Provided are a silver powder having powder physical properties enabling reduction of volume resistivity after firing and a method of producing this silver powder. The silver powder has a tap density of 4.8 g/mL or more, a TAP/D50 value (value determined by dividing the tap density (g/mL) by the volume-based median diameter (μm)) of not less than 7 and not more than 15, and a specific surface area of not less than 0.75 m2/g and not more than 1.3 m2/g.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
A GaAs wafer group consists of all GaAs wafers having an orientation flat after a step of cleaving the orientation flat, all GaAs wafers consisting of a plurality of GaAs wafers having an identical off angle obtained from an identical GaAs ingot. The mean value of orientation flat orientation accuracies of the GaAs wafer group is within ±0.010°, and the standard deviation of the orientation flat orientation accuracies of the GaAs wafer group is 0.009° or less.
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
3.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
4.
SEMICONDUCTOR LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-RECEIVING ELEMENT
Provided is a semiconductor light-receiving element having low dark current despite having an optical filter, and a method for manufacturing the semiconductor light-receiving element. A semiconductor light-receiving element according to the present disclosure comprises a substrate, a semiconductor laminate having a light-receiving part, and an upper surface electrode, the upper surface electrode having a frame-shaped electrode and a pad electrode connected to a part of the frame-shaped electrode, the frame-shaped electrode being disposed so as to surround the light-receiving part of the semiconductor laminate in a top view, the light-receiving element having an optical filter that covers the entire surface on the semiconductor laminate and the frame-shaped electrode excluding an outer connection surface of the pad electrode, and the resistivity of the optical filter being 3.0 × 1012 Ωμm or greater.
H10F 30/221 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
2344, and is characterized by having, between the uppermost layer and the protective film (91), an intermediate layer which is observed to be darker than the uppermost layer and the protective film (91) in a cross-sectional TEM image.
H10F 30/222 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
Provided are an ultraviolet light-emitting element with which high light emission output is obtained and a method of producing the same. The ultraviolet light-emitting element includes a transparent substrate having a main surface that constitutes a light extraction surface, an AlN layer on the transparent substrate, an n-type semiconductor layer on the AlN layer, a quantum well-type light-emitting layer on the n-type semiconductor layer, a p-side semiconductor layer directly on the quantum well-type light-emitting layer, and a reflective electrode directly on the p-side semiconductor layer. A side surface of the transparent substrate is a rough surface. Thickness L (nm) of the p-side semiconductor layer satisfies 2L/cos θ=λ(2k+1)/2n.
H10H 20/855 - Optical field-shaping means, e.g. lenses
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/832 - Electrodes characterised by their material
A silver powder is provided. A value obtained by dividing, by D50, a difference of subtracting D10 from D90 is 1.0 or less, where D10, D50, and D90 are respectively a size in μm corresponding to a cumulative frequency of 10%, a size in μm corresponding to a cumulative frequency of 50%, and a size in μm corresponding to a cumulative frequency of 90% from a smaller particle size side in a volume-based particle size distribution in laser diffraction particle size distribution measurement. A value of Sa×D50 obtained by multiplying Sa by D50 is 17000 nm2 or more, where Sa is 10 arithmetic mean roughness in nm in surface roughness measurement for a 500 nm×500 nm area of silver particle surfaces.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 9/16 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes
8.
OPTICAL SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
Provided is an optical semiconductor element having improved efficiency. This optical semiconductor element comprises: a semiconductor laminate having at least one semiconductor laminated structure in which an active layer and a tunnel junction layer are laminated; and a first n-type electrode and a second n-type electrode sandwiching the semiconductor laminate. The tunnel junction layer comprises a p-type InAlAsSbP layer and an n-type InAlAsSbP layer lattice-matched to InAs, and has a light emission center wavelength of 2000-5000 nm.
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10F 30/20 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
H10H 20/811 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
9.
PRODUCTION METHOD FOR OPTICAL SEMICONDUCTOR ELEMENT
Provided is a production method for an optical semiconductor element with a high yield by preventing wafer damage caused by grinding. A production method for an optical semiconductor element comprises: a step of forming a laminate of compound semiconductor layers on one main surface of a compound semiconductor substrate having cleavability; and a grinding step of grinding the other main surface of the compound semiconductor substrate, wherein a skewness (Ssk) in surface roughness measurement of a ground surface of the compound semiconductor substrate immediately after the grinding step is positive.
Provided is a III-V compound semiconductor light-emitting element having good light emission output relative to injected power compared to conventional light-emitting elements. The III-V compound semiconductor light-emitting element includes an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in stated order and includes an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a layered structure in which a barrier layer and a well layer are repeatedly stacked. At a conduction band, a band gap of the electron blocking layer is larger than band gaps of the barrier layer and the p-type cladding layer, and the band gap of the p-type cladding layer is larger than the band gap of the barrier layer. At a valence band, a band gap of the electron blocking layer is between band gaps of the barrier layer and the cladding layer.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
11.
COMPOSITE-COATED SOFT MAGNETIC METAL POWDER AND METHOD FOR PRODUCING SAME
[Problem] To provide: a composite-coated soft magnetic metal powder having exceptional green compact insulation properties, without causing any decrease in magnetic permeability, by combining a silicon oxide coating layer and a coating layer of a silicon compound that contains an organic substance; and a method for producing the same. [Solution] A composite-coated soft magnetic metal powder having exceptional green compact insulation properties without decreasing magnetic permeability can be obtained by forming, on the surface of soft magnetic metal particles containing 20 mass% or more of iron, a composite coating provided with a silicon oxide coating layer having an average thickness of 0.1-20 nm as a first layer and a silicon-containing coating layer having a structure in which silicon to which a C8-20 linear alkyl group is bonded is siloxane bonded as a second layer.
B22F 1/16 - Metallic particles coated with a non-metal
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/102 - Metallic powder coated with organic material
B82Y 25/00 - Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
B82Y 40/00 - Manufacture or treatment of nanostructures
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
12.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc/(Dc+Dv) is 65% or more.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
13.
SILVER FLAKE POWDER AND PRODUCTION METHOD THEREOF, AND ELECTRICALLY CONDUCTIVE PASTE
To provide a flaky silver powder having a tapped density of from 0.8 g/mL to 1.9 g/mL, and a cumulative 50th percentile particle diameter (D50) of from 2 μm to 7 μm, where the cumulative 50th percentile particle diameter (D50) is measured by laser diffraction or laser scattering particle size analysis.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
14.
DOUBLE-STACK TYPE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING DOUBLE-STACK TYPE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a double-stack type semiconductor light-emitting element having good output characteristics and enabling improvement of reverse voltage characteristics (reduction of leakage current). A double-stack type semiconductor light-emitting element 100 comprises, in this order: a first n-type semiconductor layer 140; an undoped first active layer 144; a p-type pseudo tunnel junction layer 1471 having a p-type dopant; an n-type pseudo tunnel junction layer 1472 having an n-type dopant and provided in contact with the p-type pseudo tunnel junction layer 1471; an undoped second active layer 149; and a second p-type semiconductor layer 150. The maximum value of the impurity concentration of the n-type dopant included on the n-type pseudo tunnel junction layer 1472 side of the second active layer 149 is 1.0 × 1016atoms/cm3 or less.
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/811 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
15.
SPHERICAL SILVER POWDER, METHOD FOR PRODUCING SPHERICAL SILVER POWDER, AND ELECTRICALLY CONDUCTIVE PASTE
The purpose of the present invention is to provide a spherical silver powder that can impart exceptional low-temperature sinterability to an electrically conductive paste. The present invention is a spherical silver powder having, in an XRD analysis, a cubic Ag peak and a hexagonal Ag peak, the ratio of the intensity of the hexagonal Ag peak to the intensity of the cubic Ag peak being 0.5% or greater.
B22F 1/102 - Metallic powder coated with organic material
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B82Y 40/00 - Manufacture or treatment of nanostructures
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
16.
N-TYPE OHMIC ELECTRODE, METHOD FOR MANUFACTURING N-TYPE OHMIC ELECTRODE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
An n-type ohmic electrode 30 is provided on an n-type group III nitride semiconductor layer 10. The n-type ohmic electrode 30 has an Al layer 33 and a second direction-side Al-Ti region 34 located, relative to the Al layer 33, in a second direction opposite to a first direction which is toward the n-type group III nitride semiconductor layer 10. The second direction-side Al-Ti region 34 contains 50 at% or more of Al, 5-30 at% of Ti, and 10 at% or less of O.
The purpose of the present invention is to provide a spherical silver powder that can impart an excellent low-temperature sinterability to conductive pastes. A first embodiment of the present invention is a spherical silver powder that contains silver particles that have closed voids in the particle interior, wherein: when at least 10 fields of view of a silver particle cross section are observed at 100,000X, the number per the cross-sectional area of voids A having a Heywood diameter of at least 4 nm is at least 70/μm2and not more than 500/μm2, and the ratio, to the number of voids A per the cross-sectional area, of the number per the cross-sectional area of voids a having a Heywood diameter of at least 4 nm and less than 30 nm is at least 90%.
B22F 1/102 - Metallic powder coated with organic material
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
18.
FERRITE POWDER AND RESIN COMPOSITION CONTAINING SAME
5050 of 10 to 200 μm. The maximum height Rz on the particle surfaces of the ferrite powder is 1.5 μm or less, and the Heywood diameter of the crystal particle is in a range of 2.0 to 8.0 μm. For a 1-mm thick plate obtained by kneading and curing a resin and 60 vol% of the ferrite powder, the dielectric constant measured at 50 MHz is 1 to 20.
Provided is a semiconductor light-receiving element having high light reception sensitivity and high ESD withstand voltage. The semiconductor light-receiving element (100) includes an n-type InP substrate (110), an n-type InGaAs light-absorbing layer (130), and an InP window layer (140). A p-type impurity diffusion region (150) that reaches an upper part of the n-type InGaAs light-absorbing layer (130) is formed in the InP window layer (140). The n-type InGaAs light-absorbing layer (130) has a thickness of 2.2 μm or more and a carrier density due to an n-type impurity of 2.5×1015/cm3 or more.
H10F 77/124 - Active materials comprising only Group III-V materials, e.g. GaAs
H10F 30/22 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
A method of producing a silver powder includes: adding a reductant to a silver ammine complex aqueous solution to obtain a first liquid; adding a surface treatment agent, in an amount of 0.05 to 0.15 wt % relative to weight of silver contained in the silver ammine complex aqueous solution, to the first liquid to obtain a second liquid; obtaining a first silver powder from the second liquid and drying; and stirring the first powder, a lubricant, and media inside of a vessel to obtain a second silver powder. A specific surface area diameter is 1.3 to 2.0 μm. A diameter at a cumulative value of 50% in a volume-based particle size distribution is 1.5 to 3 times the specific surface area diameter. Additive amounts of the lubricant and the surface treatment agent are, in total, 0.1 to 0.4 wt % relative to weight of silver in the first silver powder.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
21.
SEMICONDUCTOR LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-RECEIVING ELEMENT
This semiconductor light-receiving element 1 is characterized in that: the element 1 includes a support substrate 200, a junction layer 50 on the support substrate 200, a semiconductor stack 10 having a light receiving part 33 above the junction layer 50, and an optical filter 80 positioned above the semiconductor stack 10 and transmitting a wavelength range including a light reception peak wavelength; a first conductivity type electrode 40 and a first conductivity type contact layer 31 located on the first conductivity type electrode 40 are provided in at least a part of the space between the junction layer 50 and the semiconductor stack 10; and the semiconductor stack 10 does not receive incident light from the junction layer 50 side.
H10F 30/223 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
[Problem] To provide a silver powder in which line resistance is reduced when the surface of silver powder is modified and the obtained silver powder is made into a past to be used for electrode formation, and a method for producing the same. [Solution] When metallic silver particles are deposited from an aqueous solution containing silver ions, by allowing a gallium compound to coexist in the aqueous solution, and by using a reducing agent which has an effect of lowering the pH of the aqueous solution upon addition or an oxidation product of which has an effect of lowering the pH of the aqueous solution, it is possible to obtain gallium oxide-deposited silver powder. When the deposited silver powder is made into a paste and used for electrode formation, the obtained electrode has low resistance.
B22F 1/16 - Metallic particles coated with a non-metal
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/20 - Conductive material dispersed in non-conductive organic material
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
23.
SPHERICAL SILVER POWDER, METHOD OF PRODUCING SPHERICAL SILVER POWDER, SPHERICAL SILVER POWDER PRODUCTION APPARATUS, AND CONDUCTIVE PASTE
Provided is a spherical silver powder that can bring about excellent fine line printability when used in a conductive paste or the like. The spherical silver powder has a diameter D10 at a volume-based cumulative value of 10%, a diameter D50 at a volume-based cumulative value of 50%, and a diameter D90 at a volume-based cumulative value of 90% according to laser diffraction that satisfy a formula: (D90−D10)/D50<1, and has a ratio D50/DBET of the D50 relative to a BET diameter DBET of not less than 0.90 and not more than 1.20.
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Provided is a spherical silver powder that can bring about excellent printability and low-temperature sintering ability when used in a conductive paste or the like. The spherical silver powder has a ratio D50/DBET of a diameter D50 at a volume-based cumulative value of 50% according to laser diffraction relative to a BET diameter DBET of not less than 0.9 and not more than 1.2 and includes voids in inner parts of particles.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
[Problem] To provide a Sm-Fe-N-based magnetic powder that has good heat resistance in an atmospheric environment (that is, good oxidation resistance when the temperature has been raised in the atmosphere) and that, when held in an atmospheric environment, is capable of maintaining good magnetic properties as compared to conventional, typical powders that are surface-treated by phosphate coating. [Solution] Provided is a fatty acid-coated Sm-Fe-N-based magnetic powder that is composed of particles having a structure in which one or more fatty acid molecules having 12-20 carbon atoms per molecule are adhered to the surface of Sm-Fe-N-based magnetic particles, wherein, when C content (mass%) in the powder is denoted as [% C], and a cumulative 50% particle diameter (μm) of the powder in a volume-based particle size distribution by a dry laser diffraction scattering method is denoted as [D50], an adhesion amount index Ci defined by formula (1) is 0.5-50.0 mass%･μm. (1): Ci = [% C] × [D50]
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/102 - Metallic powder coated with organic material
B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sinteringApparatus specially adapted therefor
C22C 33/02 - Making ferrous alloys by powder metallurgy
H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 1/08 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
26.
Method of producing silver powder, silver powder, and conductive paste
Provided is a method of producing a silver powder and the silver powder that enable preparation of a conductive paste capable of forming a wiring pattern with desired line width and height. A method of producing a silver powder comprises: a disintegration step of disintegrating an agglomerated silver powder in an airflow type mill, and a classification step of classifying a silver powder after the disintegration step, in a pneumatic classifier, wherein the agglomerated silver powder has a moisture content of 2 wt % or more and 20 wt % or less, in the disintegration step, compressed air at a temperature of 80° C. or more and 180° C. or less is supplied to the airflow type mill as supply air, in the classification step, an exhaust of the airflow type mill and the silver powder after the disintegration step are supplied to the pneumatic classifier.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 9/16 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes
27.
MIXED SILVER POWDER, METHOD FOR PRODUCING SAME, AND METAL PASTE FOR BONDING
M1M2M1M2M2M1M1 ≤ 16.0 μm. The relationship between the volume distribution proportion A of whichever of the first peak and the second peak has the lower volume distribution proportion and the volume distribution proportion B, which is the minimum volume distribution proportion occurring between the first peak and the second peak, satisfies formula (III): 1.2 ≤ A / B or formula (IV): 0 = B / A.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
Disclosed is a silicon oxide-coated soft magnetic powder which is obtained by coating the surface of each core particle with silicon oxide, the core particle being formed of a soft magnetic metal that contains 20 mass% or more of iron. If Vs (V) is the dielectric breakdown voltage of the silicon oxide-coated soft magnetic powder, Vc (V) is the dielectric breakdown voltage of only the core particles, and Ts (nm) is the average film thickness of the silicon oxide, the increase rate A (%/nm) of the dielectric breakdown voltage per unit film thickness of the silicon oxide as defined by formula (1) is 55 or more. (1): A = ((Vs/Vc) - 1) × 100/Ts
H01F 1/24 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/16 - Metallic particles coated with a non-metal
H01F 1/33 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials mixtures of metallic and non-metallic particlesMagnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metallic particles having oxide skin
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
29.
POLYMER-COATED MAGNETIC METAL PARTICLE AND METHOD FOR PRODUCING SAME
Polymer-coated magnetic metal particles according to the present invention each comprise: a magnetic metal particle; a coating layer that is provided on the surface of the magnetic metal particle and that is formed of silicon oxide; and a polymer layer that is provided on the surface of the coating layer and that contains a polymer formed of a structural unit represented by formula (1) and an alkoxysilane having an acrylic group or a methacrylic group.
A deep ultraviolet light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type electron blocking layer, and a p-type contact layer, in order, on a substrate. The p-type contact layer has a superlattice structure in which a first layer formed of AlxGa1-xN and a second layer formed of AlyGa1-yN are stacked alternately. The Al composition ratio y of the second layer is 0.15 or higher. The deep ultraviolet light-emitting element includes a reflective electrode consisting of Ni and Rh directly on an outermost second layer. A guide layer having an Al composition ratio larger than those of a barrier layer of the light-emitting layer and the p-type electron blocking layer is included between the p-type electron blocking layer and a well layer closest to the p-type electron blocking layer in the light-emitting layer. A volume ratio of Rh in the reflective electrode is 75% or higher.
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
L/(2×major axis+2×minor axis) (Formula 1):
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
L/(2×major axis+2×minor axis) (Formula 1):
where L is the perimeter (μm) of the one silver particle, and the major axis and minor axis are respectively a long side (μm) and short side (μm) of the rectangle of minimum area circumscribing an outline of cross-section of the one silver particle.
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
A perovskite-type composite oxide powder according to the present invention includes: La; and at least one type of element selected from the group consisting of Sr, Ca, Co, Ni, Mn and Fe, a BET specific surface area is less than 6.0 m2/g and a formula (1) below is satisfied:
A perovskite-type composite oxide powder according to the present invention includes: La; and at least one type of element selected from the group consisting of Sr, Ca, Co, Ni, Mn and Fe, a BET specific surface area is less than 6.0 m2/g and a formula (1) below is satisfied:
1
≤
{
(
D
9
0
B
-
D
1
0
B
)
/
D
5
0
B
}
/
{
(
D
9
0
A
-
D
1
0
A
)
/
D
5
0
A
}
≤
2
.
1
(
1
)
in the formula, D10 is a cumulative 10% particle size by volume, D50 is a cumulative 50% particle size by volume and D90 is a cumulative 90% particle size by volume when a measurement was performed with a particle size distribution measuring device that uses a laser diffraction/scattering method, and a subscript “A” indicates a particle size after ultrasonic dispersion and a subscript “B” indicates a particle size before ultrasonic dispersion.
The purpose of the present invention is to provide a spherical silver powder that can impart an excellent thin line printability to conductive pastes. The present invention is a spherical silver powder in which a surface treatment agent is present; for which, in measurement of the thermal expansion coefficient, the maximum value of the thermal expansion coefficient with reference to the value at 50°C is 0.3% or less; for which the BET specific surface area is at least 0.1 m2/g and not more than 0.8 m29090 is at least 2.0 μm and not more than 4.0 μm.
B22F 1/102 - Metallic powder coated with organic material
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
34.
EPITAXIAL GROWTH SUBSTRATE, METHOD FOR PRODUCING OPTICAL SEMICONDUCTOR ELEMENT, AND OPTICAL SEMICONDUCTOR ELEMENT
gpp･gp･g of the pseudo substrate layer with respect to the initial growth substrate is not less than 0.7%; N is a natural number of not less than three; and there are not fewer than three buffer layers having a misfit dislocation on the initial-growth-substrate side of the buffer layer.
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
35.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a semiconductor light-emitting element that has a high reverse voltage (Vr) while a dry etching scheme is used as a mesa formation scheme for a support substrate-bonded type semiconductor light-emitting element. The semiconductor light-emitting element is provided with, on a support substrate in the following order: a reflection layer; an intermediate electrode layer; a first conductivity type layer; an active layer; and a second conductivity type layer. The semiconductor light-emitting element is characterized in that: the intermediate electrode layer comprises a dielectric section and a conductor section, the outer peripheral section of the intermediate electrode layer constituting the dielectric section; the dielectric section is present on the outside of side surfaces extending from the first conductivity type layer to the second conductivity type layer; the angle between the dielectric section and the side surface of the first conductivity type layer is 70 to 85°; and no notches are present on the side surface of a semiconductor laminate.
The purpose of the present invention is to provide a silver powder and a production method for the silver powder that make it possible to prepare a conductive paste that makes it possible to obtain a wiring pattern that has a comparatively large ratio (aspect ratio) of height to line width. This silver powder includes pores enclosed in silver particles. The value of Sa/BET diameter, which is found by dividing the arithmetic average roughness Sa (nm) of the surface of the silver particles by the BET diameter found by using the values of the specific surface area (m2/g) and the true density as measured by the single-point BET method to calculate 6/(specific surface area×true density), is at least 0.0070. This production method for a silver powder includes a crushing step for crushing an agglomerated silver powder with an airflow-type pulverizer and a classification step for classifying the silver powder that has undergone the crushing step with a pneumatic classifier. The agglomerated silver powder has a water content of 5.0–30.0 wt%. At the crushing step, compressed air that is at a temperature of 80°C–180°C is supplied to the airflow-type pulverizer as supplied air. At the classification step, exhaust air from the airflow-type pulverizer and the silver powder that has undergone the crushing step are supplied to the pneumatic classifier, the exhaust air being at a temperature of at least 30°C and having a volume absolute humidity of at least 20 g/m3.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
37.
SILVER POWDER, METHOD FOR PRODUCING SILVER POWDER, DEVICE FOR PRODUCING SILVER POWDER, AND RESIN-CURABLE CONDUCTIVE PASTE
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
38.
SILVER POWDER AND RESIN-CURABLE ELECTROCONDUCTIVE PASTE
The purpose of the present invention is to provide a silver powder that, when formed into an electroconductive paste, is capable of demonstrating low volume resistivity even if calcinated at a low temperature. The present invention is a silver powder which contains a surface treatment agent, and in which the ratio of the amount of oxygen to the BET surface area is at least 0.11 and the crystal grain size is 30 nm to 38 nm.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 1/102 - Metallic powder coated with organic material
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
39.
SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT RECEIVING ELEMENT
The present invention provides: a semiconductor light receiving element which has a high breakdown voltage, while achieving adequate capacitance and dark current values at the same time; and a method for manufacturing a semiconductor light receiving element. A semiconductor light receiving element according to the present invention has an n-type InP substrate, a buffer layer on the n-type InP substrate, an n-type InGaAs light absorption layer on the buffer layer, and an InP window layer on the n-type InGaAs light absorption layer, and a p-type impurity diffusion region that reaches the upper part of the n-type InGaAs light absorption layer is formed in the InP window layer. This semiconductor light receiving element is characterized in that the n-type InGaAs light absorption layer has an average n-type impurity concentration of 2.5 × 1014/cm3to 1.0 × 1015/cm3 inclusive.
H10F 30/20 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
40.
LIGHT-EMITTING ELEMENT AND METHOD OF PRODUCING LIGHT-EMITTING ELEMENT
Provided is a light-emitting element having excellent close adherence between a protective film and a semiconductor layer. The light-emitting element is a flip chip-type light-emitting element including a buffer layer formed on a main surface of a substrate, an n-type AlGaN layer formed on the buffer layer, and a light-emitting layer and a p-type AlGaN layer formed in order on at least part of the n-type AlGaN layer. An exposed surface of the substrate is present at an end section on the main surface of the substrate. In a cross-section of the light-emitting element, the exposed surface is inclined at an acute angle θs of 45° or less relative to a horizontal line of an interface between the substrate and the buffer layer.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
41.
SILVER POWDER, MIXED SILVER POWDER, AND CONDUCTIVE PASTE, AND METHOD FOR MANUFACTURING SILVER POWDER AND MIXED SILVER POWDER
Obtained are a silver powder and a mixed powder that can achieve low-resistance electrode wiring when printing wires, and a conductive paste using these powders. The silver powder includes, as 20% or more and less than 95% of all particles, silver particles whose main region of the silver particle upper surface is the (111) plane or a plane close to the (111) plane. The KAM value of the silver particles is 0.4 or more and 1.0 or less.
B22F 9/18 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
42.
OPTICAL SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
This invention improves the characteristics of an optical semiconductor element. An optical semiconductor element according to the present invention comprises: a first active layer having a light-reception/emission wavelength of a first wavelength; a tunnel junction layer on the first active layer; and a second active layer on the tunnel junction layer, the second active layer having a light-reception/emission wavelength of a second wavelength. The first active layer and the second active layer include Sb. The tunnel junction layer has a p-type InAs layer and an n-type InAs layer.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
43.
COPPER-CONTAINING SILVER POWDER, CONDUCTIVE PASTE, CONDUCTIVE FILM, AND SOLAR BATTERY CELL
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of a conductive film. The present invention pertains to a copper-containing silver powder. In a differential curve of a TMA curve from 100°C to 600°C obtained by thermomechanical analysis in which the temperature of the copper-containing silver powder is raised at a temperature increase rate of 10°C/min, the copper-containing silver powder has an expansion peak and has, on the lower temperature side from the expansion peak, a first shrinkage peak at which the dTMA is -0.10%/min or less.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
The present invention improves the characteristics of an AlN template substrate. An AlN template substrate according to the present invention is characterized in that: the AlN template substrate has an AlN layer formed on a main surface of a sapphire substrate; the main surface of the sapphire substrate has a C-plane inclined at an off angle of 0.02°-0.35°; and a step linear rate is at least 90%, the step linear rate being obtained by dividing the linear distance connecting a first contact point which is between a ridge line of a step in an AFM image of a surface of the AlN layer and an edge of the AFM image, and a second contact point by the length of the ridge line of the step extending from the first contact point to the second contact point.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
45.
Silver powder, method of producing silver powder, and conductive paste
Provided are a silver powder that can reduce line resistance and a method of producing the same. The silver powder has a diameter at a cumulative value of 50% of 3 μm or more and a ratio of particles of 10 μm or larger of 10% or less. The silver powder includes flake-like particles having a major axis of 6 μm or more and irregularly shaped particles having a major axis of less than 6 μm, an average aspect ratio that is a ratio of average major axis relative to average thickness of the flake-like particles is 8 or more, and a shape factor that is a ratio of area of a circle having average maximum length of the irregularly shaped particles as a diameter relative to average particle area of the irregularly shaped particles is 1.7 to 1.9. Ignition loss is 0.1 wt % to 0.4 wt %.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
46.
COPPER-CONTAINING SILVER POWDER, METHOD FOR PRODUCING SAME, ELECTROCONDUCTIVE PASTE, ELECTROCONDUCTIVE FILM, AND SOLAR BATTERY CELL
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of an electroconductive film. The present invention is a copper-containing silver powder having a true density of less than 10 g/cm3 and a copper content of 10 to 10,000 ppm.
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Provided are an ultraviolet light-emitting element that enables high light emission output and a method of producing the same. The light-emitting element (100) includes, in stated order: an n-type semiconductor layer (3) formed of AlxGa1-xN having an Al composition ratio x; a quantum well-type light-emitting layer (4); a p-type electron blocking layer (6) formed of AlyGa1-yN having an Al composition ratio y; a p-type cladding layer (7) formed of AlzGa1-zN having an Al composition ratio z; and a p-type GaN contact layer (8). The p-type electron blocking layer (6) has an Al composition ratio y of 0.35 to 0.45 and a thickness of 11 nm to 70 nm. The total thickness of the p-type electron blocking layer (6) and p-type cladding layer (7) is 73 nm to 100 nm. The thickness of the p-type GaN contact layer (8) is 5 nm to 15 nm.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
48.
METHOD OF MANUFACTURING SILICON-OXIDE-COATED SOFT MAGNETIC POWDER
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Means for Solution] A highly insulating silicon oxide-coated soft magnetic powder, in which the ratio of a volume-based cumulative 50% particle diameter D50 (HE) according to a dry laser diffraction particle size distribution analysis to the same particle diameter D50 (MT) according to a wet laser diffraction particle size distribution analysis is 0.7 or more, and a coverage ratio R defined by R=Si×100/(Si+M) (wherein Si and M are molar fractions of Si and elements constituting the soft magnetic powder) is 70% or more is obtained by subjecting a slurry containing a soft magnetic powder containing 20 mass % or more of iron and a hydrolysate of a silicon alkoxide to a dispersion treatment when the surface of the soft magnetic powder is coated with the hydrolysate in a mixed solvent of water and an organic substance.
Provided are a silver powder that when used as a conductive paste, has low tendency to experience disconnection even with reduced line width and has lower volume resistivity than is conventionally the case, a conductive paste containing such a silver powder as a conductive filler, and a method of producing such a silver powder. The silver powder is a collection of silver particles that has an apparent density of not less than 8.2 g/cm3 and not more than 9.2 g/cm3 and a value of not less than 1.1 and not more than 1.4 for a ratio of length of a perimeter in a particle cross-section for the silver particles and length of a line circumscribing a periphery of the particle cross-section.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
Provided is a mixed silver powder capable of reducing the specific resistance of a conductive film. This mixed silver powder comprises first silver particles, second silver particles, and third silver particles that are graded by the long-side length, wherein: the average value of the aspect ratio of the first silver particles is at least 2; the average value of the aspect ratio of the second silver particles is at least 1.5 and less than 2; the average value of the aspect ratio of the third silver particles is less than 1.5; within the mixed silver powder, the proportion by the particle count of the first silver particles is at least 0.5% and no more than 5%, the proportion by the particle count of the second silver particles is at least 10%, and the proportion by the particle count of the third silver particles is at least 15%; the average value of the ratio α, calculated using the formula (1) ratio α = perimeter length of second silver particle / (long-side length of second silver particle × 2 + short-side length of second silver particle × 2), is at least 0.84; and a polyvalent carboxylic acid adheres to the surface of at least one type of silver particles chosen from the group consisting of the first silver particles, the second silver particles, and the third silver particles.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/102 - Metallic powder coated with organic material
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
51.
GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT
Provided is a GaAs wafer having suppressed carrier concentration and low dislocation density, as well as a large proportion of the area of a region with zero dislocation density to the GaAs wafer surface. The GaAs wafer has a silicon concentration of 1.0×1017 cm−3 or more and less than 1.1×1018 cm−3; an indium concentration of 3.0×1018 cm−3 or more and less than 3.0×1019 cm−3; a boron concentration of 2.5×1018 cm−3 or more; a carrier concentration of 1.0×1016 cm−3 or more and 4.0×1017 cm−3 or less; and a proportion of the area of a region with zero dislocation density to the wafer surface of 91.0% or more.
C30B 11/04 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
52.
SILVER POWDER, MIXED SILVER POWDER AND CONDUCTIVE PASTE, AND METHOD FOR PRODUCING SILVER POWDER AND MIXED SILVER POWDER
The present invention provides: a silver powder and a mixed powder, which are each capable of reducing the resistance of an electrode wiring line when the wiring line is printed; and a conductive paste which uses the same. This silver powder contains, with respect to all particles, not less than 20% but less than 95% of silver particles, in each of which the main region of the upper surface of the silver particle is the (111) plane or a plane close to the (111) plane, the silver particles having a KAM value of 0.4 to 1.0 inclusive.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
53.
SILVER POWDER AND METHOD OF PRODUCING SILVER POWDER
Provided are a silver powder that is suitable as a conductive filler for a conductive paste that enables low-temperature firing and a method of producing this silver powder. The method of producing a silver powder includes an azole addition step of adding an azole to a silver ammine complex aqueous solution to obtain a first liquid, a reductant addition step of adding a reductant to the first liquid to obtain a second liquid, and a fatty acid addition step of adding a fatty acid to the second liquid to obtain a third liquid. The fatty acid is an unsaturated fatty acid including two or more double bonds.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/102 - Metallic powder coated with organic material
A perovskite-type composite oxide powder according to the present invention contains La, further contains at least one element selected from the group consisting of Sr, Ca, Co, Ni, Mn, and Fe, has a BET specific surface area less than 6.0 m290B10B50B90A10A50A10509090 respectively represent the volume-based cumulative 10% particle size, cumulative 50% particle size, and cumulative 90% particle size as measured by a particle size distribution measuring device by using a laser diffraction scattering method, and having the suffix "A" indicates a particle size obtained after ultrasonic dispersion and having the suffix "B" indicates particle size before ultrasonic dispersion.
The present invention detects an etch pit with high accuracy. A wafer inspection device (10) is provided with: a data input interface (11) for acquiring parameters used for detecting an etch pit; an image input interface (13) for acquiring a captured image of the surface of a wafer; and a control unit (14) for analyzing the captured image on the basis of the parameters and detecting an etch pit appearing on the surface of the wafer. The captured image is taken by means of an illumination device for supplying light to the wafer and an imaging device for capturing an image of the wafer. The captured image is an image captured such that the long axis of the etch pit is inclined by 30° or more from a line perpendicular to a line connecting the illumination device and the imaging device. The parameters include a luminance threshold value and a range of the inclination angle of the etch pit. The control unit (14) detects, as an etch pit, an isolated point at which the angle with respect to an image reference axis is within the range of the inclination angle.
Provided are a gallium-containing silver powder, and a production method thereof. The gallium-containing silver powder can supply gallium as a p-type impurity in a suitable form, can exhibit low resistance through low-temperature sintering and can exhibit lower electrical resistance compared to a case in which aluminum is added, through high-temperature sintering. The gallium-containing silver powder according to the present invention has a median diameter D50 of 0.2 μm to 5.0 μm in terms of the volume of gallium-containing silver powder as measured by laser diffraction.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
57.
GALLIUM POWDER, MIXED POWDER, METHOD FOR PRODUCING GALLIUM POWDER DISPERSION, METHOD FOR PRODUCING GALLIUM POWDER, GALLIUM POWDER DISPERSION, AND CONDUCTIVE PASTE
Gallium powder of a small particle size is obtained, and a mixed powder containing said gallium powder that enables making a conductive paste that yields a low-resistance electrode is provided. The gallium powder according to the present invention has an SEM average diameter of from 0.2 μm to 2 μm and a surfactant selected from fatty acids, azole compounds, alkenylsuccinic acids, aliphatic amines, or salts thereof or anhydrides thereof is adhered to the surface of the powder.
50 obtained by a laser diffraction particle size distribution analysis of 1.5 μm or less to a slurry of a silver powder. The surface of the silver powder is coated with the surface treatment agent. The surface of the silver powder is further coated with a polyvalent carboxylic acid in a step of producing the silver powder.
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
C09C 3/08 - Treatment with low-molecular-weight organic compounds
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
59.
PEROVSKITE-TYPE COMPOSITE OXIDE POWDER AND AIR ELECTRODE FOR SOLID OXIDE FUEL CELL AND SOLID OXIDE FUEL CELL USING THE SAME
In a perovskite-type composite oxide powder according to the present invention, the geometric standard deviation value of the maximum Feret diameter of the perovskite-type composite oxide powder calculated by performing image analysis on an SEM image acquired with a scanning electron microscope is equal to or greater than 1.01 and less than 1.60, and when it is assumed that the perovskite-type composite oxide powder is spherical, the ratio (B/A) of an area value B directly calculated by the image analysis to an area value A calculated from the maximum Feret diameter is equal to or greater than 0.7 and less than 1.0. In this way, the perovskite-type composite oxide powder is used as the air electrode material of an SOFC, and thus high conductivity as compared with a conventional air electrode material is obtained.
H01M 12/06 - Hybrid cellsManufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type with one metallic and one gaseous electrode
60.
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT
xyzzAs (where 0.49 ≤ x ≤ 0.55, 0.10 ≤ z < 0.35 and x + y + z = 1), and the developed interfacial area ratio (Sdr) of a light extraction surface of the cladding layer having the second conductivity type is 4.0 or more.
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
61.
Powder including niobium complex and lithium and production method thereof, and production method of lithium secondary battery positive electrode active material having coated layer containing lithium niobate
A powder contains a niobium complex and lithium, an amount of niobium being 25 mass % or more and 75 mass % or less, a proportion of niobium in metal elements of the powder is 0.775 or more and 0.950 or less in terms of mass ratio. When the powder is dissolved in 8 times its mass of water at 25° C., a niobium content contained in a filtrate thereof is 80 mass % or more of an amount of niobium contained in the powder before dissolution. The powder is obtained by mixing a niobium compound, a lithium compound, an alkali, hydrogen peroxide, and water to obtain an aqueous solution containing a niobium complex and lithium and then drying the solution at a temperature equal to or lower than a decomposition temperature of the niobium complex. The powder is suitable for preparing a lithium niobate precursor solution for coating positive electrode active material particles.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
63.
Light-emitting element and method of manufacturing the same
A light-emitting element having high emission output power and light emission efficiency and a method of manufacturing of the same are provided. A light-emitting element according to the present disclosure includes an n-type semiconductor layer; an InAsSbP active layer containing at least In and As on the n-type semiconductor layer; a p-type semiconductor layer that is lattice-matched with the InAsSbP active layer, on the InAsSbP active layer; and a p-type InGaAs window layer that is lattice-mismatched with the p-type semiconductor layer, on the p-type semiconductor layer, wherein the p-type semiconductor layer has a thickness of 20 nm or more and 520 nm or less.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
64.
CARRIER CORE MATERIAL AND ELECTROPHOTOGRAPHIC DEVELOPMENT CARRIER USING SAME AND ELECTROPHOTOGRAPHIC DEVELOPER
A carrier core material includes ferrite particles, contains CaSiO3, and has a true density at least equal to 3.5 g/cm3 and at most equal to 4.5 g/cm3. A particle strength index calculated from formula (1) is preferably at most equal to 1.5% by volume. (1): Particle strength index=V2−V1 (In the formula, V1: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material before crushing test, and V2: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material after crushing test) Crushing test conditions: 30 g of carrier core material crushed using a sample mill for 60 seconds at a rotational speed of 14000 rpm.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
66.
METHOD OF PRODUCING GAAS WAFER, AND GAAS WAFER GROUP
A method of producing a GaAs wafer having excellent OF orientation stability even in a GaAs wafer having an off angle, and a GaAs wafer group are provided. A method of producing a GaAs wafer includes: a grinding step of grinding a peripheral surface of a GaAs ingot including formation of a provisional orientation flat; a slicing step of slicing the GaAs ingot after the grinding step to cut out a material wafer having an off angle; and a cleaving step of applying marking to the material wafer according to an orientation of an orientation flat determined based on the provisional orientation flat and cleaving the material wafer toward a peripheral surface of the material wafer from the marking to form the orientation flat.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Provided are a silver powder and a method of producing the same. The method of producing the silver powder includes a first surface smoothing step of causing fine silver particles having internal voids to mechanically collide with one another; a fine powder removal step of dispersing fine silver particles present after the first surface smoothing step using high-pressure airflow while removing fine powder; and a second surface smoothing step of causing fine silver particles present after the fine powder removal step to mechanically collide with one another.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
H01B 1/20 - Conductive material dispersed in non-conductive organic material
68.
ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SAME
The present invention provides: an ultraviolet light emitting element which achieves a high light emission output; and a method for producing this ultraviolet light emitting element. This ultraviolet light emitting element is provided with: a transparent substrate which has a main surface that serves as a light extraction surface; an AlN layer which is positioned on the transparent substrate; an n-type semiconductor layer which is positioned on the AlN layer; a quantum well light emitting layer which is positioned on the n-type semiconductor layer; a p-type semiconductor layer which is positioned directly on the quantum well light emitting layer; and a reflective electrode which is positioned directly on the p-type semiconductor layer. The lateral surface of the transparent substrate is roughened; the thickness L (nm) of the p-type semiconductor layer, the luminescence center wavelength λ (nm) by the quantum well light emitting layer, the refractive index n of the p-type semiconductor layer, a natural number k, and the emission angle θ of light heading toward the inside of the p-type semiconductor layer from the quantum well light emitting layer satisfy 2L/cosθ = λ(2k + 1)/2n; and in cases where the main surface and the lateral surface of the transparent substrate are flat, the emission angle θ is within the range where light is not extracted from the transparent substrate to the air.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Provided is a production method for an optical semiconductor element having a good yield rate due to damage to a wafer by grinding being inhibited. Specifically provided is a production method for an optical semiconductor element, the production method having a step for forming a compound semiconductor layer laminate on one main surface of a compound semiconductor substrate having cleavability and a grinding step for grinding the other main surface of the substrate, wherein the skewness (Ssk) of the ground surface of the substrate in a surface roughness measurement is set to be positive immediately after the grinding step.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
71.
III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a III-V compound semiconductor light-emitting element that has better light emission output with respect to injected power, as compared to conventional light-emitting elements. A III-V compound semiconductor light-emitting element according to the present invention has an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in this order and has an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a laminated structure formed by repeatedly stacking barrier layers and well layers. In a conduction band, a band gap of the electron blocking layer is larger than a band gap of the barrier layer and a band gap of the p-type cladding layer, and a band gap of the p-type cladding layer is larger than a band gap of the barrier layer. In a valence band, the band gap of the electron blocking layer lies between the band gap of the barrier layer and the band gap of the cladding layer.
Provided is a semiconductor light-emitting device for which detrimental effects such as discoloration of an electrode or emission failure due to migration are suppressed even when a joint material containing Ag is used, and a method of producing the same. The semiconductor light-emitting device includes a p-type semiconductor layer, a p-type electrode provided on the p-type semiconductor layer, and a pad provided on the p-type electrode. The p-type electrode at least has an ohmic metal layer placed on the p-type semiconductor layer side and a barrier layer that is placed closer to the pad than the ohmic metal layer and includes a TiN layer. In a top view, when a region of the barrier layer that does not overlap an electrical connection region between the pad and the barrier layer is defined as a surface diffusion inhibiting surface, the surface diffusion inhibiting surface is formed in a circular pattern.
Provided is a semiconductor light-emitting element having better light-emitting characteristics than conventional light-emitting elements. A semiconductor light-emitting element according to the present invention comprises a light-emitting layer having a laminate obtained by repeatedly laminating a first group III-V compound semiconductor layer and a second group III-V compound semiconductor layer, wherein: the group III element in the first and second group III-V compound semiconductor layers is one or more selected from the group consisting of Al, Ga, and In; the group V element in the first and second group III-V compound semiconductor layers is one or more selected from the group consisting of As, Sb, and P; the composition wavelength difference between the composition wavelength of the first group III-V compound semiconductor layer and the composition wavelength of the second group III-V compound semiconductor layer is at least 70 nm; and, in a band structure of the laminate, the well depth (Dc) on a conduction band side is greater than the well depth (Dv) on a valence band side, and Dc/(Dc+Dv) is at least 65%.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
74.
SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND MANUFACTURING METHOD THEREFOR
Provided is a semiconductor light receiving element having high light receiving sensitivity and a high ESD withstand voltage. The semiconductor light receiving element 100 comprises an n-type InP substrate 110, an n-type InGaAs light absorbing layer 130, and an InP window layer 140, and has a p-type impurity diffusion region 150 formed within the InP window layer 140 to reach the upper part of the n-type InGaAs light absorbing layer 130, wherein the n-type InGaAs light absorbing layer 130 has a thickness of 2.2 µm or more and a carrier density due to n-type impurities of 2.5×1015/cm3 or more.
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
75.
Silver powder, production method thereof, and conductive paste
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H10D 62/854 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
77.
METHOD FOR PRODUCING SILVER POWDER, SILVER POWDER AND CONDUCTIVE PASTE
The present invention provides: a method for producing a silver powder that enables the preparation of a conductive paste which is capable of forming a wiring pattern that has desired line width and height; and this silver powder. A method for producing a silver powder according to the present invention comprises: a crushing step in which an agglomerated silver powder is crushed by means of an air flow type pulverizer 2; and a classification step in which the silver powder after the crushing step is classified by means of a pneumatic classifier 3. With respect to this method for producing a silver powder, the agglomerated silver powder has a moisture content of 2 wt% to 20 wt%; a compressed air at a temperature of 80°C to 180°C is supplied, as a supply air, to the air flow type pulverizer 2 in the crushing step; the exhaust of the air flow type pulverizer 2 and the silver powder after the crushing step are supplied to the pneumatic classifier 3 in the classification step; and the exhaust has a temperature of 30°C or more and a volumetric humidity of 20 g/m3 or more.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
78.
MAGNETIC POWDER FOR MAGNETIC RECORDING MEDIUM, AND PRODUCTION METHOD THEREOF
A magnetic powder for a magnetic recording medium includes magnetic particles in which Ba in hexagonal barium ferrite is partially substituted with Sr, wherein a Dx volume represented by Dx volume (nm3) = Dxc × π × (Dxa/2)2 is 2,200 nm3 or less, and an Sr/(Ba+Sr) molar ratio is 0.01 to 0.15. One that satisfies Ku ≥ 0.1 × [Sr/(Ba+Sr) molar ratio] + 0.13 is more preferred. For the formulas, Dxc is a crystallite diameter (nm) in a c-axis direction of a hexagonal ferrite crystal lattice, Dxa is a crystallite diameter (nm) in an a-axis direction of the same crystal lattice, π is a circular constant, and Ku is a magnetocrystalline anisotropy constant (MJ/m3). By providing the hexagonal ferrite magnetic powder formed of fine particles, an effect of improving the perpendicular squareness ratio SQ of a magnetic recording medium is large.
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
79.
SPHERICAL SILVER POWDER, PRODUCTION METHOD FOR SPHERICAL SILVER POWDER, SPHERICAL SILVER POWDER PRODUCTION DEVICE, AND ELECTRICALLY CONDUCTIVE PASTE
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
80.
SPHERICAL SILVER POWDER, METHOD FOR PRODUCING SPHERICAL SILVER POWDER, APPARATUS FOR PRODUCING SPHERICAL SILVER POWDER, AND CONDUCTIVE PASTE
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
There is provided a bonding paste capable of forming a uniform bonding layer by reducing occurrence of voids at edges even when a bonding area is large, and bonding method using the paste, and provides a metal paste for bonding containing at least metal nanoparticles (A) having a number average primary particle size of 10 to 100 nm, wherein a cumulative weight loss value (L100) when a temperature is raised from 40° C. to 100° C. is 75 or less, and a cumulative weight loss value (L150) when a temperature is raised from 40° C. to 150° C. is 90 or more, and a cumulative weight loss value (L200) when a temperature is raised from 40° C. to 200° C. is 98 or more, based on 100 cumulative weight loss value (L700) when the paste is heated from 40° C. to 700° C. at a heating rate of 3° C./min in a nitrogen atmosphere.
[Problem] A hexagonal barium ferrite magnetic powder formed of fine particles, wherein the anisotropic magnetic field distribution of a magnetic recording medium can be made to fall within a range effective in both improving the recording density and improving the SNR is provided.
2 (1)
Here, Dxc is a crystallite diameter (nm) in a c-axis direction of a hexagonal ferrite crystal lattice, Dxa is a crystallite diameter (nm) in an a-axis direction of the same crystal lattice, and π is a circular constant.
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
H01F 1/11 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
83.
BLOCK-LIKE SILVER POWDER AND MANUFACTURING METHOD THEREOF, AND ELECTRICALLY CONDUCTIVE PASTE
Provided is a block-like silver powder having a BET specific surface area of 0.5 m2/g or less, an average aspect ratio when 100 or more silver particle cross sections are observed of 1.2 or greater and less than 2.0, and an average ratio of a peripheral length of a silver particle to a peripheral length of a circumscribing rectangular shape expressed by (Formula 1) of 0.84 or greater. (Formula 1): L/(2 x major diameter + 2 x minor diameter), where L is the peripheral length of the silver particle, and major diameter and minor diameter are the major diameter (μm) and the minor diameter (μm) of a rectangular shape having the smallest area of rectangular shapes circumscribing a contour of a silver particle cross section.
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
85.
GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER
Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×1017 cm−3 or more and less than 1.5×1018 cm−3, an indium concentration of 1.0×1017cm−3 or more and less than 6.5×1018 cm−3, a carrier concentration of 5.5×1017 cm−3 or less, and an average dislocation density of 500/cm2 or less.
A perovskite-type composite oxide powder is a perovskite-type composite oxide powder represented by a general formula ABO3-δ (where δ represents an amount of deficiency of oxygen and 0≤δ<1), an element contained in an A site is La, elements contained in a B site are Co and Ni and a crystallite size determined by a Williamson-Hall method is equal to or greater than 20 nm and equal to or less than 100 nm. In this way, when the perovskite-type composite oxide powder is used as an air electrode material for a fuel cell, an air electrode in which the resistance thereof is low and the conductivity thereof is high can be obtained.
H01M 8/1246 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte the electrolyte consisting of oxides
A dispersed iron oxide magnetic powder slurry, in which the average secondary particle diameter of ε-type iron oxide measured with a dynamic light scattering particle size distribution analyzer is 65 nm or less, and which has good dispersibility, is obtained by adding a quaternary ammonium salt serving as a first dispersant and an alkali to a slurry containing ε-type iron oxide particles to bring the pH at 25° C. to 11 or higher, and thereafter adding an organic compound, which is an organic acid serving as a second dispersant and having two or more carboxy groups in the molecule, and in which one type or two types of a hydroxy group and an amino group are bound to carbon that does not constitute a carboxy group other than the carboxy groups to bring the pH at 25° C. of the slurry to 4 or higher and lower than 11.
G11B 5/714 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the dimension of the magnetic particles
H01F 1/11 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
89.
SILVER POWDER, PRODUCTION METHOD FOR SILVER POWDER, AND CONDUCTIVE PASTE
Provided are a silver powder that can reduce line resistance and a production method for the silver powder. The present invention provides a silver powder that, with respect to a volume-based particle size distribution measured by a laser diffraction/scattering particle size distribution measurement device, has a cumulative 50% diameter of at least 3 μm and is no more than 10% particles that are 10 μm or larger. With respect to the particle shapes observed by image analysis based on an SEM image, the silver powder includes flaky particles that have a length of at least 6 μm and amorphous particles that have a length of less than 6 μm, the average aspect ratio that is the ratio between the average length and the average thickness of the flaky particles being at least 8, and the shape factor that is the ratio between the area of a circle that has a diameter that is the average maximum length of the amorphous particles and the average particle area of the amorphous particles being 1.7–1.9. The silver powder has an ignition loss value of 0.1–0.4 wt%.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
90.
ULTRAVIOLET LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR
x1–xy1–yz1–z1–zN with an Al compositional ratio z; and a p-type GaN contact layer 8. The p-type electron blocking layer 6 has an Al compositional ratio y of 0.35 to 0.45 and a thickness of 11 nm to 70 nm. The total thickness of the p-type electron blocking layer 6 and the p-type cladding layer 7 is 73 nm to 100 nm. The thickness of the p-type GaN contact layer 8 is 5 nm to 15 nm.
A silver powder containing: silver particles; and an adherent that is attached to surfaces of the silver particles and contains a metal oxide that has a melting point lower than a melting point of silver.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
C03C 4/14 - Compositions for glass with special properties for electro-conductive glass
B22F 1/08 - Metallic powder characterised by particles having an amorphous microstructure
B22F 1/16 - Metallic particles coated with a non-metal
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
C03C 8/16 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions with vehicle or suspending agents, e.g. slip
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
92.
COMPOSITE OXIDE POWDER AND PRODUCTION METHOD THEREOF
The composite oxide powder according to the present invention has a composition represented by composition formula (1) and a specific surface area β (m23-δ3-δ (in the formula: A is one or more elements selected from among La, Sr and Ca; B is one or more elements selected from among Fe, Co, Ni and Mn; and 0≦δ<1). Formula (2): specific surface area β (m2/g) = specific surface area γ - specific surface area ε (in the formula: specific surface area γ (m2/g) is a cumulative value of specific surface area values within an entire pore diameter range measured by mercury intrusion porosimetry; and specific surface area ε (m25050) in a particle size distribution calculated using a particle size distribution measurement apparatus.)
Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and the skewness Rsk of the surface is a positive value.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face.
Provided is a GaAs wafer which has a reduced carrier concentration and a low dislocation density, and in which the ratio of the area of regions having a zero dislocation density relative to the area of the GaAs wafer is high. This GaAs wafer is characterized by having a silicon concentration of not less than 1.0×1017cm-3and less than 1.1×1018cm-3, an indium concentration of not less than 3.0×1018cm-3and less than 3.0×1019cm-3, and a boron concentration of not less than 2.5×1018cm-3, and in that the carrier concentration is 1.0×1016cm-3-4.0×1017cm-3 inclusive and that the ratio of the area of regions having a zero dislocation density relative to the area of the wafer is not less than 91.0%.
Provided are: a silver powder which, when used as an electroconductive paste, rarely causes the breaking of a wire even when the wire width of the wire is reduced and has a smaller volume resistivity compared with those of the conventional silver powders; an electroconductive paste containing a silver powder as an electroconductive filler; and a method for producing a silver powder. The silver powder comprises aggregates of silver particles, and has an apparent density of 8.2 g/cm3to 9.2 g/cm3 inclusive, in which the ratio of the line length of an outer peripheral line of each of the silver particles in a particle cross-sectional surface to the line length of a line circumscribed around the outer periphery of the particle cross-sectional surface is 1.1 to 1.4 inclusive.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
5050 of 1.5 μm or less as measured by a laser diffraction particle size distribution measurement method, is added to a slurry of silver powder, and the surface of the silver powder is coated with a surface treatment agent and then further coated with a polyvalent carboxylic acid, whereby an electrode formed using a paste of the silver powder can have low resistance.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/102 - Metallic powder coated with organic material
98.
SILVER POWDER AND METHOD FOR PRODUCING SILVER POWDER
Provided are: a silver powder suitable as a conductive filler for a conductive paste that can be fired at low temperature; and a method for producing the silver powder. The method for producing a silver powder comprises: an azole addition step in which an azole is added to an aqueous silver ammine complex solution to obtain a first liquid; a reducing agent addition step in which a reducing agent is added to the first liquid to obtain a second liquid; and a fatty acid addition step in which a fatty acid is added to the second liquid to obtain a third liquid, wherein the fatty acid is an unsaturated fatty acid containing two or more double bonds.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
99.
Hexagonal ferrite magnetic powder and method for producing same
3 or less. A method for producing hexagonal ferrite magnetic powder includes a step of performing a treatment of immersing hexagonal ferrite magnetic powder containing Bi in a solution having dissolved therein a compound X that forms a complex with Bi, so as to elute a part of Bi existing in the hexagonal ferrite magnetic powder into the solution.
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
H01F 1/36 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.
