A light-emitting diode, includes a semiconductor stack having a first semiconductor layer, an active region, a second semiconductor layer and a first recess formed in the semiconductor stack, wherein the first recess includes a side wall and a bottom, and wherein the side wall includes side walls of the second semiconductor layer and the active region and the bottom includes an upper surface of the first semiconductor layer; a conductive layer, disposed on the semiconductor stack and electrically connecting the second semiconductor layer; an insulating layer, formed on the conductive layer, including: a first opening on the second semiconductor layer and surrounding the first recess in a plan view; and a first insulating island covering the first recess and on the conductive layer; a first electrode, formed on the insulating layer and electrically connected to the first semiconductor layer; and a second electrode, formed on the insulating layer and connected to the conductive layer through the first opening.
The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
3.
LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
A method of manufacturing a light-emitting element, includes: providing a base having an upper surface and a lower surface; forming a semiconductor stack on the upper surface; removing part of the semiconductor stack to form a pre-defined dicing region surrounding the semiconductor stack; forming a dielectric stack covering the semiconductor stack and the pre-defined dicing region; and applying a first laser having a first wavelength to irradiate the base along the pre-defined dicing region; wherein the dielectric stack has a reflectance of 10%-50% and/or a transmittance of 50%-90% for the first wavelength.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
4.
OPTICAL SENSING DEVICE AND OPTICAL SENSING SYSTEM THEREOF
This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
A61B 5/021 - Measuring pressure in heart or blood vessels
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
A light-emitting device, includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, comprising a second core region under the second pad electrode and an extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the second core region; wherein in a top view, a contour of the second pad electrode has a circular shape and a contour of the second core region has a shape which is different from the circular shape and selected from square, rectangle, rounded rectangle, rhombus, trapezoid and polygon.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Yenrich Technology Corporation (Taiwan, Province of China)
Inventor
Hsieh, Min-Hsun
Liu, Hsin-Mao
Huang, Li-Yuan
Wang, Tzu-Hsiang
Pu, Chi-Chih
Lin, Ya-Wen
Chiu, Hsiao-Pei
Li, Pei-Yu
Abstract
A light-emitting device includes a first carrier, which includes a side surface between a first surface and a second surface, upper conductive pads on the first surface, and lower conductive pads under the second surface; a RDL pixel package includes a RDL which includes bonding pads and bottom electrodes, and the light-emitting units on the RDL, and connected to the bonding pads. A light-transmitting layer on the RDL and covers the light-emitting units, an upper surface, a lower surface, and a lateral surface between the upper surface and the lower surface. The RDL pixel package is on the first surface and electrically connected to the upper conductive pads. A protective layer covers the first surface and contacting the side surface of the RDL pixel package. The lower electrodes and the upper conductive pads are connected, and the distance between two adjacent bonding pads is less than 30 μm.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
The present disclosure provides a semiconductor device. The semiconductor device includes an epitaxial stack including a mesa region and a lower region; a first pad on the lower region and a second pad on the mesa region; a first contact between the epitaxial stack and the first pad; a passivation structure covering the epitaxial stack and including a first opening; and a first metal structure in the first opening and disposed between the first contact and the first pad; wherein the first metal structure includes a first top surface away from the epitaxial stack, and the passivation structure including a second top surface at a position corresponding to the lower region and away from the epitaxial stack, and a first height difference between the first top surface and the second top surface is less than 3 μm and larger than zero; and wherein the first metal structure includes a first width adjacent to the first contact and a second width adjacent to the first pad, and the second width is larger than the first width.
The present disclosure provides a wavelength conversion structure, a light-emitting apparatus, and a display device using the wavelength conversion structures. The wavelength conversion structure includes a porous inorganic shell and a plurality of organic complex phosphor particles filled in the porous inorganic shell. Wherein the plurality of organic complex phosphor particles is capable of being excited to emit light with a peak wavelength in the visible light range.
NATIONAL TSTNG HUA UNIVERSITY (Taiwan, Province of China)
Inventor
Wu, Meng-Chyi
Liao, Jyun-Hao
Wang, Hsiang-Hui
Abstract
A light conversion device includes a light-emitting unit, a photoelectric conversion unit, and an electroconductive bonding layer. Each of the light-emitting unit and the photoelectric conversion unit includes a first-type region and a second-type region opposite to the first-type region. The electroconductive bonding layer is disposed between the light-emitting unit and the photoelectric conversion unit for connecting the photoelectric conversion unit with the light-emitting unit. When the light conversion device is operated to receive a bias and an external light, the light-emitting unit generates a modulated light having a frequency different from that of the external light.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/00 - Details of semiconductor or other solid state devices
A semiconductor light-emitting device includes: a substrate; a semiconductor stack on the substrate including a first semiconductor contact layer including an upper surface; a light-emitting stack including an active layer on the upper surface; a second semiconductor contact layer on the light-emitting stack; and a recessed region including part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on the substrate and the light-emitting stack; and a first and a second electrode pad on the substrate and electrically connected to the first semiconductor contact layer and the transparent electrode via first and second openings of the protective layer. A ratio of an area of the substrate to an area of the transparent electrode ranges from 2 to 100. A ratio of an operating current of the semiconductor light-emitting device to the area of the transparent electrode ranges from 10 mA/mm2 to 1000 mA/mm2.
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
A measurement apparatus for gas sensor includes a wafer-holding module and a vacuuming module. The wafer-holding module includes a holding carrier configured to hold a wafer. The holding carrier includes an uppermost surface, a bottommost surface, an outermost side surface between the uppermost surface and the bottommost surface, a plurality of grooves, and a plurality of through holes. The vacuuming module couples to the plurality of through holes and is configured to generate a negative pressure to attach the gas-sensing cell to the holding carrier. The wafer includes at least one uncut gas-sensing cell. At least one gas-sensing cell has a cavity located right above at least one of the grooves. The grooves extend downwardly from the uppermost surface and not reaching the bottommost surface. The grooves extend outwardly in a horizontal direction to expose out of the outermost side surface.
An embodiment of the invention discloses an optoelectronic system comprising a plurality of optoelectronic elements, wherein each of the plurality of optoelectronic elements comprises a semiconductor epitaxial layer, a first electrode, a second electrode, a top surface, a bottom surface, and a plurality of lateral surfaces arranged between the top surface and the bottom surface; a layer covering the plurality of lateral surfaces and comprising a side surface; and a reflecting structure having a shape of pyramid, formed between two adjacent optoelectronic elements of the plurality of optoelectronic elements and electrically separated from the plurality of optoelectronic elements, wherein the reflecting structure is configured to reflect light from the two adjacent optoelectronic elements upwards to leave the optoelectronic system.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/56 - Materials, e.g. epoxy or silicone resin
14.
LIGHT EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF
A light-emitting apparatus comprises a board having a plurality of conductive channels penetrating thereof; a plurality of light emitting units for emitting different color lights, disposed on the board and electrically connected to the plurality of conductive channels; and an opaque layer arranged on the board for preventing the plurality of light emitting units from crosstalk, and comprising a plurality of holes for exposing and separating the plurality of light emitting units in a top view.
A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/023 - Mount members, e.g. sub-mount members
NATIONAL TSING HUA UNIVERSITY (Taiwan, Province of China)
EPISTAR CORPORATION (Taiwan, Province of China)
Inventor
Wu, Meng-Chyi
Liao, Jyun-Hao
Wang, Hsiang-Hui
Abstract
A light conversion device includes a light-emitting unit, a photoelectric conversion unit, and an electroconductive bonding layer. Each of the light-emitting unit and the photoelectric conversion unit includes a first-type region and a second-type region opposite to the first-type region. The electroconductive bonding layer is disposed between the light-emitting unit and the photoelectric conversion unit for connecting the photoelectric conversion unit with the light-emitting unit. When the photoelectric conversion device is operated to receive a bias and an external light, the light-emitting unit generates a modulated light different from the external light in frequency.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/00 - Details of semiconductor or other solid state devices
17.
Heterogeneously integrated semiconductor device and manufacturing method thereof
National Applied Research Laboratories (Taiwan, Province of China)
EPISTAR Corporation (Taiwan, Province of China)
Inventor
Chang, Shih-Pang
Luo, Guang-Li
Chen, Szu-Hung
Yeh, Wen-Kuan
Chyi, Jen-Inn
Chen, Meng-Yang
Lee, Rong-Ren
Lee, Shih-Chang
Hsu, Ta-Cheng
Abstract
A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
A light emitting device includes a light-emitting chip; a first light-transmitting layer formed on the light-emitting chip and has two side surfaces; and a first reflective layer formed on the light transmitting layer and extends beyond the two side surfaces of the light-transmitting layer.
x interlayer together, to form a GaN-based semiconductor power device. The GaN buffer layer is capable of achieving sufficient thickness for higher performance. The engineered substrate structure has a core region made of an aluminum nitride (AlN) substrate, a single crystal silicon layer as top material layer thereof, and bonded together with an encapsulated multi-layered structure containing adhesive layers, thin film layers and the AlN substrate. Higher breakdown voltage and improved overall device quality with respect to epitaxy-induced bow, warp, and cracking issues are achieved by the semiconductor power device.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Disclosed are a light-emitting device for digital control of color temperature modulation and its application. The light-emitting device is electrically connected to a wall switch and includes a DIP switch, first LEDs, second LEDs and a control module. The control module is electrically connected to the above components and contains a truth table. The truth table includes at least a first mode, second mode, third mode and a memory and automatically switch mode, and a digital switching is accomplished by correlating the DIP switch to the truth table. In the memory and automatically switch mode, the first to third mode color temperatures are sequentially switched and controlled by turning on or off the wall switch according to the truth table information. The light-emitting device may be applied to light fixtures or mirror products to improve the convenience of use.
National Applied Research Laboratories (Taiwan, Province of China)
EPISTAR Corporation (Taiwan, Province of China)
Inventor
Chang, Shih-Pang
Luo, Guang-Li
Chen, Szu-Hung
Yeh, Wen-Kuan
Chyi, Jen-Inn
Chen, Meng-Yang
Lee, Rong-Ren
Lee, Shih-Chang
Hsu, Ta-Cheng
Abstract
A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
The light fixture includes a frame configured to define a channel, and a substantially flat light emitting diode (LED) panel disposed within the frame. Power circuitry is disposed within the first channel, the power circuitry being configured to electrically couple the substantially flat LED panel to an external AC power supply. The power circuitry is sized to be positioned within the first channel and has a length and a width, the length-to-width ratio being at least 5 to 1, and optionally at least 10 to 1. The power circuitry is configured to convert an AC input into a DC output suitable for powering the substantially flat light emitting diode (LED) panel. The substantially flat light emitting diode (LED) panel includes an optically transmissive panel, and an array of LEDs disposed adjacent to an edge of the optically transmissive panel and disposed adjacent at least one edge of the frame.
F21V 21/00 - Supporting, suspending, or attaching arrangements for lighting devicesHand grips
F21V 23/02 - Arrangement of electric circuit elements in or on lighting devices the elements being transformers or impedances
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
F21S 8/04 - Lighting devices intended for fixed installation intended only for mounting on a ceiling or like overhead structure
F21V 15/01 - Housings, e.g. material or assembling of housing parts
F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
F21V 21/005 - Supporting, suspending, or attaching arrangements for lighting devicesHand grips for several lighting devices in an end-to-end arrangement, i.e. light tracks
F21V 23/06 - Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices
F21V 21/02 - Wall, ceiling, or floor basesFixing pendants or arms to the bases
F21K 9/20 - Light sources comprising attachment means
F21K 9/61 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21K 9/278 - Arrangement or mounting of circuit elements integrated in the light source
F21K 9/275 - Details of bases or housings, i.e. the parts between the light-generating element and the end capsArrangement of components within bases or housings
F21K 9/235 - Details of bases or caps, i.e. the parts that connect the light source to a fittingArrangement of components within bases or caps
National Applied Research Laboratories (Taiwan, Province of China)
EPISTAR Corporation (Taiwan, Province of China)
Inventor
Chang, Shih-Pang
Luo, Guang-Li
Chen, Szu-Hung
Yeh, Wen-Kuan
Chyi, Jen-Inn
Chen, Meng-Yang
Lee, Rong-Ren
Lee, Shih-Chang
Hsu, Ta-Cheng
Abstract
A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (CB) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer; etching the transparent conductive layer and exposing a reserved region for a first pad electrode and a mesa structure, respectively; and etching an exposed portion of the light emitting stacked layers and a portion of the current blocking layer to form a remaining current blocking layer, the mesa structure and a first opening.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
The light fixture includes a frame, a substantially flat light emitting diode (LED) panel disposed within the frame, power circuitry disposed within at least one of a number of channels within the frame, and a central wire-way. The frame includes a bottom assembly and a top assembly coupled to the bottom assembly. The bottom assembly and the top assembly cooperate to form the channels within the frame. The bottom assembly has a back surface. The power circuitry is configured to electrically couple the substantially flat LED panel to an external AC power supply. The central wire-way is disposed adjacent the back surface of the bottom assembly and configured to route wiring to or from the power circuitry disposed within at least one of the channels within the frame.
F21V 23/02 - Arrangement of electric circuit elements in or on lighting devices the elements being transformers or impedances
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
F21S 8/04 - Lighting devices intended for fixed installation intended only for mounting on a ceiling or like overhead structure
F21V 15/01 - Housings, e.g. material or assembling of housing parts
F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
F21V 21/005 - Supporting, suspending, or attaching arrangements for lighting devicesHand grips for several lighting devices in an end-to-end arrangement, i.e. light tracks
F21V 23/06 - Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices
F21V 21/02 - Wall, ceiling, or floor basesFixing pendants or arms to the bases
F21K 9/20 - Light sources comprising attachment means
F21K 9/61 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21K 9/278 - Arrangement or mounting of circuit elements integrated in the light source
F21K 9/275 - Details of bases or housings, i.e. the parts between the light-generating element and the end capsArrangement of components within bases or housings
F21K 9/235 - Details of bases or caps, i.e. the parts that connect the light source to a fittingArrangement of components within bases or caps
A light emitting device, includes a substrate; a plurality of light emitting stacked layers, comprising a first surface and a second surface; a mesa structure; a current blocking (CB) layer; a transparent conductive layer; a first pad electrode and a second pad electrode; and a passivation layer, wherein the second surface is electrically opposite to the first surface, the transparent conductive layer is disposed on or above the first surface, the first pad electrode is disposed on the transparent conductive layer and on the first surface, and the second pad electrode is disposed on the second surface and on the mesa structure, the CB layer is disposed on the first surface, surrounded by the transparent conductive layer, and at a lower region of the first pad electrode, a portion of the first pad electrode is filling a first opening of the transparent conductive layer and the CB layer.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
28.
Secondary-side bucking and current-stabilizing flyback power converter
A secondary-side bucking and current-stabilizing flyback power converter adopts a dual-stage isolated circuit architecture and outputs a constant output current to drive a low-power LED module, and its primary stage adopts a flyback circuit architecture with a primary regulated voltage, and its secondary stage adopts of a buck circuit architecture of the current stabilizer, so that after the primary stage converts the constant voltage, the current stabilizer senses the load effect of the output current at the LED module to regulate the output cycle and maintain the total output of the output current constant and reduce the ripple amplitude, so as to achieve a non-strobe output result and improve the illumination effect of the LED module.
Disclosed are an LED light emitting device and its manufacturing method. A blue LED chip specification is selected, a green phosphor and the blue LED chip are used to determine a green light frame on the CIE1931 chromaticity coordinates and a red phosphor together with a blue LED chip are used to determine a red light frame on the CIE1931 chromaticity coordinates, and a predetermined straight line passing through the color temperature target frame is selected, and both end points of the predetermined straight line fall within the green light frame and the red light frame, so as to determine the concentration of the green phosphor and the red phosphor, and the green and red phosphors and a blue LED chip are packaged to form a first LED and a second LED, and at least one first LED and at least one second LED are installed on a substrate.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
A heterostructure device includes a channel layer, a barrier layer disposed on the channel layer, and a first electrode and a second electrode disposed on the barrier layer, respectively. The second electrode includes a p-type semiconductor structure and a raised section disposed on the p-type semiconductor structure, the second electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface of the p-type semiconductor structure and a first bottom surface of the raised section, the ohmic contact is formed between a second bottom surface of the raised section and the barrier layer.
H01L 21/283 - Deposition of conductive or insulating materials for electrodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal reflective layer, and thus enhancing the light-emitting efficiency of the LED.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Heterostructure field-effect transistor (HFET) having a channel layer, a barrier layer disposed on the channel layer, and a gate, source and drain electrodes disposed on the barrier layer, respectively, and corresponding fabrication methods are disclosed. The drain electrode includes a p-type semiconductor patterned structure and a raised drain section, the drain electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface together with a side surface of p-type semiconductor patterned structure and a bottom surface together with a side surface of raised drain section, the ohmic contact is formed between another surface of raised drain section and barrier layer, the raised drain section partially surrounding the p-type semiconductor patterned structure, and a bandgap of the channel layer is less than a bandgap of the barrier layer.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/283 - Deposition of conductive or insulating materials for electrodes
H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
An automatically controlled directional speaker includes a sound amplifying device, an image capture device, a computing device, an azimuth control motor and an amplitude control unit. The image capture device is provided for detecting the status of surrounding environment to generate image information, and the computing device is communicatively coupled to the image capture device for determining whether there is at least one face information in the image information, and the azimuth control motor is coupled to the sound amplifying device for controlling the azimuth of an output sound of the sound amplifying device according to the face information, and the amplitude control unit is communicatively coupled to the sound amplifying device for controlling the volume of the output sound of the sound amplifying device according to the face information. The speaker may be combined with a lamp to form an LED lamp with broadcasting and illumination functions.
H03G 3/00 - Gain control in amplifiers or frequency changers
H04R 1/34 - Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by using a single transducer with sound reflecting, diffracting, directing or guiding means
An LED panel light fixture and method for assembling the same includes (a) selecting a set of specifications of the LED panel light fixture, the set of specifications comprising a fixture/base specification comprising a form factor of the LED panel light fixture; and a top specification comprising a visual feature of a top in accordance with the top specification; (b) providing a knock-down kit having parts including the top in accordance with the top specification, a frame in accordance with the fixture/base specification, an optically transmissive panel assembly, a set of light emitting diodes (LEDs), and driving circuitry; and (c) assembling the LED panel light fixture using parts of the knock-down kit. An LED panel lighting fixture kit includes a top and a base. The base includes a mounting mechanism that is accessible before joining the top to the base, but not accessible after joining the top to the base.
F21K 9/275 - Details of bases or housings, i.e. the parts between the light-generating element and the end capsArrangement of components within bases or housings
F21S 8/02 - Lighting devices intended for fixed installation of recess-mounted type, e.g. downlighters
F21S 8/04 - Lighting devices intended for fixed installation intended only for mounting on a ceiling or like overhead structure
F21V 15/01 - Housings, e.g. material or assembling of housing parts
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
F21K 9/278 - Arrangement or mounting of circuit elements integrated in the light source
F21V 17/12 - Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening by screwing
F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
F21V 23/04 - Arrangement of electric circuit elements in or on lighting devices the elements being switches
F21V 23/06 - Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices
An auto-sensing dimming lamp guides ambient light to a sensor installed in a lamp cover and at a base through a light pipe. The auto-sensing dimming lamp automatically adjusts a light emission status of LED light sources according to the ambient light by a processor installed at the base. The processor includes a pass filter unit and a modulation unit, and the pass filter unit receives a detected signal waveform of the sensor and a driving voltage waveform of the LED light sources.
An axially symmetric LED light bulb includes a lamp shade, a substrate and a connecting seat. The substrate installed on the connecting seat includes plural LED light sources. The lamp shade has an edge connected to the connecting seat, and the substrate is covered inside the lamp shade. The lamp shade has an unequal thickness with a thicker top and thinner sides. The axially symmetric LED light bulb provides excellent light uniformity and wide-angle illumination.
F21K 99/00 - Subject matter not provided for in other groups of this subclass
F21V 19/00 - Fastening of light sources or lamp holders
F21V 3/04 - GlobesBowlsCover glasses characterised by materials, surface treatments or coatings
F21V 3/02 - GlobesBowlsCover glasses characterised by the shape
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21K 9/66 - Details of globes or covers forming part of the light source
A light emitting device includes a base, a first light emitting unit, a second light emitting unit, a light conversion layer and a lens. The base has a first side slot, a second side slot, and a central slot separated from the first side slot and the second side slot, and the first side slot is formed in a separated recess configuration with a long axis and a short axis. The first light emitting unit is installed in the central slot, and the second light emitting unit is installed in the first side slot. The light conversion layer is covered onto the first light emitting unit or the second light emitting unit, and the lens covers the light conversion layer, the central slot, the first side slot, and the second side slot. The first slot and the lens have first similar contour lines in a top view.
F21V 33/00 - Structural combinations of lighting devices with other articles, not otherwise provided for
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
F21K 9/00 - Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
F21V 5/04 - Refractors for light sources of lens shape
F21Y 105/12 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
F21Y 105/10 - Planar light sources comprising a two-dimensional array of point-like light-generating elements
An LED spherical lamp includes a base, a power supply unit, a substrate and a cover. The power supply unit is installed inside the base, and the substrate has plural LED light emitting elements and is coupled to a side of the base, and the cover is fixed to the base for covering the substrate. The LED spherical lamp includes an electrical connector installed to the substrate and having a plurality of electrical terminals for electrically connecting the substrate to the power supply unit, and an engaging slot is concavely formed on a side of the electrical connector, such that the power supply unit drives the LED light emitting elements to achieve the lighting effect. The LED spherical lamp has the effects of simplifying the assembling and manufacturing procedure, assuring the electrical conduction of components, and facilitating the maintenance, repair, and replacement of the components.
F21S 4/00 - Lighting devices or systems using a string or strip of light sources
F21K 9/278 - Arrangement or mounting of circuit elements integrated in the light source
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
H01R 33/945 - Holders with built-in electrical component
F21V 23/06 - Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices
F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
H01R 33/76 - Holders with sockets, clips or analogous contacts, adapted for axially-sliding engagement with parallely-arranged pins, blades, or analogous contacts on counterpart, e.g. electronic tube socket
43.
Linear dimming LED driver circuit capable of adjusting color temperature
A linear dimming LED driver circuit capable of adjusting color temperature used in a lamp of a down light or a tube light to drive a plurality of LED strings to emit light and the LED strings are formed by yellow-light and ultra blue LEDs. The circuit uses a switch to switch the conduction of the LED strings to change the color temperature of the light emission of the lamp, so that the control module will adjust the light emitting brightness of the lamp for better dimming range and work performance of the whole circuit if a driving voltage is in a mono sinusoidal voltage section greater than or equal to 129 volts and smaller than or equal to 135 volts.
An intelligent wireless doorbell alarm system driven and set by a wireless communication protocol includes at least one doorbell switch, plural lamps and an electronic device. The doorbell switch has a wireless signal module for generating a startup signal after the being triggered. The lamps are electrically coupled to one another. Each lamp has a wireless transmission module and a driving module and is electrically coupled to the doorbell switch for receiving the startup signal. The electronic device is electrically coupled to the lamps and has a setup module for setting the lamps.
G08B 5/36 - Visible signalling systems, e.g. personal calling systems, remote indication of seats occupied using electric transmissionVisible signalling systems, e.g. personal calling systems, remote indication of seats occupied using electromagnetic transmission using visible light sources
A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G01D 5/34 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
G01J 3/46 - Measurement of colourColour measuring devices, e.g. colorimeters
G01J 3/50 - Measurement of colourColour measuring devices, e.g. colorimeters using electric radiation detectors
An LED structure is applied to a backlight source to set a white light of a backlight module at a standard D65 position of the CIE1931 chromaticity coordinates and used together with a display module. A red phosphor for emitting a red light, a yellow phosphor for emitting a yellow light, and a blue light LED chip are provided. The mixing ratio of the red phosphor to the yellow phosphor is controlled within a range of (2.33−1):1, so that the original LED white light falls within a region enclosed by ccy≦1.8*ccx−0.12, ccy≧1.8*ccx−0.336, ccy≦0.33 and ccy≧0.15 of the CIE1931 coordinates. Since the red phosphor does not absorb or convert yellow light, the brightness loss of the yellow light that excites the yellow phosphor is minimized. A color filter may be installed to achieve better NTSC effect and luminous efficacy.
A self-excited TRIAC dimming circuit applied in a panel light includes a dimming module and at least one conversion module, and a power factor controller (PFC) is installed in the dimming module, and the conversion module is a self-excited electronic isolation transformer, and the TRIAC PFC is integrated with the circuit structure of a self-excited electronic transformer to improve the overall circuit stability, so that the panel light complies with a high safety standard to enhance product applicability and competitiveness.
Disclosed is a purely resistive dimming circuit for driving LEDs to emit light and support an LED dimming function. The LEDs are divided into a first string and a second string connected in series with each other. The purely resistive dimming circuit is respectively and electrically coupled to an anode terminal of the first string and an anode terminal of the second string by a driving resistor and a current limiting resistor which are connected in series with each other. The resistance of the driving resistor restricts the LEDs to emit light at different stages to enhance the working efficiency of circuits, while using the property of the current limiting resistor to limit the overvoltage current, so as to achieve a constant power operating effect.
A driver circuit adopting a primary side regulating architecture and an isolation transformer for improving LED flickers includes a transformer, a primary side regulating module, a feedback portion, a driving module and a dimming portion. The transformer includes an input coil, an auxiliary coil, a driving coil, and a dimming coil. The primary side regulating module is electrically coupled to the input coil; the feedback portion is electrically coupled to the auxiliary coil and the primary side regulating module; the driving module is electrically coupled to the driving coil; the dimming portion is electrically coupled to the dimming coil and the driving module. When a dimming signal inputted to the dimming portion has a voltage of 1V-10V, and the driver circuit is applied to a panel light, the LED flicker is improved effectively.
H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
H05B 41/282 - Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters with semiconductor devices
A light source device including a light emitting diode (LED) chip and a molding lens is provided. The molding lens is directly formed on the LED chip and includes a center of a bottom where the LED chip located at and a light exiting surface formed corresponding to the center. The light exiting surface comprises a concave portion, a first light exiting region surrounding the concave portion and a second light exiting region surrounding the first light exiting region. The first light exiting region connects between the concave portion and the second light exiting region.
An LED driver circuit for supplying a TRIAC holding current by using a controllable current source has a single-stage power factor correction circuit architecture, and the circuit receives an input voltage received by a conversion module of the controllable current source to form an operating current for driving an LED light source to emit light and monitoring the change of the input voltage by a control chip, and adopts a switching method of a fixed cut-off time of a switch unit, so that the controllable current source outputs a constant operating current in a standard peak value to achieve the constant current status during the operation of the LED light source while assuring the operating current is always greater than a holding current required by the TRIAC element when the TRIAC element is conducted.
1≦130°. The casing has a support member formed on the casing and protruded in a direction opposite to the direction of bending the metal retaining substrate. The LED lead frame enhances the illumination angle and light uniformity of the lightbulb.
An LED driving device with open circuit protection and color temperature and brightness adjustment is applied in a lamp to drive LEDs which are divided into strings, and at least one string is formed by connecting blue light diodes in series, and the remaining strings are formed by connecting yellow light LEDs in series, and at least one of the yellow light strings is connected to the blue light string in parallel and then connected to the remaining strings in series to form a node. The LED driving device employs a switch to conduct the blue or yellow light string to change the color temperature of the emitted light of the lamp, and a power input pin of a control chip is electrically coupled to the node. If there is an open circuit caused by an abnormality of the LEDs, the operation will be stopped to provide protection.
A capacitor structure is provided, which includes a conductive substrate, a first dielectric layer, and a first metal layer. The conductive substrate includes a first surface and at least one first concave located on the first surface. The first dielectric layer covers the first surface and the first concave. The first metal layer covers the first dielectric layer, wherein the first dielectric layer and the first metal layer respectively have concave structures corresponding to the first concave. A stack-type capacitor structure is also provided.
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L 29/94 - Metal-insulator-semiconductors, e.g. MOS
A ceiling lamp adopting a non-separating driver circuit includes a conversion module and a control module. The conversion module converts an input voltage into an operating voltage to drive the LEDs and forming a driving current, and the control module monitors the operating voltage and the driving current to adjust the operating cycle of the conversion module, change the output voltage value of the operating voltage, and linearly change the driving current at a constant current state. The conversion module just executes the power conversion for one time to provide the driving power of the LEDs instead of using the conventional driving method that executes a two-stage power conversion by a separating power converter and a negative booster of the conventional ceiling lamp. Therefore, the ceiling lamp adopting a non-separating driver circuit is capable of lowering the circuit cost and improving the operating efficiency.
A light-emitting device comprises: a light-emitting stack having an upper side, a first edge having an end point, and a second edge opposite to the first edge; a first bonding region arranged on the upper side, near the first edge, and far from the end point; a second bonding region separated from to the first bonding region by a first distance and being far from the end point; a third bonding region arranged on the upper side; a fourth bonding region separated from the third bonding region by a second distance longer than the first distance; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; a third electrode connected to the third bonding region; a fourth electrode connected to the fourth bonding region; and a fifth electrode connected to the first bonding region and pointing to the fourth bonding region.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/76 - Making of isolation regions between components
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Disclosed is a variable power dimming control circuit for driving and linearly adjusting the illumination brightness of a plurality of light emitting diodes (LEDs), and the circuit includes a dimming stabilization unit and a control unit. The control unit is provided for detecting an input current of a circuit, and the dimming stabilization unit is driven for outputting a holding current when the input power is smaller than a standard, and stopping the output the holding current when the input power is greater than the standard. When the LEDs are dimmed to low luminance, a chip controls the operation of the dimming stabilization unit to assure the stability of the dimming operation of a TRIAC. When the LEDs are adjusted to high or full brightness, the chip stops the output of the holding current to reduce unnecessary power consumption and enhance the overall circuit performance effectively.
The present disclosure discloses a method of manufacturing a light-emitting device comprising the steps of providing a light-emitting wafer having a semiconductor stacked structure and an alignment mark, sensing the alignment mark, and separating the light-emitting wafer into a plurality of light-emitting diodes and removing the alignment mark accordingly.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
The present disclosure provides an illumination device. The illumination device includes a cap structure. The cap structure is partially coated with a reflective material operable to reflect light. The illumination device includes one or more lighting-emitting devices disposed within the cap structure. The light-emitting devices may be light-emitting diode (LED) chips. The illumination device also includes a thermal dissipation structure. The thermal dissipation structure is coupled to the cap structure in a first direction. The thermal dissipation structure and the cap structure have a coupling interface. The coupling interface extends in a second direction substantially perpendicular to the first direction. The thermal dissipation structure has a portion that intersects the coupling interface at an angle. The angle is in a range from about 60 degrees to about 90 degrees according to some embodiments.
B60Q 1/06 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights adjustable, e.g. remotely-controlled from inside vehicle
F21K 99/00 - Subject matter not provided for in other groups of this subclass
F21V 3/04 - GlobesBowlsCover glasses characterised by materials, surface treatments or coatings
B05D 5/06 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain multicolour or other optical effects
F21V 29/74 - Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
F21V 29/77 - Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
F21K 9/20 - Light sources comprising attachment means
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21K 9/60 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
F21K 9/66 - Details of globes or covers forming part of the light source
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An LED device includes a substrate including a first and second light emitting modules, and first and second opposite sides. The first light emitting module includes a first conductive electrode located adjacent to the first side, a second conductive electrode located adjacent to the second side, and a first plurality of light emitting micro diodes electrically connected in the form of a plurality of serially connected bridge rectifiers between the first conductive electrode and the second conductive electrode. The second light emitting module includes a third conductive electrode located adjacent to the first side, a fourth conductive electrode adjacent to the second side, and a second plurality of light emitting micro diodes electrically connected in the form of a plurality of serially connected bridge rectifiers between the third conductive electrode and the fourth conductive electrode. The first, second, third, and fourth conductive electrodes are physically separated from each other.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
F21K 99/00 - Subject matter not provided for in other groups of this subclass
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
96.
Light-emitting element and the light-emitting array having the same
A light-emitting element includes: a light-emitting structure; a plurality of first contact portions separately on the light-emitting structure; and a plurality of reflective portions disposed separately among the plurality of first contact portions.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Disclosed is an all-angle light emitting element having high heat dissipating efficiency. The all-angle light emitting element has a transparent substrate, at least one light emitting chip, at least one heat dissipating rib and thermal glue. The transparent substrate has a chip fixing area with an area A. The heat dissipating rib is attached onto the transparent substrate, and the heat dissipating rib has a heat dissipating section and a heat source contact section, and the heat source contact section has an area B, and 3%≦B/A≦26%. The heat dissipating section and the heat source contact section of the heat dissipating rib can effectively conduct the heat generated by an optical chip and provide a 360-degree all-angle light emission.
A backlight module is provided, including a back plate, a diffusion plate, multiple lighting bars mounted on the back plate and at least one lighting module mounted on each of the lighting bars, where each of the lighting modules has an LED forward light source and at least one pair of LED non-forward light sources, and the pair of LED non-forward light sources is mounted on the side of the LED forward light source, and light emitted from the LED forward light source and light emitted from each of the pair of LED light sources are spliced together to form a diffusing light shape. Therefore, the backlight module of the present invention has reduced lighting bars to decrease the weight, volume and cost of the whole backlight module and liquid-crystal display device, and overcome the problems of non-uniform brightness of conventional backlight modules.
In accordance with certain embodiments, a phosphor element at least partially surrounding a light-emitting die is shaped to influence color-temperature divergence.
