The present invention improves the characteristics of an AlN template substrate. An AlN template substrate according to the present invention is characterized in that: the AlN template substrate has an AlN layer formed on a main surface of a sapphire substrate; the main surface of the sapphire substrate has a C-plane inclined at an off angle of 0.02°-0.35°; and a step linear rate is at least 90%, the step linear rate being obtained by dividing the linear distance connecting a first contact point which is between a ridge line of a step in an AFM image of a surface of the AlN layer and an edge of the AFM image, and a second contact point by the length of the ridge line of the step extending from the first contact point to the second contact point.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
2.
COPPER-CONTAINING SILVER POWDER, CONDUCTIVE PASTE, CONDUCTIVE FILM, AND SOLAR BATTERY CELL
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of a conductive film. The present invention pertains to a copper-containing silver powder. In a differential curve of a TMA curve from 100°C to 600°C obtained by thermomechanical analysis in which the temperature of the copper-containing silver powder is raised at a temperature increase rate of 10°C/min, the copper-containing silver powder has an expansion peak and has, on the lower temperature side from the expansion peak, a first shrinkage peak at which the dTMA is -0.10%/min or less.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Provided are a silver powder that can reduce line resistance and a method of producing the same. The silver powder has a diameter at a cumulative value of 50% of 3 μm or more and a ratio of particles of 10 μm or larger of 10% or less. The silver powder includes flake-like particles having a major axis of 6 μm or more and irregularly shaped particles having a major axis of less than 6 μm, an average aspect ratio that is a ratio of average major axis relative to average thickness of the flake-like particles is 8 or more, and a shape factor that is a ratio of area of a circle having average maximum length of the irregularly shaped particles as a diameter relative to average particle area of the irregularly shaped particles is 1.7 to 1.9. Ignition loss is 0.1 wt % to 0.4 wt %.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
4.
COPPER-CONTAINING SILVER POWDER, METHOD FOR PRODUCING SAME, ELECTROCONDUCTIVE PASTE, ELECTROCONDUCTIVE FILM, AND SOLAR BATTERY CELL
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of an electroconductive film. The present invention is a copper-containing silver powder having a true density of less than 10 g/cm3 and a copper content of 10 to 10,000 ppm.
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Provided are an ultraviolet light-emitting element that enables high light emission output and a method of producing the same. The light-emitting element (100) includes, in stated order: an n-type semiconductor layer (3) formed of AlxGa1-xN having an Al composition ratio x; a quantum well-type light-emitting layer (4); a p-type electron blocking layer (6) formed of AlyGa1-yN having an Al composition ratio y; a p-type cladding layer (7) formed of AlzGa1-zN having an Al composition ratio z; and a p-type GaN contact layer (8). The p-type electron blocking layer (6) has an Al composition ratio y of 0.35 to 0.45 and a thickness of 11 nm to 70 nm. The total thickness of the p-type electron blocking layer (6) and p-type cladding layer (7) is 73 nm to 100 nm. The thickness of the p-type GaN contact layer (8) is 5 nm to 15 nm.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
6.
METHOD OF MANUFACTURING SILICON-OXIDE-COATED SOFT MAGNETIC POWDER
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Means for Solution] A highly insulating silicon oxide-coated soft magnetic powder, in which the ratio of a volume-based cumulative 50% particle diameter D50 (HE) according to a dry laser diffraction particle size distribution analysis to the same particle diameter D50 (MT) according to a wet laser diffraction particle size distribution analysis is 0.7 or more, and a coverage ratio R defined by R=Si×100/(Si+M) (wherein Si and M are molar fractions of Si and elements constituting the soft magnetic powder) is 70% or more is obtained by subjecting a slurry containing a soft magnetic powder containing 20 mass % or more of iron and a hydrolysate of a silicon alkoxide to a dispersion treatment when the surface of the soft magnetic powder is coated with the hydrolysate in a mixed solvent of water and an organic substance.
Provided are a silver powder that when used as a conductive paste, has low tendency to experience disconnection even with reduced line width and has lower volume resistivity than is conventionally the case, a conductive paste containing such a silver powder as a conductive filler, and a method of producing such a silver powder. The silver powder is a collection of silver particles that has an apparent density of not less than 8.2 g/cm3 and not more than 9.2 g/cm3 and a value of not less than 1.1 and not more than 1.4 for a ratio of length of a perimeter in a particle cross-section for the silver particles and length of a line circumscribing a periphery of the particle cross-section.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
Provided is a mixed silver powder capable of reducing the specific resistance of a conductive film. This mixed silver powder comprises first silver particles, second silver particles, and third silver particles that are graded by the long-side length, wherein: the average value of the aspect ratio of the first silver particles is at least 2; the average value of the aspect ratio of the second silver particles is at least 1.5 and less than 2; the average value of the aspect ratio of the third silver particles is less than 1.5; within the mixed silver powder, the proportion by the particle count of the first silver particles is at least 0.5% and no more than 5%, the proportion by the particle count of the second silver particles is at least 10%, and the proportion by the particle count of the third silver particles is at least 15%; the average value of the ratio α, calculated using the formula (1) ratio α = perimeter length of second silver particle / (long-side length of second silver particle × 2 + short-side length of second silver particle × 2), is at least 0.84; and a polyvalent carboxylic acid adheres to the surface of at least one type of silver particles chosen from the group consisting of the first silver particles, the second silver particles, and the third silver particles.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/102 - Metallic powder coated with organic material
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
9.
GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT
Provided is a GaAs wafer having suppressed carrier concentration and low dislocation density, as well as a large proportion of the area of a region with zero dislocation density to the GaAs wafer surface. The GaAs wafer has a silicon concentration of 1.0×1017 cm−3 or more and less than 1.1×1018 cm−3; an indium concentration of 3.0×1018 cm−3 or more and less than 3.0×1019 cm−3; a boron concentration of 2.5×1018 cm−3 or more; a carrier concentration of 1.0×1016 cm−3 or more and 4.0×1017 cm−3 or less; and a proportion of the area of a region with zero dislocation density to the wafer surface of 91.0% or more.
C30B 11/04 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
10.
SILVER POWDER, MIXED SILVER POWDER AND CONDUCTIVE PASTE, AND METHOD FOR PRODUCING SILVER POWDER AND MIXED SILVER POWDER
The present invention provides: a silver powder and a mixed powder, which are each capable of reducing the resistance of an electrode wiring line when the wiring line is printed; and a conductive paste which uses the same. This silver powder contains, with respect to all particles, not less than 20% but less than 95% of silver particles, in each of which the main region of the upper surface of the silver particle is the (111) plane or a plane close to the (111) plane, the silver particles having a KAM value of 0.4 to 1.0 inclusive.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
11.
SILVER POWDER AND METHOD OF PRODUCING SILVER POWDER
Provided are a silver powder that is suitable as a conductive filler for a conductive paste that enables low-temperature firing and a method of producing this silver powder. The method of producing a silver powder includes an azole addition step of adding an azole to a silver ammine complex aqueous solution to obtain a first liquid, a reductant addition step of adding a reductant to the first liquid to obtain a second liquid, and a fatty acid addition step of adding a fatty acid to the second liquid to obtain a third liquid. The fatty acid is an unsaturated fatty acid including two or more double bonds.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/102 - Metallic powder coated with organic material
A perovskite-type composite oxide powder according to the present invention contains La, further contains at least one element selected from the group consisting of Sr, Ca, Co, Ni, Mn, and Fe, has a BET specific surface area less than 6.0 m290B10B50B90A10A50A10509090 respectively represent the volume-based cumulative 10% particle size, cumulative 50% particle size, and cumulative 90% particle size as measured by a particle size distribution measuring device by using a laser diffraction scattering method, and having the suffix "A" indicates a particle size obtained after ultrasonic dispersion and having the suffix "B" indicates particle size before ultrasonic dispersion.
The present invention detects an etch pit with high accuracy. A wafer inspection device (10) is provided with: a data input interface (11) for acquiring parameters used for detecting an etch pit; an image input interface (13) for acquiring a captured image of the surface of a wafer; and a control unit (14) for analyzing the captured image on the basis of the parameters and detecting an etch pit appearing on the surface of the wafer. The captured image is taken by means of an illumination device for supplying light to the wafer and an imaging device for capturing an image of the wafer. The captured image is an image captured such that the long axis of the etch pit is inclined by 30° or more from a line perpendicular to a line connecting the illumination device and the imaging device. The parameters include a luminance threshold value and a range of the inclination angle of the etch pit. The control unit (14) detects, as an etch pit, an isolated point at which the angle with respect to an image reference axis is within the range of the inclination angle.
Provided are a gallium-containing silver powder, and a production method thereof. The gallium-containing silver powder can supply gallium as a p-type impurity in a suitable form, can exhibit low resistance through low-temperature sintering and can exhibit lower electrical resistance compared to a case in which aluminum is added, through high-temperature sintering. The gallium-containing silver powder according to the present invention has a median diameter D50 of 0.2 μm to 5.0 μm in terms of the volume of gallium-containing silver powder as measured by laser diffraction.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
15.
GALLIUM POWDER, MIXED POWDER, METHOD FOR PRODUCING GALLIUM POWDER DISPERSION, METHOD FOR PRODUCING GALLIUM POWDER, GALLIUM POWDER DISPERSION, AND CONDUCTIVE PASTE
Gallium powder of a small particle size is obtained, and a mixed powder containing said gallium powder that enables making a conductive paste that yields a low-resistance electrode is provided. The gallium powder according to the present invention has an SEM average diameter of from 0.2 μm to 2 μm and a surfactant selected from fatty acids, azole compounds, alkenylsuccinic acids, aliphatic amines, or salts thereof or anhydrides thereof is adhered to the surface of the powder.
50 obtained by a laser diffraction particle size distribution analysis of 1.5 μm or less to a slurry of a silver powder. The surface of the silver powder is coated with the surface treatment agent. The surface of the silver powder is further coated with a polyvalent carboxylic acid in a step of producing the silver powder.
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
C09C 3/08 - Treatment with low-molecular-weight organic compounds
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
17.
PEROVSKITE-TYPE COMPOSITE OXIDE POWDER AND AIR ELECTRODE FOR SOLID OXIDE FUEL CELL AND SOLID OXIDE FUEL CELL USING THE SAME
In a perovskite-type composite oxide powder according to the present invention, the geometric standard deviation value of the maximum Feret diameter of the perovskite-type composite oxide powder calculated by performing image analysis on an SEM image acquired with a scanning electron microscope is equal to or greater than 1.01 and less than 1.60, and when it is assumed that the perovskite-type composite oxide powder is spherical, the ratio (B/A) of an area value B directly calculated by the image analysis to an area value A calculated from the maximum Feret diameter is equal to or greater than 0.7 and less than 1.0. In this way, the perovskite-type composite oxide powder is used as the air electrode material of an SOFC, and thus high conductivity as compared with a conventional air electrode material is obtained.
H01M 12/06 - Hybrid cellsManufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type with one metallic and one gaseous electrode
18.
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT
xyzzAs (where 0.49 ≤ x ≤ 0.55, 0.10 ≤ z < 0.35 and x + y + z = 1), and the developed interfacial area ratio (Sdr) of a light extraction surface of the cladding layer having the second conductivity type is 4.0 or more.
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
19.
POWDER INCLUDING NIOBIUM COMPLEX AND LITHIUM AND PRODUCTION METHOD THEREOF, AND PRODUCTION METHOD OF LITHIUM SECONDARY BATTERY POSITIVE ELECTRODE ACTIVE MATERIAL HAVING COATED LAYER CONTAINING LITHIUM NIOBATE
A powder contains a niobium complex and lithium, an amount of niobium being 25 mass % or more and 75 mass % or less, a proportion of niobium in metal elements of the powder is 0.775 or more and 0.950 or less in terms of mass ratio. When the powder is dissolved in 8 times its mass of water at 25° C., a niobium content contained in a filtrate thereof is 80 mass % or more of an amount of niobium contained in the powder before dissolution. The powder is obtained by mixing a niobium compound, a lithium compound, an alkali, hydrogen peroxide, and water to obtain an aqueous solution containing a niobium complex and lithium and then drying the solution at a temperature equal to or lower than a decomposition temperature of the niobium complex. The powder is suitable for preparing a lithium niobate precursor solution for coating positive electrode active material particles.
Provided are a silver powder having powder physical properties enabling reduction of volume resistivity after firing and a method of producing this silver powder. The silver powder has a tap density of 4.8 g/mL or more, a TAP/D50 value (value determined by dividing the tap density (g/mL) by the volume-based median diameter (μm)) of not less than 7 and not more than 15, and a specific surface area of not less than 0.75 m2/g and not more than 1.3 m2/g.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
21.
LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
A light-emitting element having high emission output power and light emission efficiency and a method of manufacturing of the same are provided. A light-emitting element according to the present disclosure includes an n-type semiconductor layer; an InAsSbP active layer containing at least In and As on the n-type semiconductor layer; a p-type semiconductor layer that is lattice-matched with the InAsSbP active layer, on the InAsSbP active layer; and a p-type InGaAs window layer that is lattice-mismatched with the p-type semiconductor layer, on the p-type semiconductor layer, wherein the p-type semiconductor layer has a thickness of 20 nm or more and 520 nm or less.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
22.
CARRIER CORE MATERIAL AND ELECTROPHOTOGRAPHIC DEVELOPMENT CARRIER USING SAME AND ELECTROPHOTOGRAPHIC DEVELOPER
A carrier core material includes ferrite particles, contains CaSiO3, and has a true density at least equal to 3.5 g/cm3 and at most equal to 4.5 g/cm3. A particle strength index calculated from formula (1) is preferably at most equal to 1.5% by volume. (1): Particle strength index=V2−V1 (In the formula, V1: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material before crushing test, and V2: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material after crushing test) Crushing test conditions: 30 g of carrier core material crushed using a sample mill for 60 seconds at a rotational speed of 14000 rpm.
To provide a flaky silver powder having a tapped density of from 0.8 g/mL to 1.9 g/mL, and a cumulative 50th percentile particle diameter (D50) of from 2 μm to 7 μm, where the cumulative 50th percentile particle diameter (D50) is measured by laser diffraction or laser scattering particle size analysis.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
24.
METHOD OF PRODUCING GAAS WAFER, AND GAAS WAFER GROUP
A method of producing a GaAs wafer having excellent OF orientation stability even in a GaAs wafer having an off angle, and a GaAs wafer group are provided. A method of producing a GaAs wafer includes: a grinding step of grinding a peripheral surface of a GaAs ingot including formation of a provisional orientation flat; a slicing step of slicing the GaAs ingot after the grinding step to cut out a material wafer having an off angle; and a cleaving step of applying marking to the material wafer according to an orientation of an orientation flat determined based on the provisional orientation flat and cleaving the material wafer toward a peripheral surface of the material wafer from the marking to form the orientation flat.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Provided are a silver powder and a method of producing the same. The method of producing the silver powder includes a first surface smoothing step of causing fine silver particles having internal voids to mechanically collide with one another; a fine powder removal step of dispersing fine silver particles present after the first surface smoothing step using high-pressure airflow while removing fine powder; and a second surface smoothing step of causing fine silver particles present after the fine powder removal step to mechanically collide with one another.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
H01B 1/20 - Conductive material dispersed in non-conductive organic material
26.
ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SAME
The present invention provides: an ultraviolet light emitting element which achieves a high light emission output; and a method for producing this ultraviolet light emitting element. This ultraviolet light emitting element is provided with: a transparent substrate which has a main surface that serves as a light extraction surface; an AlN layer which is positioned on the transparent substrate; an n-type semiconductor layer which is positioned on the AlN layer; a quantum well light emitting layer which is positioned on the n-type semiconductor layer; a p-type semiconductor layer which is positioned directly on the quantum well light emitting layer; and a reflective electrode which is positioned directly on the p-type semiconductor layer. The lateral surface of the transparent substrate is roughened; the thickness L (nm) of the p-type semiconductor layer, the luminescence center wavelength λ (nm) by the quantum well light emitting layer, the refractive index n of the p-type semiconductor layer, a natural number k, and the emission angle θ of light heading toward the inside of the p-type semiconductor layer from the quantum well light emitting layer satisfy 2L/cosθ = λ(2k + 1)/2n; and in cases where the main surface and the lateral surface of the transparent substrate are flat, the emission angle θ is within the range where light is not extracted from the transparent substrate to the air.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Provided is a production method for an optical semiconductor element having a good yield rate due to damage to a wafer by grinding being inhibited. Specifically provided is a production method for an optical semiconductor element, the production method having a step for forming a compound semiconductor layer laminate on one main surface of a compound semiconductor substrate having cleavability and a grinding step for grinding the other main surface of the substrate, wherein the skewness (Ssk) of the ground surface of the substrate in a surface roughness measurement is set to be positive immediately after the grinding step.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
29.
III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a III-V compound semiconductor light-emitting element that has better light emission output with respect to injected power, as compared to conventional light-emitting elements. A III-V compound semiconductor light-emitting element according to the present invention has an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in this order and has an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a laminated structure formed by repeatedly stacking barrier layers and well layers. In a conduction band, a band gap of the electron blocking layer is larger than a band gap of the barrier layer and a band gap of the p-type cladding layer, and a band gap of the p-type cladding layer is larger than a band gap of the barrier layer. In a valence band, the band gap of the electron blocking layer lies between the band gap of the barrier layer and the band gap of the cladding layer.
Provided is a semiconductor light-emitting device for which detrimental effects such as discoloration of an electrode or emission failure due to migration are suppressed even when a joint material containing Ag is used, and a method of producing the same. The semiconductor light-emitting device includes a p-type semiconductor layer, a p-type electrode provided on the p-type semiconductor layer, and a pad provided on the p-type electrode. The p-type electrode at least has an ohmic metal layer placed on the p-type semiconductor layer side and a barrier layer that is placed closer to the pad than the ohmic metal layer and includes a TiN layer. In a top view, when a region of the barrier layer that does not overlap an electrical connection region between the pad and the barrier layer is defined as a surface diffusion inhibiting surface, the surface diffusion inhibiting surface is formed in a circular pattern.
Provided is a semiconductor light-emitting element having better light-emitting characteristics than conventional light-emitting elements. A semiconductor light-emitting element according to the present invention comprises a light-emitting layer having a laminate obtained by repeatedly laminating a first group III-V compound semiconductor layer and a second group III-V compound semiconductor layer, wherein: the group III element in the first and second group III-V compound semiconductor layers is one or more selected from the group consisting of Al, Ga, and In; the group V element in the first and second group III-V compound semiconductor layers is one or more selected from the group consisting of As, Sb, and P; the composition wavelength difference between the composition wavelength of the first group III-V compound semiconductor layer and the composition wavelength of the second group III-V compound semiconductor layer is at least 70 nm; and, in a band structure of the laminate, the well depth (Dc) on a conduction band side is greater than the well depth (Dv) on a valence band side, and Dc/(Dc+Dv) is at least 65%.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
32.
SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND MANUFACTURING METHOD THEREFOR
Provided is a semiconductor light receiving element having high light receiving sensitivity and a high ESD withstand voltage. The semiconductor light receiving element 100 comprises an n-type InP substrate 110, an n-type InGaAs light absorbing layer 130, and an InP window layer 140, and has a p-type impurity diffusion region 150 formed within the InP window layer 140 to reach the upper part of the n-type InGaAs light absorbing layer 130, wherein the n-type InGaAs light absorbing layer 130 has a thickness of 2.2 µm or more and a carrier density due to n-type impurities of 2.5×1015/cm3 or more.
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500/cm2 or less.
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
34.
Silver powder, production method thereof, and conductive paste
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
35.
METHOD FOR PRODUCING SILVER POWDER, SILVER POWDER AND CONDUCTIVE PASTE
The present invention provides: a method for producing a silver powder that enables the preparation of a conductive paste which is capable of forming a wiring pattern that has desired line width and height; and this silver powder. A method for producing a silver powder according to the present invention comprises: a crushing step in which an agglomerated silver powder is crushed by means of an air flow type pulverizer 2; and a classification step in which the silver powder after the crushing step is classified by means of a pneumatic classifier 3. With respect to this method for producing a silver powder, the agglomerated silver powder has a moisture content of 2 wt% to 20 wt%; a compressed air at a temperature of 80°C to 180°C is supplied, as a supply air, to the air flow type pulverizer 2 in the crushing step; the exhaust of the air flow type pulverizer 2 and the silver powder after the crushing step are supplied to the pneumatic classifier 3 in the classification step; and the exhaust has a temperature of 30°C or more and a volumetric humidity of 20 g/m3 or more.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
36.
MAGNETIC POWDER FOR MAGNETIC RECORDING MEDIUM, AND PRODUCTION METHOD THEREOF
A magnetic powder for a magnetic recording medium includes magnetic particles in which Ba in hexagonal barium ferrite is partially substituted with Sr, wherein a Dx volume represented by Dx volume (nm3) = Dxc × π × (Dxa/2)2 is 2,200 nm3 or less, and an Sr/(Ba+Sr) molar ratio is 0.01 to 0.15. One that satisfies Ku ≥ 0.1 × [Sr/(Ba+Sr) molar ratio] + 0.13 is more preferred. For the formulas, Dxc is a crystallite diameter (nm) in a c-axis direction of a hexagonal ferrite crystal lattice, Dxa is a crystallite diameter (nm) in an a-axis direction of the same crystal lattice, π is a circular constant, and Ku is a magnetocrystalline anisotropy constant (MJ/m3). By providing the hexagonal ferrite magnetic powder formed of fine particles, an effect of improving the perpendicular squareness ratio SQ of a magnetic recording medium is large.
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
37.
SPHERICAL SILVER POWDER, PRODUCTION METHOD FOR SPHERICAL SILVER POWDER, SPHERICAL SILVER POWDER PRODUCTION DEVICE, AND ELECTRICALLY CONDUCTIVE PASTE
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
38.
SPHERICAL SILVER POWDER, METHOD FOR PRODUCING SPHERICAL SILVER POWDER, APPARATUS FOR PRODUCING SPHERICAL SILVER POWDER, AND CONDUCTIVE PASTE
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
There is provided a bonding paste capable of forming a uniform bonding layer by reducing occurrence of voids at edges even when a bonding area is large, and bonding method using the paste, and provides a metal paste for bonding containing at least metal nanoparticles (A) having a number average primary particle size of 10 to 100 nm, wherein a cumulative weight loss value (L100) when a temperature is raised from 40° C. to 100° C. is 75 or less, and a cumulative weight loss value (L150) when a temperature is raised from 40° C. to 150° C. is 90 or more, and a cumulative weight loss value (L200) when a temperature is raised from 40° C. to 200° C. is 98 or more, based on 100 cumulative weight loss value (L700) when the paste is heated from 40° C. to 700° C. at a heating rate of 3° C./min in a nitrogen atmosphere.
[Problem] A hexagonal barium ferrite magnetic powder formed of fine particles, wherein the anisotropic magnetic field distribution of a magnetic recording medium can be made to fall within a range effective in both improving the recording density and improving the SNR is provided.
[Problem] A hexagonal barium ferrite magnetic powder formed of fine particles, wherein the anisotropic magnetic field distribution of a magnetic recording medium can be made to fall within a range effective in both improving the recording density and improving the SNR is provided.
[Solution] A magnetic powder for a magnetic recording medium including magnetic particles in which Ba in hexagonal barium ferrite is partially substituted with Sr, wherein a Dx volume represented by the following formula (1) is 2,200 nm3 or less, an Sr/(Ba+Sr) molar ratio is 0.01 to 0.30, and an anisotropic magnetic field distribution is 1.00 or less.
[Problem] A hexagonal barium ferrite magnetic powder formed of fine particles, wherein the anisotropic magnetic field distribution of a magnetic recording medium can be made to fall within a range effective in both improving the recording density and improving the SNR is provided.
[Solution] A magnetic powder for a magnetic recording medium including magnetic particles in which Ba in hexagonal barium ferrite is partially substituted with Sr, wherein a Dx volume represented by the following formula (1) is 2,200 nm3 or less, an Sr/(Ba+Sr) molar ratio is 0.01 to 0.30, and an anisotropic magnetic field distribution is 1.00 or less.
Dx volume (nm3)=Dxc×Π×(Dxa/2)2 (1)
[Problem] A hexagonal barium ferrite magnetic powder formed of fine particles, wherein the anisotropic magnetic field distribution of a magnetic recording medium can be made to fall within a range effective in both improving the recording density and improving the SNR is provided.
[Solution] A magnetic powder for a magnetic recording medium including magnetic particles in which Ba in hexagonal barium ferrite is partially substituted with Sr, wherein a Dx volume represented by the following formula (1) is 2,200 nm3 or less, an Sr/(Ba+Sr) molar ratio is 0.01 to 0.30, and an anisotropic magnetic field distribution is 1.00 or less.
Dx volume (nm3)=Dxc×Π×(Dxa/2)2 (1)
Here, Dxc is a crystallite diameter (nm) in a c-axis direction of a hexagonal ferrite crystal lattice, Dxa is a crystallite diameter (nm) in an a-axis direction of the same crystal lattice, and n is a circular constant.
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
41.
BLOCK-LIKE SILVER POWDER AND MANUFACTURING METHOD THEREOF, AND ELECTRICALLY CONDUCTIVE PASTE
Provided is a block-like silver powder having a BET specific surface area of 0.5 m2/g or less, an average aspect ratio when 100 or more silver particle cross sections are observed of 1.2 or greater and less than 2.0, and an average ratio of a peripheral length of a silver particle to a peripheral length of a circumscribing rectangular shape expressed by (Formula 1) of 0.84 or greater. (Formula 1): L/(2 x major diameter + 2 x minor diameter), where L is the peripheral length of the silver particle, and major diameter and minor diameter are the major diameter (μm) and the minor diameter (μm) of a rectangular shape having the smallest area of rectangular shapes circumscribing a contour of a silver particle cross section.
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
43.
GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER
Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×1017 cm−3 or more and less than 1.5×1018 cm−3, an indium concentration of 1.0×1017cm−3 or more and less than 6.5×1018 cm−3, a carrier concentration of 5.5×1017 cm−3 or less, and an average dislocation density of 500/cm2 or less.
A perovskite-type composite oxide powder is a perovskite-type composite oxide powder represented by a general formula ABO3-δ (where δ represents an amount of deficiency of oxygen and 0≤δ<1), an element contained in an A site is La, elements contained in a B site are Co and Ni and a crystallite size determined by a Williamson-Hall method is equal to or greater than 20 nm and equal to or less than 100 nm. In this way, when the perovskite-type composite oxide powder is used as an air electrode material for a fuel cell, an air electrode in which the resistance thereof is low and the conductivity thereof is high can be obtained.
H01M 8/1246 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte the electrolyte consisting of oxides
A dispersed iron oxide magnetic powder slurry, in which the average secondary particle diameter of ε-type iron oxide measured with a dynamic light scattering particle size distribution analyzer is 65 nm or less, and which has good dispersibility, is obtained by adding a quaternary ammonium salt serving as a first dispersant and an alkali to a slurry containing ε-type iron oxide particles to bring the pH at 25° C. to 11 or higher, and thereafter adding an organic compound, which is an organic acid serving as a second dispersant and having two or more carboxy groups in the molecule, and in which one type or two types of a hydroxy group and an amino group are bound to carbon that does not constitute a carboxy group other than the carboxy groups to bring the pH at 25° C. of the slurry to 4 or higher and lower than 11.
G11B 5/714 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the dimension of the magnetic particles
H01F 1/11 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
47.
SILVER POWDER, PRODUCTION METHOD FOR SILVER POWDER, AND CONDUCTIVE PASTE
Provided are a silver powder that can reduce line resistance and a production method for the silver powder. The present invention provides a silver powder that, with respect to a volume-based particle size distribution measured by a laser diffraction/scattering particle size distribution measurement device, has a cumulative 50% diameter of at least 3 μm and is no more than 10% particles that are 10 μm or larger. With respect to the particle shapes observed by image analysis based on an SEM image, the silver powder includes flaky particles that have a length of at least 6 μm and amorphous particles that have a length of less than 6 μm, the average aspect ratio that is the ratio between the average length and the average thickness of the flaky particles being at least 8, and the shape factor that is the ratio between the area of a circle that has a diameter that is the average maximum length of the amorphous particles and the average particle area of the amorphous particles being 1.7–1.9. The silver powder has an ignition loss value of 0.1–0.4 wt%.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
48.
ULTRAVIOLET LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR
x1–xy1–yz1–z1–zN with an Al compositional ratio z; and a p-type GaN contact layer 8. The p-type electron blocking layer 6 has an Al compositional ratio y of 0.35 to 0.45 and a thickness of 11 nm to 70 nm. The total thickness of the p-type electron blocking layer 6 and the p-type cladding layer 7 is 73 nm to 100 nm. The thickness of the p-type GaN contact layer 8 is 5 nm to 15 nm.
A silver powder containing: silver particles; and an adherent that is attached to surfaces of the silver particles and contains a metal oxide that has a melting point lower than a melting point of silver.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
C03C 4/14 - Compositions for glass with special properties for electro-conductive glass
B22F 1/08 - Metallic powder characterised by particles having an amorphous microstructure
B22F 1/16 - Metallic particles coated with a non-metal
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
C03C 8/16 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions with vehicle or suspending agents, e.g. slip
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
50.
COMPOSITE OXIDE POWDER AND PRODUCTION METHOD THEREOF
The composite oxide powder according to the present invention has a composition represented by composition formula (1) and a specific surface area β (m23-δ3-δ (in the formula: A is one or more elements selected from among La, Sr and Ca; B is one or more elements selected from among Fe, Co, Ni and Mn; and 0≦δ<1). Formula (2): specific surface area β (m2/g) = specific surface area γ - specific surface area ε (in the formula: specific surface area γ (m2/g) is a cumulative value of specific surface area values within an entire pore diameter range measured by mercury intrusion porosimetry; and specific surface area ε (m25050) in a particle size distribution calculated using a particle size distribution measurement apparatus.)
Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and the skewness Rsk of the surface is a positive value.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face.
Provided is a GaAs wafer which has a reduced carrier concentration and a low dislocation density, and in which the ratio of the area of regions having a zero dislocation density relative to the area of the GaAs wafer is high. This GaAs wafer is characterized by having a silicon concentration of not less than 1.0×1017cm-3and less than 1.1×1018cm-3, an indium concentration of not less than 3.0×1018cm-3and less than 3.0×1019cm-3, and a boron concentration of not less than 2.5×1018cm-3, and in that the carrier concentration is 1.0×1016cm-3-4.0×1017cm-3 inclusive and that the ratio of the area of regions having a zero dislocation density relative to the area of the wafer is not less than 91.0%.
Provided are: a silver powder which, when used as an electroconductive paste, rarely causes the breaking of a wire even when the wire width of the wire is reduced and has a smaller volume resistivity compared with those of the conventional silver powders; an electroconductive paste containing a silver powder as an electroconductive filler; and a method for producing a silver powder. The silver powder comprises aggregates of silver particles, and has an apparent density of 8.2 g/cm3to 9.2 g/cm3 inclusive, in which the ratio of the line length of an outer peripheral line of each of the silver particles in a particle cross-sectional surface to the line length of a line circumscribed around the outer periphery of the particle cross-sectional surface is 1.1 to 1.4 inclusive.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
5050 of 1.5 μm or less as measured by a laser diffraction particle size distribution measurement method, is added to a slurry of silver powder, and the surface of the silver powder is coated with a surface treatment agent and then further coated with a polyvalent carboxylic acid, whereby an electrode formed using a paste of the silver powder can have low resistance.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/102 - Metallic powder coated with organic material
56.
SILVER POWDER AND METHOD FOR PRODUCING SILVER POWDER
Provided are: a silver powder suitable as a conductive filler for a conductive paste that can be fired at low temperature; and a method for producing the silver powder. The method for producing a silver powder comprises: an azole addition step in which an azole is added to an aqueous silver ammine complex solution to obtain a first liquid; a reducing agent addition step in which a reducing agent is added to the first liquid to obtain a second liquid; and a fatty acid addition step in which a fatty acid is added to the second liquid to obtain a third liquid, wherein the fatty acid is an unsaturated fatty acid containing two or more double bonds.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
57.
HEXAGONAL FERRITE MAGNETIC POWDER AND METHOD FOR PRODUCING SAME
A hexagonal ferrite magnetic powder is significantly more useful for achieving simultaneously both the enhancement of the recording density and the enhancement of the SNR of a magnetic recording medium. The hexagonal ferrite magnetic powder contains Bi at a Bi/Fe molar ratio in a range of 0.035 or less, has a saturation magnetization σs of 42.0 Am2/kg or more and a Dx volume calculated based on the crystallite diameters of 1,800 nm3 or less. A method for producing hexagonal ferrite magnetic powder includes a step of performing a treatment of immersing hexagonal ferrite magnetic powder containing Bi in a solution having dissolved therein a compound X that forms a complex with Bi, so as to elute a part of Bi existing in the hexagonal ferrite magnetic powder into the solution.
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.
With respect to a perovskite composite oxide powder according to the present invention, the geometric standard deviation of the maximum Feret's diameter of the perovskite composite oxide powder is not less than 1.01 but less than 1.60 as calculated by image analyzing an SEM image thereof obtained with use of a scanning electronic microscope; and the ratio (B/A) of the area B that is directly calculated from the image analysis to the area A that is calculated from the maximum Feret's diameter assuming that the perovskite composite oxide powder is spherical is not less than 0.7 but less than 1.0. Consequently, an electrical conductivity that is higher than ever before can be achieved if this perovskite composite oxide powder is used as an air electrode material for SOFC.
H01M 12/06 - Hybrid cellsManufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type with one metallic and one gaseous electrode
A method is provided for producing a silver powder which has a smaller particle size distribution than the conventional one without changing the type of surface treatment agent, and also for enabling a low resistance when the silver powder is made into a paste to form an electrode. The method for producing a silver powder includes adding an O/W-type emulsion containing micelles of a surface treatment agent having a volume-based cumulative 50% particle diameter D50 obtained by a laser diffraction particle size distribution analysis of 1.5 μm or less to a slurry of a silver powder. The dispersibility of the silver powder in the slurry containing the silver powder is then improved.
B22F 1/16 - Metallic particles coated with a non-metal
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
61.
LITHIUM-CONTAINING OXIDE PRECURSOR SOLUTION FOR COATING ELECTRODE ACTIVE MATERIAL, AND METHOD FOR PRODUCING THE SAME
Provided is a lithium-containing oxide precursor solution for coating an electrode active material that is capable of improving the coverage of a coating layer that is formed by applying the lithium-containing oxide precursor solution to the surface of powder of the electrode active material and king it, and that is easy to handle in a normal atmosphere because a solution composed mainly of water is used as a solvent. The lithium-containing oxide precursor solution for coating an electrode active material includes Li in an amount of 0.1 mass % or more and 5.0 mass % or less, at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I in an amount of 0.05 mass % or more and 35 mass % or less, and water in an amount of 60 mass % or more and 98.4 mass % or less. The value of absorbance of the solution at a wavelength of 660 nm is 0.1 or less, and the value of surface energy thereof is 72 mN/m or less.
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 105 or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).
H01L 31/108 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
Provided are a coated active material having excellent properties that can reduce the reaction resistance of a battery, and a method for producing a coated active material that can achieve both a high processing speed and high processing quality. The method for producing a coated active material includes: mixing an electrode active material and a coating solution containing Li and an element M and having a surface energy of 72 mN/m or less to prepare a slurry; and drying the slurry in an air flow and thereby causing a Li-containing oxide to adhere to at least a portion of the surface of the electrode active material, to obtain a coated active material, where the element M is at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I.
To improve light emission efficiency, in a light-emitting element including a first InAs layer that is undoped or doped with an n-type dopant; an active layer including one or more InAsySb1-y layers (0
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
65.
Silicon-oxide-coated soft magnetic powder, and method for manufacturing same
A silicon oxide-coated soft magnetic powder, in which the ratio of a volume-based cumulative 50% particle diameter D50 (HE) according to a dry laser diffraction particle size distribution analysis to the same particle diameter D50 (MT) according to a wet laser diffraction particle size distribution analysis is 0.7 or more, and a coverage ratio R defined by R=Si×100/(Si+M) (Si and M are molar fractions of Si and elements constituting the soft magnetic powder) is 70% or more is obtained by subjecting a slurry containing a soft magnetic powder containing 20 mass % or more of iron and a hydrolysate of a silicon alkoxide to a dispersion treatment when the surface of the soft magnetic powder is coated with the hydrolysate in a mixed solvent of water and an organic substance. The powder has good insulation/dispersibility properties and a high filling factor during molding.
In a carrier core material according to the present invention, the volume moment mean D [4, 3] of O. Bluntness measured with an injection type image analysis particle size distribution meter is equal to or greater than 65% and equal to or less than 80%, and the volume moment mean D [4, 3] of ISO Roundness is equal to or greater than 80% and equal to or less than 86%. In this way, it is possible to suppress development memory and carrier adherence.
33, and has a true density at least equal to 3.5 g/cm3and at most equal to 4.5 g/cm3. A particle strength index calculated from formula (1) is preferably at most equal to 1.5% by volume. (1): Particle strength index = V2-V1 (In the formula, V1: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material before crushing test, and V2: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material after crushing test) Crushing test conditions: 30 g of carrier core material crushed using a sample mill for 60 seconds at a rotational speed of 14000 rpm
Provided is a method of producing a semiconductor optical device that makes it possible to improve the optical device properties of the semiconductor optical device including semiconductor layers containing at least In, As, and Sb. The method has a first step of forming an etching stop layer on an InAs growth substrate; a second step of forming a semiconductor laminate; a third step of forming a distribution portion; a fourth step of bonding the semiconductor laminate and the distribution portion to a support substrate with a metal bonding layer therebetween; and a fifth step of removing the InAs growth substrate.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
69.
POWDER INCLUDING NIOBIUM COMPLEX AND LITHIUM AND PRODUCTION METHOD THEREOF, AND PRODUCTION METHOD OF LITHIUM SECONDARY BATTERY POSITIVE ELECTRODE ACTIVE MATERIAL HAVING COATED LAYER CONTAINING LITHIUM NIOBATE
[Problem] To provide a powder that has a high solubility in water, and contains a niobium complex and lithium suitable for preparing a precursor solution of lithium niobate for coating, with lithium niobate which is a solid electrolyte, surfaces of positive electrode active material particles of a lithium ion secondary battery. [Solution] This powder including a niobium complex and lithium is obtained by: mixing a niobium compound, a lithium compound, an alkali, hydrogen peroxide, and water to obtain an aqueous solution containing a niobium complex and lithium; and drying the aqueous solution at a temperature not higher than the decomposition temperature of the niobium complex. The powder including a niobium complex and lithium contains 25-75 mass% of niobium. The proportion of niobium in metal elements contained in the powder is 0.775-0.950 as expressed in mass ratio. When the powder is dissolved in water having a temperature of 25ºC and a mass 8 times of the powder, the amount of niobium contained in a filtrate thereof is 80 mass% or more with respect to the amount of niobium contained in the powder before the dissolution.
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
70.
IRON-BASED OXIDE MAGNETIC POWDER AND METHOD FOR PRODUCING SAME
A method for making an iron-based oxide magnetic powder includes adding raw material solution containing trivalent iron ions, or trivalent iron ions and ions of a metal element that partially substitutes Fe sites, and an alkaline aqueous solution for neutralizing the raw material solution to a reaction system to adjust the pH of the reaction system to 1.0 or higher and 3.0 or lower. Hydroxycarboxylic acid is added to the obtained reaction solution and thereafter the pH of the reaction system is neutralized to 7.0 or higher and 10.0 or lower. The obtained precipitate of a substituent metal element-containing iron oxyhydroxide is coated with silicon oxide and then heated, whereby an iron-based oxide magnetic powder is obtained with a reduced content of fine and coarse particles, a particle shape close to a perfect sphere, and particles of ε-iron oxide in which Fe sites are partially substituted by other metal elements.
H01F 1/36 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
The point source light-emitting diode includes a substrate; an n-type cladding layer; a light emitting layer; a p-type cladding layer; an n-type current confinement layer; a p-type contact layer provided on the n-type current confinement layer; and a p-type electrode having a light emission window concentric with the opening. The window opening width of the light emission window is equal to or larger than an opening width of the opening. The point source light-emitting diode has a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer in the thickness direction. The light emitting layer has a non-implanted region that has a region width larger than the opening width of the light emission window and is concentric with the light emission window, and a hydrogen ion implanted region enclosing the non-implanted region.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
Provided are a silver powder and a method for producing the same. The method for producing the silver powder according to the present invention comprises: a first surface smoothing step in which fine silver particles, each having an internal void, are caused to mechanically collide with one another; a fine powder removal step in which a fine powder is removed while using a high pressure air stream to disperse the fine silver particles after the first surface smoothing step; and a second surface smoothing step in which the fine silver particles after the fine powder removal step are caused to mechanically collide with one another.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
Provided are a method for manufacturing a GaAs wafer having excellent OF orientation stability even for a GaAs wafer having an off angle, and a GaAs wafer group. A method for manufacturing a GaAs wafer, including: a polishing step for performing polishing including forming a temporary orientation flat in the circumferential surface of a GaAs ingot; a slicing step for performing slicing of the GaAs ingot that has undergone the polishing step and cutting off a raw-material wafer having an off angle; and a cleavage step for scribing the raw-material wafer in accordance with the direction of the orientation flat determined on the basis of the temporary orientation flat, and cleaving the raw-material wafer to the circumferential surface thereof, starting at the scribing, to form an orientation flat, the cleavage step comprising performing cleavage to a position at which the length (interval A) of a line segment extending perpendicularly to the circumferential surface of the raw-material wafer from the midpoint of the cleavage toward the radial outside of the raw-material wafer is 9 mm or greater.
The method of manufacturing an optical semiconductor device includes: a mounting step of placing an optical semiconductor chip on a package substrate made of ceramic; a storing step of storing the package substrate after the mounting step in a first dry atmosphere; a placing step of subjecting the optical semiconductor chip on the package substrate to a second dry atmosphere and placing a light transparent window on a joint portion of the package substrate with a joint material therebetween; and a sealing step of joining the joint portion and the light transparent window with the joint material in a low oxygen concentration atmosphere having an oxygen concentration of 1 vol % or less, thereby encapsulating the optical semiconductor chip in a confined space formed by the package substrate and the light transparent window.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
Provided are: a silver powder having powder physical properties capable of reducing volume resistivity after firing; and a production method therefor. This silver powder has: a tap density of at least 4.8 g/mL; a TAP/D50 value, obtained by dividing the tap density (g/mL) by a volume-based median diameter (μm), of 7-15; and a specific surface area of 0.75 m2/g to 1.3 m2/g.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
77.
MAGNETIC POWDER OF MAGNETOPLUMBITE-TYPE HEXAGONAL FERRITE AND METHOD FOR PRODUCING SAME, AND RADIO WAVE ABSORBER AND METHOD FOR PRODUCING SAME
(1-x)x(n-y-z)yzz (wherein A represents one or more elements selected from the group consisting of Sr, Ba and Ca; 0.01 ≤ x ≤ 0.70; 1.00 ≤ y ≤ 2.20; 11.00 ≤ n ≤ 12.50; and 0.00 ≤ z ≤ 1.00), which shows the atomic ratio among the metal elements.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 1/11 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
H01F 1/113 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles in a bonding agent
H05K 9/00 - Screening of apparatus or components against electric or magnetic fields
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
1; and a second lens attached to the side of the light-emitting element and the protruding surface of the first lens, in which the second lens has a concave curve from a peripheral side of the bottom surface of the first lens to the semiconductor layer side on the side of the light-emitting element.
There are provided a silver powder, which is able to form an electrically conductive film having a lower resistance value than that of conventional electrically conductive films when the silver powder is used as the material of an electrically conductive paste which is fired to form the electrically conductive film, and a method for producing the same. A first silver powder having one peak or more, at each of which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the first silver powder in a dry process by means of a laser diffraction particle size analyzer, is mixed with a second silver powder having two peaks or more, at each of which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the second silver powder in a dry process by means of a laser diffraction particle size analyzer, to produce a silver powder having three peaks or more, at each of which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the silver powder in a dry process by means of a laser diffraction particle size analyzer, the silver powder having one peak, at which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the silver powder in a wet process by means of a laser diffraction scattering particle size analyzer.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
81.
Solution and method for producing the same, and a method for producing active material, for secondary battery
A producing method of a solution that contains lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.3 mass % or less. The solution is suitable for forming a coating layer capable of improving battery characteristics of an active material in a battery.
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/1391 - Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
H01M 4/02 - Electrodes composed of, or comprising, active material
82.
OPERATIONAL METHOD FOR PUMP AND DEVICE COMPRISING PUMP
The present disclosure provides a point source type light-emitting diode and a manufacturing method thereof, which simplify a manufacturing process and have superior temperature-dependent characteristic. A point source type light-emitting diode includes a support substrate, a metal layer having a light reflecting surface, a current narrowing layer, a III-V compound semiconductor laminate sequentially having a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and a top electrode. The top electrode has an opening for ejecting light emitted by the active layer. The current narrowing layer includes a dielectric layer having a through hole and an intermediate electrode. In a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode. The thickness of the p-type semiconductor layer is between 0.5 μm and 3.0 μm inclusive.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
SUBSTITUTED EPSILON-IRON OXIDE MAGNETIC PARTICLE POWDER, PRODUCTION METHOD FOR SUBSTITUTED EPSILON-IRON OXIDE MAGNETIC PARTICLE POWDER, GREEN COMPACT, PRODUCTION METHOD FOR GREEN COMPACT, AND ELECTROMAGNETIC WAVE ABSORBER
A substituted ε-iron oxide magnetic particle powder having a reduced content of an α-type iron-based oxide and Fe sites of ε-Fe2O3 partially substituted by another metal element is obtained by neutralizing an acidic aqueous solution containing a trivalent iron ion and an ion of a metal that partially substitutes Fe sites to a pH of between 2.0 and 7.0. Thereafter, a silicon compound having a hydrolyzable group is added to a dispersion liquid containing an iron oxyhydroxide having a substituent metal element or a mixture of an iron oxyhydroxide and a hydroxide of a substituent metal element. The dispersion liquid is neutralized to a pH of 8.0 or higher and the iron oxyhydroxide having a substituent metal element or the mixture of the iron oxyhydroxide and the hydroxide of a substituent metal element is coated with a chemical reaction product of the silicon compound. The dispersion is then heated.
There are provided a magnetoplumbite-type hexagonal crystal ferrite magnetic powder which can be suitably used as the material of a radio wave absorber having an excellent radio wave absorbing power in the 76 GHz band, and a method for producing the same. In a method for producing a magnetoplumbite-type hexagonal crystal ferrite magnetic powder, the method comprising the steps of: mixing powders of the raw materials of a magnetoplumbite-type hexagonal crystal ferrite magnetic powder, which is expressed by a compositional formula of AFe(12-x)AlxO19 (A is at least one selected from the group consisting of Sr, Ba, Ca and Pb, x=1.0 to 2.2), to obtain a mixture; granulating and molding the mixture to obtain molded bodies; firing the molded bodies to obtain fired bodies; and pulverizing the fired bodies, there are prepared a plurality of firing containers (firing scabbards 10), each of which has an opening of the upper face thereof and a notch (10a) formed in the upper portion of the side face thereof so as to be communicated with the outside thereof, each of the firing containers being filled with the molded bodies, and the firing containers being stacked in a plurality of stages so as to close the opening of the top face of the lower firing container, to fire the molded bodies in a firing furnace (20).
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
H05K 9/00 - Screening of apparatus or components against electric or magnetic fields
SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT CONNECTION STRUCTURE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a semiconductor light-emitting element which, even when a bonding material containing Ag is used, suppresses adverse effects caused by migration, such as discoloration of an electrode or absence of light emission. Also provided is a method for manufacturing the semiconductor light-emitting element. This semiconductor light-emitting element comprises a p-type semiconductor layer, a p-type electrode provided on the p-type semiconductor layer, and a pad provided on the p-type electrode. The p-type electrode has an ohmic metal layer disposed on the p-type semiconductor layer side, and a barrier layer which is disposed more toward the pad side than the ohmic metal layer and which includes a TiN layer. When an area of the barrier layer that does not overlap in a top view with an electrical connection area between the pad and the barrier layer among the areas of the barrier layer is defined as a surface diffusion suppression plane, the surface diffusion suppression plane is formed in an annular shape.
METHOD OF PRODUCING REFLECTIVE ELECTRODE FOR DEEP ULTRAVIOLET LIGHT-EMITTING ELEMENT, METHOD OF PRODUCING DEEP ULTRAVIOLET LIGHT-EMITTING ELEMENT, AND DEEP ULTRAVIOLET LIGHT-EMITTING ELEMENT
Provided is a reflective electrode for a deep ultraviolet light-emitting element that enables a balance of both high light emission output and excellent reliability. A method of producing the reflective electrode for a deep ultraviolet light-emitting element includes: a first step of forming Ni with a thickness of 3 nm to 20 nm as a first metal layer on a p-type contact layer having a superlattice structure; a second step of forming Rh with a thickness of not less than 20 nm and not more than 2 μm as a reflective metal on the first metal layer; and a third step of performing heat treatment of the first metal layer and the second metal layer at not lower than 300° C. and not higher than 600° C.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Provided are a GaAs wafer that is particularly suitable for LiDAR sensor production and a method for producing a GaAs ingot that enables obtaining this GaAs wafer. This GaAs wafer includes: a silicon concentration of 5.0 x 10 17cm-3or greater but less than 3.5 x 1018cm-3; an indium concentration of 3.0 x 1017cm-3or greater but less than 3.0 x 1019cm-3; and a boron concentration of 1.0 x 1018cm-3or greater. The average dislocation density is 1500 dislocations/cm2 or less.
C30B 11/08 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
H01L 21/52 - Mounting semiconductor bodies in containers
90.
SUBSTITUTION-TYPE EPSILON-IRON OXIDE MAGNETIC PARTICLE POWDER, METHOD FOR PRODUCING SUBSTITUTION-TYPE EPSILON-IRON OXIDE MAGNETIC PARTICLE POWDER, GREEN COMPACT, METHOD FOR PRODUCING GREEN COMPACT, AND ELECTROMAGNETIC WAVE
A substitution-type ε-iron oxide magnetic particle powder having a reduced content of a non-magnetic α-type iron-based oxide and Fe sites of ε-Fe2O3 partially substituted by another metal element is obtained by neutralizing an acidic aqueous solution containing a trivalent iron ion and an ion of a metal that partially substitutes Fe sites to a pH of 2.0 or higher and 7.0 or lower. A silicon compound having a hydrolyzable group is added to a dispersion liquid containing an iron oxyhydroxide having a substituent metal element or a mixture of an iron oxyhydroxide and a hydroxide of a substituent metal element. The dispersion liquid is neutralized to a pH of 8.0 or higher and the iron oxyhydroxide having a substituent metal element or the mixture of the iron oxyhydroxide and the hydroxide of a substituent metal element is coated with a chemical reaction product of the silicon compound and then heated.
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
H05K 9/00 - Screening of apparatus or components against electric or magnetic fields
91.
DISPERSED IRON OXIDE MAGNETIC POWDER SLURRY AND METHOD FOR PRODUCING SAME
[Problem] To provide a method for producing a dispersed iron oxide magnetic powder slurry that exhibits an excellent dispersity even in the weakly acidic region to medium alkaline region. [Solution] A dispersed iron oxide magnetic powder slurry is obtained that exhibits an excellent dispersity and an average secondary particle diameter for ε-type iron oxide of not more than 65 nm as measured using a dynamic light scattering particle size distribution analyzer. The slurry is obtained by adding alkali and a quaternary ammonium salt constituting a first dispersing agent to a slurry that contains ε-type iron oxide particles and bringing the pH at 25°C to at least 11, followed by adding an organic compound and bringing the pH of the slurry at 25°C to at least 4 and less than 11. The organic compound is an organic acid, which constitutes a second dispersing agent and has at least two carboxy groups in the molecule, and in addition to these carboxy groups the organic compound has at least one or two types of the hydroxy group and/or amino group bonded to carbon that does not participate in the carboxy groups.
G11B 5/714 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the dimension of the magnetic particles
G11B 5/842 - Coating a support with a liquid magnetic dispersion
H01F 1/11 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
92.
Semiconductor light-emitting element and method of producing semiconductor light-emitting element
Provided is a semiconductor light-emitting element having improved light emission output. The semiconductor light-emitting element includes a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are repeatedly stacked. The first and second III-V compound semiconductor layers each contain three or more types of elements that are selected from Al, Ga, and In and from As, Sb, and P. The composition wavelength difference between the composition wavelength of the first III-V compound semiconductor layer and the composition wavelength of the second III-V compound semiconductor layer is 50 nm or less. The ratio of the lattice constant difference between the lattice constant of the first III-V compound semiconductor layer and the lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
This composite oxide powder is characterized by having a composition represented by compositional formula (1) and in that the ratio α/β of a specific surface area α (m2/g) calculated using a one point BET method and a specific surface area β (m2/g) calculated using formula (2) is more than 1.0 but not more than 1.5, and the specific surface area α is 20 m23-δ3-δ (in the formula, A is one or more elements selected from among La, Sr, Sm, Ca and Ba, B is one or more elements selected from among Fe, Co, Ni and Mn, and 0 ≤ δ < 1) Formula (2): specific surface area β (m2/g) = specific surface area γ-specific surface area ε (in the formula, specific surface area γ (m2/g) is a cumulative value of specific surface area values within an entire pore diameter range measured by mercury intrusion porosimetry, and specific surface area ε (m25050) in a particle size distribution calculated using a Microtrac particle size distribution measurement apparatus.)
The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
3-δ3-δ (where δ represents oxygen deficiency, and 0 ≤ δ < 1), an element contained at A site being LA, elements contained at B site being Co and Ni, and the crystallite diameter obtained by the Williamson-Hall method being 20-100 nm inclusive. When used as an air pole material of a fuel cell, an air pole that has a low resistance and a high electroconductivity is thereby obtained.
H01M 4/86 - Inert electrodes with catalytic activity, e.g. for fuel cells
H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
H01M 8/1246 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte the electrolyte consisting of oxides
97.
SOFT MAGNETIC POWDER, METHOD FOR PERFORMING HEAT TREATMENT OF SOFT MAGNETIC POWDER, SOFT MAGNETIC MATERIAL, DUST CORE, AND METHOD FOR PRODUCTION OF DUST CORE
A soft magnetic powder, including an Fe alloy, and containing 0.1 to 15 mass % of Si, wherein a ratio (Si/Fe) of an atomic concentration of Si and an atomic concentration of Fe is from 4.5 to 30 at a depth of 1 nm from a particle surface of the soft magnetic powder.
H01F 1/147 - Alloys characterised by their composition
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
99.
GAAS INGOT, METHOD FOR MANUFACTURING GAAS INGOT, AND GAAS WAFER
The present invention provides a GaAs ingot that enables the acquisition of a low-dislocation density GaAs wafer, said GaAs wafer having a carrier concentration of 5.5×1017cm-3or less and an average dislocation density of 500/cm2or less, by adding thereto Si together with a small amount of In. The GaAs ingot wherein the seed side and center of the drum part thereof have each a silicon concentration of 2.0×1017cm-3or more and less than 1.5×1018cm-3, an indium concentration of 1×1017cm-3or more and less than 6.5×1018cm-3, a carrier concentration of 5.5×1017cm-3or less, and an average dislocation density of 500/cm2 or less.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
100.
SOFT MAGNETIC POWDER, METHOD FOR PRODUCING SOFT MAGNETIC POWDER, SOFT MAGNETIC MATERIAL, POWDER MAGNETIC CORE, AND METHOD FOR PRODUCING POWDER MAGNETIC CORE
A soft magnetic powder composed of an Fe alloy including 0.1-15 mass% of Si and at least 1 ppm to less than 1,000 ppm of an alkali metal and/or an alkaline earth metal.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 1/14 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 1/26 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated by macromolecular organic substances
B22F 3/00 - Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sinteringApparatus specially adapted therefor
