Abstract

A manufacturing method of a micro LED display device is provided. The method includes: providing an epitaxial structure layer, wherein the epitaxial structure layer comprises a plurality of micro light-emitting diodes disposed apart from each other; forming a connection layer at one side of the epitaxial structure layer away from the micro light-emitting diodes; providing a carrier and forming a release layer, a transparent layer and a light conversion layer on the carrier in order, wherein the light conversion layer comprises a plurality of light conversion portions, each of the light conversion portions corresponds to one of the micro light-emitting diodes; attaching the light conversion layer to the connection layer, so that the carrier configured with the release layer, the transparent layer and the light conversion layer is fixed on the epitaxial structure layer through the connection layer; and removing the release layer and the carrier.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A display panel is provided. The display panel includes a carrier having a patterned region that is disposed on the surface of the carrier and corresponds to a plurality of sub-pixel structures. The display panel also includes an encapsulation material layer disposed on a portion of the pattered region. The display panel further includes a first color conversion layer disposed on the portion of the encapsulation material layer and includes a plurality of first color conversion capsules. The first color conversion capsules are configured to convert the light-emitting color of the sub-pixel structures into a first light-emitting color. Partial surfaces of some first color conversion capsules are exposed from the encapsulation material layer.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

A semiconductor wafer carrier structure includes a carrier body having a surface, a protective film covering the surface, and a susceptor disposed on the carrier body and having an upper surface. The upper surface is a planar surface. The semiconductor wafer carrier structure further includes a patterned coating film formed on the upper surface and configured to directly face a semiconductor wafer. A material of the patterned coating film is different from the susceptor. The patterned coating film has two or more different thicknesses and is with a pattern, so that the semiconductor wafer is at least locally separated from the patterned coating film due to the pattern. The patterned coating film is continuously and entirely distributed on the upper surface of the susceptor toward the semiconductor wafer, and the upper surface of the susceptor is separated from the semiconductor wafer by the patterned coating film.

IPC Classes  ?

• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer. The outer surface of the second-type semiconductor layer exposes a lower surface of the diffusion structure away from the first-type semiconductor layer.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A micro LED display device in which each pixel unit of the display panel includes a first display pixel and a second display pixel. The first display pixel includes a first subpixel, a second subpixel and a third subpixel, and the second display pixel includes a fourth subpixel, a fifth subpixel and a sixth subpixel. The peak wavelength of fourth subpixel is less than that of first subpixel, and the peak wavelength of fifth subpixel is greater than that of second subpixel, so that at the same radiance, the luminance of second display pixel is greater than that of first display pixel, and the range of color gamut of first display pixel is greater than that of second display pixel. The control unit controls the driving unit to selectively drive the first display pixels or the second display pixels of the pixel units.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix

Abstract

A processing and detecting apparatus configured to process and detect an object is provided and includes a carrying platform, a laser unit, a wavelength measuring unit, and a computing unit. The carrying platform is configured to carry the object, and the object includes a substrate and a plurality of micro light emitting diodes (LEDs) disposed on the substrate. The laser unit is configured to perform a working procedure on the object on the carrying platform and excite each of the micro LEDs to radiate a light signal. The wavelength measuring unit is configured to measure the light signal radiated by exciting each of the micro LEDs in real time to obtain a spectrum of each of the micro LEDs. The computing unit is configured to analyze the spectra of the micro LEDs to determine whether the working procedure is abnormal.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
• G01J 3/28 - Investigating the spectrum
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, and a base layer stacked with each other. A width of the light-emitting layer is greater than that of the first-type semiconductor layer and that of the second-type semiconductor layer. A width of the base layer is at least greater than that of the second-type semiconductor layer. A manufacturing method of the micro light-emitting diode structure by mixing dry etching and wet etching. The manufacturing method not only reduces the time that the semiconductor layers are in contact with the etching solution in the wet etching process to increase the etching stability, but avoids the dangling bond effect on the sidewall caused by the dry etching. Therefore, a combination of the advantages of the two etchings further increases the external quantum efficiency.

IPC Classes  ?

• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/50 - Wavelength conversion elements

Abstract

A multi-layer display module includes a first display panel, a second display panel, a driving device, and an image composition control unit. The second display panel is located beside the first display panel and overlaps the first display panel. The first display panel and the second display panel have an interval therebetween. The driving device is configured to simultaneously provide image signals to the first display panel and the second display panel. An object image displayed in the first display panel is a first object image. An object image displayed in the second display panel is a second object image. The image composition control unit is configured to increase a size of the first object image displayed on the first display panel or decrease a size of the second object image displayed on the second display panel according to information of a relative position of an outside viewer.

IPC Classes  ?

• G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels
• G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

A multi-layer display module includes a first display panel, and a second display panel. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space between the first display panel and the second display panel. Transmittance of the second display panel is T2, luminance of the first display panel is L1, and luminance of the second display panel is L2. The multi-layer display module complies with A multi-layer display module includes a first display panel, and a second display panel. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space between the first display panel and the second display panel. Transmittance of the second display panel is T2, luminance of the first display panel is L1, and luminance of the second display panel is L2. The multi-layer display module complies with T ⁢ 2 > 40 ⁢ % and 0.8 ≤ L ⁢ 1 L ⁢ 2 * ( 1 - T ⁢ 2 ) .

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

A multi-layer display module includes a first display panel, and a second display panel. Dimension of long side of the first display panel is D1, and the first display panel has first pixel resolution P1. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space d between the first display panel and the second display panel. Dimension of the long side of the second display panel is D2, and the second display panel has the second pixel resolution P2. Transmittance of the second display panel is T2. The multi-layer display module complies with T2>40%, P1≠P2, and A multi-layer display module includes a first display panel, and a second display panel. Dimension of long side of the first display panel is D1, and the first display panel has first pixel resolution P1. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space d between the first display panel and the second display panel. Dimension of the long side of the second display panel is D2, and the second display panel has the second pixel resolution P2. Transmittance of the second display panel is T2. The multi-layer display module complies with T2>40%, P1≠P2, and D ⁢ 2 * T ⁢ 2 ≥ d ≥ D ⁢ 2 ❘ "\[LeftBracketingBar]" P ⁢ 1 - P ⁢ 2 ❘ "\[RightBracketingBar]" * P ⁢ 2 .

IPC Classes  ?

• G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

An epitaxial structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a lattice mismatch layer. The first type semiconductor layer includes a material of aluminum gallium indium phosphide. The active layer is disposed on a side of the first type semiconductor layer. The second semiconductor layer is disposed on a side of the active layer away from the first type semiconductor layer, and includes the material of aluminum gallium indium phosphide. The lattice mismatch layer includes the material of aluminum gallium indium phosphide and is disposed on any side of the first type semiconductor layer, the active layer, or the second type semiconductor layer. In an X-ray diffractometer analysis spectrum, at least one of the first type semiconductor layer, the active layer and the second type semiconductor layer corresponds to a main diffractive peak, the lattice mismatch layer has a secondary diffractive peak.

IPC Classes  ?

• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions

Abstract

A micro light-emitting diode display device includes a circuit substrate and a plurality of display pixels. The display pixels are arranged on the circuit substrate and are respectively electrically connected to the circuit substrate. Each display pixel includes a plurality of micro light-emitting elements. In each display pixel, a part of the micro light-emitting elements form at least one series-connection structure, and the micro light-emitting elements of the series-connection structure are within a wavelength range of the same lighting color. The circuit substrate respectively provides a same driving voltage to drive the micro light-emitting elements included in the series-connection structure of each display pixel and the micro light-emitting elements excluded from the series-connection structure.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light emitting diode panel including a circuit substrate and multiple transfer units. is provided. The circuit substrate includes multiple signal lines, multiple bonding pads, and multiple thin film transistors. The bonding pads extend from at least part of the signal lines. The transfer units are electrically bonded to a part of the bonding pads and are electrically connected to the thin film transistors. Each transfer unit has a micro light emitting diode and a transistor element. The thin film transistors each have a first semiconductor pattern. The transistor elements each have a second semiconductor pattern. An electron mobility of the second semiconductor pattern is at least five times an electron mobility of the first semiconductor pattern.

IPC Classes  ?

• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits

Abstract

The micro light-emitting chip structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer that has an end surface. The micro light-emitting chip structure also includes a first insulating layer, a reflective layer, and a second insulating layer disposed on the second-type semiconductor layer. The micro light-emitting chip structure further includes an electrode and a dielectric structure. The electrode is disposed on the end surface and penetrates the second insulating layer, the reflective layer, and the first insulating layer. The dielectric structure is between the electrode and the reflective layer and surrounds the electrode. The annular sidewall of the dielectric structure has a first end away from the second-type semiconductor layer and a second end close to the second-type semiconductor layer. The inner diameter of the first end is greater than or equal to the inner diameter of the second end.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting chip structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer having a peripheral surface and an end surface. The micro light-emitting chip structure includes a first insulating layer, a reflective layer, and a second insulating layer that cover at least the peripheral surface and the end surface. The reflective layer is disposed on the first insulating layer. The second insulating layer is disposed on the reflective layer. The micro light-emitting chip structure includes an electrode disposed on the end surface and connected to the second-type semiconductor layer. A gap is formed between the electrode and the reflective layer, so as to electrically insulate the electrode from the reflective layer.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A micro light-emitting chip structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer having a peripheral surface and an end surface. The micro light-emitting chip structure includes a first insulating layer, a reflective layer, and a second insulating layer that cover at least the peripheral surface and the end surface. The reflective layer is disposed on the first insulating layer. The second insulating layer is disposed on the reflective layer. The micro light-emitting chip structure includes an electrode disposed on the end surface and connected to the second-type semiconductor layer and a dielectric structure between the electrode and the reflective layer. The dielectric structure is connected to the first insulation layer and the second insulation layer and closes the part of the reflective layer adjacent to the electrode on the end surface, so as to electrically insulate the electrode from the reflective layer.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light emitting device inspection apparatus adapted to inspect a plurality of micro light emitting devices is provided. The micro light emitting device inspection apparatus includes a carrier stage, a light guide module and a detective module. The carrier stage is configured to hold the micro light emitting devices. The light guide module has a plurality of optical fibers. Each of the optical fibers has a light receiving surface and a light emitting surface away from each other. The at least one light beam is received by the light receiving surface of each optical fiber and exits through the light emitting surface of the optical fiber. The detective module is configured to receive and detect the at least one light beam from the light emitting surface of each optical fiber, thereby obtaining at least one optical property.

IPC Classes  ?

• G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
• G01J 1/04 - Optical or mechanical part

Abstract

A pixel circuit includes a current generator, a switch, and a time controller. The pixel circuit is configured in a display panel. The current generator provides a driving current, and controls the driving current according to a pulse amplitude modulation mechanism. The switch is coupled in series with the current generator and a light-emitting component, and is turned on or off according to a control signal, wherein the control signal is a pulse width modulation signal. The time controller generates the control signal, receives a set voltage, and adjusts a pulse width of the control signal according to a voltage value of the set voltage.

IPC Classes  ?

• G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix

Abstract

A wafer defect inspection apparatus including a carrier base, a light source module, a beam splitter, filters and image sensors are provided. The carrier base carries a sample to be tested. The light source module includes an illuminating unit and a pellicle mirror. The illuminating unit emits an inspection light ray. A reflective surface is capable of reflecting the inspection light ray to the sample to be tested, so that a reflective light ray formed by reflecting the inspection light ray reflected by the sample to be tested passes through the pellicle mirror and is then split into splitting light rays by the beam splitter. The filters are configured to be passed through by different bands corresponding to the splitting light rays. The image sensors receive the splitting light rays to generate imaging frames. Two corresponding positions in any two of the imaging frames have two different contrast ratios.

IPC Classes  ?

• G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined

Abstract

A wafer defect detection device adapted for detecting a sample to be tested including two detection features is provided. The wafer defect detection device includes a stage adapted for holding the sample to be tested, a light source module configured to output a detection light to the sample to be tested and reflect a reflected light, and an image sensor disposed on a path of the reflected light and adapted for receiving an image frame. The detection light includes spectra of a first light and a second light, which have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features. The spectrum of the second light is adapted for detecting other one of the detection features. Luminous intensities of the first light and the second light are independently controlled. The reflected light includes the image frame, which displays the detection features.

IPC Classes  ?

• G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined

Abstract

A micro LED display device and manufacturing method thereof. The micro LED display device includes a circuit substrate, a pixel structure layer, a support structure, a connection layer and a protection layer. The pixel structure layer is disposed on the top surface of the circuit substrate, and has plural micro LED units disposed separately. The micro LED units face the top surface and are electrically connected with the circuit substrate. The support structure is disposed on the top surface, extending from the top surface to the pixel structure layer and connected with the side surface of the pixel structure layer. The support structure protrudes from a surface of the pixel structure layer away from the circuit substrate. The connection layer is disposed in the accommodating space formed by the support structure and the surface of the pixel structure layer. The protection layer is disposed on the connection layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting diode display device and a micro light-emitting diode structure. The micro light-emitting diode display device includes a circuit substrate and a plurality of display pixels, the display pixels are arranged on the circuit substrate and are electrically connected with the circuit substrate individually. Each display pixel includes a plurality of series-connection structures, and the light wavelengths of the series-connection structures are different. Each series-connection structure includes at least two micro light-emitting elements, and the light wavelengths of the at least two micro light-emitting elements are within a wavelength range of one color light. The circuit substrate provides a driving voltage to drive the series-connection structures of each display pixel.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro semiconductor device includes an epitaxial structure and an optical layer. The optical layer is disposed on the epitaxial structure. The optical layer is a multi-layer film structure including a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second film layer. A refractive index of the first film layer and a refractive index of the second film layer are both greater than a refractive index of the third film layer. A thickness of the third film layer is greater than a thickness of the first film layer and s thickness of the second film layer. A reflectivity of the optical layer to an external light of the micro semiconductor device is greater than a self-luminescence of the epitaxial structure of the micro semiconductor device.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A processing method of a processing apparatus is provided, including step 1, step 2, step 3, and step 4. Step 1 is providing an object having a processed surface, and dividing the processed surface into multiple processed regions, where there is at least one workpiece on each processed region. Step 2 is performing path computation according to the workpiece on each processed region, and generating a processing path in each processed region, where the processing paths in the processed regions are different from each other. Step 3 is performing processing operation by a processing apparatus according to the processing path in one of the processed regions obtained from step 2. Step 4 is moving the processing apparatus to a next processed region after finishing the processing operation on each workpiece in the one of the processed regions. A processing system is also provided.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks

Abstract

An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes

Abstract

A defect detection and removal apparatus including a removing unit, an image capturing unit, and a determining unit is provided. The removing unit is configured to remove at least one defective micro-element on a substrate. The image capturing unit is configured to capture a detection image of at least one defective micro-element correspondingly on the substrate. The determining unit is coupled to the image capturing unit and the removing unit. The image capturing unit executes capturing a first detection image before the removing unit executes removing a defective micro-element, and executes capturing a second detection image after the removing unit executes removing the defective micro-element. The determining unit confirms whether the defective micro-element has been removed according to the first and second detection image obtained from the image capturing unit. A defect detection and removal method is also provided.

IPC Classes  ?

• G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
• G01N 21/88 - Investigating the presence of flaws, defects or contamination
• G06T 7/00 - Image analysis

Abstract

A micro light-emitting element including an epitaxial structure, an insulating layer, an electrode structure and a sacrificial layer is provided. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and extends through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between a surface of the insulating layer and the corresponding electrode structure. A micro light-emitting element display device is further provided.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro LED display device includes: a substrate; a plurality of micro light-emitting diodes disposed on the substrate; and a reflective layer and a black layer sequentially stacked on the substrate. The reflective layer and the black layer cover a surface of the substrate, wherein a top surface of the plurality of micro light-emitting diodes is exposed through the reflective layer and the black layer. A plurality of reflective banks and a plurality of black banks are sequentially disposed on the black layer and exposing the plurality of micro light-emitting diodes; and a color-conversion material covers the top surface of at least one of the plurality of micro light-emitting diodes. The color-conversion material is laterally disposed between the plurality of reflective banks. The reflective layer, the black layer, the plurality of reflective banks, and the plurality of black banks overlap each other in a display direction.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/60 - Reflective elements

Abstract

A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A light emitting display unit includes a redistribution layer (RDL) and multiple light emitting elements. The RDL includes multiple electrode patterns, multiple pad patterns, an insulating layer and multiple conductive through holes. A first gap and a second gap are respectively formed between two adjacent electrode patterns and between corresponding two adjacent pad patterns. A third length of the overlapping area of an orthographic projection of the first gap on the pad patterns and the pad patterns in a first direction is less than or equal to a second length of the second gap in the first direction. The micro light emitting elements are disposed on the RDL and electrically connected with the electrode patterns.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A method for trimming a micro electronic element includes: providing a substrate, wherein at least one micro electronic element is disposed on the substrate, heating an interface of the substrate and the micro electronic element by a first pulse laser beam to reduce a bonding force between the micro electronic element and the substrate, and irradiating a surface layer of the micro electronic element by a second pulse laser beam to generate a shock wave due to plasma on the surface layer of the micro electronic element. The shock wave removes the micro electronic element away from the substrate. An apparatus for trimming a micro electronic element is also provided.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• B23K 1/005 - Soldering by means of radiant energy
• B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B23K 26/351 - Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

Micro LED display device and driving method thereof. The display device includes a display substrate and a data driving circuit. The display substrate includes multiple pixels, and each pixel includes a first subpixel and a second subpixel. The first subpixel has a first subpixel circuit and a first light-emitting element. The second subpixel has a second subpixel circuit and a second light-emitting element. The first subpixel circuit and the second subpixel circuit are configured independently. The data driving circuit is electrically connected to the first and the second subpixel circuits. The data driving circuit transmits a first data signal to the first subpixel circuits to drive the first light-emitting elements and a second data signal to the second subpixel circuits to drive the second light-emitting elements. The first data signal is a PWM signal, and the second data signal is a PAM signal.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

A micro LED display device includes a display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes a first micro light-emitting element arranged in a straight line along a first direction. The pixel area of the second transfer area includes a second micro light-emitting element arranged in another straight line along the first direction. In the first direction, the first micro light-emitting element and the second micro light-emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A selectable-repairing micro light emitting diode display is provided. A backplane includes a plurality of transistor units. A plurality of pixel units are disposed on the backplane, and each of the pixel units includes a plurality of original sub-pixel units and at least one selectable-repairing sub-pixel unit. Each of the original sub-pixel units includes a set of original pad. The set of original pad is disposed on the backplane and connected to one of the transistor units. The at least one selectable-repairing sub-pixel unit is arranged between two of the original sub-pixel units next to each other and having different colors, and includes a set of repairing pad. The set of repairing pad is not connected to the transistor units. A plurality of micro light emitting elements are electrically connected to the sets of original pad and controlled to emit light through the corresponding transistor units, respectively.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

An epitaxial structure includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, and a buffer layer structure. The light emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light emitting layer. The buffer layer structure is disposed on one side of the first type semiconductor layer away from the second type semiconductor layer and includes a first buffer layer and a second buffer layer. The second buffer layer is located between the first buffer layer and the first type semiconductor layer, and the first buffer layer has a chlorine concentration greater than a chlorine concentration of the second buffer layer.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

A micro light emitting diode structure includes a temporary substrate, a plurality of micro light emitting elements, a plurality of light blocking structures, and a connection layer. The micro light emitting elements and the light blocking structures are disposed on the temporary substrate and arranged alternately. Each of the light blocking structures includes a light blocking layer, and a light shielding layer disposed thereon. The micro light emitting elements and the light blocking structures are fixed to the temporary substrate by the connection layer. The connection layer is a part of a plurality of fixing structures. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young's modulus of the light blocking layer is greater than a Young's modulus of the fixing structures, and the Young's modulus of the fixing structures is greater than a Young's modulus of the light shielding layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/60 - Reflective elements

Abstract

A manufacturing method of a micro light emitting diode structure includes: providing a first transfer stamp carrying a plurality of micro light emitting elements; providing a second transfer stamp carrying a plurality of light blocking structures, wherein each of the light blocking structures includes a light blocking layer and a light shielding layer disposed on the light blocking layer; providing a temporary substrate; transferring the micro light emitting elements onto the temporary substrate by the first transfer stamp; and transferring the light blocking structures onto the temporary substrate by the second transfer stamp. The micro light emitting elements and the light blocking structures are arranged alternately and fixed to the temporary substrate by connection layer. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young's modulus of the light blocking layer is greater than a Young's modulus of the connection layer.

IPC Classes  ?

• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/60 - Reflective elements

Abstract

A micro light emitting diode display panel including multiple pixel structures is provided. Each of the pixel structures includes at least one sub-pixel, which includes a first micro-light-emitting chip with a first light-emitting area and a second micro-light-emitting chip with a second light-emitting area smaller than the first light-emitting area. The first micro-light-emitting chip emits light corresponding to a first luminance interval according to a first operating current interval. The second micro light-emitting chip emits light corresponding to a second luminance interval according to a second operating current interval. A gray-scale value of the second luminance interval is lower than a gray-scale value of the first luminance interval. The first micro-light-emitting chip and the second micro light-emitting chip have the same light-emitting color. The second micro-light-emitting chip has a smaller slope of a tangent line to a luminance versus current curve than the first micro-light-emitting chip.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix

Abstract

A micro-electronic element transfer apparatus including a first conveyer portion, a second conveyer portion, and a light source device is provided. The first conveyer portion is configured to output a plurality of micro-electronic elements. The second conveyer portion includes a first rolling component and a substrate. The substrate is disposed on the first rolling component and is moved through rolling of the first rolling component. A plurality of bumps are disposed on the substrate. The light source device is configured to irradiate the bumps for heating, and the bumps generate a phase transition. When the micro-electronic elements are outputted from the first conveyer portion, a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps. The micro-electronic elements are respectively bonded to the bumps. A micro-electronic element transfer method is also provided.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/64 - Heat extraction or cooling elements

Abstract

A display panel includes a pixel unit. The pixel unit includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first light-emitting element, a first light source element, and a first color conversion structure. A light emitted by the first light-emitting element has a first color. The first color conversion structure is disposed on the first light source element and adapted to convert a light emitted by the first light source element into a light of the first color. The second sub-pixel includes a second light-emitting element. A light emitted by the second light-emitting element has a second color different from the first color.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate around a rotating axis of the rotating stage. The plurality of first heaters is disposed under a first heating region, each have a first width Wa. There is a first spacing Sa between any two adjacent first heaters. The at least one second heater is disposed under a second heating region, and has a second width Wb. There is a smallest spacing Sab between the at least one second heater and the first heating region, and Wa, Wb, Sa and Sab satisfy the equation: Wa/(Wa+Sa) ≥ Wb/(Wb+Sab). Each wafer carrier overlaps the first heating region in the axial direction of the rotating axis.

IPC Classes  ?

• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for heating the substrate
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

A micro light emitting diode structure including an epitaxial structure, an electrode layer, a barrier layer and a bonding layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. The bonding layer is disposed on the barrier layer and away from the electrode layer.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A micro light emitting diode structure including an epitaxial structure, an electrode layer and a barrier layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is greater than and covers an orthogonal projection area of the electrode layer on the epitaxial structure.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro element structure including a body, two electrodes, two solder patterns and a confinement structure is provided. The two electrodes are disposed on a side of the body. The two solder patterns are disposed on the two electrodes, respectively. The confinement structure protrudes relative to the body, wherein the confinement structure surrounds one of the electrodes and the solder pattern thereon, and at least a portion of the confinement structure is separated from the surrounded solder pattern with a gap. A display device is also provided.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A micro light-emitting diode includes a first stacked layer, a second stacked layer, a third stacked layer, a bonding layer, at least one etch stop layer, and a plurality of electrodes. The second stacked layer is disposed between the first stacked layer and the third stacked layer. The first stacked layer includes a first active layer. The second stacked layer includes a second active layer. The third stacked layer includes a third active layer. The bonding layer is disposed between the second stacked layer and the third stacked layer. The at least one etch stop layer is at least disposed between the first active layer and the second active layer. The plurality of electrodes are respectively electrically connected with the first stacked layer, the second stacked layer, and the third stacked layer. At least one electrode of the plurality of electrodes contacts the etch stop layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A micro light-emitting diode includes an epitaxial structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, and has a first ion implantation region. A first distance is present between a surface of the first type semiconductor layer and a top surface of the light-emitting layer adjacent to the surface. A second distance is present between the surface of the first type semiconductor layer and a first bottom side of the first ion implantation region. The second distance is greater than the first distance and less than a height of a mesa. A first included angle having an absolute value between 0 and 15 degrees is present between a first extension direction of a first inner side of the first ion implantation region and a normal direction of the light-emitting layer.

IPC Classes  ?

• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

Micro light emitting diode inspection and repairing equipment including a carrying stage, an optical inspection module and an injection device is provided. The optical inspection module is arranged corresponding to the carrying stage to capture image information and obtain a position coordinate from the image information. The injection device is adapted to move to a target position of the carrying stage according to the position coordinate. The injection device includes a tube and a nozzle. The tube includes a first portion and a second portion connected to the first portion. The extending direction of the first portion is different from the extending direction of the second portion. A fluid blows to the target position after passing through the tube and the nozzle. An inspection and repairing method adopting the micro light emitting diode inspection and repairing equipment is also provided.

IPC Classes  ?

• G01R 31/26 - Testing of individual semiconductor devices
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A micro light-emitting diode display device includes a display substrate, multiple pixels, and at least one color conversion layer. The pixels are disposed on the display substrate. Each of the pixels includes multiple sub-pixels. Each of the sub-pixels includes at least one micro light-emitting diode. The at least one color conversion layer is disposed on the pixels. The at least one color conversion layer is continuously disposed on at least a part of sub-pixels of different pixels along a same direction.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/50 - Wavelength conversion elements
• H01L 33/58 - Optical field-shaping elements

Abstract

A micro light emitting diode includes an epitaxial structure, a first electrode, a second electrode, at least one via and an insulating layer. The epitaxial structure has a surface and includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer. The first electrode and the second electrode are respectively disposed on the surface of the epitaxial structure. The second electrode is located outside around the first electrode and symmetrically disposed with respect to a geometric center of a bonding surface of the epitaxial structure. The via extends from the second-type semiconductor layer to the first-type semiconductor layer. The insulating layer is disposed on the second-type semiconductor layer together with the first electrode. The insulating layer extends to cover an inner wall of the via, and the via is non-symmetrically disposed with respect to the geometric center of the bonding surface of the epitaxial structure.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A micro LED display device includes a circuit substrate, an epitaxial structure layer and a metal reflective layer. The circuit substrate includes a display area and a non-display area adjacent to the display area. The epitaxial structure layer includes a first surface facing the circuit substrate, a second surface away from the circuit substrate, and a plurality of ion implantation regions facing the circuit substrate. The ion implantation regions define a plurality of micro LED units spaced apart from each other. The first surface is a planar surface within the display area, and each groove in the second surface corresponds to one of the ion implantation regions. The metal reflective layer includes a plurality of reflective portions corresponding to the grooves. The reflective portions define a plurality of light transmission regions, and each light transmission region corresponds to one of the micro LED units.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/50 - Wavelength conversion elements

Abstract

A display panel and a manufacturing method thereof are provided. The display panel includes a circuit substrate and a plurality of micro light-emitting diode structures. The micro light-emitting diode structures each include a micro light-emitting chip and a molding structure. The micro light-emitting chip is electrically bonded to the circuit substrate, and includes a first surface, a second surface, and a peripheral surface. The first surface is located on a side of the micro light-emitting chip facing the circuit substrate. The second surface is disposed opposite to the first surface. The peripheral surface connects the first surface and the second surface. The molding structure surrounds the peripheral surface and encloses the second surface of the micro light-emitting chip. The molding structure extends in a direction away from the circuit substrate and forms an inner side wall. The inner side wall and the second surface constitute an accommodating portion.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A micro LED display device includes: a substrate; a plurality of micro light-emitting diodes disposed on the substrate; and a reflective layer and a black layer sequentially stacked on the substrate. The reflective layer and the black layer cover a surface of the substrate, wherein a top surface of the plurality of micro light-emitting diodes is exposed through the reflective layer and the black layer. A plurality of reflective banks and a plurality of black banks are sequentially disposed on the black layer and exposing the plurality of micro light-emitting diodes; and a color-conversion material covers the top surface of at least one of the plurality of micro light-emitting diodes. The color-conversion material is laterally disposed between the plurality of reflective banks. The reflective layer, the black layer, the plurality of reflective banks, and the plurality of black banks overlap each other in a display direction.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/60 - Reflective elements
• H01L 33/50 - Wavelength conversion elements

Abstract

A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

An exposure apparatus including a micro light emitting diode display unit and a first projection optical system is provided. The micro light emitting diode display unit has a plurality of micro light emitting diodes. The micro light emitting diode display unit is adapted to individually control light emission signals of the micro light emitting diodes and forming a predetermined pattern. The first projection optical system is disposed on a light emitting path of the micro light emitting diode display unit. The first projection optical system is configured to form an exposure pattern on a photosensitive material layer at once by applying the predetermined pattern.

IPC Classes  ?

• G03F 7/213 - Exposing with the same light pattern different positions of the same surface at the same time
• G03F 7/20 - Exposure; Apparatus therefor

Abstract

A micro LED display panel is provided. The micro LED display panel includes a driving substrate and a plurality of bonding pads disposed on the driving substrate and spaced apart from each other. The micro LED display panel also includes a plurality of micro LED structures electrically connected to the bonding pads. Each micro LED structure includes at least one electrode disposed on the side of the micro LED structure facing the driving substrate. The electrode has a normal contact surface and a side contact surface. The normal contact surface faces the driving substrate, and the side contact surface is laterally connected to the corresponding bonding pad.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

The micro-LED display device provided includes a substrate having a first circuit layer and a second circuit layer; a first pad on the first circuit layer and a second pad on the second circuit layer; a plurality of micro-LEDs, wherein each of the micro-LEDs includes a first electrode connected to the first pad and a second electrode connected to the second pad; a first bonding support layer disposed between the first and second pad and in direct contact with the substrate and the micro-LED; and a plurality of second bonding support layers, wherein each of the second bonding support layers includes a lower portion and a upper portion over the lower portion, wherein both portion are disposed between and in lateral contact with adjacent two of the micro-LEDs, and an optical density of the lower portion is greater than that of the upper portion under the same thickness.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

A micro LED transparent display has a first display surface and a second display surface, which are opposite to each other. The micro LED transparent display includes a substrate, pixels and at least one grating layer. The first display surface and the second display surface are located on two opposite sides of the substrate, respectively. The pixels are arranged in arrays on the substrate, each of the pixels includes micro LEDs, and the micro LEDs are electrically connected to the substrate. The grating layer is disposed on the substrate, and the micro LEDs are located between the grating layer and the substrate. Lights generated from the micro LEDs of the pixels can be controlled by the grating layer, and the lights partially penetrate through the first display surface and are partially reflected and penetrate through the second display surface.

IPC Classes  ?

• G02F 1/1333 - Constructional arrangements
• G02F 1/155 - Electrodes
• G02F 1/157 - Structural association of cells with optical devices, e.g. reflectors or illuminating devices
• G02F 1/13357 - Illuminating devices
• H01L 33/42 - Transparent materials
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting diode package structure including a first base layer, a second base layer and a display unit is provided. The second base layer is disposed on the first base layer and has an opening. The opening exposes a part of the first base layer, and the opening and the exposed first base layer define a containing groove. The display unit is disposed in the containing groove, and the display unit includes a control circuit board and a micro light-emitting diode assembly. The micro light-emitting diode assembly is disposed on the control circuit board and electrically connected to the control circuit board.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

A micro LED display device is provided. The micro LED display device includes a substrate having a display region, a plurality of micro LED structures disposed inside the display region and arranged in an array, and a plurality of light-converting structures disposed on some micro LED structures. The micro LED display device also includes a positioning frame disposed outside the display region and an isolation frame surrounding the positioning frame. The water vapor transmission rate of the isolation frame is lower than the water vapor transmission rate of the positioning frame. The micro LED display device further includes a cover plate disposed on the substrate and connected to the substrate by the positioning frame and the isolation frame.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/50 - Wavelength conversion elements
• H01L 33/54 - Encapsulations having a particular shape

Abstract

A micro light-emitting diode display device including a circuit substrate, an epitaxy structure and a conducting layer is provided. The epitaxy structure is electrically connected to the circuit substrate, and includes a connection layer and a plurality of light-emitting mesas. The plurality of light-emitting mesas are disposed on the connection layer, wherein a thickness of the connection layer is less than a thickness of the plurality of light-emitting mesas, and the connection layer has a first surface exposed by the plurality of light-emitting mesas and a second surface opposite to the first surface. The conducting layer is disposed on the second surface of the connection layer and exposes a plurality of sub-areas of the second surface, wherein a vertical projection of the conductive layer onto the connection layer overlaps a vertical projection of the first surface onto the connection layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro LED display device includes a circuit substrate, an epitaxial structure layer, a metal conductive layer, a light conversion layer and a light-shielding structure. The epitaxial structure layer includes a first surface, a second surface, and a plurality of micro LED units separated from each other. The micro LED units are electrically connected to the circuit substrate. The metal conductive layer is disposed on the second surface and directly contacts the epitaxial structure layer, and has a plurality of light conversion region each corresponds to one of the micro LED units. The light conversion layer is disposed in a part of the light conversion regions. The light-shielding structure does not cover the light conversion regions. In the direction perpendicular to a bonding surface of the circuit substrate, the thickness of the metal conductive layer is greater than that of the epitaxial structure layer.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/60 - Reflective elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

An epitaxial structure includes a quantum well structure, a first type semiconductor layer, and a second type semiconductor layer. The quantum well structure has an upper surface and a lower surface opposite to each other and includes at least one quantum well layer and at least one quantum barrier layer stacked alternately. The quantum well layer includes at least one patterned layer, and the patterned layer includes multiple geometric patterns. The first type semiconductor layer is disposed on the lower surface of the quantum well structure. The second type semiconductor layer is disposed on the upper surface of the quantum well structure.

IPC Classes  ?

• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Abstract

A light-emitting unit includes a multilayer circuit structure, a plurality of display pixels, and at least one compensation pixel. The multilayer circuit structure includes a top circuit layer and a bottom circuit layer. The display pixels are arranged into an N×M pixel array along a first direction and a second direction. Each of the display pixels includes a plurality of sub-pixels. The sub-pixels are disposed on the top circuit layer of the multilayer circuit structure. The compensation pixel is disposed on the top circuit layer of the multilayer circuit structure and electrically bonded to the multilayer circuit structure. The compensation pixel is located between the display pixels. The number of the compensation pixel is less than the number of the display pixels. Extension lines in the first direction and the second direction do not pass through the compensation pixel. A display apparatus is also provided.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro device mass transfer equipment including a base stage, a moving stage, a substrate stage, a laser device, a rolling and pressing mechanism, and a heating mechanism is provided. The moving stage is movably disposed on the base stage, and moves with a moving path. The substrate stage is movably disposed on the base stage, and is adapted to move between different positions overlapping the moving stage. The laser device is movably disposed on the base stage. The laser device is adapted to move relative to the substrate stage, and emits a laser beam toward the substrate stage. The rolling and pressing mechanism is disposed on the moving path of the moving stage, and forms a contact region with the moving stage. The heating mechanism is disposed corresponding to the contact region, and is adapted to heat the contact region between the moving stage and the rolling and pressing mechanism.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

Mass transfer equipment including a base stage, a first substrate stage, a second substrate stage, at least one laser head and a servo motor module is provided. The first substrate stage is adapted to drive a target substrate to move along a first direction. The second substrate stage is adapted to drive at least one micro device substrate to move along a second direction. The at least one laser head is adapted to move to a target position of the second substrate stage and emits a laser beam toward the at least one micro device substrate. At least one micro device is separated from a substrate of the at least one micro device substrate and connected with the target substrate after the irradiation of the laser beam. The servo motor module is used for driving the first substrate stage, the second substrate stage and the at least one laser head to move.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A micro LED display device includes an epitaxial structure layer, a connection layer, a light conversion layer and a transparent layer. The epitaxial structure layer includes a plurality of micro LEDs disposed apart from each other. The connection layer is disposed at one side of the epitaxial structure layer away from the micro LEDs. The light conversion layer is fixed on the epitaxial structure layer through the connection layer and includes a plurality of light conversion portions. Each of the light conversion portions corresponds to one of the micro LEDs. The transparent layer is disposed at one side of the light conversion layer away from the epitaxial structure layer. The ratio of the thickness of the transparent layer to the width of each light conversion portion is between 0.1 and 40. A manufacturing method of the micro LED display device is also provided.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A micro light-emitting display device having multiple display regions is provided. The micro light-emitting display device includes a substrate, multiple micro light-emitting elements, and multiple first light-emitting auxiliary structures. The micro light-emitting elements are disposed on the substrate, and positions of the micro light-emitting elements define ranges of the display regions. The micro light-emitting elements have a same first pitch between each other in any one of the display regions. The micro light-emitting elements have a second pitch between each other at a boundary across any two adjacent display regions. The first pitch is different from the second pitch. The light-emitting auxiliary structures are respectively disposed on the micro light-emitting elements. The light-emitting auxiliary structures have a same third pitch between each other.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor

Abstract

A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode and a conductive layer. The epitaxial structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The first-type semiconductor layer includes a first portion and a second portion. A bottom area of the first portion is smaller than a top area of the second portion. A thickness of the second portion is greater than 10% of a thickness of the first-type semiconductor layer. The first electrode is disposed on the epitaxial structure and located on the first portion of the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure. The conductive layer is disposed between the first electrode and the first portion, wherein an orthographic projection area of the conductive layer on the first portion is greater than or equal to 90% of an area of the first portion.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

IPC Classes  ?

• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A micro LED display panel and a pixel driving circuit thereof. The pixel driving circuit is used for driving a light-emitting unit, which includes a plurality of micro LEDs connected in series. The pixel driving circuit includes a switch unit, a driving unit and a selection unit. The switch unit controls a data signal input according to a scan signal. The driving unit is electrically connected to the switch unit and the light-emitting unit, and is electrically connected to a first voltage. The selection unit receives a selection signal and is electrically connected to a second voltage. The selection unit is electrically connected to the micro LEDs and the driving unit. The number and brightness of the micro LEDs to be turned on are controlled by the selection unit and the driving unit according to the selection signal and the data signal.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A micro-LED display device mainly has a plurality of pixel areas arranged in matrix and a driving circuit. Each pixel area has a plurality of sub-pixel areas arranged adjacent to each other. In a first driving mode, the driving circuit enables the rows of pixel areas in sequence. When one of rows of pixel areas is enabled, the driving circuit controls one sub-pixel area of each pixel area on the enabled row of pixel areas to display an image color. In a second driving mode, the rows of pixel areas are also enabled in sequence. When one of rows of pixel area is enabled, the driving circuit drives all sub-pixel areas of each pixel area on the enabled row of pixel area to synchronously display the same image color. Therefore, a high-brightness requirement is met, and the overall power consumption is not increased.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

A micro light emitting diode panel, including a circuit substrate, multiple transistor elements, and multiple micro light emitting diodes, is provided. The circuit substrate includes multiple signal lines, multiple bonding pads, and multiple thin film transistors. The bonding pads extend from at least part of the signal lines. The transistor elements are electrically bonded to a part of the bonding pads and are electrically connected to the thin film transistors. The micro light emitting diodes are electrically bonded to another part of the bonding pads and are electrically connected to the thin film transistors. The thin film transistors each have a first semiconductor pattern. The transistor elements each have a second semiconductor pattern. An electron mobility difference between the first semiconductor pattern and the second semiconductor pattern is greater than 30 cm2/V·s. A method of fabricating the micro light emitting diode panel is also provided.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 108/cm2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.

IPC Classes  ?

• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/42 - Transparent materials
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

An epitaxial semiconductor structure including a substrate, a semiconductor layer, and a balance structure is provided. The substrate has a first surface and a second surface opposite to each other. The semiconductor layer is formed on the first surface. The balance structure is formed on the second surface, the balance structure is configured to balance the thermal stress on the substrate, and the balance structure is composed of a plurality of non-continuous particulate materials. An epitaxial substrate is also provided.

IPC Classes  ?

• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

Abstract

A micro light-emitting diode display device includes a circuit substrate and a plurality of display pixels. The display pixels are arranged on the circuit substrate and are respectively electrically connected to the circuit substrate. Each display pixel includes a plurality of micro light-emitting elements. In each display pixel, a part of the micro light-emitting elements form at least one series-connection structure, and the micro light-emitting elements of the series-connection structure are within a wavelength range of the same lighting color. The circuit substrate respectively provides a same driving voltage to drive the micro light-emitting elements included in the series-connection structure of each display pixel and the micro light-emitting elements excluded from the series-connection structure.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting device includes an epitaxial structure. The epitaxial structure has a bottom surface and includes a plurality of grooves, and the grooves are located on the bottom surface. Each of the grooves includes a plurality of sub-grooves, and the sub-grooves define an inner wall of each of the grooves. A ratio of a size of each of the grooves to a size of each of the sub-grooves is greater than 1 and less than or equal to 4000.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A semiconductor structure disposed on a temporary carrier board is provided. Multiple adhesive layers are disposed on the temporary carrier. The semiconductor structure includes an adhesive-layer structure and a micro light-emitting element. The adhesive-layer structure includes a mending adhesive layer and a buffer layer. The mending adhesive layer is disposed on the temporary carrier board. The micro light-emitting element is disposed on the mending adhesive layer. The buffer layer is disposed between the mending adhesive layer and the micro light-emitting element. A height of the mending adhesive layer is less than a height of each of the adhesive layers in a thickness direction of the temporary carrier board. A sum of the height of the mending adhesive layer and the height of the buffer layer is greater than or equal to a height of each of the adhesive layers.

IPC Classes  ?

• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

An LED micro display device includes a circuit substrate, micro light-emitting elements, an insulating layer, and a common electrode layer. The circuit substrate has conductive patterns. The micro light-emitting elements are bonded to the circuit substrate and disposed corresponding to the conductive patterns. Each micro light-emitting element has a bottom surface, a top surface and a side wall. The bottom surface connects to the corresponding conductive pattern. The side wall has a first sidewall portion adjacent to the circuit substrate and a second sidewall portion connected to the first sidewall portion. The insulating layer is disposed on the circuit substrate, covers first sidewall portions, and exposes second sidewall portions. The common electrode layer covers the insulating layer and second sidewall portions. The common electrode layer is electrically connected to the micro light-emitting elements, contacts the second sidewall portions, and exposes the top surfaces.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/50 - Wavelength conversion elements
• H01L 33/58 - Optical field-shaping elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting component, a micro light-emitting structure and a display device are disclosed. The micro light-emitting component has a micro light-emitting chip and a buffer element. The micro light-emitting chip has a first surface, a second surface opposite to the first surface and a plurality of outer sidewalls. The buffer element is disposed on the outer sidewalls or the first surface of the micro light-emitting chip. The buffer element has an inner surface and an outer surface. An angle is defined between the inner surface and the first surface or an extended surface of the first surface. The angle is greater than or equal to 90 degrees and less than or equal to 180 degrees. Therefore, the buffer element prevents the first surface of the micro light-emitting chip from damaging by collision when the micro light-emitting chip is dropped with the first surface facing down during a transferring procedure.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/54 - Encapsulations having a particular shape

Abstract

A semiconductor wafer carrier structure includes a carrier body having a surface; a protective film covering the surface; a susceptor disposed on the carrier body; and a patterned coating film on the susceptor, wherein the patterned coating film has two or more different thicknesses, wherein patterns of the patterned coating film are symmetrically distributed with respect to a center of the susceptor.

IPC Classes  ?

• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the deposition of metallic material from metallo-organic compounds
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/54 - Apparatus specially adapted for continuous coating

Abstract

A semiconductor wafer carrier structure is provided. The semiconductor wafer carrier structure includes a susceptor and a patterned heat conduction part disposed on the susceptor. At least a portion of the patterned heat conduction part has a different heat conduction coefficient than the susceptor. A metal-organic chemical vapor deposition equipment is also provided. The metal-organic chemical vapor deposition equipment includes a carrier body having a plurality of carrier units. The above semiconductor wafer carrier structure is placed in at least one of the carrier units.

IPC Classes  ?

• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the deposition of metallic material from metallo-organic compounds

Abstract

A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes an epitaxial layer. The micro light-emitting diode structure also includes a reflecting layer disposed on the epitaxial layer. The micro light-emitting diode structure further includes a patterned electrode layer disposed between the epitaxial layer and the reflecting layer. The patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other. Moreover, the micro light-emitting diode structure includes a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/42 - Transparent materials
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting diode display panel including first and second substrates, micro light-emitting diodes, a wavelength conversion layer, a light-shielding pattern layer, a light filter layer, and an air gap is provided. The micro light-emitting diodes are disposed on the first substrate and respectively located in a plurality of sub-pixel areas. The micro light-emitting diodes are adapted to emit a light beam. The wavelength conversion layer is overlapped with at least a portion of the micro light-emitting diodes. The light beam is used to excite the wavelength conversion layer to emit a converted light beam. The light filter layer is disposed between the wavelength conversion layer and the second substrate and overlapped with the micro light-emitting diodes. The air gap is disposed between any two adjacent ones of any one of the micro light-emitting diodes, the second substrate, the wavelength conversion layer, and the light filter layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/50 - Wavelength conversion elements

Abstract

A micro light emitting device structure includes a substrate, a connecting layer, a micro light emitting device and a covering layer. The connecting layer is connected to the substrate. The micro light emitting device is removably connected to the connecting layer, and includes a semiconductor epitaxial structure and two electrodes. The semiconductor epitaxial structure has an outer surface. The electrodes are disposed on a first surface of the outer surface of the semiconductor epitaxial structure, or disposed on the first surface of the outer surface of the semiconductor epitaxial structure and a second surface of the semiconductor epitaxial structure away from the first surface, respectively. The covering layer is disposed on the outer surface of the semiconductor epitaxial structure.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A micro LED display device is provided. The micro LED display device includes a substrate. The micro LED display device also includes a first micro LED disposed on the substrate. The micro LED display device further includes at least one first refraction structure disposed on and corresponding to the first micro LED. Moreover, the micro LED display device includes a second micro LED disposed on the substrate and adjacent to the first micro LED. The micro LED display device also includes at least one second refraction structure disposed on and corresponding to the second micro LED.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/60 - Reflective elements
• G02B 3/08 - Simple or compound lenses with non-spherical faces with discontinuous faces, e.g. Fresnel lens

Abstract

2/V·s. The micro light emitting diode devices are bonded to the circuit substrate, and are electrically connected to the transistor devices respectively.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages

Abstract

A light-emitting element including an epitaxial structure and a light guide structure is provided. The epitaxial structure has a first surface and a second surface opposite to each other and includes an active layer. The light guide structure is disposed on the first surface of the epitaxial structure and includes a first light reflection layer and a filter layer covering on an upper surface of the first light reflection layer. The first light reflection layer completely covers the first surface. A display panel is also provided.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/58 - Optical field-shaping elements
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and at least one first air gap is provided. The substrate has a plurality of connection pads. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the substrate and each of the micro light emitting devices. The at least one first air gap is disposed between the substrate and a surface of the isolation layer facing the substrate.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 31/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
• H01L 31/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

Micro device optical inspection and repairing equipment adopting an adhesion device is provided. The micro device optical inspection and repairing equipment includes a carrying stage, an optical inspection module and at least one adhesion device. The optical inspection module is arranged corresponding to the carrying stage so as to capture image information and obtain a position coordinate from the image information. The adhesion device includes a main body and an adhesive portion. The adhesive portion is connected to the main body. The adhesion device can move to a target position of the carrying stage according to the position coordinate. The main body is adapted to drive the adhesive portion to move to the target position along a moving axis. An optical inspection and repairing method adopting the micro device optical inspection and repairing equipment is also provided.

IPC Classes  ?

• H01L 21/66 - Testing or measuring during manufacture or treatment
• G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A selectable-repairing micro light emitting diode display is provided. A backplane includes a plurality of transistor units. A plurality of pixel units are disposed on the backplane, and each of the pixel units includes a plurality of original sub-pixel units and at least one selectable-repairing sub-pixel unit. Each of the original sub-pixel units includes a set of original pad. The set of original pad is disposed on the backplane and connected to one of the transistor units. The at least one selectable-repairing sub-pixel unit is arranged between two of the original sub-pixel units next to each other and having different colors, and includes a set of repairing pad. The set of repairing pad is not connected to the transistor units. A plurality of micro light emitting elements are electrically connected to the sets of original pad and controlled to emit light through the corresponding transistor units, respectively.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A micro light-emitting diode (LED) display panel including a substrate, a first micro LED, a first light-shielding wall, a second micro LED, and a second light-shielding wall is provided. The substrate includes a plurality of pixel regions arranged in an array. The first micro LED is disposed on one of the pixel regions of the substrate. The first light-shielding wall is disposed on the substrate and located beside the first micro LED. The second micro LED is disposed on the one of the pixel regions of the substrate and located beside the first micro LED. The second light-shielding wall is disposed on the substrate and located beside the second micro LED. A light wavelength of the first micro LED is different from a light wavelength of the second micro LED. A height of the first light-shielding wall is smaller than a height of the second light-shielding wall.

IPC Classes  ?

• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A micro light-emitting diode display panel includes a substrate, at least one light-emitting element, a reflective layer and a light-absorbing layer. The at least one light-emitting element is disposed on the substrate to define at least one pixel, and each light-emitting element includes micro light-emitting diodes. The reflective layer is disposed on the substrate and located between the micro light-emitting diodes. The reflective layer has cavities surrounding the micro light-emitting diodes, such that a thickness of a portion of the reflective layer close to any one of the micro light-emitting diodes is greater than a thickness of a portion of the reflective layer away from the corresponding micro light-emitting diode. The light-absorbing layer is at least disposed in the cavities of the reflective layer.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group