The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.
C30B 11/06 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.
C30B 11/06 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
The present invention relates to an apparatus for continuous treatment of two immiscible molten liquids having different densities. The apparatus comprises at least one open-ended helical reaction channel (3) arranged inside a substantially vertical housing (1), means for the continuous supply of the liquid with the higher density to the upper open end of said at least one reaction channel (3) and means for continuous supply of the liquid with the lower density to the lower open end of said at least one helical reaction channel (3), means for continuous removal of the liquid with the higher density at the lower open end of said helical reaction channel and means for removal of the liquid with the lower density from the upper open end of said helical reaction channel (3). The invention further relates to a method for continuous treatment of two immiscible molten liquids having different densities using the apparatus of the present invention.
C22B 9/10 - General processes of refining or remelting of metalsApparatus for electroslag or arc remelting of metals with refining or fluxing agentsUse of materials therefor
The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
Silicon for industrial purposes, in particular high purity silicon for solar cells; none of the aforesaid for use in batteries and/or energy storage systems.
The present invention relates to a method for production of calcium compounds having very low content of phosphorus and boron from an impure calcium chloride, solution containing phosphorus and boron, which method comprises the following steps: a) addition of a FeCl3-solution to the calcium chloride solution, b) adjusting the pH of the solution by addition of a base to between 3 and 9.5 for precipitation of iron hydroxide, iron phosphate and boron compounds, c) removal of the solid precipitate from the solution in step b) obtaining a purified calcium chloride solution, d) precipitation of a calcium compound from the solution from step c), and e) separation of the calcium compound from the solution in step d).
The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.
H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
8.
Method and apparatus for refining a molten material
The method and apparatus includes a vessel having a bottom and sidewalls arranged to house the material in a molten state. A temperature controlled horizontally oriented, cooling plate is movable into and out of the top of the molten material. When the cooling plate is lowered into the top of the melt, an ingot of solid silicon is solidified downwards.
