A blood pressure measurement device includes a substrate, a protrusion portion, an image sensor, a first light source, a second light source, and a control and processing unit. The first light source projects a first light toward the base plat. A finger presses the protrusion portion, and the image sensor captures an image of a bright area. The processing unit calculates a number of light-receivable pixels of image sensor and compares with a number of pixels able to receive light of image sensor to obtain a ratio value, and determines whether the finger has enough pressure. The second light source projects a second light toward the substrate, penetrating the substrate and the finger skin to be reflected by a blood vessel. The image sensor captures an image of a changed volume of the blood vessel, and the control and processing unit calculates the systolic or diastolic pressure.
A dynamic vision sensor includes a sensor and an image signal processor. The sensor includes a pixel driver, a plurality of pixel groups, a cluster differential ADC, a cluster memory, a sensor data interface, and a controller. Each of the pixel groups includes a plurality of pixels and a floating diffusion node, each of the pixels includes a photodiode and a switch, the switch controls whether the electric charges accumulated in the photodiode are transferred to the floating diffusion node, the switch in each of the pixels is controlled by the pixel driver, and each of the pixels within a single pixel group is coupled to the floating diffusion node. The controller controls the pixel driver, the cluster differential ADC, the cluster memory, and the sensor data interface to switch between a dynamic sensing mode and a 2D image sensing mode.
A full-screen display device has unit pixels having function for emitting and receiving light, including a water-oxygen barrier layer, a protective panel, a plurality of unit pixels, a light-shielding layer, and a plurality of lens. At least one of the unit pixels has a light-emitting area inside the unit pixels, and has a light-sensing area inside or outside the unit pixels. For biometrics recognition, the light-emitting area emits an incident light, which penetrates through the water-oxygen barrier layer and scatters outwardly by at least one of the lenses. The scattered incident light penetrates through the protective panel, and is reflected by a test object. The reflected light penetrates through the protective panel and is converged by at least one of the lenses. The converged reflected light penetrates through the water-oxygen barrier, and the light-sensing area receives and converts the reflected light to an image electrical signal.
G06F 21/32 - User authentication using biometric data, e.g. fingerprints, iris scans or voiceprints
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H10K 59/65 - OLEDs integrated with inorganic image sensors
A full-screen display device has different unit pixels for emitting and receiving light, including a water-oxygen barrier layer, a protective panel, a plurality of unit pixels, a light-shielding layer, and a plurality of lenses. When the device performs biometric recognition, at least one unit pixel is defined as a light-emitting element, at least one unit pixel is defined as a sensing element, and the sensing element has a light-sensing area. The light-emitting element emits an incident light to penetrate the water-oxygen barrier layer and scatter outwardly by at least one lens. The scattered incident light penetrates the protective panel, and is then reflected by a test object, followed by penetrating the protective panel, and entering at least one lens, which converges the reflected light. The converged light penetrates the water-oxygen barrier layer to be received by the light-sensing area and converted into an image electrical signal.
G06F 21/32 - User authentication using biometric data, e.g. fingerprints, iris scans or voiceprints
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H10K 59/65 - OLEDs integrated with inorganic image sensors
Provided is behavior image sensor system, including a first image capturing unit and a control unit. The first image capturing unit is used for capturing a moving image. The control unit is electrically connected to the first image capturing unit, receives the moving image, and calculates a moving track of a moving object in the moving image, thereby determining whether the moving track of the moving object conforms to a particularly dangerous behavior pattern. As such, the behavior image sensor system does not need to capture a static image of a static object completely and determine a behavior pattern of the static object, so that the behavior image sensor system may reduce the quantity of data a lot and is suitable for all kinds of environment.
G06V 10/74 - Image or video pattern matchingProximity measures in feature spaces
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
A display device includes a display panel having a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a display phase of the pixel circuit for light-emitting and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit to generate a sensing voltage; a driving transistor for driving the diode during the display phase; a readout transistor, with a gate receiving the sensing voltage during the sensing phase to serve as a source follower; first to seventh transistors, gate control signals applied to the gates of the first to seventh transistors so that the pixel circuit switches between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
G09G 3/3275 - Details of drivers for data electrodes
The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a display phase of the pixel circuit for light-emitting and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit for light-sensing; a driving transistor for driving the diode during the display phase and serving as a source follower in the sensing phase; first to sixth transistors, applied to the gates of the first to sixth transistors respectively so that the pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase and storing the charge accumulated by the diode in the sensing phase.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
G09G 3/3275 - Details of drivers for data electrodes
8.
DYNAMIC IMAGE GENERATING METHOD AND DYNAMIC IMAGE SENSOR THEREOF
The present invention relates to a dynamic image generating method and a dynamic image sensor thereof. The dynamic image sensor includes a first exposure pixel, a second exposure pixel and an image processing module. The dynamic image sensor applies the dynamic image generating method, which generates the default short-exposure image signal by exposing the first exposure pixel for default short-exposure time, and exposing the second exposure pixel for default long-exposure time to generate the default long-exposure image signal. The image processing module confirms whether the default short-exposure image and the default long-exposure image signals are between the lower and upper limits of pinching. If so, the optimal short-exposure time and the optimal long-exposure time are generated; otherwise, increase the default short-exposure time by a short-exposure fixed value or decrease the default long-exposure time by a long-exposure fixed value, and repeat until the optimal short-exposure and long-exposure times are obtained.
H04N 23/741 - Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
H04N 23/73 - Circuitry for compensating brightness variation in the scene by influencing the exposure time
H04N 23/76 - Circuitry for compensating brightness variation in the scene by influencing the image signals
H04N 25/58 - Control of the dynamic range involving two or more exposures
The present invention relates to a method of image fusion, which uses the brightness difference of the current frame and the previous frame to determine whether the pixel in a frame image is static or dynamic. If the current pixel is static, the previous corresponding pixel is superimposed onto the current pixel; if the current pixel is dynamic, the previous corresponding pixel is replaced with the current pixel.
A LiDAR system includes a microcontroller, a laser light source, a lens module, and a receiver. The lens module includes a receiver lens module and a laser beam splitter module. The laser beam splitter module includes a diffractive optical element and a collimation lens assembly. The laser light source emits a plurality of laser beams with different wavelengths and includes a light coupler. The light coupler optically couples the laser beams into a collimated light signal. In a sensor shutter time of each subframe in a frame, a plurality of pixels of the receiver receive at least one reflective light signal of the laser light with different wavelengths to obtain a plurality of subframes of environmental images, and takes a distance value represented by the reflective light signals as a distance value of the pixels of the subframe, the microcontroller fuses the distance values of the pixels of the plurality of subframes of the environmental images as a final distance value of the frame.
A LiDAR system includes a microcontroller, a laser light source, a lens module, and a receiver. The lens module includes a laser beam splitter module and a receiver lens module, the laser beam splitter module receiving a laser light and diffracting the laser light into multiple diffractive lights emitted toward a target. The receiver lens module receives a reflective light signal of the diffractive lights reflected from the target and emits the reflective light signal towards the receiver. A frame of the LiDAR system includes a plurality of subframes. The microcontroller compares the average distance values at the same sampling area of each subframe within the frame, eliminates the subframes with abnormal average distance values, and fuses the other subframes with similar average distance values as a final distance value of the frame.
A bioassay device with evenly dispersed carriers includes an image sensor unit, a plurality of microstructures and a first EWOD device. The image sensor unit includes a substrate and a plurality of unit pixels, the substrate has a light-receiving surface, the plurality of unit pixels are disposed in the substrate and close to the light-receiving surface, and each unit pixel has a photoelectric conversion unit. The plurality of microstructures is disposed on the light-receiving surface and forms a plurality of grooves, and the plurality of grooves is respectively located above the plurality of unit pixels. The first EWOD device includes a plurality of first EWOD electrodes, the plurality of first EWOD electrodes is disposed on the light-receiving surface outside of the grooves, or the plurality of first EWOD electrodes is disposed above the substrate.
Disclosed are an image sensor circuit and an image sensor device including the image sensor circuit device. The image sensor circuit includes a pixel array formed by a plurality of pixel circuits. Each pixel circuit includes a first sub-pixel circuit, a first control circuit, a second sub-pixel circuit and a second control circuit. The first control circuit may sense light in a first wavelength range and control the first sub-pixel circuit to output a first output information at a first frame rate. The second control circuit may sense light in a second wavelength range and control the second sub-pixel circuit to output a second output information at a second frame rate. The first frame rate is higher than the second frame rate, and the first wavelength range does not overlap with the second wavelength range.
H04N 23/13 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths with multiple sensors
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
H04N 23/52 - Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
H04N 23/70 - Circuitry for compensating brightness variation in the scene
H04N 23/73 - Circuitry for compensating brightness variation in the scene by influencing the exposure time
H04N 23/74 - Circuitry for compensating brightness variation in the scene by influencing the scene brightness using illuminating means
H04N 23/741 - Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
H04N 23/75 - Circuitry for compensating brightness variation in the scene by influencing optical camera components
H04N 23/76 - Circuitry for compensating brightness variation in the scene by influencing the image signals
H04N 23/80 - Camera processing pipelinesComponents thereof
H04N 23/951 - Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics
H04N 25/13 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
H04N 25/533 - Control of the integration time by using differing integration times for different sensor regions
H04N 25/535 - Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
H04N 25/58 - Control of the dynamic range involving two or more exposures
H04N 25/583 - Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
H04N 25/59 - Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H10D 89/60 - Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
Provided is an image sensor circuit, including a pixel array and a plurality of different control circuits. The pixel array comprises a plurality of pixel circuit groups arranged in an array. Each pixel circuit group comprises a plurality of pixel circuits that generate corresponding sensitivity values over exposure duration. The pixel circuits include a first quantity of first pixel circuits, and a second quantity of second pixel circuits. The plurality of different control circuits are respectively coupled to different pixel circuits to control the exposure duration thereof with different transmission signals. The different control circuits are also set to control different pixel circuits to output photo-sensed values at different frame rates. The image sensor circuit periodically generates the pixel value of each pixel circuit group according to first and second exposure durations, first and second frame rates, and first and second light sensitivity values of each pixel circuit group.
H04N 25/10 - Circuitry of solid-state image sensors [SSIS]Control thereof for transforming different wavelengths into image signals
G06T 3/4015 - Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
G06T 5/50 - Image enhancement or restoration using two or more images, e.g. averaging or subtraction
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H04N 23/13 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths with multiple sensors
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
H04N 23/52 - Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
H04N 23/73 - Circuitry for compensating brightness variation in the scene by influencing the exposure time
H04N 23/74 - Circuitry for compensating brightness variation in the scene by influencing the scene brightness using illuminating means
H04N 23/741 - Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
H04N 23/80 - Camera processing pipelinesComponents thereof
H04N 23/951 - Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics
H04N 25/13 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
H04N 25/533 - Control of the integration time by using differing integration times for different sensor regions
H04N 25/535 - Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
H04N 25/58 - Control of the dynamic range involving two or more exposures
H04N 25/59 - Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
15.
IMAGE SENSING STRUCTURE AND IMAGE SENSING DEVICE COMPRISING THE SAME
The present invention relates to an image sensing structure, including: a sensing circuit, a storage circuit and a processing circuit. The sensing circuit is used to generate multiple sensing signals in different periods; the storage circuit is used to store the sensing signals. The storage circuit sequentially outputs a first sensing signal of a target object in a first period and a second sensing signal of the target object in a second period to the processing circuit. The processing circuit performs dynamic event detection processing through the first sensing signal and the second sensing signal. Also, the present invention relates to an image sensing device including the image sensing structure.
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/535 - Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
The present invention relates to an image sensing device comprising: an image sensing array and an image processing circuit. The image sensing array includes sensing units, and the sensing units respectively generate multiple pieces of pixel data. The multiple pieces of pixel data are generated according to different frame rates under different exposure periods, and include a first pixel data of a first subframe and a second pixel data of a second subframe. The first pixel data is generated by exposing a first exposure period for a first frame rate, and the second pixel data is generated by exposing a second exposure period for a second frame rate. The first frame rate is less than the second frame rate. The first exposure period is greater than the second exposure period, and multiple pieces of the second pixel data are generated during one image capturing operation.
H04N 25/10 - Circuitry of solid-state image sensors [SSIS]Control thereof for transforming different wavelengths into image signals
G06T 3/4015 - Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
G06T 5/50 - Image enhancement or restoration using two or more images, e.g. averaging or subtraction
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H04N 23/13 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths with multiple sensors
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
H04N 23/52 - Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
H04N 23/70 - Circuitry for compensating brightness variation in the scene
H04N 23/73 - Circuitry for compensating brightness variation in the scene by influencing the exposure time
H04N 23/74 - Circuitry for compensating brightness variation in the scene by influencing the scene brightness using illuminating means
H04N 23/741 - Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
H04N 23/75 - Circuitry for compensating brightness variation in the scene by influencing optical camera components
H04N 23/76 - Circuitry for compensating brightness variation in the scene by influencing the image signals
H04N 23/80 - Camera processing pipelinesComponents thereof
H04N 23/951 - Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics
H04N 25/13 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
H04N 25/533 - Control of the integration time by using differing integration times for different sensor regions
H04N 25/535 - Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
H04N 25/58 - Control of the dynamic range involving two or more exposures
H04N 25/583 - Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
H04N 25/59 - Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
17.
IMAGE SENSING DEVICE AND IMAGE SENSING METHOD THEREOF
The present invention relates to an image sensing device comprising: an image sensing array and an image processing circuit. The image sensing array includes sub-array regions used to obtain sensing signals having different exposure period, wherein in a main frame period, the sensing signals include static sensing signals and dynamic sensing signals, the number of the static sensing signals and the dynamic sensing signals are any different positive integers, the static sensing signals are generated at a first frame rate for a first exposure period, and the dynamic sensing signal are generated at a second frame rate for a second exposure period. The image processing circuit analyzes the static sensing signals and the dynamic sensing signals, outputs sub-frames of the sensing signals having the same frame rate in the sub-array region, and fuses the sub-frames each having a different frame rate by a specific ratio to generate a main frame.
H04N 23/13 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths with multiple sensors
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 23/73 - Circuitry for compensating brightness variation in the scene by influencing the exposure time
H04N 23/951 - Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics
G06T 3/40 - Scaling of whole images or parts thereof, e.g. expanding or contracting
18.
IMAGE SENSING DEVICE AND IMAGE SENSING METHOD THEREOF
The invention relates to an image sensing device and an image sensing method thereof. The image sensing device includes: an image sensing array and an image processing circuit. The image sensing array generates multiple pixel data, and the pixel data includes a first pixel data and a second pixel data. The first pixel data is generated by exposing for a first exposure time, the second pixel data is generated by exposing for a second exposure time, and the first exposure time is shorter than the second exposure time. The image processing circuit executes an automatic exposure convergence operation with the first pixel data to generate new exposure parameters for the automatic exposure convergence operation. The second exposure time is adjusted according to the new exposure parameters, so that the second pixel data is pixel data with changed exposure time.
An image sensor and an image sensing method are provided. A readout circuit outputs a first digital sensing signal according to a floating diffusion node voltage of a first pixel circuit reset after a reset stage and a floating diffusion node voltage of a second pixel circuit reset after the reset stage during a reset signal readout period. The readout circuit outputs a second digital sensing signal according to a sensing result of the first pixel circuit and the floating diffusion node voltage of the second pixel circuit reset after the same reset stage during a sensing signal readout period. The image processing circuit judges whether a digital number of at least one of the first digital sensing signal and the second digital sensing signal is abnormal to decide to keep an original digital number, directly set a pixel value, or reset the second digital sensing signal.
H04N 5/335 - Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
An image sensor and an image sensing method are provided. The image sensor includes a first pixel circuit, a second pixel circuit, a ramp signal generating circuit, a comparator, and a signal processing circuit. The first pixel circuit has a first floating diffusion node. The second pixel circuit has a second floating diffusion node. The ramp signal generating circuit respectively provides a first ramp signal and a second ramp signal to the first floating diffusion node and the second floating diffusion node during a dark sun detection period. The comparator receives a first node voltage of the first floating diffusion node and a second node voltage of the second floating diffusion node. The signal processing circuit determines whether to output an output signal and determines whether to overwrite a digital value corresponding to a sensing signal according to whether the comparator is triggered.
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
21.
Chip with automatic clock signal correction and automatic correction method
Disclosed are a chip with automatic clock signal correction and an automatic correction method. The chip includes a transmission interface, an oscillator and a correction logic circuit. The transmission interface provides a first clock signal. The oscillator generates a second clock signal. The correction logic circuit is coupled to the oscillator and the transmission interface, and performs correction operation to count the first clock signal to generate a first clock count value, and count the second clock signal to generate a second clock count value. When the first clock count value is equal to the first count target value, the correction logic circuit stops counting, and calculates a correction value based on the second clock count value and the second count target value. The correction logic circuit outputs the correction value to the oscillator, and the oscillator corrects a frequency of the second clock signal according to the correction value.
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
22.
Receiving a reset signal during a rest period and a ramp signal during a sensing period through the control terminal of the reset transistor in an image sensor and image sensing method
Disclosed are an image sensor and an image sensing method. The image sensor includes a first pixel circuit. The first pixel circuit includes a first driving transistor, a first selection transistor, a first transfer transistor, a first reset transistor and a first sensing unit. A control terminal of the first selection transistor is used for receiving a first selection signal. A control terminal of the first transmitting transistor is used for receiving a first transmitting signal. The image sensing method includes the following steps: receiving a first reset signal during a reset period through a control terminal of the first reset transistor; and receiving a first ramp signal during a sensing period through a control terminal of the first reset transistor.
H04N 5/335 - Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
An image sensor and an operation method thereof are provided. The image sensor includes a first pixel circuit and a ramp signal generator. The first pixel circuit includes a first pixel unit; a first transfer transistor coupled to the first pixel unit and a first floating diffusion node; a first readout transistor coupled to the first floating diffusion node; a first ramp capacitor coupled to the first floating diffusion node and receiving a first ramp signal; and a first reset transistor coupled to the first floating diffusion node and receiving a reset signal. The ramp signal generator is coupled to the first ramp capacitor and configured to provide the first ramp signal. A voltage range or a counting result of the pixel circuit during at least one of a reset period and a readout period has an offset.
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
24.
Image sensor, level shifter circuit, and operation method thereof
An image sensor, a level shifter circuit, and an operation method thereof are provided. The image sensor includes a pixel circuit and a pixel driving circuit. The pixel driving circuit includes first, second, third, fourth, fifth, and sixth transistors. A first terminal of the first transistor is coupled to a first voltage. A first terminal of the second transistor is coupled to the first voltage, and a control terminal of the second transistor is coupled to a control terminal of the first transistor and a second terminal of the first transistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor, and a second terminal of the third transistor is coupled to a ground voltage. A first terminal of the fourth transistor is coupled to a second terminal of the second transistor and an output terminal.
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
An image sensor and an operating method thereof are provided. The image sensor includes a first pixel circuit, a first column readout circuit, and a second column readout circuit. The first pixel circuit includes a first pixel unit, a first transfer transistor, a first reset transistor, a first readout transistor, and a first capacitor. The first column readout circuit includes a first circuit node. The second column readout circuit includes a bias transistor. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to the first circuit node, and a second terminal of the first readout transistor is coupled to the bias transistor.
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
An image sensor and an operation method thereof are provided. The image sensor includes a pixel circuit and a column readout circuit. The pixel circuit includes a pixel unit, a transfer transistor, a reset transistor, a readout transistor and a selection transistor. The column readout circuit includes a first circuit node and a second circuit node. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to a first circuit node, and a second terminal of the first select transistor is coupled to a second circuit node.
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
H04N 25/627 - Detection or reduction of inverted contrast or eclipsing effects
H04N 25/63 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
H04N 25/709 - Circuitry for control of the power supply
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
27.
SURFACE LIGHT SOURCE PROJECTION DEVICE WITH IMPROVED ZERO-ORDER DIFFRACTION
The present invention provides a surface light source projection device with improved zero-order diffraction, which includes a light exit module and a diffractive optical module. Wherein, the diffractive optical module has two micron diffractive layers, the micron diffractive layers include a plurality of microstructures, and the microstructures are provided with a first recess, and the first recess has a first depth and a first outer diameter. The outer diameter of the microstructures is between 5 times and 200 times the incident wavelength of the narrow half-wave width, and the first outer diameter of the first recess is between 0.3 and 0.7 times the outer diameter. As such, a surface light source projection device that can generate a diffraction pattern with uniform spot intensity and can illuminate for a long time is provided.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
28.
Fingerprint sensing device and wearable electronic device
A fingerprint sensing device and a wearable electronic device are provided. The fingerprint sensing device includes an image sensor and a processor. The image sensor is arranged below a fingerprint sensing area. The processor is coupled to the image sensor. The processor senses a finger placed above the fingerprint sensing area through the image sensor during a fingerprint sensing period to obtain a first fingerprint image. The processor continuously senses the finger placed above the fingerprint sensing area through the image sensor during a physiological information sensing period, so as to obtain a physiological characteristic signal.
The present invention relates to a gesture sensing system that uses characteristic point as a positioning starting point to generate coordinate information in space for a test object. The gesture sensing system includes: a light emitter, a light sensor, and a signal processing module. The light emitter emits a plurality of emitted lights to the characteristic point and the test object, and the emitted light is reflected to generate a plurality of reflection light to be received and converted by the light sensor receives into a plurality of sensing signal. Then, the signal processing module generates initial coordinate information and movement coordinate information based on the sensing signals. Finally, the signal processing module generates a gesture according to the initial coordinate information and the change between the movement coordinate information, and executes a preset function according to the movement trajectory of the gesture.
The invention provides a biomolecular image sensor with a plurality of microstructures repeatedly arranged on a surface of an image sensing element, and method thereof for detecting biomolecule.
The present invention provides a biomolecule image sensor in which detection molecules are deposed on a light receiving surface of an image sensing element, and method thereof for detecting biomolecule.
A bioassay device includes a main body, a biomolecular image sensor and an electrical connection portion. The main body is formed with a sensor groove. The biomolecular image sensor is disposed in the sensor groove and includes an image sensor unit. The electrical connection portion is disposed at one side of the main body and electrically connected to the biomolecular image sensor. Such that, all of the units in bioassay are able to be disposed on the main body, and the bioassay device is a kit for bioassay.
An image sensing device and a fingerprint sensing method are provided. The image sensing device is suitable for being installed in an electronic device. The image sensing device includes a light sensor and a controller. The controller is coupled to the light sensor. When the electronic device is operated in a sleep mode, the controller operates the light sensor in a light sensing mode. The controller determines whether a number of signal intensity changes of a photosensitive signal output by the light sensor exceeds a predetermined number of intensity changes within a predetermined length of time, so as to switch the operation of the light sensor in a fingerprint sensing mode.
A ranging device and a ranging method are provided. The ranging device includes a light source, an image sensor, and a processor. The light source projects a plurality of projection patterns onto a surface of an object to be measured at different times. The image sensor senses the surface of the object to be measured in synchronization with projection times of the projection patterns to obtain a plurality of sensing images respectively corresponding to the projection patterns. The processor analyzes the sensing images to determine depth information of the object to be measured. The processor performs trigonometric calculations to obtain the depth information.
An image sensor and an image sensing method are provided. The image sensor includes a photodiode, a first storage circuit, a first readout circuit, a second storage circuit, and a second readout circuit. When the image sensor is operated in a dynamic vision sensing mode, the first storage circuit stores a first dynamic vision sensing signal provided by the photodiode during a first exposure period of a first frame period, and the second storage circuit stores a second dynamic vision sensing signal provided by the photodiode during a second exposure period of the first frame period. The first readout circuit and the second readout circuit output a first readout signal and a second readout signal to a first input terminal and a second input terminal of a differential amplifier at the same time according to the first dynamic vision sensing signal and the second dynamic vision sensing signal.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
36.
Regulator-free output stage circuit for providing a stable output voltage signal
An output stage circuit including a current source circuit, a bias circuit, and an output circuit is provided. The bias circuit is coupled between the current source circuit and a ground terminal voltage. The output circuit includes a first transistor, a second transistor, a third transistor, and a load circuit. A control terminal of the first transistor is coupled to the bias circuit. The load circuit is coupled to a second terminal of the first transistor. A second terminal of the second transistor is coupled to a first terminal of the first transistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor.
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
H04N 25/587 - Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
An image sensing device and an image sensing method are provided. The image sensing device includes a pixel array and a readout circuit. The pixel array includes multiple sensing sub-pixels arranged in an array. During a first exposure period of a frame period, the sensing sub-pixels are simultaneously exposed to respectively store multiple first sensing signals in multiple storage units of the sensing sub-pixels. During multiple first readout periods of the frame period, the readout circuit sequentially reads out the first sensing signals stored in the storage units during different periods. During each of multiple dynamic sensing periods of the frame period, all or part of the sensing sub-pixels are reset and then simultaneously exposed again, and the readout circuit then simultaneously reads out multiple second sensing signals of the sensing sub-pixels.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/343 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. between still and video mode or between interlaced and non-interlaced mode
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
A61B 1/05 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
A dynamic vision sensor, including a first sensing pixel, another first sensing pixel, a storage capacitor, and another storage capacitor, is provided. The first sensing pixel includes a plurality of color light sensing sub-pixels, a first pixel circuit, an infrared light sensing sub-pixel, a second pixel circuit, and a ramp capacitor. The ramp capacitor is coupled to a ramp up signal. The second pixel circuit outputs a sensing result of the infrared light sensing sub-pixel to the storage capacitor. The another first sensing pixel includes another plurality of color light sensing sub-pixels, another first pixel circuit, another infrared light sensing sub-pixel, another second pixel circuit, and another ramp capacitor. The another ramp capacitor is coupled to a ramp down signal. The another second pixel circuit outputs a sensing result of the another infrared light sensing sub-pixel to the another storage capacitor.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
A light sensor and its calibration method are provided. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The light source emits a sensing light beam. The sensing sub-pixel includes a diode, a quenching resistor, and a time-to-digital converter. The diode has a first terminal coupled to an operation voltage. The quenching resistor is coupled between a second terminal of the diode and a ground voltage. The time-to-digital converter is coupled to the second terminal of the diode. The control circuit is coupled to the sensing sub-pixel and calibrates a sensing sensitivity of the sensing sub-pixel according to at least one of a photon detection probability, an internal gain value, and a resistance value of the quenching resistor corresponding to the diode of the sensing sub-pixel, so that the sensing sub-pixel generates a single-photon avalanche diode sensing signal only when receiving the sensing light beam.
G01S 17/14 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein a voltage or current pulse is initiated and terminated in accordance with the pulse transmission and echo reception respectively, e.g. using counters
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
G04F 10/00 - Apparatus for measuring unknown time intervals by electric means
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
Light sensor and sensing method thereof comprising a control circuit to operate diodes of plural sensing sub-pixels in a Geiger mode or in an avalanche linear mode according to intensity of ambient light
A light sensor and a sensing method thereof are provided. The light sensor includes a plurality of sensing sub-pixels and a control circuit. The sensing sub-pixels are arranged in an array to form a sensing array. The control circuit is coupled to the sensing sub-pixels. The control circuit operates a plurality of diodes of the sensing sub-pixels in a photodiode mode to sense intensity of ambient light. The control circuit operates the diodes in a Geiger mode or in an avalanche linear mode according to the intensity of the ambient light.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
G01S 17/14 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein a voltage or current pulse is initiated and terminated in accordance with the pulse transmission and echo reception respectively, e.g. using counters
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
G04F 10/00 - Apparatus for measuring unknown time intervals by electric means
A light sensor and a ranging method are provided. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The sensing sub-pixel includes a diode. The control circuit operates the diode in a Geiger mode or an avalanche linear mode. The control circuit includes a time-to-digital converter, and the time-to-digital converter includes a counting circuit. The counting circuit includes a plurality of counting units. When the time-to-digital converter receives a sensing signal provided by the sensing sub-pixel, the control circuit generates a plurality of count values according to the sensing signal through the counting units of the counting circuit, where the count values are histogram data corresponding to a distance sensing result.
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
G01S 17/14 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein a voltage or current pulse is initiated and terminated in accordance with the pulse transmission and echo reception respectively, e.g. using counters
G04F 10/00 - Apparatus for measuring unknown time intervals by electric means
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
A light sensor and a ranging method are provided. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The sensing sub-pixel includes a diode. The control circuit operates the diode in a Geiger mode or an avalanche linear mode. The control circuit includes a time-to-digital converter. The control circuit sequentially delays multiple light emission times of the light source in consecutive multiple sensing periods according to delay times during the consecutive multiple sensing periods. The control circuit sequentially monitors whether multiple digital values sequentially outputted by the time-to-digital converter corresponding to the consecutive multiple sensing periods have changed. The control circuit calculates a distance value according to the multiple digital values and a corresponding delay sequence when the control circuit determined that the multiple digital values have changed for a first time.
An image sensor for serial peripheral interface (SPI) slave circuit and a pixel array circuit therein are provided. The pixel array includes a plurality of pixel units disposed in an image sensor with the SPI slave circuit. Each pixel unit includes a photo sensor, N storages and at least one transmission circuit, wherein N is a positive integer greater than or equal to two. At least one of the N storages is coupled to the photo sensor, which are connected with each other in serial or parallel, and configured to store charges accumulated by the photo sensor at different exposures. Each transmission circuit is coupled to a corresponding storage, and is controlled by a corresponding transmission control signal to transmit the stored charge of the corresponding storage during a certain time period.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
A fingerprint sensing device including a light guide cover plate, a light source, an image sensor, and a light output element is provided. The light guide cover plate includes a flat plate portion and a light entering portion. The flat plate portion has a first surface and a second surface opposite to each other. The light entering portion is located at the second surface, and has an inclined light incident surface inclined with respect to the first surface and the second surface. The light source is configured to emit a light beam. The light beam is transmitted to the light entering portion and the flat plate portion in sequence via the inclined light incident surface. The light output element is disposed on the second surface, and guides the light beam in the flat plate portion to the image sensor.
Time of flight device and method are provided. A light-emitting module emits a first light pulse to a sensing target, and a sensing unit receives and integrates a first reflected light pulse of the sensing target. A processing circuit reads an image parameter of the sensing target through a readout circuit. The light-emitting module emits a second light pulse to the sensing target, and the sensing unit receives a second reflected light pulse of the sensing target. The processing circuit obtains a distance parameter between the sensing target and the time of flight device according to a time when the readout circuit reads the second reflected light pulse of the sensing unit. The processing circuit obtains a reflectivity of the sensing target according to the image parameter and a look-up table, and obtains a corrected distance parameter of the sensing target by correcting the distance parameter according to the reflectivity.
A time-of-flight ranging device suitable for indirect time-of-flight ranging is provided. The time-of-flight ranging device includes a light emitting module, a first sensing pixel, a second sensing pixel, a differential readout circuit, and a processing circuit. The light emitting module emits a light pulse to a sensing target, so that the sensing target reflects a reflected light pulse. The first sensing pixel generates a first sensing signal and a second sensing signal. The second sensing pixel generates a third sensing signal and a fourth sensing signal. The differential readout circuit generates first digital data according to the first sensing signal and the third sensing signal and generates second digital data according to the second sensing signal and the fourth sensing signal. The processing circuit calculates a distance between the time-of-flight ranging device and the sensing target according to the first digital data and the second digital data.
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 7/48 - Details of systems according to groups , , of systems according to group
G01S 17/14 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein a voltage or current pulse is initiated and terminated in accordance with the pulse transmission and echo reception respectively, e.g. using counters
47.
Image sensor with distance sensing function and operating method thereof
An image sensor with a distance sensing function and an operating method thereof are provided. The image sensor includes a pixel array, a cluster analog to digital converter readout circuit, and a column readout circuit. The pixel array includes a plurality of sub-pixel groups arranged in an array. The plurality of sub-pixel groups are spaced apart from each other by a circuit layout area. The cluster analog to digital converter readout circuit is disposed in the circuit layout area of the pixel array. A distance sensing pixel of each of the plurality of sub-pixel groups is configured to perform time-of-flight ranging. The column readout circuit is disposed adjacent to the pixel array. A plurality of image sensing pixels of each of plurality of the sub-pixel groups are configured to perform image sensing.
A multimedia system applying ToF ranging and its operating method are provided. The multimedia system includes a plurality of electronic devices. Each of the electronic devices includes a processing module, a ToF module, and a communication module. The ToF module is configured to perform a ToF operation. The communication module is configured to perform wireless communication. The electronic devices communicate via respective communication modules to formulate an operation protocol and respective UIDs and to perform a time slot synchronization between different electronic devices. The electronic devices sequentially perform the ToF ranging operation according to the operation protocol and the respective UIDs.
An optical identification module including a sensor and a collimator is provided. The sensor has a plurality of sensing regions. The collimator is disposed on the plurality of sensing regions, and the collimator includes a transparent substrate, a first light shielding layer, and a plurality of microlenses. The first light shielding layer includes a plurality of first openings. The plurality of microlenses are disposed on a first surface of the transparent substrate, and the plurality of microlenses correspond to the plurality of first openings respectively.
An electronic device and an image capture method are provided. The electronic device includes an image sensor, a ramp analog to digital converter, and a memory. The image sensor includes a plurality of pixel units arranged in an array, and the pixel units output a plurality of first image capturing signals and a plurality of second image capturing signals in an image capturing operation. The ramp analog to digital converter generates a plurality of most significant bit data corresponding to a plurality of pixels according to a first nonlinear ramp signal and the first image capturing signals, and generates a plurality of least significant bit data corresponding to the plurality of pixels according to a second nonlinear ramp signal and the second image capturing signals. The memory stores the most significant bit data of these pixels and the least significant bit data of these pixels together to generate frame data.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
G06F 13/20 - Handling requests for interconnection or transfer for access to input/output bus
H04N 5/232 - Devices for controlling television cameras, e.g. remote control
G06F 13/42 - Bus transfer protocol, e.g. handshakeSynchronisation
H04N 1/00 - Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmissionDetails thereof
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
F21K 9/60 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
51.
Electronic device and automatic exposure convergence method
An electronic device and an automatic exposure convergence method are provided. The electronic device includes an image sensor and a processor. The image sensor is configured to obtain a first frame. The first frame includes a plurality of sub-frame regions, and each of the sub-frame regions includes a plurality of pixel data. The plurality of pixel data are obtained based on different exposure times. The processor is coupled to the image sensor. The processor is configured to analyze the first frame to combine the pixel data having the same exposure times in the sub-frame regions into a plurality of second frames. The processor analyzes the plurality of second frame to obtain a plurality of exposure values. The processor performs an exposure convergence operation based on the plurality of exposure values.
A fingerprint sensing device and a fingerprint sensing method are provided. The fingerprint sensing device includes a transparent panel, an illumination source, a fingerprint sensor, and a processor. The illumination source is configured to sequentially provide a plurality of illuminating patterns during one exposure period to sequentially illuminate a finger object placed on the transparent panel. The fingerprint sensor includes a plurality of image sensing units. The image sensing units sense the finger object illuminated by the illuminating patterns provided by the illumination source during the one exposure period to output a plurality of pixel data. The processor is configured to receive the pixel data to generate a fingerprint image according to the pixel data. Each of the illuminating patterns includes a plurality of bright regions and a plurality of dark regions arranged in sequence, and the bright regions and the dark regions are dynamically displaced in the illuminating patterns.
An under-screen fingerprint identification system includes an image sensing element, a display element, a translucent cover, and a Bragg polarization grating. The display element is disposed on the image sensing element. The translucent cover is disposed on the display element, and the display element is located between the translucent cover and the image sensing element. The translucent cover has a first surface and a second surface opposite to each other, and the first surface is farther away from the display element than the second surface. The Bragg polarization grating is disposed on the second surface of the translucent cover.
An electronic device and a fingerprint sensing method are provided. The electronic device includes a display panel, a fingerprint sensor, and an integrated driver chip. The display panel includes a plurality of pixel units arranged in an array. The integrated driver chip integrates a display driver circuit and a fingerprint sensing circuit. When the pixel units of the display panel are in an undriven state and a finger object is in contact with a sensing area of the display panel to perform a fingerprint unlock operation, the display driver circuit drives at least a portion of the pixel units corresponding to the sensing area, so that at least a portion of the pixel units provide illumination light to the sensing area. The fingerprint sensing circuit drives the fingerprint sensor to capture a fingerprint feature image of the finger object.
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
H04N 5/232 - Devices for controlling television cameras, e.g. remote control
G06F 13/42 - Bus transfer protocol, e.g. handshakeSynchronisation
H04N 1/00 - Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmissionDetails thereof
G06F 13/20 - Handling requests for interconnection or transfer for access to input/output bus
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
H04N 5/235 - Circuitry for compensating for variation in the brightness of the object
G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H04L 29/08 - Transmission control procedure, e.g. data link level control procedure
55.
Exposure method, electronic device and master-slave system
An exposure method, an electronic device and a master-slave system are provided. The electronic device includes an image capturing circuit and a processor coupled to the image capturing circuit. The processor obtains an exposure command and a first quantity, controls the image capturing circuit to perform an exposure operation to capture an image according to the exposure command, and determines whether a quantity of the image reaches the first quantity. When the quantity of the image does not reach the first quantity, the processor performs the operation of controlling the image capturing circuit to perform the exposure operation to capture the image again. When the quantity of the image reaches the first quantity, the processor stops controlling the image capturing circuit to perform the exposure operation.
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
H04N 5/232 - Devices for controlling television cameras, e.g. remote control
G06F 13/42 - Bus transfer protocol, e.g. handshakeSynchronisation
H04N 1/00 - Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmissionDetails thereof
G06F 13/20 - Handling requests for interconnection or transfer for access to input/output bus
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
H04N 5/235 - Circuitry for compensating for variation in the brightness of the object
G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H01L 23/00 - Details of semiconductor or other solid state devices
H04L 29/08 - Transmission control procedure, e.g. data link level control procedure
56.
Master-slave system, command execution method and data access method with use of serial peripheral interface (SPI)
A master-slave system, a command execution method, and a data access method are provided. The master-slave system includes a master device and a slave device. The master device provides a first command and a clock signal to the slave device. The slave device executes a first operation corresponding to the first command according to the first command and the clock signal. When the first operation corresponding to the first command is completed, the slave device generates a response signal according to the clock signal to notify the master device an execution result of the first operation corresponding to the first command.
An image data transmission system and an image data transmission method are provided. The image data transmission system includes an image sensing device, a master device, and a serial transmission bus. The serial transmission bus electrically connects the image sensing device and the master device. The master device transmits a read command to the image sensing device through the serial transmission bus, and the image sensing device transmits a first data sequence to the master device through the serial transmission bus in response to the read command.
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
H04N 5/232 - Devices for controlling television cameras, e.g. remote control
G06F 13/42 - Bus transfer protocol, e.g. handshakeSynchronisation
H04N 1/00 - Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmissionDetails thereof
G06F 13/20 - Handling requests for interconnection or transfer for access to input/output bus
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
H04N 5/235 - Circuitry for compensating for variation in the brightness of the object
G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H04L 29/08 - Transmission control procedure, e.g. data link level control procedure
A visible light communication sensor is provided. The visible light communication sensor includes a sensing module, an image data readout circuit, and a visible light communication data readout circuit. The sensing module includes a plurality of pixel units arranged in an array. When the sensing module performs an image sensing operation, a first portion of the pixel units performs an image sensing operation, and the image data readout circuit is idle. When the sensing module performs a visible light communication operation, a second portion of the plurality of pixel units receives a visible light communication signal, so that the visible light communication data readout circuit outputs the visible light communication data, and the image data readout circuit performs an analog-to-digital conversion on a plurality of image sensing signals outputted by the first portion of the plurality of pixel units performed in the image sensing operation to output image sensing data.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H01L 31/112 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor
A visible light communication sensor and visible light communication method are provided. The visible light communication sensor includes a comparator, a sensing unit, and a first ramp signal generator. The comparator includes a first input terminal, a second input terminal, and an output terminal. The sensing unit is coupled to the first input terminal of the comparator. The sensing unit is configured to sense a visible light communication signal to output a sensing signal to the first input terminal of the comparator. The first ramp signal generator is coupled to the second input terminal of the comparator and is configured to output the first ramp signal to the second input terminal of the comparator. The comparator outputs a comparison result signal via the output terminal according to the voltage values of the first input terminal and the second input terminal.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H01L 31/112 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor
A light-emitting apparatus including a light source, a light-diverging element, a conductive structure, and a drive control module is provided. The light source is used to emit a light beam. The light-diverging element is disposed on a transmission path of the light beam, wherein after the light beam passes through the light-diverging element, a plurality of light beams separated from each other are produced. The conductive structure is disposed on a first surface of the light-diverging element. The drive control module is used to drive the light source and is electrically connected to the light source and the conductive structure.
An image sensing system and a multi-function image sensor thereof are provided. The multi-function image sensor includes a pixel array circuit and a readout circuit. The pixel array circuit includes a plurality of pixel units. Each of the pixel units is controlled by a first control signal group in a first mode to perform a time-of-flight sensing operation and sequentially generates a plurality of first output voltages. Each of the pixel units is controlled by a second control signal group in a second mode to perform a structured light sensing operation and sequentially generates a plurality of second output voltages. The readout circuit respectively obtains a plurality of first digital information corresponding to the time-of-flight sensing operation according to the first output voltages in the first mode. The readout circuit respectively obtains a plurality of second digital information corresponding to the structured light sensing operation according to the second output voltages in the second mode.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
H04N 5/235 - Circuitry for compensating for variation in the brightness of the object
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H04N 5/341 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled
An integrated circuit having an optical structure is provided. The integrated circuit includes a semiconductor substrate and a plurality of light guiding pattern layers. The light guiding pattern layers are located above the semiconductor substrate, and each of the light guiding pattern layers has a plurality of openings and a plurality of side wall portions corresponding to the openings. Each of the side wall portions surrounds the corresponding opening. A projection of one of the openings of one of the light guiding pattern layers on the semiconductor substrate at least partially overlaps a projection of one of the openings of the adjacent light guiding pattern layer on the semiconductor substrate, so as to form at least one light via hole and allow external light to be transferred to the semiconductor substrate through the light guiding pattern layers.
patents