The present invention provides: an oxide sintered body comprising a molybdenum oxide as the main component; a sputtering target comprising the sintered body; and an oxide thin film formed therefrom. According to the present invention, by adding a specific metal oxide in an amount in a predetermined range to sinter-resistant molybdenum oxide and niobium oxide, it is possible to simultaneously achieve improved sinterability, high-density characteristics, and thin film uniformity, which is achieved through particle growth control, even when performing non-pressurized sintering.
C04B 35/01 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
A porous base layer includes a base layer body stacked on a membrane electrode assembly (MEA), and a protrusion pattern provided on one surface of the base layer body that faces the membrane electrode assembly, the protrusion pattern being configured to define a guide flow path for guiding a movement of a target fluid between the membrane electrode assembly and the base layer body, obtaining advantageous effect of improving performance and operational efficiency.
B22F 3/22 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor for producing castings from a slip
C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
3.
SINTERED BODY OF MOLYBDENUM OXIDE, SPUTTERING TARGET, AND OXIDE THIN FILM
The present invention provides a sintered body of molybdenum-based oxide, a sputerring target comprising the sintered body, and an oxide thin film formed from same. In the present invention, a particular dopant is added to sinter-resistant molybdenum oxide and niobium oxide within a certain amount range, and thus, even with pressureless sintering, improved sinterability, high-density characteristics, thin film uniformity through particle growth control, and low-reflection and low-resistance characteristics can be ensured at the same time.
C04B 35/495 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
The present invention provides an oxide sintered body comprising molybdenum oxide as a main component, a sputtering target comprising the sintered body, and an oxide thin film formed therefrom. According to the present invention, by adding a predetermined range of a specific (semi)metal oxide to difficult-to-sinter molybdenum oxide and niobium oxide, sinterability improvement and high-density characteristics can be obtained at the same time even when pressure-free sintering is performed.
C04B 35/495 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
The present invention provides an oxide sintered body comprising a molybdenum oxide as a main component, a sputtering target comprising the sintered body, and an oxide thin film formed therefrom. The present invention can improve sinterability and secure high-density characteristics at the same time, even when pressureless sintering is performed, by adding a specific (metalloid or) metal oxide to a sinter-resistant molybdenum oxide and a niobium oxide in a predetermined range.
C04B 35/495 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
The present invention provides a molybdenum oxide sintered compact exhibiting excellent low reflection, chemical resistance and heat resistance, a thin film using the sintered compact, a thin film transistor comprising the thin film, and a display device.
C04B 35/495 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
The present invention provides a thermoelectric conversion module having improved heating performance for the same amount of power through structural improvement, and more specifically provides a thermoelectric conversion module which comprises at least two thermoelectric elements and thus can increase heat conversion efficiency in cooling and heating, and in which cooling and heating of a fluid passing through the inside are carried out in one conduit, wherein the length and/or area of a heating part is/are increased relative to a cooling part to be in a predetermined range, so that the fluid heating performance is improved.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 35/16 - Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
H01L 35/18 - Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth
8.
METAL OXIDE SINTERED BODY CONTAINING MOLYBDENUM OXIDE AS MAIN COMPONENT AND SPUTTERING TARGET COMPRISING SAME
C04B 35/495 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
C04B 35/622 - Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
The present invention provides a thermoelectric conversion module having improved heating performance for the same amount of power through structural improvement, and more specifically provides a thermoelectric conversion module in which cooling and heating of a fluid passing through the inside can both be performed in a single conduit, and at the same time, the length and/or area of a heating part relative to a cooling part is expanded to a predetermined range, thus improving the heating performance of the fluid.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/16 - Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
10.
HEAT CONVERSION DEVICE COMPRISING THERMOELECTRIC ELEMENT
The present invention relates to a heat conversion device comprising a thermoelectric element and, more particularly, provides a heat conversion device having improved drying efficiency as a result of a structural improvement made to a heat conversion device for drying which is used during the manufacture of a washing machine or a drier.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/04 - Structural details of the junction; Connections of leads
11.
THERMOELECTRIC MATERIAL COMPRISING MULTI-LAYERED DIFFUSION BARRIER LAYER, AND THERMOELECTRIC ELEMENT COMPRISING SAME
The present invention relates to a thermoelectric material comprising a multi-layered diffusion barrier layer and to a thermoelectric element comprising same. In particular, by comprising a diffusion barrier layer having a multi-layered structure of at least four layers, the present invention maximizes the diffusion-preventing effect exhibited by each layer and thus can exhibit more superior thermal stability and bonding stability at high temperatures, can be used in a high operating temperature range, and also can improve power output.
H01L 35/20 - Selection of the material for the legs of the junction using inorganic compositions comprising metals only
H01L 35/04 - Structural details of the junction; Connections of leads
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
12.
THERMOELECTRIC MATERIAL COMPRISING MULTI-LAYERED DIFFUSION BARRIER LAYER, AND THERMOELECTRIC ELEMENT PROVIDED WITH SAME
The present invention relates to thermoelectric material comprising a multi-layered diffusion barrier layer and a thermoelectric element provided with same. More specifically, by having a diffusion barrier layer with a multi-layered structure of three or more layers, high bonding strength between electrodes and thermoelectric element and durability at high temperature are assured, and in addition, thermoelectric properties can be improved.
The present invention relates to a porous thermoelectric material including fine pores, a method for producing same, and a thermoelectric element comprising the porous thermoelectric material and thus having improved thermoelectric performance. The present invention allows the size of pores included in a thermoelectric material and the porosity thereof to be easily controlled and, due to the regular pores included in the produced thermoelectric material, does not significantly decrease the electrical conductivity and Seebeck coefficient and yet significantly reduces the thermal conductivity, and thus can improve thermoelectric performance.
The present invention relates to a thermoelectric element and a manufacturing method therefor. In order to strengthen thermal stability and high temperature durability, the present invention provides a thermoelectric element comprising: a first conductive substrate which has a first insulation layer formed on a surface thereof; a second conductive substrate which is disposed to face the first substrate and has a second insulation layer formed on a surface thereof; a first electrode disposed on the first insulation layer; a second electrode disposed on the second insulation layer; a plurality of thermoelectric legs interposed between the first electrode and the second electrode; and a conductive sealing material surrounding the outer peripheral sides of the first conductive substrate and the second conductive substrate.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/04 - Structural details of the junction; Connections of leads
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/18 - Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth
H01L 35/16 - Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
H01L 35/20 - Selection of the material for the legs of the junction using inorganic compositions comprising metals only
15.
METHOD FOR MANUFACTURING BI-TE-BASED THERMOELECTRIC MATERIAL BY USING MICROWAVE SINTERING
The present invention relates to a method for manufacturing a Bi-Te-based thermoelectric material and, more specifically, provides a novel manufacturing method capable of manufacturing a high-density thermoelectric material within a short time by pulverizing, under an inert atmosphere, a metal ribbon having been formed by a rapid solidification process (RSP), and then microwave sintering same in a state in which a predetermined load is applied.
The present invention relates to a thermoelectric element and a solder paste included in the thermoelectric element and, more specifically, provides a thermoelectric element with improved output and improved high-temperature reliability according to a change in the material of a bonding material.
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
H01L 35/14 - Selection of the material for the legs of the junction using inorganic compositions
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
17.
SILVER NANOPARTICLE MANUFACTURING METHOD AND ELECTRICAL CONTACT MATERIAL COMPRISING SILVER NANOPARTICLE MANUFACTURED THEREBY
The present invention relates to a silver nanoparticle manufacturing method using a plasma method, and an electrical contact material comprising a silver nanoparticle manufactured thereby, the manufacturing method comprising the steps of: (S100) charging a silver (Ag) raw material in a metal(loid)-based plasma mold of a reaction chamber; (S200) generating plasma by setting the vacuum level of the reaction chamber to a range of 50 to 400 torr and adjusting an applied power to a range of 7.5 to 18.7 kW, and forming a silver-metal(loid) nanocomposite particle by means of the generated plasma; and (S300) heat-treating the silver-metal(loid) nanocomposite particle.
B22F 9/14 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes using electric discharge
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
H01H 11/04 - Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
18.
METHOD FOR MANUFACTURING SILVER NANOPARTICLES AND ELECTRICAL CONTACT MATERIAL COMPRISING SILVER NANOPARTICLES MANUFACTURED THEREBY
The present invention relates to a method for manufacturing silver (Ag) nanoparticles by using a plasma method and to an electrical contact material comprising the silver nanoparticles. Silver nanoparticles are formed by feeding a silver raw material to a silver-based plasma mold in a reaction chamber and controlling a degree of vacuum and plasma power, whereby the silver nanoparticles can be rapidly manufactured and can be easily controlled in terms of the size and composition thereof.
B22F 9/14 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes using electric discharge
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
H01H 1/023 - Composite material having a noble metal as the basic material
19.
THERMOELECTRIC ELEMENT AND MANUFACTURING METHOD THEREFOR
The present invention relates to a thermoelectric element and a manufacturing method therefor and, more specifically, provided is a thermoelectric element using a metal-based substrate having a plurality of slits so as to ensure thermal stability and high-temperature durability, and have an improved thermoelectric property.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/04 - Structural details of the junction; Connections of leads
H01L 35/16 - Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
H01L 35/18 - Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20.
HIGH-MOBILITY OXIDE SINTERED BODY AND THIN-FILM TRANSISTOR COMPRISING SAME
The present invention provides: an oxide sintered body and a manufacturing method therefor, the oxide sintered body comprising a metal oxide containing indium oxide, tin oxide, zinc oxide, and at least one metal ion (M, here M = Al, Ga, Hf, V), wherein the atomic ratio thereof, represented by (M+Sn)/(M+In+Sn+Zn), is 10-20 at%; and a thin-film transistor formed from the oxide sintered body, thereby enabling the securing of high-mobility properties and the implementation of stability. According to the present invention, a composition of a semiconductor target used as a channel layer of the thin-film transistor is optimized, and thus a high-mobility thin-film transistor property of at least 20 cm/Vs may be secured.
C04B 35/453 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
C04B 35/626 - Preparing or treating the powders individually or as batches
The present invention relates to a method for producing an electrical contact material using a thermal spraying method, and an electrical contact material produced thereby, wherein the production method includes the steps of: (a) preparing a base material and a brazing material; and (b) forming a brazing layer on one or both surfaces of the base material by applying at least one thermal spraying method among plasma spraying, arc spraying, high-velocity oxygen fuel (HVOF) spraying, and laser spraying.
C23C 4/12 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
The present invention relates to silver-carbon nano-composite particles capable of being used as an electrical contact material, a preparation method therefor and an electrical contact material comprising the nano-composite particles. The nano-composite particles comprise: silver (Ag) particles; and carbon fine particles dispersed on the surface and inside of the silver particles.
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
23.
SILVER-CARBON-METAL-BASED NANO-COMPOSITE PARTICLES, PREPARATION METHOD THEREFOR AND ELECTRICAL CONTACT MATERIAL COMPRISING SAME
The present invention relates to silver-carbon-metal-based nano-composite particles capable of being used as an electrical contact material, a preparation method therefor and an electrical contact material comprising the nano-composite particles. The nano-composite particles comprise: silver (Ag) particles; first carbon-based fine particles dispersed on the surface and inside of the silver particles; and second metal, excluding silver (Ag), or metal oxide-based fine particles dispersed on the surface and inside of the silver particles.
B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
B22F 9/14 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes using electric discharge
24.
ELECTRICAL CONTACT MATERIAL AND ELECTRICAL CONTACT COMPRISING SAME
The present invention relates to an electrical contact material applicable to electrical circuit breaker, switchgear, relay, and switch apparatuses and an electrical contact comprising the same, the electrical contact material comprising: a core containing copper (Cu), a first carbonaceous material, and silver (Ag); and a shell encompassing the core and containing Ag and a second carbonaceous material, which is the same as or different from the first carbonaceous material.
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
25.
SPUTTERING TARGET FOR ELECTROMAGNETIC SHIELDING, AND METHOD FOR PRODUCING SAME
The present invention relates to a sputtering target and a method for producing same. The present invention presents as an embodiment a sputtering target which is a target used in a sputtering process, is composed of at least one material among materials having an FCC crystal structure and materials having a BCC crystal structure, and has an electromagnetic shielding capacity of at least 60 dB when formed as a thin film having a thickness of 5 µm using a sputtering process, and presents a method for producing same.
B22F 5/00 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
B22F 3/24 - After-treatment of workpieces or articles
26.
METHOD FOR MANUFACTURING BI-TE-BASED THERMOELECTRIC MATERIAL ACCORDING TO PARTICLE SIZE CONTROL AND BI-TE-BASED THERMOELECTRIC MATERIAL MANUFACTURED THEREBY
The present invention relates to a method for manufacturing a Bi-Te-based thermoelectric material and, more specifically, provides a novel manufacturing method in which a metal ribbon, formed through a rapid solidification process (RSP), is uniformly milled into fine particles by means of a planetary mill, which is a high-energy mill, in an inert atmosphere and then sintered, whereby the reduction of thermal conductivity and the maintenance of a high Seebeck coefficient and electrical conductivity can be achieved through controlling the particle size to improve thermoelectric properties of the thermoelectric material.
B22F 9/04 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
27.
METHOD FOR MANUFACTURING BI-TE-BASED THERMOELECTRIC MATERIAL WITH CONTROLLED DEGREE OF OXIDATION
The present invention relates to a method of preparing a Bi-Te-based thermoelectric material. More specifically, the present invention provides a novel preparation method wherein metal ribbons formed through rapid solidification process (RPS) are pulverized into a predetermined shape and size under an inert atmosphere, followed by sintering, thereby maintaining a reduction in thermal conductivity, a high Seebeck coefficient, and electrical conductivity through the control of the degree of oxidation, thus improving thermoelectric characteristics.
patents
