An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.
E21B 10/573 - Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element
B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
C04B 35/52 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite
C04B 35/63 - Preparing or treating the powders individually or as batches using additives specially adapted for forming the products
An earth-boring drilling tool comprises a cutting element. The cutting element comprises a substrate, a diamond table, and at least one sensing element formed from a doped diamond material disposed at least partially within the diamond table. A method for determining an at-bit measurement for an earth-boring drill bit comprises receiving an electrical signal generated within a doped diamond material disposed within a diamond table of a cutting element of the earth-boring drill bit, and correlating the electrical signal with at least one parameter during a drilling operation.
E21B 49/00 - Testing the nature of borehole wallsFormation testingMethods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
E21B 47/01 - Devices for supporting measuring instruments on drill bits, pipes, rods or wirelinesProtecting measuring instruments in boreholes against heat, shock, pressure or the like
E21B 10/567 - Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
E21B 10/55 - Drill bits characterised by wear resisting parts, e.g. diamond inserts the bit being of the rotary drag type, e.g. fork-type bits with preformed cutting elements
E21B 44/00 - Automatic control systems specially adapted for drilling operations, i.e. self-operating systems which function to carry out or modify a drilling operation without intervention of a human operator, e.g. computer-controlled drilling systemsSystems specially adapted for monitoring a plurality of drilling variables or conditions
A mechanical drilling and removal tool and method for use in wireline and other operations for drilling through and removing paraffin, scale and other deposits from tubing in oil wells, all without the need for any electrical or hydraulic input to the tool, the tool comprising: (a) a tool body having an outer surface removably engageable with the inner wall of oil well tubing and having a threaded inner surface for receiving a threaded shaft, the outer surface of the tool body being engageable with the inner wall of oil well tubing when a rapid dynamic upward force is applied to the tool body and being disengageable when a steady upward force is applied; (b) a threaded shaft having a head end, a threaded body, and a threaded bit end and having the body threads complementary to the threaded inner surface of the tool body, the shaft being movable longitudinally downward through the tool body when a downward force is applied to the head end while the tool body is engaged with the inner wall of oil well tubing, thereby causing the shaft to rotate within the tool body and causing the threaded bit end to drill into and collect between paddle threads on the bit a deposit disposed below the tool body; and (c) a ratchet, attached to the head end portion of the shaft, to prevent the shaft from rotating when the shaft is moved longitudinally upward, thereby allowing the entire drilling and removal tool, along with the collected deposit, to be removed from the oil well tubing when a steady upward force is applied to the head end of the shaft. The bit can be a separate piece removably connected to the threaded shaft.
A sintered polycrystalline body and a method of forming the sintered polycrystalline body are disclosed. The sintered polycrystalline body comprises a plurality of particles cubic boron nitride dispersed in a matrix. The matrix includes materials selected from compounds of any of titanium and aluminium. The polycrystalline body further comprises 0.1 to 5.0 volume % of lubricating chalcogenide particles dispersed in the matrix. The chalcogenide particles have a coefficient of friction of less than 0.1 with respect to a workpiece material. Preferably sulfide particles are used as lubricant. Preferably 30-70 vol.-% cBN is contained. Sintering takes place at 1100-1600° C. and 4-8 GPa.
C04B 35/58 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides
C04B 35/5831 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on boron nitride based on cubic boron nitride
B22F 3/14 - Both compacting and sintering simultaneously
C04B 35/56 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
C04B 35/63 - Preparing or treating the powders individually or as batches using additives specially adapted for forming the products
B22F 5/00 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
C22C 29/16 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on nitrides
5.
Microwave plasma reactors and substrates for synthetic diamond manufacture
The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C 16/52 - Controlling or regulating the coating process
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness td, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness tsc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ΔTec; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due to the thermal expansion mismatch ΔTec, wherein B, td, tsc, and ΔTec are selected such that the layer of compound semiconductor material contracts on cooling by an amount which off-sets bowing in the bowed substrate thus pulling the bowed composite semiconductor component into a flat configuration, the layer of compound semiconductor material having a tensile stress after cooling of less than 500 MPa.
A microelectrode for electrochemical use is described. The microelectrode comprises: • (a) an electrically non-conductive diamond plate (2) having a first surface (4) containing at least two discrete recesses (16,18) and an opposed second surface (6); • (b) electrically conductive diamond material contained within said recesses and being substantially flush with the first surface of said diamond plate, the electrically conductive diamond material in each of said at least two discrete recesses providing respective working electrodes in use; and • (c) at least two electrically conductive connection members (12) that extend from the second surface of the electrically non-conductive diamond plate into the electrically non-conductive diamond plate, such that each of the connection members is electrically connected to respective ones of the working electrodes.
A microfluidic cell comprising: a microfluidic channel (32) for receiving a fluid sample; and a sensor (30) located adjacent the microfluidic channel; wherein the sensor comprises a diamond material comprising one or more quantum spin defects (34). In use, a fluid sample is loaded into the microfluidic cell and the fluid is analyzed via magnetic resonance using the quantum spin defects.
B24D 99/00 - Subject matter not provided for in other groups of this subclass
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 μm or less;a second layer having a thickness of no less than 0.5 μm and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80°C; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material.
A method of manufacturing a composite substrate for a semiconductor device,the method comprising: selecting a substrate wafer comprising at least a layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon; growing a first polycrystalline diamond layer on the substrate wafer using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via said layer; and removing a portion of the substrate wafer material using an etching technique to form a composite substrate comprising the polycrystalline diamond layer directly bonded to said layer of substrate wafer material, wherein said layer of substrate material has a thickness of no more than 100 μm, wherein the etching technique is configured to preferentially remove the portion of substrate material relative to said layer of substrate wafer material bonded to the polycrystalline diamond layer, said etching technique comprising one or more of: selecting an anisotropic etchant which etches the portion of substrate material at a faster rate than said layer of substrate wafer material bonded to the polycrystalline diamond layer; providing an edge etch stop around edge regions of said layer of substrate wafer material bonded to the polycrystalline diamond layer; and providing a doped, electrically conductive portion of the substrate to be removed and an electrically resistive layer bonded to the polycrystalline diamond layer and removing the doped, electrically conductive portion of the substrate by electrochemical etching or electrochemically assisted etching.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
13.
SINGLE CRYSTAL DIAMOND SUBSTRATES FOR SYNTHESIS OF SINGLE CRYSTAL DIAMOND MATERIAL
A method of growing synthetic single crystal diamond material, the method comprising: providing a single crystal diamond substrate; and growing synthetic single crystal diamond material on said single crystal diamond substrate, wherein said single crystal diamond substrate is formed of single crystal diamond material which is irradiated prior to growing synthetic single crystal diamond material thereon, and wherein the irradiation comprises irradiating the diamond material to a depth of 5 μm or greater.
B01J 3/06 - Processes using ultra-high pressure, e.g. for the formation of diamondsApparatus therefor, e.g. moulds or dies
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
C30B 31/20 - Doping by irradiation with electromagnetic waves or by particle radiation
C30B 25/10 - Heating of the reaction chamber or the substrate
A thin plate of synthetic single crystal diamond material, the thin plate of synthetic single crystal diamond material having: a thickness in a range 100 nm to 50 μιη; a concentration of quantum spin defects greater than 0.1 ppb (parts-per-billion); a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million); and wherein at least one major face of the thin plate of synthetic single crystal diamond material comprises surface termination species which have zero nuclear spin and/or zero electron spin.
G01N 24/10 - Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects by using electron paramagnetic resonance
G01R 33/60 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance using electron paramagnetic resonance
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
G06N 99/00 - Subject matter not provided for in other groups of this subclass
B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
G01R 33/24 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
An electrochemical sensor comprising: a reference electrode (4) formed of an electrically conductive synthetic doped diamond material and configured to be located in electrical contact with a solution (8) to be analysed; a sensing electrode (2) formed of an electrically conductive synthetic doped diamond material and configured to be located in contact with the solution (8) to be analysed; an electrical controller (10) configured to conduct stripping voltammetric measurements by applying a voltage to the sensing electrode (2), to change the applied voltage relative to the reference electrode (4), and to measure an electric current flowing through the sensing electrode (2) thereby generating voltammetry data; and a calibration system configured to provide an in- situ calibration for providing a reference point in the voltammetric data since the potential of the diamond reference electrode is non fixed and floating. Consequently, assigning of peaks (M1, M2, M3) in the voltammetry data to chemical species (M1, M2, M3) is possible, thereby allowing the type and concentration of chemical species in the solution (8) to be determined. The in-situ calibration consists of: 1 - using a spectrometer for X-rays, Gamma rays or fluorescence measurements integrated in the sensor, 2 - using a known redox couple added to the solution that will provide a reference peak in the voltammetric data, or 3 - producing in-situ ionic species at the vicinity of the reference electrode.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 27/42 - Measuring deposition or liberation of materials from an electrolyteCoulometry, i.e. measuring coulomb-equivalent of material in an electrolyte
G01N 27/48 - Systems using polarography, i.e. measuring changes in current under a slowly-varying voltage
16.
ELECTROCHEMICAL DEPOSITION AND SPECTROSCOPIC ANALYSIS METHODS AND APPARATUS USING DIAMOND ELECTRODES
A method of analysing chemical species in a solution, the method comprising: providing an electrochemical deposition apparatus comprising a first electrode (2) formed of an electrically conductive diamond material and a second electrode (4); locating the first electrode in contact with a solution (8) to be analysed and the second electrode in electrical contact with the solution to be analysed; applying a potential difference between the first and second electrodes (2, 4) such that current flows between the first and second electrodes through the solution to be analysed and chemical species are electro - deposited from the solution onto the first electrode; applying a spectroscopic analysis technique to the electro - deposited chemical species (Ml, M2, M3) on the first electrode to generate spectroscopic data about the electro - deposited chemical species on the first electrode; and using the spectroscopic data to determine the type of chemical species electro - deposited on the first electrode. The spectroscopic analysis technique, which can be based on X-rays, fluorescent X-rays or gamma rays, is used in combination with stripping voltammetric measurement performed on the first electrode. The spectroscopic data can also be used in- situ calibration data for calibrating the reference potential used voltammetric measurements.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 27/42 - Measuring deposition or liberation of materials from an electrolyteCoulometry, i.e. measuring coulomb-equivalent of material in an electrolyte
G01N 27/48 - Systems using polarography, i.e. measuring changes in current under a slowly-varying voltage
A synthetic single crystal diamond material comprising: a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μιη which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material.
A single crystal synthetic CVD diamond material comprising: a growth sector; and a plurality of point defects of one or more type within the growth sector, wherein at least one type of point defect is preferentially aligned within the growth sector, wherein at least 60% of said at least one type of point defect shows said preferential alignment, and wherein the at least one type of point defect is a negatively charged nitrogen-vacancy defect (NV-).
A diamond based electrochemical band sensor comprising: a diamond body; and a plurality of boron doped diamond band electrodes disposed within the diamond body, wherein at least a portion of each of the plurality of boron doped diamond band electrodes is doped with boron to a level suitable to achieve metallic conduction, the boron doped diamond electrodes being spaced apart by non-conductive intrinsic layers of diamond, wherein the diamond body comprises a front sensing surface with the plurality of boron doped diamond band electrodes being exposed at said sensing surface and extending in an elongate manner across said surface, and wherein each boron doped diamond electrode has a length/width ratio of at least 10 at the front sensing surface.
The invention relates to a speaker dome comprising: a polycrystalline diamond dome body formed of a material of high stiffness with a Young's modulus greater than 50 GPa and having respective inner and outer surfaces; and a coating on at least one side of the dome body, wherein the coating comprises an optically refractive metal compound layer which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the layer. The invention also relates to a diamond component comprising: a diamond body; and a coating on at least one side of the diamond body, wherein the coating comprises at least two layers including a first layer bonded to the at least one side of the diamond body and a second layer disposed over the first layer, the second layer being an optically refractive metal compound coating which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the second layer.
A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TM011 resonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height / the resonance cavity diameter is in the range 0.3 to 1Ø
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
23.
MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface,the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.
A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber.
A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber (2); a substrate holder (4) disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration (12) for feeding microwaves from a microwave generator (8) into the plasma chamber; and a gas flow system (13,16) for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window (18) formed in one or several sections; a coaxial waveguide (14) having a central inner conductor (20) and an outer conductor (22) for feeding microwaves to the annular dielectric window; and a waveguide plate (24) comprising a plurality of apertures (28) disposed in an annular configuration with a plurality of arms (26) extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
27.
A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TM011 resonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height / the resonance cavity diameter is in the range 0.3 to 1.0.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
28.
A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm2, wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane;and a nozzle area ratio of equal to or greater than 10, whereinthe nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface,the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.
A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.
A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors (8), the microwave power delivery system comprising: a tuner (14) configured to be coupled to a microwave source (4) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction (18) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink (20), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.
Methods and associated tools and components related to generating and obtaining performance data during drilling operations of a subterranean formation is disclosed. Performance data may include thermal and mechanical information related to earth-boring drilling tool during a drilling operation are disclosed. For example, a cutter of an earth-boring drilling tool may include a substrate with a cutting surface thereon. The cutter may further include at least one diamond sensor coupled with the cutting surface, and a conductive pathway operably coupled with the at least one diamond sensor. The at least one diamond sensor may be configured to generate a piezoelectric signal in response to an applied stimulus.
E21B 47/01 - Devices for supporting measuring instruments on drill bits, pipes, rods or wirelinesProtecting measuring instruments in boreholes against heat, shock, pressure or the like
E21B 10/54 - Drill bits characterised by wear resisting parts, e.g. diamond inserts the bit being of the rotary drag type, e.g. fork-type bits
A bipolar cell for a reactor for treatment of electrolyte such as waste water and effluent or for electrosynthesis comprises end electrodes and at least one bipolar electrode therebetween. The or each bipolar electrode comprises a diamond sheet. The cell includes a porous support structure, for example in the formofspacers, a lattice of plastic rods, or a woven mesh, between each end electrode and the adjacent diamond sheet, there being porous support structure between the or each pair of adjacent diamond sheets, the support structures acting to contact or support the or each diamond sheet.
A microfluidic cell comprising: a microfluidic channel (32) for receiving a fluid sample; and a sensor (30) located adjacent the microfluidic channel; wherein the sensor comprises a diamond material comprising one or more quantum spin defects (34). In use, a fluid sample is loaded into the microfluidic cell and the fluid is analysed via magnetic resonance using the quantum spin defects.
A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.
A PCD insert comprises a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.
E21B 10/573 - Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element
C04B 35/52 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbon, e.g. graphite
C04B 35/63 - Preparing or treating the powders individually or as batches using additives specially adapted for forming the products
A method of manufacturing an optical element, the method comprising: growing a first layer of single crystal diamond material via a chemical vapour deposition technique using a gas phase having a first nitrogen concentration; growing a second layer of single crystal diamond material over said first layer via a chemical vapour deposition technique using a gas phase having a second nitrogen concentration, wherein the second nitrogen concentration is lower than the first nitrogen concentration; forming an optical element from at least a portion of the second layer of single crystal diamond material; and forming an out-coupling structure at a surface of the optical element for increasing out-coupling of light.
A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a wafer comprising single crystal silicon or silicon carbide, the wafer having a thickness in a range 0.3 mm to 2.0 mm; growing a polycrystalline diamond layer on the wafer using a chemical vapour deposition technique at a first temperature in a range 700°C to 1200°C to form a composite comprising the wafer bonded to the polycrystalline diamond layer, the polycrystalline diamond layer having a thickness in a range 50 μm to 150 μm; heating or cooling the composite to a second temperature to generate a strain field in the wafer which is sufficient to enable cleavage of the wafer at a distance of 15 μm or less from an interface with the polycrystalline diamond layer while being low enough to avoid the wafer fragmenting and/or the polycrystalline diamond layer cracking; and cleaving the wafer at a distance of 15 μm or less from an interface with the polycrystalline diamond layer to release strain energy and form a composite substrate comprising the polycrystalline diamond layer directly bonded to a cleaved layer comprising single crystal silicon or silicon carbide, the cleaved layer having a thickness of 15 μm or less.
A method comprising: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 1014 to 1 x 1022 vacancies/cm-3
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A method comprising: selecting a diamond material; irradiating the diamond material with neutrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises irradiating the diamond material with neutrons having an energy in the range 1.0 keV to 12 MeV, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 1014 to 1 x 1020 vacancies/cm-3.
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a HPHT diamond material having a total equivalent isolated nitrogen concentration in the range 1 to 600 ppm; a CVD diamond material having a total equivalent isolated nitrogen concentration in the range 0.005 to 100 ppm; and a natural diamond material having a total nitrogen concentration in the range 1 to 2000 ppm, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 1014 to 1 x 1021 vacancies/cm-3
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A microelectrode for electrochemical analysis having an analysis surface which comprises one or more regions of electrically conductive diamond material surrounded by electrically insulating diamond-like carbon material, the diamond-like carbon material having, (a) a hardness lower than that of the electrically conductive diamond material and (b) a resistivity of at least 1 x 109ohm.cm, and the microelectrode being provided with connection means (10) for electrically connecting the one or more regions to an external circuit.
Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at room temperature, is disclosed. Uses of the diamond material, including in a Raman laser, and methods of producing the diamond are also disclosed.
H01S 3/30 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3 : 1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.
A chemical vapour deposition (CVD) method for synthesizing diamond material on a substrate in a synthesis environment, said method comprising: providing the substrate; providing a source gas; dissociating the source gas; and allowing homoepitaxial diamond synthesis on the substrate; wherein the synthesis environment comprises nitrogen at an atomic concentration of from about 0.4 ppm to about 50 ppm; and and wherein the source gas comprises: a) an atomic fraction of hydrogen, II f, from about 0.40 to about 0.75; b) an atomic fraction of carbon, C f, from about 0.15 to about 0.30; c) an atomic fraction of oxygen, O f, from about 0.13 to about 0.40; wherein H f - C f + O f = 1; wherein the ratio of atomic fraction of carbon to the atomic fraction of oxygen, C f:O f, satisfies the ratio of about 0.45: 1 C f:O f < about 1.25: 1; wherein the source gas comprises hydrogen atoms added as hydrogen molecules, H2, at an atomic fraction of the total number of hydrogen, oxygen and carbon atoms present of between 0.05 and 0.40; and wherein the atomic fractions H f, C f and O f are fractions of the total number of hydrogen, oxygen and carbon atoms present in the source gas.
A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3 : 1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.
A chemical vapour deposition (CVD) method for synthesizing diamond material on a substrate in a synthesis environment, said method comprising: providing the substrate; providing a source gas; dissociating the source gas; and allowing homoepitaxial diamond synthesis on the substrate; wherein the synthesis environment comprises nitrogen at an atomic concentration of from about 0.4 ppm to about 50 ppm; and and wherein the source gas comprises: a) an atomic fraction of hydrogen, Hf, from about 0.40 to about 0.75; b) an atomic fraction of carbon, Cf, from about 0.15 to about 0.30; c) an atomic fraction of oxygen, Of, from about 0.13 to about 0.40; wherein Hf + Cf + Of = 1; wherein the ratio of atomic fraction of carbon to the atomic fraction of oxygen, Cf:Of, satisfies the ratio of about 0.45: 1 < Cf:Of < about 1.25: 1; wherein the source gas comprises hydrogen atoms added as hydrogen molecules, H2, at an atomic fraction of the total number of hydrogen, oxygen and carbon atoms present of between 0.05 and 0.40; and wherein the atomic fractions Hf, Cf and Of are fractions of the total number of hydrogen, oxygen and carbon atoms present in the source gas.
A method of introducing NV centres in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centres from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies. Pink CVD diamond material and CVD diamond material with spintronic properties is also described.
Starting from a diamond material which shows a difference in its absorption characteristics after exposure to radiation with an energy of at least 5.5 eV (typically UV radiation) and thermal treatment at 798K, controlled irradiation is applied so as to introduce defects in the diamond material. After the controlled irradiation the difference in the absorption characteristics after exposure to radiation with an energy of at least 5.5 eV and thermal treatment at 798K is reduced. Diamond material with absorption features characteristic of isolated vacancies is also described.
Starting from a diamond material which shows a difference in its absorption characteristics after exposure to radiation with an energy of at least 5.5 eV (typically UV radiation) and thermal treatment at 798K, controlled irradiation is applied so as to introduce defects in the diamond material. After the controlled irradiation the difference in the absorption characteristics after exposure to radiation with an energy of at least 5.5 eV and thermal treatment at 798K is reduced. Diamond material with absorption features characteristic of isolated vacancies is also described.
A method of making fancy orange synthetic CVD diamond material is described. The method comprises irradiating a single crystal diamond material that has been grown by CVD to introduce isolated vacancies into at least part of the CVD diamond material and then annealing the irradiated diamond material to form vacancy chains from at least some of the introduced isolated vacancies. Fancy orange CVD diamond material is also described.
A method of making fancy orange synthetic CVD diamond material is described. The method comprises irradiating a single crystal diamond material that has been grown by CVD to introduce isolated vacancies into at least part of the CVD diamond material and then annealing the irradiated diamond material to form vacancy chains from at least some of the introduced isolated vacancies. Fancy orange CVD diamond material is also described.
A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post- irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT] x L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in colour. Fancy pale blue diamonds are also described.
A method of introducing NV centres in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centres from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies. Pink CVD diamond material and CVD diamond material with spintronic properties is also described.
A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post- irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT] x L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in colour. Fancy pale blue diamonds are also described.
A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilised is described. The growth is effected at a temperature in the range from 1280°C to 1390°C.
A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T2 at room temperature of about 300 μs or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, Rq of the single crystal diamond within an area defined by a circle of radius of about 5 μm centred on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.
Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.
The present invention relates to composite material comprising a layer of diamond material chemically bonded to a surface of a layer of silicon material, wherein the layer of diamond material comprises a mixture of diamond particles, silicon carbide and silicon and methods for producing the same.
A single crystal diamond element having a convex surface is disclosed, the convex surface including a spherical segment for which the maximum peak to valley deviation from a perfect spherical surface is less than about 5 μm. Alternatively or in addition, the RMS deviation from a perfect spherical surface may be less than about 500 nm, or the RMS roughness less than about 30 nm. A single crystal diamond element with a radius of curvature less than about 20 mm is also disclosed. In one aspect a single crystal diamond element having a conical half-angle greater than about 10° is described. The invention also provides a method for forming a rotationally symmetrical surface on a single crystal diamond element, comprising rotating the element about a first axis, applying a laser beam to the element in a direction perpendicular to the first axis, and translating the laser beam in two dimensions in a plane perpendicular to the direction of the beam. If the two-dimensional path follows the arc of a circle a spherical surface may be formed. The invention also provides improving a spherical surface on a single crystal diamond element by pressing a rapidly rotating cup onto a slowly rotating element. The element may be a lens, in particular a solid immersion lens.
B32B 3/00 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form
The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilised. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a ឬ100ᡶ or ឬ110ᡶ direction in the plane of the growth surface.
The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
64.
DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE
The present invention relates to a diamond electronic device comprising a functional surface formed by a planar surface of a single crystal diamond, the planar surface of the single crystal diamond having an Rq of less than 10 nm and at least one of the following characteristics: (a) the surface has not been mechanically processed since formation by synthesis; (b) the surface is an etched surface; (c) a density of dislocations in the diamond breaking the surface is less than 400 cm'2 measured over an area greater than 0.014 cm2; (d) the surface has an Rq less than 1 nm; (e) the surface has regions with a layer of charge carriers immediately below it, such that the regions of the surface are normally termed conductive, such as a hydrogen terminated {100} diamond surface region; (f) the surface has regions with no layer of charge carriers immediately below it, such that these regions of the surface are normally termed insulating, such as an oxygen terminated {100} diamond surface; and (g) the surface has one or more regions of metallization providing electrical contact to the diamond surface beneath these regions.
The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.
Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention relates to a diamond electronic device comprising a functional interface between two solid materials, wherein the interface is formed by a planar first surface of a first layer of single crystal diamond and a second layer formed on the first surface of the first diamond layer, the second layer being solid, non-metallic and selected from diamond, a polar material and a dielectric material, and wherein the planar first surface of the first layer of single crystal diamond has an Rq of less than 10 nm and has at least one of the following characteristics: (a) the first surface is an etched surface; (b) a density of dislocations in the first diamond layer breaking the first surface is less than 400 cm-2 measured over an area greater than 0.014 cm2; (c) a density of dislocations in the second layer breaking a notional or real surface lying within the second layer parallel to the interface and within 50 μm of the interface is less than 400 cm-2 measured over an area greater than 0.014 cm2; and (d) the first surface has an Rq less than 1 nm.
POLYCRYSTALLINE DIAMOND ELEMENTS HAVING CONVEX SURFACES; METHOD OP CUTTING A ROTATIONAL SYMMETRICAL SURFACE OF A DIAMOND ELEMENT USING A LASER; METHOD OF POLISHING A SPHERICAL SURFACE OF A POLYCRYSTALLINE OR COATED DIAMOND ELEMENT
A diamond element (10) having a convex surface is disclosed, the convex surface including a spherical segment for which the maximum peak to valley deviation from a perfect spherical surface is less, than about 5um. The diamond element (10) may be a solid polycrystalline diamond material and/or may comprise base material which is coated with diamond. Alternatively or in addition, the RMS deviation from a perfect spherical surface may be less than about 500 nm, or the RMS roughness less than about 30 nm. A diamond element (10) with a radius of curvature less than about 20 mm is also disclosed. In one aspect a diamond element (10) having a conical half- angle greater than about 10° is described. Diamond elements (10) of this type are intended for use as metrology tips. Key to this invention is the realization that a diamond surface, particularly a diamond surface with low Ra (roughness) and which is free of defects such as pits, digs and scratches, accumulates less material from the surface being measured, and thus provides a longer life.
B24B 9/16 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of diamonds, of jewels or the likeDiamond grinders' dopsDop holders or tongs
B24B 13/02 - Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other workAccessories therefor by means of tools with abrading surfaces corresponding in shape with the lenses to be made
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
A rigid three-dimensional component such as a speaker dome is formed of diamond, preferably fabricated to net shape by CVD diamond synthesis, and includes a coating on one or more major surfaces thereof. The coating is designed to enhance the performance and/or to alter the appearance of the component. In particular, the coating is designed to act as a damping medium and/or provide aesthetic qualities to the component.
H04R 7/00 - Diaphragms for electromechanical transducersCones
B21C 37/00 - Manufacture of metal sheets, rods, wire, tubes, profiles or like semi-manufactured products, not otherwise provided forManufacture of tubes of special shape
An electrode comprising an electrically conducting diamond plate (4) wherein the diamond plate (4) comprises at least one elongate aperture (2) and having an aperture edge length per unit working area of the diamond plate of greater than about 4 mm/mm2. Electrolysis cells comprising such electrodes, method of treating water using such electrolysis cells and a method of production of ozone are also disclosed.
The present invention provides an electrochemical apparatus for processing a fluid comprising: an electrode; a solid electrolyte; and means for providing forced flow through the apparatus of a fluid to be processed, wherein the apparatus is arranged such that when the fluid to be processed is introduced into the apparatus there exists at least one three phase interface between the electrode, the solid electrolyte and the fluid to be processed and such that the fluid forming part of the three phase interface undergoes forced flow through the apparatus, and methods in which the electrochemical apparatus is used for the production of ozone.
The present invention provides a solid diamond electrode, a reactor (20), in particular a reactor comprising an anode (30), a cathode (32) and at least one bipolar electrode (26) having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode (26) consists essentially of diamond, and methods in which the reactors are used.
Microelectrode comprising a body formed from electrically non-conducting material and including at least one region of electrically conducting material and at least one passage extending through the body of non-conducting material and the region of conducting material, the electrically conducting region presenting an area of electrically conducting material to a fluid flowing through the passage in use. An electrochemical cell which includes such a microelectrode is also disclosed.
A body of single crystal CVD (chemical vapour deposition) diamond particularly suitable as a wear resistant material for wear applications, such as wire drawing dies, graphical tools or stichels, or fluid jet nozzles. The diamond typically has a low wear rate, exhibits a low birefringence indicative of low strain and possesses an ability to be processed to show a high surface polish.
B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
B32B 27/20 - Layered products essentially comprising synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
A microelectrode comprising a diamond layer formed from electrically non-conducting diamond and containing one or more pins or projections of electrically conducting diamond extending at least partially through the layer of non-conducting diamond and presenting areas of electrically conducting diamond.
G01N 27/26 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variablesInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by using electrolysis or electrophoresis
A single crystal diamond element having a convex surface is disclosed, the convex surface including a spherical segment for which the maximum peak to valley deviation from a perfect spherical surface is less than about 5 쎽m. Alternatively or in addition, the RMS deviation from a perfect spherical surface may be less than about 500 nm, or the RMS roughness less than about 30 nm. A single crystal diamond element with a radius of curvature less than about 20 mm is also disclosed. In one aspect a single crystal diamond element having a conical half-angle greater than about 10° is described. The invention also provides a method for forming a rotationally symmetrical surface on a single crystal diamond element, comprising rotating the element about a first axis, applying a laser beam to the element in a direction perpendicular to the first axis, and translating the laser beam in two dimensions in a plane perpendicular to the direction of the beam. If the two-dimensional path follows the arc of a circle a spherical surface may be formed. The invention also provides improving a spherical surface on a single crystal diamond element by pressing a rapidly rotating cup onto a slowly rotating element. The element may be a lens, in particular a solid immersion lens.
G02B 1/02 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of crystals, e.g. rock-salt, semiconductors
A method of producing a CVD diamond layer having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.
A method of producing a CVD diamond layer having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.
A method of manufacturing a transistor, typically a MESFET, includes providing a substrate comprising single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean- square roughness of 3nm or less, or is free of steps or protrusions larger than 3nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. In one embodiment of the method, a layer of intrinsic diamond is formed directly on the upper surface of the high purity layer, followed by a boron doped ('delta doped') layer. A trench is formed in the delta doped layer to define a gate region.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis, growing a layer of CVD diamond of predetermined thickness and having a growth face onto the first surface of the silicon wafer, reducing the thickness of the silicon wafer to a predetermined level, and providing a second surface on the silicon wafer that is suitable for further synthesis of at least one semiconductor layer suitable for use in electronic devices or synthesis of electronic devices on the second surface itself and to a substrate suitable for GaN device growth consisting of a CVD diamond layer intimately attached to a silicon surface.
A method of incorporating a mark of origin, such as a brand mark, or fingerprint in a CVD single crystal diamond material, includes the steps of providing a diamond substrate, providing a source gas, dissociating the source gas thereby allowing homoepitaxial diamond growth, and introducing in a controlled manner a dopant into the source gas in order to produce the mark of origin or fingerprint in the synthetic diamond material. The dopant is selected such that the mark of origin or fingerprint is not readily detectable or does not affect the perceived quality of the diamond material under normal viewing conditions, but which mark of origin or fingerprint is detectable or rendered detectable under specialised conditions, such as when exposed to light or radiation of a specified wavelength, for example. Detection of the mark of origin or fingerprint may be visual detection or detection using specific optical instrumentation, for example.
patents
