The invention relates to a method for manufacturing an insert for a cermet cutting or drilling tool, according to which method (A) at least partially oxidised molybdenum powder or at least partially oxidised tungsten powder, or a mixture of at least partially oxidised molybdenum powder and at least partially oxidised tungsten powder, is added to a mould. (B) A carbon source for forming a formulation is added to the powder present in the mould. (G) Preforming is carried out by compacting the formulation. (D) A sintering heat treatment is applied to the preformed formulation until the molybdenum and/or tungsten is carburised in situ. The invention makes it possible to do away with ferrous binders while maintaining reasonable temperature and pressure conditions.
C22C 29/06 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
C22C 1/051 - Making hard metals based on borides, carbides, nitrides, oxides or silicidesPreparation of the powder mixture used as the starting material therefor
C22C 1/055 - Making hard metals based on borides, carbides, nitrides, oxides or silicidesPreparation of the powder mixture used as the starting material therefor with in situ formation of hard compounds using carbon
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
The invention relates to the improvement of synthesis by chemical vapour deposition, particularly diamond synthesis. It is proposed to reduce the time required for the deposition of diamond layers by compressing the plasma near the deposition substrate in order to increase the chances of collision between active species.
Synthesis methods for performed by chemical vapor deposition are improved, particularly for diamond synthesis. The time required for depositing diamond layers is reduced by compressing the plasma near the deposition substrate to increase the chances of collision between active species.
C23C 16/503 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C23C 16/517 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups
The invention relates to the improvement of the synthesis by chemical vapor deposition, particularly the diamond synthesis. According to the invention, it is proposed to reduce the time required for depositing diamond layers by compressing the plasma near the deposition substrate in order to increase the chances of collision between active species.
C23C 16/517 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups
2 are introduced into the chamber in order to produce in the chamber a gas comprising substances carrying reactive-carbon atoms in the form of unsaturated molecules or radicals from which the synthesis of said material will be performed, and in that the electromagnetic absorption and inelastic diffusion spectra of the solid material to be synthesized are used to take from these spectra the absorption frequencies that contribute to the reactions that lead to the formation of the solid material to be synthesized, and in that energetic rays are produced in the form of a photon beam carrying quantities of energy determined by each of the frequencies corresponding to said absorption and inelastic diffusion frequencies, said photon beam being injected into the plasma where, for energy states of the solid material, an absorption of these photons having the energy corresponding to these energy states is effected by the substances carrying said reactive-carbon atoms.
The invention relates to a method for synthesizing a material by chemical vapor deposition (CVD), according to which plasma is produced in the vicinity of a substrate in a vacuum chamber, and according to which a substance containing carbon and H2 is introduced into the chamber so as to produce a gas in the chamber, said gas including substances containing reactive carbon atoms in the form of radicals or an unsaturated molecule from which the synthesis of said material will be carried out, wherein the electromagnetic absorption and inelastic scattering spectra of the solid material to be synthesized are used to collect, from said spectra, the absorption frequencies which contribute to the reactions leading to the formation of the solid material to be synthesized, and energy beams are produced in the form of a photon beam having amounts of energy, said energy being predetermined by each of the frequencies corresponding to said absorption and elastic scattering frequencies, said photon beam being injected into the plasma, wherein, for energy states of the solid material, said photons having the energy corresponding to said energy states are absorbed by said substance containing reactive carbon atoms.
The invention relates to a method for synthesizing a material by chemical vapor deposition (CVD), according to which plasma is produced in the vicinity of a substrate in a vacuum chamber, and according to which a substance containing carbon and H2 is introduced into the chamber so as to produce a gas in the chamber, said gas including substances containing reactive carbon atoms in the form of radicals or an unsaturated molecule from which the synthesis of said material will be carried out, wherein the electromagnetic absorption and inelastic scattering spectra of the solid material to be synthesized are used to collect, from said spectra, the absorption frequencies which contribute to the reactions leading to the formation of the solid material to be synthesized, and energy beams are produced in the form of a photon beam having amounts of energy, said energy being predetermined by each of the frequencies corresponding to said absorption and elastic scattering frequencies, said photon beam being injected into the plasma, wherein, for energy states of the solid material, said photons having the energy corresponding to said energy states are absorbed by said substance containing reactive carbon atoms.
patents
