Abstract

The coating film of the present invention is formed on the surface of a vacuum chamber wall or internal component used for manufacturing semiconductors or display devices, wherein the coating film contains an yttrium compound, has resistance to plasma, and contains hydrogen in a predetermined ratio.

IPC Classes  ?

• C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
• C23C 16/40 - Oxides
• C23C 4/11 - Oxides
• C23C 14/08 - Oxides

Abstract

Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements.

IPC Classes  ?

• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01J 27/02 - Ion sourcesIon guns
• H01J 5/10 - VesselsContainersShields associated therewithVacuum locks provided with coatings on the walls thereofSelection of materials for the coatings on internal surfaces
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements.

IPC Classes  ?

• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01J 27/02 - Ion sourcesIon guns
• H01J 5/10 - VesselsContainersShields associated therewithVacuum locks provided with coatings on the walls thereofSelection of materials for the coatings on internal surfaces
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

The present invention relates to a repeller for an ion implanter and an ion generating device comprising the same. According to the preset invention, it is possible to provide a part for an ion implanter and an ion generating device comprising the same, wherein a part such as a repeller, a cathode, a chamber wall, or a slit member, which constitutes an arc chamber of an ion generating device for ion implantation that is used to manufacture a semiconductor element, is provided with a semi-carbide layer-including coating structure for the purpose of thermal deformation stabilization, for the purpose of wear protection, or for the purpose of deposited material peeling resistance, thereby enabling a precise ion implantation process having no distortion of the ion generating position and no distortion of the equipment, and electrons can be evenly reflected into the arc chamber such that, by increasing the uniformity of the plasma, not only the efficiency of decomposition of the ion source gas is improved, but the service life is substantially improved compared with that of existing parts.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

The present invention relates to a spiral tap for processing an ultra-hard material, wherein an inclined initial processing part is formed at the front end and sequentially processes an ultra-hard material, thereby smoothly preventing damage to a cutting blade due to a chip. The tap comprises: a tap body provided in a long rod shape and having a circular cross section at the rear end; an initial processing part provided with one pair of upper and lower inclination blades processed to be sharp and inclined toward the front end of the tap body; a plurality of spiral grooves provided immediately before a coupling part in the initial processing part, formed in a spiral shape along the outer circumferential surface of the tap body, and having an inside portion rounded in a semicircle shape; and a plurality of cutting blades provided at the rear end of the initial processing part and formed in a thread shape along the portion at which the spiral grooves are formed.

IPC Classes  ?

• B23G 5/06 - Taps
• B23B 51/00 - Tools for drilling machines