Abstract

A method for producing a stack, includes the following steps: forming a first layer able to conduct electricity, forming a layer of interest on the first layer, the layer of interest comprising at least one free volume, forming at least one repairing element, each repairing element at least partially filling a free volume, called the free volume of interest, the repairing element comprising at least one insulating layer and leaving free an upper surface of the layer of interest opposite the first layer located outside of the at least one free volume, forming a second layer, able to conduct electricity, on the layer of interest, the second layer covering the repairing element and the free surface, the step of forming the repairing element comprising the following steps: forming, on the layer of interest, a layer that extends at least partially into the free volume of interest, covering at least one portion of the buffer layer located in the volume of interest with a filling layer, the buffer layer and the filling layer being made from different materials.

IPC Classes  ?

• H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
• H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
• H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices

Abstract

A concrete structural element is provided that includes a concrete matrix; a steel reinforcing structure embedded in said matrix; at least first and second attitude sensors at a distance from one another in a direction, embedded in said matrix and fixed to said reinforcing structure; and a processing circuit configured to recover attitude measurements supplied by each attitude sensor and configured to compute a deformation of said structural element relative to said direction as a function of the attitude measurements recovered.

IPC Classes  ?

• G01M 5/00 - Investigating the elasticity of structures, e.g. deflection of bridges or aircraft wings
• E04C 3/26 - JoistsGirders, trusses, or truss-like structures, e.g. prefabricatedLintelsTransoms of concrete or other stone-like material, e.g. with reinforcements or tensioning members prestressed
• G01H 1/00 - Measuring vibrations in solids by using direct conduction to the detector
• G01B 21/32 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring the deformation in a solid
• E04B 1/22 - Structures comprising elongated load-supporting parts, e.g. columns, girders, skeletons the supporting parts consisting of concrete, e.g. reinforced concrete, or other stone-like material with parts being prestressed

Abstract

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.

IPC Classes  ?

• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
• H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/52 - Encapsulations
• H01L 33/58 - Optical field-shaping elements
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

Described herein are articles, systems, and methods relating to fuel cell systems that include anode chambers with variable volumes. The volume of the anode chamber may be relatively small or essentially zero upon start up to prevent influx of contaminants that would have to be purged from the system. As fuel is directed into the anode chamber, the chamber volume increases to accommodate the flow of fuel.

IPC Classes  ?

• H01M 8/04089 - Arrangements for control of reactant parameters, e.g. pressure or concentration of gaseous reactants
• H01M 8/04223 - Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids during start-up or shut-downDepolarisation or activation, e.g. purgingMeans for short-circuiting defective fuel cells
• H01M 8/04082 - Arrangements for control of reactant parameters, e.g. pressure or concentration
• H01M 8/2484 - Details of groupings of fuel cells characterised by external manifolds
• H01M 8/0271 - Sealing or supporting means around electrodes, matrices or membranes

Abstract

A method of characterizing the coagulation or sedimentation dynamics of a fluid such as whole blood, a blood fraction, or blood plasma, the method including: illuminating a sample of the fluid with a beam of coherent light; acquiring a time series of images of a speckle pattern generated by interaction between the sample and the spatially coherent light beam; and processing the time series of images; wherein the processing step includes calculating a function representative of the variation in the speckle pattern between two or more images of the series. The invention also provides a device for implementing such a method.

IPC Classes  ?

• G01N 33/86 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving blood coagulating time
• G01N 33/50 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing
• G01N 21/49 - Scattering, i.e. diffuse reflection within a body or fluid
• G01N 21/47 - Scattering, i.e. diffuse reflection
• G01N 33/49 - Physical analysis of biological material of liquid biological material blood
• G01N 21/75 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
• G06T 7/00 - Image analysis

Abstract

A method for producing interconnection lines including etching a layer of porous dielectric material forming a trench and filling the trench is provided. The etching is carried out in a plasma so as to grow, all along the etching, a protective layer on flanks of the layer of porous dielectric material. The plasma is formed from a gas formed from a first component and a second component, or a gas formed from a first component, a second component and a third component. The first component is a hydrocarbon of the CXHY type, where X is the proportion of carbon in the gas and Y the proportion of hydrogen in the gas; the second component is taken from nitrogen or dioxygen or a mixture of nitrogen and dioxygen; the third component is taken from argon or helium; and the protective layer is based on hydrocarbon.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

An integrated circuit includes a stack having a semiconductor substrate with a first type of dopant, an UTBOX type buried insulating layer, electronic components, formed in the substrate, ground planes disposed beneath the buried insulating layer so as to be respectively plumb with corresponding components, wells with the first type of dopant, the wells being respectively beneath corresponding ground planes, and a bias circuit enabling distinct voltages to be applied to the ground planes by the wells. The wells are separated from the substrate by a deep well with a second type of dopant. The wells are separated from each other by a separating structure, which is either a lateral well having a second type of dopant or a block of insulating material.

IPC Classes  ?

• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 27/11 - Static random access memory structures
• H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
• H01L 29/786 - Thin-film transistors

Abstract

The present invention relates to a method and a system for determining the position of an object which can be a passive or an active tag (140). The system comprises a plurality of anchor nodes (111,112) and a plurality of non-regenerative relays (121,122,123) of known positions. In case of an active tag, a UWB pulse signal is emitted by the tag and received by the anchor nodes either directly or via a relay. In case of a passive tag, UWB pulse signals are sent by the anchors nodes and reflected back, either way being either a LOS path or a relayed path. A processing node (130) collects the signals received by the anchor nodes (111,112) to estimate the position of the tag.

IPC Classes  ?

• G08B 13/14 - Mechanical actuation by lifting or attempted removal of hand-portable articles
• G08B 13/24 - Electrical actuation by interference with electromagnetic field distribution
• G01S 5/02 - Position-fixing by co-ordinating two or more direction or position-line determinationsPosition-fixing by co-ordinating two or more distance determinations using radio waves

Abstract

A nano electro-mechanical system (NEMS) formed on a substrate is provided including at least one fixed part associated with the substrate and at least one movable part in relation to the substrate, the system including a transduction component configured to excite the movable part to confer on it a movement and/or to detect a movement of the movable part, the transduction component including at least one electrically conductive material. The electrically conductive material is made of an AlSi alloy based deposition, the deposition being supported at least in part by the movable part of the system.

IPC Classes  ?

• G01P 15/10 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by vibratory elements by vibratory strings
• G01P 15/097 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by vibratory elements
• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• G01N 29/02 - Analysing fluids
• G01P 15/12 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by alteration of electrical resistance

Abstract

An electromagnetic radiation detection device including multiple elementary detectors grouped into one or more sub-assemblies each including several elementary detectors, where each elementary detector is connected by an interconnection to an impedance-matching device. The impedance-matching device is common to all the elementary detectors of a single sub-assembly, in each sub-assembly the interconnections have roughly the same resistance value.

IPC Classes  ?

• G12B 13/00 - Calibrating of instruments or apparatus

Abstract

A photonic radiation detection device includes a collimator, a detector, means for localization in the detection plane defining on the one hand the partitioning of the detection plane in physical or virtual pixels of transversal dimensions smaller than those of the collimator channels, and associating on the other hand one of said pixels to each photon interaction. The detection device has at least in one previously selected acquisition configuration, a degree of pixelation in the detection plane greater than 1 and a collimator-detector distance (c) greater than one tenth of the septal height (h) of the collimator. A method for dimensioning such a device includes, for at least one given spatial frequency, calculating and comparing merit indicator values for different acquisition configurations of a structural model of the detection device.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors

Abstract

b) made in said oscillator.

IPC Classes  ?

• G01N 15/06 - Investigating concentration of particle suspensions
• G01N 29/00 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic wavesVisualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
• G01N 5/00 - Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
• G01G 3/13 - Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing having piezoelectric or piezo-resistive properties
• G01G 3/16 - Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing measuring variations of frequency of oscillations of the body