Abstract

In order to reduce the field curvature of an image rendered by electron beams from a planar electron beam source and correct distortion, provided is an electron beam irradiation device provided with: a planar electron beam source in which a plurality of electron beam generation sources are arranged; a condenser lens array which has a plurality of condenser lenses respectively provided to correspond to the plurality of electron beam generation sources; and an electron lens on which a plurality of electron beams from the plurality of electron beam generation sources are incident via the condenser lens array, and which scales down an image formed by the plurality of electron beams. Among the plurality of electron beam generation sources, a first electron beam generation source distant from the center emits electrons with higher energy than a second electron beam generation source close to the center does, and among the plurality of condenser lenses, the focal length of a first condenser lens corresponding to the first electron beam generation source is made longer than that of a second condenser lens corresponding to the second electron beam generation source.

IPC Classes  ?

• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
• H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

Abstract

An electron beam generating apparatus (200) of the present invention is provided with: a substrate (210), in which a plurality of holes (214) are provided; a plurality of electron emitting sections (300), which are respectively provided on the bottom surfaces of the holes, and which emit electrons; and a plurality of first electrode sections (310), which are provided corresponding to the electron emitting sections, respectively, accelerate the electrons emitted from the corresponding electron emitting sections, and output, as electron beams, the electrons from the holes that are respectively provided with electron emitting sections. Consequently, throughput of an electron beam exposure apparatus can be improved.

IPC Classes  ?

• H01J 37/063 - Geometrical arrangement of electrodes for beam-forming
• H01J 1/312 - Cold cathodes having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
• H01J 9/02 - Manufacture of electrodes or electrode systems
• H01J 37/073 - Electron guns using field emission, photo emission, or secondary emission electron sources
• H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

Abstract

A surface emission type electron source comprises a planar first electrode, a planar second electrode provided in opposition to the first electrode, an electron passage layer provided between the first electrode and the second electrode, and a power section for applying voltage to the second electrode and the first electrode. In the electron passage layer, a plurality of quantum wires extending in a first direction heading for the second electrode from the first electrode are provided with a predetermined gap therebetween. Electrons are emitted from the surface of the second electrode. The quantum wire is composed of silicon. In the quantum wire, a plurality of portions whose thickness is thin are formed with a predetermined gap therebetween in the first direction.

IPC Classes  ?

• H01J 1/312 - Cold cathodes having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
• H01J 3/14 - Arrangements for focusing or reflecting ray or beam
• H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• H01J 37/073 - Electron guns using field emission, photo emission, or secondary emission electron sources

Abstract

A method of evaluating astigmatism of an irradiation system irradiating an electron beam is disclosed. In this method, a figure pattern consisting of plural (for example, four) concentric circles is formed on a reference sample 'WP' and an image (scanned image) is formed based on an electron signal obtained by scanning the electron beam onto the reference sample 'WP'. In the scanned image, the image has a blur in a region with its longitudinal direction parallel to the generating direction of the astigmatism and the size of the blur depends on magnitude of the astigmatism. Therefore, the direction and the magnitude of the astigmatism of the irradiation system of an irradiation apparatus can be detected based on the obtained scanned image.

IPC Classes  ?

• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• G01N 1/00 - SamplingPreparing specimens for investigation
• G03F 7/20 - ExposureApparatus therefor
• H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
• H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
• H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching