There is provided a pickup method including adjusting a relative position of an ejector mechanism and a chip in such a manner that a pin is positioned at a first position of the chip, applying a holding force to a holding surface of the ejector mechanism with a tip end portion of the pin being positioned in a retracted position and holding the other surface of a sheet on the holding surface, moving the tip end portion of the pin to the protrusion position, and pushing up the chip with the pin, thereby peeling off part of the chip from the sheet, adjusting the relative position between the ejector mechanism and the chip, in such a manner that the pin is positioned at a second position of the chip different from the first position, thereby enlarging a peel-off region, and picking up the chip.
A method for processing a workpiece is provided which can carry out proper hybrid bonding without causing an oxidation/etching phenomenon at a metal portion of a device even when the method includes cutting by a cutting blade. The method includes forming a protective film at the metal portion exposed at a surface of the workpiece, cutting by a cutting blade while supplying cutting water to the workpiece, and removing the protective film. At the forming the protective film, a protective film forming solution containing an anticorrosive is supplied, thereby forming a protective film on the metal portion.
A calculating method of calculating a shape of a groove formed along a direction parallel to a front surface of a plate-shaped workpiece including positioning a distance measuring unit in such a manner as to face part of the groove of the plate-shaped workpiece, acquiring, with use of the distance measuring unit, information regarding a height of each of two or more of measurement points set in the groove such that positions of the measurement points in a width direction of the groove are different from each other, and calculating the shape of the groove according to the acquired information regarding the height of each of the measurement points.
A processing apparatus including a holding portion with a holding surface to hold a workpiece; a processing unit for processing the workpiece; a first moving portion for relatively moving a processing point of the processing unit and the holding portion in a first direction; a second moving portion for relatively moving the processing point and the holding portion in a second direction that intersects the first direction; an attaching roller extending along the holding surface; a third moving portion for relatively moving the attaching roller and the holding portion; a reinforcing member supporting portion for supporting a reinforcing member; and a control portion for controlling at least the third moving portion and for generating a reinforcing unit in which the reinforcing member supported by the reinforcing member supporting portion and the workpiece held on the holding portion are integrated by the attaching roller.
Provided is a processing method including processing a second workpiece by a second processing tool in a processing apparatus having a memory in which a determination condition for diagnosing a state at a time of processing is stored, the determination condition being created by, on the basis of a first load value applied to a first workpiece or a first processing tool and first processing information other than the first load value which information is associated with processing of the first workpiece, in the processing the second workpiece by the second processing tool, obtaining a second load value applied to the second workpiece or the second processing tool and second processing information other than the second load value which information is associated with the processing of the second workpiece, and diagnosing a state of the second workpiece being processed by the second processing tool.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
A wafer production method includes: holding the workpiece; forming a separation layer in an outer peripheral region of the workpiece as defined herein; forming a separation layer in an inner region inside the outer peripheral region of the workpiece as defined herein; and separating a plate-shaped object from the workpiece as the wafer with the separation layers formed in the outer peripheral region and the inner region as a start point, and in the forming of the separation layer in the outer peripheral region, the laser beam is applied to the outer peripheral region of the workpiece such that an output of the laser beam at an outer position in the outer peripheral region is higher than an output at an inner position in the outer peripheral region.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
A substrate manufacturing method includes: chamfering an outer peripheral portion of the substrate, which is a boundary between the main surface and the side surface, so as to form at least one of an inclined surface or a curved surface; and polishing the main surface, and the chamfering includes forming, at the outer peripheral portion of the substrate, a first chamfered portion by forming an inclined surface or by forming a curved surface as defined herein, and forming a second chamfered portion by forming an inclined surface or by forming a curved surface as defined herein.
Provided is a processing method of a plate-shaped substrate. The substrate processing method includes forming a bonded substrate by bonding one side of the plate-shaped substrate and one side of a support member that supports the substrate to each other as a bonding portion, forming a modified layer inside the substrate by applying a laser beam to the substrate in an annular pattern, and, after the formation of the modified layer, thinning the substrate. The bonded substrate is formed such that, in the bonding portion, a bonding strength in at least part of an outer circumferential region is made lower than a bonding strength in a central region.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
A substrate manufacturing method includes moving a focused spot and the workpiece relative to each other, while irradiating the workpiece with a laser beam having a wavelength transmissible through a material of the workpiece in such a manner that the focused spot is positioned inside the workpiece, thereby forming a peel-off layer including modified portions in the workpiece, and peeling off part of the workpiece which is to be the substrate from the rest thereof, with the peel-off layer as a separation initiating point, in which an irradiation condition of the laser beam is set such that, when the workpiece is viewed in plan, the peel-off layer having a proportion of the modified portions that is a proportion of an area of the modified portions to an area of the peel-off layer is over 0% and equal to or less than 24% is formed.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
A wafer-processing sheet includes a water-soluble resin layer formed of a water-soluble resin, and a base layer formed of a resin sheet covering one side of the water-soluble resin layer and having tackiness on a surface thereof on a side toward the water-soluble resin layer under a predetermined condition.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
11.
WAFER PROCESSING APPARATUS AND WAFER PROCESSING METHOD
A wafer processing apparatus for performing processing on a bonded wafer, in which a first wafer and a second wafer are bonded, includes a holding table which holds the second wafer of the bonded wafer; a laser beam applying unit which forms a ring-shaped modified layer by positioning a condensing point of a laser beam on an inner side adjacent to a chamfered portion, which is formed at an outer periphery of the first wafer of the bonded wafer held on the holding table, and applying the laser beam; and a fluid supplying unit which supplies fluid that weakens a bonding force to an interface of the chamfered portion in which the first wafer and the second wafer are bonded.
A processing method includes: holding a workpiece on a holding surface of a holding table; processing the workpiece by a grindstone tool; and dressing the grindstone tool by bringing a dressing member into contact with the grindstone tool while feeding the dressing member in a stretching direction, the dressing member containing abrasive grains and linearly stretching.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A method of manufacturing a chip by dividing a wafer, includes first and second division steps. The first step includes pressing, while clamping a first region of a wafer unit by a clamper, a second region of the wafer unit from a back surface side of the wafer or from a front surface side. The wafer unit includes the wafer and a sheet fixed to a back surface of the wafer. The first region of the wafer unit is on one side of a first planned division line of the wafer. The second region is on the opposite side of the first planned division line. The second division step includes pressing the second region of the wafer unit from the back surface side or from the front surface side different from that in the first division step, while clamping the first region of the wafer unit by the clamper.
A chip production method by dividing a substrate having a first surface and a second surface along plural planned dividing lines set in a lattice pattern on the substrate, includes: holding the second surface of the substrate by a holding table such that the first surface of the substrate is exposed; cutting the substrate along each of the planned dividing lines by rotating a cutting blade in a down-cut direction from the first surface toward the second surface while vibrating the cutting blade at a vibration frequency in an ultrasonic band, thereby forming a cutting groove on the first surface that does not reach the second surface; and cutting an uncut portion of the planned dividing line where the cutting groove is formed by rotating the cutting blade in an up-cut direction from the second surface toward the first surface, after the forming of the cutting groove.
A sheet fixing method for fixing a sheet to one surface of an adherend includes forming an adherend unit by fixing the sheet to the one surface of the adherend, after forming the adherend unit, supporting the adherend unit on a table such that another surface of the adherend on a side opposite to the one surface is exposed, after forming the adherend unit, covering at least the adherend in the adherend unit with a cover member, and after supporting the adherend unit on the table and covering the adherend with the cover member, making a pressure in an internal space of the cover member that covers the adherend higher than a pressure in a space outside the cover member.
A laser processing apparatus configured to prevent adhesion of contaminants to an optical element, including: a workpiece holder that holds a workpiece; a laser irradiation assembly including a condenser applying a laser beam onto the workpiece held on the workpiece holder; an X-axis stage drive and a Y-axis stage which each relatively move the workpiece holder and the condenser. The laser irradiation assembly includes an optical component including: a chamber made of a non-magnetic material, constituted of a first end that receives light and a second end that emits light; a holder which holds an optical element to be housed in the chamber; a first magnet coupling connected to the holder; a second magnet coupling disposed outside the chamber and interlocking with the first magnet coupling; and a drive shaft connected to the second magnet coupling, and where the optical element is driven by rotation of the drive shaft.
A wafer processing apparatus includes a holding table that holds a second wafer of the bonded wafer; a laser beam applying unit that forms a ring-shaped modified layer by positioning a condensing point of a laser beam on an inner side adjacent to the chamfered portion, formed on an outer periphery of the first wafer of the bonded wafer held on the holding table, and applying the laser beam; and a fluid supplying unit that supplies fluid weakening a bonding force to an interface of the chamfered portion in which the first wafer and the second wafer are bonded. The fluid supplying unit includes a liquid storage tank, into which the chamfered portion of the bonded wafer is dipped, at an outer periphery of the holding table, such that an upper face of the first wafer is exposed out of the fluid.
A processing method is for a wafer including a first surface and a second surface that is a rear surface of the first surface and having a chamfered portion formed on an outer periphery of the wafer. The processing method includes: irradiating an outer peripheral portion of the wafer with a laser beam to form an annular modified region inside the wafer; and forming a removed portion after the modified region is formed, the removed portion obtained by removing a part of the outer periphery of the wafer from the wafer starting from the modified region. The modified region is formed at a position where a maximum diameter of the wafer after the part is removed and a maximum diameter of the wafer before the part is removed do not differ.
A laser processing machine for processing a workpiece is provided. This laser processing machine includes a holding mechanism configured to hold the workpiece, an irradiation unit configured to apply a laser beam to the workpiece held on the holding mechanism, an ejection unit configured to eject rinse liquid against the workpiece held on the holding mechanism, a recovery unit configured to recover the rinse liquid ejected against a front surface of the workpiece held on the holding mechanism, and a moving mechanism configured to move the irradiation unit and the holding mechanism relative to each other.
B23K 26/142 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor for the removal of by-products
20.
METHOD FOR MANUFACTURING WIRING BOARD, AND WIRING BOARD
A novel technique is provided for reducing the defect rate of a wiring board in which a laminate is formed on a core substrate. A method for manufacturing a wiring board in which a laminate is formed on a first surface side and/or a second surface side of a core substrate, the method comprising at least: forming a first processing groove having a substantially V-shaped cross-section by cutting along a division line from the first surface side by using a cutting blade; forming a second processing groove having a substantially V-shaped cross-section by cutting along the division line from the second surface side by using a cutting blade; and dividing the core substrate along the first processing groove and the second processing groove, thereby forming individual wiring boards.
A processing method for a bonded wafer in which a first wafer and a second wafer are bonded, includes forming a ring-shaped modified layer by focusing and applying a laser beam adjacently inside a chamfered portion formed on an outer periphery of a first wafer; facilitating removal of the chamfered portion by supplying a liquid that weakens a bonding force to an interface between the first wafer and a second wafer bonded together in the chamfered portion and allowing the liquid to penetrate into the interface until the chamfered portion is removable; and grinding the first wafer of the bonded wafer held such that the second wafer faces a chuck table of a griding apparatus, thereby thinning the first wafer and removing the chamfered portion.
A polishing apparatus includes: a chuck table which holds a workpiece, a polishing mechanism to which a polishing tool configured to polish the workpiece is attached and which is configured to rotate the polishing tool, an elevation mechanism which is configured to move up and down the chuck table and the polishing tool relative to each other in a vertical direction; and a horizontal movement mechanism which is configured to move the chuck table and the polishing tool relative to each other in a horizontal direction, the polishing tool being a polishing roll that has an outer side surface used for polishing the workpiece, and the polishing mechanism including a spindle unit to which the polishing roll is attached and which rotates about a rotational axis whose longitudinal direction is the horizontal direction so as to rotate the polishing roll about the rotational axis.
B24B 7/07 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor involving a stationary work-table
23.
PROCESSING APPARATUS AND METHOD FOR MANUFACTURING A WAFER
A processing apparatus includes a chuck table configured to hold a wafer and rotate on a chuck shaft; a processing mechanism to rotate a spindle, to which an annular processing tool is attached, and process the wafer with a lower surface of the processing tool; a process-feeding mechanism to lift or lower the processing mechanism; at least three load sensors arranged at equal intervals along a circle centered on a rotation axis of the spindle or the chuck table and configured to measure a force pressing the processing tool against the wafer; and a controller to control pressing of the processing tool against the wafer such that a sum of values from the load sensors corresponds to a set load and control a rotation speed of the spindle or the chuck shaft such that a ratio of the values from the load sensors is maintained at a set ratio.
B24B 49/16 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
B24B 7/04 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor involving a rotary work-table
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 37/005 - Control means for lapping machines or devices
A method of manufacturing a substrate from an ingot having a cylindrical shape includes: relatively rotating the ingot and measurement light about a rotation axis passing through a center of the ingot while irradiating a side surface of the ingot with the measurement light, and detecting a position of a flat surface formed on the side surface of the ingot based on a change in an amount of measurement light received reflected by the side surface; forming a separation layer inside the ingot by positioning, inside the ingot, a focal point of a laser beam having a wavelength that passes through a material constituting the ingot and by relatively moving the ingot and the focal point in a predetermined direction; and separating the substrate from the ingot starting from the separation layer.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
A method for processing a workpiece, in which a first workpiece is fixed to a surface of a second workpiece, includes forming a first modified layer along an annular region inside the first workpiece by emitting laser light at a position inward by a predetermined distance from an outer edge of the first workpiece; removing at least a part of an outer peripheral portion of the first workpiece located outward from the first modified layer; thinning the first workpiece to a predetermined thickness; and removing a region of a film formed on the surface of the second workpiece and laminated with the outer peripheral portion of the first workpiece.
Provided is a semiconductor processing grindstone used for processing a workpiece including a semiconductor as a material. The semiconductor processing grindstone includes abrasive grains and a binder that binds the abrasive grains together. The binder includes magnesium oxide and magnesium salt.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
27.
LASER PROCESSING METHOD AND MANUFACTURING METHOD FOR CHIPS
Provided is a laser processing method of irradiating a workpiece with a laser beam. The laser processing method makes the laser beam incident on a reflecting surface of a rotating polygon mirror, and irradiates the workpiece with the laser beam reflected by the reflecting surface, to thereby form a plurality of first processing marks which are arranged along a processing feed direction and do not overlap with each other on the workpiece, and, after formation of the first processing marks, makes the laser beam incident on a reflecting surface of the rotating polygon mirror, and irradiates the workpiece with the laser beam reflected by the reflecting surface, to thereby form a plurality of second processing marks which are arranged along the processing feed direction and do not overlap with each other on the workpiece.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
28.
PROCESSING METHOD, PROCESSING DEVICE, AND SUBSTRATE MANUFACTURING METHOD
A processing method includes: acquiring data on an impurity concentration of a workpiece; and planarizing one surface of the workpiece held on a holding table by grinding or polishing the one surface with a planarization processor, and in the planarizing, the one surface of the workpiece is planarized based on the data acquired in the acquiring.
This detection element comprises: a glass housing that includes a first surface and a second surface facing one another and forming a space; an internal antenna; an external antenna that is disposed on the side opposite a surface where the internal antenna is disposed so as to sandwich the housing therebetween and that is electrically connected to the internal antenna; and a piezoelectric vibrator that is disposed so as to be able to be vibrated near, or in contact with, the internal antenna by a first support member and/or a second support member. The housing comprises: a plurality of openings that open to the exterior of the housing and communicate with the space; and a channel that allows a fluid to communicate between the space and the plurality of openings.
G01N 5/02 - Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid by absorbing or adsorbing components of a material and determining change of weight of the adsorbent, e.g. determining moisture content
30.
PROCESSING METHOD OF CHUCK TABLE, MANUFACTURING METHOD OF PROCESSED CHUCK TABLE, PROCESSING METHOD OF WORKPIECE, MANUFACTURING METHOD OF PROCESSED WAFER, AND PROCESSING APPARATUS
Provided is a processing method of a chuck table. The processing method of a chuck table includes processing a holding member forming a holding surface of a chuck table that has the holding surface for holding a workpiece and that is rotatable about a rotational axis transverse to the holding surface. In processing the holding member, the holding member is processed such that the holding surface has an outer peripheral protruding shape in which, relative to an extended surface of a surface formed by a central region which is a portion of the holding surface including a center thereof, at least a part of an outer peripheral region that is on an outer side of the central region is protruding in a direction transverse to the extended surface.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 37/10 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
B24B 41/06 - Work supports, e.g. adjustable steadies
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
A wafer processing method for processing a bonded wafer in which a first wafer and a second wafer are bonded includes forming a ring-shaped modified layer at an outer periphery of the first wafer by applying a laser beam having a wavelength with transmittability, with a focal point of the laser beam positioned at an inner side adjacent to the chamfered portion; forming a release layer in a region in which the chamfered portion is to be removed by causing a fluid that weakens a bonding force between the first wafer and the second wafer to penetrate into a bonding surface between the first wafer and the second wafer; and before the forming the release layer, forming unevenness for facilitating entry of the fluid by applying a laser beam with a focal point of the laser beam positioned in the region in which the chamfered portion is to be removed.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
32.
PROCESSING METHOD, PROCESSING DEVICE, AND WAFER MANUFACTURING METHOD
A method includes: holding a first workpiece on a first holding portion and holding a second workpiece on a second holding portion; and relatively moving the first workpiece and the second workpiece in an in-plane direction of a contact surface of the first workpiece and a contact surface of the second workpiece in a state in which the first workpiece and the second workpiece are in contact with each other to reduce unevenness of at least one of the contact surface of the first workpiece and the contact surface of the second workpiece. In the moving, the first workpiece and the second workpiece are brought into contact with each other such that an extending direction of the unevenness present on the contact surface of the first workpiece and an extending direction of the unevenness present on the contact surface of the second workpiece intersect each other.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
01 - Chemical and biological materials for industrial, scientific and agricultural use
07 - Machines and machine tools
17 - Rubber and plastic; packing and insulating materials
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Liquid chemicals for forming protective films on the surface
of semiconductor wafers; chemicals for removing protective
films formed on the surface of semiconductor wafers;
chemicals for releasing protective films formed on the
surface of semiconductor wafers; industrial chemicals. Metalworking machines and tools; semiconductor manufacturing
machines; dicing equipment for cutting semiconductor wafers
into chips; laser processing equipment for manufacturing
semiconductors; equipment for grinding semiconductor wafers;
equipment for cleaning semiconductor wafers; plasma etching
equipment for semiconductor wafers; equipment for forming
protective films for semiconductor wafers; equipment for
removing protective films for semiconductor wafers. Protective sheets and films for semiconductor wafer
surfaces; releasing sheets and films for releasing
protective sheets for semiconductor wafer surfaces; adhesive
tapes for processing semiconductors and electronic
components used in the manufacture of semiconductor wafers
and electronic components; adhesive tapes, other than
stationery and not for medical or household purposes. Processing of semiconductor wafers; surface grinding of
semiconductor wafers; metal treatment of semiconductor
wafers; water treatment of semiconductor wafers; material
treatment of semiconductor wafers.
34.
METHOD OF MANUFACTURING WAFER AND WAFER MANUFACTURING SYSTEM
A method of manufacturing a wafer from an ingot includes preparing the ingot that has a wafer forming region corresponding to the wafer and an outer circumferential excess region including an outer circumferential surface of the ingot and surrounding the wafer forming region, while a focused spot of a laser beam that is transmittable through the ingot is being positioned within the ingot, applying the laser beam to a region of the ingot that is disposed inwardly of the outer circumferential surface of the ingot while, at the same time, moving the ingot and the focused spot relatively to each other, thereby forming a separation layer that terminates short of the outer circumferential surface of the ingot within at least the wafer forming region of the ingot, processing the outer circumferential excess region of the ingot to expose a side surface of the wafer forming region.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
A method for processing a wafer, which includes an insulating film on a surface thereof and forms a plurality of devices and streets thereon, by emitting laser beams along the streets to form grooves extending along the streets, includes a protective film forming step including forming a protective film on the surface of the wafer; a narrow groove forming step including emitting a first laser beam split in a widthwise direction within a width of the street on the wafer held on a chuck table into a plurality of beams, to form a plurality of narrow grooves extending along the street; a wide bottomed groove forming step including emitting a second laser beam having a predetermined width to eliminate the plurality of narrow grooves and form a bottomed groove having a predetermined width; and a protective film removing step including removing the protective film.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/364 - Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method for processing a bonded wafer including a first wafer where a first device is formed on a front surface side of a first substrate thereof and a second wafer bonded together, to transfer the first device to the second wafer by separating a first substrate side of the bonded wafer therefrom, includes a laser processing step including forming a processed layer planarly within the first wafer by emitting a laser beam having a wavelength transmissive through the first substrate toward the bonded wafer from a back surface of the first wafer to be focused within the first substrate at a position in vicinity of a bonded surface between the first wafer and the second wafer; and a separation step including separating the first substrate side from the second wafer by splitting at the processed layer, with the first device remaining bonded to the second wafer.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
37.
LAMINATED SHEET, METHOD FOR MANUFACTURING LAMINATED SHEET, METHOD FOR PROCESSING WORKPIECE, AND METHOD FOR MANUFACTURING DEVICE CHIP
A laminated sheet includes: a first layer having a storage modulus of 1.0E+9 Pa or more and 1.0E+10 Pa or less in a tensile direction under a condition where a frequency of 1 Hz is applied in an environment of 50° C.; and a second layer laminated on the first layer and having a storage modulus of 1.0E+6 Pa or more and 1.0E+8 Pa or less in the tensile direction under the condition where the frequency of 1 Hz is applied in the environment of 50° C. A difference in a solubility parameter between the first layer and the second layer is 3.0 or less. The first layer and the second layer are laminated without an adhesive layer interposed therebetween.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
38.
TRANSFER DEVICE, TRANSFER METHOD, AND PROCESSING METHOD
A transfer device includes: a cassette table; a support unit; a transfer unit; and a control unit as defined herein, the cassette includes a pair of side walls and a support portion as defined herein, and the control unit includes a storage unit configured to store correlation information indicating a correlation as defined herein, and a controller configured to control, based on the correlation information, the direction of the object to be transferred by at least one of the support unit or the transfer unit when the object to be transferred is loaded from the support unit into the cassette such that the amount of deflection of the object to be transferred decreases.
B65G 47/90 - Devices for picking-up and depositing articles or materials
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
39.
METHOD OF PROCESSING WAFER AND METHOD OF MANUFACTURING PROCESSED WAFER
A method of processing a wafer by processing a first wafer having a beveled part on an outer circumferential edge thereof includes holding, on a first holding surface of a first chuck table, a second surface side of the first wafer that is opposite a first surface side thereof such that the first surface side of the first wafer is exposed and after the second surface side of the first wafer has been held, processing the outer circumferential edge of the first wafer to remove the beveled part on the outer circumferential edge of the first wafer in its entirety or a portion of the beveled part on the first surface side. The first wafer is progressively smaller in diameter from the first surface side toward the second surface side in a region of the outer circumferential edge of the first wafer that has been processed.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B24B 9/06 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
40.
LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD
A laser processing apparatus includes a holding unit having a holding surface holding a workpiece, a beam condenser focusing a laser beam, a position adjusting unit adjusting a positional relation between the holding unit and a focused spot of the laser beam, a first rotation mechanism rotating the holding unit with a first rotational axis as a center, a second rotation mechanism rotating the holding unit or the beam condenser with a second rotational axis as a center, a crystal orientation information acquisition unit acquiring crystal orientation information for identifying a crystal orientation of the workpiece, and a controller. The controller is capable of applying the laser beam to the workpiece from the side surface side in a state in which the beam condenser faces a side surface of the workpiece and a position of the focused spot relative to the workpiece is adjusted according to the crystal orientation.
The cutting method for a workpiece includes cutting an outer circumferential portion of one surface of the workpiece to form an annular step portion by causing a cutting blade to cut into a chamfered portion of the one surface of the workpiece held by a holding surface of a chuck table and rotating the chuck table. The cutting method also includes cutting a bottom portion of the annular step portion by relatively moving the chuck table and the cutting blade after the cutting the outer circumferential portion to form the annular step portion. The cutting the bottom portion of the annular step portion includes relatively moving the chuck table and the cutting blade along a longitudinal direction of a spindle on which the cutting blade is mounted in a state in which the height position of the spindle relative to the chuck table is kept.
A wafer manufacturing apparatus includes an ingot grinding unit for grinding an upper surface of an ingot to planarize the upper surface of the ingot, a laser applying unit for forming peel-off layers in the ingot at a depth therein, which corresponds to the thickness of a wafer to be produced from the ingot, from the upper surface of the ingot, a wafer peeling unit for holding the upper surface of the ingot and peeling off a wafer from the ingot at the peel-off layers, a tray having an ingot support portion and a wafer support portion, and a belt conveyor unit for delivering the ingot supported on the tray between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.
A method for grinding a workpiece with a grinding apparatus including a holding table with a rotatable conical-shaped holding surface, a grinding unit including a spindle and grindstones, which grinds the workpiece by bringing the rotating grindstones into contact with the workpiece to thereby form a grinding surface lying along the holding surface, and a moving unit that moves the holding table and the grindstones relative to each other. The method includes holding the workpiece on the holding surface, grinding the workpiece by performing grinding feed where the holding table and the spindle approach each other along a rotational axis of the spindle with the workpiece and the grindstones contacting each other while the holding table and the spindle are independently rotated, and, after grinding the workpiece, stopping the grinding feed and moving the holding table and the spindle relative to each other while rotating the table and the spindle.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B24B 5/14 - Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfacesAccessories therefor involving centres or chucks for holding work for grinding conical surfaces, e.g. of centres
B24B 5/24 - Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfacesAccessories therefor involving centreless means for supporting, guiding, floating or rotating work for grinding conical surfaces
A wafer processing method includes forming a ring-shaped modified layer by holding a second wafer of a bonded wafer on a holding table and applying a laser beam with a focal point of the laser beam positioned on an inner side adjacent to a chamfered portion formed at an outer periphery of a first wafer of the bonded wafer; loading the bonded wafer onto a grinding apparatus for grinding the first wafer of the bonded wafer; and grinding the first wafer to thin the first wafer and remove the chamfered portion formed at the outer periphery of the first wafer by a grinding force. The loading or the grinding includes supplying a fluid for weakening a bonding force to an interface of the chamfered portion at which the first wafer and the second wafer are bonded.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 41/06 - Work supports, e.g. adjustable steadies
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
01 - Chemical and biological materials for industrial, scientific and agricultural use
07 - Machines and machine tools
17 - Rubber and plastic; packing and insulating materials
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Liquid chemicals for forming protective films on the surface
of semiconductor wafers; chemicals for removing protective
films formed on the surface of semiconductor wafers;
chemicals for releasing protective films formed on the
surface of semiconductor wafers; industrial chemicals. Metalworking machines and tools; semiconductor manufacturing
machines; semiconductor wafer cutting machines; laser
processing equipment for manufacturing semiconductors;
equipment for grinding semiconductor wafers; equipment for
cleaning semiconductor wafers; plasma etching equipment for
semiconductor wafers; equipment for forming protective films
for semiconductor wafers; equipment for removing protective
films for semiconductor wafers; semiconductor wafer
processing equipment. Protective sheets and films for semiconductor wafer
surfaces; releasing sheets and films for releasing
protective sheets for semiconductor wafer surfaces; adhesive
tapes for processing semiconductors and electronic
components used in the manufacture of semiconductor wafers
and electronic components; adhesive tapes, other than
stationery and not for cosmetic, medical or household
purposes; plastic film, other than for wrapping. Processing of semiconductor wafers; surface grinding of
semiconductor wafers; metal treatment of semiconductor
wafers; water treatment of semiconductor wafers; material
treatment of semiconductor wafers; custom manufacture of
semiconductor wafers.
46.
PEELING METHOD, WAFER PRODUCTION METHOD, AND BONDED WAFER
A peeling method of the present invention includes: a laser processing step of forming a processing layer in an SiCN film by applying, to a bonded wafer which includes a first wafer and a second wafer and in which a surface of the first wafer in which a first device and a first bonding film are formed on the surface is bonded to a surface of the second wafer in which a second bonding film including the SiCN film is formed on the surface via the first bonding film and the second bonding film, laser light having a wavelength transmissive to the second wafer from the second wafer side; and a peeling step of peeling the second wafer from the bonded wafer at the processing layer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
Provided is a method for cleaning a wafer that enables sufficient removal of cutting chips from the wafer surface. The method for cleaning a wafer includes: mounting a wafer 56 on a spinner table 4 such that a rear surface of the wafer 56 faces the spinner table 4 and a front surface 56a of the wafer 56 is exposed, the spinner table 4 being rotatable while holding the wafer 56; subjecting the front surface 56a of the wafer 56 to first cleaning with cleaning water supplied to the front surface 56a of the wafer 56, while rotating the spinner table 4; and subjecting the front surface 56a of the wafer 56 to second cleaning with ammonia water supplied to the front surface 56a of the wafer 56 using a brush. [Elected View] FIG. 6
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A wafer processing method for removing a chamfered portion of a first wafer that includes producing a provisionally bonded wafer in which first and second wafers are weakly bonded; forming a ring-shaped modified layer by applying a laser beam to an inner side adjacent to a chamfered portion formed at an outer periphery of the first wafer of the provisionally bonded wafer, and detaching the chamfered portion from the second wafer, with the modified layer serving as a starting point; and producing a completely strongly bonded wafer by annealing the provisionally bonded wafer. The wafer processing method further includes grinding and thinning the first wafer, with the second wafer being held on a chuck table constituting a grinding apparatus, and removing the chamfered portion of the first wafer that is detached from the second wafer, with the modified layer serving as a starting point.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A chuck table holds a wafer having an off-cut angle by suction for grinding with a grindstone. The chuck table includes a disk-shaped porous member and a path-length varying portion. The path-length varying portion creates a path-length difference in paths of the grindstone grinding the porous member such that a holder surface, formed by rotating the porous member about a rotation axis extending through a center of the porous member and grinding an upper surface of the porous member with the grindstone, has a height difference between one side and the other side across a line that extends through the center of the porous member.
A chip production method in which a workpiece having a plurality of planned dividing lines set on a side of a front surface of a substrate and a functional layer formed on the front surface is divided along the planned dividing lines to produce chips, includes: applying a laser beam along the planned dividing lines to remove respective parts of the functional layer and form, in the substrate, respective processed grooves having a depth smaller than a finished thickness; processing a side of a back surface of the substrate to thin the substrate to the finished thickness; and after the processing, imparting an external force to the workpiece to divide the workpiece into a plurality of chips along the processed grooves.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
51.
POLISHING SURFACE DRESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE
A polishing surface dressing method includes: a dressing step of dressing a polishing surface; a polishing surface shape measuring step of measuring the shape of the polishing surface based on a displacement amount in a first direction orthogonal to the polishing surface and a movement position in the second direction of the dressing section that is in contact with the polishing surface; a determination step of determining appropriateness of the shape of the polishing surface measured in the polishing surface shape measuring step; and a condition change step of changing a contact condition in which the dressing section makes contact with the polishing surface in the dressing step, when the shape of the polishing surface is determined to be “No Good”, and the dressing step is performed again based on the contact condition changed in the condition change step.
A manufacturing method of a second substrate by separating, as the second substrate, a part of a small thickness portion of a first substrate including a protruding portion and the small thickness portion surrounded by the protruding portion, the first substrate having one surface to which a protective member is fixed, includes setting an inner circumferential edge of a removal region in the small thickness portion, where the inner edge defines an external shape of the second substrate, setting an outer circumferential edge of the removal region such that the outer edge of the removal region is located at a middle point between the inner edge and a boundary between the small thickness portion and the protruding portion or located outward of the middle point in a radial direction of the first substrate, and separating the second substrate from the first substrate by removing the removal region.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A manufacturing method of manufacturing a second substrate by separating, as the second substrate, a part of a small thickness portion of a first substrate including a protruding portion and the small thickness portion surrounded by the protruding portion is provided. The first substrate has one surface to which a protective member is fixed. The method includes setting an inner edge of a removal region in the small thickness portion located inward of an outer edge of a holding surface, setting an outer edge of the removal region to a middle point between the inner edge of the removal region and the outer edge of the holding surface or to a point outward of the middle point, separating the second substrate from the first substrate by removing the removal region, and peeling off the protruding portion and the small thickness portion outside of the removal region from the protective member.
This slide glass (1) is formed from at least one selected from the group consisting of quartz, rock crystal, silicon, sapphire, etc. Further, a plurality of first metal lines (21) extending in a first direction (x) and arranged at a prescribed spacing and a plurality of second metal lines (22) extending in a second direction (y) and arranged at a prescribed spacing are provided on a part of a surface (1a) on which a biological sample is to be placed or the like. A plurality of sub-regions (3) are defined by the metal lines (21, 22), and the metal lines (21, 22) are formed from at least one metal selected from the group consisting of Re, Ir, Ta, Ni, Cr, Pt, Au, Ti, and Si.
G01N 27/62 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosolsInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electric discharges, e.g. emission of cathode
A method is of manufacturing a plurality of devices by dividing a device wafer along a plurality of planned dividing lines intersecting each other, the device wafer having a device surface on which each of the devices is formed in each of regions partitioned by the planned dividing lines. The method includes: directly bonding a carrier plate to the device surface of the device wafer; after the bonding of the carrier plate, dicing the device wafer supported by the carrier plate along the planned dividing lines to thereby form a plurality of devices; and after the forming of the plurality of devices, separating the plurality of devices from the carrier plate.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/463 - Mechanical treatment, e.g. grinding, ultrasonic treatment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer production method for producing, from a workpiece being a nitride or oxide semiconductor, a wafer thinner than the workpiece, includes holding a back surface of the workpiece; forming a separation layer in an outer peripheral region of the held workpiece as defined herein; forming a separation layer in an inner region inside the outer peripheral region of the workpiece as defined herein, after the forming of the separation layer in the outer peripheral region; and separating a plate-shaped object from the workpiece as the wafer with the separation layers formed in the outer peripheral region and the inner region as a start point, and the forming of the separation layer in the outer peripheral region includes forming the separation layer at an inner position, and forming the separation layer at an outer position after the forming of the separation layer at the inner position.
B23K 26/55 - Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
A grinding apparatus for grinding a wafer includes a chuck table, a grinding unit, an elevating mechanism, a grinding water supply device, a spray nozzle, a thickness measuring device, and a controller to control spraying water from a spray nozzle toward the wafer so as to expand or contract the chuck table via the wafer and thereby changing a height of a holding surface such that warm water is sprayed toward a position, of which thickness value among thickness values measured by the thickness measuring device indicates a thickness greater than a preset target thickness, or a position, of which thickness value indicates a thickness greater than an average value of the thickness values; or cold water is sprayed toward a position, of which thickness value indicates a thickness less than the preset target thickness, or a position, of which thickness value indicates a thickness less than the average value.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
58.
GRINDING APPARATUS, GRINDING METHOD, AND DIAMOND SUBSTRATE GENERATION METHOD
A grinding apparatus capable of easily processing an end surface of a diamond substrate into a planar surface, where the grinding apparatus includes a holding unit for holding the diamond substrate, a grinding unit including a grinding tool for grinding the end surface of the diamond substrate held by the holding unit, and a grinding feed unit for grinding-feeding the grinding unit in a direction that brings the grinding unit closer to and away from the end surface of the diamond substrate held by the holding unit. The grinding tool has a base and a grinding blade mounted on the base. The grinding blade is made of iron and acts on the end surface of the diamond substrate to cause a reaction between the iron and carbon of diamond and generate a compound containing austenite, thereby grinding the end surface of the diamond substrate.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A bonding apparatus includes: a first holder configured to hold a first substrate; a second holder disposed to face the first holder and configured to hold a second substrate to be bonded to the first substrate; an imaging unit including a first portion including a first objective lens that captures an image of a first mark formed on the first substrate held by the first holder, and a second portion including a second objective lens that captures an image of a second mark formed on the second substrate held by the second holder; and a mover configured to relatively move the imaging unit, first holder, and second holder in a region between the first holder and the second holder. In the imaging unit, an optical axis of the first objective lens and an optical axis of the second objective lens are not on a same straight line.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
60.
TAPE MOUNTER, PROCESSING APPARATUS, AND METHOD FOR PROCESSING WORKPIECES
A tape mounter configured to attach at least one workpiece to a tape, which is attached to a ring frame to close an opening in the ring frame, includes frame rails configured to support a frame set, in which the tape is attached to the ring frame to close the opening; a workpiece movement assembly configured to move the at least one workpiece onto the tape in the frame set supported by the frame rails; a table configured to support a surface of the tape on an opposite side to an attaching surface of the ring frame; and an attaching assembly configured to attach the at least one workpiece moved by the workpiece movement assembly to the attaching surface of the tape supported by the table.
A method of thinning down a workpiece having a first region and a second region that are layered together includes acquiring a thickness of the first region, thinning down the second region by bringing a processing tool into contact with the workpiece held on a holding table, measuring a thickness of the second region of the workpiece that has been thinned down, adjusting a positional relation between the processing tool and the holding table by referring to a total thickness of the workpiece that includes the thickness of the first region and the thickness of the second region, and thinning down the workpiece by bringing the processing tool into contact with the workpiece held on the holding table.
There is provided a separation method for an object by which the object held by a holding surface is separated from the holding surface. The separation method includes ejecting a liquid from the holding surface in a state in which the object is held by the holding surface, separating the holding surface and the object while keeping a state in which the liquid is in contact with both the holding surface and the object by causing the holding surface and the object to relatively move in such a direction as to separate from each other after the ejecting the liquid from the holding surface, and removing the liquid in contact with both the holding surface and the object after the separating the holding surface and the object.
B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
63.
METHOD OF MANUFACTURING LAMINATED WAFER WITH PROCESSED OUTER CIRCUMFERENCE, METHOD OF MANUFACTURING DEVICE CHIPS, AND APPARATUS FOR PROCESSING LAMINATED WAFER
A method of manufacturing a laminated wafer with a processed outer circumference includes acquiring a value of joint misalignment between a first wafer and a second wafer of the laminated wafer by measuring the positions of outer circumferences of the first and second wafers, holding the second wafer of the laminated wafer on a holding surface of a holding mechanism, acquiring the position of the first wafer with respect to the holding mechanism while the laminated wafer is being held by the holding mechanism, acquiring the position of the second wafer with respect to the holding mechanism on the basis of the acquired value of joint misalignment and the acquired position of the first wafer, and processing the outer circumference of the first wafer on the basis of the acquired position of the second wafer as a reference.
H01L 21/463 - Mechanical treatment, e.g. grinding, ultrasonic treatment
B24B 37/005 - Control means for lapping machines or devices
B24B 51/00 - Arrangements for automatic control of a series of individual steps in grinding a workpiece
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A processing apparatus includes: a holding unit configured to hold a workpiece; a processing unit configured to process the workpiece; and a microscope configured to observe the workpiece. The microscope includes: a light receiving element; a first lens configured to condense light from an inside of the workpiece; a second lens configured to condense the light condensed by the first lens to form an intermediate image; and an imaging optical system configured to form the light from the intermediate image on the light receiving element. The imaging optical system has an optical axis inclined with respect to an optical axis of the second lens and is configured to form, on the light receiving element, an inclined surface inclined in a direction not orthogonal to the optical axis of the second lens in the intermediate image.
A method of separating a carrier bonded to a workpiece by a temporary adhesive layer from the workpiece includes forming a separation initiating point in the temporary adhesive layer by inserting a protrusive member into the temporary adhesive layer in such a manner that the protrusive member enters between the workpiece and the carrier and, after the separation initiating point has been formed in the temporary adhesive layer, applying external forces respectively to the workpiece and the carrier to separate the carrier from the workpiece.
B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A wafer production method for producing a wafer from a workpiece having a first surface and a second surface that is in an opposite side of the first surface. The wafer production method includes: forming a separation start point including a modified region and a crack extending from the modified region by setting a focal point of a laser beam having a transmission wavelength at a position deeper than the first surface of the workpiece and applying the laser beam to the workpiece from the first surface; and separating, as the wafer, a plate-shaped object including the first surface of the workpiece from the separation start point by applying an ultrasonic wave to the first surface of the workpiece. The workpiece in the separating has a substrate attached to the second surface.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 103/00 - Materials to be soldered, welded or cut
67.
MANUFACTURING METHOD FOR DIVIDING PROCESSING PRODUCTS AND PROCESSING APPARATUS
There is provided a processing apparatus for dividing processing products that divides a workpiece into a plurality of dividing processing products. This processing apparatus for dividing processing products includes a conveyor that has a conveying surface on which the workpiece is placed and conveys the workpiece placed on the conveying surface and an irradiation mechanism that irradiates the workpiece with a laser beam. The processing apparatus irradiates the workpiece that is placed on the conveying surface of the conveyor and is being conveyed and moved with the laser beam to execute dividing processing for a dividing-target element of the workpiece.
A grinding apparatus includes a chuck table rotatable about a table rotational axis, a grinding unit including a spindle having a grinding wheel fitted to a lower end thereof, an inclination adjusting unit that adjusts inclination of one of or both the table rotational axis and the spindle, a thickness measuring instrument that measures a thickness of a workpiece, and a controller, the controller including a necessary adjustment amount calculating section that calculates an adjustment amount necessary for adjustment of the inclination as a necessary adjustment amount in reference to thickness information of the workpiece being ground, an actual adjustment amount calculating section that calculates an actual adjustment amount by multiplying the necessary adjustment amount by an adjustment rate, and an adjustment control section that adjusts the inclination by the actual adjustment amount.
A wafer processing method including applying a laser beam to the wafer along projected dicing lines of the wafer while focusing the laser beam within the wafer, thereby forming modified layers in the wafer along the projected dicing lines, after the modified layers have been formed in the wafer, affixing a first tape to a reverse side of the wafer, after the first tape has been affixed to the reverse side of the wafer, developing cracks initiated from the modified layers in the wafer to divide the wafer into a plurality of device chips, and expanding the first tape to form gaps between the device chips, and after the gaps have been formed between the device chips, inserting a cutting blade into the gaps and causing the cutting blade to cut into side faces of the device chips, thereby cutting off the side faces of the device chips.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
70.
WAFER MANUFACTURING METHOD, LASER PROCESSING APPARATUS, AND WAFER MANUFACTURING APPARATUS
A method for manufacturing a wafer from an ingot includes: holding the ingot; applying a laser beam having a wavelength that transmits through the ingot from a front surface of the ingot and positioning a focal point of the laser beam at a position deeper than the front surface of the ingot to form a modified region, and relatively feeding the ingot and the focal point for processing to form a separation layer including a plurality of the modified regions inside the ingot; separating, from the ingot, a workpiece including the front surface of the ingot as the wafer, with the separation layer as a start point; and grinding a separation surface of the wafer to remove the modified region. In the applying, a depth of the focal point forming the modified region is changed to form the separation surface into a three-dimensional shape rather than a horizontal surface.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
A chip manufacturing method includes: preparing a wafer unit having a protective member fixed to one surface of a wafer and having a recess and a loop-shaped protrusion surrounding the recess on the other surface side of the wafer, the protective member including a first sheet in contact with the wafer, a resin layer stacked on the first sheet, and a second sheet stacked on the resin layer; processing the wafer and the protective member along a boundary between the recess and the loop-shaped protrusion to separate the recess and the loop-shaped protrusion from each other; and after separating of the recess and the loop-shaped protrusion, holding the protective member side of the wafer on a holding table and dividing the wafer from the other surface side to manufacture a plurality of chips.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A grinding apparatus including a chuck table whose holding surface is polygonal, a grinding unit, a moving unit, a load detection unit, and a controller, wherein the controller includes a load storage section, a holding surface grinding command section that controls a load applied to one (or both) the grinding unit and the chuck table, by controlling a parameter related to grinding processing when the holding surface is ground, and a workpiece grinding command section that controls a load that is the same type of load as that controlled by the holding surface grinding command section, by controlling the parameter related to grinding processing when a workpiece held on the holding surface is ground, and the controller controls the parameter related to grinding processing such that the load controlled by the holding surface grinding command section and the load controlled by the workpiece grinding command section have the same value.
A dressing apparatus dresses grindstones for grinding a workpiece by causing the grindstones and a dresser board to slide abrasively against each other. The dressing apparatus includes a board holder for holding the dresser board, a moving mechanism for moving the board holder and the grindstones relatively to each other in a direction transverse to a plane along which the grindstones abrasively slide against the dresser board, and a measuring instrument for detecting a load applied to the dresser board.
An optical processing apparatus for irradiating a workpiece with a laser beam is provided. The optical processing apparatus includes a laser oscillator configured to emit the laser beam, an irradiating unit configured to irradiate the workpiece with the laser beam emitted from the laser oscillator, an irradiating unit moving mechanism configured to move the irradiating unit, a plurality of optical elements arranged on an optical path of the laser beam emitted from the laser oscillator to guide the laser beam from the laser oscillator to the irradiating unit, and an adjustment moving mechanism configured to move the optical element with respect to a movement direction of the irradiating unit. Along with a movement of the irradiating unit, the adjustment moving mechanism moves the optical element in an opposite direction to the movement direction of the irradiating unit, thereby adjusting an optical path length of the laser beam.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
75.
PROTECTIVE MEMBER FORMING DEVICE, PROTECTIVE MEMBER FORMING METHOD, WORKPIECE MANUFACTURING METHOD, AND CHIP MANUFACTURING METHOD
A protective member forming device includes: a first holding unit; a second holding unit; a resin supply unit; a moving unit; and a controller, as defined herein, the controller includes an acquisition unit, a first movement controller configured to control the moving unit as defined herein, and a second movement controller configured to control the moving unit as defined herein, and the first movement controller is configured to set the first position to a position obtained by correcting a temporary first position, which is set in advance based on the reference thickness, based on a difference between the reference thickness and the actual thickness.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
76.
DEVICE CHIP PRODUCTION METHOD AND LASER PROCESSING APPARATUS
A method includes: a first processing step of forming a modified layer inside a workpiece by irradiating the workpiece with a laser beam having a wavelength that transmits through the workpiece along a first planned dividing line; a second processing step of forming a modified layer inside the workpiece by irradiating the workpiece with the laser beam along an adjacent planned dividing line adjacent to the first planned dividing line; and a position coordinate acquisition step of acquiring a position coordinate of a key pattern formed in a predetermined region of the workpiece along an extending direction of the adjacent planned dividing line, after the first processing step is performed, and in the second processing step, the adjacent planned dividing line is corrected based on the position coordinate of the key pattern, and the workpiece is irradiated with the laser beam along the corrected adjacent planned dividing line.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A laser processing apparatus includes a holding unit, a laser beam irradiating unit, a processing feed unit, a first resistance measuring apparatus including a first measurement head, and a controller, the controller being configured to, when irradiating a workpiece with a laser beam while moving the holding unit and a condenser relative to each other along a processing feed direction, measure electric resistance or electric resistivity of a measurement target region of the workpiece by using the first measurement head and maintain or change a condition for processing the workpiece by the laser beam to be applied to the measurement target region according to the electric resistance or the electric resistivity of the measurement target region.
A novel technology is proposed for a technology of configuring a laminated body in which a workpiece is laminated on a supporting substrate and then thinning the workpiece. A workpiece processing method includes an adhesive material supply step of laying an adhesive material on a supporting substrate, a facing step of causing a workpiece to face the adhesive material, a laminated body forming step of pressing the adhesive material with the workpiece to integrate the workpiece and the supporting substrate together and form a laminated body, a supporting substrate grinding step of grinding and planarizing an exposed surface of the supporting substrate of the laminated body, and a thinning step of, after the supporting substrate grinding step, thinning the workpiece to a predetermined thickness by grinding an exposed surface of the workpiece of the laminated body.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 41/06 - Work supports, e.g. adjustable steadies
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
79.
TRANSFER APPARATUS, FRAME UNIT TRANSFER METHOD, AND CHIP MANUFACTURING METHOD
A transfer apparatus includes a pad for holding a frame unit on a holding surface side thereof, a liquid supply unit configured to supply liquid to the holding surface side of the pad, and a moving mechanism configured to move the pad. The holding surface has a first area and a second area surrounding the first area and protruding with respect to the first area. In a state in which the first area faces a plate-shaped object and the second area surrounds the plate-shaped object, the frame unit is held on the holding surface side by use of interfacial tension of liquid in a still state, the liquid being supplied from the liquid supply unit and filling gaps between the first area and the plate-shaped object, and between the second area and the plate-shaped object, and then the moving mechanism moves the pad to transfer the frame unit.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A chip manufacturing method for manufacturing a plurality of chips by dividing a substrate along predetermined dicing lines includes forming a protective film on a surface of the substrate; removing the protective film along the predetermined dicing lines; dividing the substrate into the plurality of chips along the predetermined dicing lines by performing plasma-etching using the protective film remaining on the surface of the substrate as a mask; and chamfering peripheral regions of the chips by performing plasma-etching using the protective film as a mask.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Disclosed is an expansion method for expanding an expandable sheet of a workpiece unit including a plate-shaped workpiece, a first ring frame, and the expandable sheet attached to the workpiece and the first ring frame. A central area of the expandable sheet is pressed in directions inclined radially outward with respect to a direction perpendicular to an opening of the first ring frame, distances between respective chips formed as a result of division of the workpiece are increased, and the expanded expandable sheet is fixed to a second ring frame.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
82.
LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD
A laser beam processing apparatus, that allows to obtain a desired processing result for various workpieces without damaging a device during laser processing, is provided. The laser processing apparatus includes: a chuck table that holds a workpiece; a laser beam applying unit that applies a pulsed laser beam to the workpiece held on the chuck table; and a feeding unit that relatively feeds the chuck table and the laser beam applying unit for processing. The laser beam applying unit includes: an oscillator that oscillates a pulsed laser beam, and a condenser that collects the pulsed laser beam LB oscillated by the oscillator, and applies the pulsed laser beam to the workpiece held on the chuck table. A repetition frequency of the pulsed laser beam oscillated by the oscillator is set to at least a value determined by multiplying a thermal conductivity λ[W/(m·K)] of the workpiece by a coefficient β[MHz·m·K/W].
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
83.
LASER INTENSITY MEASURING DEVICE, LASER PROCESSING APPARATUS HAVING THE LASER INTENSITY MEASURING DEVICE, METHOD FOR MEASURING LASER INTENSITY, AND METHOD FOR LASER PROCESSING
A laser intensity measuring device includes a diffraction optical element configured to split a laser beam into a plurality of branch beams; an integrating sphere including an entrance port through which one of the laser beam or the plurality of branch beams enters the integrating sphere, an exit port through which at least one of the plurality of branch beams exits the integrating sphere, and an inner wall on which the other of the plurality of branch beams impinge; and a sensor configured to measure an intensity of the other of the plurality of branch beams reflected by the inner wall.
An ultraviolet irradiation system irradiates a delivery target with ultraviolet rays. The ultraviolet irradiation system includes a delivery path along which to deliver the delivery target to a treatment apparatus and an ultraviolet irradiator for irradiating the delivery target delivered along the delivery path with ultraviolet rays, in which the ultraviolet irradiator is disposed in the delivery path and includes an ultraviolet emitter for emitting ultraviolet rays.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
85.
TREATMENT METHOD FOR SHEET, MANUFACTURING METHOD FOR CHIP, AND MANUFACTURING METHOD FOR SUBSTRATE
There is provided a treatment method for a sheet by which treatment for the sheet fixed to an object is executed. The treatment method includes preparing the object to which the sheet is fixed, forming a light absorbing film that absorbs light and generates heat on a non-fixed region that is not fixed to the object in the sheet, and heating and shrinking the non-fixed region by irradiating the light absorbing film with the light and causing the light absorbing film to generate heat.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method for processing a substrate includes forming, in a state where the substrate and a film are integrated through a resin that cures due to an external stimulus, a laminate by semi-curing the resin by applying the external stimulus to the resin; processing the laminate; improving a curing degree of the resin by applying the external stimulus to the resin after processing of the laminate; and peeling the resin and the film from the substrate after improving of the curing degree.
B29C 41/12 - Spreading-out the material on a substrate
B24B 7/20 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
A laser processing apparatus includes a laser oscillator for emitting a laser beam, a polygon mirror having a plurality of reflective facets and rotatable for scanning the laser beam, a beam condenser for focusing the laser beam scanned by the polygon mirror, a detectable mark rotatable together with the polygon mirror, and a sensor for detecting the detectable mark, the sensor being not rotatable together with the polygon mirror. An irradiated facet that is irradiated with the laser beam is specified among the reflective facets on the basis of the detection of the detectable mark by the sensor.
A processing method for processing a wafer, on a surface on one side of which a recess and a ring-shaped protrusion surrounding the recess are formed, the surface having a protective member being fixed thereon, is provided. The processing method includes holding the one side of the wafer against a holder table, forming a protective film in a region including a boundary between the recess and the protrusion on the wafer held on the holder table, inspecting the protective film formed on the wafer, and cutting the wafer along the boundary, in a case where the protective film passes the inspection, by irradiating the boundary with a laser beam.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
89.
WORKPIECE PROCESSING PREPARATION METHOD AND PROCESSING METHOD
A processing method of thinning a sheet-shaped workpiece having an outer peripheral groove formed in an outer peripheral edge portion of a top surface thereof. The method includes the steps of: laying an adhesive material on a top surface of a supporting substrate; causing the sheet-shaped workpiece to face the adhesive material; pressing the adhesive material with the top surface of the workpiece to press-spread the adhesive material between the workpiece and the supporting substrate, and to fill the outer peripheral groove with the adhesive material; hardening the adhesive material with an external stimulus to form a laminated body; holding the supporting substrate side of the laminated body on a holding table to expose a back surface of the workpiece; and grinding the back surface of the workpiece with a grinding stone to thin the workpiece to a predetermined thickness.
B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 19/02 - Single purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
90.
BONDING MACHINE OF TAPE, BONDING METHOD OF TAPE, AND MANUFACTURING METHOD OF CHIPS
A bonding machine of bonding a self-adhesive tape to an object is provided. The bonding machine includes a holding table configured to hold the object, a frame table configured to support the frame such that the frame opposes the object, a bonding press element configured to press the self-adhesive tape against the object with the self-adhesive tape, the self-adhesive tape being held on the frame, held between the bonding press element and the object, and a bonding and moving mechanism configured to perform bonding press to move the bonding press element and the holding table relative to each other along a direction intersecting a direction of a pressing force of the bonding press element. The frame table is configured to support the frame in a non-parallel state with the holding table upon bonding press.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
91.
LASER PROCESSING APPARATUS AND LASER BEAM APPLYING METHOD
A laser processing apparatus includes a laser oscillator for emitting a laser beam, a polygon mirror having a plurality of reflective facets and rotatable for scanning the laser beam, a beam condenser for focusing the laser beam scanned by the polygon mirror, a position adjusting unit for adjusting irradiated positions where the reflective facets are irradiated with the laser beam, and a measuring unit for measuring the positions of irradiated regions that are irradiated with the laser beam scanned by the polygon mirror, in which the position adjusting unit adjusts the irradiated positions where the reflective facets are irradiated with the laser beam with respect to the respective reflective facets on the basis of the positions of the irradiated regions measured by the measuring unit with respect to the respective reflective facets.
A method of manufacturing a grindstone includes molding a mixture of materials including abrasive grains, an epoxy resin, and an amine-based hardener to a predetermined shape and leaving the mixture to stand until the epoxy resin is hardened by the amine-based hardener in a chemical reaction therewith, and the amine-based hardener has an amine value of 600 mgKOH/g or higher.
A wafer processing method for a wafer formed of a semiconductor material includes: preparing a wafer that includes a front surface, a back surface on a rear surface of the front surface, and a side surface ranging from the front surface to the back surface and includes a flat mirror surface portion indicating a crystal orientation of the wafer on the side surface; and grinding the back surface of the wafer prepared in the preparing to form a recess and form a projection surrounding the recess.
A method for processing a wafer to form a processing groove on the wafer along a predetermined dividing line, on at least a part of which a structure is formed, comprises forming a first processing groove by removing the structure partly and leaving at least an end portion of the structure, which includes at least one end of the structure in a widthwise direction of the predetermined dividing line, and forming a second processing groove along the predetermined dividing line by removing the end portion of the structure being left in forming the first processing groove.
H01L 21/77 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
B23K 26/364 - Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
A method for processing workpieces includes holding a first workpiece on a first holder device and holding a second workpiece made of a same material as the first workpiece on a second holder device, reducing roughness of the first workpiece and the second workpiece including moving the first workpiece and the second workpiece relatively while the first workpiece and the second workpiece are maintained in contact with each other to reduce roughness on contacting surfaces of the first workpiece and the second workpiece that contact each other, and supplying a polishing liquid to a contact area between the first workpiece and the second workpiece.
A processing apparatus is for processing a semiconductor wafer. The semiconductor wafer includes a front surface, a back surface of a rear surface of the front surface, a side surface extending from the front surface to the back surface, and has a flat mirror surface portion indicating a crystal orientation of the semiconductor wafer on the side surface. The processing apparatus includes: a placement table on which a wafer cassette configured to store the semiconductor wafer is placed, a detection unit that detects the flat mirror surface portion; and a transport unit that transports the semiconductor wafer whose flat mirror surface portion is detected by the detection unit to the wafer cassette placed on the placement table. The transport unit stores the semiconductor wafer into the wafer cassette such that the flat mirror surface portion is in a predetermined orientation with respect to the wafer cassette.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
97.
SEMICONDUCTOR WAFER, METHOD FOR PROCESSING SEMICONDUCTOR WAFER, AND PROCESSING APPARATUS
A semiconductor wafer has a first surface and a second surface which is a back surface opposite to the first surface. The semiconductor wafer has a circular shape having no cutout portion in a horizontal cross section.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A method of processing a wafer that does not leave residue from removal of a chamfered portion. The method includes: a first modified layer forming step of applying a laser beam to an inner side adjacent to a chamfered portion formed on an outer periphery of the first wafer by focusing the laser beam and transmitting through the first wafer to form a ring-shaped modified layer; and a second modified layer forming step of applying the laser beam to a bonded surface of the first and second wafers, by focusing the laser beam and transmitting through the first wafer to form a bonding-force reducing modified layer. In the second modified layer forming step, the bonding-force reducing modified layer is connected with a bottom portion of the ring-shaped modified layer formed in the first modified layer forming step, or a ring-shaped modified layer formed after the second modified layer forming step.
A method for reusing a supporting wafer, which has chips or a wafer bonded thereon with an adhesive agent, by separating the supporting wafer from the chips or the wafer and thereafter removing the adhesive agent from the supporting wafer, is provided. The method includes an adhesive agent removing process including irradiating the adhesive agent remaining on the supporting wafer after separating the supporting wafer from the chips or the wafer with a laser beam to remove the adhesive agent.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A vitrified bond grindstone includes abrasive grains and a bonding material for fixing the abrasive grains, the bonding material includes a parent material containing SiO2 as a main constituent, a sintering assistant oxide, and ZnO, and the content of ZnO is 11 to 15 wt % in weight ratio based on the bonding material. Preferably, the content of the sintering assistant oxide is 20 to 29 wt % in weight ratio based on the bonding material.
B24D 3/10 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic for porous or cellular structure, e.g. for use with diamonds as abrasives
C03C 14/00 - Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
