A reconstituted wafer product includes diamond dies sandwiched between a first wafer and a second wafer in a manner that provides a thermally conductive connection between the first wafer and second wafer through the diamond dies. At least one of the first wafer and second wafer includes pockets containing one or more diamond dies. An alternative reconstituted wafer product may include diamond dies attached to a silicon wafer in a manner that provides a thermally conductive connection between the wafer and the diamond dies, wherein the silicon wafer is bonded to the dies in areas that include one or more areas of recrystallized silicon.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
2.
Single Crystal Diamond Dies Packaged with Ultrathin Pocketed Semiconductor Wafer
A low thermal resistance device package and heatsink assembly may include a device package containing one or more logic elements with the logic elements thermally connected to one or more diamond dies in a manner that provides a thermally conductive connection between the logic elements through the one or more diamond dies and one or more heatsinks. Each heatsink contains one or more chambers configured for a fluid heat transfer medium. A reconstituted wafer product may include a plurality of diamond dies attached to at least a first wafer in a manner that provides a thermally conductive connection between the first wafer and the dies containing diamond. The first wafer may be a 300 millimeters sized wafer and the diamond dies may include four sector dies arranged in four sectors of the 300 millimeters sized wafer.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/467 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing gases, e.g. air
3.
RECONSTITUTED WAFER PRODUCT WITH VARIABLE THICKNESS DIES CONTAINING DIAMOND
A reconstituted wafer product may include a plurality of die structures bonded to a wafer in a manner that provides a thermally conductive connection between the wafer and the plurality of die structures. The wafer is compatible with semiconductor processing. Each die structure may include a die containing diamond bonded to a heatsink-side surface of the wafer. Two or more dies containing diamond in the plurality of die structures are of different thickness.
A reconstituted wafer product may include dies containing diamond sandwiched between first and second wafers in a manner that provides a thermally conductive connection between the first wafer and second wafer through the dies containing diamond. Alternatively, dies containing diamond may be attached to a tape in frame or temporary carrier substrate or tape on reel carrier substrate. Alternatively, dies containing diamond may be attached to a wafer in a manner that provides a thermally conductive connection between the wafer and the dies containing diamond. A first smoothening layer may be formed on a first side of the dies between the wafer and the dies. A second smoothening layer may be formed on a second side of the dies with the dies containing sandwiched between the first and second smoothening layers.
A device package and heatsink assembly includes a device package containing one or more logic elements and one or more other integrated circuit devices mounted to a package substrate and one or more heatsinks. The other integrated circuit devices are higher above the package substrate's surface than the logic elements. Each heatsink contains chambers for a fluid heat transfer medium. A surface of the logic elements is thermally coupled to the fluid. A semiconductor chip package fabrication method includes bonding a diamond-containing dielet to a semiconductor logic die to form a logic die structure; mounting the logic die structure to a package substrate with the logic die sandwiched between the dielet and the substrate, exposing a surface of the dielet; and mounting one or more other integrated circuit devices to the package substrate. The other integrated circuit devices are higher above the package substrate's surface than the logic die structure.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
H10D 80/30 - Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups , e.g. assemblies comprising integrated circuit processor chips
6.
DIRECT DIFFUSION BONDING OF MATERIALS WITH SURFACE TREATMENT
A composition of matter includes a diamond substrate and a second substrate material. An interfacial region formed between the diamond substrate material and the second material substrate wherein the interfacial region incorporates transition metal atoms and diffusion barrier metal atoms are integrated with at least a crystal structure of the diamond substrate.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
7.
COMPOSITE THERMAL HOTSPOT MANAGEMENT IN DIE PACKAGING
A device package includes a diamond heat spreader and a filler material bonded to a first side of the diamond heat spreader. A first integrated circuit (IC) device coupled to a second side of the diamond heat spreader opposite the filler material. A second IC device wherein a first side of the filler material opposite of a side bonded to the heat spreader shares a horizontal plane with a top side of the second IC device.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H05K 1/14 - Structural association of two or more printed circuits
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/367 - Cooling facilitated by shape of device
G06T 1/20 - Processor architecturesProcessor configuration, e.g. pipelining
8.
COMPOSITE THERMAL HOTSPOT MANAGEMENT IN DIE PACKAGING
A device package includes a diamond heat spreader and a filler material bonded to a first side of the diamond heat spreader. A first integrated circuit (IC) device coupled to a second side of the diamond heat spreader opposite the filler material. A second IC device wherein a first side of the filler material opposite of a side bonded to the heat spreader shares a horizontal plane with a top side of the second IC device.
H01L 23/427 - Cooling by change of state, e.g. use of heat pipes
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
H10D 80/30 - Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups , e.g. assemblies comprising integrated circuit processor chips
9.
Electronic Device Component with Improved Thermal Characteristics
An integrated device component having improved thermal characteristics includes a semiconductor device, a layout layer disposed on the semiconductor package; and a wafer located on top of the layout layer. The wafer is composed of a material chosen to be electrically resistive and have a uniform thermal conductivity in a lateral and transverse direction of greater than or equal to 1900 watts per Meter Kelvin with a variation over the surface of the substrate of plus or minus 1 degree Celsius.
An integrated circuit (IC) may include a semiconductor material having a thickness of 100 microns or less. The semiconductor material having a major surface. One or more IC devices are formed in the semiconductor material proximate the major surface. One or more diamond layers having a thickness less than 500 microns are disposed on the major surface of the semiconductor material.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
A method of making an integrated circuit device with a diamond heat spreader including one or more integrated circuit (IC) devices in a semiconductor material and bonding one or more diamond layers. A device may comprise one or more integrated circuit (IC) devices in a semiconductor material thinner than 100 micrometers and one or more diamond layers of thickness up to 2000 micrometers bonded to the semiconductor material.
An integrated device component having improved thermal characteristics includes a semiconductor device, a layout layer disposed on the semiconductor package; and a wafer located on top of the layout layer. The wafer is composed of a material chosen to be electrically resistive and have a uniform thermal conductivity in a lateral and transverse direction of greater than or equal to 1900 watts per Meter Kelvin with a variation over the surface of the substrate of plus or minus 1 degree Celsius.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B32B 37/26 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the laminating process, e.g. release layers or pressure equalising layers
A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.
H10D 62/83 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H10D 12/00 - Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
An electronic component, intermediate stage of production and method of making, comprising a stack having a metallic substrate, a single crystal diamond (SCD) wafer, and a metallic layer is disclosed. A first sintered metal layer forms a bond between the substrate and the SCD wafer, and a second sintered metal layer forms a bond between the SCD wafer and the metallic layer. The metallic layer is thinner than the metallic substrate.
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
B32B 37/26 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the laminating process, e.g. release layers or pressure equalising layers
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups or
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
15.
DIAMOND WAFER BASED ELECTRONIC VEHICLE POWER ELECTRONICS
A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.
C09K 5/14 - Solid materials, e.g. powdery or granular
H02P 3/18 - Arrangements for stopping or slowing electric motors, generators, or dynamo-electric converters for stopping or slowing an individual dynamo-electric motor or dynamo-electric converter for stopping or slowing an AC motor
B60L 50/61 - Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells using power supplied by batteries by batteries charged by engine-driven generators, e.g. series hybrid electric vehicles
16.
Axisymmetric material deposition from plasma assisted by angled gas flow
A film deposition system includes a chamber, a stage disposed in the chamber configured to support a substrate, one or more gas inlet structures configured to supply one or more gases to an interior of the chamber, and one or more microwave-introducing windows that introduce microwave radiation to the chamber to excite the one or more source gases to produce a plasma proximate the stage. The gas inlet structures include one or more angled gas inlets that introduce a plasma-shaping gas flow to the chamber at an angle relative to a symmetry axis of the stage. The plasma-shaping gas flow interacts with the plasma in a way that facilitates axisymmetric deposition of material on a surface of the substrate with the plasma.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
A film deposition system includes a chamber, a stage disposed in the chamber configured to support a substrate, one or more gas inlet structures configured to supply one or more gases to an interior of the chamber, and one or more microwave-introducing windows that introduce microwave radiation to the chamber to excite the one or more source gases to produce a plasma proximate the stage. The gas inlet structures include one or more angled gas inlets that introduce a plasma-shaping gas flow to the chamber at an angle relative to a symmetry axis of the stage. The plasma-shaping gas flow interacts with the plasma in a way that facilitates axisymmetric deposition of material on a surface of the substrate with the plasma.
patents
