METHOD FOR PRODUCING SILICON PARTICLES FOR USE AS ANODE MATERIAL IN LITHIUM ION RECHARGEABLE BATTERIES, USE OF A ROTATING REACTOR FOR THE METHOD AND PARTICLES PRODUCED BY THE METHOD AND A REACTOR FOR OPERATING THE METHOD
Method for producing silicon particles for use as anode material in lithium ion rechargeable batteries, distinctive by the steps: a)optionally, to introduce silicon seed particles and/or lithium seed particles into, or producing silicon or lithium seed particles or inner core material in a rotatable reactor, as a separate optional step or as included in step b), b)to introduce a silicon-containing first reaction gas for CVD into the reactor, setting the reactor in rotation under CVD-conditions; to grow silicon-rich core particles on the seed particles while the reactor is rotated at a rotational speed creating a centripetal acceleration exceeding at least 1000 times the natural acceleration of gravity on said core particles, c)optionally, to introduce a second reaction gas, liquid or material into the reactor of steps a) and b) or a second reactor into which the core particles of step b) have been introduced; to grow a second material of lower silicon contents than the core material, and the second reaction gas, liquid or material is different from the first reaction gas. The invention also provides silicon particles for use as anode material in lithium ion rechargeable batteries, use of a rotating reactor for the method, and a reactor for operating the method.
The invention relates to a device for processing a sheet of dough (3) in order to reduce the thickness of this, where the device comprises a plurality of roller (7) arranged in series on a roller assembly (17, 17', 22). The invention is distinctive in that each roller (7) is configured to follow a curved path (5, 6, 26) when the roller (7) is in contact with the sheet of dough (3) so that curved structures (10, 11, 13) are created in the sheet of dough (3) after processing. The invention also comprises a method for processing a sheet of dough (3).
The invention provides a reactor for the manufacture of silicon by chemical vapor deposition (CVD), the reactor comprises a reactor body that can rotate around an axis with the help of a rotation device operatively arranged to the reactor, at least one sidewall that surrounds the reactor body, at least one inlet for reaction gas, at least one outlet for residual gas and at least one heat appliance operatively arranged to the reactor. The reactor is characterized in that during operation for the manufacture of silicon by CVD, the reactor comprises a layer of particles on the inside of at least, one sidewall.
The invention provides a reactor for the manufacture of silicon by chemical vapour deposition (CVD), the reactor comprises a reactor body that can rotate around an axis with the help of a rotation device operatively arranged to the reactor, at least one sidewall that surrounds the reactor body, at least one inlet for reaction gas, at least one outlet for residual gas and at least one heat appliance operatively arranged to the reactor. The reactor is characterised in that during operation for the manufacture of silicon by CVD, the reactor comprises a layer of particles on the inside of, at least, one sidewall.
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C23C 16/01 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. on substrates subsequently removed by etching
Reactor for producing silicon by chemical vapor deposition, the reactor comprising a reactor body that forms a container, at least one inlet for a silicon-bearing gas, at least one outlet, and at least one heating device as a part of or operatively arranged to the reactor, distinctive in that at least one main part of the reactor, which part is exposed for silicon-bearing gas and which part is heated for deposition of silicon on said part, is produced from silicon. Method for operation of the reactor.
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
C01B 33/031 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent by decomposition of silicon tetraiodide
C01B 33/033 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Reactor for production of silicon, comprising a reactor volume, distinctive in that the reactor comprises or is operatively arranged to at least one means for setting a silicon-containing reaction gas for chemical vapor deposition (CVD) into rotation inside the reactor volume. Method for production of silicon.
A device for separating the outer slice of silicon or another material from a grouping of one or more outer slices, wherein a layer of fluid is present between the outer slice and the one or 5 more outer slices. The device is characterized in that it comprises a heating device which is placed and dimensioned in such a way that it during operation causes heating to vaporization of at least a part of the said layer of fluid. Thus, the adhesive forces caused by the layer of fluid are eliminated in such a way that the outer slice and succeeding outer slices more easily can be separated and transported to the next step in the production of a finished product. A system and a method employing said device.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Method for transportation of a stack of disk-shaped objects on a conveyor belt, a transportation device or similar, without the objects being internally displaced nor damaged during transportation, distinctive in that a negative pressure is arranged on at least one part of the lateral area of the stack. Device useful for practicing the method.
B65G 49/07 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
Reactor for producing silicon by chemical vapor deposition, the reactor comprising a reactor body that forms a container, at least one inlet for a silicon-bearing gas, at least one outlet, and at least one heating device as a part of or operatively arranged to the reactor, distinctive in that at least one main part of the reactor, which part is exposed for silicon-bearing gas and which part is heated for deposition of silicon on said part, is produced from silicon. Method for operation of the reactor.
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
C01B 33/031 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent by decomposition of silicon tetraiodide
C01B 33/033 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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