) with silicon carbide, glass carbon or pyrolytic carbon, to methods for producing same and to the use of the retainer during plasma-assisted deposition from the gas phase.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
21.
SUBSTRATE HOLDER AND A DEVICE AND A METHOD FOR TREATING SUBSTRATES
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Reichart, Johann Georg
Kegel, Wilhelm
Kummer, Günther
Obst, Reinhold
Lerch, Wilfried
Abstract
A substrate holder comprising a plate element for receiving a substrate is described. The plate element has at least one depression in a first side of the plate element, and a multiplicity of spacers in the at least one depression, at least one opening which is flow-connected to the depression and is connectable to an external gas supply/extraction unit, at least one groove which radially surrounds the depression, at least one opening which is flow-connected to the groove and is connectable to an external gas supply/extraction unit, a circumferential web which radially surrounds the depression and lies between depression and groove, and circumferential bearing surfaces for the substrate, wherein a first circumferential bearing surface is formed at the top side of the web and radially surrounds the depression, such that a substrate bearing on the first bearing surface forms with the depression a closed chamber, and a second circumferential bearing surface, which radially surrounds the groove. Furthermore, a device and a method for treating substrates, more particularly semiconductor substrates, are described. The device comprises at least one substrate holder of the type described above which is arranged or can be received in a process chamber, and at least one radiation source arranged for emitting radiation into the process chamber. In the method, a substrate is taken up by suction on a first side of the substrate in a suction region, which radially surrounds a first process region at the first side of the substrate, in such a way that suction region and process region are separated, and a first gas atmosphere is applied to a second side of the substrate and a second gas atmosphere is applied to the first side of the substrate in the first process region, wherein the first and second gas atmospheres differ from one another.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
22.
DEVICE FOR DETERMINING THE TEMPERATURE OF A SUBSTRATE
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
HQ-DIELECTRICS GMBH (Germany)
Inventor
Rick, Hartmut
Lerch, Wilfried
Niess, Jürgen
Abstract
The invention relates to a device and to a method for determining the temperature of a substrate, in particular of a semiconductor wafer, during heating by means of at least one first radiation source. A determination of the temperature of the substrate is based on detecting first and second radiations, each composed of a temperature radiation of the substrate and different proportions of the radiation reflecting on the substrate from the first radiation source, and on a drive power of the at least one first radiation source and/or a radiation intensity thereof.
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Rohlfing, Franziska
Reize, Ralf
Benkart, Peter
Lerch, Wilfried
Schmid, Patrick
Abstract
A description is given of a method for the thermal treatment of silicon carbide substrates having at least one surface to be treated, wherein a multiplicity of silicon carbide substrates arranged in a treatment chamber and optionally at least one silicon-containing sacrificial substrate arranged in the treatment chamber are heated to a treatment temperature (T), and a silicon partial pressure adjacent to at least the surface of the silicon carbide substrate that is to be treated is increased by the outgassing of silicon from the at least one sacrificial substrate. In the method, the multiplicity of silicon carbide substrates are preferably arranged in a treatment chamber in such a way that the respective surfaces to be treated of the silicon carbide substrates lie opposite a surface containing at least silicon and the two opposite surfaces together with a ring element form a substantially closed chamber, thereby substantially promoting gas exchange between the treatment chamber and the chamber formed by the surfaces and the ring element during heating. The at least one optional sacrificial substrate is chosen such that at the treatment temperature (T) it outgases per unit area an amount of silicon that is the same as or greater than that of the surface of the silicon carbide substrates that are to be treated. Furthermore, a description is given of a device for the thermal treatment of silicon carbide substrates and a device for use as a sacrificial substrate in the above method, which has a carrier and a carrier cover that together form a closed receptacle space for receiving a wafer-type silicon carbide substrate, wherein at least the carrier cover is embodied as a silicon-containing sacrificial substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
24.
PROCESS ROLLER FOR RECEIVING AND GUIDING SUBSTRATES IN STRIP FORM IN VACUUM COATING INSTALLATIONS
The invention relates to a process roller for receiving and guiding substrates in strip form in vacuum coating installations comprising a heater located inside the process roller, in the form of an elongated radiant heater, and also a cylindrical lateral surface for receiving a substrate in strip form, the process roller being mounted rotatably about an axis of rotation in a vacuum process chamber. The invention is intended to provide a process roller wherein a particularly uniform temperature distribution can be achieved on the lateral surface thereof by simple means. The object is achieved by the process roller (2) being configured in a vacuum- tight manner, by the lateral surface (3) of the process roller (2) being connected in a vacuum-tight manner to two end caps (4, 5), which have a flattened, outwardly curved hemispherical form, the interior space of the process roller (2) being connected to a vacuum connection (6), and by the radiant heater (8) extending into the region of the end caps (4, 5).
A method for stabilizing the efficiency of at least one silicon solar cell comprising the following steps: Holding (16) the temperature of the at least one silicon solar cell within a temperature range having a lower temperature limit of 50 °C during a stabilization period, generating (18) excess minority charge carriers in the at least one silicon solar cell during the stabilization period by applying an electrical current (18) to the at least one silicon solar cell, laminating (14) the at least one silicon solar cell in a protective material, wherein holding (16) the temperature of the at least one silicon solar cell within the temperature range and applying the electrical current (18) to the at least one silicon solar cell are carried out during the lamination process step.
A solar cell (50; 70) having a multi-stage doping. (52a, 52b, 52c, 54; 72a, 72b, 72c) formed from a dopant of a first type, which doping comprises more heavily doped regions (52a, 5-2b, 52c; 72a, 72b, 72c) and more lightly doped regions (54) and at least one contact (56), arranged in the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c), for electrically contacting the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c), wherein the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c) are arranged such that they form a predefined structure, and the at least one contact (56) extends at least in sections beyond the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c) and covers a part of the more lightly doped' regions (54), and a method for producing said solar cell.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Graf, Ottmar
Hartmann, Andreas
Knöpfle, Daniel
Abstract
The invention provides an apparatus and a method for measuring a wafer-like substrate having at least three straight side edges, wherein two of the three edges run in a substantially parallel manner. The method involves detecting a first edge of the wafer-like substrate using a first sensor and a second sensor, wherein the first and second sensors are arranged at a distance from one another along a first axis and the linear measuring regions thereof run in a substantially parallel manner. A second edge of the wafer-like substrate is also detected using a third sensor and a fourth sensor, wherein the third and fourth sensors are arranged at a distance from one another along a second axis and the linear measuring regions thereof run in a substantially parallel manner. A third edge of the wafer-like substrate is furthermore detected using a fifth sensor which is arranged opposite the first and second sensors and is arranged on a third axis, wherein the linear measuring region thereof runs substantially parallel to the measuring regions of the first and second sensors, and wherein the first and second axes enclose a first angle and the second and third axes enclose a second angle. The position of the wafer-like substrate is then determined using the acquired data.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
28.
ASSEMBLY FOR FEEDING IN HF CURRENT FOR TUBULAR CATHODES
The invention relates to an assembly for feeding in HF current for rotatable tubular cathodes (1) in a vacuum chamber (4) of a plasma coating system, and a high-frequency current source (14) and a magnet assembly (7) located within the tubular cathode (1) and extending along the tubular cathode for producing a magnetic field (6). The aim of the invention is to create an assembly for feeding in HF current for tubular cathodes that enables a low-loss feed-in of the HF current in such a manner that especially homogeneous sputter removal from the tubular cathode is guaranteed. Said aim is achieved in that the HF current source (14) is coupled to the tubular cathode (1) within the vacuum chamber (4) by means of a capacitive HF feed-in (9) in the form of a coupling capacitor (18). The coupling capacitor (18) of the HF feed-in (9) comprises a part of the surface of the tubular cathode (1) and a metal plate or metal film (10), which surrounds the tubular cathode (1) at least partially at a specified distance.
The invention relates to a device and a method for applying a voltage to a plurality of silicon rods in a CVD reactor. In each case, a series circuit, in which the silicon rods can be used as resistors, at least one first, at least one second and least one third power supply unit and at least one short-circuit device are provided. The short-circuit unit can be controlled in a suitable way to connect the outer ends of the series circuit to one another and to ground. At least one control unit for controlling the first, second and third power supply units and the short-circuit device is also provided, wherein the first power supply unit has a plurality of first transformers, the outputs of which are each connected to at least one silicon rod in the series, wherein the second power supply unit has a plurality of second transformers, the outputs of which are each connected to at least the same number of silicon rods as the first transformers in the series, specifically in parallel with one or more of the first transformers, and wherein the third power supply unit has outputs which are connected to the series of silicon rods, specifically in parallel with the first and second transformers. The short-circuit device has a line connecting the outer ends of the series circuit, in which line at least one resistor or a secondary side of a transformer and at least one switch are provided. The control unit is connected to at least one ammeter for measuring a current flow through the resistor or to a voltmeter for measuring a voltage on the primary side of the transformer.
H02M 5/12 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using transformers for conversion of voltage or current amplitude only
H02M 5/257 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
30.
DEVICE FOR DETERMINING THE TEMPERATURE OF A SUBSTRATE
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Reichel, Denise
Lerch, Wilfried
Gelpey, Jeff
Skorupa, Wolfgang
Schumann, Thomas
Abstract
The invention relates to a device 1 for determining the temperature of a semiconductor wafer during heating by at least one first radiation source. The device comprises a first grid structure 5, 16 with grid lines 18 that are impermeable to a substantial part of the radiation of said first radiation source, this grid structure being arranged between the first radiation source 8 and the substrate W, and the device also comprising a displacement unit for displacing said first grid structure. In addition, a first radiation detector 20 is provided, directed immediately to the surface of the substrate pointing towards the grid structure, as well as a device for determining the radiation that is emitted from the substrate as a result of its intrinsic temperature and for determining the temperature of the substrate based on radiation which has been detected by this first radiation detector.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In the case of a reactor for the deposition of silicon from the gas phase, having a reactor vessel having an interior surface which at least partially bounds a process space and a coating on at least part of the interior surface of the reactor vessel, a cost reduction in manufacture can be achieved by providing a coating which has a first layer which has been applied to at least an upper region of the interior surface of the reactor vessel and has a higher reflectivity for thermal radiation than the uncoated interior surface of the reactor vessel and a second layer which has been applied to a lower region of the interior surface of the reactor vessel and has a higher reflectivity for thermal radiation thaN the uncoated interior surface of the reactor vessel. The second layer is substantially thicker than the first layer. A process for producing the coating is likewise described. The reactor is nevertheless robust and has a long life.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
32.
Device for doping, deposition or oxidation of semiconductor material at low pressure
A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by a collar, which is attached to the process tube and against which a door rests sealingly.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23F 1/00 - Etching metallic material by chemical means
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
33.
METHOD FOR FORMING A LAYER ON A SUBSTRATE AT LOW TEMPERATURES
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Niess, Jürgen
Lerch, Wilfried
Kegel, Wilhelm
Gschwandtner, Alexander
Abstract
The invention relates to a method for forming an oxide layer on a substrate, in which a plasma is produced adjacently to at least one surface of the substrate. The plasma is generated by means of microwaves from an oxygen-containing gas, wherein the microwaves from at least one magnetron are coupled into the gas by means of at least one microwave rod facing the substrate, which comprises an outer conductor and an inner conductor. During the formation of the oxide layer, a mean microwave power density P = 0.8-10 W/cm2, a plasma duration t = 0.1 to 600 s, a pressure p = 2.67-266.64 Pa (20 to 2000 mTorr), and a distance between the substrate surface and the microwave rod d = 5-120 mm are set. The above mentioned process conditions and optionally additional process conditions are adapted to each other in such a manner that the substrate is kept at a temperature of less than 200°C and oxide growth is induced on the surface of the substrate facing the plasma.
C23C 8/36 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
A method and an apparatus for removing contaminants from metallurgical silicon are disclosed. In the method, metallurgical silicon is molten and subsequently introduced into a process chamber, wherein the molten silicon upon introduction into the process chamber is atomized via a gas flow. The thus atomized molten silicon subsequently falls to the floor of the process chamber. A reactive atmosphere is generated in the process chamber, wherein the reactive atmosphere contains a process gas, which reacts with contaminants in the molten silicon, in order to remove containments from the molten silicon. The apparatus comprises a melting unit connected via a conduit to a process chamber. Furthermore, a gas circulation unit is provided for circulating gas evacuated from the process chamber through a gas conditioning unit for cleaning the gas and then back into the process chamber via a gas inlet, which is used for atomizing molten silicon exiting the conduit between the melting unit and the process chamber.
A method for generating particles of metallurgical silicon comprises the following steps: melting metallurgical silicon or silicon having specific additives, having for example an amount of copper between 0.01 to 2% by weight; introducing the molten silicon in a process chamber, wherein upon introduction into the process chamber the molten silicon is atomized via a gas flow and subsequently falls to the floor of the process chamber or a collection container attached thereto, wherein the process conditions in the process chamber, in particular the gas flow for atomizing the silicon or the alloy is adjusted or controlled, such that the atomized silicon at least partially solidifies during the free fall and in substance spherical silicon particles having a mean particle size of 20 μιη to 425 pm are generated.
B01J 2/04 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by dividing the liquid material into drops, e.g. by spraying, and solidifying the drops in a gaseous medium
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Niess, Jürgen
Gschwandtner, Alexander
Lerch, Wilfried
Kegel, Wilhelm
Abstract
The invention relates to a method for solid phase crystallization of an amorphous or polycrystalline layer, in particular a silicon layer, on a substrate. The method includes heating the layer to a predetermined crystallization temperature and generating a microwave-induced plasma adjacent to the layer, in order to generate an electric field on the surface of the layer, and to stimulate a crystallization of the layer by means of said electric field.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Niess, Jürgen
Gschwandtner, Alexander
Kegel, Wilhelm
Lerch, Wilfried
Abstract
A method for forming a layer on a semiconductor substrate is described, wherein the semiconductor substrate is heated to a predefined process temperature above 500°C, a process gas is directed onto a surface of the semiconductor substrate and a plasma is produced adjacent to at least one surface of the semiconductor substrate.
The invention relates to a barrier and to a continuous annealing furnace comprising a barrier. The barrier (10) comprises at least a frame (36, 37), a actuating element (18), a gate (12), a first lever (14) being pivoted at said frame (36, 37) on a first rotational axis (20) and a second lever (16) being pivoted at said frame (36, 37) on a second rotational axis (21). Said gate (12) and said actuating element (18) are hinged at said first lever (14) opposite said first rotational axis (20) as well as said gate (12). and said actuating element (18) are hinged at said second lever (16) opposite said second rotational axis (21) for moving said gate (12) in a moving direction (68) by actuating said actuating element (18). In accordance with the invention said first and second lever (14, 16) are arranged axially symmetrical in respect to said moving direction (68) at said frame (36, 37). The continuous annealing furnace (26) comprises at least two muffles (28, 30) being connected by an intermediate module (32). Said intermediated module comprises said barrier (10) for isolating a gap (34) constructed in said intermediate module (32).
F27D 1/18 - Door framesDoors, lids or removable covers
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-track typeFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-chamber typeCombinations of furnaces
F27B 17/00 - Furnaces of a kind not covered by any of groups
F27B 5/02 - Muffle furnacesRetort furnacesOther furnaces in which the charge is held completely isolated of multiple-chamber type
F16K 3/00 - Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
The invention is related to a gas supply (30) for a processing furnace (6) with a plurality of gas inlets (32a-d) each opening into an inflow canal (34a-d) which opens into a furnace chamber (12) of the processing furnace (6). It is proposed that the plurality of gas inlets (32a-d) are furnished with different inlet cross sections and the plurality of inflow canals (34a-d) are furnished with different inflow cross sections opening into the furnace chamber (12).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
40.
COOLING MODULE AND APPARATUS FOR THERMALLY TREATING SUBSTRATES
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Elser, Hans-Peter
Tumback, Matthias
Lenz, Reinhard
Vogt, Moritz
Abstract
A cooling module for cooling substrates, in particular solar cells having a paste printed thereon after passing through a heating module is described. The cooling module comprises an elongated cooling chamber having an inlet opening, which is adjacent to a heating module, and an outlet opening, as well as a transport unit for transporting substrates through the elongated cooling chamber, wherein the transport unit defines a transport plane for the substrates. At least one first cooling unit is provided. The cooling unit has a plurality of first plate elements, which are arranged in substance perpendicular to and above the transport plane in the cooling chamber, at least one first conduit which extends through the first plate elements and is in a thermally conducting relationship therewith, and at least one conveying unit for conveying a cooling fluid through the first conduit. A conveying unit for conveying gas, in particular air, via spaces between the plate elements towards the transport plane is also provided.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
41.
SOLAR CELL HAVING A DIELECTRIC REAR FACE COATING AND METHOD FOR PRODUCING SAME
The invention relates to a solar cell (11; 21; 31) comprising a dielectric coating (4) which is disposed on a rear face of the solar cell (11; 21; 31) and is covered at least partially by at least one flat contact (12; 22; 32), wherein a boundary line (14; 24; 34) of the at least one flat contact (12; 22; 32) has at least one recess (16a, 16b; 26a, 26b, 26c). The invention also relates to a method for producing same.
The invention relates to a method for producing a silicon solar cell which is smoothly etched on one side, in which a front and rear side of a silicon substrate are etched (10) to form a smooth texture, a dielectric coating is then applied onto the rear side of the silicon substrate (14, 16), and the front side of the silicon substrate is subsequently textured (20) by means of a texture etching medium. According to the invention, the dielectric coating formed on the rear side of the silicon substrate is used as an etching mask against the texture etching medium.
H01L 31/052 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
The application describes an apparatus and a method for the thermal treatment of substrates, in particular thin film substrates for photovoltaic applications. The apparatus comprises at least one substrate carrier for supporting a substrate, a heating unit having at least one heating element for heating a substrate located on the substrate carrier and at least one heating element carrier for supporting the at least one heating element. The heating element carrier is designed to allow a local change in distance between the substrate carrier and the heating element, so as to be able to provide locally different heating intensities. In the method such a change in distance is carried out during the thermal treatment.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
44.
APPARATUS FOR PRODUCING MULTILAYER SYSTEMS ON TAPE-LIKE SUBSTRATES
The invention relates to an apparatus for producing multilayer systems on tape-like substrates in a process chamber in which at least one layer-forming device is located, where the tape-like substrate is taken off from an unwinder and is conveyed over various rollers and finally to a winder. The invention is intended to provide an apparatus for producing multilayer systems and/or layers having a large thickness on tape-like substrates, which operates effectively and allows the production of such multilayer systems having good quality. This is achieved by at least one hollow process roller (2) in which there is a slit-like opening (6) being arranged with the layer-forming devices (5, 5', 5'') in the process chamber (1), by an unwinder (3) and a winder (3') for the tape-like substrate (4) being arranged in a rotatable manner next to one another in the process roller (2) and by the tape-like substrate (4) being conveyed from the unwinder (3) through the opening (6) via the outer surface of the process roller (2) and back through the opening (6) to the winder (3').
C23C 14/54 - Controlling or regulating the coating process
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
45.
METHOD FOR PRODUCING A SOLAR CELL COMPRISING A SELECTIVE EMITTER, AND SOLAR CELL
A method for producing a solar cell comprising a selective emitter (58, 60), in which a first glass layer containing dopant of a first type is formed (12) on at least part of a surface of a solar cell substrate (50), a weakly doped emitter (58) is formed (12) in regions of the solar cell substrate (50) that are covered by the first glass layer by diffusion of dopant from the glass layer into the solar cell substrate, the first glass layer is removed (14), after the removal (14) of the first glass layer a second glass layer (52) containing dopant of the first type is formed (16) on at least a partial region of the weakly doped emitter (58) and additional dopant of the first type is diffused from the second glass layer (52) into the solar cell substrate (50) locally in regions of the solar cell substrate (50) that are covered by the second glass layer (52) by local heating (18) of the solar cell substrate (50), and in this way strongly doped emitter regions (60) are formed (18), and a solar cell.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
A crucible for silicon is disclosed, comprising a bottom and at least eight outer side wall sections, which confine a receiving space having an octagonal cross-section. Furthermore, a crucible arrangement for silicon is disclosed, which comprises the above described crucible and an inner side wall element centered with respect to the receiving space, such as to form an annular space, together with the outer side wall sections. Additionally, an optional partition unit for a crucible for silicon is also de- scribed, wherein the partition unit comprises at least one partition element fitted to the shape of the receiving space/annular space, in order to separate the receiving space/annular space into at least two compartments.
A CVD reactor/gas converter, a process for vapor deposition or gas conversion and an electrode unit are described. The CVD reactor/gas converter comprises a casing, which forms a process chamber inside and comprises one casing wall having at least two feedthroughs. At least one pair of first electrode units spaced with respect to each other, which comprise at least one contact part located in the process chamber and a connection part extending through a corresponding feedthrough in the casing wall, as well as at least one pair of spaced second electrode units completely located inside the casing are provided. An electrically conductive bridge element connects the pair of second electrode units inside the casing. In the method for vapor deposition or gas conversion, a plurality of rods and connection elements or of rod pairs connected to each other is positioned in a process chamber in such a way that two first electrode units are electrically serially connected via the rods and the connection elements or via the rod pairs and at least one pair of the second electrode units. A desired gas atmosphere is adjusted inside the process chamber, and a voltage is applied to the two first electrode units, so as to achieve a current flow through the rods and connection elements or through the rod pairs. The electrode unit is provided for use in a CVD reactor/gas converter having a casing, which forms a process chamber inside and comprises a casing wall having at least one feedthrough. The electrode unit comprises an electrically conductive contact part, an electrically conductive connection part connected to the contact part and an electrically conductive plate element having a diameter, which is larger than the diameter of the feedthroughs. The plate element is fixable to the casing wall comprising the feedthroughs from the outside in such a way, that the plate element seals a corresponding feedthrough and directly or indirectly supports the connection part of the electrode unit in an electrically conductive manner.
C23C 16/08 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
The invention relates to a method and a device for producing silicon, in particular a method and a device for producing a silicon ingot. In the method for producing silicon, the following steps are provided: introducing a processing gas containing silanes into a processing chamber; heating at least one first actively heatable element that lies within the processing chamber by means of resistance heating or a heating element that lies within the first element to a first temperature that lies in a temperature range in which silicon is deposited on the at least one element from the processing gas in order to form a silicon layer on said element; heating at least one second passively heatable element that lies adjacent to the at least one first element within the processing chamber by means of the at least one first element to a first temperature that lies in a temperature range in which silicon is deposited on the at least one second element from the processing gas in order to form a silicon layer on said second element; subsequently heating the at least one first element, the at least one second element, and/or the silicon layers that are formed on said elements to a second higher temperature that lies in a temperature range in which the silicon layer at least partially melts and flows out from the at least one first and second element in liquid form; and collecting the liquid silicon. The device for producing silicon has the following: at least one first processing chamber; at least one first actively heatable element that lies in the processing chamber; at least one controllable heating device that is suitable for actively heating the at least one first element by means of resistance heating or a heating unit that lies within the first element to first and/or second temperatures, wherein the first temperature lies in a temperature range in which silicon can be deposited on the at least one element from a processing gas containing silanes in order to form a silicon layer on said element, and the second temperature lies in a temperature range in which a silicon layer that is formed on the at least one element at least partially melts and flows out from the at least one element in liquid form; at least one second passively heatable element that lies adjacent to the at least one first element in the processing chamber, said second element being heatable by the first element to the first and/or second temperature; and at least one arrangement for the controlled collection and/or discharge of liquid silicon that flows out from the at least one element.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
Continuous furnace for the thermal conversion of a metallic precursor layer arranged on a substrate (3) in a gas flow, in particular for the conversion of a precursor layer into a CIGSS layer, with a continuous tunnel, comprising a plurality of successive segments (5, 6, 7, 8, 9), wherein the cross-section of the tunnel in a middle segment (6, 7) is smaller than in a segment (5, 8, 9) adjacent the middle segment.
Process for the condensation of chalcogen vapour (36) and re¬ circulation of condensed chalcogen (23) into an evaporation unit (1) having the process steps of the feeding of the chal- cogen vapour (36) in the condenser (9), of the condensing of at least part of the chalcogen vapour (36) fed into the con¬ denser (9) into liquid chalcogen (23), of the recirculation of the liquid chalcogen (23) into the evaporation unit (1) via a trap (35) formed as part of a return line (17) and of the pro- vision of a column (21) of liquid chalcogen in the trap (35), of the equalisation of pressure differentials between pres¬ sures prevailing in the condenser (9) and in the evaporation unit (1) by means of this column (21) of liquid chalcogen, of the at least partial melting of a solid chalcogen stopper (22) sealing off the trap (35), and of the control of the flow of liquid chalcogen (23) through the trap (35) by means of a melt valve (24), and apparatus to carry out this process.
The invention relates to a method for locally removing a surface layer (36) which is applied to a texture (30) of a textured substrate, wherein the texture (30) has a multiplicity of structure elements (32) with structure tips (34) and/or structure edges, having the steps of locally irradiating the texture (30) through the surface layer (36) by means of laser radiation which at least partially penetrates through the surface layer (36) and which is at least partially absorbed by the texture (30), the intensity of which laser radiation is set such that the texture (30) is locally melted by means of the laser radiation and subsequently recrystallized (16), wherein the surface layer (36) is locally opened in the region of the structure tips (34) and/or of the structure edges such that the openings around the structure tips (34) and/or the structure edges after the local irradiation of the texture (30) are completely surrounded by continuous, non-open regions of the surface layer (36), and removing (18) the recrystallized regions (38) of the texture (30) in an etching step by means of an etching medium, wherein the surface layer (36) outside the recrystallized regions (38) is used as an etching mask against the etching medium, and to a solar cell (70).
Method for producing a solar cell with a selective emitter comprising the steps of forming (10, 12, 14) a dopant-containing glass layer (55) on at least one part of a surface of a solar cell substrate (50), forming (16) a weakly doped emitter (58) in regions of the solar cell substrate (50) that are covered by the glass layer (55) by indiffusing (16) dopant from the glass layer (55) into the solar cell substrate (50), locally indiffusing (18) additional dopant from the glass layer (55) into the solar cell substrate (50) by locally heating (18) regions of the solar cell substrate (50) that are located below the glass layer (55) for the purpose of locally forming (18) heavily doped emitter regions (60), wherein, as dopant-containing glass layer (55), such a glass layer (55) is formed (10, 12, 14) on the at least one part of the surface of the solar cell substrate (50), which glass layer has a lower dopant concentration in a first partial layer (52) of the glass layer (55), said first partial layer being located nearer the surface of the solar cell substrate (50), than in a second partial layer (54) of the glass layer (55), said second partial layer being located further away from the surface of the solar cell substrate (50).
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Völk, Peter
Abstract
An apparatus for blocking and unblocking a loading/unloading opening of at least one process chamber for treating substrates as well as an apparatus for treating substrates including a corresponding closing apparatus are described. The closing apparatus comprises at least one tube element having at least one inlet and/or outlet opening connectable to a fluid source and/or a vacuum source, and a casing having a chamber axially extending in the casing for housing the tube element, and a passage intersecting the chamber laterally to the axial direction, wherein the passage is aligned with the loading/unloading opening of the process chamber and wherein the chamber has a circular cross-sectional area. Furthermore, at least one fixing element for positioning and fixing a section of the tube element in a predetermined position with respect to the loading/unloading opening of the process chamber is provided. The tube element may be moved between an expanded or deployed condition and a retracted condition retracted towards the fixed section via selectively applying fluid and/or vacuum to the inner space of the tube element, wherein the tube element blocks the loading/unloading opening of the process chamber in the deployed condition and unblocks the loading/unloading opening of the process chamber in the retracted condition. The apparatus for treating a substrate comprises at least one process chamber having a loading/unloading opening and a closing apparatus of the above type.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
54.
METHOD AND APPARATUS FOR IGNITING SILICON RODS OUTSIDE A CVD-REACTOR
A method and a device for igniting silicon rods outside a CVD-reactor for preparing silicon rods for subsequent processing in a CVD-reactor are described. In the method, a silicon rod is disposed inside an ignition device, and a first voltage is applied to the silicon rod by means of a first power supply unit, wherein the voltage is sufficient to ignite the silicon rod. Optionally, the silicon rod may be heated by means of a current flow and/or by means of an external heating unit to a temperature within a predetermined temperature range, thereafter. The silicon rod is removed from the ignition device and may be exposed to a depositing process inside a CVD-reactor, thereafter. The ignition of the silicon rod outside the CVD-reactor facilitates a new ignition for the depositing process. The device comprises a casing having a chamber for receiving at least one silicon rod. In the chamber, at least one pair of contact electrodes is arranged, in order to hold at least one silicon rod therebetween. Furthermore, a first power supply unit having at least one transformer is provided, wherein each output of the transformer is connected to one contacting electrode of a pair, respectively. The transformer comprises an open circuit voltage which is sufficiently high, in order to initialize a current flow in the silicon rod.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
H02M 5/22 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
G05D 23/19 - Control of temperature characterised by the use of electric means
H02M 5/12 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using transformers for conversion of voltage or current amplitude only
H02M 5/25 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Graf, Ottmar
Abstract
The application describes a vacuum suction unit for a gripper for holding a disk-shaped substrate, the vacuum suction unit comprising a base body, a nozzle body having a suction nozzle, and a substrate contact element. The nozzle body and/or the substrate contact element is/are movable with respect to the base body, and the nozzle body comprises a receptacle, which is con¬ structed in such a way that the substrate contact element, after being received in the receptacle, radially surrounds the suction nozzle and protrudes over the suction nozzle in an axial direction. Furthermore, a gripper for holding a disk- shaped substrate is described, wherein the gripper comprises a base body, a first vacuum suction unit having a first substrate contact element movable with respect to the base body, and also at least one second vacuum suction unit having a second substrate contact element. The first and second vacuum suction units are arranged in such a way that the first and second substrate contact elements are located in one plane and are able to contact a disk-shaped and preferably planar substrate to be supported at the same time and on the same substrate side. Furthermore, means for applying a vacuum to the vacuum suction units are provided, the means being adapted to independently apply vacuum to the vacuum suction units. Also, a method for loading a wafer boat is described, wherein a wafer is sucked to a wafer gripper by at least one first and one second vacuum suction unit via vacuum, wherein a substrate contact element of the first vacuum suction unit is movable with respect to the wafer gripper. After this, the wafer gripper is moved into a receiving slot between plates of the wafer boat, and thereafter, the vacuum at the second vacuum suction unit is released, such that the wafer is supported only by the first vacuum suction unit. Now, the wafer is moved into receptacles of the wafer boat, wherein the substrate contact element carries out a lateral or rotational movement when the wafer contacts one or more of the receptacles. Thereafter, the vacuum at the first vacuum suction unit is released.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
56.
METHOD AND APPARATUS FOR CALIBRATING A WAFER TRANSPORT ROBOT
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Knöpfle, Daniel
Hartmann, Andreas
Graf, Ottmar
Abstract
The application describes a method for calibrating a wafer transport robot as well as a method and an apparatus for loading/unloading a wafer boat, the wafer boat having a plurality of plates, which are arranged generally parallel to each other in an opposed manner and a plurality of receptacles for receiving the wafers between adjacent plates. The wafer transport robot comprises a wafer gripper which is adapted to insert a wafer into the receptacles between the plates and to remove the wafer therefrom. In one method, the wafer gripper is moved to at least one position, which corresponds approximately to a theoretical loading position, and the spatial position of the wafer gripper is automatically determined in this position. Based on a difference between the determined spatial position of the wafer gripper and the theoretical loading position, at least one correction or compensation parameter for positioning the wafer gripper is determined. In an alternative process, a predetermined point of the wafer gripper, e.g. the center point thereof, is moved to different positions within a theoretical loading zone for a wafer boat by use of a robot coordinate system, and a corresponding spatial position of the wafer gripper is determined in these positions. The corresponding coordinate data of the robot coordinate system are stored in relation to the corresponding determined spatial position of the wafer gripper. For loading/unloading a wafer boat, the wafer boat is measured by use of the same measuring system which was used for determining the spatial position of the wafer gripper for a calibration. The measuring system comprises at least three sensors which are movable along predetermined movement paths, and which are able to measure a distance between the sensor and an edge region of an element entering the measuring range of the sensor along a measuring direction.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
57.
PROCESS AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOTS
The present application describes a process and apparatus for producing polycrystalline silicon ingots. During the process, a crucible is arranged in a process chamber, wherein the crucible is filled with solid silicon material or is being filled with silicon material in the process chamber. The crucible is located with respect to at least one diagonal heater in such a way that the diagonal heater is located laterally offset to and generally above the silicon ingot to be produced. Thereafter, the solid silicon material in the crucible is heated above the melting temperature of the silicon material in order to form molten silicon in the crucible, and thereafter, the silicon material in the crucible is cooled down below the solidification temperature of the molten silicon, therein a temperature profile in the silicon material during the cooling phase is controlled at least partially via the at least one diagonal heater. The apparatus comprises a process chamber, a crucible holder inside the process chamber, and at least one diagonal heater in the process chamber. The diagonal heater is located laterally with respect to the crucible holder and extends generally perpendicular thereto and is spaced from the crucible holder in a vertical direction at such a distance that the diagonal heater is located generally above a polycrystalline silicon ingot to be formed in the crucible. The diagonal heater is stationary with respect to the crucible holder when the process chamber is closed.
The invention relates to a device and method for producing a polycrystalline silicon block in a melting crucible which is disposed in a process chamber and filled with silicon material. The silicon material is melted in the melting crucible in order to form a silicon melt and is then cooled to below the solidification temperature of the silicon. During a section of the process, a plate element which is located in the process chamber and has a through-opening can be disposed above the silicon melt and cooled in the melting crucible to below the solidification temperature of the silicon melt; and a gas flow can be directed at least partially via the at least one through-opening in the plate element onto the surface the silicon melt. Alternatively, a method and a melting crucible arrangement consisting of a melting crucible and a retaining ring are described. The retaining ring can be placed on or above a melting crucible filled with silicon material, such that additional silicon material can be received in the retaining ring such that the additional silicon material is retained above the melting crucible by the retaining ring. During heating of the silicon material in the melting crucible and of the additional silicon material in the retaining ring, a silicon melt is formed in the melting crucible and can then be cooled to below the solidification temperature of the silicon.
C30B 11/04 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
An apparatus and a method for applying a voltage across a plurality of silicon rods (51-54) in a CVD reactor and a CVD reactor are described. The apparatus has a series connection in which the silicon rods may be inserted as resistors, at least one first power supply unit (12), at least one second power supply unit (14), at least one third power supply unit (16), and at least one control unit which is capable of applying a voltage across the silicon rods in the series connection via the first, the second or the third power supply unit. The first power supply unit has a plurality of first transformers (21-24), the outputs of which are each connected with one silicon rod in the series connection and wherein the first transformers have a first open circuit voltage and a first short circuit current. The second power supply unit has a plurality of second transformers (31-32), the outputs of which are connected to the same number of silicon rods as the first transformers in the series connection, in parallel to one or more of the first transformers and wherein the second transformers have a second open circuit voltage and a second short circuit current, wherein the second open circuit voltage is lower than the first open circuit voltage and the second short circuit current is higher than the first short circuit current. The third power supply unit has outputs which are connected with the silicon rods in the series connection in parallel to the first and second transformers and wherein the third power supply unit is capable of providing a current in a voltage range which is below the open circuit voltage of the second transformer, which current is higher than the short circuit current of the second transformer.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
60.
PROCESS FOR THE PRODUCTION OF A COMPOUND SEMICONDUCTOR LAYER
Process for the production of a I-III-VI-compo.und semiconductor layer (80), in which a substrate (50) is provided (10, 12) with a coating (63) which has a metallic precursor layer (57), the coating (63) is heated and kept for the duration of a process time at temperatures of at least 350 °C (16) and the metallic precursor layer (57) is thereby converted (16), in the presence of a chalcogen (58; 72), into the compound semiconductor layer (80) while areal contact is provided (14; 24) between a preponderant proportion (15a) of a free surface (15a, 15b; 25) of the coating (63) and a cover (60; 70) during at least part of the process time.
H01L 21/36 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C23C 8/00 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
61.
APPARATUS AND METHOD FOR DETERMINING THE LOCATION OF PLATE ELEMENTS OF A WAFER BOAT
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Knöpfle, Daniel
Hartmann, Andreas
Graf, Ottmar
Abstract
An apparatus and a method for determining the location of plate elements of a wafer boat having a plurality of plate elements that are arranged substantially parallel to each other and each have top and bottom edges is described. In the method the wafer boat is arranged in a predetermined orientation and then at least three sensors, each directed at a top or bottom edge of a plate element, are moved along predetermined travel paths perpendicular to the plate elements, wherein at least a first travel path is above, at least a second travel path is below the wafer boat and at third travel path is laterally spaced from the first or second travel paths above or below the wafer boat. During this movement the position of the sensors along a respective travel path is determined continuously, and it is determined, in which position a respective plate element enters the measuring area of a sensor and exits the same. Additionally a respective distance between a sensor and an edge of a plate element is measured and the location of a respective plate element is determined by means of the sensor signals. The apparatus comprises the required elements for performing the method above. Furthermore an apparatus and a method for loading and/or unloading a wafer boat are described.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An electrode arrangement for use in a CVD-reactor/converter and CVD-reactors/converters are described. The electrode arrangement has a shaft portion of an electrically conducting material, a head portion of an electrically conducting material, which is connected to the shaft portion in an electrically conducting manner, which head portion has a seal surface axially facing towards the shaft portion and a biasing unit. The biasing unit has at least one elastic element and an adjustment unit which may be coupled to the shaft portion, wherein the adjustment unit comprises adjustment means which are capable of compressing the elastic element between two counter surfaces, such that a restoring force of the elastic element acts in an axial direction of the shaft portion, in order to bias the axially facing seal surface at the head portion against a counter seal surface. The CVD-reactor/converter has a process chamber defining a process space, the process chamber comprising at least one through opening in its floor in which an electrode arrangement is received, such that the head portion is at least partially received in the process space, and the shaft portion is at least partially received in the through opening and is arranged outside the process space. The electrode arrangement may be of the above described type or of the type having a shaft portion of a first, electrically conducting material and a head portion of a second, electrically conducting material, wherein the head portion is completely made from the second electrically conducting material, which differs from the first material and which does not negatively influence the process within the CVD-reactor/converter, and wherein the head portion is removably attached in an electrically conducting manner on a first end of the shaft portion.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Keim, Uwe
Völk, Peter
Abstract
An apparatus for thermally treating substrates, in particular semiconductor substrates is described. The apparatus comprises a processing tube for receiving a plurality of semiconductor substrates and a resistance heating element radially encompassing the processing tube. The resistance heating element is made of a material which is free of metal. By providing a material which is free of metal for the resistance heating element, the danger of diffusion of metals into the processing space within the processing tube may be obviated.
The invention relates to a method for doping a semiconductor substrate (50), wherein the semiconductor substrate (50) is heated by irradiation (14) with laser radiation (60) and at the same time dopant from a dopant source (54) is diffused (16) into the semiconductor substrate (50) in heated regions (52), and wherein when the semiconductor substrate (50) is heated by the irradiation (14) with laser radiation (60), a surface portion of the semiconductor substrate (50) that is less than 10% of the total surface of all irradiated regions (62) is melted (18) and recrystallized (20). The invention further relates to a solar cell.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
The invention relates to a method for producing a solar cell (70), wherein a layer stack (74, 76) of dielectric layers (74, 76) is applied (14, 16; 54, 56) to a back of a solar cell substrate (72) and the layer stack (74, 75) is heated and is held (20) at temperatures of at least 700°C during a time period of at least 5 minutes. The invention further relates to a solar cell (70).
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/052 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
66.
METHOD FOR HYDROGENATING CHLOROSILANES AND CONVERTER FOR CARRYING OUT THE METHOD
The invention relates to a method for hydrogenating chlorosilanes, wherein a gas mixture (50) comprising a chlorosilane gas to be hydrogenated and hydrogen gas is heated in a reactor (3a, 3b, 3c; 13a; 23a) to temperatures in the range between 500 °C and 1800 °C and in this way the chlorosilane gas is at least partially hydrogenated, and wherein for the purpose of heating the gas mixture (50) the reactor (3a, 3b, 3c; 13a; 23a) is heated by means of at least one flame, which is arranged in the surroundings of the reactor (3a, 3b, 3c; 13a; 23a), and to a converter (1) for carrying out the method.
The invention relates to a method for creating a two-stage doping in a semiconductor substrate (80), wherein in a doping area (89) to be provided with the two-stage doping (90, 92), dopant is diffused into the semiconductor substrate (80) by means of heavy diffusion (10) and in this way a high surface concentration of dopant is created, and after the heavy diffusion (10) the semiconductor substrate (80) is locally heated (12) in areas (91) of the two-stage doping (90, 92) to be doped more heavily and an oxide layer (88) is created (16) on the doping area (89).
Method for producing a I-III-VI compound semiconductor layer (20), wherein a substrate (6) is provided (80) with a coating (18, 19) which has a metallic precursor layer (18); the coat- ing (18, 19) is kept, for the duration of a process time (tp), at temperatures of at least 350°C (84) and the metallic precursor layer (18), in the presence of a chalcogen (19) at an ambient pressure of between 500 mbar and 1500 mbar, is converted (84) into the compound semiconductor layer (20), and the coating (18, 19, 20) is kept at temperatures (86) for the duration of an activation time (tg) which attain at least an activation barrier temperature (Tg), whereby as activation barrier temperature (Tg) a value of at least 6000C is selected (86).
CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG (Germany)
Inventor
Rade, Claus
Piechulla, Alexander
Scherer, Robert
Abstract
The invention relates to a connector (1) for gas or liquid lines, comprising a core piece (3) having a core (5), a sleeve piece (7) having a sleeve (9), and a pressure chamber (10) that surrounds the core (5) and the sleeve (9) in the connected state, in which pressure chamber an overpressure can be developed relative to a line chamber (4) of the connector (1), and use of the connector.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
F27D 7/02 - Supplying steam, vapour, gases or liquids
70.
METHOD FOR MEASURING THE CONVERSION RATE DURING THE REACTION OF SILICON TETRACHLORIDE WITH HYDROGEN TO FORM TRICHLOROSILANE AND HYDROGEN CHLORIDE
The invention is related to a method for measuring the conversion rate of a reaction during the conversion of Silicon tetraxchloride with hydrogen to trichlorsilan and hydrogenchloride in a conversion reactor. It is an object of the invention to develop a method for measuring the conversion rate with a method which can be easily operated, requiring a low machine-aided effort and which is low failure and accident-sensitive. The method operates by measuring the amount of the reaction product hydrogenchloride formed during the conversion in the reactor by discharging a given sample of the reaction product hydrogenchloride from the gas mixture leaving the reactor in a given amount of a sample liquid and subsequent measuring of the pH value of the resulting aqueous Solution of the hydrogenchloride.
A clamping and contacting device for mounting and electrically contacting thin silicon rods in silicon deposition reactors is disclosed, the clamping and contacting device having a rod holder for receiving one end of a thin silicon rod. The rod holder comprises at least three contact elements disposed around a receiving space for the thin silicon rod. Each of the contact elements forms a contact surface facing towards a receiving space for electrically and mechanically contacts the thin silicon rod, wherein the contact surfaces of adjacent contact elements are spaced apart.
The present invention concerns a process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers with a recovery of chalcogen, as well as a device for carrying out the process. The aim of the invention is to provide a rapid and readily executable process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers, as well as a device suitable for carrying out the process with as small as possible primary consumption of chalcogens. This is achieved by heating substrates in a furnace at approximately atmospheric pressure to a final temperature in the range 400°C to 6000C and transforming them into semiconducting layers in an atmosphere formed from a mixture of at least one carrier gas and chalcogen vapour, wherein chalcogen vapour not consumed in the reaction is made available to the process again via exhaust gas recirculation.
The present invention relates to a process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers with a recovery of chalcogen, as well as a device for carrying out the process. The aim of the invention is to provide a rapid and readily executable process for the thermal conversion of metallic precursor layers, as well as a device suitable for carrying out the process with as small as possible primary consumption of chalcogens..This is achieved by forming an inlet-side and outlet-side gas lock (4.1, 4.2, 4.3, 4.4) for closing a furnace chamber (1) in an oxygen-tight manner, introducing one or more substrates (6) prepared with at least one metallic precursor layer into the furnace chamber (1), introducing a chalcogen vapour /carrier gas mixture (10) above the substrates (6) at a pressure close to atmospheric pressure, said mixture being distributed as uniformly as possible over the width of the substrates (6), heating the substrates (6) in the chalcogen vapour/carrier gas atmosphere (10) to a final temperature with the metallic precursor layers being transformed into semiconducting layers, removing the chalcogen vapour that has not been consumed in the reaction, cooling the substrates (6) and removing the latter from the furnace chamber (1). It is advantageous to heat the substrates (6) in a protective gas atmosphere to a temperature at which as far as possible no condensation of chalcogens can take place.
The invention relates to a method and a device for coating planar substrates with chalcogens in the form of thin layers. The invention is intended to provide a fast and cost-effective coating of planar substrates with chalcogens, with a controlled and safe removal of the uncondensed chalcogen and a device suitable for carrying out the method. This is achieved by forming an inlet side and outlet side gas lock (6, 7) for the oxygen-tight closure of a process chamber (5), introducing one or more substrates to be coated, said substrates being temperature-regulated to a predetermined temperature, into the process chamber (5), introducing a chalcogen vapour/carrier gas mixture into the process chamber (5) which has a transport channel (4), above the substrates, forming a flow of the chalcogen vapour/carrier gas mixture through the transport channel (4) between the inlet side and outlet side gas locks (6, 7) and forming a chalcogen layer on the substrates by means of PVD during a predetermined dwell time and removing the chalcogen vapour which has not condensed onto the substrates together with the carrier gas between the gas locks, and removal of the substrates after the predetermined process time has elapsed.
CENTROTHERM THERMAL SOLUTIONS GMBH + CO. KG (Germany)
Inventor
Keim, Uwe
Hartung, Robert, Michael
Abstract
The invention concerns an assembly for gas tight sealing of OLED components comprising an OLED layer structure on a substrate and a covering glass plate as well as a solder at the rim area between. It is an object of the invention to realize a device for a fast and effective vacuum tight sealing of OLED devices with a low thermal load of the OLED devices. The invention is characterized by the fact that a chamber (1) which can be evacuated having an upper assembling opening (2) provided with a window (3) and with a substrate mount (5), which is movable from below against the window (3) to grout the OLED devices (6) which are preassembled positioned onto the mount (5), whereby a laser beam (14) of a laser beam welding device can be directed through the window (3) at the level between the substrate (7) and a covering glass plate (8).
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/02 - Positioning or observing the workpiece, e.g. with respect to the point of impactAligning, aiming or focusing the laser beam
B23K 26/12 - Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
76.
ARRANGEMENT AND METHOD FOR MEASUREMENT OF THE TEMPERATURE AND OF THE THICKNESS GROWTH OF SILICON RODS IN A SILICON DEPOSITION REACTOR
The invention relates to an arrangement for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor, by means of a pyrometer which is located outside the reactor. The aim of the invention is to provide an arrangement which allows continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process, with adequate accuracy. This is achieved in that a contactlessly operating temperature measurement device (4) is provided for the temperature measurement and is arranged outside the silicon deposition reactor in front of a viewing window (2), in that the temperature measurement device (4) can be pivoted horizontally about a rotation axis (5) by means of a rotating drive (9), wherein the pivoting axis (5) runs parallel to the longitudinal axis of the silicon rod (1), and wherein the centre axis (6) of the temperature measurement device runs through the pivoting axis (5).
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 11/08 - Measuring arrangements characterised by the use of optical techniques for measuring diameters
G01B 21/08 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
H01L 21/66 - Testing or measuring during manufacture or treatment
The invention relates to an in-line vacuum coating system comprising a vacuum chamber, a coating source and a substrate carrier for holding tubular substrates, said carrier being displaceable using the vacuum chamber. The invention provides a sure method of simply and securely coupling a fixed rotational drive unit to a carrier that can be displaced at a constant rate of speed in an in-line vacuum coating system. This is accomplished by way of a fixed splined shaft (10) that is rotatably installed and is connected to a rotational drive unit, and by way of a gear (11) that can be engaged with the splined shaft (10) and that is rotatably mounted on the carrier (6), said gear being longitudinally displaceable to a predefined extent in spring-loaded fashion in a direction opposite to the direction of travel (12) of the carrier (6).
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
B01J 3/00 - Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matterApparatus therefor
The invention, which relates to a method for supplying power to a CVD process in the deposition of silicon, is based on the problem of ensuring rapid and effective heating of the rod pairs at a clearly reduced expenditure, while avoiding complex parallel/serial switching. Said problem is solved in that the rod pairs are electrically connected in series, and each rod pair can be bridged at least partially by a means for electric bridging and the applied electric voltage is applied to at least one rod pair.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Oxidation and cleaning process for silicon wafers, in which the silicon wafers are provided with a silicon oxide layer on at least part of their surface (12; 24), before they are etched in an alkaline etching solution (14;, 26) and they are etched in a solution (16) which contains an acid which oxidises metallic impurities, whereby at least a portion of the silicon oxide layer is exposed unprotected to the etching solution and the acid, and in which the silicon wafers are rinsed in deionised water after the etching processes (18), whereby the at least one unprotected portion of the silicon oxide layer is at least partly left on the silicon wafers and the silicon wafers are dried (20) after rinsing (18; 32).
Method for manufacturing a solar cell with a two-stage doping (88, 89) including the following method steps of forming (14, 48) an oxide layer (82), which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate (80), of forming (16; 50) an opening in the oxide layer (82) in at least one high-doping region (88) by removing (16; 50) the oxide layer (82) in this high-doping region (88), of diffusing (28) the first dopant into the at least one high- doping region (88) of the solar cell substrate (80) through the opening and of diffusing (28) the first dopant into the solar cell substrate (80) through the oxide layer (82), wherein the diffusing-in (28) through the openings and through the oxide layer (82) takes place at the same time in a common diffusion step and the solar cell substrate (80) is diffused (28) in the common diffusion step (28) in an at least partially hydrophilic state.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
The invention relates to an arrangement and a method for phase-fired control. The aim of the invention is to provide a control of this type that allows costs and resources to be reduced in production and function control. To achieve this on the arrangement side, all controllable electric switching elements are linked by means of a common controller that has a first input for a first control signal. To achieve the aim on the method side, the set point value is pre-defined as a first input variable and assigned to means for controlling the controllable electric switching elements, the current flowing through each switching element is measured and transmitted to the means for controlling the switching elements as a respective second input variable, the current value of the voltage in the load is measured and transmitted to the means for controlling the switching elements as a third input variable, and said means for controlling the switching elements controls all switching elements in a targeted manner by means of the first, second and third input variable. A maximum of two switching elements are active at any one time.
A diffusion device (1; 28) for the production of solar cells comprises a first dopant source applicator {3) by means of which a dopant source (5) can be disposed on a substrate (7), a first continuous furnace (12) arranged downstream in the process direction (10) through which the substrates (7) can pass, by means of which dopant from the dopant source (5) can be diffused into the substrate (7), and a second continuous furnace (14; 44) arranged downstream of the first continuous furnace (12) in the process direction which is disposed such that a surface passivating layer is formed on the substrates (7) while they pass through the second continuous furnace (14; 44), and an etching device (16) disposed between the first (12) and the second (14; 44) continuous furnace which is arranged to at least partially remove layers formed at the surface of the substrates (7) during the passage through the first continuous furnace (12); and a process for producing solar cells (60).
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
83.
METHOD FOR PRODUCING A SOLAR CELL HAVING TWO-STAGE DOPING
A method for producing a solar cell having two-stage doping (20a, 20b; 34a, 34b; 44a, 44b), wherein a doping region (20; 28; 44) of a solar cell substrate (10; 11) is slightly doped (132) at least in some sections, a diffusion barrier (12; 16; 42) is configured (102; 122) in the doping region (20; 28; 44) on a surface of the solar cell substrate (10; 11), local openings (16; 30; 47) are introduced (104; 114; 134) into the diffusion barrier (12; 26; 42), and the solar cell substrate (10; 11) in regions of the local openings (16; 30; 47) is heavily doped (106; 136), wherein the diffusion barrier (12; 26; 42) is thermally grown or applied (102; 122) onto the surface of the solar cell substrate by means of chemical or physical deposition from a vapor phase.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CENTROTHERM THERMAL SOLUTIONS GMBH + CO. KG (Germany)
Inventor
Uwe, Keim
Hartung, Robert Michael
Abstract
The invention relates to a method and an arrangement for tempering SiC wafers. The invention is to provide a method and an arrangement for tempering SiC wafers for generating a sufficient silicon partial pressure in the processing chamber and while reducing the operating costs. This is achieved in that a source for at least vaporized or gaseous silicon to increase the silicon partial pressure is connected to the processing chamber (2) for receiving at least one wafer (3), wherein said source is a vaporizer (4) having liquefied silicon fragments (11), to which a carrier gas can be supplied, which generates a gas flow via a silicone melt, and the vaporizer (4) is connected via a pipeline (5) to the processing chamber (2) or is disposed therein.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
85.
METHOD AND APPARATUS FOR THERMALLY CONVERTING METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS, AND ALSO SOLAR MODULE
The present invention concerns a method for thermally converting metallic precursor layers on substrates into semiconducting layers, and also an apparatus for carrying out the method and for producing solar modules on substrates. The invention is based on the object of providing an accelerated and simple-to-realize fast method for thermally converting metallic layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency. This is achieved by virtue of the fact that the substrates (4) previously prepared at least with a metallic precursor layer (10) are heated in a furnace (1), which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to the end temperature between 400°C and 600°C and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens.
The invention relates to a method and an arrangement for providing chalcogens in the form of thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass. The invention is intended to provide a very fast and cost-effective coating method for chalcogens, in particular for applying thin layers of the chalcogens within the range of 100 nm to 10 μm, or mixtures of these materials, on planar substrates, and also an apparatus suitable for carrying out the method. This is achieved by forming an inlet- and outlet-side gas curtain for the oxygen-tight closure of a transport channel (6) in a vapour deposition head (11), introducing an inert gas into the transport channel (6) for displacing the atmospheric oxygen, introducing one or more substrates (3) to be coated, said substrates being temperature-regulated to a predetermined temperature, into the transport channel (6) of the process chamber (1), introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel (6) at the vapour deposition head above the substrates (3) and forming a selenium layer on the substrates by means of PVD at a predetermined pressure, and removing the substrates (3) after the predetermined process time has elapsed.
CENTROTHERM THERMAL SOLUTIONS GMBH + CO. KG (Germany)
Inventor
Voelk, Hans-Peter
Hartung, Robert Michael
Abstract
The invention relates to an arrangement for the contactless transport of flat substrates, particularly of square or rectangular plates having high breakability along a transport path. The invention is intended to create an arrangement for the contactless transport of flat substrates, with which the substrates can be reliably accelerated, transported and slowed down even in the overhead position, independently from the ambient atmosphere and ambient temperature. This is achieved by a plurality of Bernoulli grippers (2a, 2b) being arranged on both sides along a transport path (3) at a distance behind each other such that the substrate (1) to be transported covers the Bernoulli grippers (2a, 2b) on both sides of the transport path (3) only partially, that the Bernoulli grippers (2a, 2b) each create a gas flow (5, 6) rotating clockwise or counterclockwise relative to the substrate (1) and directed in the transport direction, wherein the Bernoulli grippers (2a, 2b) of each pair create each a differently rotating gas flow (5, 6) and that mechanical lateral guide elements are provided on both sides of the transport path (3).
B65G 51/03 - Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases over a flat surface or in troughs
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
Centrotherm thermal solutions GmbH + Co. KG (Germany)
Inventor
Völler, Hans Ulrich
Müller, Rolf
Hartung, Robert Michael
Abstract
The invention relates to a method for controlling the process gas concentration for the treatment of substrates in a process chamber, wherein a liquid is evaporated in a bubbler by means of the bubbles of a carrier gas that are guided through. The aim of the invention is to create a method for controlling the process gas concentration that is easy to implement. Said aim is achieved by the production of a predetermined constant interior pressure within the bubbler, and subsequent introduction of a carrier gas into the bubbler while at the same time controlling the temperature of the medium to be evaporated within the bubbler in order to set a predetermined vapor pressure.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/52 - Controlling or regulating the coating process
B23K 1/20 - Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
89.
METHOD AND ARRANGEMENT FOR HEAT TREATMENT OF SUBSTRATES
CENTROTHERM THERMAL SOLUTIONS GMBH + CO. KG (Germany)
Inventor
Hartung, Robert Michael
Völler, Hans Ulrich
Abstract
The invention relates to a method for heat treatment of substrates, and to an arrangement for carrying out the method. The object is to provide a method and an arrangement for heat treatment of substrates which allow continuously adjustable cooling rates over a wide temperature range with simultaneously largely homogeneous temperature distribution over the area of the heating/cooling plate. This is achieved by virtue of the cooling/heating plate (1) containing a multiplicity of cooling/heating pipes (5) running parallel to one another, each cooling/heating pipe (5) comprising an outer pipe (9), an inner pipe (8) which can carry a flow and an interspace (10) between them which can carry a flow, and each inner pipe (8) being connected to a supply line for water and each interspace (10) being connected to a supply line for air, with water and air being routed simultaneously through the cooling/heating plate.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
90.
METHOD AND DEVICE FOR PATTERNING COMPONENTS USING A MATERIAL BASED ON SILICON OXIDE
The invention relates to a method and a device for patterning components using a material based on silicon oxide, in particular on silicate glass, glass ceramic or quartz, wherein, according to the method, the material is partially removed at at least a first surface of the component by plasma etching and a substrate temperature which is essentially greater than 90°C but less than the softening point of the material can be set during the plasma etching at least at the surface to be etched. For this purpose, the device is equipped with a heating arrangement for generating the substrate temperature.
The invention relates to the production of silicon-based solar cells, and relates in particular to a method for passivating crystalline silicon solar cells, in which crystalline silicon, in a suitable device, is firstly doped with phosphorus in order to produce a diode under the action of temperature by means of a diffusion process, and this is followed by performing a passivation and antireflection coating of the surface of the silicon by depositing silicon nitride in a plasma method. The invention is intended to provide a method for passivating solar cells with which the efficiency of solar cells is significantly improved with the least possible outlay. This is achieved by virtue of the fact that the 旜dead layer” present in the region near the surface of the silicon blank and having a high phosphorus concentration is removed directly prior to the deposition of the silicon nitride by means of dry etching in an etching plasma.
CENTROTHERM THERMAL SOLUTIONS GMBH + CO. KG (Germany)
Inventor
Michael Hartung, Robert
Keim, Uwe
Abstract
The invention concerns a method and a device for no-contact temperature measurement of substrates inside a chamber that is heated with radiation, particularly substrates of glass, silicon, or graphite, in a temperature range from 20°C to 1300°C, as well as an arrangement for carrying out the method. The issue addressed by the invention is the creation of a method and a device for no-contact measurement of substrates in ovens that are heated with radiation, which enables a no-contact continuous temperature measurement in the range 20°C to 1300°C and therefore avoids a switch between different sensors. This is achieved in that a part of the substrate (2) emission (9) in the long-wave infrared range in the measuring range (12) outside the wavelength area of the radiation emitted by the radiation source is released out of the process chamber and is directed through a filter and to a temperature measuring instrument.
The invention relates to a device for treating wafers (1) in a continuous method in a vertical reactor (2), said device being coupled to a mechanism for charging and discharging the wafer (1). Said device ensures that the wafer can pass safely through the vertical reactor (2). This is achieved by virtue of the fact that two fixed wafer supports (3, 4) for receiving a plurality of wafers (1) are arranged next to each other, leaving a predetermined distance between them in the vertical reactor (2) such that a lifting and pivoting unit (5) which is arranged between the wafer supports (3, 4) and which is used to temporarily receive the wafers (1) in the horizontal direction, can be freely rotated and can be displaced at least partially by the position of the wafer support (3, 4), and can be positioned inside the vertical reactor (2) behind the wafer supports (3, 4) when in a free position (6) and in front of the wafer supports (3, 4) when in a transfer position (7). The lifting and pivoting unit is actively connected to an external charging and discharging unit (8) for individual wafers (1) which is arranged on the outside of the vertical reactor (2) in the transfer position (7). The number of receiving positions for the wafer (1) in the lifting and pivoting unit (5) is at least one higher than the number of receiving positions in the wafer supports (3, 4).
F27B 9/14 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatmentFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment
F27B 9/30 - Details, accessories or equipment specially adapted for furnaces of these types
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
94.
ANTIREFLECTIVE COATING ON SOLAR CELLS AND METHOD FOR THE PRODUCTION OF SUCH AN ANTIREFLECTIVE COATING
The invention relates to an antireflective coating on solar cells made of crystalline silicon as well as a method for producing such an antireflective coating. The aim of the invention is to create an antireflective coating on solar cells made of crystalline silicon which makes it possible to optimize the optical and passivating properties thereof while making it possible to easily and economically integrate the production thereof into the production process especially of very thin crystalline silicon solar cells. Said aim is achieved by the fact that the antireflective coating is composed of successive partial layers, i.e. a lower partial layer (S1) which covers the crystalline silicon, is embodied as an antireflective coating and as passivation with a particularly great hydrogen concentration, and is covered by an upper partial layer (S2) having an increased barrier effect against hydrogen diffusion.
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Germany)
CENTROTHERM PHOTOVOLTAICS AG (Germany)
Inventor
Heintze, Moritz
Möller, Rainer
Wanka, Harald
Lopez, Elena
Hopfe, Volkmar
Dani, Ines
Rosina, Milan
Abstract
The invention relates to a method for the single-sided removal of a doped surface layer on the back faces of crystalline silicon solar wafers. The aim of the invention is the economical removal of doped surface layers from the back faces of said solar wafers with a manipulation that does not damage the substrate. According to the invention, an etching gas is directed onto the back surface of the silicon solar wafers with a plasma at around atmospheric pressure.
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E. V. (Germany)
Inventor
Biro, Daniel
Voyer, Catherine
Wanka, Harald
Koriath, Jörg
Abstract
The invention relates to a doping mixture for coating semiconductor substrates which are then subjected to a high-temperature treatment to form a doped layer. The invention further relates to a method for producing such a doping mixture and the use thereof.
C30B 31/04 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor by contacting with diffusion materials in the liquid state
H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
