The disclosure relates to a power module including a semiconductor power circuit, a conductor and a first core part being arranged besides the conductor such that it can form a core together with a second core part. The disclosure further relates to methods for manufacturing such a power module.
The disclosure includes a cooler for an electronic component comprising a base plate having an outer surface and an inner surface. Channel walls are arranged on the inner surface defining fluid channels, wherein at least a first kind of channels and a second kind of channels are provided. A geometry of the first kind of channels and the second kind of channels differ such that an amount of fluid flowing through the first kind of channel is different to an amount of fluid flowing through the second kind of channel.
Semiconductor power module comprising at least one semiconductor switching element on a substrate. The substrate having a first main extent surface. At least one capacitor with a second main extent surface is directly, electrically connected to the substrate. Wherein the substrate and the capacitor are assembled in a stack with the first main extent surface facing the second main extent surface or with the first main extent surface facing away from the second main extent surface. The capacitor and the substrate are housed in a common housing. The connection line between the substrate and the capacitor is provided within the housing. The substrate is directly or indirectly supported by the capacitor to form the stack so that the capacitor is a holder of the substrate. The semiconductor power module can be used in single phase and multi-phase inverters as well as in multi-level inverter.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
A semiconductor power module includes one or more semiconductors placed on a substrate. At least one contact pin extends basically perpendicular to the substrate and is electrically connected to the substrate or the semiconductor via a pin foot. A terminal end of the contact pin protrudes outside an encapsulation compound encapsulating at least partially the substrate, the one or more semiconductors, and the contact pin. At least one sealing ring and at least one washer are received by a pin shaft of the contact pin such that they rest on the pin foot. The washer is fixed by the encapsulation compound, and the sealing ring is held in longitudinal direction of the pin shaft in an elastically deformed state by the washer.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
5.
PRESSURE-SINTERING METHOD EMPLOYING DEFORMATION UPTAKE MEANS
A method for fixing an attachment object to a side of a patterned object comprising a plurality of protrusions with tip portions, by pressure-sintering. A deformation uptake means made of a material having a lower yield strength and/or a lower hardness than the tip portions, is arranged between the patterned object and at least a fraction of the tip portions.
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
B22F 3/16 - Both compacting and sintering in successive or repeated steps
A method is described forming a first sub-leadframe having one or more first connection terminals; forming a second sub-leadframe having one or more second connection terminals; joining the first and second sub-leadframes to form a leadframe such that at least some of the first connection terminals overlap at least some of the second connection terminals.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
An apparatus is disclosed to include: a conductor structure (such as a busbar) comprising a first electrical connection and a second electrical connection; a first capacitor pair including a first capacitor and a second capacitor mounted directly opposite each other on opposite sides of the conductor structure, wherein the first and second capacitors each have a first electrical connector and a second electrical connector having a first electrical capacitance therebetween, and wherein the first and second capacitors each have a first side and a second side opposite the first side; a first connection arrangement connecting the first electrical connector of the first capacitor and the first electrical connector of the second capacitor to the first electrical connection of the conductor structure; and a second connection arrangement connecting the second electrical connector of the first capacitor and the second electrical connector of the second capacitor to the second electrical connection of the conductor structure. The first electrical connectors on the first side of the respective capacitors are aligned on the respective sides of the conductor structure and the second electrical connectors on the first side of the respective capacitors are aligned on the respective sides of the conductor structure.
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H02M 7/537 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
A coolant coupling device wherein the cooler includes a cavity wherein the coolant trajectory is altered by an angle of greater than 75 degrees and which is defined by a wall structure incorporating two radii.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
A power semiconductor module (1) having two or more semiconductor components (3, 53, 55) which are electrically connected in parallel. The first power contacts (7) of each semiconductor component (3, 53, 55) are electrically connected to a first track (9). The second power contacts (11) of each semiconductor component (3, 53, 55) are electrically connected to a second track (13) by connecting means (15). The connecting means (15) include at least a first connecting element (17) connecting a first semiconductor component (53) of the two or more semiconductor components (3) to the second track (13) via a first contact area (19), and a second connecting element (21) connecting a second semiconductor component (55) of the two or more semiconductor components (3) with the second track (13) by a second contact area (23). The second connecting element (21) partially overlaps the first contact area (19) and/or first connecting element (17).
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
10.
ELECTRONIC STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
The invention concerns an electronic structure comprising a semiconductor chip (1), the semiconductor chip (1) comprising at least one upper metallic layer (5) on an upper side of the semiconductor chip (1), wherein a metallic element (7) is disposed on the upper metallic layer (5), the metallic element (7) comprising a contact surface (9) for contacting an electrical connection means characterized in that nanowires (8) are arranged between the upper metallic layer (5) and the metallic element (7) connecting the semiconductor chip (1) and the metallic element (7) to each other.
A power electronic module (2) includes at least one semiconductor switch (4) and a gate-source control unit. The gate-source control unit includes an asymmetric transient voltage suppressor (TVS) diode (8) or two Zener diodes (10, 10′) or one or more avalanche diodes arranged between the gate terminal (G) and the source terminal (S) of the semiconductor switch (4).
The invention relates to a method (100) for forming a multi-metal cooler, the method (100) comprising the following steps: Connecting (102) at least one first metal part to at least one second metal part in a materially bonded manner Pressing (104) the at least one first metal into the at least one second metal part after the step of connecting the at least one first metal part to the at least one second metal part in a materially bonded manner; and Shaping (106) the at least one second metal part into a predetermined shape of the multi-metal cooler. The method (100) provides an improved reliability of the multi-metal connection and in improved thermal conductivity through the multi-metal connection of the formed multi-metal cooler.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/46 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids
H01L 23/467 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing gases, e.g. air
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
A molded power module (2) comprising: - a substrate (12) comprising an upper conductive layer (5, 6); - at least one semiconductor (10, 10') placed on the upper conductive layer (5, 6) of the substrate (12); - a molded portion (30) covering the at least one semiconductor (10). The molded portion (30) comprises at least two domes (18, 18', 18'') protruding from the remaining area of the molded portion (30), wherein the domes (18, 18', 18') are spaced from each other.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
An apparatus is described having: a baseplate; an AC busbar mounted on the baseplate; a DC busbar having an upper DC busbar, a lower DC busbar and an insulating material therebetween, wherein the DC busbar is mounted such that the lower DC busbar is mounted to the baseplate and wherein the upper DC busbar has one or more openings through which the lower DC busbar is exposed; a first group of switching components mounted on the AC busbar, wherein the first group of switching components are connected to the upper DC busbar using first electrical connection means; and a second group of switching components mounted on the lower DC busbar, wherein at least one of the switching components of said second group of switching components is mounted within one of said openings, wherein the second group of switching components are to the AC busbar using second electrical connection means.
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H03K 17/16 - Modifications for eliminating interference voltages or currents
H05K 7/14 - Mounting supporting structure in casing or on frame or rack
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
A joining method (100) for joining a first joining member (101) and a second joining member (103). The method (100) comprises placing (105) the second joining member (103) on a contact material (107) that changes its stiffness depending on a rate of change of mechanical stress applied to the contact material (107), placing (109) the first joining member (101) on the second joining member (103), and applying (111) mechanical stress to the contact material (107) by moving the first joining member (101) relative to the second joining member (103). Further, the present invention relates to an anvil.
B23K 20/10 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
B23K 37/04 - Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
The invention disclosed herein relates to a sonotrode (100, 500, 600, 700) for ultrasonic welding. The sonotrode (100, 500, 600, 700) comprising a shaft (101 ) with a first end (103), a second end (105) opposite to the first end (103), and a tip (109, 501, 601, 701) on the second end (105), wherein the first end (103) is configured for being connected to an ultrasonic welding apparatus, wherein the tip (109, 501, 601, 701) is configured for contacting a joining member (401), wherein the tip (109, 501, 601, 701) comprises a number of ridges (111) that extend radially from a center (113) of the tip (109, 501, 601, 701) towards an outer rim (115, 603) of the tip (109, 501, 601, 701), wherein a longitudinal axis (107) is running from the first end (103) to the second end (105), and wherein the rim (115, 603) is further from the first end (103) than the center (113), measured parallel to the axis (107).
B23K 20/10 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
A cooling system (26) comprising a cooling arrangement (24, 24′, 24″) having a serpentine passageway (20) for a circulating fluid coolant is disclosed. The serpentine passageway (20) is provided between a plurality of walls (6, 8) displaced from each other. A series of baffles (10) each having a proximal portion (12) and a distal portion (14) are disposed within the passageway (20). The baffles (10) extend from one of the walls into the passageway (20). The distal portion (14) has a width (W2) that is larger than the width (W1) of the proximal portion (12).
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
A power module (2) including a rigid insulated substrate (10) mounted on a baseplate (4) is disclosed. An additional circuit carrier (6, 8) is mounted on the baseplate (4) adjacent to the rigid insulated substrate (10). The additional circuit carrier (6, 8) has a rigidity which is less than that of the rigid insulated substrate (10).
The invention is related to a cooler for an electronic component comprising a base plate (1) having an outer surface and an inner surface (3). Channel walls (2) are arranged on the inner surface defining fluid channels (4, 5), wherein at least a first kind of channels (4) and a second kind of channels (5) are provided. A geometry of the first kind of channels (4) and the second kind of channels (5) differ such that an amount of fluid flowing through the first kind of channel (4) is different to an amount of fluid flowing through the second kind of channel (5).
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 23/367 - Cooling facilitated by shape of device
20.
POWER MODULE WITH IMPROVED ELECTRICAL AND THERMAL CHARACTERISTICS
A power module (1) includes a group of at least three rectangular electrical power components (11, 12, 13, 14, 23, 24, 25, 26) arranged on a substrate (2), wherein in that at least one side (31) of at least one of the rectangular electrical power components (11, 14) is not orthogonal or parallel to a line (3) that passes through the geometric centres of the remaining rectangular electrical power components (12, 13) of the group.
METHOD FOR PRODUCING AN ELECTRONIC ASSEMBLY BY SIMULTANEOUSLY MOUNTING AT LEAST ONE FIRST ELECTRONIC COMPONENT BY PRESSURE SINTERING AND AT LEAST ONE SECOND ELECTRONIC COMPONENT BY PRESSURELESS SINTERING
Method for producing an electronic assembly (100) comprising a circuit carrier (10), at least one first electronic component (30) and at least one second component (40) comprises connecting the first component (30) to the circuit carrier (10) using a first sinter compound (20) by sintering under application of a pressure which acts locally on the first component (30), the first sinter compound (20) and the circuit carrier (10) in the region of the first component (30), whilst simultaneously connecting the second component (40) to the circuit carrier (10) by pressureless sintering using a second sinter compound (20). The at least one first component (30) may be an active component, such as a semiconductor, a power semiconductor, an IGBT transistor, a MOSFET transistor or a diode. The at least one second component (40) may be a passive component such as a surface mounted device (SMD) or may be selected from thermal sensors, current sensors, inductors, capacitors, resistors, wires, heavy wires and ribbons. The locally acting pressure in the region of the first component (30) may be applied uniaxially to the first component (30), the sinter compound (20) and the circuit carrier (10). The connection of the first electronic component (30) to the circuit carrier (10) via the first sinter compound (20) may be realized by the application of pressure to the first component (30) via an (upper) die (200) of a sintering device under the simultaneous effect of temperature. A connection of the second component (40) to the circuit carrier (10) by pressureless sintering using the second sinter compound (20) may likewise be simultaneously realized under the effect of temperature. The pressing die (200) may have a recess in the position in which the second component (40) is located, so that the pressing die (200) receives the second component (40) without exerting pressure thereon. Alternatively, the assembly (100) may be designed in such a way that the second component (40) is arranged altogether lower or has a smaller overall height than the first component (30), so that the die (200) cannot come into contact with the second component (40). The sinter compound (20) may be a dried sinter paste or a sinter pad. The sinter compound (20) may be affixed to the first or second component (30, 40) or to the circuit carrier (10) before the connection of the first or second component (30, 40) to the circuit carrier (10). A separating foil (210) may be arranged between the assembly (100) to be sintered and the pressing die (200), wherein, to prevent the pressing die (200) from being able to exert pressure on the second component (40) via the separating foil (210), the separating foil (210) may be provided with a recess in the region of the second component (40), which leaves the second component (40) uncovered. Thanks to the pressure sintering, the first electronic component (30) may be reliably installed despite the high variable loads and thanks to the pressureless sintering, the second component (40) may be installed without breaking.
H01L 21/603 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/98 - Assembly of devices consisting of solid state components formed in or on a common substrateAssembly of integrated circuit devices
H05K 3/32 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A power module (2) including a plurality of rectangular electrical power components (4, 4′) arranged on a substrate (6). The sides of at least a subset of the rectangular electrical power components (4, 4′) are not orthogonal to a line (12, 12′) that passes through the geometric centre (C) of the rectangular electrical power components (4, 4′) of the subset and extends orthogonal to a side (L, M) of the substrate (6).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
A power module is described comprising: a plurality of DC terminals at a first end of the power module for receiving a DC input, wherein the plurality of DC terminals comprise one or more positive DC terminals and one or more negative DC terminals; an AC terminal for providing an AC output; a plurality of first switching elements, electrically connected in parallel, wherein the first switching elements are provided in one or more lines running from the first end of the power module to a second end of the power module, opposite the first end, wherein the first switching elements selectively connect the one or more positive DC terminals to the AC terminal; a plurality of second switching elements, electrically connected in parallel, wherein the second switching elements are provided in one or more lines running from the first end to the second end of the power module, wherein the second switching elements selectively connect the one or more negative DC terminals to the AC terminal; and a first current diverting structure connecting one of the DC terminals at the first end and a first DC terminal point at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements at or near the second end of the power module.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H01L 23/00 - Details of semiconductor or other solid state devices
A method is described forming a first sub-leadframe having one or more first connection terminals; forming a second sub-leadframe having one or more second connection terminals; joining the first and second sub-leadframes to form a leadframe such that at least some of the first connection terminals overlap at least some of the second connection terminals.
A coolant coupling device wherein the cooler comprises a cavity wherein the coolant trajectory is altered by an angle of greater than 75 degrees and which is defined by a wall structure incorporating two radii.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
Electronic device (1), comprising a power module (3) having a circuit carrier (5) on which one or more heat generating circuit components (7) are disposed. A cooling structure (11), and an intermediate structure (15) disposed between the circuit carrier (5) and the cooling structure (11). Wherein the cooling structure (11) is made of a first metal material (13), and the intermediate structure (15) is made of a second metal material (17) having a higher thermal conductivity than that of the first metal material (13). Where the intermediate structure (15) comprises a first area (19) with a first thickness (21) and a second area (23) with a second thickness (25), and that the first thickness (21) is greater than the second thickness (25).
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
27.
POWER MODULE WITH PARALLEL-SWITCHED SEMICONDUCTOR COMPONENTS
Power semiconductor module (1) comprising two or more semiconductor components (3, 53, 55) which are electrically connected in parallel. The first power contacts (7) of each semiconductor component (3, 53, 55) are electrically connected to a first track (9). The second power contacts (11) of each semiconductor component (3, 53, 55) are electrically connected to a second track (13) by connecting means (15). The connecting means (15) comprises at least a first connecting element (17) connecting a first semiconductor component (53) of the two or more semiconductor components (3) to the second track (13) via a first contact area (19), and a second connecting element (21) connecting a second semiconductor component (55) of the two or more semiconductor components (3) with the second track (13) by a second contact area (23). The second connecting element (21) partially overlaps the first contact area (19) and/or first connecting element (17).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
28.
SEMICONDUCTOR POWER MODULE AND METHOD AND TOOL FOR MANUFACTURING SUCH A MODULE
A semiconductor power module (10) comprising one or more semiconductors (4) placed on a substrate (7) is disclosed. The power module (10) comprises a contact formed from a contact pin (6) provided with a plastic sleeve (5) having a central portion (13). Therein the contact pin (6) comprises a longitudinal axis (Y). The plastic sleeve (5) encases a portion of the contact pin (6). The distal portion of the sleeve (5) comprises a plastically deformed zone (8). The sleeve (5) encases the proximal portion of the contact pin (6), wherein the sleeve (5) is continuous from its distal portion to its proximal portion and the proximal portion is in direct contact with the substrate (7) or a structure (9) being in direct contact with the substrate (7).
B29C 45/14 - Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mouldApparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
B29C 70/72 - Encapsulating inserts having non-encapsulated projections, e.g. extremities or terminal portions of electrical components
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
B29C 33/14 - Moulds or coresDetails thereof or accessories therefor with incorporated means for positioning inserts, e.g. labels against the mould wall
A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A method for manufacturing an electronic device (2) having a baseplate (32) is disclosed. The method comprises the following steps: - arranging a component (4) on the top surface of a baseplate (32) and placing the component (4) and the baseplate (32) in a sintering press (40), - carrying out a sintering process in which a sintering pressure is pro¬ vided while heating up the parts to be joined (the component (4) and the baseplate (32)), hereby joining the component (4) and the baseplate (32); - opening the sintering press (40) after having carried out said sintering process and - removing the electronic device (2) from the sintering press (40). The method comprises the step of forcing a bottom structure (20) to¬ wards the bottom surface of the baseplate (32) simultaneously with the sintering process and hereby joining the bottom structure (20) and the baseplate (32).
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
A power module (2) including a molded package (4), three power terminals (6, 8, 10) protruding from a first side (40) of the molded package (4) is disclosed. The power terminals (6, 8, 10) include a positive DC terminal (6), a neutral terminal (8) and a negative terminal (10). The power module (2) includes a phase output power terminal (12) protruding from a second side (42) of the molded package (4). The power module (2) is a three-level power module including a plurality of control pins (14, 16, 18, 20, 22, 24, 26, 28, 30, 32, 34, 36) protruding from the second side (42) of the molded package (4).
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
32.
Semiconductor module with a first substrate, a second substrate and a spacer separating the substrates from each other
Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.
Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.
The invention relates to a power electronics module including a first circuit carrier (5,10, 11), as well as an electronic assembly (20, 30) arranged in an electrically contacting manner on the upper flat side of the first circuit carrier (5, 10, 11), and a first cooling element (40) in thermal contact with the underside of the first circuit carrier (5, 10, 11), wherein the module has at least one second assembly (20, 30) arranged on the upper side of a second circuit carrier (5, 10, 11) and a second cooling element (40) arranged on the underside of the second circuit carrier (5, 10, 11), wherein the first and the second circuit carriers (5, 10, 11) are arranged with their upper sides facing one another and at least one central heat sink (60, 61, 63, 64) that is electrically insulated from the assemblies (20, 30) is arranged in the space between the assemblies (20, 30), wherein the assemblies (20, 30) and the at least one central heat sink (60, 61, 63, 64) are embedded in a heat-conducting potting compound (50), wherein the module has a number N≥3 of circuit carriers (5, 10, 11) with assemblies (20, 30) mounted on their upper sides and cooling elements (40) mounted on their undersides, and the sides having the assemblies (20, 30) and directed towards one another are arranged around the central heat sink (60, 61, 63, 64) forming a shape with an N-sided polygon as across-section.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
The invention relates to a power electronics module including a flat circuit carrier (5) and an electronic assembly (10) arranged in an electrically contacting manner on the upper flat side of the circuit carrier (5) and cooling bodies (20) thermally in contact with the underside of the circuit carrier (5), wherein a heat-conducting bridge (30) arranged on the upper side of the circuit carrier (5), spanning the assembly (10) and extensively covering same, wherein the heat-conducting bridge (30) is in thermal contact with the cooling body (20) at mounting points arranged next to the assembly (10) and the space between the heat-conducting bridge (30) and the circuit carrier (5) is filled with a heat-conducting potting compound (50).
An apparatus is described comprising: a conductor structure (such as a busbar) comprising a first electrical connection and a second electrical connection; a first capacitor pair comprising a first capacitor and a second capacitor mounted directly opposite each other on opposite sides of the conductor structure, wherein the first and second capacitors each have a first electrical connector and a second electrical connector having a first electrical capacitance therebetween, and wherein the first and second capacitors each have a first side and a second side opposite the first side; a first connection arrangement connecting the first electrical connector of the first capacitor and the first electrical connector of the second capacitor to the first electrical connection of the conductor structure; and a second connection arrangement connecting the second electrical connector of the first capacitor and the second electrical connector of the second capacitor to the second electrical connection of the conductor structure. The first electrical connectors on the first side of the respective capacitors are aligned on the respective sides of the conductor structure and the second electrical connectors on the first side of the respective capacitors are aligned on the respective sides of the conductor structure.
A power module (1) providing a half bridge, the power module including: at least one substrate (2) including an inner load track (3), two intermediate load tracks (4) and two outer load tracks (5), each of which load tracks is elongated and extends substantially across the at least one substrate (2) in a first direction (6); wherein the two intermediate load tracks (4) are arranged adjacent to the inner load track (3), and each outer load track (5) is arranged on the opposite side of one of the two intermediate load tracks (4) with respect to a second direction (7) substantially orthogonal to the first direction (6).
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 23/00 - Details of semiconductor or other solid state devices
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H02M 7/537 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
38.
Pressure sintering device and method for manufacturing an electronic component
A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/32 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
39.
POWER ELECTRONIC MODULE COMPRISING A GATE-SOURCE CONTROL UNIT
A power electronic module (2) comprising at least one semiconductor switch (4) and a gate-source control unit is disclosed. The gate-source control unit comprise an asymmetric transient voltage suppressor (TVS) diode (8) or two Zener diodes (10, 10') or one or more avalanche diodes arranged between the gate terminal (G) and the source terminal (S) of the semiconductor switch (4).
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H03K 17/0416 - Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
H03K 17/16 - Modifications for eliminating interference voltages or currents
40.
ELECTRONIC MODULE AND METHOD FOR CONNECTING SEVERAL CONDUCTORS TO A SUBSTRATE
A method for connecting two or more conductors with connection pads to a substrate, comprising the steps of: placing a first connection pad of a first conductor and a second connection pad of a second conductor such that the first connection pad is arranged between the second connection pad and the substrate and subsequently carrying out a welding process, in which the second connection pad and the first connection pad are welded to each other and to the substrate.
A molded semiconductor power module (2) is disclosed. The power module (2) comprises a busbar that comprises at least two laminated conducting tracks (6, 6', 6''). At least two of the conducting tracks (6, 5 6', 6'') extend through the molded surface (8) of the power module (2) to form connection areas (10, 10', 10''). Each connection area (10, 10', 10'') is insulated from the other connection area(s) (10, 10', 10'') by an insulating mold material (12).
The invention relates to an electronic power system (1) comprising at least one electronic power module (2). The electronic power module (2) comprises a base plate (3) and at least one heat generating component arranged on a first side of the base plate (3). The electronic power module (2) comprises a cooling structure (4) transporting heat away from the electronic power module (2) via a coolant that is guided by the cooling structure (4). The cooling structure (4) is arranged on a second side (5) of the base plate (3) opposite to the first side. Task of the invention is to provide an electronic power system (1) with an improved cooling. According to the present invention this task is solved in that the cooling structure (4) is integrally formed with the base plate (3).
An apparatus is described comprising: a baseplate; an AC busbar mounted on the baseplate; a DC busbar comprising an upper DC busbar, a lower DC busbar and an insulating material therebetween, wherein the DC busbar is mounted such that the lower DC busbar is mounted to the baseplate and wherein the upper DC busbar comprises one of more openings through which the lower DC busbar is exposed; a first group of switching components mounted on the AC busbar, wherein the first group of switching components are connected to the upper DC busbar using first electrical connection means; and a second group of switching components mounted on the lower DC busbar, wherein at least one of the switching components of said second group of switching components is mounted within one of said openings, wherein the second group of switching components are to the AC busbar using second electrical connection means.
A mold tool 1 is described for molding a semiconductor power module having an electrical contact pin 2 which includes an electrical contact portion 3 for contacting a substrate 4 with another electrical component. The pin 2 comprises a protruding portion 5 being a top-sided pin connector. The mold tool 1 includes a first 6 and a second mold die which, when brought together for molding, form a cavity to be filled with a mold compound for encapsulating electrical components of the semiconductor power module, and a recess 7 in the first die 6 which communicates with the cavity within the second die. The recess 7 is filled with a cushion-like soft material 8 into which the top-sided pin connector is pushed thereinto and completely surrounded by the soft material so that a sealing means is formed that prevents any contamination of the electrical contact portion 3 of the pin 2 by the molding compound introduced into the cavity. Furthermore, a method of manufacturing such a semiconductor power module is described.
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
B29C 45/14 - Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mouldApparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
A method of assembling a semiconductor component is described, wherein the semiconductor component comprises a substrate and one or more components mounted on the substrate, the method comprising: placing an electrical connection structure on the substrate of the semiconductor component and/or on one or more of the one or more components of the semiconductor component; using a molding press to apply pressure to the electrical connection structure, the substrate and the one or more components of the semiconductor component; and introducing a molding compound into the molding press, thereby encapsulating the semiconductor component.
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A semiconductor power module is described comprising at least one power module component mounted on a substrate, wherein the substrate comprises a first, relatively electrically conducting, portion on which the power module components are mounted and a second, relatively electrically insulating, portion on which the first portion is mounted. The first (relatively conducting) portion of the substrate is mounted on a first surface of the second (relatively insulating) portion and the first portion has a thickness profile that varies in a direction parallel to said first surface.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
H01L 23/373 - Cooling facilitated by selection of materials for the device
47.
FLOW DISTRIBUTOR FOR COOLING AN ELECTRICAL COMPONENT, A SEMICONDUCTOR MODULE COMPRISING SUCH A FLOW DISTRIBUTOR, AND METHOD OF MANUFACTURING THE SAME
A flow distributor (1) is provided for distributing a heat transporting fluid flow (2) of an electrical component across a surface to be cooled and/or heated by the fluid. The distributor includes at least one flow channel configured to direct the fluid flow across the surface, the flow channels being delimited on either side by walls (4) so as to form a path (6) for the fluid flow (2) within the flow channels (3), and comprising wall sections (5) extending into the at least one flow channel (3); and at least one of the wall sections (5) includes at least one bypass passage (7) to connect two adjacent spaces (8) separated by the wall section (5) where the at least one bypass passage (7) extends from one side of the wall section to the other one with an inclined orientation (10) so as to create a short circuit flow (9) for apart of the fluid flow (2). Furthermore, a method of manufacturing such a flow distributor is provided, having an insert with the wall structure of the inventive flow distributor which is manufactured by injection molding or by 3D-printing.
A power module (2) comprising a rigid insulated substrate (10) mounted on a baseplate (4) is disclosed. An additional circuit carrier (6, 8) is mounted on the baseplate (4) adjacent to the rigid insulated substrate (10). The additional circuit carrier (6, 8) has a rigidity which is less than that of the rigid insulated substrate (10).
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
49.
POWER MODULE WITH IMPROVED ELECTRICAL AND THERMAL CHARACTERISTICS
A power module (1) comprising a group of at least three rectangular electrical power components (11, 12, 13, 14, 23, 24, 25, 26) arranged on a substrate (2), wherein in that at least one side (31) of at least one of the rectangular electrical power components (11, 14) is not orthogonal or parallel to a line (3) that passes through the geometric centres of the remaining rectangular electrical power components (12, 13) of the group.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
50.
POWER MODULE WITH IMPROVED ELECTRICAL CHARACTERISTICS
A power semiconductor module (1) comprising; two or more semiconductor switching components (11-14, 64-70, 74-77, 501-504) which are electrically connected in parallel, wherein the first power contacts of each switching component (11-14, 64-70, 74-77, 501-504) are electrically connected to a first track (41, 61, 71), wherein the second power contacts of each switching component (11-14, 64-70, 74- 77, 501-504) are electrically connected to a second track (42, 62, 72) by a connecting means (37, 43, 48, 49, 63), and wherein the ratio R of the maximum linear extent (LI) of the landing area (45) of the connecting means (37, 43, 48, 49, 63) on the second track (42, 62, 72) to the length (L2) of the shortest distance connecting all of the geometric centres of the second power contacts is less and or equal to 70%.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
A power module (2) comprising a plurality of rectangular electrical power components (4, 4') arranged on a substrate (6). The sides of at least a subset of the rectangular electrical power components (4, 4') are not orthogonal to a line (12, 12') that passes through the geometric centre (C) of the rectangular electrical power components (4, 4') of the subset and extends orthogonal to a side (L, M) of the substrate (6).
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
53.
Process and device for low-temperature pressure sintering
Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 23/00 - Details of semiconductor or other solid state devices
H05K 3/32 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
B22F 3/14 - Both compacting and sintering simultaneously
54.
METHOD FOR CONNECTING A FIRST ELECTRONIC COMPONENT WITH A SECOND ELECTRONIC COMPONENT
A method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component and which is characterized by these steps: fastening at least a plurality of metal bodies that are distributed across the area of the surface of one of the electronic components while maintaining the clearances that are disposed between the metal bodies on the electronic component, or fastening a metal body that extends in one plane on the electronic component, wherein the metal body includes sections thereon that are disposed opposite each other while maintaining at least one of the clearances disposed between the sections, application of the sinter material across the area of at least one of the electronic components, and forming an electrically conducting bond between the surface of the electronic component with the plurality of metal bodies thereon and the other electronic component by means of sintering the sinter material.
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
H01L 23/00 - Details of semiconductor or other solid state devices
55.
METHOD OF FORMING A COHESIVE CONNECTION BETWEEN A SEMICONDUCTOR WITH AN ALUMINIUM COATED CONTACT SURFACE AND A SHAPED METAL BODY, AS WELL AS A SEMICONDUCTOR MODULE COMPRISING AND A SHAPED METAL BODY COHESIVELY ATTACHED TO A SEMICONDUCTOR
A method of forming a cohesive connection between a semiconductor (20) comprising an aluminium coated contact surface (30) and a shaped metal body (50) comprises the following steps: placing a preform on the contact surface of the semiconductor (20), wherein the preform comprises a dried sinter paste (40) enclosing a metallic structure (60) designed as a metallic grid or wavy metallic structure, placing the shaped metal body (50) on the preform, and processing the assembled components to form the cohesive connection, wherein the processing comprises the step of at least partially removing an oxide layer on the surface of the shaped metal body (50) and/or the contact surface of the semiconductor (20) by moving the metallic structure (60) in contact with the shaped metal body (50) and/or the semiconductor (20) relative to these. The movement of the metallic structure (60) may be at an ultrasonic frequency. The processing may comprise the movement of the shaped metal body (50) relative to the semiconductor (20). The shaped metal body (50) may comprise aluminium or an aluminium alloy, or alternatively copper or a copper alloy. The processing may comprise the application of pressure and/ or temperature. The melting point of the metallic structure (60) may be higher than the melting point of the sinter paste (40). The preform is preferably low temperature melting, with the melting point of the preform being < 230 °C in particular. Highly preferred is a preform made of a low temperature melting metal or a metal alloy, such as SnAg with a melting temperature of 221°C. In particular, the metallic sintered material may be an alloy, preferably an alloy of tin and silver. The destruction of the oxide on aluminium surfaces may lead to the diffusion of the dried sinter paste (40) into the aluminium of the contact surface (30) and the shaped metal body (50), wherein this process can preferably take place at temperatures below the melting point of the dried sinter paste (40). The metallic structure (60) may also be a braided wire.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/485 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
56.
Sintering tool and method for sintering an electronic subassembly
Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).
B23K 3/00 - Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
B22F 3/14 - Both compacting and sintering simultaneously
H01L 23/00 - Details of semiconductor or other solid state devices
B22F 5/00 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
57.
METHOD OF ASSEMBLING A SEMICONDUCTOR POWER MODULE COMPONENT AND A SEMICONDUCTOR POWER MODULE WITH SUCH A MODULE COMPONENT AND MANUFACTURING SYSTEM THEREFOR
A method of assembling a semiconductor power module component 30 and a manufacturing system comprising such a semiconductor power module component and a pressing apparatus 20 for manufacturing a semiconductor power module component are described. The semiconductor power module component 30 comprises at least a first element 1, a second element 2 and a third element 3 arranged in a stack 10. The first element 1 and the second element 2 are joined by sintering in a sintering area 4 and the second element 2 and the third element 3 are joined by soldering in a soldering area 6. The sintering and the soldering are simultaneously executed, wherein the soldering area 6 is heated to a temperature of soldering and the sintering area 4 is heated to a temperature of sintering, the temperature of soldering and the temperature of sintering being harmonized to each other. Pressure is being applied to the stack 10, comprising the at least one soldering area 6 and the at least one sintering area 4 with stabilizing means 7 being arranged in the soldering area 6.
H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups or
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
58.
Semiconductor power module with busbar having a leg with a foot forming an offset angle, and method for manufacturing the busbar
A conducting busbar (2, 4) suitable for use in a semiconductor power module (8) is provided. The busbar (2, 4) comprises a main plate (210, 410), one or more legs (220, 420) extending from the main plate (210, 410), and one or more feet (230, 430) formed at the free end of the legs (220, 420). According to the invention, the intersection line (L) between at least one of the legs (220, 420) and the associated foot (230, 430) forms an offset angle (α) with respect to the longitudinal direction (X) of the main plate (210, 410).
H01L 23/528 - Layout of the interconnection structure
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
The invention comprises a half bridge power assembly comprising one or more power modules attached to a cooled baseplate, wherein at least one power module comprises a substrate on which is mounted a power semiconductor, one or more hollow top contacts, and an encapsulation which covers the power semiconductor and at least partially covers the hollow top contacts and the substrate, and wherein the cooled baseplate comprises a first portion comprising a first metal and a second portion comprising a second metal.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
1. A power module (2) comprising a molded package (4), three power terminals (6, 8, 10) protruding from a first side (40) of the molded package (4) is disclosed. The power terminals (6, 8, 10) include a positive DC terminal (6), a neutral terminal (8) and a negative terminal (10). The power module (2) comprises a phase output power terminal (12) protruding from a second side (42) of the molded package (4). The power module (2) is a three-level power module comprising a plurality of control pins (14, 16, 18, 20, 22, 24, 26, 28, 30, 32, 34, 36) protruding from the second side (42) of the molded package (4).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A lead frame is provided, including one or more power terminals and one or more control terminals, wherein at least one of the control terminals is externally terminated with a press-fit contact member, and wherein at least one of the control terminals and at least one power terminals are formed from different materials. With the disclosed lead frame of the invention, lower material cross sections in the power terminals will be provided because of the better electrical conductivity when using pure copper compared to alloys with higher mechanical strengths. Also specific/different plating could be added to the individual needs of the different pin types without using masks in the plating process.
A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 23/00 - Details of semiconductor or other solid state devices
A power module (1) providing a half bridge, the power module comprising: at least one substrate (2) comprising an inner load track (3), two intermediate load tracks (4) and two outer load tracks (5), each of which load tracks is elongated and extends substantially across the at least one substrate (2) in a first direction (6); wherein the two intermediate load tracks (4) are arranged adjacent to the inner load track (3), and each outer load track (5) is arranged on the opposite side of one of the two intermediate load tracks (4) with respect to a second direction (7) substantially orthogonal to the first direction (6).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
A power module (1) providing a half bridge, the power module comprising: at least one substrate (2) comprising an first inner load track (11), a second inner load track (12), a third inner load track (14), a fourth inner load track (15), a first outer load track (10) and a second outer load track (13); wherein each outer load track is elongated and extends substantially across the at least one substrate in a first direction.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
65.
SEMICONDUCTOR MODULE COMPRISING A SEMICONDUCTOR BODY ELECTRICALLY CONTECTED TO A SHAPED METAL BODY, AS WELL AS THE METHOD OF OBTAINING THE SAME
Semiconductor module comprising a semiconductor and comprising a shaped metal body (30) that is electrically contacted by the semiconductor (10), for forming a contact surface for an electrical conductor (40), wherein the shaped metal body (30) is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor (40) on a semiconductor body (10), said method comprising the steps of: fastening a bent or folded shaped metal body (30) of a constant thickness to the semiconductor body (10) by means of a first fastening method and then fastening the electrical conductor (40) to the shaped metal body (30) by means of a second fastening method.
A semiconductor module comprises a first substrate (10), a second substrate (101) and a spacer (40, 40') distancing the substrates (10, 10') from each other, wherein the spacer (40, 40') is formed by at least one elastic shaped metal body (40, 40'). A semiconductor (20) may be disposed between the first substrate (10) and the second substrate (10'), wherein the semiconductor (20) is firmly bonded to one of the first substrate (10) or the second substrate (10') and the shaped metal body (40, 40') may electrically connect the semiconductor (20) with the other of the substrates (10, 10'). The first substrate (10) and/or the second substrate (10') may be a DCB substrate or may comprise a lead frame. The shaped metal body (40, 40') may be made to be elastic so that the application of pressure in a first direction causes an expansion in a second direction, wherein a plurality of shaped metal bodies (40, 40') may be oriented in different directions with respect to each other. The shaped metal body (40, 40') may be disposed on the semiconductor (20) in a planar way in the plane between the substrates (10, 10'). The shaped metal body (40, 40') may be bent, folded and/or configured to be wavy in cross-section, and may be slotted, in particular transversely to the bent, folded or wavy configuration. The shaped metal body (40, 40') may be a film. The spacer may be formed by at least two elastic shaped metal bodies (40, 40'), with the shaped metal bodies (40, 40') being disposed in the plane between the substrates (10, 10'), connected to each other transversely to this plane. The connection between the semiconductor (20) and the one of the first substrate (10) or the second substrate (10') and the connections between the shaped metal body or bodies (40, 40') and the semiconductor (20) and the other substrate (10, 10') may be made by sintering or by nanowires, or one shaped metal body (40, 40') may be connected to the semiconductor (20) by sintering while the other shaped metal body (40, 40') may be connected to the other substrate (10, 10') by nanowires. The electrically conductive, elastic spacer (40, 40') may break up oxidised surfaces via elastic compensatory movements and thus provide for the electrical connection between the two substrates (10, 10')· In particular, w hen assembling the second (upper) substrate (101) and the first (lower) substrate (10) equipped with semiconductor (20), the waveform of the spacer (40, 40') may be deformed both in the vertical direction and in the lateral direction, wherein the tips of the "wave crests" then glide over the surfaces to be contacted and perform a cleaning effect, so that it is possible to break open oxide layers of aluminium semiconductor metallisations, leading to an electrically and thermally highly conductive connection to the semiconductor (20), without the latter necessarily having to be coated with a noble metal surface.
H01L 23/488 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
The invention relates to a power electronics module comprising a first circuit carrier (5, 10, 11), as well as an electronic assembly (20, 30) arranged in an electrically contacting manner on the upper flat side of the first circuit carrier (5, 10, 11), and a first cooling element (40) in thermal contact with the underside of the first circuit carrier (5, 10, 11), wherein the module has at least one second assembly (20, 30) arranged on the upper side of a second circuit carrier (5, 10, 11) and a second cooling element (40) arranged on the underside of the second circuit carrier (5, 10, 11), wherein the first and the second circuit carriers (5, 10, 11) are arranged with their upper sides facing one another and at least one central heat sink (60, 61, 63, 64) that is electrically insulated from the assemblies (20, 30) is arranged in the space between the assemblies (20, 30), wherein the assemblies (20, 30) and the at least one central heat sink (60, 61, 63, 64) are embedded in a heat-conducting potting compound (50), wherein the module has a number N≥ 3 of circuit carriers (5, 10, 11) with assemblies (20, 30) mounted on their upper sides and cooling elements (40) mounted on their undersides, and the sides having the assemblies (20, 30) and directed towards one another are arranged around the central heat sink (60, 61, 63, 64) forming a shape with an N-sided polygon as a cross-section.
The invention relates to a power electronics module comprising a flat circuit carrier (5) and an electronic assembly (10) arranged in an electrically contacting manner on the upper flat side of the circuit carrier (5) and cooling bodies (20) thermally in contact with the underside of the circuit carrier (5), characterised by a heat-conducting bridge (30) arranged on the upper side of the circuit carrier (5), spanning the assembly (10) and extensively covering same, wherein the heat-conducting bridge (30) is in thermal contact with the cooling body (20) at mounting points arranged next to the assembly (10) and the space between the heat-conducting bridge (30) and the circuit carrier (5) is filled with a heat-conducting potting compound (50).
A semiconductor module (2) is disclosed. The semiconductor module (2) comprises a shaped metal body (20) fixed to an upper surface of a semiconductor (26) having a lower surface that is connected by sintering onto a top layer (S') of a substrate (4). The shaped metal body (20) comprises a top surface (30) provided with surface structuring (32) that increases the surface area of the top surface (30). The semiconductor module (2) enables an improved cooling solution and thus makes it possible to improve the volumetric power density.
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
70.
METHOD FOR MAKING A COHESIVE CONNECTION BY FLUXLESS CHIP- OR ELEMENT SOLDERING, GLUING OR SINTERING USING A MATERIAL PREFORM
A method (100) for making a cohesive connection of a first component (1) (e.g., a DCB (Direct Copper Bonding) substrate) of a power semiconductor module to a second component (2) (e.g., an electronic component, in particular a semiconductor) of the power semiconductor module comprises the steps of: applying (101) a bonding material preform (14) to a bonding surface (3) of the first component (1), the bonding material preform (14) comprising a first surface (7) to be placed on the bonding surface (3) of the first component (1) and a second surface (6), opposite the first surface (7), which comprises one or more locating structures (13, 15, 16) suitable for locating the second component (2); arranging (103) the second component (2) on the surface (6) of the bonding material preform (14) opposite to the surface facing the first component (1) and located using the locating structures (13, 15, 16); and processing (104) (e.g., by heating and/or applying pressure) the complete area of the bonding material (9). The locating structures (13, 15, 16) ensure that the second component (2) is accurately and firmly retained in position in relation to the bonding material preform (14). The locating structures (13, 15, 16) may comprise a raised wall (15) or raised indexes (16) protruding from the otherwise substantially flat second surface of the bonding material preform (14). The bonding material preform (14) may be formed by preparing (105) a flat bonding material preform (4) and modifying (106) the flat material preform (4) to form a material preform (14) comprising one or more locating structures (13) suitable for locating the second component (2). The method may comprise, after applying the material preform (4, 14) to the bonding surface of the first component (1), a step of fixing (102) the material preform (4, 14) to the first component (1) by heating in a locally delimited partial area (5) of the material preform, wherein the heating may be provided by a laser (17) or by a heating probe (8). The bonding material (9) may be a sintering material, a solder, an organic foil or a thermosetting adhesive. The material preform (14) may comprise a stabilizing means (30), which keeps a specific gap between the surfaces being connected during the period when the material of the material preform (14) is at a raised temperature and may therefore be in a liquid state. This may be the case if the method is used to simultaneously connect a plurality of surfaces in a single stack but using material preforms (4, 14) of differing materials, such as a sintering material and a solder material. The stabilizing means (30) may be solid spacer means (e.g., substantially spherical bodies made of metal (in particular copper), glass or ceramics, or a wire mesh, in particular made of metal (in particular copper)) which are incorporated in a soldering material preform (14). It is also possible to arrange a distribution of the stabilizing means (30) within the material preform (14) to ensure a separation between the finally connected surfaces which is constant, or which is at an angle, for example increases across the surface from one side to another, e.g. when the stabilizing means (30) comprises a copper wire mesh.
H01L 23/488 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/58 - Mounting semiconductor devices on supports
71.
PRESSURE SINTERING DEVICE AND METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT BY A PRESSURE-ASSISTED LOW-TEMPERATURE SINTERING PROCESS
A method for manufacturing an electronic component (34, 34', 34") by a pressure-assisted low-temperature sintering process, by using a pressure sintering device (2) having an upper die (4) and a lower die (6) is disclosed. The upper die (4) and/or the lower die (6) is provided with a first pressure pad (10, 10", 10"', 210, 210", 210"'). The method comprises the following steps: placing a first component (26) on a first sintering layer (24) provided on the top layer (22) of a first substrate (20+12+22), intended to form a first electronic component (34); placing, in a level above or below the to-be-formed first electronic component (34), at least a second component (26', 26") on a second sintering layer (24", 24"") provided on a top layer (22', 22") of a second substrate (20'+12'+22', 20" + 12"+22"), intended to form a second electronic component (34', 34"); placing a second pressure pad (10', 10", 10'", 10"", 10''''', 210', 210", 210'", 210"", 210''''') between the to-be-formed first electronic component (34) and second electronic component (34', 34"); and joining the first component (26) and the top layer (22) of the first substrate (20+12+22) by means of the first sintering layer (24) to form the first electronic component (34) as well as joining the second component (26', 26") and the top layer (22', 22") of the second substrate (20' + 12'+22', 20" + 12"+22") by means of the second sintering layer (24", 24"") to form the second electronic component (34', 34"), by pressing the upper die (4) and the lower die (6) towards each other, wherein the sintering device (2) is simultaneously heated. The method may further comprise a step of covering the first component (26) with a first protective foil (18) arranged to be brought into engagement with the first pressure pad (10, 210). The method may also comprise a step of covering the second component (26', 26") with a second protective foil (18', 18"). One or more of the pressure pads (10, 10', 10", 10'", 10"", 10''''') may be deformable pressure pads (210, 210', 210", 210'", 210"", 210'''''), which may comprise a fluid contained in an enclosure. A plate (36, 36') may be arranged between adjacent electronic components (34, 34', 34"), wherein the plate (36) may be provided with heating elements (32') or the plate (36, 36') may be heated by induction means (232). The first electronic component (34, 34', 34") or the second electronic component (34, 34', 34") may comprise a baseplate (28, 28', 28"), which may function as the additional pressure pad. The first and second electronic components (34, 34', 34") may be double-sided electronic components comprising an insulation (12, 12', 12") having a top surface provided with a first sintering layer (24, 24", 24'") onto which a first component (26, 26", 26"') is placed and having an underside surface provided with a second sintering layer (24', 24'") onto which a second component (26', 26'") is arranged.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/98 - Assembly of devices consisting of solid state components formed in or on a common substrateAssembly of integrated circuit devices
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H05K 3/32 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
A power module (2) comprising a first power switching member (4, 4') arranged on a power electronic substrate (18) is disclosed. The power module (2) comprises a plurality of control connectors (20, 21, 23, 24) and the first power switching member (4, 4') comprises a gate terminal (G, G')· The power module (2) comprises an additional switching member (10, 10', 30) being configured to reduce the gate terminal (G, G') impedance during the turn-off event.
H03K 17/16 - Modifications for eliminating interference voltages or currents
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H03K 17/06 - Modifications for ensuring a fully conducting state
The present disclosure provides a busbar (100), comprising: an insulating body (110); and a busbar conductor (120, 130, 140) comprising a conductor body partially encapsulated by the insulating body and a connection terminal (121, 131, 141) extending from the conductor body and configured for connecting an electrical device, and a portion of the connection terminal is surrounded by an insulating structure (10). The present disclosure further provides a power module (200) comprising the busbar and a method of manufacturing a busbar.
A semiconductor module having a semiconductor and a housing (100) enclosing the semiconductor, wherein the housing is made of an electrically conductive material and has a recess (30) occupied by the semiconductor, wherein the side of the semiconductor opposite the recess (30) is coplanar with the surface of the housing (100) having the recess (30). The housing (100) may have an opening which communicates with the recess (30) to make the control terminal of the semiconductor accessible from outside the housing (100). The control terminal may be connected to the corresponding control terminal on a substrate (200) through a bond wire (300).
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
75.
ASSEMBLY FOR SINTERING AN EL. MODULE WITH A SINTERING DEVICE COMPRISING A BOTTOM PUNCH AND A TOP PUNCH, AN EL. MODULE ARRANGED ON THE BOTTOM PUNCH, AND A SEPARATING FILM COMPRISING A METAL ARRANGED BETWEEN THE TOP PUNCH AND THE EL. MODULE
An assembly for sintering of an electronic module (2+1+3+4+5) comprises a sintering device with a bottom punch (13) and a top punch (7), an electronic module (2+1+3+4+5) arranged on the bottom punch (13) and a separating film (6) arranged between the top punch (7) and the electronic module (2+1+3+4+5), wherein the separating film (6) comprises a metal. The electronic module (2+1+3+4+5) may consist of a substrate (2+1) comprising two copper layers (1) and a ceramic layer (2) arranged between the copper layers (1) and of a semiconductor (3) with electrical contacts (4, 5) arranged on the upper copper layer (1). The separating film (6) may comprise a layer comprising the metal, facing the electronic module (2+1+3+4+5). The separating film (6) may also have a coating (12) of the metal, arranged on a carrier (11), such as a plastic film (e.g., poly-tetrafluoroethylene (PTFE) or polyimide (PI)). The metal may be gold, silver, platinum or another noble metal and is preferably aluminium, resulting in a cost-effective, recyclable material. The metal film may be interlaced similarly to a crepe paper, on the surface facing the semiconductor (3+4+5), which improves the heat transfer of the punch heat to the substrate (2+1) and distributes, free from pressure peaks, the quasi-hydrostatic pressure on the surfaces to be sintered. The separating film (6) may also have a plurality of slits (9) perforating the separating film (6), preferably arranged outside of the semiconductor (3+4+5) and adjacent to the edge of the separating film (6), reducing any mechanical stress on the separating film (6) in the area of the semiconductor edges and preventing the separating film (6) from tearing.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/603 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
An electric device, comprising: a power module having a circuit carrier on which a circuit component is disposed; a cooling structure; and an intermediate structure disposed between the circuit carrier and the cooling structure, wherein the cooling structure is made of a first metal material, and the intermediate structure is made of a second metal material having a higher thermal conductivity than that of the first metal material.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 23/373 - Cooling facilitated by selection of materials for the device
A power electric module comprising a casing with electrical components mounted therein and having at least two electric conductors for conducting electric current at differing electrical potentials between an outside of the casing and the electrical components. Each of the electrical conductors is at least partially powder-coated with a thermo-stable resin for electric insulation and comprises at least one terminal which protrudes from the casing to outside. The at least one terminal is hole-free and able to be electrically connected permanently to terminals of other electronic devices by means of material bonding.
H05K 7/14 - Mounting supporting structure in casing or on frame or rack
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
78.
MOLD TOOL FOR MOLDING A SEMICONDUCTOR POWER MODULE WITH TOP-SIDED PIN CONNECTORS AND METHOD OF MANUFACTURING SUCH A SEMICONDUCTOR POWER MODULE
A mold tool (1) is described for molding a semiconductor power module having an electrical contact pin (2) which comprises an electrical contact portion (3) for contacting a substrate (4) with another electrical component. The pin (2) comprises a protruding portion (5) being a top-sided pin connector. The mold tool (1) comprises a first (6) and a second mold die which, when brought together for molding, form a cavity to be filled with a mold compound for encapsulating electrical components of the semiconductor power module, and a recess (7) in the first die 6 which communicates with the cavity within the second die. The recess (7) is filled with a cushion-like soft material (8) into which the top-sided pin connector is pushed thereinto and completely surrounded by the soft material so that a sealing means is formed that prevents any contamination of the electrical contact portion (3) of the pin (2) by the molding compound introduced into the cavity. Furthermore, a method of manufacturing such a semiconductor power module is described.
B29C 45/14 - Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mouldApparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
B29L 31/34 - Electrical apparatus, e.g. sparking plugs or parts thereof
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
79.
FLOW DISTRIBUTOR FOR COOLING AN ELECTRICAL COMPONENT, A SEMICONDUCTOR MODULE COMPRISING SUCH A FLOW DISTRIBUTOR, AND METHOD OF MANUFACTURING THE SAME
A flow distributor (1) is provided for distributing a heat transporting fluid flow (2) of an electrical component across a surface to be cooled and/or heated by the fluid. The distributor comprises at least one flow channel configured to direct the fluid flow across the surface, the flow channels being delimited on either side by walls (4) so as to form a path (6) for the fluid flow (2) within the flow channels (3), and comprising wall sections (5) extending into the at least one flow channel (3); and at least one of the wall sections (5) comprises at least one bypass passage (7) to connect two adjacent spaces (8) separated by the wall section (5) where the at least one bypass passage (7) extends from one side of the wall section to the other one with an inclined orientation (10) so as to create a short circuit flow (9) for apart of the fluid flow (2).Furthermore, a method of manufacturing such a flow distributor is provided, having an insert with the wall structure of the inventive flow distributor which is manufactured by injection molding or by 3D-printing.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
B33Y 80/00 - Products made by additive manufacturing
F28F 3/12 - Elements constructed in the shape of a hollow panel, e.g. with channels
80.
Electronic power system and method for manufacturing the same
The invention relates to an electronic power system (1) comprising at least one electronic power module (2). The electronic power module (2) comprises a base plate (3) and at least one heat generating component arranged on a first side of the base plate (3). The electronic power module (2) comprises a cooling structure (4) transporting heat away from the electronic power module (2) via a coolant that is guided by the cooling structure (4). The cooling structure (4) is arranged on a second side (5) of the base plate (3) opposite to the first side. Task of the invention is to provide an electronic power system (1) with an improved cooling. According to the present invention this task is solved in that the cooling structure (4) is integrally formed with the base plate (3).
A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate(40).
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/433 - Auxiliary members characterised by their shape, e.g. pistons
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
82.
METHOD OF ASSEMBLING A SEMICONDUCTOR POWER MODULE COMPONENT, SEMICONDUCTOR POWER MODULE WITH SUCH A MODULE COMPONENT HAVING COMPONENT PARTS SOLDERED TOGETHER AND COMPONENT PARTS SINTERED TOGETHER, AS WELL AS MANUFACTURING SYSTEM THEREFOR
A method of assembling a semiconductor power module component (30) and a manufacturing system comprising such a semiconductor power module component and a pressing apparatus (20) for manufacturing a semiconductor power module component are described. The semiconductor power module component (30) comprises at least a first element (1) (e.g. a semiconductor chip), a second element (2) (e.g. a substrate, such a DCB substrate) and a third element (3) (e.g. a base plate) arranged in a stack (10). The first element (1) and the second element (2) are joined by sintering in a sintering area (4) and the second element (2) and the third element (3) are joined by soldering in a soldering area (6). The sintering and the soldering are simultaneously executed, wherein the soldering area (6) is heated to a temperature of soldering and the sintering area (4) is heated to a temperature of sintering, the temperature of soldering and the temperature of sintering being harmonized to each other. Pressure is being applied to the stack (10), comprising the at least one soldering area (6) and the at least one sintering area (4) with stabilizing means (7) such as bumps on a surface of the second element (2) or third element (3), solid spacer means incorporated in a solder perform (8) or a wire mesh incorporated in a solder preform (8) being arranged in the soldering area (6). Additional component parts (14, 15) may be sintered onto the first element and/or the second element simultaneously with the sintering and the soldering of the stack (10). The pressure may be applied by a soft cushion-like element (23) surrounding component parts (1, 2, 3, 14, 15) of the module (30).
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/367 - Cooling facilitated by shape of device
H01L 21/603 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/049 - ContainersSeals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
H01L 23/053 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 23/24 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel, at the normal operating temperature of the device
H01L 23/46 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids
83.
BUSBAR, METHOD FOR MANUFACTURING THE SAME AND POWER MODULE COMPRISING THE SAME
A conducting busbar (2, 4) suitable for use in a semiconductor power module(8)is provided. The busbar (2, 4) comprises a main plate (210, 410), one or more legs (220, 420) extending from the main plate (210, 410), and one or more feet (230, 430) formed at the free end of the legs (220, 420). According to the invention, the intersection line (L) between at least one of the legs (220, 420) and the associated foot(230, 430)forms an offset angle (α) with respect to the longitudinal direction(X)of the main plate (210, 410).
09 - Scientific and electric apparatus and instruments
11 - Environmental control apparatus
Goods & Services
Heat exchangers being parts of machines Electronic power switching and power controlling modules for electronic motors primarily composed of power switches and electronic controllers for electronic motors Heat exchangers, not being parts of machines
86.
POWER MODULE HAVING FEATURES FOR CLAMPING AND POWER MODULE ASSEMBLY
A power module (200) is disclosed. The power module (200) comprises: a base plate (210); an electronic component (230) mounted on a top surface of the base plate (210); and a body (220) encapsulating the electronic component (230) and the base plate (210). The body (220) is configured or designed such that a part of the top surface of the base plate (210) is externally accessible. A power module assembly comprising at least one power module (200) is also disclosed. The power module assembly further comprises: a substrate (400) on which the power module (200) is disposed; and at least one clamping device (300) configured for clamping on the part of the top surface of the base plate (210) and fixing the power module (200) to the substrate (400).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
An electric device, comprising: a power module having a circuit carrier on which a circuit component is disposed; a cooling structure; and an intermediate structure disposed between the circuit carrier and the cooling structure, wherein the cooling structure is made of a first metal material, and the intermediate structure is made of a second metal material having a higher thermal conductivity than that of the first metal material.
The present disclosure provides a busbar (100), comprising:an insulating body (110); and a busbar conductor (120, 130, 140) comprising a conductor body partially encapsulated by the insulating body and a connection terminal (121, 131, 141) extending from the conductor body and configured for connecting an electrical device, and a portion of the connection terminal is surrounded by an insulating structure (10). The present disclosure further provides a power module (200) comprising the bus bar and a method of manufacturing a busbar.
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/11 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass
H02B 1/20 - Bus-bar or other wiring layouts, e.g. in cubicles, in switchyards
09 - Scientific and electric apparatus and instruments
11 - Environmental control apparatus
Goods & Services
Heat exchangers [parts of machines]. Electronic power switching and power controlling modules, especially power modules for electronic motors. Heat exchangers, not parts of machines.
Power semiconductor module having an external electrical connection and a shunt resistor, characterized in that the shunt resistor is integrated into the external electrical connection.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
09 - Scientific and electric apparatus and instruments
11 - Environmental control apparatus
Goods & Services
Heat exchangers [parts of machines]. Electronic power switching and power controlling modules, especially power modules for electric motors. Heat exchangers, not parts of machines.
92.
ARRANGEMENT FOR PRODUCING AN ELECTRONIC ASSEMBLY BY SINTERING
An assembly for producing an electronic assembly by sintering, comprising a lower sintering tool (30) having a recess (32) for receiving an electronic assembly (20) to be produced by sintering, an upper sintering tool (40) for exerting a pressure directed against the lower sintering tool, and a protective film (50) arranged between the lower sintering tool and the upper sintering tool covering at least the recess of the lower sintering tool, characterized in that the protective film is perforated (52) to allow the feeding of a protective gas to the surface of the electronic assembly (20).
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
93.
Electronic sandwich structure with two parts joined together by means of a sintering layer
An electronic sandwich structure which has at least a first and a second part to be joined, which are sintered together by means of a sintering layer. The sintering layer is formed as a substantially uninterrupted connecting layer, the density of which varies in such a way that at least one region of higher density and at least one region of lower density alternate with one another. A method for forming a sintering layer of an electronic sandwich structure, in which firstly a sintering material layer is applied substantially continuously to a first part to be joined as a connecting layer, this sintering material layer is subsequently dried and, finally, alternating regions of higher density and of lower density of the connecting layer are produced by sintering the first part to be joined with the sintering layer on a second part to be joined.
The present invention relates to a 3-level power module (6) comprising a baseplate (8), a 3-level inverter circuit (1a), the 3-level inverter circuit (1a) being arranged on the baseplate (8), and a phase output connector (9a). The object of the invention is to provide a compact 3-level multi-phase power module (6). The object is solved when the 3-level power module (6) further comprises one or more further 3-level inverter circuits, each being arranged on the baseplate and each being connected to a corresponding further phase output connector (9b, 9c) of the 3-level power module (6).
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H02P 27/14 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters with pulse width modulation with three or more levels of voltage
H02M 7/483 - Converters with outputs that each can have more than two voltage levels
A method for manufacturing semiconductor chips (2, 3) having arranged thereon metallic shaped bodies (6), having the following steps: arranging a plurality of metallic shaped bodies (6) on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (6), exhibiting a first connection material (4) and a second connection material (5), and processing the first connection material (4) for connecting the metallic shaped bodies (6) to the semiconductor wafer without processing the second connecting material (5), wherein the semiconductor chips (2, 3) are separated either prior to arranging the metallic shaped bodies (6) on the semiconductor wafer or after processing the first connection material (4).
The present invention discloses a power semiconductor module, comprising: a substrate; a semiconductor provided on a top side of the substrate; and a package formed on the semiconductor and the substrate, wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside.
The invention relates to an electronic power system (1) comprising at least one electronic power module (2). The electronic power module (2) comprises a base plate (3) and at least one heat generating component arranged on a first side of the base plate (3). The electronic power module (2) comprises a cooling structure (4) transporting heat away from the electronic power module (2) via a coolant that is guided by the cooling structure (4). The cooling structure (4) is arranged on a second side (5) of the base plate (3) opposite to the first side. Task of the invention is to provide an electronic power system (1) with an improved cooling. According to the present invention this task is solved in that the cooling structure (4) is integrally formed with the base plate (3).
The present disclosure provides a power module comprising at least two substrates on which one or more semiconductors are mounted, wherein the at least two substrates are connected via a plurality of bond wires, and wherein the plurality of bond wires are optimized to minimize ohmic resistance thereof.
The present disclosure provides a three-level power module comprising sets of one or more pins which are suitable for connecting to a positive Direct Current (DC) potential, a negative DC potential and a neutral potential, wherein at least one of pins suitable for connecting to the positive DC potential and at least one of pins suitable for connecting to the negative DC potential are each placed adjacent to a pin suitable for connecting to the neutral potential.
The present disclosure provides a three-level power module comprising at least one substrate on which one or more semiconductor switches are mounted, wherein the one or more semiconductor switches are wide-bandgap semiconductors.
