The cutting method for a workpiece includes cutting an outer circumferential portion of one surface of the workpiece to form an annular step portion by causing a cutting blade to cut into a chamfered portion of the one surface of the workpiece held by a holding surface of a chuck table and rotating the chuck table. The cutting method also includes cutting a bottom portion of the annular step portion by relatively moving the chuck table and the cutting blade after the cutting the outer circumferential portion to form the annular step portion. The cutting the bottom portion of the annular step portion includes relatively moving the chuck table and the cutting blade along a longitudinal direction of a spindle on which the cutting blade is mounted in a state in which the height position of the spindle relative to the chuck table is kept.
A wafer manufacturing apparatus includes an ingot grinding unit for grinding an upper surface of an ingot to planarize the upper surface of the ingot, a laser applying unit for forming peel-off layers in the ingot at a depth therein, which corresponds to the thickness of a wafer to be produced from the ingot, from the upper surface of the ingot, a wafer peeling unit for holding the upper surface of the ingot and peeling off a wafer from the ingot at the peel-off layers, a tray having an ingot support portion and a wafer support portion, and a belt conveyor unit for delivering the ingot supported on the tray between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.
A wafer processing method includes forming a ring-shaped modified layer by holding a second wafer of a bonded wafer on a holding table and applying a laser beam with a focal point of the laser beam positioned on an inner side adjacent to a chamfered portion formed at an outer periphery of a first wafer of the bonded wafer; loading the bonded wafer onto a grinding apparatus for grinding the first wafer of the bonded wafer; and grinding the first wafer to thin the first wafer and remove the chamfered portion formed at the outer periphery of the first wafer by a grinding force. The loading or the grinding includes supplying a fluid for weakening a bonding force to an interface of the chamfered portion at which the first wafer and the second wafer are bonded.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 41/06 - Work supports, e.g. adjustable steadies
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
4.
GRINDING METHOD AND GROUND WAFER MANUFACTURING METHOD
A method for grinding a workpiece with a grinding apparatus including a holding table with a rotatable conical-shaped holding surface, a grinding unit including a spindle and grindstones, which grinds the workpiece by bringing the rotating grindstones into contact with the workpiece to thereby form a grinding surface lying along the holding surface, and a moving unit that moves the holding table and the grindstones relative to each other. The method includes holding the workpiece on the holding surface, grinding the workpiece by performing grinding feed where the holding table and the spindle approach each other along a rotational axis of the spindle with the workpiece and the grindstones contacting each other while the holding table and the spindle are independently rotated, and, after grinding the workpiece, stopping the grinding feed and moving the holding table and the spindle relative to each other while rotating the table and the spindle.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B24B 5/14 - Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfacesAccessories therefor involving centres or chucks for holding work for grinding conical surfaces, e.g. of centres
B24B 5/24 - Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfacesAccessories therefor involving centreless means for supporting, guiding, floating or rotating work for grinding conical surfaces
01 - Chemical and biological materials for industrial, scientific and agricultural use
07 - Machines and machine tools
17 - Rubber and plastic; packing and insulating materials
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Liquid chemicals for forming protective films on the surface
of semiconductor wafers; chemicals for removing protective
films formed on the surface of semiconductor wafers;
chemicals for releasing protective films formed on the
surface of semiconductor wafers; industrial chemicals. Metalworking machines and tools; semiconductor manufacturing
machines; semiconductor wafer cutting machines; laser
processing equipment for manufacturing semiconductors;
equipment for grinding semiconductor wafers; equipment for
cleaning semiconductor wafers; plasma etching equipment for
semiconductor wafers; equipment for forming protective films
for semiconductor wafers; equipment for removing protective
films for semiconductor wafers; semiconductor wafer
processing equipment. Protective sheets and films for semiconductor wafer
surfaces; releasing sheets and films for releasing
protective sheets for semiconductor wafer surfaces; adhesive
tapes for processing semiconductors and electronic
components used in the manufacture of semiconductor wafers
and electronic components; adhesive tapes, other than
stationery and not for cosmetic, medical or household
purposes; plastic film, other than for wrapping. Processing of semiconductor wafers; surface grinding of
semiconductor wafers; metal treatment of semiconductor
wafers; water treatment of semiconductor wafers; material
treatment of semiconductor wafers; custom manufacture of
semiconductor wafers.
6.
PEELING METHOD, WAFER PRODUCTION METHOD, AND BONDED WAFER
A peeling method of the present invention includes: a laser processing step of forming a processing layer in an SiCN film by applying, to a bonded wafer which includes a first wafer and a second wafer and in which a surface of the first wafer in which a first device and a first bonding film are formed on the surface is bonded to a surface of the second wafer in which a second bonding film including the SiCN film is formed on the surface via the first bonding film and the second bonding film, laser light having a wavelength transmissive to the second wafer from the second wafer side; and a peeling step of peeling the second wafer from the bonded wafer at the processing layer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
Provided is a method for cleaning a wafer that enables sufficient removal of cutting chips from the wafer surface. The method for cleaning a wafer includes: mounting a wafer 56 on a spinner table 4 such that a rear surface of the wafer 56 faces the spinner table 4 and a front surface 56a of the wafer 56 is exposed, the spinner table 4 being rotatable while holding the wafer 56; subjecting the front surface 56a of the wafer 56 to first cleaning with cleaning water supplied to the front surface 56a of the wafer 56, while rotating the spinner table 4; and subjecting the front surface 56a of the wafer 56 to second cleaning with ammonia water supplied to the front surface 56a of the wafer 56 using a brush. [Elected View] FIG. 6
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A wafer processing method for removing a chamfered portion of a first wafer that includes producing a provisionally bonded wafer in which first and second wafers are weakly bonded; forming a ring-shaped modified layer by applying a laser beam to an inner side adjacent to a chamfered portion formed at an outer periphery of the first wafer of the provisionally bonded wafer, and detaching the chamfered portion from the second wafer, with the modified layer serving as a starting point; and producing a completely strongly bonded wafer by annealing the provisionally bonded wafer. The wafer processing method further includes grinding and thinning the first wafer, with the second wafer being held on a chuck table constituting a grinding apparatus, and removing the chamfered portion of the first wafer that is detached from the second wafer, with the modified layer serving as a starting point.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A chuck table holds a wafer having an off-cut angle by suction for grinding with a grindstone. The chuck table includes a disk-shaped porous member and a path-length varying portion. The path-length varying portion creates a path-length difference in paths of the grindstone grinding the porous member such that a holder surface, formed by rotating the porous member about a rotation axis extending through a center of the porous member and grinding an upper surface of the porous member with the grindstone, has a height difference between one side and the other side across a line that extends through the center of the porous member.
A chip production method in which a workpiece having a plurality of planned dividing lines set on a side of a front surface of a substrate and a functional layer formed on the front surface is divided along the planned dividing lines to produce chips, includes: applying a laser beam along the planned dividing lines to remove respective parts of the functional layer and form, in the substrate, respective processed grooves having a depth smaller than a finished thickness; processing a side of a back surface of the substrate to thin the substrate to the finished thickness; and after the processing, imparting an external force to the workpiece to divide the workpiece into a plurality of chips along the processed grooves.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
11.
POLISHING SURFACE DRESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE
A polishing surface dressing method includes: a dressing step of dressing a polishing surface; a polishing surface shape measuring step of measuring the shape of the polishing surface based on a displacement amount in a first direction orthogonal to the polishing surface and a movement position in the second direction of the dressing section that is in contact with the polishing surface; a determination step of determining appropriateness of the shape of the polishing surface measured in the polishing surface shape measuring step; and a condition change step of changing a contact condition in which the dressing section makes contact with the polishing surface in the dressing step, when the shape of the polishing surface is determined to be “No Good”, and the dressing step is performed again based on the contact condition changed in the condition change step.
A manufacturing method of a second substrate by separating, as the second substrate, a part of a small thickness portion of a first substrate including a protruding portion and the small thickness portion surrounded by the protruding portion, the first substrate having one surface to which a protective member is fixed, includes setting an inner circumferential edge of a removal region in the small thickness portion, where the inner edge defines an external shape of the second substrate, setting an outer circumferential edge of the removal region such that the outer edge of the removal region is located at a middle point between the inner edge and a boundary between the small thickness portion and the protruding portion or located outward of the middle point in a radial direction of the first substrate, and separating the second substrate from the first substrate by removing the removal region.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A manufacturing method of manufacturing a second substrate by separating, as the second substrate, a part of a small thickness portion of a first substrate including a protruding portion and the small thickness portion surrounded by the protruding portion is provided. The first substrate has one surface to which a protective member is fixed. The method includes setting an inner edge of a removal region in the small thickness portion located inward of an outer edge of a holding surface, setting an outer edge of the removal region to a middle point between the inner edge of the removal region and the outer edge of the holding surface or to a point outward of the middle point, separating the second substrate from the first substrate by removing the removal region, and peeling off the protruding portion and the small thickness portion outside of the removal region from the protective member.
This slide glass (1) is formed from at least one selected from the group consisting of quartz, rock crystal, silicon, sapphire, etc. Further, a plurality of first metal lines (21) extending in a first direction (x) and arranged at a prescribed spacing and a plurality of second metal lines (22) extending in a second direction (y) and arranged at a prescribed spacing are provided on a part of a surface (1a) on which a biological sample is to be placed or the like. A plurality of sub-regions (3) are defined by the metal lines (21, 22), and the metal lines (21, 22) are formed from at least one metal selected from the group consisting of Re, Ir, Ta, Ni, Cr, Pt, Au, Ti, and Si.
G01N 27/62 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosolsInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electric discharges, e.g. emission of cathode
A method is of manufacturing a plurality of devices by dividing a device wafer along a plurality of planned dividing lines intersecting each other, the device wafer having a device surface on which each of the devices is formed in each of regions partitioned by the planned dividing lines. The method includes: directly bonding a carrier plate to the device surface of the device wafer; after the bonding of the carrier plate, dicing the device wafer supported by the carrier plate along the planned dividing lines to thereby form a plurality of devices; and after the forming of the plurality of devices, separating the plurality of devices from the carrier plate.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/463 - Mechanical treatment, e.g. grinding, ultrasonic treatment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer production method for producing, from a workpiece being a nitride or oxide semiconductor, a wafer thinner than the workpiece, includes holding a back surface of the workpiece; forming a separation layer in an outer peripheral region of the held workpiece as defined herein; forming a separation layer in an inner region inside the outer peripheral region of the workpiece as defined herein, after the forming of the separation layer in the outer peripheral region; and separating a plate-shaped object from the workpiece as the wafer with the separation layers formed in the outer peripheral region and the inner region as a start point, and the forming of the separation layer in the outer peripheral region includes forming the separation layer at an inner position, and forming the separation layer at an outer position after the forming of the separation layer at the inner position.
B23K 26/55 - Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
A grinding apparatus for grinding a wafer includes a chuck table, a grinding unit, an elevating mechanism, a grinding water supply device, a spray nozzle, a thickness measuring device, and a controller to control spraying water from a spray nozzle toward the wafer so as to expand or contract the chuck table via the wafer and thereby changing a height of a holding surface such that warm water is sprayed toward a position, of which thickness value among thickness values measured by the thickness measuring device indicates a thickness greater than a preset target thickness, or a position, of which thickness value indicates a thickness greater than an average value of the thickness values; or cold water is sprayed toward a position, of which thickness value indicates a thickness less than the preset target thickness, or a position, of which thickness value indicates a thickness less than the average value.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
18.
GRINDING APPARATUS, GRINDING METHOD, AND DIAMOND SUBSTRATE GENERATION METHOD
A grinding apparatus capable of easily processing an end surface of a diamond substrate into a planar surface, where the grinding apparatus includes a holding unit for holding the diamond substrate, a grinding unit including a grinding tool for grinding the end surface of the diamond substrate held by the holding unit, and a grinding feed unit for grinding-feeding the grinding unit in a direction that brings the grinding unit closer to and away from the end surface of the diamond substrate held by the holding unit. The grinding tool has a base and a grinding blade mounted on the base. The grinding blade is made of iron and acts on the end surface of the diamond substrate to cause a reaction between the iron and carbon of diamond and generate a compound containing austenite, thereby grinding the end surface of the diamond substrate.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A bonding apparatus includes: a first holder configured to hold a first substrate; a second holder disposed to face the first holder and configured to hold a second substrate to be bonded to the first substrate; an imaging unit including a first portion including a first objective lens that captures an image of a first mark formed on the first substrate held by the first holder, and a second portion including a second objective lens that captures an image of a second mark formed on the second substrate held by the second holder; and a mover configured to relatively move the imaging unit, first holder, and second holder in a region between the first holder and the second holder. In the imaging unit, an optical axis of the first objective lens and an optical axis of the second objective lens are not on a same straight line.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
20.
TAPE MOUNTER, PROCESSING APPARATUS, AND METHOD FOR PROCESSING WORKPIECES
A tape mounter configured to attach at least one workpiece to a tape, which is attached to a ring frame to close an opening in the ring frame, includes frame rails configured to support a frame set, in which the tape is attached to the ring frame to close the opening; a workpiece movement assembly configured to move the at least one workpiece onto the tape in the frame set supported by the frame rails; a table configured to support a surface of the tape on an opposite side to an attaching surface of the ring frame; and an attaching assembly configured to attach the at least one workpiece moved by the workpiece movement assembly to the attaching surface of the tape supported by the table.
A method of thinning down a workpiece having a first region and a second region that are layered together includes acquiring a thickness of the first region, thinning down the second region by bringing a processing tool into contact with the workpiece held on a holding table, measuring a thickness of the second region of the workpiece that has been thinned down, adjusting a positional relation between the processing tool and the holding table by referring to a total thickness of the workpiece that includes the thickness of the first region and the thickness of the second region, and thinning down the workpiece by bringing the processing tool into contact with the workpiece held on the holding table.
There is provided a separation method for an object by which the object held by a holding surface is separated from the holding surface. The separation method includes ejecting a liquid from the holding surface in a state in which the object is held by the holding surface, separating the holding surface and the object while keeping a state in which the liquid is in contact with both the holding surface and the object by causing the holding surface and the object to relatively move in such a direction as to separate from each other after the ejecting the liquid from the holding surface, and removing the liquid in contact with both the holding surface and the object after the separating the holding surface and the object.
B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
23.
METHOD OF MANUFACTURING LAMINATED WAFER WITH PROCESSED OUTER CIRCUMFERENCE, METHOD OF MANUFACTURING DEVICE CHIPS, AND APPARATUS FOR PROCESSING LAMINATED WAFER
A method of manufacturing a laminated wafer with a processed outer circumference includes acquiring a value of joint misalignment between a first wafer and a second wafer of the laminated wafer by measuring the positions of outer circumferences of the first and second wafers, holding the second wafer of the laminated wafer on a holding surface of a holding mechanism, acquiring the position of the first wafer with respect to the holding mechanism while the laminated wafer is being held by the holding mechanism, acquiring the position of the second wafer with respect to the holding mechanism on the basis of the acquired value of joint misalignment and the acquired position of the first wafer, and processing the outer circumference of the first wafer on the basis of the acquired position of the second wafer as a reference.
H01L 21/463 - Mechanical treatment, e.g. grinding, ultrasonic treatment
B24B 37/005 - Control means for lapping machines or devices
B24B 51/00 - Arrangements for automatic control of a series of individual steps in grinding a workpiece
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A processing apparatus includes: a holding unit configured to hold a workpiece; a processing unit configured to process the workpiece; and a microscope configured to observe the workpiece. The microscope includes: a light receiving element; a first lens configured to condense light from an inside of the workpiece; a second lens configured to condense the light condensed by the first lens to form an intermediate image; and an imaging optical system configured to form the light from the intermediate image on the light receiving element. The imaging optical system has an optical axis inclined with respect to an optical axis of the second lens and is configured to form, on the light receiving element, an inclined surface inclined in a direction not orthogonal to the optical axis of the second lens in the intermediate image.
A method of separating a carrier bonded to a workpiece by a temporary adhesive layer from the workpiece includes forming a separation initiating point in the temporary adhesive layer by inserting a protrusive member into the temporary adhesive layer in such a manner that the protrusive member enters between the workpiece and the carrier and, after the separation initiating point has been formed in the temporary adhesive layer, applying external forces respectively to the workpiece and the carrier to separate the carrier from the workpiece.
B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A wafer production method for producing a wafer from a workpiece having a first surface and a second surface that is in an opposite side of the first surface. The wafer production method includes: forming a separation start point including a modified region and a crack extending from the modified region by setting a focal point of a laser beam having a transmission wavelength at a position deeper than the first surface of the workpiece and applying the laser beam to the workpiece from the first surface; and separating, as the wafer, a plate-shaped object including the first surface of the workpiece from the separation start point by applying an ultrasonic wave to the first surface of the workpiece. The workpiece in the separating has a substrate attached to the second surface.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 103/00 - Materials to be soldered, welded or cut
27.
MANUFACTURING METHOD FOR DIVIDING PROCESSING PRODUCTS AND PROCESSING APPARATUS
There is provided a processing apparatus for dividing processing products that divides a workpiece into a plurality of dividing processing products. This processing apparatus for dividing processing products includes a conveyor that has a conveying surface on which the workpiece is placed and conveys the workpiece placed on the conveying surface and an irradiation mechanism that irradiates the workpiece with a laser beam. The processing apparatus irradiates the workpiece that is placed on the conveying surface of the conveyor and is being conveyed and moved with the laser beam to execute dividing processing for a dividing-target element of the workpiece.
A grinding apparatus includes a chuck table rotatable about a table rotational axis, a grinding unit including a spindle having a grinding wheel fitted to a lower end thereof, an inclination adjusting unit that adjusts inclination of one of or both the table rotational axis and the spindle, a thickness measuring instrument that measures a thickness of a workpiece, and a controller, the controller including a necessary adjustment amount calculating section that calculates an adjustment amount necessary for adjustment of the inclination as a necessary adjustment amount in reference to thickness information of the workpiece being ground, an actual adjustment amount calculating section that calculates an actual adjustment amount by multiplying the necessary adjustment amount by an adjustment rate, and an adjustment control section that adjusts the inclination by the actual adjustment amount.
A wafer processing method including applying a laser beam to the wafer along projected dicing lines of the wafer while focusing the laser beam within the wafer, thereby forming modified layers in the wafer along the projected dicing lines, after the modified layers have been formed in the wafer, affixing a first tape to a reverse side of the wafer, after the first tape has been affixed to the reverse side of the wafer, developing cracks initiated from the modified layers in the wafer to divide the wafer into a plurality of device chips, and expanding the first tape to form gaps between the device chips, and after the gaps have been formed between the device chips, inserting a cutting blade into the gaps and causing the cutting blade to cut into side faces of the device chips, thereby cutting off the side faces of the device chips.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
30.
WAFER MANUFACTURING METHOD, LASER PROCESSING APPARATUS, AND WAFER MANUFACTURING APPARATUS
A method for manufacturing a wafer from an ingot includes: holding the ingot; applying a laser beam having a wavelength that transmits through the ingot from a front surface of the ingot and positioning a focal point of the laser beam at a position deeper than the front surface of the ingot to form a modified region, and relatively feeding the ingot and the focal point for processing to form a separation layer including a plurality of the modified regions inside the ingot; separating, from the ingot, a workpiece including the front surface of the ingot as the wafer, with the separation layer as a start point; and grinding a separation surface of the wafer to remove the modified region. In the applying, a depth of the focal point forming the modified region is changed to form the separation surface into a three-dimensional shape rather than a horizontal surface.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
A chip manufacturing method includes: preparing a wafer unit having a protective member fixed to one surface of a wafer and having a recess and a loop-shaped protrusion surrounding the recess on the other surface side of the wafer, the protective member including a first sheet in contact with the wafer, a resin layer stacked on the first sheet, and a second sheet stacked on the resin layer; processing the wafer and the protective member along a boundary between the recess and the loop-shaped protrusion to separate the recess and the loop-shaped protrusion from each other; and after separating of the recess and the loop-shaped protrusion, holding the protective member side of the wafer on a holding table and dividing the wafer from the other surface side to manufacture a plurality of chips.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A grinding apparatus including a chuck table whose holding surface is polygonal, a grinding unit, a moving unit, a load detection unit, and a controller, wherein the controller includes a load storage section, a holding surface grinding command section that controls a load applied to one (or both) the grinding unit and the chuck table, by controlling a parameter related to grinding processing when the holding surface is ground, and a workpiece grinding command section that controls a load that is the same type of load as that controlled by the holding surface grinding command section, by controlling the parameter related to grinding processing when a workpiece held on the holding surface is ground, and the controller controls the parameter related to grinding processing such that the load controlled by the holding surface grinding command section and the load controlled by the workpiece grinding command section have the same value.
A dressing apparatus dresses grindstones for grinding a workpiece by causing the grindstones and a dresser board to slide abrasively against each other. The dressing apparatus includes a board holder for holding the dresser board, a moving mechanism for moving the board holder and the grindstones relatively to each other in a direction transverse to a plane along which the grindstones abrasively slide against the dresser board, and a measuring instrument for detecting a load applied to the dresser board.
An optical processing apparatus for irradiating a workpiece with a laser beam is provided. The optical processing apparatus includes a laser oscillator configured to emit the laser beam, an irradiating unit configured to irradiate the workpiece with the laser beam emitted from the laser oscillator, an irradiating unit moving mechanism configured to move the irradiating unit, a plurality of optical elements arranged on an optical path of the laser beam emitted from the laser oscillator to guide the laser beam from the laser oscillator to the irradiating unit, and an adjustment moving mechanism configured to move the optical element with respect to a movement direction of the irradiating unit. Along with a movement of the irradiating unit, the adjustment moving mechanism moves the optical element in an opposite direction to the movement direction of the irradiating unit, thereby adjusting an optical path length of the laser beam.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
35.
PROTECTIVE MEMBER FORMING DEVICE, PROTECTIVE MEMBER FORMING METHOD, WORKPIECE MANUFACTURING METHOD, AND CHIP MANUFACTURING METHOD
A protective member forming device includes: a first holding unit; a second holding unit; a resin supply unit; a moving unit; and a controller, as defined herein, the controller includes an acquisition unit, a first movement controller configured to control the moving unit as defined herein, and a second movement controller configured to control the moving unit as defined herein, and the first movement controller is configured to set the first position to a position obtained by correcting a temporary first position, which is set in advance based on the reference thickness, based on a difference between the reference thickness and the actual thickness.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
36.
DEVICE CHIP PRODUCTION METHOD AND LASER PROCESSING APPARATUS
A method includes: a first processing step of forming a modified layer inside a workpiece by irradiating the workpiece with a laser beam having a wavelength that transmits through the workpiece along a first planned dividing line; a second processing step of forming a modified layer inside the workpiece by irradiating the workpiece with the laser beam along an adjacent planned dividing line adjacent to the first planned dividing line; and a position coordinate acquisition step of acquiring a position coordinate of a key pattern formed in a predetermined region of the workpiece along an extending direction of the adjacent planned dividing line, after the first processing step is performed, and in the second processing step, the adjacent planned dividing line is corrected based on the position coordinate of the key pattern, and the workpiece is irradiated with the laser beam along the corrected adjacent planned dividing line.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A laser processing apparatus includes a holding unit, a laser beam irradiating unit, a processing feed unit, a first resistance measuring apparatus including a first measurement head, and a controller, the controller being configured to, when irradiating a workpiece with a laser beam while moving the holding unit and a condenser relative to each other along a processing feed direction, measure electric resistance or electric resistivity of a measurement target region of the workpiece by using the first measurement head and maintain or change a condition for processing the workpiece by the laser beam to be applied to the measurement target region according to the electric resistance or the electric resistivity of the measurement target region.
A novel technology is proposed for a technology of configuring a laminated body in which a workpiece is laminated on a supporting substrate and then thinning the workpiece. A workpiece processing method includes an adhesive material supply step of laying an adhesive material on a supporting substrate, a facing step of causing a workpiece to face the adhesive material, a laminated body forming step of pressing the adhesive material with the workpiece to integrate the workpiece and the supporting substrate together and form a laminated body, a supporting substrate grinding step of grinding and planarizing an exposed surface of the supporting substrate of the laminated body, and a thinning step of, after the supporting substrate grinding step, thinning the workpiece to a predetermined thickness by grinding an exposed surface of the workpiece of the laminated body.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 41/06 - Work supports, e.g. adjustable steadies
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
39.
TRANSFER APPARATUS, FRAME UNIT TRANSFER METHOD, AND CHIP MANUFACTURING METHOD
A transfer apparatus includes a pad for holding a frame unit on a holding surface side thereof, a liquid supply unit configured to supply liquid to the holding surface side of the pad, and a moving mechanism configured to move the pad. The holding surface has a first area and a second area surrounding the first area and protruding with respect to the first area. In a state in which the first area faces a plate-shaped object and the second area surrounds the plate-shaped object, the frame unit is held on the holding surface side by use of interfacial tension of liquid in a still state, the liquid being supplied from the liquid supply unit and filling gaps between the first area and the plate-shaped object, and between the second area and the plate-shaped object, and then the moving mechanism moves the pad to transfer the frame unit.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A chip manufacturing method for manufacturing a plurality of chips by dividing a substrate along predetermined dicing lines includes forming a protective film on a surface of the substrate; removing the protective film along the predetermined dicing lines; dividing the substrate into the plurality of chips along the predetermined dicing lines by performing plasma-etching using the protective film remaining on the surface of the substrate as a mask; and chamfering peripheral regions of the chips by performing plasma-etching using the protective film as a mask.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Disclosed is an expansion method for expanding an expandable sheet of a workpiece unit including a plate-shaped workpiece, a first ring frame, and the expandable sheet attached to the workpiece and the first ring frame. A central area of the expandable sheet is pressed in directions inclined radially outward with respect to a direction perpendicular to an opening of the first ring frame, distances between respective chips formed as a result of division of the workpiece are increased, and the expanded expandable sheet is fixed to a second ring frame.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
42.
LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD
A laser beam processing apparatus, that allows to obtain a desired processing result for various workpieces without damaging a device during laser processing, is provided. The laser processing apparatus includes: a chuck table that holds a workpiece; a laser beam applying unit that applies a pulsed laser beam to the workpiece held on the chuck table; and a feeding unit that relatively feeds the chuck table and the laser beam applying unit for processing. The laser beam applying unit includes: an oscillator that oscillates a pulsed laser beam, and a condenser that collects the pulsed laser beam LB oscillated by the oscillator, and applies the pulsed laser beam to the workpiece held on the chuck table. A repetition frequency of the pulsed laser beam oscillated by the oscillator is set to at least a value determined by multiplying a thermal conductivity λ[W/(m·K)] of the workpiece by a coefficient β[MHz·m·K/W].
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
43.
LASER INTENSITY MEASURING DEVICE, LASER PROCESSING APPARATUS HAVING THE LASER INTENSITY MEASURING DEVICE, METHOD FOR MEASURING LASER INTENSITY, AND METHOD FOR LASER PROCESSING
A laser intensity measuring device includes a diffraction optical element configured to split a laser beam into a plurality of branch beams; an integrating sphere including an entrance port through which one of the laser beam or the plurality of branch beams enters the integrating sphere, an exit port through which at least one of the plurality of branch beams exits the integrating sphere, and an inner wall on which the other of the plurality of branch beams impinge; and a sensor configured to measure an intensity of the other of the plurality of branch beams reflected by the inner wall.
An ultraviolet irradiation system irradiates a delivery target with ultraviolet rays. The ultraviolet irradiation system includes a delivery path along which to deliver the delivery target to a treatment apparatus and an ultraviolet irradiator for irradiating the delivery target delivered along the delivery path with ultraviolet rays, in which the ultraviolet irradiator is disposed in the delivery path and includes an ultraviolet emitter for emitting ultraviolet rays.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
45.
TREATMENT METHOD FOR SHEET, MANUFACTURING METHOD FOR CHIP, AND MANUFACTURING METHOD FOR SUBSTRATE
There is provided a treatment method for a sheet by which treatment for the sheet fixed to an object is executed. The treatment method includes preparing the object to which the sheet is fixed, forming a light absorbing film that absorbs light and generates heat on a non-fixed region that is not fixed to the object in the sheet, and heating and shrinking the non-fixed region by irradiating the light absorbing film with the light and causing the light absorbing film to generate heat.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method for processing a substrate includes forming, in a state where the substrate and a film are integrated through a resin that cures due to an external stimulus, a laminate by semi-curing the resin by applying the external stimulus to the resin; processing the laminate; improving a curing degree of the resin by applying the external stimulus to the resin after processing of the laminate; and peeling the resin and the film from the substrate after improving of the curing degree.
B29C 41/12 - Spreading-out the material on a substrate
B24B 7/20 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
A laser processing apparatus includes a laser oscillator for emitting a laser beam, a polygon mirror having a plurality of reflective facets and rotatable for scanning the laser beam, a beam condenser for focusing the laser beam scanned by the polygon mirror, a detectable mark rotatable together with the polygon mirror, and a sensor for detecting the detectable mark, the sensor being not rotatable together with the polygon mirror. An irradiated facet that is irradiated with the laser beam is specified among the reflective facets on the basis of the detection of the detectable mark by the sensor.
A processing method for processing a wafer, on a surface on one side of which a recess and a ring-shaped protrusion surrounding the recess are formed, the surface having a protective member being fixed thereon, is provided. The processing method includes holding the one side of the wafer against a holder table, forming a protective film in a region including a boundary between the recess and the protrusion on the wafer held on the holder table, inspecting the protective film formed on the wafer, and cutting the wafer along the boundary, in a case where the protective film passes the inspection, by irradiating the boundary with a laser beam.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
49.
WORKPIECE PROCESSING PREPARATION METHOD AND PROCESSING METHOD
A processing method of thinning a sheet-shaped workpiece having an outer peripheral groove formed in an outer peripheral edge portion of a top surface thereof. The method includes the steps of: laying an adhesive material on a top surface of a supporting substrate; causing the sheet-shaped workpiece to face the adhesive material; pressing the adhesive material with the top surface of the workpiece to press-spread the adhesive material between the workpiece and the supporting substrate, and to fill the outer peripheral groove with the adhesive material; hardening the adhesive material with an external stimulus to form a laminated body; holding the supporting substrate side of the laminated body on a holding table to expose a back surface of the workpiece; and grinding the back surface of the workpiece with a grinding stone to thin the workpiece to a predetermined thickness.
B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 19/02 - Single purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
50.
BONDING MACHINE OF TAPE, BONDING METHOD OF TAPE, AND MANUFACTURING METHOD OF CHIPS
A bonding machine of bonding a self-adhesive tape to an object is provided. The bonding machine includes a holding table configured to hold the object, a frame table configured to support the frame such that the frame opposes the object, a bonding press element configured to press the self-adhesive tape against the object with the self-adhesive tape, the self-adhesive tape being held on the frame, held between the bonding press element and the object, and a bonding and moving mechanism configured to perform bonding press to move the bonding press element and the holding table relative to each other along a direction intersecting a direction of a pressing force of the bonding press element. The frame table is configured to support the frame in a non-parallel state with the holding table upon bonding press.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
51.
LASER PROCESSING APPARATUS AND LASER BEAM APPLYING METHOD
A laser processing apparatus includes a laser oscillator for emitting a laser beam, a polygon mirror having a plurality of reflective facets and rotatable for scanning the laser beam, a beam condenser for focusing the laser beam scanned by the polygon mirror, a position adjusting unit for adjusting irradiated positions where the reflective facets are irradiated with the laser beam, and a measuring unit for measuring the positions of irradiated regions that are irradiated with the laser beam scanned by the polygon mirror, in which the position adjusting unit adjusts the irradiated positions where the reflective facets are irradiated with the laser beam with respect to the respective reflective facets on the basis of the positions of the irradiated regions measured by the measuring unit with respect to the respective reflective facets.
A method of manufacturing a grindstone includes molding a mixture of materials including abrasive grains, an epoxy resin, and an amine-based hardener to a predetermined shape and leaving the mixture to stand until the epoxy resin is hardened by the amine-based hardener in a chemical reaction therewith, and the amine-based hardener has an amine value of 600 mgKOH/g or higher.
A wafer processing method for a wafer formed of a semiconductor material includes: preparing a wafer that includes a front surface, a back surface on a rear surface of the front surface, and a side surface ranging from the front surface to the back surface and includes a flat mirror surface portion indicating a crystal orientation of the wafer on the side surface; and grinding the back surface of the wafer prepared in the preparing to form a recess and form a projection surrounding the recess.
A method for processing a wafer to form a processing groove on the wafer along a predetermined dividing line, on at least a part of which a structure is formed, comprises forming a first processing groove by removing the structure partly and leaving at least an end portion of the structure, which includes at least one end of the structure in a widthwise direction of the predetermined dividing line, and forming a second processing groove along the predetermined dividing line by removing the end portion of the structure being left in forming the first processing groove.
H01L 21/77 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
B23K 26/364 - Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
A method for processing workpieces includes holding a first workpiece on a first holder device and holding a second workpiece made of a same material as the first workpiece on a second holder device, reducing roughness of the first workpiece and the second workpiece including moving the first workpiece and the second workpiece relatively while the first workpiece and the second workpiece are maintained in contact with each other to reduce roughness on contacting surfaces of the first workpiece and the second workpiece that contact each other, and supplying a polishing liquid to a contact area between the first workpiece and the second workpiece.
A processing apparatus is for processing a semiconductor wafer. The semiconductor wafer includes a front surface, a back surface of a rear surface of the front surface, a side surface extending from the front surface to the back surface, and has a flat mirror surface portion indicating a crystal orientation of the semiconductor wafer on the side surface. The processing apparatus includes: a placement table on which a wafer cassette configured to store the semiconductor wafer is placed, a detection unit that detects the flat mirror surface portion; and a transport unit that transports the semiconductor wafer whose flat mirror surface portion is detected by the detection unit to the wafer cassette placed on the placement table. The transport unit stores the semiconductor wafer into the wafer cassette such that the flat mirror surface portion is in a predetermined orientation with respect to the wafer cassette.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
57.
SEMICONDUCTOR WAFER, METHOD FOR PROCESSING SEMICONDUCTOR WAFER, AND PROCESSING APPARATUS
A semiconductor wafer has a first surface and a second surface which is a back surface opposite to the first surface. The semiconductor wafer has a circular shape having no cutout portion in a horizontal cross section.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A method of processing a wafer that does not leave residue from removal of a chamfered portion. The method includes: a first modified layer forming step of applying a laser beam to an inner side adjacent to a chamfered portion formed on an outer periphery of the first wafer by focusing the laser beam and transmitting through the first wafer to form a ring-shaped modified layer; and a second modified layer forming step of applying the laser beam to a bonded surface of the first and second wafers, by focusing the laser beam and transmitting through the first wafer to form a bonding-force reducing modified layer. In the second modified layer forming step, the bonding-force reducing modified layer is connected with a bottom portion of the ring-shaped modified layer formed in the first modified layer forming step, or a ring-shaped modified layer formed after the second modified layer forming step.
A method for reusing a supporting wafer, which has chips or a wafer bonded thereon with an adhesive agent, by separating the supporting wafer from the chips or the wafer and thereafter removing the adhesive agent from the supporting wafer, is provided. The method includes an adhesive agent removing process including irradiating the adhesive agent remaining on the supporting wafer after separating the supporting wafer from the chips or the wafer with a laser beam to remove the adhesive agent.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A vitrified bond grindstone includes abrasive grains and a bonding material for fixing the abrasive grains, the bonding material includes a parent material containing SiO2 as a main constituent, a sintering assistant oxide, and ZnO, and the content of ZnO is 11 to 15 wt % in weight ratio based on the bonding material. Preferably, the content of the sintering assistant oxide is 20 to 29 wt % in weight ratio based on the bonding material.
B24D 3/10 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic for porous or cellular structure, e.g. for use with diamonds as abrasives
C03C 14/00 - Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
A method for manufacturing packaged device chips by dividing a package substrate, on which device chips arrayed on a lead frame are sealed with a mold resin, along divide-preset lines, is provided. The method includes a package substrate forming step including forming the package substrate by sealing the device chips arrayed on supporting sections of the lead frame and electrodes, each having a recess which is open on a second surface side of the lead frame, with the mold resin; a recess coating step including coating each of the recesses at least partly with a coating material; a dividing step including dividing regions including the recesses coated with the coating material along the divide-preset lines to produce the packaged device chips; and a removing step including jetting a high-pressure fluid at the coating material coating the recesses to remove the coating material from the recesses.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
A wafer processing method is a method for annularly cutting a wafer along an outer periphery of the wafer with a cutting blade, and the method includes annularly cutting the wafer with the cutting blade along the outer periphery of the wafer while supplying a cutting fluid to the wafer, and cutting the wafer by changing a position of the cutting blade in a radial direction of the wafer, in which an amount of the cutting fluid supplied during cutting of a position where the cutting blade overlaps an outer peripheral edge of the wafer is set smaller than an amount of the cutting fluid supplied during cutting of a position where the cutting blade does not overlap the outer peripheral edge of the wafer.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The processing apparatus includes a holding means that holds a wafer; a laser beam applying unit that applies a pulsed laser beam onto the wafer held on the holding means; and process-feeding means that process-feeds the holding means and the laser beam applying unit relative to each other. The laser beam applying unit includes an oscillator that oscillates a pulsed laser beam; a splitting portion that splits the pulsed laser beam, oscillated by the oscillator, into a first optical path and a second optical path; a first condenser that is disposed on the first optical path and condenses the pulsed laser beam onto the wafer; a wavelength converter that is disposed on the second optical path and converts a wavelength of the pulsed laser beam oscillated by the oscillator; and a second condenser that condenses a pulsed laser beam, generated after the wavelength is converted, onto the wafer.
A sheet fixing apparatus includes an image capturing unit having a first camera for capturing images of a target surface of a workpiece before a sheet is fixed to the target surface and a controller for controlling the image capturing unit. The controller determines whether the foreign matter is attached to the target surface or not on the basis of a first image captured of the target surface by the first camera by controlling the image capturing unit to capture the first image before the sheet is fixed to the target surface.
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/88 - Investigating the presence of flaws, defects or contamination
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
65.
METHOD FOR PROCESSING WAFER AND PROCESSING APPARATUS
A method for processing a wafer into a preset thickness form by emitting a plasma-activated etching gas from an emitter toward one side of the wafer to etch the one side of the wafer includes a thickness distribution obtaining step including obtaining a thickness distribution of an entire surface on the one side of the wafer, a calculating step including calculating a position where the emitter emits the etching gas toward the wafer and an emitting amount of the etching gas to be emitted at the emitting position based on a difference between the thickness distribution obtained in the thickness distribution obtaining step and a preset finishing thickness distribution, and an etching step including emitting the etching gas of the etching amount at the etching position toward the one side of the wafer and etching the one side of the wafer to the preset thickness form.
B24B 49/04 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
66.
WAFER CLEANING APPARATUS, PROCESSING APPARATUS, AND PROCESSING METHOD
A wafer cleaning apparatus includes: a holding pad configured to hold a top surface of a wafer; a cleaning mechanism configured to clean part of an under surface of the wafer held on the holding pad; and a moving mechanism configured to relatively move the holding pad and the cleaning mechanism in a horizontal direction, wherein the cleaning mechanism includes: a cleaning tank; a cleaning water supply configured to supply cleaning water to the cleaning tank; and an ultrasonic oscillator arranged at the cleaning tank and configured to propagate ultrasonic oscillation to the cleaning water; and wherein the moving mechanism is configured to move the holding pad holding the wafer, whose under surface is partially in contact with the cleaning water raised higher than an opening of the cleaning tank, so as to clean the under surface of the wafer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
67.
SHEET FIXING APPARATUS AND METHOD OF MANUFACTURING COMBINATION OF WORKPIECE AND SHEET FIXED THERETO
A sheet fixing apparatus includes a preparing unit for preparing an individual sheet including a to-be-fixed region that is of a shape commensurate with a target surface of a workpiece and an excess region surrounding the to-be-fixed region, a fixing unit for fixing the to-be-fixed region of the individual sheet prepared by the preparing unit to the target surface, a removing unit for removing the excess region from the individual sheet after the to-be-fixed region has been fixed to the target surface by the fixing unit, and a controller for controlling the preparing unit, the fixing unit, and the removing unit. The controller controls the preparing unit to prepare the individual sheet by cutting off a portion that is to become the individual sheet from a stock roll of sheet after removing the foreign matter attached to the portion while withdrawing the portion from the stock roll of sheet.
B65H 35/00 - Delivering articles from cutting or line-perforating machinesArticle or web delivery apparatus incorporating cutting or line-perforating devices, e.g. adhesive tape dispensers
B65H 37/00 - Article or web delivery apparatus incorporating devices for performing specified auxiliary operations
B65H 41/00 - Machines for separating superposed webs
68.
CUTTING TOOL AND METHOD FOR MANUFACTURING CUTTING TOOL
Provided are a cutting tool with which it is possible to achieve exceptional processing accuracy as a cutting tool and to achieve high adhesive strength with respect to a base, and a method for manufacturing a cutting tool. This cutting tool comprises a base and a cutting edge that is brazed to the base. The cutting edge is provided with an HPHT single-crystal diamond substrate and a CVD single-crystalline diamond layer that is deposited on the HPHT single-crystal diamond substrate. The cutting edge and the base are bonded such that the CVD single-crystalline diamond layer of the cutting edge and the base face each other.
A laser processing apparatus includes a holding unit that has a flat holding surface, an oscillator that emits a laser beam, and a beam condenser that converges the laser beam emitted from the oscillator. The laser processing apparatus is capable of adjusting relative positions and orientations of the beam condenser and the holding unit such that the beam condenser faces a side surface of a workpiece held by the holding unit, and applying, from the side surface side to the workpiece held by the holding unit, the laser beam emitted from the oscillator and converged by the beam condenser.
A protective component formation apparatus includes: a spreading table; a holding table which holds a wafer; a first supplier configured to supply first liquid resin; a second supplier configured to supply second liquid resin having a lower bonding force than the first liquid resin; an elevation mechanism which is configured to spread the liquid resin by moving up and down the holding table and the spreading table relative to each other in a vertical direction; a curer which is configured to cure the liquid resin having been spread; and a controller which is configured to supply the second liquid resin to a central part of the first liquid resin, to spread the first liquid resin and the second liquid resin over the of one surface of the wafer by the elevation mechanism and to cure the first liquid resin and the second liquid resin by the curer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method of processing a wafer for solving problems where a chamfered portion is not completely removed from an outer periphery of the wafer. This method includes: preparing a processing apparatus, including a chuck table, cutting means including a rotatable cutting blade, and polishing means including a rotatable polishing blade; holding the wafer on the chuck table; removing the chamfered portion by rotating the chuck table, with the cutting blade being positioned on the outer peripheral surplus region of the wafer, and with the cutting blade rotating; and polishing a cut surface, from which the chamfered portion has been removed, into a mirror surface by rotating the chuck table, with the polishing blade being positioned on the outer periphery of the wafer that is held on the chuck table in a state where the chamfered portion has been removed, and with the polishing blade rotating.
A method of grinding a composite wafer includes the steps of: holding a support wafer of the composite wafer by a chuck table; the chuck table in a radial direction of the chuck table, measuring the thickness of an area which is part of the composite wafer and whose thickness is measured at least during finishing grinding, and storing the measured thickness and XY coordinates of a point of measurement of thickness on a horizontal surface, as thickness data; setting a specified area which is an area whose thickness is specified during the finishing grinding, by using the stored thickness data; and measuring the thickness of the specified area by using the XY coordinates of the specified area, and grinding a top surface of the composite wafer by a grinding stone until a measured thickness becomes equal to a finished thickness set in advance.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
73.
PROTECTIVE LAYER FORMING METHOD AND WORKPIECE PROCESSING METHOD
A new technique for removing warping and undulations in the shape of a workpiece, and a new technique for protecting a surface of a workpiece having projections and depressions without using a soft film are proposed. A protective layer forming method includes the steps of: coating a front surface of a workpiece with a water-soluble resin; pressing a liquid resin that cures in response to an external stimulus with a surface of the water-soluble resin coating the front surface of the workpiece and a resin film; and applying an external stimulus to the pressed liquid resin to cure the liquid resin.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A cutting method for cutting a workpiece is provided. This cutting method includes holding the workpiece including a crystal structure having a c-axis inclined with respect to a perpendicular to a surface and a c-plane perpendicular to the c-axis and cutting the workpiece along a planned cutting plane that is perpendicular to the surface and is inclined with respect to the c-plane by rotating a cutting blade having an annular cutting edge and making a tip portion of the cutting edge cut into the workpiece. In the cutting the workpiece, the tip portion is made to cut into the workpiece in a state in which a force in such an orientation as to bring an angle formed by the planned cutting plane and the tip portion close to 0° acts on the cutting edge from the workpiece when the tip portion is made to cut into the workpiece.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
There is provided a detection method for detecting a mark that is formed at an outer peripheral edge of a semiconductor wafer. The detection method includes rotating the semiconductor wafer relative to measurement light in one direction, receiving the measurement light transmitted or reflected by the mark, and detecting that received light intensity of the measurement light has started decreasing after reaching a maximum value, then rotating the semiconductor wafer relative to the measurement light in an opposite direction and receiving the measurement light transmitted or reflected by the mark, determining an area where the received light intensity of the measurement light takes the maximum value as a center of the mark, and, after the rotating the semiconductor wafer relative to the measurement light in the opposite direction and receiving the measurement light transmitted or reflected by the mark, stopping the rotation at the center of the mark.
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
76.
PROTECTIVE MEMBER FORMING APPARATUS AND METHOD FOR FORMING A PROTECTIVE MEMBER
A protective member forming apparatus includes a holder table configured to hold a sheet on a holder surface, a sheet feeder assembly configured to feed the holder table with the sheet, an attaching assembly configured to attach the sheet held on the holder table to a wafer, a light configured to irradiate the sheet held on the holder table, a camera configured to capture an image of the sheet, and a determining unit configured to determine whether air remains between the holder table and the sheet or not based on a difference in color tones, brightnesses, or colors in the image captured by the camera.
B05C 9/12 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
77.
FRAME UNIT FORMING METHOD, FRAME UNIT FORMING APPARATUS, AND METHOD OF FORMING DEVICE CHIPS
A frame unit forming method includes disposing a wafer on an opening portion of an annular frame, forming a frame unit by disposing a thermocompression bonding sheet on the wafer and an outer periphery of the annular frame and integrating the wafer with the annular frame by the thermocompression bonding sheet, and, activating, before forming the frame unit, a surface of the thermocompression bonding sheet on a side which is to be disposed on the wafer and the annular frame, by applying plasma processing or corona treatment to the surface of the thermocompression bonding sheet.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
78.
METHOD FOR GRINDING PLATE-FORMED WORKPIECE AND GRINDING APPARATUS
A method for grinding a plate-formed workpiece having a raised center with a grindstone is provided. The method includes a first holding process including suctioning and holding the plate-formed workpiece against a holder surface of a first chuck table, which is in a shape where a center is raised with respect to an outer circumference thereof; a reaction-force reducing grinding process including grinding a central part of the plate-formed workpiece with the grindstone to reduce a reaction force against a flattening force to be applied to the plate-formed workpiece; a second holding process including suctioning and holding the plate-formed workpiece against a holder surface of a second chuck table, which spreads in parallel to a lower surface of the grindstone; and a finish-grinding process including grinding to finish the plate-formed workpiece with the grindstone.
B24B 7/07 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor involving a stationary work-table
79.
METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE
A method for manufacturing a gallium nitride substrate from a gallium nitride ingot includes: holding the gallium nitride ingot; forming a separating layer at a depth corresponding to a thickness of the gallium nitride substrate to be manufactured, by positioning a focal point of a laser beam inside the gallium nitride ingot and relatively moving the gallium nitride ingot and the focal point along a direction of a crystal orientation represented by the following formula (1) of the gallium nitride ingot; and separating the gallium nitride substrate from the gallium nitride ingot with the separating layer as a starting point. The separating includes forming a plurality of focal points by branching the laser beam and setting the focal points such that a straight line connecting the branched focal points is along a direction parallel to a direction of a crystal orientation represented by the following formula (2).
A method for manufacturing a gallium nitride substrate from a gallium nitride ingot includes: holding the gallium nitride ingot; forming a separating layer at a depth corresponding to a thickness of the gallium nitride substrate to be manufactured, by positioning a focal point of a laser beam inside the gallium nitride ingot and relatively moving the gallium nitride ingot and the focal point along a direction of a crystal orientation represented by the following formula (1) of the gallium nitride ingot; and separating the gallium nitride substrate from the gallium nitride ingot with the separating layer as a starting point. The separating includes forming a plurality of focal points by branching the laser beam and setting the focal points such that a straight line connecting the branched focal points is along a direction parallel to a direction of a crystal orientation represented by the following formula (2).
1 0 1 0 formula (1)
A method for manufacturing a gallium nitride substrate from a gallium nitride ingot includes: holding the gallium nitride ingot; forming a separating layer at a depth corresponding to a thickness of the gallium nitride substrate to be manufactured, by positioning a focal point of a laser beam inside the gallium nitride ingot and relatively moving the gallium nitride ingot and the focal point along a direction of a crystal orientation represented by the following formula (1) of the gallium nitride ingot; and separating the gallium nitride substrate from the gallium nitride ingot with the separating layer as a starting point. The separating includes forming a plurality of focal points by branching the laser beam and setting the focal points such that a straight line connecting the branched focal points is along a direction parallel to a direction of a crystal orientation represented by the following formula (2).
1 0 1 0 formula (1)
1 1 2 0 formula (2)
A sheet processing method for processing a sheet fixed to a target object includes preparing the target object to which the sheet is fixed, bringing a light absorbing member configured to generate heat by absorbing light into contact with an unfixed region not fixed to the target object in the sheet, and heating and shrinking the unfixed region by making the light absorbing member generate heat through irradiation of the light absorbing member with the light.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
81.
WAFER PROCESSING METHOD AND WAFER PROCESSING APPARATUS
A wafer processing method includes: holding a first side of a wafer on a first holding surface of a first holder; supplying a liquid protection member to at least one of a second side of the wafer held by the first holder or a second holding surface of a second holder facing the first holder; bringing the first holding surface and the second holding surface relatively close to each other and coating the second side of the wafer with the protection member; curing the protection member; and before the curing, controlling a shape of at least one of the wafer held by the first holder or the protection member by applying an external force to at least one of the wafer held by the first holder or the supplied protection member.
A processing method for a bonded wafer includes forming, in an outer peripheral portion of a first wafer, a first step portion having a depth that does not reach a second wafer and by which the first wafer remains, and removing the outer peripheral portion of the first wafer by rotating the holding table about a rotational shaft in a state in which a lower end of a second cutting blade is positioned to a position where a joining layer is present, in which, in the removing the outer peripheral portion of the first wafer, the second cutting blade and the holding table are rotated such that the direction of the velocity vector of the lower end of the second cutting blade becomes opposite the direction of the velocity vector of the bonded at a position corresponding to the lower end of the second cutting blade.
A processing apparatus includes a cassette stage for mounting a cassette thereon, a chuck table to suction-hold a wafer, a processing unit to process the wafer that is held on the chuck table, a processing table that is used to perform a predetermined processing on a wafer, a robot equipped with a robot hand that has a wafer presence sensor to detect a presence or absence of a wafer and holds a wafer to unload or load the wafer from or into the cassette mounted on the cassette stage, and a controller that uses the wafer presence sensor of the robot hand to detect whether a wafer is present on the processing table.
B24B 37/005 - Control means for lapping machines or devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
84.
PROCESSING METHOD AND COMPUTER-READABLE STORAGE MEDIUM
A processing method is a method of processing a workpiece including a base material and a device layer formed on the base material. The workpiece has a plurality of planned division lines. The device layer is formed by stacking a plurality of layers. The processing method includes: denaturing a specific layer constituting the device layer by applying a laser beam along the planned division lines of the workpiece via the base material; and after denaturing the specific layer, by applying a laser beam along the planned division lines, forming a modified layer along the planned division lines in the base material and forming a crack extending from the modified layer for dividing the device layer.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
A processing method includes forming a recess circumferentially along a support plate including a face having a size equal to or larger than the diameter of a device region and supporting a device wafer, in an outer circumferential region of the face that is positioned outwardly of a central region thereof that is commensurate with the device region, affixing the face of the support plate and the face side of the device wafer to each other with use of at least resin supplied to the recess, thinning down the device wafer by grinding or polishing or by grinding and polishing a reverse side of the device wafer, removing a region of the resin circumferentially along the device wafer, thereby to reduce a bonding force between the device wafer and the support plate, and separating a portion of the device wafer that includes the device region from the support plate.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
86.
LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD
A laser processing apparatus includes: a holding unit configured to hold a workpiece; an oscillator configured to generate a laser beam; a splitter element configured to split the laser beam generated by the oscillator into a first laser beam and a second laser beam; a rotation mechanism configured to rotate the splitter element about an axis passing through a center of the splitter element; and a focusing unit including a focusing lens configured to focus the first laser beam split by the splitter element onto the workpiece held by the holding unit and to focus the second laser beam split by the splitter element onto the workpiece held by the holding unit.
A method for forming a holder surface of a chuck table by rotating a spindle, to which an annular grinding stone is attached, and grinding an upper surface of the chuck table with the grinding stone rotated along with the spindle. The chuck table includes a porous member and a frame having a dense body in an annular shape. The method includes a first grinding process including tilting an axis of the chuck table with respect to an axis of the spindle relatively at a predetermined first angle and grinding an entire upper surface of the frame with the grinding stone, and a second grinding process including tilting the axis of the chuck table with respect to the axis of the spindle relatively at a second angle, which is smaller than the first angle, and grinding an entire upper surface of the porous member with the grinding stone.
B24B 41/06 - Work supports, e.g. adjustable steadies
B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
B24B 7/04 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor involving a rotary work-table
88.
WORKPIECE PROCESSING PREPARATION METHOD AND PROCESSING METHOD
A workpiece processing preparation method includes laying first resin on a table, causing a planar member held by a holding pad to face and be pressed against the first resin laid on an upper surface of the table to obtain an integrated body, solidifying with an external stimulus the first resin sandwiched between the planar member and the table, and thereby forming a first resultant, peeling the planar member from the first resultant to form a first resin layer, laying a sheet on an upper surface of the first resin layer after forming the first resin layer, and laying second resin on the sheet.
A cleaning apparatus including a cleaning unit configured to clean a cleaning object includes a supporting portion, which is located on a side of a first surface of the cleaning object and is configured to support the cleaning object; and at least one first supply port, from which a rotational fluid is supplied to the cleaning object supported by the supporting portion. The cleaning apparatus is configured to clean the cleaning object while the cleaning object is rotated by the rotational fluid supplied from the at least one first supply port.
A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], included in crystal orientations <100> at an angle of 5° or less, thereby forming a peel-off layer that functions as separation initiating points between a part of the monocrystalline silicon wafer that belongs to the face side thereof and a part of the monocrystalline silicon wafer that belongs to the reverse side thereof.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 103/00 - Materials to be soldered, welded or cut
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
91.
PROCESSING APPARATUS AND POLISHING SURFACE SHAPING METHOD
A processing apparatus includes a chuck table having a holding surface for holding a workpiece thereon, a chuck table rotary actuator for rotating the chuck table, a polishing unit on which a polishing pad having a polishing surface for polishing the workpiece is mounted, a polishing pad rotary actuator for rotating the polishing pad, a polishing moving mechanism for moving the chuck table and the polishing pad relatively to each other, a shape measuring instrument for measuring a shape of the holding surface, a shaping mechanism for shaping the polishing surface while in contact therewith, a shaping moving mechanism for moving the polishing pad and the shaping mechanism relatively to each other, and a controller for making the polishing surface complementary in shape to the holding surface.
A processing device for processing a workpiece includes: a holding table that holds the workpiece; a processing unit that performs processing on the workpiece held on the holding table; an abnormality detection unit that detects an abnormality of the workpiece; and a control unit that controls at least the processing unit and the abnormality detection unit. The control unit includes: a registration unit that registers first reference information serving as a reference for determining that the workpiece before processing is normal; and a comparison unit that compares the first reference information registered in the registration unit with first detection information obtained by detecting the workpiece by the abnormality detection unit before the workpiece is processed by the processing unit.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A substrate manufacturing method includes peel-off layer forming of forming a plurality of rows of peel-off layers inside a workpiece, and, after the peel-off layer forming, separating the workpiece with the plurality of rows of peel-off layers being used as separation initiating points, to manufacture substrates. The peel-off layer forming includes first processing of forming a plurality of rows of first peel-off layers each including a modified portion and each being spaced from one another, and second processing of, after the first processing, forming a plurality of rows of second peel-off layers each including a modified portion and a crack extending from the modified portion and each being located between a pair of adjacent first peel-off layers of the plurality of rows of first peel-off layers.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/082 - Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
B23K 26/40 - Removing material taking account of the properties of the material involved
A dividing method of a wafer includes cutting a front surface of the wafer to a predetermined depth with a cutting blade to form bottomed cut-grooves, applying a water-soluble liquid resin to the front surface of the wafer and drying the water-soluble liquid resin to fill the cut-grooves with the resulting dried water-soluble resin, grinding the wafer at the back surface thereof with grinding stones, so that the cut-grooves are allowed to appear in the back surface of the wafer and the wafer is divided into individual chips, and ejecting rinse water against the wafer, which has been divided into the chips, to remove the water-soluble resin.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A substrate manufacturing method includes applying a laser beam of a wavelength transmittable through a material of a workpiece, thereby forming a peel-off layer inside the workpiece, and after the forming of the peel-off layer, with the peel-off layer as a starting point of separation, separating the workpiece, thereby manufacturing a substrate. In the forming of the peel-off layer, by alternately repeating moving the workpiece and a focusing point at which the laser beam is focused relative to each other along a first direction, in a state in which the focusing point is positioned inside the workpiece, and moving the workpiece and a position at which the focusing point is formed relative to each other along a second direction perpendicular to the first direction, the peel-off layer including first modified portions and second modified portions which are alternately lined up in the second direction is formed.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/067 - Dividing the beam into multiple beams, e.g. multi-focusing
B23K 103/00 - Materials to be soldered, welded or cut
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
96.
POLISHING APPARATUS, AND METHOD FOR POLISHING SiC WAFERS
A polishing apparatus for polishing SiC wafers includes at least two chuck tables configured to hold the SiC wafers; a turntable, on which the at least two chuck tables are arranged; a polishing assembly configured to polish a surface of one of the SiC wafers held on one of the at least two chuck tables located at a polishing position with a polishing pad; and a C-surface polishing assembly configured to, while the surface of the one of SiC wafers held on the one of the at least two chuck tables located at the polishing position in the polishing assembly is being polish-processed, polish a C surface of another SiC wafer held on another of the at least two chuck tables not located at the polishing position with a C-surface polishing pad. The polishing assembly and the C-surface polishing assembly polish the respective surfaces of each of the SiC wafers.
B24B 37/08 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
A chuck table is configured to suction and hold a plate-shaped workpiece on a holder surface. The chuck table includes a base having a holder surface region on an upper surface thereof, a plurality of suction holes which are arranged in the holder surface region, formed through to a lower surface of the base, and connectable with a suction source, and an elastic member made of an elastomer having a predetermined thickness. The elastic member is arranged entirely in the holder surface region and forms the holder surface.
A chuck table used while grinding a flat plate-shaped workpiece having four or more corners in plan view, the chuck table including a holding surface partitioned into a circular first region surrounded by a polygonal second region that has an outer periphery having four or more corners, in plan view, in which the holding surface is shaped such that the center of the first region is the lowest point and the height increases as the distance from the center increases, and the angle formed between the reference tangent plane of the holding surface at the center of the first region and the first tangent plane of the holding surface at points other than the center that are included in the first region is smaller than the angle formed between the reference tangent plane and a second tangent plane of the holding surface at points included in the second region.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 7/04 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor involving a rotary work-table
A peeling apparatus to peel a protective member from a first surface of a plate-formed workpiece includes a holder table having a holder surface to hold a second surface of the workpiece and a peeling assembly to peel the protective member from the workpiece held on the holder table. The peeling assembly includes a gripping unit to grip the protective member, a horizontal movement assembly to move the gripping unit and the holder table relatively in a horizontal direction, a separating assembly to separate the gripping unit gripping the protective member from the holder table, an interior angle setting unit to set an interior angle between the protective member adhered to the first surface of the workpiece and the protective member being peeled, and a controller to maintain the interior angle at an angle set by the interior angle setting unit while the protective member is being peeled.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01L 5/00 - Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method for manufacturing a molded article having a desired shape from a workpiece includes: forming a shield tunnel including a pore extending from a surface of the workpiece to a predetermined depth in a thickness direction and a modified region surrounding the pore by positioning a concentration region of a first laser beam inside the workpiece and irradiating the workpiece with the first laser beam along the desired shape; forming a separation layer including a modified portion parallel to the first surface and a crack extending from the modified portion by positioning a concentration point of a second laser beam at a depth corresponding to a thickness of the molded article, relatively moving the concentration point and the workpiece, and irradiating the workpiece with the second laser beam; separating the workpiece into first and second workpieces; and dividing the molded article from the first workpiece along the shield tunnel.
