The present disclosure provides a circuitry electrically connected to a battery, a regulation circuit and an operating method thereof. The circuitry includes a regulation circuit, a first transistor set and a second transistor set. The regulation circuit includes a first node, a second node and a third node. The first node electrically connects to a power source, and the second node electrically connects to a cathode of the battery. When the circuitry is operated in a first mode, the first node electrically connects to the third node through the first transistor set to create a first path from the first node to the second node. When the circuitry is operated in a second mode, the second node electrically connects to the third node through the second transistor set to create a second path from the second node to the first node.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H10D 80/20 - Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups , e.g. assemblies comprising capacitors, power FETs or Schottky diodes
2.
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
The present application relates to the technical field of semiconductors, and provides a semiconductor device manufacturing method and a semiconductor device. The method comprises: forming a barrier layer on a substrate, and forming an epitaxial layer on the barrier layer; or forming an epitaxial layer on a substrate, and transferring the epitaxial layer to other substrates. The barrier layer is used for blocking impurities in the epitaxial layer from diffusing towards the substrate.
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a group III-V dielectric layer disposed on the second nitride semiconductor layer; a gate electrode disposed on the second nitride semiconductor layer; and a first passivation layer disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode by the first passivation layer.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer, the second nitride semiconductor layer forming a first recess and a second recess; and an electrode disposed on the second nitride semiconductor layer and comprising an element; wherein the electrode is disposed in the first recess and the second recess.
H10D 64/23 - Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
H10D 62/824 - Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure and a conductive layer. The substrate has a first surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The conductive layer is disposed on the second nitride semiconductor layer. The conductive layer has a first length extending in a first direction substantially parallel to the first surface of the substrate, a second length extending in a second direction substantially perpendicular to the first direction—from a cross section view perspective—wherein the second length is greater than the first length.
H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
6.
Semiconductor device with multichannel heterostructure and manufacturing method thereof
A semiconductor device and a method for manufacturing the same are provided in this disclosure. The semiconductor device includes a semiconductor heterostructure layer. The semiconductor heterostructure layer includes alternating first semiconductor material layers and second semiconductor material layers. Two-dimensional hole gas (2DHG) may be generated between each first semiconductor material layer and adjacent second semiconductor material layer. A conductive structure, including a plurality of conductive fingers extends from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer. The plurality of conductive fingers are arranged in a direction substantially parallel to the surface. The lengths of the plurality of conductive fingers progressively increase in that direction so that an end portion of each conductive finger is respectively positioned in a different first semiconductor material layer and is in contact with the 2DHG.
H10D 64/23 - Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
H10D 62/824 - Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
7.
Apparatus for measuring dynamic on-resistance of nitride-based semiconductor device
An apparatus for measuring dynamic on-resistance of a device under test (DUT) is provided. The apparatus comprises a testing interface configured for coupling between the DUT and a measuring equipment; a first measuring circuit configured for sensing a drain-source voltage of the DUT and generating a first measuring signal proportional to the drain-source voltage; a current sensing circuit configured for sensing a drain current flowing from a drain to a source of the DUT and generating a current sensing signal; a second measuring circuit configured for receiving the current sensing signal and generating a second measuring signal proportional to the drain current; a first clamping circuit configured for eliminating overshoots in the first measuring signal; a second clamping circuit configured for eliminating overshoots in the second measuring signal. As the overshoot in the measuring voltage signals can be eliminated, the time required for the measuring signal to settle is shortened.
The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer. The second electrode is disposed on the second nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer and between the first electrode and the second electrode. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
H01C 17/00 - Apparatus or processes specially adapted for manufacturing resistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
A nitride-based semiconductor device includes a nitride-based semiconductor wafer, a protecting layer, and a plurality of connecting bumps. The nitride-based semiconductor wafer comprises a plurality of nitride-based dies. Each of the nitride-based dies comprises a connecting surface and a plurality of connecting pads and the connecting pads are embedded in the connecting surface. The protecting layer is disposed on the connecting surfaces of the nitride-based dies. The connecting bumps are embedded in the protecting layer. Every connecting bump connects one of the connecting pads. Every connecting bump has a first polished plane, and the first polished plane is free from the protecting layer. A manufacturing method of nitride-based semiconductor device is also provided.
The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a doped nitride semiconductor layer and a first conductive layer. The first nitride semiconductor layer is on the substrate. The second nitride semiconductor layer is on the first nitride semiconductor layer and has a band gap greater than that of the first semiconductor layer. The doped nitride semiconductor layer is on the second nitride semiconductor layer. The first nitride semiconductor layer, the second nitride semiconductor layer and the doped nitride semiconductor layer extend along a first direction. The first conductive layer is formed above the doped nitride semiconductor layer and the second nitride semiconductor layer. The first conductive layer includes a first conductive portion and a second conductive portion. The second conductive portion is adjacent to the first conductive portion along the first direction. The second conductive portion is spaced apart from the first conductive portion by a first gap.
A nitride-based device for driving a multi-phase AC motor, comprises: a primary switching element; a nitride-based inverter having an input terminal electrically connected to a second conduction terminal of the primary switching element, a plurality of output terminals electrically and respectively connected to a plurality of phase windings of the AC motor, a ground terminal electrically connected to a ground and a plurality of branches. Each branch includes: a nitride-based low-side switching element and a nitride-based high-side switching element. When an operation of the AC motor is to be initialized, a controller is configured to turn off the low-side switching elements and the high-side switching elements for a time delay before turning on the primary switching element. The provided device allows a motor system to have high current capacity and efficiency as well as simple and easy driving control.
H02P 27/04 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
H02M 7/42 - Conversion of DC power input into AC power output without possibility of reversal
12.
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A nitride-based semiconductor device includes a source electrode, a drain electrode, a gate electrode, and a conductive layer. The source electrode at least extends along a first direction. The drain electrode at least extends along the first direction. The gate electrode at least extends along the first direction. The conductive layer includes a first trace, a second trace, and a third trace. The first trace is electrically connected to the source electrode. The second trace is electrically connected to the drain electrode. The third trace is electrically connected to the gate electrode and has a first strip and a second strip which extend along a second direction different than the first direction, in which the first trace and the second trace are located between the first and second strips of the third trace.
The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a n-type doped nitride-based semiconductor layer, a p-type doped nitride-based semiconductor layer, and an electrode. The first nitride-based semiconductor layer has a first portion and a second portion, in which the first portion has a thickness greater than that of the second portion and is surrounded by the second portion. The second nitride-based semiconductor layer is disposed over the first portion and has a bandgap greater than that of the first nitride-based semiconductor layer. The n-type doped nitride-based semiconductor layer is disposed over the second portion of the first nitride-based semiconductor layer. The p-type doped nitride-based semiconductor layer is disposed over and makes contact with the n-type doped nitride-based semiconductor layer. The electrode penetrates the p-type doped nitride-based semiconductor layer to make contact with the n-type doped nitride-based semiconductor layer.
The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source and a drain electrodes, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer and has a bandgap greater than that of the first nitride-based semiconductor layer, so as to form a heterojunction and a two-dimensional electron gas (2DEG) region adjacent to the heterojunction. The source and the drain electrodes are disposed over the second nitride-based semiconductor layer. The gate electrode is disposed over the second nitride-based semiconductor layer and located between the source and drain electrodes. The second nitride-based semiconductor layer has a thicker portion located at least one side of the gate electrode.
An apparatus and method for measuring dynamic threshold voltage of a nitride-based device under test (DUT) is provided. The apparatus comprising: a DUT control circuit configured for providing a DUT control signal to turn on and off the DUT; a first switching element configured for conducting or blocking the DUT control signal; a stressing circuit configured for applying a stressing voltage and current to the DUT; a second switching element configured for conducting or blocking the stressing voltage and current; a measuring circuit configured for measuring dynamic threshold voltage of the DUT after the DUT is stressed by the stressing circuit; a first switch control circuit configured for providing a first switch control signal to turn on and off the first switching element; and a second switch control circuit configured for providing a second switch control signal to turn on and off the second switching element.
G01R 27/02 - Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
G01R 31/26 - Testing of individual semiconductor devices
H01L 29/86 - Types of semiconductor device controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
16.
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME
The present disclosure provides a nitride-based semiconductor integrated circuit (IC) chip including at least one transistor and a built-in bypass diode configured for bypassing reverse current flowing through the transistor. The built-in bypass diode includes a n-type doped region electrically connected to the drain electrode of the transistor and a p-type doped region electrically connected to the source electrode of the transistor. The built-in bypass diode can function as a source-to-drain body diode to realize low turn-on voltage drop in reverse conduction. Therefore, the reverse current can be bypassed and the dead time losses can be reduced without increasing PCB area or causing extra parasitic effects.
A nitride-based semiconductor circuit includes a carrier, a nitride-based semiconductor die, and connecting clips. The nitride-based semiconductor circuit has first connecting surfaces, and the first connecting surfaces located around the carrier, and the connecting clips connect the nitride-based semiconductor die and the first connecting surface. The carrier has an accommodation hole. The nitride-based semiconductor die is disposed in the accommodation hole. Every connecting clip has a ground surface, and the ground surfaces are located at the top of the nitride-based semiconductor circuit, and the ground surfaces are located above the carrier and the nitride-based semiconductor die. The nitride-based semiconductor die has a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, and a 2DEG region.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
18.
Circuit system and manufacturing and operating method therefor
A circuit system includes a power circuit and an operation circuit. The operation circuit is electrically connected to the power circuit. The operation circuit is configured to control operation of the power circuit, detect a first signal of the power circuit during the operation, and protect the power circuit in response to the first signal.
H02H 3/10 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current additionally responsive to some other abnormal electrical conditions
H02H 1/00 - Details of emergency protective circuit arrangements
H02H 5/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
19.
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a doped III-V semiconductor layer, a plurality of fillings, and a gate electrode. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The doped III-V semiconductor layer is disposed over the second nitride-based semiconductor layer and extends along a first direction over the second nitride-based semiconductor layer. The doped III-V semiconductor layer comprises a plurality of segments arranged along the first direction. The fillings are disposed over the second nitride-based semiconductor layer and arranged along the first direction with the segments of the doped III-V semiconductor layer. The gate electrode is disposed over the doped III-V semiconductor layer and extends along the first direction over the doped III-V semiconductor layer. The gate electrode spans across the fillings.
The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a doped III-V semiconductor layer, and a gate electrode. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The doped III-V semiconductor layer is disposed over the second nitride-based semiconductor layer and extends along a first direction over the second nitride-based semiconductor layer. The doped III-V semiconductor layer comprises at least one modified portion extending from a first sidewall to a second sidewall of the doped III-V semiconductor layer, and the first and second sidewalls are opposite. The gate electrode is disposed over the doped III-V semiconductor layer and spans across the modified portion along a first direction.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/43 - Electrodes characterised by the materials of which they are formed
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
21.
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device comprises: a substrate (101); a first nitride semiconductor layer (103) located on the substrate (101); a second nitride semiconductor layer (105) located on the first nitride semiconductor layer (103) and having an energy gap greater than that of the first nitride semiconductor layer (103), the second nitride semiconductor layer (105) comprising a first doped region (105-1) and a first intrinsic region (105-2); a source contact (107) and a drain contact (109), located on the second nitride semiconductor layer (105); a gate structure (111) located on the second nitride semiconductor layer (105) and between the source contact (107) and the drain contact (109), the gate structure (111) comprising a third nitride semiconductor layer (113) and a gate contact (115) located on the third nitride semiconductor layer (113); and a fourth nitride semiconductor layer (117), located on the second nitride semiconductor layer (105) and between the gate structure (111) contact and the drain contact (109). Roughly in the direction connecting the source contact (107) and the drain contact (109), the projection of the gate structure (111) towards the direction of the substrate (101) overlaps with the projection of the first doped region (105-1) towards the direction of the substrate (101).
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a depletion mode device, and an enhancement mode device. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The depletion mode device includes a first III-V semiconductor layer disposed over the second nitride-based semiconductor layer. The enhancement mode device includes a second III-V semiconductor layer disposed over the second nitride-based semiconductor layer. The first III-V semiconductor layer and the second III-V semiconductor layer have the same thickness, and the second III-V semiconductor layer is doped to have a conductivity type different than that of the first III-V semiconductor layer.
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a source field plate, a drain field plate, and a reduced surface field (RESURF) structure. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The source field plate extends over and electrically coupled to the source electrode. The drain field plate extends over and electrically coupled to the drain electrode. The RESURF structure is disposed over the second nitride-based semiconductor layer and located between the source and drain field plates, in which the RESURF structure further includes a first doped nitride-based semiconductor layer making contact with the second nitride-based semiconductor layer and a first conductive layer disposed on the first doped nitride-based semiconductor layer and electrically coupled to the source field plate.
A semiconductor packaged device includes a semiconductor die, a plurality of first conductive pads, a conductive layer, a first heat dissipation structure, and a second heat dissipation structure. The semiconductor die has a top surface, a bottom surface, and an inclined side surface connecting the top surface to the bottom surface. The conductive layer is electrically connected with the semiconductor die through one of the first conductive pads, in which the conductive layer extends laterally and downward along the inclined side surface of the semiconductor die. The first heat dissipation structure is disposed over the top surface of the semiconductor die and thermally coupled to the semiconductor die through the first conductive pads. The second heat dissipation structure is disposed under the bottom surface of the semiconductor die and thermally coupled to the semiconductor die.
A III-nitride-based semiconductor packaged structure includes a lead frame, a first adhesive layer, a III-nitride-based die, a second adhesive layer, and a first conductive trace. The lead frame includes a die paddle and a lead. The first adhesive layer is disposed over the die paddle. The III-nitride-based die is disposed over the first adhesive layer. The second adhesive layer is disposed over the III-nitride-based die. The first conductive trace electrically connects the III-nitride-based die to the lead, in which the first conductive trace extends from a position above the III-nitride-based die to a position above the lead and has an extending path turning twice.
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, an etch resistant layer, and a gate electrode. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed on the second nitride-based semiconductor layer. The etch resistant layer is disposed on the second nitride-based semiconductor layer. The etch resistant layer makes contact with the second nitride-based semiconductor layer and extends from the second nitride-based semiconductor layer to a position higher than the source electrode and the drain electrode. The gate electrode is disposed over the second nitride-based semiconductor layer and has a bottom potion and a middle portion over the bottom portion and wider than the bottom portion.
A nitride-based semiconductor device includes a nitride-based semiconductor structure, a doped nitride-based semiconductor layer, and a gate electrode. The nitride-based semiconductor structure has an active region and an isolation region enclosing the active region. The doped nitride-based semiconductor layer is disposed over the nitride-based semiconductor structure and extends across the active region along an extending direction. The gate electrode is disposed over the doped nitride-based semiconductor layer and narrower than the doped nitride-based semiconductor layer. The gate electrode extends along the extending direction and is shorter than the doped nitride-based semiconductor layer along the extending direction.
A semiconductor device includes a substrate, a plurality of epitaxy structures, a protection layer, and a dielectric layer. The substrate includes a plurality of first regions and a second region having at least one groove surrounding each of the first regions. Each of the first regions comprises a device region and an edge region surrounding the device region. The epitaxy structures are disposed over the device regions, respectively. The protection layer is disposed over and makes contact with top surfaces of the edge regions and the second region. Each of the epitaxy structures is confined by the first dielectric layer. The dielectric layer is stacked on the protection layer to form an interface therebetween. The interface is located directly on the edge region and the groove.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
29.
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a nitride-based semiconductor device is provided. The method includes steps as follows. An epitaxy structure is formed on a silicon-based substrate. An oxide structure is formed on the epitaxy structure. A mask layer having an opening is formed on the epitaxy structure such that at least one portion is exposed from the opening in a chamber. A first halogen-based gas is introduced into the chamber to remove the exposed portion of the oxide structure such that a portion of the epitaxy structure is exposed. A second halogen-based gas different than the first halogen-based gas is introduced into the chamber to remove the exposed portion of the epitaxy structure such that a portion of the silicon-based substrate is exposed.
A semiconductor device includes a first and a second nitride-based semiconductor layers, a drain, a source electrodes, a gate electrode, a plurality of field plates, a conductive layer, and at least one contact via. The field plates are disposed over the second nitride-based semiconductor layer and located between the gate and drain electrodes. The gate electrode is free from coverage of the field plates. The conductive layer is disposed over the field plates. The at least one contact via connect one of the field plates to the conductive layer, such that the one of the field plates and the contact via have substantially the same voltage level.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
31.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first passivation layer, a gate electrode, and a first field plate. The first passivation layer has a first portion with at least one thickness modulating structure and a second portion having a planar structure. The first passivation layer makes contact with a top surface of the second nitride-based semiconductor layer to provide a variable stress thereto, such that an electron density of a first zone of the 2DEG region beneath the first portion is different from that of a second zone of the 2DEG region beneath the second portion. The first field plate is disposed over the first passivation layer and extends horizontally above the gate electrode. An orthogonal projection of the first field plate on the second nitride-based semiconductor layer is located out of the thickness modulating structure on the second nitride-based semiconductor layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/84 - Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
32.
NITRIDE-BASED ELECTRONIC DEVICE WITH WAFER-LEVEL DYNAMIC ON-RESISTANCE MONITORING CAPABILITY
The present disclosure provides a nitride-based electronic device with wafer-level dynamic on-resistance monitoring capability which can be integrated into an integrated circuit chip. The nitride-based electronic device comprises: a control terminal, a first conduction terminal, a second conduction terminal, a voltage-sensing terminal, a power switching element, a sense switching element, a first clamping element and a second clamping element. When the power switching element is turned on by a control signal received by the control terminal, a voltage-sensing signal indicative of an on-state voltage across the first and second conduction terminals of the power switching element is generated at the voltage-sensing terminal. The present invention provides a cost-effective approach to realize wafer-level monitoring of on-resistance of power devices such that development cycle of the power devices can be greatly reduced.
The present disclosure provides a circuitry electrically connected to a battery. The circuitry includes a regulation circuit, a first transistor set and a second transistor set. The regulation circuit includes a first node, a second node and a third node. The first node electrically connects to a power source, and the second node electrically connects to a cathode of the battery. The first transistor set are electrically connecting to the first node and the third node of the regulation circuit. The second transistor set are electrically connecting to the second node and the third node of the regulation circuit. When the circuitry is operated in a first mode, the first node electrically connects to the third node through the first transistor set to create a first path from the first node to the second node. When the circuitry is operated in a second mode, the second node electrically connects to the third node through the second transistor set to create a second path from the second node to the first node.
The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, a doped nitride-based semiconductor layer, a first gate electrode and a second gate electrode, and a third gate electrode. The source electrode and a drain electrode are disposed over the second nitride-based semiconductor layer. The doped nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer and between the source electrode and the drain electrode. The first gate electrode and the second gate electrode are disposed on the doped nitride-based semiconductor layer and spaced apart from each other. The third gate electrode is disposed over the first and second gate electrodes and makes contact with a portion of the doped nitride-based semiconductor layer between the first and second gate electrodes.
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a doped nitride-based semiconductor layer, a nitride-based isolation layer, a gate electrode, and a passivation layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The second nitride-based semiconductor layer has a bandgap higher than a bandgap of the first nitride-based semiconductor layer. The doped nitride-based semiconductor layer is disposed above the second nitride-based semiconductor and having a first width. The nitride-based isolation layer is disposed on the doped nitride-based semiconductor layer and has a second width less than the first width. The gate electrode disposed on the nitride-based isolation layer and has a third width greater than the second width. The passivation layer is disposed above the second nitride-based semiconductor layer and has a portion located between the doped nitride-based semiconductor layer and the gate electrode.
A nitride-based semiconductor device includes a nitride-based semiconductor wafer, a protecting layer, and a plurality of connecting bumps. The nitride-based semiconductor wafer comprises a plurality of nitride-based dies. Each of the nitride-based dies comprises a connecting surface and a plurality of connecting pads and the connecting pads are embedded in the connecting surface. The protecting layer is disposed on the connecting surfaces of the nitride-based dies. The connecting bumps are embedded in the protecting layer. Every connecting bump connects one of the connecting pads. Every connecting bump has a first polished plane, and the first polished plane is free from the protecting layer. A manufacturing method of nitride-based semiconductor device is also provided.
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
37.
APPARATUS FOR MEASURING DYNAMIC ON-RESISTANCE OF NITRIDE-BASED SEMICONDUCTOR DEVICE
An apparatus for measuring dynamic on-resistance of a device under test(DUT) is provided.The apparatus(10A) comprises a testing interface configured for coupling between the DUT(20) and a measuring equipment(30); a first measuring circuit(102) configured for sensing a drain-source voltage of the DUT(20) and generating a first measuring signal proportional to the drain-source voltage; a current sensing circuit(110) configured for sensing a drain current flowing from a drain to a source of the DUT(20) and generating a current sensing signal; a second measuring circuit(104) configured for receiving the current sensing signal and generating a second measuring signal proportional to the drain current, a first clamping circuit(106) configured for eliminating overshoots in the first measuring signal; a second clamping circuit(108) configured for eliminating overshoots in the second measuring signal. As the overshoots in the measuring voltage signals can be eliminated, the time required for the measuring signal to settle is shortened.
A semiconductor packaged device includes a semiconductor die, a conductive clip, and an encapsulant. The conductive clip is disposed over a back surface of the semiconductor die and thermally coupled to the semiconductor die. The conductive clip spans across the back surface of the semiconductor die and extends downward to a first position that is out of the semiconductor die and lower than an active surface of the semiconductor die facing away the conductive clip. The encapsulant encapsulates the semiconductor die and the conductive clip.
A semiconductor device includes a substrate, an insulating layer, and an epitaxial structure. The first substrate layer is doped with p-type dopants. The second substrate layer is doped with n-type dopants and disposed over the first substrate layer. The insulating layer is disposed over the first substrate layer and makes contact with at least one side surface of the second substrate layer. The insulating layer and the second substrate layer collectively cover a top surface of the first substrate layer. The epitaxial structure is disposed over and makes contact with top surfaces of the second substrate layer and the insulating layer.
A semiconductor device includes a substrate, an insulation layer, and a plurality of epitaxial structures. The substrate includes a first substrate layer and a plurality of second substrate layers. The first substrate layer is doped with p-type dopants. The second substrate layers are doped with n-type dopants and disposed over the first substrate layer. A p-n junction is formed between each of the second substrate layer and the first substrate layer. The insulation layer is disposed over the second substrate layers, such that each of the second substrate layers has a first region covered with the insulation layer and a second region free from coverage of the insulation layer. The epitaxial structures respectively are disposed directly over the second regions of the second substrate layers, such that each of the epitaxial structures is confined by the insulation layer.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 21/8258 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by , , or
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
41.
Clamping circuit integrated on gallium nitride semiconductor device and related semiconductor device
A semiconductor device and a clamping circuit including a substrate; a first semiconductor layer, arranged on the substrate and composed of a III-nitride semiconductor material; a second semiconductor layer, arranged on the first semiconductor layer and composed of a III-nitride semiconductor material; a power transistor structure, including a gate structure, a drain structure and a source structure arranged on the second semiconductor layer; the first transistor structures, arranged on the second semiconductor layer; and the second transistor structures, arranged on the second semiconductor layer in series. One end of the first transistor structures and one end of the second transistor structures are jointly electrically connected to the drain structure of the power transistor structure, and the other end of the first transistor structures and the other end of the second transistor structures are jointly electrically connected to the source structure of the power transistor structure.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
A semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer, the second nitride semiconductor layer forming a first recess and a second recess; and an electrode disposed on the second nitride semiconductor layer and comprising an element; wherein the electrode is disposed in the first recess and the second recess.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer programs [downloadable software]; calculating machines; data processing apparatus; computer memory devices; disks, magnetic; computer peripheral devices; couplers [data processing equipment]; microprocessors; monitors [computer hardware]; processors [central processing units]; integrated circuit cards [smart cards]; notebook computers; pocket calculators; portable computers; tablet computers; Humanoid robots with artificial intelligence for use in scientific research; Humanoid robots with artificial intelligence for preparing beverages; Humanoid robots having communication and learning functions for assisting and entertaining people; thin client computers; smartglasses; smartwatches; smart rings; Large-screen liquid crystal displays; Computer hardware for telecommunications; Personal computers; Computer terminals; Computer motherboards; pocket computers for note-taking; Flat panel display screens; Digital signal processors; digital voice signal processors; Electronic desk calculators; Communications computers; Microcomputers; Liquid crystal displays; Palmtop computers; wearable computers; digital notepads for personal use; Electronic calculators; Computers for managing control devices for aircraft; internet servers; Computer servers; Computer network server; flexible flat panel displays for computers; Central processing units; Intranet servers; netbook computers; Hand scanner; laptop computers; computers for use in data management; Desktop computers; Network servers; computer terminals for banking purposes; Semiconductor wafers; semiconductor devices; transducers; Monolithic ceramic capacitors; wafers for integrated circuits; semi-conductors; single-crystal silicon wafers; silicon epitaxial wafers; quartz crystal oscillators; Polysilicon chips; Computer circuit boards; High-voltage transformers; printed circuits; integrated circuits; chips [integrated circuits]; printed circuit boards; Electronic chips; transformers [electricity]; voltage regulators; Voltage stabilizing power supply; low-voltage power supplies; switch plates with hign-low voltage; Electric current transformers; electric voltage transformers for telecommunication devices; Large-scale integrated circuits; circuit boards incorporating integrated circuits; Voltage regulators for electric power; electric power converters; Electric current switches; Current converters; Circuit boards; voltage monitoring units; Power adapters; Electronic circuits; Electronic circuit boards; voltage converters for amplifying power; Computer monitors; Step-down transformers; Structured semi-conductor wafers; Transistors; Thyristors; Frequency synthesizers; Circuits for heavy current; Driver frequency converters; Solar wafers; antenna amplifiers; Microchips; tubes for radios; Liquid crystal display [LCD] panels; Liquid crystal display screens; Rectifier tubes; Direct current converters; Frequency converters; Electric transformers; Power switches; Power controllers; Electronic semi-conductors; Electronic integrated circuits; Induction voltage regulators; High-frequency switches; High-frequency switching power supplies; Power amplifiers; Integrated circuit modules; Computer chips; electrical power distribution blocks; Electric power distribution apparatus; electronic controls for automobiles; Microchips [computer hardware]; voltage stabilizers; Rectifier modules; electronic chips for the manufacture of integrated circuits; Semiconductor wafers, silicon wafers, germanium wafers, gallium nitride wafers, microelectronic wafers, optoelectronic wafers; Gallium nitride light-emitting diode grain; Gallium nitride light-emitting diode epitaxy wafers; Gallium nitride wafers; Semiconductor wafers, elements and devices consisting of silicon carbide and gallium nitride; Gallium nitride semiconductor devices; semiconductor devices (Gallium nitride); A semiconductor consisting of gallium nitride based on diamond, sapphire, silicon and silicon carbide substrates; accumulators, electric; Smartphone battery chargers; battery chargers for electronic cigarettes; battery chargers for home video game machines; chargers for smartphones; chargers for computer game joysticks; computer display adapters; Graphics accelerators; Electronic circuit cards; All-in-one PCs and TVs; ethernet switches; Computer network switches; Semiconductor testing apparatus; detectors; Semiconductor chips; Semiconductor power elements; Optical semiconductors; Semiconductor optical amplifiers; Battery charging devices; wireless battery chargers; Battery charge devices for electric accumulators; photovoltaic installations for generating electricity; mobile phone battery chargers for use in vehicles; Battery charger for tablet computers; Battery charge devices for use in electric accumulators; photovoltaic apparatus and installations for generating solar electricity; Solar-powered battery chargers; Wireless chargers for smart phones; USB chargers adapted for car cigarette lighter sockets; Electric car charging piles; chargers for electric accumulators; chargers for electric batteries; charging stations for electric vehicles; Mobile phone chargers; Portable power chargers.
44.
Semiconductor device with asymmetric gate structure
A semiconductor device includes a channel layer, a barrier layer, source contact and a drain contact, a doped group III-V layer, and a gate electrode. The barrier layer is positioned above the channel layer. The source contact and the drain contact are positioned above the barrier layer. The doped group III-V layer is positioned above the barrier layer and between the first drain contact and the first source contact. The first doped group III-V layer has a first non-vertical sidewall and a second non-vertical sidewall. The gate electrode is positioned above the doped group III-V layer and has a third non-vertical sidewall and a fourth non-vertical sidewall. A horizontal distance from the first non-vertical sidewall to the third non-vertical sidewall is different than a horizontal distance from the second non-vertical sidewall to the fourth non-vertical sidewall.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Some embodiments of the present disclosure provide a semiconductor device including a channel layer, a barrier layer, a p-type doped III-V layer, a gate, a drain, and a doped semiconductor layer. The barrier layer is disposed on the channel layer. The p-type doped III-V layer is disposed on the barrier layer. The gate is disposed on the p-type doped III-V layer. The drain is disposed on the barrier layer. The doped semiconductor layer is disposed on the barrier layer and is covered by the drain. The drain has a first portion located between the p-type doped III-V layer and an entirety of the doped semiconductor layer.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer programs [downloadable software]; calculating machines; data processing apparatus; computer memory devices; disks, magnetic; computer peripheral devices; couplers [data processing equipment]; microprocessors; monitors [computer hardware]; processors [central processing units]; integrated circuit cards [smart cards]; notebook computers; pocket calculators; portable computers; tablet computers; Humanoid robots with artificial intelligence for use in scientific research; Humanoid robots with artificial intelligence for preparing beverages; Humanoid robots having communication and learning functions for assisting and entertaining people; thin client computers; smartglasses; smartwatches; smart rings; Large-screen liquid crystal displays; Computer hardware for telecommunications; Personal computers; Computer terminals; Computer motherboards; pocket computers for note-taking; Flat panel display screens; Digital signal processors; digital voice signal processors; Electronic desk calculators; Communications computers; Microcomputers; Liquid crystal displays; Palmtop computers; wearable computers; digital notepads for personal use; Electronic calculators; Computers for managing control devices for aircraft; internet servers; Computer servers; Computer network server; flexible flat panel displays for computers; Central processing units; Intranet servers; netbook computers; Hand scanner; laptop computers; computers for use in data management; Desktop computers; Network servers; computer terminals for banking purposes; Semiconductor wafers; semiconductor devices; transducers; Monolithic ceramic capacitors; wafers for integrated circuits; semi-conductors; single-crystal silicon wafers; silicon epitaxial wafers; quartz crystal oscillators; Polysilicon chips; Computer circuit boards; High-voltage transformers; printed circuits; integrated circuits; chips [integrated circuits]; printed circuit boards; Electronic chips; transformers [electricity]; voltage regulators; Voltage stabilizing power supply; low-voltage power supplies; switch plates with hign-low voltage; Electric current transformers; electric voltage transformers for telecommunication devices; Large-scale integrated circuits; circuit boards incorporating integrated circuits; Voltage regulators for electric power; electric power converters; Electric current switches; Current converters; Circuit boards; voltage monitoring units; Power adapters; Electronic circuits; Electronic circuit boards; voltage converters for amplifying power; Computer monitors; Step-down transformers; Structured semi-conductor wafers; Transistors; Thyristors; Frequency synthesizers; Circuits for heavy current; Driver frequency converters; Solar wafers; antenna amplifiers; Microchips; tubes for radios; Liquid crystal display [LCD] panels; Liquid crystal display screens; Rectifier tubes; Direct current converters; Frequency converters; Electric transformers; Voltage regulators; Power switches; Power controllers; Electronic semi-conductors; Electronic integrated circuits; Induction voltage regulators; High-frequency switches; High-frequency switching power supplies; Power amplifiers; Integrated circuit modules; Computer chips; electrical power distribution blocks; Electric power distribution apparatus; electronic controls for automobiles; Microchips [computer hardware]; voltage stabilizers; Rectifier modules; electronic chips for the manufacture of integrated circuits; Semiconductor wafers, silicon wafers, germanium wafers, gallium nitride wafers, microelectronic wafers, optoelectronic wafers; Gallium nitride light-emitting diode grain; Gallium nitride light-emitting diode epitaxy wafers; Gallium nitride wafers; Semiconductor wafers, elements and devices consisting of silicon carbide and gallium nitride; Gallium nitride semiconductor devices; semiconductor devices (Gallium nitride); A semiconductor consisting of gallium nitride based on diamond, sapphire, silicon and silicon carbide substrates; accumulators, electric; Smartphone battery chargers; battery chargers for electronic cigarettes; battery chargers for home video game machines; chargers for smartphones; chargers for computer game joysticks; computer display adapters; Graphics accelerators; Electronic circuit cards; All-in-one PCs and TVs; ethernet switches; Computer network switches; Semiconductor testing apparatus; detectors; Semiconductor chips; Semiconductor power elements; Optical semiconductors; Semiconductor optical amplifiers; Battery charging devices; wireless battery chargers; Battery charge devices for electric accumulators; photovoltaic installations for generating electricity; mobile phone battery chargers for use in vehicles; Battery charger for tablet computers; Battery charge devices for use in electric accumulators; photovoltaic apparatus and installations for generating solar electricity; Solar-powered battery chargers; Wireless chargers for smart phones; USB chargers adapted for car cigarette lighter sockets; Electric car charging piles; chargers for electric accumulators; chargers for electric batteries; charging stations for electric vehicles; Mobile phone chargers; Portable power chargers.
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer programs [downloadable software]; calculating machines; data processing apparatus; computer memory devices; disks, magnetic; computer peripheral devices; couplers [data processing equipment]; microprocessors; monitors [computer hardware]; processors [central processing units]; integrated circuit cards [smart cards]; notebook computers; pocket calculators; portable computers; tablet computers; thin client computers; smartglasses; smartwatches; smart rings; Large-screen liquid crystal displays; Computer hardware for telecommunications; Personal computers; Computer terminals; Computer motherboards; pocket computers for note-taking; Flat panel display screens; Digital signal processors; digital voice signal processors; Electronic desk calculators; Communications computers; Microcomputers; Liquid crystal displays; Palmtop computers; wearable computers; digital notepads for personal use; Electronic calculators; Computers for managing control devices for aircraft; internet servers; Computer servers; Computer network server; flexible flat panel displays for computers; Central processing units; Intranet servers; netbook computers; Hand scanner; laptop computers; computers for use in data management; Desktop computers; Network servers; computer terminals for banking purposes; Semiconductor wafers; semiconductor devices; transducers; Monolithic ceramic capacitors; wafers for integrated circuits; semi-conductors; single-crystal silicon wafers; silicon epitaxial wafers; quartz crystal oscillators; Polysilicon chips; Computer circuit boards; High-voltage transformers; printed circuits; integrated circuits; chips [integrated circuits]; printed circuit boards; Electronic chips; transformers [electricity]; voltage regulators; Voltage stabilizing power supply; low-voltage power supplies; switch plates with hign-low voltage; Electric current transformers; electric voltage transformers for telecommunication devices; Large-scale integrated circuits; circuit boards incorporating integrated circuits; Voltage regulators for electric power; electric power converters; Electric current switches; Current converters; Circuit boards; voltage monitoring units; Power adapters; Electronic circuits; Electronic circuit boards; voltage converters for amplifying power; Computer monitors; Step-down transformers; Structured semi-conductor wafers; Transistors; Thyristors; Frequency synthesizers; Circuits for heavy current; Driver frequency converters; Solar wafers; antenna amplifiers; Microchips; tubes for radios; Liquid crystal display [LCD] panels; Liquid crystal display screens; Rectifier tubes; Direct current converters; Frequency converters; Electric transformers; Voltage regulators; Power switches; Power controllers; Electronic semi-conductors; Electronic integrated circuits; Induction voltage regulators; High-frequency switches; High-frequency switching power supplies; Power amplifiers; Integrated circuit modules; Computer chips; electrical power distribution blocks; Electric power distribution apparatus; electronic controls for automobiles; Microchips [computer hardware]; voltage stabilizers; Rectifier modules; electronic chips for the manufacture of integrated circuits; Semiconductor wafers, silicon wafers, germanium wafers, gallium nitride wafers, microelectronic wafers, optoelectronic wafers; Gallium nitride light-emitting diode grain; Gallium nitride light-emitting diode epitaxy wafers; Gallium nitride wafers; Semiconductor wafers, elements and devices consisting of silicon carbide and gallium nitride; Gallium nitride semiconductor devices; semiconductor devices (Gallium nitride); A semiconductor consisting of gallium nitride based on diamond, sapphire, silicon and silicon carbide substrates; accumulators, electric; Smartphone battery chargers; battery chargers for electronic cigarettes; battery chargers for home video game machines; chargers for smartphones; chargers for computer game joysticks; computer display adapters; Graphics accelerators; Electronic circuit cards; All-in-one PCs and TVs; ethernet switches; Computer network switches; Semiconductor testing apparatus; detectors; Semiconductor chips; Semiconductor power elements; Optical semiconductors; Semiconductor optical amplifiers; Battery charging devices; wireless battery chargers; Battery charge devices for electric accumulators; photovoltaic installations for generating electricity; mobile phone battery chargers for use in vehicles; Battery charger for tablet computers; Battery charge devices for use in electric accumulators; photovoltaic apparatus and installations for generating solar electricity; Solar-powered battery chargers; Wireless chargers for smart phones; USB chargers adapted for car cigarette lighter sockets; Electric car charging piles; chargers for electric accumulators; chargers for electric batteries; charging stations for electric vehicles; Mobile phone chargers; Portable power chargers.
09 - Scientific and electric apparatus and instruments
Goods & Services
downloadable computer software programs for spreadsheet management; calculating machines; data processing apparatus; computer memory devices; blank magnetic disks; computer peripheral devices; Data processing equipment, namely, couplers; microprocessors; computer hardware; computer monitors; central processing units, namely, word processors; blank smart cards; integrated circuit cards; notebook computers; pocket calculators; portable computers; tablet computers; humanoid robots with artificial intelligence for use in scientific research; thin client computers; smartglasses; smartwatches; smart rings; Large-screen liquid crystal displays; Computer hardware for telecommunications; Personal computers; Computer terminals; Computer motherboards; pocket computers for note-taking; Flat panel display screens; Digital signal processors; digital voice signal processors; Electronic desk calculators; Communications computers; Microcomputers; Liquid crystal displays; Palmtop computers; wearable computers in the nature of smartwatches; digital notepads for personal use; Electronic calculators; Computers for managing control devices for aircraft; internet servers; Computer servers; Computer network server; flexible flat panel displays for computers; central processing units (CPU); Intranet servers; netbook computers; Handheld scanners; laptop computers; computers for use in data management; Desktop computers; Network servers; computer terminals for banking purposes; Semiconductor wafers; semiconductor devices; electrical transducers; Monolithic ceramic capacitors; wafers for integrated circuits; semi-conductors; single-crystal silicon wafers; silicon epitaxial wafers; Computer circuit boards; High voltage transformers; printed circuits; integrated circuits; electronic chips for the manufacture of integrated circuits; printed circuit boards; Electrical transformers; voltage regulators; Voltage stabilizing power supply; low-voltage power supplies; switch plates; current transformers; electric transformers; electric voltage transformers; Large scale integrated circuits; Circuit boards provided with integrated circuits; Voltage regulators for electric power; electric power converters; Electric current switches; electric converters and current converters; Circuit boards; voltage monitoring units; Power adapters; Electronic circuits; Electronic circuit board; Computer monitors; Step down transformers; Structural semi-conductor wafers; Transistors; Thyristors; Frequency synthesizers; Circuits for heavy current; Driver frequency converters; Solar wafers; Aerial amplifiers; Microchips; Frequency stabilizers; tubes for radios; Liquid crystal display (LCD) panels; Liquid crystal display (LCD) screens; Rectifier tubes; Direct current converters; Frequency converters; Electric transformers; Electric Voltage regulators; Power switches; Power controllers; Electronic semi-conductors; Electronic integrated circuits; Induction voltage regulators; High frequency switches; High-frequency switching power supplies; Power amplifiers; Integrated circuit modules; Computer chips; Distribution transformers; electrical power distribution blocks; electrical power distribution units;; computer hardware, namely, microchips; voltage stabilizers; Rectifier modules; piezoelectric electronic controls for motors; switches; Semiconductor wafers; silicon wafers; germanium wafers; gallium nitride wafers; microelectronic wafers; optoelectronic wafers; Gallium nitride light-emitting diode grain; Gallium nitride light-emitting diode epitaxy wafers; Gallium nitride wafers; Semiconductor wafers, materials and devices consisting of silicon carbide and gallium nitride; Gallium nitride semiconductor devices; semiconductor devices (Gallium nitride); A semiconductor consisting of gallium nitride based on diamond, sapphire, silicon and silicon carbide substrates; accumulators, electric; Smartphone battery chargers; battery chargers for electronic cigarettes; battery chargers for home video game machines; chargers for smartphones; chargers for computer game joysticks; adapters for computer monitors; Graphics accelerators; Electronic circuit cards; All-in-one PCs and TVs; ethernet switches; Computer network switches; Semiconductor testing apparatus; detectors; Semiconductor chips; Semiconductor power elements; Optical semiconductors; Semiconductor optical amplifiers; battery charging devices for motor vehicles; wireless battery chargers; Battery charge devices for electric accumulators; mobile phone battery chargers for use in vehicles; Battery charger for tablet computers; Battery charge devices for use in electric accumulators; Solar-powered battery chargers; Wireless chargers for smart phones; USB chargers adapted for car cigarette lighter sockets; Electric car charging piles; chargers for electric accumulators; chargers for electric batteries; charging stations for electric vehicles; Mobile phone chargers; Portable power chargers
49.
Semiconductor device structures and methods of manufacturing the same
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure and a conductive layer. The substrate has a first surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The conductive layer is disposed on the second nitride semiconductor layer. The conductive layer has a first length extending in a first direction substantially parallel to the first surface of the substrate, a second length extending in a second direction substantially perpendicular to the first direction—from a cross section view perspective—wherein the second length is greater than the first length.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A testing circuit includes a first circuit and a second circuit. The first circuit and second circuit have a first capacitor and a second capacitor. The first circuit is connected to a first transistor. The second circuit is connected to a second transistor. A first inductor has a first terminal connected to an input of the testing circuit and a second terminal connected to a source of the second transistor. A first diode has an anode connected to ground and a cathode connected to the second terminal of the first inductor. The second capacitor has a first terminal connected to a drain of the second transistor and a second terminal connected to ground. The first capacitor has a first terminal connected to the input of the testing circuit and a second terminal connected to ground.
The electronic circuits and semiconductor device having the same are provided. The electronic circuit includes: a first transistor including a first electrode coupled with an input voltage; a second transistor including a first electrode coupled with a second electrode of the first transistor; a first capacitor coupled between the first transistor and the second transistor; a first diode including a first terminal coupled with the first electrode of the first transistor; a second diode including a first terminal coupled with a second terminal of the first diode and a second terminal coupled with a second electrode of the second transistor; a second capacitor coupled between the first transistor and the first diode; and a third capacitor coupled between the first diode and the second transistor.
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure, and a field plate. The second nitride semiconductor layer is formed on a first surface of the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The field plate includes a first portion and a second portion connected to the first portion. The first portion has a first surface substantially in parallel to the first surface of the first nitride semiconductor layer, and a second surface adjacent to the first surface of the first portion. The first surface of the first portion of the field plate and the second surface of the first portion of the field plate define a first angle of about 90°.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
An electronic device includes a substrate, a transistor and a doped well. The substrate includes a first region and a second region different from the first region. The transistor is disposed on the first region of the substrate. The transistor includes a first nitride semiconductor layer disposed on the substrate, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer. The second nitride semiconductor layer has a bandgap greater than that of the first nitride semiconductor layer. The doped well is disposed in the second region.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A semiconductor structure includes a first nitride semiconductor layer; a second nitride semiconductor layer and a first conductive structure. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first conductive structure is disposed on the second nitride semiconductor layer. The first conductive structure functions as one of a drain and a source of a transistor and one of an anode and a cathode of a diode.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-nitride layer, a gate, a connection structure, and a gate bus. The gate is disposed over the III-nitride layer. The connection structure is disposed over the gate. The gate bus extends substantially in parallel to the gate and disposed over the connection structure from a top view perspective. The gate bus is electrically connected to the gate through the connection structure.
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate and a second nitride semiconductor layer on the first nitride semiconductor layer. The second nitride semiconductor layer has a first area and a second area, and the second nitride semiconductor layer has single crystals. The semiconductor device includes an electrode in contact with the first area. A first concentration of Aluminum (Al) of the first area is less than a second concentration of Al of the second area, and the single crystals in the first area take over a crystal structure of the first nitride semiconductor layer.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Embodiments of the present application disclose a semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor layer, a first doped nitride semiconductor layer disposed on the semiconductor layer, and a second doped nitride semiconductor layer disposed on the first doped nitride semiconductor layer. The semiconductor device further includes an undoped nitride semiconductor layer between the semiconductor layer and the first doped nitride semiconductor layer. The undoped nitride semiconductor layer has a first surface in contact with the semiconductor layer and a second surface in contact with the first doped nitride semiconductor layer.
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
An electronic device includes a first group III nitride transistor and an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a diode and a second transistor. The diode has an anode electrically connected to a gate of the first group III nitride transistor. The second transistor has a drain electrically connected to the gate of the first group III nitride transistor, a gate electrically connected to a cathode of the diode and a source electrically connected to a source of the first group III nitride transistor.
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
59.
Electronic device and over current protection circuit
An electronic device includes a first group III nitride transistor and an over current protection circuit (OCP). The OCP circuit includes an input device and a detection device. The input device is configured to receive a control signal and to generate a first voltage to a gate of the first group III nitride transistor. The detection device is configured to generate an output signal having a first logical value if a current at a drain of the first group III nitride transistor is less than a predetermined value and to generate the output signal having a second logical value if the current at the drain of the first group III nitride transistor is equal to or greater than the predetermined value, wherein the first logical value is different from the second logical value.
H02H 7/00 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
H02H 7/20 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
60.
Semiconductor device structures and methods of manufacturing the same
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a group III-V dielectric layer disposed on the second nitride semiconductor layer; a gate electrode disposed on the second nitride semiconductor layer; and a first passivation layer disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode by the first passivation layer.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
The present disclosure provides an electrostatic protection circuit and an electronic device. The electrostatic protection circuit is connected to a first end point and a second end point of a power device. The electrostatic protection circuit is configured to allow bilateral electrostatic protection between the first end point and the second end point of the power device. The power device includes a transverse high-electron-mobility transistor (HEMT).
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H03K 17/081 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
63.
Semiconductor device structures and methods of manufacturing the same
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
H01C 17/00 - Apparatus or processes specially adapted for manufacturing resistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
A semiconductor apparatus includes a channel layer, a barrier layer, a source contact and a drain contact, a first doped group III-V semiconductor, a group III-V semiconductor, and a second doped group III-V semiconductor. The barrier layer is disposed on the channel layer. The source contact and the drain contact are disposed on the channel layer. The first doped group III-V semiconductor is disposed on the barrier layer. The group III-V semiconductor is disposed on the first doped group III-V semiconductor and between the source contact and the drain contact. The second doped group III-V semiconductor is disposed on the group III-V semiconductor and between the source contact and the drain contact. The group III-V semiconductor has a central region covered by the second doped group III-V semiconductor and a peripheral region free from coverage by the second doped group III-V semiconductor.
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
09 - Scientific and electric apparatus and instruments
Goods & Services
Downloadable computer software for use in database management, use as a spreadsheet, word processing; calculating machines; data processing apparatus; computer memory devices; blank magnetic disks; computer peripheral devices; Data processing equipment, namely, couplers; microprocessors; computer hardware, namely, monitors; central processing units, namely, processors; smart cards, namely, integrated circuit cards; notebook computers; pocket calculators; portable computers; tablet computers; humanoid robots with artificial intelligence for use in scientific research; thin client computers; smartglasses; smartwatches; smart rings; Large-screen liquid crystal displays; Computer hardware for telecommunications; Personal computers; Computer terminals; Computer motherboards; pocket computers for note-taking; Flat panel display screens; Digital signal processors; digital voice signal processors; Electronic desk calculators; Communications computers; Microcomputers; Liquid crystal displays; Palmtop computers; wearable computers in the nature of smartglasses, smartwatches; digital notepads for personal use; Electronic calculators; Computers for managing control devices for aircraft; internet servers; Computer servers; Computer network server; flexible flat panel displays for computers; central processing units (CPU); Intranet servers; netbook computers; Handheld scanners; laptop computers; computers for use in data management; Desktop computers; Network servers; computer terminals for banking purposes; Semiconductor chips; semiconductor devices; transducers, namely, electro-optic transducers, electrical transducers; Monolithic ceramic capacitors; wafers for integrated circuits; semi-conductors; single-crystal silicon wafers; silicon epitaxial wafers; polysilicon photovoltaic cells; Computer circuit boards; High voltage transformers; printed circuits; integrated circuits, namely, integrated circuits chips; integrated circuits, namely, chips; printed circuit boards; Electronic chips for the manufacture of integrated circuits; Electrical transformers; voltage regulators; Voltage stabilizing power supply; low-voltage power supplies; electricity current transformers; electric voltage transformers for telecommunication devices; Large scale integrated circuits; Circuit boards provided with integrated circuits; Voltage regulators for electric power; electric power converters; Electric current switches; Electrical current converters; Circuit boards; voltage monitoring units; Power adapters; Electronic circuits; Electronic circuit board; voltage converters for amplifying power; Computer monitors; Step down transformers; Structured semi-conductor wafers; Transistors; Thyristors; Frequency synthesizers; Circuits for heavy current; Solar wafers; Aerial amplifiers; Microchips; Frequency stabilizers; vacuum tubes for radios; Liquid crystal display panels; Liquid crystal display screens; Rectifier tubes; Direct current converters; Frequency converters; Electric transformers; Electric Voltage regulators; Power switches; Power controllers; Electronic semi-conductors; Electronic integrated circuits; Induction voltage regulators; High frequency switches; High-frequency switching power supplies; Power amplifiers; Integrated circuit modules; Computer chips; Distribution transformers; electrical power distribution blocks; power distribution equipment, namely, electric power distribution machines; electronic controls for automobiles, namely, electronic controls for gasoline engines for land vehicles, vehicle climate controls; computer hardware, namely, microchips; voltage stabilizers; Rectifier modules; piezoelectric switches; Semiconductor wafers; silicon wafers; germanium wafers; gallium nitride wafers; microelectronic wafers, namely, semiconductor wafers; optoelectronic wafers, namely, semiconductor wafers; Gallium nitride light-emitting diode grain, namely, light emitting diodes; Gallium nitride light-emitting diode epitaxy wafers, namely, semiconductor wafers; materials and devices consisting of silicon carbide and gallium nitride, namely, semiconductor wafers; Gallium nitride semiconductor devices; semiconductor devices made of Gallium nitride; semiconductor made of gallium nitride based on diamond, sapphire, silicon and silicon carbide substrates; accumulators, electric; Smartphone battery chargers; battery chargers for electronic cigarettes; battery chargers for home video game machines; chargers for smartphones; battery chargers for computer game joysticks; Graphics accelerators; Electronic circuit cards; All-in-one PCs and TVs; ethernet switches; Computer network switches; Semiconductor testing apparatus; detectors, namely, metal detectors, motion detectors; Semiconductor power elements; Optical semiconductors; Semiconductor optical amplifiers; Battery charging devices; wireless battery chargers; Battery charge devices for electric accumulators; photovoltaic installations for generating electricity, namely, photovoltaic solar panels for the production of electricity; mobile phone battery chargers for use in vehicles; Battery charger for tablet computers; Battery charge devices for use in electric accumulators; photovoltaic apparatus and installations for generating solar electricity, namely, photovoltaic solar panels for the production of electricity; Solar-powered battery chargers; Wireless chargers for smart phones, namely, wireless charging pads for smartphones; USB chargers adapted for car cigarette lighter sockets; Electric car charging piles; chargers for electric accumulators; chargers for electric batteries; charging stations for electric vehicles; Mobile phone chargers; Portable power chargers
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Computer programs [downloadable software]; calculating machines; data processing apparatus; computer memory devices; disks, magnetic; computer peripheral devices; couplers [data processing equipment]; microprocessors; monitors [computer hardware]; processors [central processing units]; integrated circuit cards [smart cards]; notebook computers; pocket calculators; portable computers; tablet computers; humanoid robots with artificial intelligence; thin client computers; smartglasses; smartwatches; smart rings; Large-screen liquid crystal displays; Computer hardware for telecommunications; Personal computers; Computer terminals; Computer motherboards; pocket computers for note-taking; Flat panel display screens; Digital signal processors; digital voice signal processors; Electronic desk calculators; Communications computers; Microcomputers; Liquid crystal displays; Palmtop computers; wearable computers; digital notepads for personal use; Electronic calculators; Computers for managing control devices for aircraft; internet servers; Computer servers; Computer network server; flexible flat panel displays for computers; Central processing units; Intranet servers; netbook computers; Hand scanner; laptop computers; computers for use in data management; Desktop computers; Network servers; computer terminals for banking purposes; Semiconductor wafers; semiconductor devices; transducers; Monolithic ceramic capacitors; wafers for integrated circuits; semi-conductors; single-crystal silicon wafers; silicon epitaxial wafers; quartz crystal oscillators; Polysilicon chips; Computer circuit boards; High-voltage transformers; printed circuits; integrated circuits; chips [integrated circuits]; printed circuit boards; Electronic chips; transformers [electricity]; voltage regulators; Voltage stabilizing power supply; low-voltage power supplies; switch plates with high-low voltage; Electric current transformers; electric voltage transformers for telecommunication devices; Large-scale integrated circuits; circuit boards incorporating integrated circuits; Voltage regulators for electric power; electric power converters; Electric current switches; Current converters; Circuit boards; voltage monitoring units; Power adapters; Electronic circuits; Electronic circuit boards; voltage converters for amplifying power; Computer monitors; Step-down transformers; Structured semi-conductor wafers; Transistors; Thyristors; Frequency synthesizers; Circuits for heavy current; Driver frequency converters; Solar wafers; antenna amplifiers; Microchips; tubes for radios; Liquid crystal display [LCD] panels; Liquid crystal display screens; Rectifier tubes; Direct current converters; Frequency converters; Electric transformers; Voltage regulators; Power switches; Power controllers; Electronic semi-conductors; Electronic integrated circuits; Induction voltage regulators; High-frequency switches; High-frequency switching power supplies; Power amplifiers; Integrated circuit modules; Computer chips; electrical power distribution blocks; Electric power distribution apparatus; electronic controls for automobiles; Microchips [computer hardware]; voltage stabilizers; Rectifier modules; electronic chips for the manufacture of integrated circuits; Semiconductor wafers, silicon wafers, germanium wafers, gallium nitride wafers, microelectronic wafers, optoelectronic wafers; Gallium nitride light-emitting diode grain; Gallium nitride light-emitting diode epitaxy wafers; Gallium nitride wafers; Semiconductor wafers, elements and devices consisting of silicon carbide and gallium nitride; Gallium nitride semiconductor devices; semiconductor devices (Gallium nitride); A semiconductor consisting of gallium nitride based on diamond, sapphire, silicon and silicon carbide substrates; accumulators, electric; Smartphone battery chargers; battery chargers for electronic cigarettes; battery chargers for home video game machines; chargers for smartphones; chargers for computer game joysticks; computer display adapters; Graphics accelerators; Electronic circuit cards; All-in-one PCs and TVs; ethernet switches; Computer network switches; Semiconductor testing apparatus; Detectors; Semiconductor chips; Semiconductor power elements; Optical semiconductors; Semiconductor optical amplifiers; Battery charging devices; wireless battery chargers; Battery charge devices for electric accumulators; photovoltaic installations for generating electricity; mobile phone battery chargers for use in vehicles; Battery charger for tablet computers; Battery charge devices for use in electric accumulators; photovoltaic apparatus and installations for generating solar electricity; Solar-powered battery chargers; Wireless chargers for smart phones; USB chargers adapted for car cigarette lighter sockets; Electric car charging piles; chargers for electric accumulators; chargers for electric batteries; charging stations for electric vehicles; Mobile phone chargers; Portable power chargers. material treatment information; abrasion; laminating; burnishing by abrasion; custom assembling of materials for others; millworking; electroplating; refining services; optical glass grinding; decontamination of hazardous materials; chemistry reagent processing and management. Scientific research and development; design of integrated circuits; Research in the field of semiconductor processing technology; Research and development of new products; Design of telecommunications equipment and parts; technological research; research in the field of physics; Research and development of new products for others; telecommunications technology consultancy; calibration [measuring]; chemical analysis; Product testing; material testing; industrial design; cloud computing; computer software design; consultancy in the design and development of computer hardware.
67.
Nitride-based semiconductor device and manufacturing method thereof
A semiconductor device includes a doped substrate, a barrier layer, a channel layer, and a doped semiconductor structure. The barrier layer is disposed on the doped substrate. The channel layer is disposed between the doped substrate and the barrier layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer. The doped semiconductor structure is embedded in the doped substrate and at a position lower than the channel layer, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
68.
Semiconductor devices with doped semiconductor materials
A semiconductor device includes a doped substrate, a barrier layer, a channel layer, a doped semiconductor structure, and the conductive structure. The barrier layer is disposed on the doped substrate. The channel layer is disposed between the doped substrate and the barrier layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer. The doped semiconductor structure is embedded in the doped substrate, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween. The conductive structure is disposed over the doped substrate and makes contact with the doped semiconductor structure, in which the conductive structure extends from the doped semiconductor structure to a position higher than the channel layer and the barrier layer.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
69.
Semiconductor device and manufacturing method therefor
The HEMT includes a channel layer, a barrier layer, a drain, and a gate conductor. The barrier layer is disposed on the channel layer. The drain is disposed on the barrier layer. The gate conductor is disposed on the barrier layer. The barrier layer comprises a doped semiconductor region extending from a top surface to a bottom surface of the barrier layer and located between the drain and the gate conductor.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
70.
Semiconductor device and manufacturing method therefor
The HEMT includes a channel layer, a barrier layer, a drain, and a gate conductor. The barrier layer is disposed on the channel layer. The drain is disposed on the barrier layer. The gate conductor is disposed on the barrier layer. The channel layer includes a doped semiconductor structure overlapping with a top surface of the channel layer and having a bottom-most border that is located over a bottom-most surface of the channel layer and is spaced apart from the bottom-most surface of the channel layer. The doped semiconductor structure is located between the drain and the gate conductor.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
71.
Semiconductor device with multichannel heterostructure and manufacturing method thereof
The present disclosure relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor heterostructure layer and a conductive structure. The semiconductor heterostructure layer includes alternating first semiconductor material layers and second semiconductor material layers. 2DHGs may be generated between each first semiconductor material layer and adjacent second semiconductor material layer. The conductive structure includes a plurality of conductive fingers extending from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer. The plurality of conductive fingers are arranged in a direction substantially parallel to the surface. The lengths of the plurality of conductive fingers progressively increase in that direction, so that an end portion of each conductive finger is respectively positioned in a different second semiconductor material layer and is not in contact with the 2DHG.
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap larger than a band gap of the first nitride semiconductor layer; an intermediate layer disposed on the second nitride semiconductor layer; and a conductive structure disposed on the intermediate layer, wherein a first even interface is formed between the intermediate layer and the second nitride semiconductor layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a first III-nitride layer, a second III-nitride layer, a first contact layer, a second contact layer, a structure, and a gate layer. The second III-nitride layer is in direct contact with the first III-nitride layer. The first contact layer and the second contact layer are disposed over the second III-nitride layer. The structure is adjacent to an interface of the first III-nitride layer and the second III-nitride layer, and a material of the structure is different from a material of the first III-nitride layer or a material of the second III-nitride layer. The gate layer is disposed between the first contact layer and the second contact layer.
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
74.
Semiconductor device with multichannel heterostructure and manufacturing method thereof
A semiconductor device and a method for manufacturing the same are provided in this disclosure. The semiconductor device includes a semiconductor heterostructure layer. The semiconductor heterostructure layer includes alternating first semiconductor material layers and second semiconductor material layers. Two-dimensional electron gas (2DEG) may be generated between each first semiconductor material layer and adjacent second semiconductor material layer. A conductive structure, including a plurality of conductive fingers extends from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer. The plurality of conductive fingers are arranged in a direction substantially parallel to the surface. The lengths of the plurality of conductive fingers progressively increase in that direction so that an end portion of each conductive finger is respectively positioned in a different first semiconductor material layer and is in contact with the 2DEG.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a group III-V layer disposed on the substrate, a dielectric layer disposed on the group III-V layer, and an inclined sidewall extending from the dielectric layer to the substrate. Wherein the substrate comprising a relative rough surface opposite the inclined sidewall.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 23/58 - Structural electrical arrangements for semiconductor devices not otherwise provided for
Some embodiments of the present disclosure provide a semiconductor device, including a substrate, a channel layer, a barrier layer, a p-type doped III-V layer, a source, a drain and a doped semiconductor layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The p-type doped III-V layer is disposed on the barrier layer. A gate is disposed on the p-type doped III-V layer. The source and the drain are arranged on two opposite sides of the gate. The doped semiconductor layer is provided with a first side close to the gate and a second side away from the gate. The drain covers the first side of the doped semiconductor layer.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
77.
Semiconductor device with multichannel heterostructure and manufacturing method thereof
A semiconductor device and a method for manufacturing the same are provided in this disclosure. The semiconductor device includes a semiconductor heterostructure layer. The semiconductor heterostructure layer includes alternating first semiconductor material layers and second semiconductor material layers. Two-dimensional electron gas (2DEG) may be generated between each first semiconductor material layer and adjacent second semiconductor material layer. A conductive structure, including a plurality of conductive fingers extends from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer. The plurality of conductive fingers are arranged in a direction substantially parallel to the surface. The lengths of the plurality of conductive fingers progressively increase in that direction so that an end portion of each conductive finger is respectively positioned in a different second semiconductor material layer and is not in contact with the 2DEG.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
78.
Semiconductor device with multichannel heterostructure and manufacturing method thereof
A semiconductor device and a method for manufacturing the same are provided in this disclosure. The semiconductor device includes a semiconductor heterostructure layer. The semiconductor heterostructure layer includes alternating first semiconductor material layers and second semiconductor material layers. Two-dimensional hole gas (2DHG) may be generated between each first semiconductor material layer and adjacent second semiconductor material layer. A conductive structure, including a plurality of conductive fingers extends from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer. The plurality of conductive fingers are arranged in a direction substantially parallel to the surface. The lengths of the plurality of conductive fingers progressively increase in that direction so that an end portion of each conductive finger is respectively positioned in a different first semiconductor material layer and is in contact with the 2DHG.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-V material layer and a gate structure. The gate structure includes a first portion and a second portion on the first portion. The first portion is on the III-V material layer. The first portion has a first surface and a second surface opposite to the first surface and adjacent to the III-V material layer. A length of the second surface of the first portion of the gate structure is less than a length of the first surface of the first portion of the gate structure. A length of the second portion of the gate structure is less than the length of the first portion of the gate structure.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A semiconductor device includes a barrier layer, a dielectric layer, a first spacer, a second spacer, and a gate. The dielectric layer is disposed on the barrier layer and defines a first recess. The first spacer is disposed on the barrier layer and within the first recess. The second spacer is disposed on the barrier layer and within the first recess. The first and second spacers are spaced apart from each other by a top surface of a portion of the barrier layer. The top surface of the portion of the barrier layer is recessed. The gate is disposed on the barrier layer, the dielectric layer, and the first and second spacers, in which the gate has a bottom portion located between the first and second spacers and making contact with the top surface of the portion of the barrier layer.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
81.
Semiconductor device and fabrication method thereof
A semiconductor device includes a barrier layer, a dielectric layer, a first protection layer, a first spacer, and a gate. The dielectric layer is disposed on the barrier layer. The first protection layer is disposed on the barrier layer, in which the first protection layer extends from a first sidewall of the dielectric layer to a top surface of the barrier layer. The first spacer is disposed on and received by the first protection layer, in which a top end of the first protection layer comprises a first curved surface between the first spacer and the dielectric layer. The gate is disposed on the barrier layer, the dielectric layer, and the first spacer. The gate extends from a top surface of the dielectric layer and at least along the first curved surface of the first protection layer to make contact with the top surface of the barrier layer.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
82.
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer. The second electrode is disposed on the second nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer and between the first electrode and the second electrode. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.
A semiconductor device structure and a method for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, a first electrode and a second electrode. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The third nitride semiconductor layer is disposed on the second nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer and spaced apart from the third nitride semiconductor layer. The second electrode covers an upper surface of the third nitride semiconductor layer and is in direct contact with the first nitride semiconductor layer.
A semiconductor device structure and a method for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, a first electrode and a second electrode. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The third nitride semiconductor layer is disposed on the second nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer and spaced apart from the third nitride semiconductor layer. The second electrode covers an upper surface of the third nitride semiconductor layer and is in direct contact with the first nitride semiconductor layer.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
85.
Device and method for testing semiconductor devices
A testing circuit includes a first circuit and a second circuit. The first circuit has a first capacitor and a second capacitor. The first circuit is configured to transfer at least a portion of a first voltage across the first capacitor to the second capacitor. The second circuit has the first capacitor and the second capacitor. The second circuit is configured to transfer at least a portion of a second voltage across the second capacitor to the first capacitor.
A testing circuit (100) includes a first circuit (120) and a second circuit (130). The first circuit (120) has a first capacitor (C1) and a second capacitor (C2). The first circuit (120) is configured to transfer at least a portion of a first voltage across the first capacitor(C1) to the second capacitor (C2). The second circuit(130) has the first capacitor (C1) and the second capacitor (C2). The second circuit (130) is configured to transfer at least a portion of a second voltage across the second capacitor (C2) to the first capacitor (C1).
A semiconductor device and a fabrication method thereof are disclosed. The semiconductor device includes a substrate (10), a first nitride semiconductor layer on the substrate and a second nitride semiconductor layer on the first nitride semiconductor layer. The second nitride semiconductor layer has a first area and a second area, and the second nitride semiconductor layer has single crystals. The semiconductor device includes an electrode (30, 32) in contact with the first area. A first concentration of Aluminum (Al) of the first area is less than a second concentration of Al of the second area, and the single crystals in the first area take over a crystal structure of the first nitride semiconductor layer.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer, the second nitride semiconductor layer forming a first recess and a second recess; and an electrode disposed on the second nitride semiconductor layer and comprising an element; wherein the electrode is disposed in the first recess and the second recess.
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure and a conductive layer. The substrate has a first surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The conductive layer is disposed on the second nitride semiconductor layer. The conductive layer has a first length extending in a first direction substantially parallel to the first surface of the substrate, a second length extending in a second direction substantially perpendicular to the first direction-from a cross section view perspective-wherein the second length is greater than the first length.
Electronic circuits and semiconductor device (1000) having the same are provided. The electronic circuit includes: a first transistor (Q1) including a first electrode coupled with an input voltage and a second electrode; a second transistor (Q2) including a first electrode coupled with the second electrode of the first transistor (Q1) and a second electrode coupled to a ground; a first capacitor (C1) coupled between the first electrode of the first transistor (Q1) and the second electrode of the second transistor (Q2); a first diode (D1) including a first terminal coupled with the first electrode of the first transistor (Q1) and a second terminal; a second diode (D2) including a first terminal coupled with the second terminal of the first diode (D1) and a second terminal coupled with the second electrode of the second transistor (Q2); a second capacitor (C2) coupled between the first electrode of the first transistor (Q1) and the second terminal of the first diode (D1); and a third capacitor (C3) coupled between the second terminal of the first diode (D1) and the second electrode of the second transistor (Q2).
Some embodiments of the disclosure provide an electronic device. The electronic device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer, and having a band gap greater than a band gap of the first nitride semiconductor layer; a group III-V dielectric layer disposed on the second nitride semiconductor layer; a gate electrode disposed on the second nitride semiconductor layer; and a first passivation layer disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode by the first passivation layer.
An electronic device which comprises: a substrate (10); a first nitride semiconductor layer (211) on the substrate (10); a second nitride semiconductor layer (212) on the first nitride semiconductor layer (211), the second nitride semiconductor layer (212) has a band gap greater than a band gap of the first nitride semiconductor layer (211); a group III-V dielectric layer is disposed on the second nitride semiconductor layer (212); a gate electrode (24) is disposed on the second nitride semiconductor layer (212); and a first passivation layer (30) is disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode (24) by the first passivation layer (30).
A semiconductor device and a fabrication method thereof are disclosed. The semiconductor device includes a first nitride semiconductor layer (111), a second nitride semiconductor layer (113), a gate structure (120), and a field plate (130). The first nitride semiconductor layer (111) has a first surface. The second nitride semiconductor layer (113) is formed on the first surface of the first nitride semiconductor layer (111) and has a greater bandgap than that of the first nitride semiconductor layer (111). The gate structure (120) is disposed on the second nitride semiconductor layer (113). The field plate (130) includes a first portion (133) and a second portion (131) connected to the first portion (133). The first portion (133) has a first surface (133b) substantially in parallel to the first surface of the first nitride semiconductor layer (111) along a first direction, and a second surface (133c) adjacent to the first surface of the first portion (133). The first surface (133b) of the first portion (133) of the field plate (130) and the second surface (133c) of the first portion (133) of the field plate (130) define a first angle of about 90°.
A semiconductor device structure includes a substrate, a channel layer, a barrier layer and a doped group III-V layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The doped group III-V layer is disposed on the barrier layer. The doped group III-V layer includes a first portion and a second portion. The first portion has a first concentration of a first element. The second portion is adjacent to the first portion and has a second concentration of the first element. The gate structure is disposed on the first portion of the doped group III-V layer. The first concentration of the first element is different from the second concentration of the first element.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-V material layer, a first gate, a second gate, and a first passivation layer. The first gate and the second gate are on the III-V material layer. The first passivation layer is on the first gate. A first activation ratio of an element in the first gate is different from a second activation ratio of the element in the second gate.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/095 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
96.
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer above the substrate, a semiconductor stack disposed on and in contact with the first nitride semiconductor layer, and a first electrode in contact with the semiconductor stack. Wherein the semiconductor stack comprises a first layer and a second layer, and a lattice constant of the first layer along an a-axis is less than the second layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
97.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device (1) is provided. The semiconductor device (1) comprises: a substrate (10); a first nitride semiconductor layer (12) on the substrate (10); a second nitride semiconductor layer (13) on the first nitride semiconductor layer (12) and having a band gap greater than a band gap of the first nitride semiconductor layer (12); a group III-V dielectric layer (14) disposed on the second nitride semiconductor layer (13); a gate electrode (18) disposed on the second nitride semiconductor layer (13); and a first passivation layer (16) disposed on the group III-V dielectric layer (14), wherein the group III-V dielectric layer (14) is separated from the gate electrode (18) by the first passivation layer (16).
An electronic device includes a substrate, a transistor and a doped well. The substrate includes a first region and a second region different from the first region. The transistor is disposed on the first region of the substrate. The transistor includes a first nitride semiconductor layer disposed on the substrate, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer. The second nitride semiconductor layer has a bandgap greater than that of the first nitride semiconductor layer. The doped well is disposed in the second region.
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a III-V material layer (11), a first gate (12), a second gate (13), and a first passivation layer (14). The first gate (12) and the second gate (13) are on the III-V material layer (11). The first passivation layer (14) is on the first gate (12).A first activation ratio of an element in the first gate (12) is different from a second activation ratio of the element in the second gate (13).
H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
A semiconductor device and a fabrication method thereof. The semiconductor device includes a III-nitride layer (110), a gate (120), a connection structure (130), and a gate bus (140). The gate (120) is disposed over the III-nitride layer (110). The connection structure (130) is disposed over the gate (120). The gate bus (140) extends substantially in parallel to the gate (120) and disposed over the connection structure (130) from a top view perspective. The gate bus (140) is electrically connected to the gate (120) through the connection structure (130).
