Solution-processed negative temperature coefficient (NTC) thermistor devices include transition metal dichalcogenide (TMDC) quantum dots. The TMDC quantum dots may be formulated into an ink, and the ink may subsequently be deposited on a substrate and processed to form an NTC thermistor. Solution-processed NTC thermistors may be incorporated into RFID tags or as circuit protectors into electronic circuits.
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
H01C 1/02 - HousingEnclosingEmbeddingFilling the housing or enclosure
2.
Photodetectors based on two-dimensional quantum dots
A photodetector includes a first electrode; an interlayer disposed on the first electrode; a photoabsorbing layer disposed on the interlayer, the photoabsorbing layer having one or more charge transport materials, and a plurality of two-dimensional quantum dots (2D QDs) dispersed in the one or more charge transport material; and a second electrode disposed on the photoabsorbing layer. A heterostructure photodetector includes a first electrode; a first photoabsorbing layer disposed on the first electrode, the first photoabsorbing layer having a first photoabsorbing material; a second photoabsorbing layer disposed on the first photoabsorbing layer, the second photoabsorbing layer having a second photoabsorbing material; and a second electrode disposed on the second photoabsorbing layer.
H10K 30/35 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
G01N 33/58 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving labelled substances
C09K 11/68 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
Page 28 of 28 68402184-1 ABSTRACT OF THE DISCLOSURE Solution-processed negative temperature coefficient (NTC) thermistor devices include transition metal dichalcogenide (TMDC) quantum dots. The TMDC quantum dots may be formulated into an ink, and the ink may subsequently be deposited on a substrate and processed to form an NTC thermistor. Solution- processed NTC thermistors may be incorporated into RFID tags or as circuit protectors into electronic circuits.
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
4.
Template-assisted synthesis of 2D nanosheets using nanoparticle templates
A template-assisted method for the synthesis of 2D nanosheets comprises growing a 2D material on the surface of a nanoparticle substrate that acts as a template for nanosheet growth. The 2D nanosheets may then be released from the template surface, e.g. via chemical intercalation and exfoliation, purified, and the templates may be reused.
C09K 11/68 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
C30B 19/12 - Liquid-phase epitaxial-layer growth characterised by the substrate
C30B 29/46 - Sulfur-, selenium- or tellurium-containing compounds
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
B01J 23/06 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of zinc, cadmium or mercury
A photodetector (200) includes a bottom electrode (210); an interlayer (220) disposed on the bottom electrode; a photoabsorbing layer (230) disposed on the interlayer, the photoabsorbing layer having one or more charge transport materials, and a plurality of two- dimensional quantum dots (2D QDs) dispersed in the one or more charge transport materials; and a top electrode (240) disposed on the photoabsorbing layer. A heterostructure photodetector (300) includes a bottom electrode (310); a first photoabsorbing layer (320) disposed on the first electrode, the first photoabsorbing layer having a first photoabsorbing material; a second photoabsorbing layer (330) disposed on the first photoabsorbing layer, the second photoabsorbing layer having a second photoabsorbing material; and a top electrode (340) disposed on the second photoabsorbing layer; at least one of the first or second photoabsorbing material is a plurality of two-dimensional quantum dots (2D QDs).
H01L 31/109 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
6.
POLYOXOMETALATE COMPOUNDS EXHIBITING BRIGHT EMISSION AND METHODS OF PRODUCING THE SAME
Methods for the synthesis of a polyoxometalate compounds include heating a metal precursor in the presence of an organic salt. The polyoxometalate compounds produced herein display high photoluminescence quantum yields and photoluminescence maximums in the blue and/or violet regions of the electromagnetic spectrum.
Methods for the synthesis of a polyoxometalate compounds include heating a metal precursor in the presence of an organic salt. The polyoxometalate compounds produced herein display high photoluminescence quantum yields and photoluminescence maximums in the blue and/or violet regions of the electromagnetic spectrum.
A method for synthesizing two-dimensional (2D) nanosheets comprises heating a bulk material in a solvent. The process is scalable and can be used to produce solution-processable 2D nanosheets with uniform properties in large volumes.
A method for synthesizing two-dimensional (2D) nanosheets comprises heating a bulk material in a solvent. The process is scalable and can be used to produce solution-processable 2D nanosheets with uniform properties in large volumes.
A method of synthesis of two-dimensional (2D) nanoparticles comprises combining a first nanoparticle precursor and a second nanoparticle precursor in one or more solvents to form a solution, followed by heating the solution to a first temperature for a first time period, then subsequently heating the solution to a second temperature for a second time period, wherein the second temperature is higher than the first temperature, to effect the conversion of the nanoparticle precursors into 2D nanoparticles. In one embodiment, the first nanoparticle precursor is a metal-amine complex and the second nanoparticle precursor is a slow-releasing chalcogen source.
A method of synthesis of two-dimensional (2D) nanoparticles comprises combining a first nanoparticle precursor and a second nanoparticle precursor in one or more solvents to form a solution, followed by heating the solution to a first temperature for a first time period, then subsequently heating the solution to a second temperature for a second time period, wherein the second temperature is higher than the first temperature, to effect the conversion of the nanoparticle precursors into 2D nanoparticles. In one embodiment, the first nanoparticle precursor is a metal-amine complex and the second nanoparticle precursor is a slow-releasing chalcogen source.
A template-assisted method for the synthesis of 2D nanosheets comprises growing a 2D material on the surface of a nanoparticle substrate that acts as a template for nanosheet growth. The 2D nanosheets may then be released from the template surface, e.g. via chemical intercalation and exfoliation, purified, and the templates may be reused.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C30B 19/12 - Liquid-phase epitaxial-layer growth characterised by the substrate
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C30B 29/46 - Sulfur-, selenium- or tellurium-containing compounds
B01J 27/047 - Sulfides with chromium, molybdenum, tungsten or polonium
B01J 27/057 - Selenium or telluriumCompounds thereof
B01J 27/02 - Sulfur, selenium or telluriumCompounds thereof
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
B01J 35/00 - Catalysts, in general, characterised by their form or physical properties
A template-assisted method for the synthesis of 2D nanosheets comprises growing a 2D material on the surface of a nanoparticle substrate that acts as a template for nanosheet growth. The 2D nanosheets may then be released from the template surface, e.g. via chemical intercalation and exfoliation, purified, and the templates may be reused.
A method of synthesizing two-dimensional (2D) nanoparticles of transition metal dichalcogenide (TMDC) material utilises a molecular cluster compound. The method allows a high degree of control over the shape, size and composition of the 2D TMDC nanoparticles, and may be used to produce material with uniform properties in large quantities.
A method of synthesis of two-dimensional (2D) nanoflakes comprises the cutting of prefabricated nanoparticles. The method allows high control over the shape, size and composition of the 2D nanoflakes, and can be used to produce material with uniform properties in large quantities. Van der Waals heterostructure devices are prepared by fabricating nanoparticles, chemically cutting the nanoparticles to form nanoflakes, dispersing the nanoflakes in a solvent to form an ink, and depositing the ink to form a thin film.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0384 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
B01J 13/00 - Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided forMaking microcapsules or microballoons
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices and so on. In the present invention, the complexity and functionality of such van der Waals heterostructures is taken to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light-emitting diodes (LEDs) made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H05B 33/26 - Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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